CN113670485A - High-performance MEMS pressure sensor and manufacturing method thereof - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000007789 sealing Methods 0.000 claims abstract description 15
- 239000003990 capacitor Substances 0.000 claims abstract description 6
- 239000012528 membrane Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 36
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a high-performance MEMS pressure sensor and a manufacturing method thereof, the pressure sensor sequentially comprises a substrate, a first sacrificial layer, a lower sensitive film layer, a second sacrificial layer and an upper sensitive film layer from bottom to top, a metal electrode is arranged on the upper surface of the middle part of the substrate, a first release hole and a circle of first through holes surrounding the periphery of the first release hole are formed in the lower sensitive film layer above the metal electrode, a second release hole is formed in the upper sensitive film layer above the metal electrode, the first sacrificial layer and the second sacrificial layer above the metal electrode pass through the first release hole, the second release hole and the first through hole are corroded to form a cavity, the upper sensitive film layer and the lower sensitive film layer which are positioned above the metal electrode are respectively released into an upper sensitive film and a lower sensitive film, the centers of the upper sensitive film layer and the lower sensitive film layer are connected through a central column, the second release hole is filled with a sealing plug, and the lower sensitive film layer and the metal electrode form a sensitive capacitor. The pressure sensor disclosed by the invention has the advantages of high sensitivity, good linearity and high accuracy of a measuring result.
Description
Technical Field
The invention belongs to the technical field of MEMS (micro-electromechanical systems) sensing, and particularly relates to a high-performance MEMS pressure sensor and a manufacturing method thereof.
Background
The MEMS sensor has the advantages of small volume, light weight, low power consumption, easy integration with COMS and the like. Sensors that have been successfully commercialized at present include accelerometers, gyroscopes, pressure sensors, microphones, and the like. Pressure sensors are a typical representation of MEMS sensors. According to different sensitive modes, the pressure sensor can be divided into a piezoresistive type, a capacitive type and a resonant type. The capacitive pressure sensor has lower power consumption and better stability compared with other two types, and therefore has attracted extensive attention in research and industry. However, the non-linearity inherent in the capacitance sensitive approach has also limited the multi-scenario applications of this type of sensor.
The following is a brief description of the capacitance sensitive approach. Consider a parallel plate capacitor in which one plate is fixed and the other is movable, the overlapping area of the plates is A and the spacing is d0. When the movable pole plate is displaced by delta d in the direction vertical to the plane of the pole plate, the capacitance of the pole plate is as follows:
it can be seen that the capacitance expression has second and higher power terms, i.e., non-linear terms.
Conventional capacitive pressure sensors employ a single sensitive diaphragm design that exhibits a parabolic-like deformation profile under pressure, i.e., the amount of deformation in the center of the diaphragm is greatest and the edge is least. It can be seen that this design, while simple in construction and easy to manufacture, does not make effective use of the sensitivity contribution of the edge region. In addition, the non-linearity of the sensor is further exacerbated by the non-linear variation of the spacing d.
Therefore, how to improve the design to improve the sensitivity of the sensor and improve the non-linearity is a problem that the skilled person is urgently required to solve.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a high performance MEMS pressure sensor and a method for manufacturing the same, so as to achieve the purpose of improving the sensitivity of the sensor and improving the nonlinearity.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a high-performance MEMS pressure sensor comprises a substrate, a first sacrificial layer, a lower sensitive film layer, a second sacrificial layer and an upper sensitive film layer from bottom to top in sequence, the upper surface of the middle part of the substrate is provided with a metal electrode, a lower sensitive film layer positioned above the metal electrode is provided with a plurality of first release holes and a circle of first through holes surrounding the first release holes, an upper sensitive film layer positioned above the metal electrode is provided with a plurality of second release holes, a first sacrificial layer and a second sacrificial layer positioned above the metal electrode are corroded through the first release holes, the second release holes and the first through holes to form a cavity, meanwhile, the upper sensitive film layer and the lower sensitive film layer which are positioned above the metal electrode are respectively released into an upper sensitive membrane and a lower sensitive membrane, the centers of the upper sensitive membrane and the lower sensitive membrane are connected through a central column, a sealing plug is filled in the second release hole, and the lower sensitive membrane and the metal electrode form a sensitive capacitor.
