CN104655333B - A kind of pressure transducer and preparation method thereof - Google Patents
A kind of pressure transducer and preparation method thereof Download PDFInfo
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- CN104655333B CN104655333B CN201310593892.6A CN201310593892A CN104655333B CN 104655333 B CN104655333 B CN 104655333B CN 201310593892 A CN201310593892 A CN 201310593892A CN 104655333 B CN104655333 B CN 104655333B
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Abstract
The present invention relates to a kind of pressure transducer and preparation method thereof, including Semiconductor substrate is provided, is formed with interlayer dielectric layer and pressure sensing membrane in the Semiconductor substrate；The first sacrificial material layer is deposited on the interlayer dielectric layer；First sacrificial material layer is patterned, and movable plate electrode is formed to form movable plate electrode groove；The movable plate electrode is patterned, so that multiple first grooves are formed in the movable plate electrode；The second sacrificial material layer is deposited in first sacrificial material layer and the movable plate electrode, wherein the second sacrificial material layer in first groove forms the second groove；Fixed plate is deposited in second sacrificial material layer and the interlayer dielectric layer for exposing, and fills second groove；Opening is formed on the fixed plate, to expose second sacrificial material layer；Second sacrificial material layer and the first sacrificial material layer are removed, to form sensor cavities；Form the fixed plate of closing.Pressure transducer of the present invention has more preferable sensitivity.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of pressure transducer and preparation method thereof.
Background technology
With the continuous development of semiconductor technology, on the market of motion sensor (motion sensor) class product, intelligence
Energy mobile phone, integrated CMOS and MEMS (MEMS) device are increasingly becoming most main flow, state-of-the-art technology, and with technology
Renewal, the developing direction of this kind of transmission sensors product is the less size of scale, high-quality electric property and lower
Loss.
Wherein, MEMS pressure sensor is widely used in automotive electronics：Such as TPMS, engine oil pressure sensor, vapour
Car brake system air pressure probe, air intake manifold of automotive engine pressure sensor (TMAP), common rail for diesel engine pressure are passed
Sensor；Consumer electronics：Such as tire gauge, sphygomanometer, cupboard scale, health scale, washing machine, dish-washing machine, electric refrigerator, microwave oven, baking box,
Vacuum cleaner pressure transducer, A/C pressure sensor, washing machine, water dispenser, dish-washing machine, solar water heater Liquid level
Pressure transducer；Industrial electronic：Such as digital pressure gauge, digital stream scale, industrial batching weighing etc..
Pressure transducer including type polar distance variable capacitance sensor, capacitor sensor with changed area and change in prior art
Dielectric constant type capacitance sensor, wherein the type polar distance variable capacitance sensor includes fixed plate (fixed plate) and moves
Pole plate (moving plate), wherein the movable plate electrode (moving plate) is moved under the effect of the pressure, it is described fixed
The distance between pole plate and movable plate electrode change, and electric capacity changes, and obtain pressure by the change-detection of the electric capacity
Change.
In prior art, the preparation method of pressure transducer is as shown in Fig. 1 a-1e, wherein first as shown in Figure 1a, there is provided half
Conductor substrate 101, forms dielectric layer 102 in the Semiconductor substrate 101, then in the patterning interlayer dielectric layer
102, groove is formed in middle part, then 104 (the pressure sensitive of deposition pressure sensing membrane in the groove
Diaphragm), the height of the pressure sensing membrane 104 is more than the interlayer dielectric layer 102, on the pressure sensing membrane 104
Isolating membrane 105 is formed, while conductive pole (pillar) 106 is formed in the both sides of the pressure sensing membrane 104, is situated between in the interlayer
The first sacrificial material layer 103 is formed on electric layer 102, pressure sensing membrane 104 and conductive pole (pillar) 106, is then patterned
First sacrificial material layer 103 forms opening, to expose the conductive pole (pillar) 106 and isolating membrane 105, Ran Houcan
According to Fig. 1 b, the opening on the conductive pole (pillar) 106 is filled from metal material, form through hole 107, in the isolating membrane
Movable plate electrode (moving plate) 108 is formed on 105, wherein the movable plate electrode is realized being electrically interconnected by wire, then proceedes to sink
The second sacrificial material layer 109 of product；Reference picture 1c, patterns second sacrificial material layer 109, removes second expendable material
The two ends of layer 109, expose the interlayer dielectric layer 102, while being heard as opening exposes the through hole 107；Reference picture 1d, it is conformal heavy
Product fixed plate material layer 110, then etches the fixed plate material layer 110, forms opening, exposes second sacrificial material layer
109, and first sacrificial material layer 103 and the second sacrificial material layer 109 are removed by the opening etching, with described dynamic
Pole plate forms cavity about 108, form pressure sensor cavities；Reference picture 1e, continues deposition fixed plate material layer to fill shape
Into the opening, obtain the fixed plate closed, and end is carried out to the Semiconductor substrate cut, to expose the pressure sensing membrane
104, obtain conventional pressure transducer.
