CN108640079A - A kind of vacuum encapsulation structure and its packaging method - Google Patents
A kind of vacuum encapsulation structure and its packaging method Download PDFInfo
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- CN108640079A CN108640079A CN201810382661.3A CN201810382661A CN108640079A CN 108640079 A CN108640079 A CN 108640079A CN 201810382661 A CN201810382661 A CN 201810382661A CN 108640079 A CN108640079 A CN 108640079A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0361—Tips, pillars
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The purpose of the application is to provide a kind of vacuum encapsulation structure and its packaging method, void column structure and trench architectures are etched in the vacuum encapsulation structure of the application on the silicon substrate of vacuum cavity, void column structure and trench architectures are filled using heat insulator, it is connected to silicon substrate and suspension membrane structure, the sensitive mechanical strength for structure can not only be enhanced, while the heat insulator will not bring the increase of thermal losses；Since trench architectures are in the underface of suspension membrane structure, it is not connect with silicon substrate, it can also be while enhancing the mechanical strength of sensitive microstructure, the increase of thermal losses will not be brought, the mechanical strength and reliability that sensitive microstructure is not only increased using the design of void column structure and trench architectures, may also reach up good uniformity；In addition, the Vacuum Package in package cavity body eliminates the gas heat transfer below suspension membrane structure, improves the thermal insulation of heat sensor, improves signal strength calmly.
Description
Technical field
This application involves Vacuum Package field more particularly to a kind of vacuum encapsulation structure and its packaging methods.
Background technology
MEMS Vacuum Packages are a kind of encapsulation technologies providing high gas-tight vacuum environment using seal cavity, and Vacuum Package makes
The moving part of MEMS device works under vacuum environment, has ensured that the quality factor of MEMS device, Vacuum Package can also subtract
Few thermal losses, improves device performance.MEMS package plays a very important role in MEMS device production process, is device energy
One step of key of enough practical applications.
In the encapsulating structure of MEMS device, as shown in Figure 1：Generally by will MEMS heat sensors suspension structure below
Silicon substrate all remove divided by realize thermal insulation, but：Since the heat transfer below suspension structure is related to silicon substrate removal depth,
Typically silicon substrate is all removed, to realize maximum thermal insulation；Again since suspension structure generally uses silica
And silicon nitride, and thickness is generally 1~2um, and the mechanical strength of suspension structure is very poor；Again due to the silicon lining below suspension structure
Bottom all removes, and cannot achieve the hermetically sealed of chip structure, thus the hermetically sealed of chip results is caused more to complicate.
Invention content
The purpose of the application is to provide a kind of vacuum encapsulation structure and its packaging method, is being sealed with solving the prior art
Thermal losses caused by during dress and the low problem of suspension film construction machine intensity.
According to the one side of the application, a kind of vacuum encapsulation structure is provided, wherein including：
Encapsulation cavity 1, be provided on the encapsulation cavity 1 successively sensitive microstructure 2 and sensitive thin film 3, release aperture 4 and
Through-hole sealing-plug 5, wherein
The encapsulation cavity 1 include silicon substrate 11, void column structure 12, trench architectures 13, filling film 14, support membrane 15 and
Suspension membrane structure 16 is etched with void column structure 12 and trench architectures 13 on the silicon substrate 11, and the filling film 14 is filled in
In the void column structure 12 and trench architectures 13, the support membrane 15 is bonded in the etched surface of the silicon substrate 11；The release
The sensitive microstructure 2 and sensitive thin film 3 are run through in hole 4, and are vertically installed in the etched surface of the silicon substrate 11；From the release
The silicon substrate 11 is corroded at hole 4, forms the suspension membrane structure 16, wherein the corrosion depth of the silicon substrate 11
Etching depth more than the etching depth of the trench architectures 13 and less than the void column structure 12；
It will be evacuated in the suspension membrane structure 16 by the release aperture 4, form vacuum chamber 17, and the through-hole is sealed
Plug 5 is tightly connected with the venthole 4.
Further, in above-mentioned vacuum encapsulation structure, the sensitive microstructure 2 includes infrared sensor.
Further, in above-mentioned vacuum encapsulation structure, the infrared sensor includes pyroelectric infrared sensor, thermoelectric pile
Infrared sensor and thermistor infrared sensor.
