CN104743500B - A kind of MEMS and preparation method thereof - Google Patents
A kind of MEMS and preparation method thereof Download PDFInfo
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- CN104743500B CN104743500B CN201310743095.1A CN201310743095A CN104743500B CN 104743500 B CN104743500 B CN 104743500B CN 201310743095 A CN201310743095 A CN 201310743095A CN 104743500 B CN104743500 B CN 104743500B
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Abstract
The present invention relates to a kind of MEMS and preparation method thereof, described method includes: provide substrate, described substrate is formed cmos device, pressure transducer bottom electrode and the gyroscope bottom electrode being isolated from each other, described gyroscope bottom electrode is also formed with gyroscope sacrificial material layer；The lamination of first conductive material layer the-the second sacrificial material layer the-the second conductive material layer it is formed at pressure transducer bottom electrode；Pattern the second conductive material layer and form the second opening, expose described second sacrificial material layer, then remove described second sacrificial material layer, to form pressure sensor cavities；Form MEMS substrate, pattern described MEMS substrate and described first interlayer dielectric layer, to form the 3rd opening, expose described gyroscope sacrificial material layer and the second conductive material layer respectively；Remove described gyroscope sacrificial material layer, to form gyroscope arrangement；It is formed over cover layer, to be formed over the space of closing at described gyroscope arrangement at described gyroscope arrangement.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of MEMS and preparation method thereof.
Background technology
Development along with semiconductor technology, on the market of sensor (motionsensor) series products, smart mobile phone, integrated CMOS and microelectromechanical systems (MEMS) device are increasingly becoming most main flow, state-of-the-art technology, and the renewal along with technology, the developing direction of this kind of transmission sensors product is the size that scale is less, high-quality electric property and less loss.
Microelectromechanical systems (MEMS) is in volume, power consumption, weight and has fairly obvious advantage in price, so far multiple different sensor is had been developed over, for instance pressure transducer, gyroscope (Gyro), acceleration transducer, inertial sensor and other sensor.
Development along with technology, the integrated level of various integrated circuits improves constantly, dimensional requirement for device is also more and more less, such as in smart mobile phone, smart mobile phone function is more and more abundanter, and required sensor also gets more and more, and PCB surface is amassed limited, too much sensor chip necessarily takies a lot of area, causes that circuit board size becomes big, and corresponding mobile phone also becomes heavier.
The smart mobile phone of prior art usually contains multiple sensor, it is such as the sensors such as the sensor containing gyroscope and barometer, described sensor containing gyroscope and air pressure flowmeter sensor two chips are mounted on pcb board respectively, individually arrange, the structure of the sensor containing gyroscope is as shown in Figure 1a as described in Figure, the structure of described pressure transducer is as shown in Figure 1 b, but need various function to be highly integrateable in less region in actual applications, obtain the product of complex function, improve the performance (capability) of electronic product, reduce price and convenient consumer uses, but two sensors can not integrate in prior art, such two chips need to encapsulate respectively, and account for pcb board area, mobile phone is also become large-sized and becomes heavier.
Prior art makes a chips but without two kinds of sensors or two or more sensors, cause packaging cost significantly high, and chip area is also very big, can not meet now for little, clever, skilful demand, it is thus desirable to the preparation method of sensor in device is improved further, in order to eliminate the problems referred to above.