Although the movable plate electrode and fixed plate of pressure transducer described in prior art are plane, the area of capacitor compared with
Little, the sensitivity and accuracy for causing the pressure transducer is restricted, with the continuous diminution of semiconductor device with
And the continuous renewal of technology, for the sensitivity requirement more and more higher of the pressure transducer, prior art methods described is
The demand can not be met, so need to be improved the preparation method of the pressure transducer, to eliminate the problems referred to above.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will enter in specific embodiment part
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical scheme required for protection
Key feature and essential features, more do not mean that the protection domain for attempting to determine technical scheme required for protection.
The present invention is in order to overcome the problem of presently, there are, there is provided a kind of preparation method of pressure transducer, including：
Semiconductor substrate is provided, interlayer dielectric layer and part inlay are formed with the Semiconductor substrate in the interlayer
Pressure sensing membrane in dielectric layer；
The first sacrificial material layer is deposited on the interlayer dielectric layer；
First sacrificial material layer is patterned, exposes the pressure sensing to be formed in first sacrificial material layer
The movable plate electrode groove of film；
The movable plate electrode groove is filled with conductive material, to form movable plate electrode；
The movable plate electrode is patterned, so that multiple first grooves are formed in the movable plate electrode；
The second sacrificial material layer is deposited in first sacrificial material layer and the movable plate electrode, wherein positioned at described first
The second sacrificial material layer in groove forms the second groove；
Formed in second sacrificial material layer and cover the movable plate electrode groove and part first sacrificial material layer
Mask layer, remove part first sacrificial material layer and the second sacrificial material layer by mask etch of the mask layer, with
Expose the interlayer dielectric layer at two ends；
The mask layer is removed, deposition determines pole in second sacrificial material layer and the interlayer dielectric layer for exposing
Plate, and fill second groove；
Opening is formed on the fixed plate, to expose second sacrificial material layer；
Second sacrificial material layer and the first sacrificial material layer are removed, to form sensor cavities；
Deposition coating, to fill the opening formed in the fixed plate, forms the fixed plate of closing.
Preferably, the step of methods described is additionally included in the back side formation rear channel of the Semiconductor substrate, to reveal
Go out the pressure sensing membrane.
Preferably, methods described also includes that the interlayer removed between the Semiconductor substrate and the pressure sensing membrane is situated between
The step of electric layer.
Preferably, the method for forming pressure sensing membrane includes：
Interlevel dielectric deposition on the semiconductor substrate；
The interlayer dielectric layer is patterned, to form the 3rd groove；
Deposition pressure sensing film materials layer, to fill the 3rd groove, and covers the interlayer dielectric layer；
The pressure sensing membrane layers are etched, the partial pressure sensing film materials layer at two ends is removed, to form the pressure
Power sensing membrane.
Preferably, being formed with through-silicon via structure in the Semiconductor substrate.
Preferably, first sacrificial material layer selects organic material, conductive material or dielectric material；
Second sacrificial material layer selects the material identical or different with first sacrificial material layer；
The movable plate electrode selects polysilicon or metal material；
The fixed plate selects polysilicon or metal material.
Preferably, first sacrificial material layer selects advanced material layer or SiGe layer；
Second sacrificial material layer selects dielectric material；
The movable plate electrode selects metal material；
The fixed plate selects metal material；
The pressure sensing membrane selects dielectric material.
Preferably, the movable plate electrode is in mutually nested loop configuration or the strip structure be arrangeding in parallel, Huo Zhecheng
Column construction, is isolated by second groove.
Preferably, the movable plate electrode groove is in reversed convex type groove.
Preferably, the step of insulating barrier is formed during the movable plate electrode groove was additionally included in before the movable plate electrode is formed
Suddenly, forming isolating membrane between the pressure sensing membrane and the movable plate electrode.
Preferably, the movable plate electrode and the fixed plate are in the case where being under pressure, in the sensor cavities
Vertical-type electric capacity is changed into by plane electric capacity.
Present invention also offers the pressure transducer of said method manufacture.
The present invention is in order to solve problems of the prior art, there is provided a kind of preparation of 3-D MEMS pressure sensors
Method, the 3-D MEMS pressure sensors have higher sensitivity, change described in the 3-D MEMS pressure sensors
The type of capacitor, is changed into vertical-type (vertical) capacitor from conventional plane (planar) type capacitor, while protecting
Same cavity (footprint) is held, the area of the capacitor increases, and improves the spirit of the 3-D MEMS pressure sensors
Sensitivity.