Further, in above-mentioned vacuum encapsulation structure, the filling film 14 is lower thermal conductivity film.
Further, in above-mentioned vacuum encapsulation structure, the material of the filling film 14 is heat insulator.
Further, in above-mentioned vacuum encapsulation structure, the quantity of the void column structure 12 is at least one；And/or it is described
The quantity of trench architectures 13 is at least one.
Further, in above-mentioned vacuum encapsulation structure, the quantity of the release aperture 4 is at least one.
According to the another aspect of the application, a kind of packaging method for realizing above-mentioned vacuum encapsulation structure is additionally provided, wherein
It the described method comprises the following steps：
Step 1: void column structure 12 and trench architectures 13 are etched on the silicon substrate 11 in the encapsulation cavity 1 successively, and
Filling filling film 14 in the void column structure 12 respectively, and carry out planarization process and form support membrane 15, wherein the support
Film 15 is bonded in the etched surface of the silicon substrate 11；
Step 2: making sensitive microstructure 2 on the support membrane 15；
Step 3: depositing sensitive thin-film material on the sensitive microstructure 2, sensitive thin film 3 is formed；
Step 4: run through the sensitive microstructure 2 and the sensitive thin film 3, and at the quarter perpendicular to the silicon substrate 11
Release aperture 4 is made on erosion face；
Step 5: corroding to the silicon substrate 11 from the release aperture 4, suspension membrane structure 16 is formed, wherein institute
The corrosion depth for stating silicon substrate 11 is more than the etching depth of the trench architectures 13 and less than the etching of the void column structure 12 depth
Degree；
Step 6: will be evacuated in the suspension membrane structure 16 by the release aperture 4, vacuum chamber 17 is formed, and will be described
Through-hole sealing-plug 5 is tightly connected with the venthole 4.
Further, in the packaging method for realizing above-mentioned vacuum encapsulation structure, in the step 1 successively in the envelope
It behave affectedly on the silicon substrate 11 in body 1 and etches void column structure 12 and trench architectures 13, including：
Using deep silicon plasma etching technology, void column structure is etched on the silicon substrate 11 in the encapsulation cavity 1 successively
12 and trench architectures 13.
Compared with prior art, a kind of vacuum encapsulation structure is provided in the embodiment of the present application, wherein including：Package cavity
Body 1 is provided with sensitive microstructure 2 and sensitive thin film 3, release aperture 4 and through-hole sealing-plug 5 on the encapsulation cavity 1 successively,
In, the encapsulation cavity 1 includes silicon substrate 11, void column structure 12, trench architectures 13, filling film 14, support membrane 15 and suspends
Membrane structure 16, void column structure 12 and trench architectures 13 are etched on the silicon substrate 11, and the filling film 14 is filled in described
In void column structure 12 and trench architectures 13, the support membrane 15 is bonded in the etched surface of the silicon substrate 11；The release aperture 4 is passed through
The sensitive microstructure 2 and sensitive thin film 3 are worn, and is vertically installed in the etched surface of the silicon substrate 11；From the release aperture 4
The silicon substrate 11 is corroded, the suspension membrane structure 16 is formed, wherein the corrosion depth of the silicon substrate 11 is more than institute
State the etching depth of trench architectures 13 and the etching depth less than the void column structure 12；So that passing through trench architectures 13 and void column
Structure 12 can enhance the mechanical strength of sensitive microstructure；
It will be evacuated in the suspension membrane structure 16 by the release aperture 4, form vacuum chamber 17, and the through-hole is sealed
Plug 5 is tightly connected with the venthole 4, heat transfer caused by the gas to eliminate 16 lower section of suspension membrane structure, Jin Erti
High thermal insulation.