Summary of the invention
Introducing the concept of a series of reduced form in Summary, this will further describe in detailed description of the invention part.The Summary of the present invention is not meant to the key feature and the essential features that attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The present invention is in order to overcome the problem of presently, there are, it is provided that the preparation method of a kind of MEMS, including:
Substrate is provided, described substrate is formed cmos device, pressure transducer bottom electrode and the gyroscope bottom electrode being isolated from each other, described gyroscope bottom electrode is also formed with gyroscope sacrificial material layer；
Deposit the first interlayer dielectric layer on the substrate and pattern, forming the first opening, to expose described pressure transducer bottom electrode；
The lamination of first conductive material layer the-the second sacrificial material layer the-the second conductive material layer is formed at described first overthe openings；
Continue deposition the first interlayer dielectric layer and be planarized to described second conductive material layer；
Pattern described second conductive material layer and form the second opening, expose described second sacrificial material layer, then remove described second sacrificial material layer, to form pressure sensor cavities；
Described first interlayer dielectric layer forms the first interconnection structure, connects to be formed with described gyroscope bottom electrode；
Described first interlayer dielectric layer is formed MEMS substrate, and in described MEMS substrate, forms the second interconnection structure, to connect with described first interconnection structure；
Pattern described MEMS substrate and described first interlayer dielectric layer, to form the 3rd opening, expose described gyroscope sacrificial material layer and the second conductive material layer respectively；
Remove described gyroscope sacrificial material layer, to form gyroscope arrangement；
It is formed over cover layer, to be formed over the space of closing at described gyroscope arrangement at described gyroscope arrangement.
As preferably, the method forming described lamination is:
Depositing first conductive material layer, to fill described first opening, and and described pressure transducer bottom electrode formation connection；
Described first conductive material layer deposits the second sacrificial material layer, then depositing second conductive material layer in described second sacrificial material layer；
Then described first conductive material layer, the second sacrificial material layer and described second conductive material layer are patterned, to be formed over described lamination at described pressure transducer bottom electrode.
As preferably, described gyroscope bottom electrode includes be isolated from each other the first electrode arranged and the second electrode, described first electrode and be respectively provided with the gyroscope sacrificial material layer being isolated from each other above described second electrode.
As preferably, while described first conductive material layer deposits the second sacrificial material layer, also depositing the second sacrificial material layer in described gyroscope sacrificial material layer.
As preferably, described first interconnection structure is silicon through hole.
As preferably, between described MEMS substrate and described first interlayer dielectric layer, the method by being bonded is combined as a whole.
As preferably, between described cover layer and described gyroscope arrangement, the method by being bonded is combined as a whole.
As preferably, after forming described second interconnection structure, it is additionally included in formation metal connecting layer structure on described second interconnection structure, to connect described cover layer.
As preferably, selecting ashing method to remove described gyroscope sacrificial material layer and described second sacrificial material layer.
As preferably, the method forming the second interconnection structure in described MEMS substrate is:
Select MEMS substrate described in deep reaction ion etching, to form the 4th opening；
The sidewall of described 4th opening is formed sealing coat；
Then in described 4th opening, conductive material is deposited, to form the second interconnection structure.
As preferably, described gyroscope sacrificial material layer selects unformed silicon materials；
Described second sacrificial material layer selects unformed silicon materials；
Described first interlayer dielectric layer selects SiO2；
Described first conductive material layer selects SiGe；
Described second conductive material layer selects SiGe；
Described MEMS substrate selects polysilicon；
Described second interconnection structure selects polysilicon, Cu or W.
As preferably, the thickness of described gyroscope sacrificial material layer is 17K angstrom；
The thickness of described second sacrificial material layer is 3K angstrom；
The thickness of described first conductive material layer is 5K angstrom；
The thickness of described second conductive material layer is 4K angstrom；
The thickness of described MEMS substrate is 20-50um；
The thickness of described cover layer is 200um.
Present invention also offers MEMS prepared by a kind of above-mentioned method.
The present invention is to solve problems of the prior art, CMOS technology and MEMS are integrated into CMEMS technique, in the process described gyroscope and pressure transducer are merged in a CMOSMEMS technical process, flow can be obtained by having acceleration transducer and capacitance pressure transducer simultaneously, significantly reduce cost, and chip integration can bring diminishing of board area.
The advantage of the method for the invention is in that:
(1) more device is integrated in a less region, can more efficiently improve performance and the competitiveness of product, it is thus achieved that better market prospect.
(2) gyroscope and pressure transducer are integrated in a CMOSMEMS technical process, it is possible to reduce the cost of semiconductor device further.
(3) concordance (consistency) of semiconductor device can be improved further.