In 3-D MEMS pressure sensors of the present invention, in the pressure sensing membrane (pressure sensor
Membranes film) on, movable plate electrode and fixed plate are provided with change of shape region, when the pressure sensing membrane receives pressure
During power, shape changes, then the distance between the movable plate electrode and fixed plate also change, and the electric capacity of capacitor occurs to become
Change, so as to sensing of the time to the pressure.
Description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this
Bright embodiment and its description, for explaining the device and principle of the present invention.In the accompanying drawings,
Fig. 1 a-1e are the preparation process schematic diagram of pressure transducer in prior art；
Fig. 2 a-2j are the preparation process schematic diagram of sensor described in the embodiment of the invention；
Fig. 3 a-3c be structure described in Fig. 2 c be schematic diagram top view；
Fig. 4 is the preparation technology flow chart of sensor described in the embodiment of the invention.
Specific embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And, it is obvious to the skilled person that the present invention can be able to without the need for one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, for some technical characteristics well known in the art do not enter
Row description.
In order to thoroughly understand the present invention, detailed description will be proposed in following description, to illustrate pressure of the present invention
The preparation method of force transducer.Obviously, what execution of the invention was not limited to that the technical staff of semiconductor applications is familiar with is special
Details.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, the present invention can also have which
His embodiment.
Should give it is noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Intention includes plural form.Additionally, it should be understood that, when in this manual using term "comprising" and/or " including "
When, which indicates there is the feature, entirety, step, operation, element and/or component, but does not preclude the presence or addition of one or many
Individual other features, entirety, step, operation, element, component and/or combinations thereof.
Now, exemplary embodiment of the invention is more fully described with reference to the accompanying drawings.However, these exemplary realities
Apply example to implement with many different forms, and should not be construed to be limited solely to the embodiments set forth herein.Should
It is understood by, there is provided these embodiments are in order that disclosure of the invention is thoroughly and complete, and by these exemplary enforcements
The design of example is fully conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, exaggerate the thickness in layer and region
Degree, and make to be presented with like reference characters identical element, thus description of them will be omitted.
Below in conjunction with the accompanying drawings the preparation method of the pressure transducer of the present invention is further described.
Embodiment 1
First, execution step 201, there is provided Semiconductor substrate 201, are formed with silicon hole in the Semiconductor substrate.
Specifically, reference picture 2a, there is provided Semiconductor substrate 201, the Semiconductor substrate 201, the Semiconductor substrate 201
It can be at least one in the following material being previously mentioned：Silicon (SSOI), absolutely is laminated on silicon, silicon-on-insulator (SOI), insulator
SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. are laminated on edge body.Partly lead
Active area can be defined on body substrate.
Silicon hole is formed with the Semiconductor substrate, the forming method of the silicon hole can select commonly used in the art
Method, it is not limited to a certain method, can be formed from following methods one specifically in embodiment in the present invention
The silicon hole：Formed in the substrate 201 and be open, be subsequently filled metal material, form silicon hole, then deposited metal layer,
Then it is connected with supporting carrier.
Execution step 202, forms interlayer dielectric layer 202 on the semiconductor substrate, and is formed in the dielectric layer
Pressure sensing membrane 203.
With continued reference to Fig. 2 a, interlayer dielectric layer 202 is formed on the semiconductor substrate, wherein the interlayer dielectric layer
202 can use oxide or nitride, and for example the interlayer dielectric layer 202 can use such as SiO2, fluorocarbon
(CF), SiN, carbon doped silicon oxide (SiOC), or carbonitride of silicium (SiCN) etc..Or, it is also possible to using at fluorocarbon (CF)
On define film of SiCN thin film etc..Fluorocarbon is with fluorine (F) and carbon (C) as main component.Fluorocarbon can also make
With the material constructed with noncrystal (amorphism).Interlayer dielectric layer can also be more using such as carbon doped silicon oxide (SiOC) etc.
Hole quality structure is made.Preferably, selecting SiO in the present invention is with specific embodiment2With the one or two kinds of in SiCN
Combination, but it is not limited to the example.
Then the interlayer dielectric layer 202 is patterned, to form the 3rd groove, deposition pressure is passed in the 3rd groove
Sense film 203 (pressure sensitive diaphragm), to fill the 3rd groove, then etches the pressure sensing
Film 203, with the part for the removing two ends pressure sensing membrane 203, retains the pressure sensing membrane 203 positioned at middle part, passes through
The height of the pressure sensing membrane 203 is etched more than the interlayer dielectric layer 202, the pressure sensing membrane 203 of convex shape is formed.