Description of the drawings
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, the application's is other
Feature, objects and advantages will become more apparent upon：
Fig. 1 shows the structure for the MEMS heat sensors that the silicon substrate in the prior art by below suspension structure all removes
Schematic diagram；
Fig. 2 shows the structural representations of the application one side being packaged to MEMS heat sensors using Vacuum Package
Figure；
Fig. 3 shows a kind of structural schematic diagram of the MEMS heat sensors of Vacuum Package of the application one side；
Fig. 4 shows the schematic diagram of the etching void column structure of the silicon substrate in the vacuum encapsulation structure in one embodiment of the application；
Fig. 5 shows that the application to void column structure filling film and carries out the signal after planarization process on the basis of Fig. 4
Figure；
Fig. 6 shows that the application etches trench architectures to silicon substrate on the basis of Fig. 5 and fills film and planarization process
Schematic diagram afterwards；
Fig. 7 shows that the application makes the schematic diagram after sensitive microstructure on the basis of Fig. 6 on support membrane；
Fig. 8 shows that the application deposits the schematic diagram after sensitive thin-film material on the basis of Fig. 7 on sensitive microstructure；
Fig. 9 shows that the application makes the schematic diagram after release pore structure on the basis of Fig. 8 on the etched surface of silicon substrate；
Figure 10 show the application on the basis of Fig. 9 from release aperture at silicon substrate is corroded after schematic diagram；
Same or analogous reference numeral represents same or analogous component in attached drawing.
Specific implementation mode
The application is described in further detail below in conjunction with the accompanying drawings.
As shown in Fig. 2, a kind of vacuum encapsulation structure provided in one embodiment of the application, wherein including：
Encapsulation cavity (201) is provided with sensitive microstructure (202) and sensitivity is thin on the encapsulation cavity (201) successively
Film (203), release aperture (204) and through-hole sealing-plug (205), wherein
The encapsulation cavity (201) includes silicon substrate (211), support membrane (221) and suspension membrane structure (231), the branch
Support film (221) is bonded in the erosional surface of the silicon substrate (211)；The release aperture (204) runs through the sensitive microstructure (202)
With sensitive thin film (203), and it is vertically installed in the erosional surface of the silicon substrate (211)；To described at the release aperture (204)
Silicon substrate (211) is corroded, and the suspension membrane structure (231) is formed；
It will be evacuated in the suspension membrane structure (231) by the release aperture (204), form vacuum chamber (206), and by institute
Through-hole sealing-plug (205) is stated to be tightly connected with the venthole (204),
Wherein, the quantity of the release aperture (204) is at least one；
The sensitive microstructure (202) includes infrared sensor, here, the infrared sensor may include that pyroelectricity is red
Outer sensor, thermopile infrared sensor and thermistor infrared sensor etc..
As shown in Fig. 2, being packaged to MEMS heat sensors using Vacuum Package, by suspension film construction packages in vacuum chamber
Interior realizes the Vacuum Package to MEMS heat sensors, since the Vacuum Package in figure needs to increase additional covering plate structure,
So that chip becomes large-sized；Again due to using film vacuum encapsulating structure, need to make release pore structure in suspension film, so
One layer of vacuum sealing membrane is deposited afterwards, and the thickness of suspending film can increase, and because of the stress of vacuum sealing membrane itself, hang
The mechanical strength of frivolous film can be weakened further, and suspension sensitive structure is by very easy rupture, and then the application is as shown in Figure 3
Another embodiment in additionally provide a kind of vacuum encapsulation structure, the mechanical strength of suspending film can be enhanced, avoid suspending quick
Feel structure breaking.
As shown in figure 3, a kind of vacuum encapsulation structure based on MEMS heat sensors that one embodiment of the application provides is whole
Body schematic diagram, wherein the encapsulating structure includes：Encapsulation cavity 1 is provided with sensitive micro- knot on the encapsulation cavity 1 successively
Structure 2 and sensitive thin film 3, release aperture 4 and through-hole sealing-plug 5, wherein
The encapsulation cavity 1 include silicon substrate 11, void column structure 12, trench architectures 13, filling film 14, support membrane 15 and
Suspension membrane structure 16 is etched with void column structure 12 and trench architectures 13 on the silicon substrate 11, and the filling film 14 is filled in
In the void column structure 12 and trench architectures 13, the support membrane 15 is bonded in the etched surface of the silicon substrate 11；The release
The sensitive microstructure 2 and sensitive thin film 3 are run through in hole 4, and are vertically installed in the etched surface of the silicon substrate 11；From the release
The silicon substrate 11 being corroded at hole 4, forms the suspension membrane structure 16, can will be encapsulated with will pass through the release aperture 4
The evacuations such as all air in suspension membrane structure 16 in cavity, so formed vacuum chamber 17, later again by through-hole sealing-plug 5 with
Venthole 4 is tightly connected, and can not only be eliminated heat transfer caused by the gas of 16 lower section of suspension membrane structure, be also improved thermal insulation
Property, and then signal strength can be improved.