Accompanying drawing explanation
The drawings below of the present invention is used for understanding the present invention in this as the part of the present invention.Shown in the drawings of embodiments of the invention and description thereof, it is used for explaining assembly of the invention and principle.In the accompanying drawings,
Fig. 1 a-1b is the structural representation of gyroscope and pressure transducer in prior art；
Fig. 2 a-2g is the preparation process schematic diagram of MEMS in the embodiment of the invention；
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.It is, however, obvious to a person skilled in the art that the present invention can be carried out without these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by proposing detailed description in following description, with the preparation method that MEMS of the present invention is described.Obviously, the execution of the present invention is not limited to the specific details that the technical staff of semiconductor applications has the knack of.Presently preferred embodiments of the present invention is described in detail as follows, but except these detailed descriptions, the present invention can also have other embodiments.
Should give it is noted that term used herein above is merely to describe specific embodiment, and be not intended to the restricted root exemplary embodiment according to the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to include plural form.In addition, it is to be further understood that, when using term " comprising " and/or " including " in this manual, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not preclude the presence or addition of other features one or more, entirety, step, operation, element, assembly and/or their combination.
Now, the exemplary embodiment according to the present invention it is more fully described with reference to the accompanying drawings.But, these exemplary embodiments can multiple different form be implemented, and should not be construed to be limited solely to the embodiments set forth herein.It should be appreciated that these embodiments are provided so that disclosure of the invention thoroughly and complete, and the design of these exemplary embodiments is fully conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, exaggerate the thickness in layer and region, and use identical accompanying drawing labelling to represent identical element, thus description of them will be omitted.
In the present invention in order to solve acceleration and barometer two chips are mounted on the problem that packaging cost is high and pcb board area is big brought on pcb board by prior art respectively, the technological process of two kinds of chips is combined, flow can be obtained by having acceleration transducer and capacitance pressure transducer simultaneously, significantly reduces cost.And chip integration can bring diminishing of board area.
Below in conjunction with accompanying drawing 2a-2f to the one of the present invention specifically embodiment be further described.
First, perform step 201 and first substrate 201 is provided, described substrate 201 is formed with cmos device.
Specifically, with reference to Fig. 2 a, various active device is formed on the semiconductor substrate, for instance forming cmos device and other active device and/or passive device etc. on the semiconductor substrate, described active device is not limited to a certain kind.
Wherein said Semiconductor substrate can be at least one in the following material being previously mentioned: stacking SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. on stacking silicon (SSOI), insulator on silicon, silicon-on-insulator (SOI), insulator.
Perform step 202, described substrate 201 forms the substrate metal layer of patterning, to form pressure transducer bottom electrode 20 and gyroscope bottom electrode, including the first spaced electrode 21 and the second electrode 22.
Specifically, forming described substrate metal layer in described substrate, to form bottom electrode, the method forming substrate metal layer on the substrate is: form dielectric layer in Semiconductor substrate, pattern dielectric layer forms groove, and filler metal material forms described electrode in the trench.In a detailed description of the invention of the present invention, in described substrate 201, such as form the photoresist layer (not shown) of patterning, described photoresist layer is formed fluted pattern, then with described photoresist layer for mask patterning described dielectric layer, to form multiple groove in described dielectric layer.
The centrally located bottom electrode partly as pressure transducer, be positioned at that described pressure transducer bottom electrode side clicks as the connection terminal of top electrodes of described pressure transducer that will be formed after connecting, for the various devices of described MEMS and bottom are formed electrical connection.
Wherein said first electrode 21 and the second electrode 22 are collectively forming the battery lead plate in acceleration transducer in conjunction with the conductive material layer formed in subsequent process, are used for forming capacitor.
Wherein, described metal material can select copper, gold, silver, tungsten and other similar materials, preferred metallic copper is as conductive material, the method that can pass through physical vapour deposition (PVD) (PVD) method or Cu electroplating (ECP) is filled described groove and covers described oxide skin(coating), it is preferable that the method for Cu electroplating (ECP) forms described metal material.
Wherein said bottom metal layers includes the first electrode 21 and the second electrode 22 and pressure transducer bottom electrode 20, it is separated by between described first electrode 21 and the second electrode 22 and pressure transducer bottom electrode 20 setting, but can be by a step to complete, it is achieved the compatibility of said two processing step.