In of the invention one specifically embodiment, the forming method of the pressure sensing membrane 203 is：First described
Mask layer is formed on interlayer dielectric layer 202, such as on interlayer dielectric layer 202, forms organic distribution layer (Organic
Distribution layer, ODL), siliceous bottom antireflective coating (Si-BARC), in the siliceous bottom anti-reflective
The photoresist layer of deposit patterned in coating (Si-BARC), wherein the ditch to be formed of the pattern definition on the photoresist
The figure of groove, then etches organic distribution layer, bottom antireflective coating and first by mask layer of the photoresist layer
Interlayer dielectric layer 202 forms channel patterns；Pressure sensing membrane layers are subsequently filled, finally patterning removes the pressure at two ends
Power sensing film materials layer, to form shape as shown in Figure 2 a.
Execution step 203, deposits the first sacrificial material layer 207, and etches first sacrificial material layer, to form dynamic pole
Plate groove.
Specifically, reference picture 2b deposits the first sacrifice on the interlayer dielectric layer 202 and the pressure sensing membrane 203
Material layer, first sacrificial material layer can select organic material, conductive material and dielectric material, preferably advanced material
Layer (Advanced pattern film, APF) or SiGe.
The present invention a specific embodiment in preferred deposition APF material layer (Advanced pattern film,
APF) as first sacrificial material layer 207, the APF materials that the present invention is selected, relative to traditional ArF, SiON, TEOS,
For Poly masks, in semiconductor device preparation process, performance is more superior, controllable and stable, in the present invention the APF
Material layer is preferably amorphous carbon material, and the deposition of the APF material layers can select chemical vapor deposition (CVD) method, physics
The low-pressure chemical vapor deposition (LPCVD) of the formation such as vapour deposition (PVD) method or ald (ALD) method, laser ablation sink
One kind in product (LAD) and selective epitaxy growth (SEG).Preferred ald (ALD) method in the present invention.As excellent
Choosing, performs chemical-mechanical planarization step after deposition APF material layers, to obtain more flat surface.
Then first sacrificial material layer 207 is patterned, and groove is formed in first sacrificial material layer, wherein institute
That states groove is shaped as down " convex " type groove, and the critical size of the bottom portion of groove is less, and the critical size on top is larger,
The combination of a through hole and a groove is may be considered, wherein the critical size of described " convex " type groove is not limited to certain
One numerical range, can be set as needed.
The groove is filled after the groove is formed and from conductive material, to form movable plate electrode 204, its
Described in movable plate electrode 204 can select polysilicon material layer or metal material layer, in a specific embodiment of the present invention
The groove is filled from metal material, to form the movable plate electrode 204.For example, the movable plate electrode 204 from polysilicon,
One kind in SiGe, Ge, W, Ti and TiN, the deposition process are can to sink for chemical vapor deposition (CVD) method, physical vapor
The low-pressure chemical vapor deposition (LPCVD) of the product formation such as (PVD) method or ald (ALD) method, laser ablation deposition (LAD)
And the one kind in epitaxial growth.
In of the invention one specifically embodiment, from polysilicon as the movable plate electrode 204, and from chemical gas
Mutually deposit (CVD) method and form the movable plate electrode 204, specifically reacting gas can include hydrogen (H2) Silicon chloride. that carries
(SiCl4) or trichlorosilane (SiHCl3), silane (SiH4) and dichloro hydrogen silicon (SiH2Cl2) etc. at least one enter be placed with
The reative cell of silicon substrate, carries out high-temperature chemical reaction in reative cell, makes siliceous reacting gas reduction or thermally decomposes, carries out polysilicon
Deposition.
As further, preferably, the bottom that the groove was included in before movable plate electrode described in formation of deposits 204 is formed
One layer insulating, the insulating barrier are located at the top of the pressure sensing membrane 203, and its thickness is less than bottom Critical in the groove
The depth of the less part groove of size.
Execution step 204, patterns the movable plate electrode 204, to form multiple first grooves 20, and then in the movable plate electrode
It is multiple in 204 to form mutually isolated movable plate electrode electrode.
Specifically, reference picture 2c, etches the movable plate electrode 204, multiple independent dynamic poles is formed in the movable plate electrode 204
Plate electrode, wherein there are between the plurality of movable plate electrode electrode multiple first grooves 20, wherein the depth of first groove 20
Less than the thickness on 204 top of the movable plate electrode, the thickness on 204 top of the movable plate electrode refer in the reversed convex type critical size compared with
The thickness at big position, not to the thickness of 204 entirety of the movable plate electrode, forms figure as shown in Figure 2 c.