During etching and corrosion, the corrosion depth of the silicon substrate 11 is more than the etching depth of the trench architectures 13
And less than the etching depth of the void column structure 12；So that void column structure 12 is connected to silicon substrate 11 and suspension membrane structure 16, energy
It is enough to support suspension membrane structure 16 to resist external atmospheric pressure, and then enhance the mechanical strength of sensitive microstructure 2, meanwhile, it should
The material for the filling film 14 filled in void column structure 12 is heat insulator so that heat insulator will not bring thermal losses
Increase；Again since trench architectures 13 are immediately below suspension membrane structure 16, it is not connect with silicon substrate 11, and the material of the void column structure 12
Material is heat insulator, realizes while enhancing the mechanical strength of sensitive microstructure 2, will not bring the increasing of thermal losses
Add.
Sensitive microstructure 2 in the vacuum encapsulation structure that one embodiment of the application provides includes infrared sensor, this is red
Outer sensor can including but not limited to include：Pyroelectric infrared sensor, thermopile infrared sensor and thermistor are red
Outer sensor etc., i.e., vacuum encapsulation structure provided by the present application may be implemented to existing or be likely to occur from now on all infrared
The Vacuum Package of sensor, and then the thermal insulation of infrared sensor is improved, to improve the signal strength of infrared sensor.
It is filled in void column structure 12 and trench architectures 13 in the vacuum encapsulation structure that one embodiment of the application provides
The filling film 14 includes but not limited to be：LPCVD(Low pressure chemical vapor deposition
(LPCVD), low pressure chemical deposition) TEOS films and other lower thermal conductivity films, reach to void column structure 12 and trench architectures 13
More preferable, uniform filling effect.
One embodiment of the application provide vacuum encapsulation structure in void column structure 12 quantity be it is at least one and/or
The quantity of the trench architectures 13 is at least one, such as is shown in Fig. 3：In one preferred embodiment of the application by void column
Structure etching is 2, and the etching of trench architectures 13 is 12, is to evenly distributedly be risen to suspension membrane structure and sensitive microstructure
To supporting role, external atmospheric pressure can be resisted by supporting suspension membrane structure, can not only be enhanced mechanical strength, be prevented brokenly
It splits, also improves the reliability and uniformity of entire encapsulating structure.
The quantity of release aperture 4 in the vacuum encapsulation structure that one embodiment of the application provides may be one or more
It is a, such as be shown in Fig. 3：The making 6 on the etched surface perpendicular to silicon substrate 11 in one preferred embodiment of the application is released
Discharge hole, so as to uniformly, rapidly by evacuations such as air in suspension membrane structure 16.According to the another aspect of the application, also provide
It is a kind of to realize the packaging method such as the vacuum encapsulation structure in Fig. 3, wherein to the described method comprises the following steps：
Step 1: void column structure 12 and trench architectures 13 are etched on the silicon substrate 11 in the encapsulation cavity 1 successively, and
Filling filling film 14 in the void column structure 12 respectively, and carry out planarization process and form support membrane 15, wherein the support
Film 15 is bonded in the etched surface of the silicon substrate 11；
For example, as shown in figure 4, using deep silicon plasma etching (DRIE) technology in the silicon substrate encapsulated in cavity 1
Void column structure 12 is etched on 11, the quantity of the void column structure 12 can be one or more；
As shown in figure 5, on the architecture basics of Fig. 4, heat insulator is filled in all void column structures 12 of etching
Film (such as LPCVD TEOS films etc.) is filled, and carries out planarization process；
As shown in fig. 6, on the basis of the result of Fig. 5, using deep silicon plasma etching (DRIE) technology on silicon substrate 11
The quantity of the etching phase trench architectures 13 more shallow compared with void column structure 12, the trench architectures 13 can be one or more,
Filling filling film (such as LPCVD TEOS films etc.) in all trench architectures 13 of etching, and carry out planarization process and formed
Support membrane 15 so that the support membrane 15 is bonded in the etched surface of silicon substrate 11；
Step 2: sensitive microstructure 2 is made on the support membrane 15, as shown in fig. 7, the sensitive microstructure can be packet
Infrared sensor is included but is not limited to, which can be that including but not limited to formula electricity infrared sensor, thermoelectric pile are red
Outer sensor and thermistor infrared sensor etc.；
Step 3: depositing sensitive thin-film material on the sensitive microstructure 2, it is as shown in Figure 8 to form sensitive thin film 3；Example
Such as, if sensitive microstructure is infrared sensor, which is the infrared absorption layer of infrared sensor；
Step 4: as shown in figure 9, running through the sensitive microstructure 2 and the sensitive thin film 3, and perpendicular to the silicon
Release aperture 4 is made on the etched surface of substrate 11, the quantity of the release aperture 4 is one or more；
Step 5: as shown in Figure 10, corroding to the silicon substrate 11 from the release aperture 4, suspension film knot is formed
Structure 16, wherein the corrosion depth of the silicon substrate 11 is more than the etching depth of the trench architectures 13 and is less than the void column knot
The etching depth of structure 12；
Step 6: will be evacuated in the suspension membrane structure 16 by the release aperture 4, vacuum chamber 17 is formed so that entire
Suspension membrane structure 16 reduces cause thermal damage using Vacuum Package, and the through-hole sealing-plug 5 is tightly connected with the venthole 4,
To realize Vacuum Package and the sealing to suspension membrane structure, as shown in Figure 3.