Then perform step 203, substrate 201 and described substrate metal layer are formed deposition the first sacrificial material layer and patterns, to form gyroscope sacrificial material layer 203.
Specifically, with reference to Fig. 2 a, described first sacrificial material layer can be photoresist, SiO2, the silicon carbide layer NDC (NitrogendoppedSiliconCarbite) of N doping, SiN layer or amorphous silicon (amorphism-Silicon, A-S), in a detailed description of the invention of the present invention, preferred amorphous silicon (amorphism-Silicon, A-S) is as sacrificial material layer.Wherein, the thickness of described first sacrificial material layer is 17K angstrom.
After depositing described first sacrificial material layer, perform planarisation step, flattening method conventional in field of semiconductor manufacture can be used in this step to realize the planarization on surface.The limiting examples of this flattening method includes mechanical planarization method and chemically mechanical polishing flattening method.Chemically mechanical polishing flattening method is more often used.
Then described sacrificial material layer is patterned, so that substrate 201 between described first electrode 21 and the second electrode 22 to be formed gyroscope sacrificial material layer 203.
Then depositing the first interlayer dielectric layer 202 in described substrate and described gyroscope sacrificial material layer 203, wherein, described first interlayer dielectric layer 202 can be selected and can use such as SiO2, fluorocarbon (CF), carbon doped silicon oxide (SiOC) or carbonitride of silicium (SiCN) etc..Or, it is possible to use on fluorocarbon (CF), define the film etc. of SiCN thin film.Fluorocarbon is with fluorine (F) and carbon (C) for main component.
Described in a detailed description of the invention of the present invention, the first interlayer dielectric layer 202 is preferably SiO2After having deposited described first interlayer dielectric layer 202, perform planarisation step, planarize described first interlayer dielectric layer 202 to described gyroscope sacrificial material layer 203, make described first interlayer dielectric layer 202 and described gyroscope sacrificial material layer 203 have equal height.
Then pattern described first interlayer dielectric layer 202, be formed over the first opening with pressure transducer bottom electrode 20 described in described first interlayer dielectric layer 202, to expose described pressure transducer bottom electrode 20.
Perform step 204, deposit conductive material in described first opening and on described first interlayer dielectric layer 202 and pattern, to form electrical connection with described pressure transducer bottom electrode 20.
Specifically, depositing first conductive material layer 204 on described first opening and described first interlayer dielectric layer 202 in this step, then the conductive material of both sides above described pressure transducer bottom electrode 20 is removed in etching, to form " T " contact plug, and described pressure transducer bottom electrode 20 forms electrical connection.
As preferably, described conductive material can select the first conductive material layer 204 commonly used in the art, is specifically preferably SiGe in embodiment in the one of the present invention, and the thickness of wherein said first conductive material layer 204 is 5K angstrom, but is not limited to this numerical value.
Perform step 205, described first conductive material layer 204 deposits the second sacrificial material layer 205, then depositing first conductive material layer 204 again in described second sacrificial material layer 205, to be formed over the structure of conductive material-expendable material-conductive material at described pressure transducer bottom electrode 20, for forming pressure transducer electric capacity.
Specifically, as shown in Figure 2 b, depositing the second sacrificial material layer 205 on described first conductive material layer 204 and described gyroscope sacrificial material layer 203, wherein said second sacrificial material layer 205 can select the material identical with described first sacrificial material layer.The thickness of described second sacrificial material layer is 4K angstrom.
At specifically in embodiment of the present invention, described first conductive material layer 204 and described gyroscope sacrificial material layer 203 and described first interlayer dielectric layer 202 deposit the second sacrificial material layer 205, then described second sacrificial material layer 205 is patterned, only retain and be positioned in described first conductive material layer 204 and described gyroscope sacrificial material layer 203, remove described second sacrificial material layer 205 on described first interlayer dielectric layer 202.
It is then followed by the second sacrificial material layer 205 on described first conductive material layer 204 depositing second conductive material layer 206, as preferably, the material that described second conductive material layer 206 selects and the first conductive material layer 204 is same.