It is from dry etching etching the movable plate electrode 204 in a specific embodiment of the present invention, excellent in the present invention
Select C-F etchants to etch the movable plate electrode 204, the C-F etchants are CF4、CHF3、C4F8And C5F8In one kind or many
Kind.In a specific embodiment of the present invention, the dry etching can select CF4、CHF3, in addition plus N2、CO2In
A kind of conduct etching atmosphere, wherein gas flow are CF410-200sccm, CHF310-200sccm, N2Or CO2Or O210-
400sccm, the etching pressure are 30-150mTorr, and etching period is 5-120s, preferably 5-60s, more preferably 5-30s.
Execution step 204, deposits the second expendable material in first sacrificial material layer 207 and the movable plate electrode 204
Layer 205.
Specifically, reference picture 2d, deposits the second sacrificial material layer 205, so that the movable plate electrode electrode and institute is completely covered
State the first sacrificial material layer 207 wherein second sacrificial material layer 205 can from and 207 phase of the first sacrificial material layer
Same material, it is also possible to from different materials.Preferably, second sacrificial material layer 205 can from and described the
One sacrificial material layer, 207 identical material, so that second sacrificial material layer 205 and institute are preferably removed in subsequent step
State the first sacrificial material layer 207.
In of the invention one specifically embodiment, preferred deposition APF material layer (Advanced pattern film,
APF) as second sacrificial material layer 205, the APF materials that the present invention is selected, relative to traditional ArF, SiON, TEOS,
For Poly masks, in semiconductor device preparation process, performance is more superior, controllable and stable, in the present invention the APF
Material layer is preferably amorphous carbon material, and the deposition of the APF material layers can select chemical vapor deposition (CVD) method, physics
The low-pressure chemical vapor deposition (LPCVD) of the formation such as vapour deposition (PVD) method or ald (ALD) method, laser ablation sink
One kind in product (LAD) and selective epitaxy growth (SEG).Preferred ald (ALD) method in the present invention.As excellent
Choosing, performs chemical-mechanical planarization step after deposition APF material layers, to obtain more flat surface.
In this step, the movable plate electrode 204 is patterned, to form multiple second grooves 30, and then in the movable plate electrode
Multiple in 204 to form mutually isolated movable plate electrode electrode, wherein Fig. 2 c are the profile of the plurality of movable plate electrode electrode, wherein scheming
3a is the top view of the plurality of movable plate electrode electrode, in this embodiment wherein described movable plate electrode electrode structure in a ring, wherein
The plurality of movable plate electrode electrode of the mutually nested formation of movable plate electrode electrode of the different loop configuration of multiple radius sizes, it is the plurality of
Between loop configuration for second groove 30.
Execution step 205, forms in second sacrificial material layer and covers the movable plate electrode groove and part described the
The mask layer of one sacrificial material layer, removes part first sacrificial material layer 207 and the by mask etch of the mask layer
Two sacrificial material layers 205, to expose the interlayer dielectric layer 202 at two ends.
Specifically, reference picture 2e, is removed in this step positioned at described in the part of two-end part on the interlayer dielectric layer
First sacrificial material layer 207 and the second sacrificial material layer 205, to expose the interlayer dielectric layer 202 at two ends, in this step
From the first sacrificial material layer 207 described in O base etchant etchings and the second sacrificial material layer 205, in one embodiment of the invention
Middle selection O2Atmosphere, other a small amount of gases such as CF can also be added simultaneously4、CO2、N2, the etching pressure can be 50-
200mTorr, preferably 100-150mTorr, power are 200-600W, and the etching period is 5-80s in the present invention, more excellent
10-60s is selected, while larger gas flow is selected in the present invention, preferably, in O of the present invention2Flow be 30-
300sccm, more preferably 50-100sccm.
Execution step 206, removes the mask layer, in second sacrificial material layer 205 and the interlayer for exposing
Fixed plate 206 is deposited on dielectric layer 202, and fills second groove 30.
Specifically, reference picture 2f, in second sacrificial material layer 205 and the interlayer dielectric layer 202 for exposing
Deposition fixed plate 206, the fixed plate 206 fill the second groove 30 between the movable plate electrode electrode, described to be completely covered
Movable plate electrode 204 and the interlayer dielectric layer 202 for exposing.
Wherein, the fixed plate 206 can select identical with the movable plate electrode 204 or different material, not limit to
In a certain middle embodiment, the fixed plate 206 can be described heavy from the one kind in polysilicon, SiGe, Ge, W, Ti and TiN
It can be the shapes such as chemical vapor deposition (CVD) method, physical vapour deposition (PVD) (PVD) method or ald (ALD) method that product method is
Into low-pressure chemical vapor deposition (LPCVD), the one kind in laser ablation deposition (LAD) and epitaxial growth.