In the packaging method of vacuum encapsulation structure in the present embodiment, the void column structure 12 uses heat insulator system
At, be connected to silicon substrate and suspension membrane structure, can not only enhance it is sensitive be structure mechanical strength, while the heat insulator
The increase of thermal losses will not be brought；Again since trench architectures 13 are in the underface of suspension membrane structure, it does not connect with silicon substrate, also may be used
While enhancing the mechanical strength of sensitive microstructure, the increase of thermal losses will not be brought, pass through void column structure 12 and irrigation canals and ditches
Structure 13 not only increases the mechanical strength and reliability of sensitive microstructure, may also reach up good uniformity；In addition, it encapsulates
Vacuum Package in cavity eliminates the gas heat transfer below suspension membrane structure, improves the thermal insulation of heat sensor, from
Appearance improves signal strength.
Obviously, those skilled in the art can carry out the application essence of the various modification and variations without departing from the application
God and range.In this way, if these modifications and variations of the application belong to the range of the application claim and its equivalent technologies
Within, then the application is also intended to include these modifications and variations.
It is obvious to a person skilled in the art that the application is not limited to the details of above-mentioned exemplary embodiment, Er Qie
In the case of without departing substantially from spirit herein or essential characteristic, the application can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and scope of the present application is by appended power
Profit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent requirements of the claims
Variation is included in the application.Any reference signs in the claims should not be construed as limiting the involved claims.This
Outside, it is clear that one word of " comprising " is not excluded for other units or step, and odd number is not excluded for plural number.That is stated in device claim is multiple
Unit or device can also be realized by a unit or device by software or hardware.The first, the second equal words are used for table
Show title, and does not represent any particular order.
Claims (10)
1. a kind of vacuum encapsulation structure, wherein including：
Encapsulation cavity (1) is provided with sensitive microstructure (2) and sensitive thin film (3), release on the encapsulation cavity (1) successively
Hole (4) and through-hole sealing-plug (5), wherein
The encapsulation cavity (1) includes silicon substrate (11), void column structure (12), trench architectures (13), filling film (14), support
Film (15) and suspension membrane structure (16) are etched with void column structure (12) and trench architectures (13) on the silicon substrate (11), described
Filling film (14) is filled in the void column structure (12) and trench architectures (13), and the support membrane (15) is bonded in the silicon
The etched surface of substrate (11)；The release aperture (4) runs through the sensitive microstructure (2) and sensitive thin film (3), and is vertically installed in
The etched surface of the silicon substrate (11)；The silicon substrate is corroded at the release aperture (4), forms the suspension film knot
Structure (16), wherein the corrosion depth of the silicon substrate (11) is more than the etching depth of the trench architectures (13) and less than described
The etching depth of void column structure (12)；
It will be evacuated in the suspension membrane structure (16) by the release aperture (4), form vacuum chamber (17), and the through-hole is close
Blocking (5) is tightly connected with the venthole (4).
2. vacuum encapsulation structure according to claim 1, wherein the sensitive microstructure (2) includes infrared sensor.