As further preferably, the thickness of described second conductive material layer 206 is 4K angstrom.
Performing step 206, continue deposition the first interlayer dielectric layer 202, be then planarized to described second conductive material layer 206, wherein, described first interlayer dielectric layer 202 the selection of material and deposition process are referred to the operation in step 203.
Perform step 207, pattern described second conductive material layer 206, to form the second opening, expose the second sacrificial material layer 205 on described first conductive material layer 204, then described second sacrificial material layer 205 is removed, to form cavity between described first conductive material layer 204 and described second conductive material layer 206.Specifically, in this step, the second conductive material layer 206 above described second sacrificial material layer 205 is first patterned, to form the second opening.
Dry etching conductive material layer can be selected in this step, described dry etching can be selected CF4、CHF3, additionally plus N2、CO2、O2In one as etching atmosphere, wherein gas flow is CF410-200sccm, CHF310-200sccm, N2Or CO2Or O210-400sccm, described etching pressure is 30-150mTorr, and etching period is 5-120s, it is preferred to 5-60s, more preferably 5-30s.
Then the second sacrificial material layer 205 on described first conductive material layer 204 is removed, to form pressure sensor cavities.
Specifically, as shown in Figure 2 c, in the present invention in order to will not described first conductive material layer 204 be impacted while removing described sacrificial material layer, the method selecting etching selectivity bigger is etched.
The specific embodiment of the invention can be selected dry etching, reactive ion etching (RIE), ion beam milling, plasma etching and ashing method.As preferably, specifically embodiment select ashing method to remove described second sacrificial material layer 205 in the one of the present invention.
It is formed over pressure sensor cavities at described first conductive material layer 204 after removing the second sacrificial material layer 205, wherein, described first conductive material layer 204 is as a battery lead plate of electric capacity, described second conductive material layer 206 is as the another one battery lead plate of electric capacity, the middle cavity formed is as the dielectric medium of described electric capacity, to form sensor capacitor.
Perform step 208, above described first electrode 21 and the second electrode 22, described first interlayer dielectric layer 202 forms the first interconnection structure 205.
Specifically, wherein, above described first electrode 21 and the second electrode 22, described first interlayer dielectric layer 202 forms the first interconnection structure 205 to form connection.As preferably, described first interconnection structure 205 is preferably silicon through hole.
At specifically in embodiment of the present invention, first described first interlayer dielectric layer 202 is patterned to form opening in described first interlayer dielectric layer 202, expose described first electrode 21 and the second electrode 22, and the bottom electrode outside described first electrode 21, then at the sidewall of described opening, depositing isolation material layer on bottom and described first interlayer dielectric layer 202, as preferably, wherein said spacer material layer can select the material identical with described first interlayer dielectric layer 202, then conductive material is selected to fill described opening, to form silicon through hole, formed with described first electrode 21 and the second electrode 22 and connect.
Perform step 209, described first interlayer dielectric layer 202 is formed MEMS substrate 207.
Specifically, as shown in Figure 2 d, the forming method of described MEMS substrate 207 and conventional method are different, and non-immediate on described first interlayer dielectric layer 202 deposit, but first prepare MEMS substrate 207, then described MEMS substrate 207 and described first interlayer dielectric layer 202 bonding are integrated.
Further, described MEMS substrate 207 is silicon or polysilicon, and as preferably, the thickness of described MEMS substrate 207 is 20-50um.The deposition process of MEMS substrate 207 can be the one in low-pressure chemical vapor deposition (LPCVD), laser ablation deposition (LAD) and the epitaxial growth that chemical vapour deposition (CVD) (CVD) method, physical vapour deposition (PVD) (PVD) method or ald (ALD) method etc. are formed in the present invention.