In of the invention one specifically embodiment, from polysilicon as the fixed plate 206, and from chemical gas
Mutually deposit (CVD) method and form the fixed plate 206, specifically reacting gas can include hydrogen (H2) Silicon chloride. that carries
(SiCl4) or trichlorosilane (SiHCl3), silane (SiH4) and dichloro hydrogen silicon (SiH2Cl2) etc. at least one enter be placed with
The reative cell of silicon substrate, carries out high-temperature chemical reaction in reative cell, makes siliceous reacting gas reduction or thermally decomposes, carries out polysilicon
Deposition.
Execution step 207, forms opening, on the fixed plate 206 to expose second sacrificial material layer 205.
Specifically, the fixed plate 206 is etched from deep reaction ion etching (DRIE) method, specifically, first in institute
State and on fixed plate 206, form organic distribution layer (Organic distribution layer, ODL), siliceous bottom anti-reflective
Coating (Si-BARC), the photoresist layer of deposit patterned on the siliceous bottom antireflective coating (Si-BARC), or
The photoresist layer that patterned formed in the fixed plate 206 only, the pattern definition on the photoresist will be formed out
Mouthful figure, then with the photoresist layer as mask layer or with the etching organic distribution layer, bottom antireflective coating,
The lamination that photoresist layer is formed is that mask etch fixed plate 206 forms opening.
The opening makes the erosion positioned at the surface of second sacrificial material layer 205 by controlling the etching process
Carve and stop and the second sacrificial material layer 205, wherein the number of openings can be multiple, in this embodiment, described two
Two mutually isolated openings are formed in sacrificial material layer respectively.
Gas hexa-fluoride (SF is selected in the deep reaction ion etching (DRIE) step6) as process gas, apply
Plus radio-frequency power supply so that hexa-fluoride reaction air inlet forms high ionization, and controlling operating pressure in the etching step is
20mTorr-8Torr, frequency power are 600W, and 13.5MHz, Dc bias can be in continuous controls in -500V -1000V, it is ensured that
The needs of anisotropic etching, can keep very high etching photoresistance to select ratio from deep reaction ion etching (DRIE).Institute
State deep reaction ion etching (DRIE) system and can select the conventional equipment of ability, it is not limited to a certain model.
Execution step 208, removes second sacrificial material layer 205 and the first sacrificial material layer 207, to form sensor
Cavity.
Specifically, reference picture 2h, after forming opening, is open to described second by described on the fixed plate 206
Sacrificial material layer 205 and the first sacrificial material layer 207 are etched, to remove second sacrificial material layer 205 and completely
One sacrificial material layer 207, forms sensor cavities in the surrounding of the fixed plate electrode, to make the fixed plate electrode in institute
Can move in stating sensor cavities, realize the sensing to pressure.
In this step, in order to while second sacrificial material layer 205 and the first sacrificial material layer 207 are removed not
The fixed plate 206 and movable plate electrode electrode can be impacted, be etched from the larger method of etching selectivity, at this
Dry etching, reactive ion etching (RIE), ion beam milling, plasma etching can be selected in invention specific embodiment.
Entered from the second sacrificial material layer 205 described in O base etchant etchings and the first sacrificial material layer 207 in this step
Row etching, in one embodiment of this invention from O2Atmosphere, other a small amount of gases such as CF can also be added simultaneously4、CO2、
N2, the etching pressure can be 50-200mTorr, and preferably 100-150mTorr, power are 200-600W, in the present invention
The etching period is 5-80s, more preferably 10-60s, while larger gas flow is selected in the present invention, preferably,
O of the present invention2Flow be 30-300sccm, more preferably 50-100sccm.
Execution step 209, deposits coating 208, to fill the opening formed in the fixed plate 206, forms envelope
The fixed plate for closing.
Specifically, reference picture 2i, specifically, the coating 208 can be silicon or polysilicon, the coating 208
Deposition process can select chemical vapor deposition (CVD) method, physical vapour deposition (PVD) (PVD) method or ald (ALD) method
Deng formation in low-pressure chemical vapor deposition (LPCVD), laser ablation deposition (LAD) and selective epitaxy growth (SEG) one
Kind, preferably, selecting physical vapour deposition (PVD) (PVD) method in the present invention.
Preferably, the coating 208 is selected and 206 identical material of the fixed plate, in the present invention is concrete
Can be with further precipitation fixed plate material layer, to fill the opening formed in the fixed plate 206, to obtain in embodiment
To the fixed plate 206 of closing.
Execution step 210, methods described are additionally included in the step that the back side of the Semiconductor substrate 201 forms rear channel
Suddenly, exposing the pressure sensing membrane 203.
Specifically, reference picture 2j, forms rear channel at the back side of the Semiconductor substrate 201, to expose the pressure
Sensing membrane 203, for sensing to pressure, also including the layer removed between the Semiconductor substrate and the pressure sensing membrane
Between dielectric layer the step of.