In the scheme, the middle parts of the substrate and the metal electrode are provided with a second through hole communicated with the cavity.
In the above scheme, the substrate is made of silicon.
In the above scheme, the first sacrificial layer and the second sacrificial layer are made of silicon oxide.
In the above scheme, the upper sensitive film layer, the lower sensitive film layer and the central column are made of monocrystalline silicon or polycrystalline silicon.
In the above scheme, the sealing plug is made of silicon oxide, silicon nitride or polysilicon.
A manufacturing method of a high-performance MEMS pressure sensor comprises the following steps:
(1) depositing a metal electrode on the middle area of the upper surface of the silicon substrate;
(2) depositing a first sacrificial layer on the upper surfaces of the silicon substrate and the metal electrode;
(3) depositing or extending a lower sensitive film layer on the upper surface of the first sacrificial layer, etching a plurality of first release holes in the middle area of the lower sensitive film layer, and etching a circle of first through holes at the periphery of the first release holes;
(4) depositing a second sacrificial layer on the upper surface of the lower sensitive film layer, and etching a third through hole in the center;
(5) depositing or extending an upper sensitive film layer on the upper surface of the second sacrificial layer, thereby forming a central column at the third through hole and etching a second release hole in the middle area of the upper sensitive film layer;
(6) Removing the first sacrificial layer and the second sacrificial layer above the metal electrode through the first release hole, the second release hole and the first through hole by adopting a wet etching process to form a cavity, wherein the upper sensitive film layer and the lower sensitive film layer above the metal electrode are respectively released into an upper sensitive membrane and a lower sensitive membrane;
(7) and sealing the second release hole of the upper sensitive film layer by adopting a film sealing process to form a vacuum cavity.
In the scheme, the method further comprises a step (8) of forming a second through hole communicated with the cavity in the middle of the substrate and the metal electrode through a dry etching process.
In the above scheme, in the step (2), the planarization treatment is performed on the upper surface of the first sacrificial layer by using a chemical mechanical polishing method according to the thickness of the metal electrode.
Through the technical scheme, the high-performance MEMS pressure sensor and the manufacturing method thereof provided by the invention have the following beneficial effects:
the invention adopts a structure of two sensitive membranes, wherein the lower sensitive membrane is in a free state and is connected with the upper sensitive membrane only through the central column, when gas pressure is applied to the upper sensitive membrane, the maximum displacement is generated at the center of the upper sensitive membrane and is transmitted to the lower sensitive membrane through the central column, so that the lower sensitive membrane can vibrate up and down like a piston, and the deformation quantity of the center and the edge of the lower sensitive membrane are relatively close. Because the lower sensitive membrane and the metal electrode positioned on the substrate form the sensitive capacitor, the operation mode can effectively utilize the sensitivity contribution of the edge area of the lower sensitive membrane, and ensure that the distance d between the lower sensitive membrane and the metal electrode is linearly changed along with the pressure, thereby being beneficial to improving the measurement precision of the MEMS pressure sensor.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 is a schematic diagram of a high performance MEMS pressure sensor disclosed in embodiment 1 of the present invention;
FIG. 2 is a schematic diagram of a high performance MEMS pressure sensor disclosed in embodiment 2 of the present invention;
fig. 3 a-3 g are flow charts of a method for fabricating a MEMS pressure sensor according to embodiment 1 of the present invention;
fig. 4 is a schematic diagram of a high-performance MEMS pressure sensor manufactured by another manufacturing method disclosed in embodiment 2 of the present invention.
In the figure, 100, a substrate; 101. a second through hole; 201. a first sacrificial layer; 202. a second sacrificial layer; 203. an upper sensitive film layer; 204. a central column; 205. a lower sensitive film layer; 206. a release hole I; 207. a first through hole; 208. a third through hole; 209. a release hole II; 30. a sealing plug; 40. a metal electrode; 50. a cavity; 60. an upper sensitive membrane; 70. and a lower sensitive membrane.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The invention provides a high-performance MEMS pressure sensor, which comprises a substrate 100, a first sacrificial layer 201, a lower sensitive film layer 205, a second sacrificial layer 202 and an upper sensitive film layer 203 from bottom to top in sequence as shown in embodiment 1 of FIG. 1.