Being bonded together by the method for eutectic bond or thermal bonding between described MEMS substrate 207 and described first interlayer dielectric layer 202, described first interlayer dielectric layer 202 is preferably SiO in this embodiment2, in this step be preferably thermal bonding method, use H in this step respectively2SO4+H2O2, RCA2, RCA1 clean, cleaning process must strictly observe working specification, including to solution concentration proportioning, heat time heating time, flushing period control etc., to strengthen the hydrophilic of two bonding faces.Additionally, can silicon/silicon bonding realize additionally depending on the waviness (also referred to as flatness) on Si sheet surface, generally need at below 5A.When ensureing two above condition, the annealing temperature of 180 DEG C is it is ensured that bigger bond strength.
Perform step 210, described MEMS substrate 207 is formed the second interconnection structure and connects to be formed with described first interconnection structure 205.
Specifically, first described MEMS substrate 207 is patterned to form the 3rd opening in described MEMS substrate 207, expose described first interconnection structure, then depositing isolation material layer on the sidewall of described 3rd opening and described MEMS substrate 207, as preferably, wherein said spacer material layer can select the material identical with described first interlayer dielectric layer 202, then selects conductive material to fill described 3rd opening, to form the second interconnection structure, and the first interconnection structure is formed and connects.
Perform step 211, be formed over metal connecting layer 208 at described second interconnection structure.
Specifically, as shown in Figure 2 e, it is formed over metal connecting layer at described second interconnection structure, concrete grammar for deposit the second interlayer dielectric layer on described MEMS substrate 207, then pattern, expose described second interconnection structure, be subsequently filled metal, contact to be formed with described second interconnection structure, be certainly not limited to this example.
Perform step 212, pattern described MEMS substrate 207 and described first interlayer dielectric layer 202, to expose described gyroscope sacrificial material layer 203 and described second conductive material layer 206.
nullSpecifically，As shown in figure 2f，Deep reaction ion etching (DRIE) method is selected to etch described MEMS substrate 207 and described first interlayer dielectric layer 202，Specifically，First on described MEMS substrate 207, form organic distribution layer (Organicdistributionlayer,ODL)，Siliceous bottom antireflective coating (Si-BARC)，The photoresist layer of deposit patterned is gone up at described siliceous bottom antireflective coating (Si-BARC)，Or the photoresist layer patterned only is formed at described MEMS substrate 207，Pattern definition on described photoresist to form the figure of the 4th opening，Then with described photoresist layer for mask layer or with the described organic distribution layer of described etching、Bottom antireflective coating、The lamination that photoresist layer is formed is that mask etch MEMS substrate 207 forms the 4th opening.
Described opening is positioned at gyroscope sacrificial material layer 203 and the top of described second conductive material layer 206, to expose described gyroscope sacrificial material layer 203 and described second conductive material layer 206, by controlling this etching process, making described etch stop in gyroscope sacrificial material layer 203 and described second conductive material layer 206, wherein said number of openings can be multiple.
In this embodiment, above described second conductive material layer 206, both sides form two the 4th mutually isolated openings, the critical size of described 4th opening is by the restriction of described DRIE system, the ratio of width to height of described 4th opening is 1:15, therefore, when described MEMS substrate 105 thickness is 50um, the critical size of described opening is about 3.3um.As preferably, the angle with vertical section, described opening sidewalls and bottom surface of described opening is 89 °-91 °.
Described deep reaction ion etching (DRIE) step is selected gas hexa-fluoride (SF6) as process gas, apply radio-frequency power supply, hexa-fluoride reaction air inlet is made to form high ionization, controlling operating pressure in described etching step is 20mTorr-8Torr, frequency power is 600W, 13.5MHz, and Dc bias can continuous control in-500V 1000V, ensure the needs of anisotropic etching, select deep reaction ion etching (DRIE) that very high etching photoresistance can be kept to select ratio.Described deep reaction ion etching (DRIE) system can select the equipment that ability is conventional, it is not limited to a certain model.
Perform step 213, remove described gyroscope sacrificial material layer 203, to form gyroscope arrangement.
Specifically, such as Fig. 2 f, in the present invention in order to described bottom electrode be impacted while removing described gyroscope sacrificial material layer 203, the method selecting etching selectivity bigger is etched, and ashing method can be selected in the specific embodiment of the invention to remove described gyroscope sacrificial material layer 203.