Embodiment 2
In this embodiment, wherein patterning the movable plate electrode 204 in step 204, to form multiple grooves 20, and then
Multiple in the movable plate electrode 204 to form mutually isolated movable plate electrode electrode, wherein Fig. 2 c are the plurality of movable plate electrode electrode
Profile, wherein Fig. 3 b are the top view of the plurality of movable plate electrode electrode, and wherein described movable plate electrode electrode is in this embodiment
Column construction, wherein the arrangement of the movable plate electrode electrode rule of the plurality of column construction, the movable plate electrode of the plurality of column construction
At intervals of the groove 20 between electrode.The shape and embodiment 1 of the movable plate electrode electrode is different, and other steps can be joined
It is improved according to embodiment 1 or according to actual needs.
Embodiment 3
In this embodiment, wherein patterning the movable plate electrode 204 in step 204, to form multiple grooves 20, and then
Multiple in the movable plate electrode 204 to form mutually isolated movable plate electrode electrode, wherein Fig. 2 c are the plurality of movable plate electrode electrode
Profile, wherein Fig. 3 b are the top view of the plurality of movable plate electrode electrode, and wherein described movable plate electrode electrode is in this embodiment
Strip structure, wherein the movable plate electrode electrode runs parallel of the plurality of strip structure is arranged, the movable plate electrode electricity of the plurality of column construction
At intervals of the groove 20 between pole.The shape and embodiment 1 of the movable plate electrode electrode is different, and other steps are referred to
Embodiment 1 is improved according to actual needs.
The present invention is in order to solve problems of the prior art, there is provided a kind of preparation of 3-D MEMS pressure sensors
Method, the 3-D MEMS pressure sensors have higher sensitivity, change described in the 3-D MEMS pressure sensors
The type of capacitor, is changed into vertical-type (vertical) capacitor from conventional plane (planar) type capacitor, while protecting
Same cavity (footprint) is held, the area of the capacitor increases, and improves the spirit of the 3-D MEMS pressure sensors
Sensitivity.
In 3-D MEMS pressure sensors of the present invention, in the pressure sensing membrane (pressure sensor
Membranes film) on, movable plate electrode and fixed plate are provided with change of shape region, when the pressure sensing membrane receives pressure
During power, shape changes, then the distance between the movable plate electrode and fixed plate also change, and the electric capacity of capacitor occurs to become
Change, so as to sensing of the time to the pressure.
Fig. 4 be the embodiment of the invention described in pressure transducer preparation technology flow chart, specifically include with
Lower step：
Step 201 provide Semiconductor substrate, be formed with the Semiconductor substrate interlayer dielectric layer and part inlay in
Pressure sensing membrane in the interlayer dielectric layer；
Step 202 deposits the first sacrificial material layer on the interlayer dielectric layer；
Step 203 patterns first sacrificial material layer, is exposed with the formation in first sacrificial material layer described
The movable plate electrode groove of pressure sensing membrane；
Step 204 fills the movable plate electrode groove with conductive material, to form movable plate electrode；
Step 205 patterns the movable plate electrode, so that multiple first grooves are formed in the movable plate electrode；
Step 206 deposits the second sacrificial material layer in first sacrificial material layer and the movable plate electrode, wherein being located at
The second sacrificial material layer in first groove forms the second groove；
Step 207 forms the covering movable plate electrode groove in second sacrificial material layer and part described first is sacrificed
The mask layer of material layer, removes part first sacrificial material layer and the second expendable material by mask etch of the mask layer
Layer, to expose the interlayer dielectric layer at two ends；
Step 208 removes the mask layer, in second sacrificial material layer and the interlayer dielectric layer for exposing
Deposition fixed plate, and fill second groove；
Step 209 forms opening on the fixed plate, to expose second sacrificial material layer；
Step 210 removes second sacrificial material layer and the first sacrificial material layer, to form sensor cavities；
Step 211 deposits coating, to fill the opening formed in the fixed plate, forms the fixed plate of closing.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and descriptive purpose, and be not intended to limit the invention in described scope of embodiments.In addition people in the art
Member is it is understood that the invention is not limited in above-described embodiment, teaching of the invention can also be made more kinds of
Variants and modifications, within these variants and modifications all fall within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (12)
1. a kind of preparation method of pressure transducer, including：
Semiconductor substrate is provided, interlayer dielectric layer and part inlay are formed with the Semiconductor substrate in the interlayer dielectric
Pressure sensing membrane in layer；
The first sacrificial material layer is deposited on the interlayer dielectric layer；
First sacrificial material layer is patterned, exposes the pressure sensing membrane to be formed in first sacrificial material layer
Movable plate electrode groove；
The movable plate electrode groove is filled with conductive material, to form movable plate electrode；
The movable plate electrode is patterned, so that multiple first grooves are formed in the movable plate electrode；
The second sacrificial material layer is deposited in first sacrificial material layer and the movable plate electrode, wherein positioned at first groove
The second interior sacrificial material layer forms the second groove；
Formed in second sacrificial material layer and cover covering for the movable plate electrode groove and part first sacrificial material layer
Film layer, removes part first sacrificial material layer and the second sacrificial material layer by mask etch of the mask layer, to expose
The interlayer dielectric layer at two ends；
The mask layer is removed, and fixed plate is deposited in second sacrificial material layer and the interlayer dielectric layer for exposing,
And fill second groove；
Opening is formed on the fixed plate, to expose second sacrificial material layer；
Second sacrificial material layer and the first sacrificial material layer are removed, to form sensor cavities；
Deposition coating, to fill the opening formed in the fixed plate, forms the fixed plate of closing.