The upper surface of the middle part of the substrate 100 is provided with a metal electrode 40, a lower sensitive film layer 205 positioned above the metal electrode 40 is provided with a plurality of first release holes 206 and a circle of first through holes 207 surrounding the periphery of the first release holes 206, an upper sensitive film layer 203 positioned above the metal electrode 40 is provided with a plurality of second release holes 209, a first sacrificial layer 201 and a second sacrificial layer 202 positioned above the metal electrode 40 are corroded through the first release holes 206, the second release holes 209 and the first through holes 207 to form a cavity 50, and meanwhile, the upper sensitive film layer 203 and the lower sensitive film layer 205 positioned above the metal electrode 40 are respectively released into an upper sensitive membrane 60 and a lower sensitive membrane 70.
The centers of the upper sensitive membrane 60 and the lower sensitive membrane 70 are connected through the central column 204, when the upper sensitive membrane 60 is under pressure, the lower sensitive membrane 70 can be driven to vibrate up and down through the central column 204, and because the lower sensitive membrane 70 is in a free state, the deformation quantities of the center and the edge of the lower sensitive membrane 70 are relatively close, the sensitivity contribution of the edge region of the lower sensitive membrane can be effectively utilized, and the linear change of the distance d between the lower sensitive membrane and the metal electrode along with the pressure is ensured. The second release hole 209 is filled with a sealing plug 30 to form a vacuum cavity, and the lower sensitive membrane 70 and the metal electrode 40 form a sensitive capacitor.
The MEMS pressure sensor with the structure of the embodiment 1 can realize absolute pressure measurement.
As shown in fig. 2, in embodiment 2 of the present invention, a second through hole 101 communicating with the cavity 50 is formed in the middle of the substrate 100 and the metal electrode 40, and the MEMS pressure sensor with this structure can implement gauge pressure measurement.
In embodiments 1 and 2 of the present invention, the substrate 100 is made of silicon, the first sacrificial layer 201 and the second sacrificial layer 202 are made of silicon oxide, the upper sensitive film layer 203, the lower sensitive film layer 205, and the central pillar 204 are made of monocrystalline silicon or polycrystalline silicon, and the sealing plug 30 is made of silicon oxide, silicon nitride, or polycrystalline silicon.
The manufacturing method of the high-performance MEMS pressure sensor in embodiment 1 of the invention comprises the following steps:
(1) depositing a metal electrode 40 on the middle region of the upper surface of the silicon substrate 100, as shown in fig. 3 a;
(2) depositing a first sacrificial layer 201 on the upper surfaces of the silicon substrate 100 and the metal electrode 40, as shown in fig. 3 b; according to the thickness of the metal electrode 40, the upper surface of the first sacrificial layer 201 is planarized by chemical mechanical polishing;
(3) depositing or extending a lower sensitive film layer 205 on the upper surface of the first sacrificial layer 201, etching a plurality of first release holes 206 in the middle region of the lower sensitive film layer 205, and etching a circle of first through holes 207 on the periphery of the first release holes 206, as shown in fig. 3 c;
(4) Depositing a second sacrificial layer 202 on the upper surface of the lower sensitive film layer 205, and etching a third via hole 208 in the central position, as shown in fig. 3 d;
(5) depositing or extending an upper sensitive film layer 203 on the upper surface of the second sacrificial layer 202, thereby forming a central pillar 204 at a third through hole 208, and etching a second release hole 209 in the middle region of the upper sensitive film layer 203, as shown in fig. 3 e;
(6) removing the first sacrificial layer 201 and the second sacrificial layer 202 above the metal electrode 40 through the first release hole 206, the second release hole 209 and the first through hole 207 by using a wet etching process to form a cavity 50, wherein the upper sensitive film layer 203 and the lower sensitive film layer 205 above the metal electrode 40 are respectively released into an upper sensitive membrane 60 and a lower sensitive membrane 70, the lower sensitive membrane 70 is separated from the edge at the first through hole 207 and becomes a free state, and is connected with the upper sensitive membrane 60 only by the central column 204, as shown in fig. 3 f;
(7) and sealing the second release hole 209 of the upper sensitive film layer 203 by using a thin film sealing process to form a sealing plug 30 so as to form a vacuum cavity, as shown in fig. 3 g.