It is formed over cavity at described first electrode 21 and the second electrode 22 after removing described gyroscope sacrificial material layer 203, and it being formed over cantilever beam and transportable mass at described first electrode 21 and the second electrode 22, described cantilever beam is connected in fulcrum with described MEMS substrate 207.
Perform step 214, be formed over the cover layer 209 of isolation at described gyroscope arrangement, between described cover layer 209 and described sensor construction, form the space of closing.
Specifically, described cover layer 209 can be silicon or polysilicon, the deposition process of described cover layer 209 can select the one in low-pressure chemical vapor deposition (LPCVD), laser ablation deposition (LAD) and selective epitaxy growth (SEG) that chemical vapour deposition (CVD) (CVD) method, physical vapour deposition (PVD) (PVD) method or ald (ALD) method etc. are formed, as preferably, selecting physical vapour deposition (PVD) (PVD) method in the present invention.
Wherein, described cover layer 209 and described cavity, described MEMS substrate 207 are also not directly contacted with, and have certain distance and space, form the space of closing between described cover layer and described sensor construction between described cover layer 209 and described cavity.The two ends of described cover layer 209 connect described metal connecting layer 209, to form connection.
As preferably, the forming method of described cover layer 209 is, first deposition covering layer material layer, then patterns, and forms groove at the middle part of described covering layer material layer, forms column structure in groove both sides, and forms extraction electrode on described column structure.
Then being combined in the contact hole to described second interlayer dielectric layer by described cover layer, described associated methods can select the method for eutectic bond.
The present invention is to solve problems of the prior art, CMOS technology and MEMS are integrated into CMEMS technique, in the process described gyroscope and pressure transducer are merged in a CMOSMEMS technical process, flow can be obtained by having acceleration transducer and capacitance pressure transducer simultaneously, significantly reduce cost, and chip integration can bring diminishing of board area.
The advantage of the method for the invention is in that:
(1) more device is integrated in a less region, can more efficiently improve performance and the competitiveness of product, it is thus achieved that better market prospect.
(2) gyroscope and pressure transducer are integrated in a CMOSMEMS technical process, it is possible to reduce the cost of semiconductor device further.
(3) concordance (consistency) of semiconductor device can be improved further.
Fig. 3 is the preparation technology flow chart of single chip micro-computer electricity system described in the embodiment of the invention, specifically includes following steps:
Step 201 provides substrate, is formed with cmos device, pressure transducer bottom electrode and the gyroscope bottom electrode being isolated from each other, described gyroscope bottom electrode is also formed with gyroscope sacrificial material layer in described substrate；
Step 202 deposits the first interlayer dielectric layer on the substrate and patterns, and forms the first opening, to expose described pressure transducer bottom electrode；
Step 203 forms the lamination of first conductive material layer the-the second sacrificial material layer the-the second conductive material layer at described first overthe openings；
Step 204 continues deposition the first interlayer dielectric layer and is planarized to described second conductive material layer；
Step 205 patterns described second conductive material layer and forms the second opening, exposes described second sacrificial material layer, then removes described second sacrificial material layer, to form pressure sensor cavities；
Step 206 forms the first interconnection structure in described first interlayer dielectric layer, connects to be formed with described gyroscope bottom electrode；
Step 207 forms MEMS substrate on described first interlayer dielectric layer, and forms the second interconnection structure in described MEMS substrate, to connect with described first interconnection structure；
Step 208 patterns described MEMS substrate and described first interlayer dielectric layer, to form the 3rd opening, exposes described gyroscope sacrificial material layer and the second conductive material layer respectively；
Step 209 removes described gyroscope sacrificial material layer, to form gyroscope arrangement；
Step 210 is formed over cover layer at described gyroscope arrangement, to be formed over the space of closing at described gyroscope arrangement.