2. method according to claim 1, it is characterised in that methods described is additionally included in the back side of the Semiconductor substrate
The step of forming rear channel, to expose the pressure sensing membrane.
3. method according to claim 2, it is characterised in that methods described also includes removing the Semiconductor substrate and institute
The step of stating the interlayer dielectric layer between pressure sensing membrane.
4. method according to claim 1, it is characterised in that the method for forming the pressure sensing membrane includes：
Interlevel dielectric deposition on the semiconductor substrate；
The interlayer dielectric layer is patterned, to form the 3rd groove；
Deposition pressure sensing film materials layer, to fill the 3rd groove, and covers the interlayer dielectric layer；
The pressure sensing membrane layers are etched, the partial pressure sensing film materials layer at two ends is removed, is passed with forming the pressure
Sense film.
5. method according to claim 1, it is characterised in that be formed with through-silicon via structure in the Semiconductor substrate.
6. method according to claim 1, it is characterised in that first sacrificial material layer selects organic material, conduction
Material or dielectric material；
Second sacrificial material layer selects the material identical or different with first sacrificial material layer；
The movable plate electrode selects polysilicon or metal material；
The fixed plate selects polysilicon or metal material.
7. method according to claim 6, it is characterised in that
First sacrificial material layer selects advanced material layer or SiGe layer；
Second sacrificial material layer selects dielectric material；
The movable plate electrode selects metal material；
The fixed plate selects metal material；
The pressure sensing membrane selects dielectric material.
8. method according to claim 1, it is characterised in that the movable plate electrode be in mutually nested loop configuration or
The strip structure be arrangeding in parallel, or cylindrical structure, are isolated by second groove.
9. method according to claim 1, it is characterised in that the movable plate electrode groove is in reversed convex type groove.
10. method according to claim 1, it is characterised in that be additionally included in before the movable plate electrode is formed described dynamic
The step of insulating barrier is formed in plate grooves, so that isolation is formed between the pressure sensing membrane and the movable plate electrode.
11. methods according to claim 1, it is characterised in that the movable plate electrode and the fixed plate are being under pressure
In the case of, vertical-type electric capacity is changed into by plane electric capacity in the sensor cavities.
The pressure transducer that 12. methods according to any one of claim 1-11 are manufactured.
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| CN104897334B (en) * | 2015-06-29 | 2017-07-21 | 歌尔股份有限公司 | A kind of MEMS pressure sensors |
| DE102017212613B9 (en) * | 2017-07-21 | 2020-04-30 | Infineon Technologies Ag | MEMS device and manufacturing method for a MEMS device |
| EP3654005B1 (en) * | 2018-11-15 | 2022-05-11 | TE Connectivity Solutions GmbH | Differential pressure sensor device |
| CN111649782B (en) * | 2020-07-28 | 2022-02-08 | 江苏睦荷科技有限公司 | Platform made of single-chip integrated multi-axis MEMS sensor and manufacturing method thereof |
| CN112033583A (en) * | 2020-09-10 | 2020-12-04 | 武汉大学 | SiC capacitance pressure sensor with surface array boss structure and preparation method |
| CN113603054B (en) * | 2021-07-26 | 2024-01-26 | 杭州士兰微电子股份有限公司 | MEMS sensor and preparation method thereof |
| CN113670485A (en) * | 2021-09-01 | 2021-11-19 | 青岛芯笙微纳电子科技有限公司 | High-performance MEMS pressure sensor and manufacturing method thereof |
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| CN101087999A (en) * | 2004-12-22 | 2007-12-12 | 罗伯特·博世有限公司 | Micromechanical capacitive sensor element |
| CN202018355U (en) * | 2011-03-29 | 2011-10-26 | 福建省安特半导体有限公司 | Miniature high-temperature pressure sensor structure |
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