In embodiment 2 of the present invention, the method further includes step (8), opening a second through hole 101 communicating with the cavity 50 in the middle of the substrate 100 and the metal electrode 40 by a dry etching process.
In the actual processing process of embodiment 2 of the present invention, in order to save the process and simplify the structure, in step (5), the second release hole 209 is not etched on the upper sensitive film layer 203, the second through hole 101 communicating with the cavity 50 is directly opened in the middle of the substrate 100 and the metal electrode 40 through a dry etching process, and then the first sacrificial layer 201 and the second sacrificial layer 202 are etched through the second through hole 101 to form the cavity 50, as shown in fig. 4.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A high-performance MEMS pressure sensor is characterized by sequentially comprising a substrate, a first sacrificial layer, a lower sensitive film layer, a second sacrificial layer and an upper sensitive film layer from bottom to top, wherein a metal electrode is arranged on the upper surface of the middle part of the substrate, a plurality of first release holes and a circle of first through holes surrounding the peripheries of the first release holes are formed in the lower sensitive film layer above the metal electrode, a plurality of second release holes are formed in the upper sensitive film layer above the metal electrode, the first sacrificial layer and the second sacrificial layer above the metal electrode are corroded through the first release holes, the second release holes and the first through holes to form a cavity, meanwhile, the upper sensitive film layer and the lower sensitive film layer above the metal electrode are respectively released into an upper sensitive film and a lower sensitive film, the centers of the upper sensitive film and the lower sensitive film are connected through a central column, sealing plugs are filled in the second release holes, the lower sensitive membrane and the metal electrode form a sensitive capacitor.
2. The high performance MEMS pressure sensor of claim 1, wherein a second via is formed in the middle of the substrate and the metal electrode and communicates with the cavity.
3. A high performance MEMS pressure sensor as claimed in claim 1, wherein said substrate is silicon.
4. The high performance MEMS pressure sensor of claim 1, wherein the first sacrificial layer and the second sacrificial layer are made of silicon oxide.
5. The high performance MEMS pressure sensor of claim 1, wherein the upper sensitive membrane layer, the lower sensitive membrane layer and the central post are made of single crystal silicon or polysilicon.
6. A high performance MEMS pressure sensor as claimed in claim 1, wherein the material of the sealing plug is silicon oxide, silicon nitride or polysilicon.
7. A method of fabricating a high performance MEMS pressure sensor as claimed in claim 1, comprising the steps of:
(1) depositing a metal electrode on the middle area of the upper surface of the silicon substrate;
(2) depositing a first sacrificial layer on the upper surfaces of the silicon substrate and the metal electrode;
(3) depositing or extending a lower sensitive film layer on the upper surface of the first sacrificial layer, etching a plurality of first release holes in the middle area of the lower sensitive film layer, and etching a circle of first through holes at the periphery of the first release holes;
(4) Depositing a second sacrificial layer on the upper surface of the lower sensitive film layer, and etching a third through hole in the center;
(5) depositing or extending an upper sensitive film layer on the upper surface of the second sacrificial layer, thereby forming a central column at the third through hole and etching a second release hole in the middle area of the upper sensitive film layer;
(6) removing the first sacrificial layer and the second sacrificial layer above the metal electrode through the first release hole, the second release hole and the first through hole by adopting a wet etching process to form a cavity, and simultaneously releasing the upper sensitive film layer and the lower sensitive film layer above the metal electrode into an upper sensitive membrane and a lower sensitive membrane respectively;
(7) and sealing the second release hole of the upper sensitive film layer by adopting a film sealing process to form a vacuum cavity.
8. The method for manufacturing a high-performance MEMS pressure sensor according to claim 7, further comprising a step (8) of forming a second through hole communicating with the cavity in the middle of the substrate and the metal electrode by a dry etching process.
9. The method according to claim 7, wherein in the step (2), the upper surface of the first sacrificial layer is planarized by chemical mechanical polishing according to the thickness of the metal electrode.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114674485A (en) * | 2022-02-21 | 2022-06-28 | 华中科技大学 | Small-range MEMS capacitive pressure sensor and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114674485A (en) * | 2022-02-21 | 2022-06-28 | 华中科技大学 | Small-range MEMS capacitive pressure sensor and preparation method thereof |
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Application publication date: 20211119 |