The present invention is illustrated already by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to citing and descriptive purpose, and is not intended to limit the invention in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that and the invention is not limited in above-described embodiment, more kinds of variants and modifications can also be made according to the teachings of the present invention, within these variants and modifications all fall within present invention scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (13)
1. a preparation method for MEMS, including:
Substrate is provided, described substrate is formed cmos device, pressure transducer bottom electrode and the gyroscope bottom electrode being isolated from each other, described gyroscope bottom electrode is also formed with gyroscope sacrificial material layer；
Deposit the first interlayer dielectric layer on the substrate and pattern, forming the first opening, to expose described pressure transducer bottom electrode；
The lamination of first conductive material layer the-the second sacrificial material layer the-the second conductive material layer is formed at described first overthe openings；
Continue deposition the first interlayer dielectric layer and be planarized to described second conductive material layer；
Pattern described second conductive material layer and form the second opening, expose described second sacrificial material layer, then remove described second sacrificial material layer, to form pressure sensor cavities；
Described first interlayer dielectric layer forms the first interconnection structure, connects to be formed with described gyroscope bottom electrode；
Described first interlayer dielectric layer is formed MEMS substrate, and in described MEMS substrate, forms the second interconnection structure, to connect with described first interconnection structure；
Pattern described MEMS substrate and described first interlayer dielectric layer, to form the 3rd opening, expose described gyroscope sacrificial material layer and the second conductive material layer respectively；
Remove described gyroscope sacrificial material layer, to form gyroscope arrangement；
It is formed over cover layer, to be formed over the space of closing at described gyroscope arrangement at described gyroscope arrangement.
2. method according to claim 1, it is characterised in that the method forming described lamination is:
Depositing first conductive material layer, to fill described first opening, and and described pressure transducer bottom electrode formation connection；
Described first conductive material layer deposits the second sacrificial material layer, then depositing second conductive material layer in described second sacrificial material layer；
Then described first conductive material layer, the second sacrificial material layer and described second conductive material layer are patterned, to be formed over described lamination at described pressure transducer bottom electrode.
3. method according to claim 1, it is characterised in that described gyroscope bottom electrode includes being isolated from each other the first electrode and the second electrode that arrange, described first electrode and be respectively provided with the gyroscope sacrificial material layer being isolated from each other above described second electrode.
4. method according to claim 1, it is characterised in that while depositing the second sacrificial material layer on described first conductive material layer, also deposits the second sacrificial material layer in described gyroscope sacrificial material layer.
5. method according to claim 1, it is characterised in that described first interconnection structure is silicon through hole.
6. method according to claim 1, it is characterised in that between described MEMS substrate and described first interlayer dielectric layer, the method by being bonded is combined as a whole.
7. method according to claim 1, it is characterised in that between described cover layer and described gyroscope arrangement, the method by being bonded is combined as a whole.
8. method according to claim 1, it is characterised in that after forming described second interconnection structure, is additionally included in formation metal connecting layer structure on described second interconnection structure, to connect described cover layer.
9. method according to claim 1, it is characterised in that select ashing method to remove described gyroscope sacrificial material layer and described second sacrificial material layer.
10. method according to claim 1, it is characterised in that the method forming the second interconnection structure in described MEMS substrate is:
Select MEMS substrate described in deep reaction ion etching, to form the 4th opening；
The sidewall of described 4th opening is formed sealing coat；
Then in described 4th opening, conductive material is deposited, to form the second interconnection structure.
11. method according to claim 1, it is characterised in that described gyroscope sacrificial material layer selects unformed silicon materials；
Described second sacrificial material layer selects unformed silicon materials；
Described first interlayer dielectric layer selects SiO2；
Described first conductive material layer selects SiGe；
Described second conductive material layer selects SiGe；
Described MEMS substrate selects polysilicon；
Described second interconnection structure selects polysilicon, Cu or W.
12. method according to claim 1, it is characterised in that the thickness of described gyroscope sacrificial material layer is 17K angstrom；
The thickness of described second sacrificial material layer is 3K angstrom；
The thickness of described first conductive material layer is 5K angstrom；
The thickness of described second conductive material layer is 4K angstrom；
The thickness of described MEMS substrate is 20-50um；
The thickness of described cover layer is 200um.
13. the MEMS prepared according to the method one of claim 1-12 Suo Shu.
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