3. vacuum encapsulation structure according to claim 3, wherein the infrared sensor includes rpyroelectric infrared sensing
Device, thermopile infrared sensor and thermistor infrared sensor.
4. vacuum encapsulation structure according to claim 1, wherein the filling film (14) is lower thermal conductivity film.
5. vacuum encapsulation structure according to claim 1, wherein the material of the filling film is heat insulator.
6. vacuum encapsulation structure according to claim 1, wherein the quantity of the void column structure (12) be it is at least one,
And/or the quantity of the trench architectures (13) is at least one.
7. vacuum encapsulation structure according to claim 1, wherein the quantity of the release aperture (4) is at least one.
8. a kind of vacuum encapsulation structure, wherein including：
Encapsulation cavity (201) on the encapsulation cavity (201) is provided with sensitive microstructure (202) and sensitive thin film successively
(203), release aperture (204) and through-hole sealing-plug (205), wherein
The encapsulation cavity (201) includes silicon substrate (211), support membrane (221) and suspension membrane structure (231), the support membrane
(221) it is bonded in the erosional surface of the silicon substrate (211)；The release aperture (204) is through the sensitive microstructure (202) and quick
Feel film (203), and is vertically installed in the erosional surface of the silicon substrate (211)；The silicon is served as a contrast at the release aperture (204)
Bottom (211) is corroded, and the suspension membrane structure (231) is formed；
It will be evacuated in the suspension membrane structure (231) by the release aperture (204), form vacuum chamber (206), and will be described logical
Hole sealing-plug (205) is tightly connected with the venthole (204),
Wherein, the quantity of the release aperture (204) is at least one；
The sensitive microstructure (202) includes infrared sensor.
9. a kind of packaging method for realizing the vacuum encapsulation structure as described in any one of claim 1 to 7, wherein the side
Method includes the following steps：
Step 1: etching void column structure (12) and trench architectures on the silicon substrate (11) in the encapsulation cavity (1) successively
(13), and respectively film (14) is filled in filling in the void column structure (12), and is carried out planarization process and formed support membrane (15),
Wherein, the support membrane (15) is bonded in the etched surface of the silicon substrate (11)；
Step 2: making sensitive microstructure (2) on the support membrane (15)；
Step 3: depositing sensitive thin-film material on the sensitive microstructure (2), sensitive thin film (3) is formed；
Step 4: run through the sensitive microstructure (2) and the sensitive thin film (3), and perpendicular to the silicon substrate (11)
Release aperture (4) is made on etched surface；
Step 5: corroding to the silicon substrate (11) at the release aperture (4), suspension membrane structure (16) is formed, wherein
The corrosion depth of the silicon substrate (11) is more than the etching depth of the trench architectures (13) and is less than the void column structure (12)
Etching depth；
Step 6: will be evacuated in the suspension membrane structure (16) by the release aperture (4), vacuum chamber (17) is formed, and by institute
Through-hole sealing-plug (5) is stated to be tightly connected with the venthole (4).
10. the packaging method of vacuum encapsulation structure according to claim 9, wherein in the step 1 successively in institute
Etching void column structure (12) and trench architectures (13) on the silicon substrate (11) in encapsulation cavity (1) are stated, including：
Using deep silicon plasma etching technology, void column structure is etched on the silicon substrate (11) in the encapsulation cavity (1) successively
(12) and trench architectures (13).
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| CN201810382661.3A CN108640079B (en) | 2018-04-26 | 2018-04-26 | Vacuum packaging structure and packaging method thereof |
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| CN201810382661.3A CN108640079B (en) | 2018-04-26 | 2018-04-26 | Vacuum packaging structure and packaging method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113670485A (en) * | 2021-09-01 | 2021-11-19 | 青岛芯笙微纳电子科技有限公司 | High-performance MEMS pressure sensor and manufacturing method thereof |
| CN115377015A (en) * | 2022-08-29 | 2022-11-22 | 北京超材信息科技有限公司 | Packaging structure of electronic device and manufacturing method |
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Denomination of invention: A vacuum packaging structure and its packaging method Effective date of registration: 20230317 Granted publication date: 20200623 Pledgee: Industrial Bank Co.,Ltd. Shanghai Putuo sub branch Pledgor: Shanghai Yeying Microelectronics Technology Co.,Ltd. Registration number: Y2023310000070 |