CN108640079B - Vacuum packaging structure and packaging method thereof - Google Patents
Vacuum packaging structure and packaging method thereof Download PDFInfo
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- CN108640079B CN108640079B CN201810382661.3A CN201810382661A CN108640079B CN 108640079 B CN108640079 B CN 108640079B CN 201810382661 A CN201810382661 A CN 201810382661A CN 108640079 B CN108640079 B CN 108640079B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0361—Tips, pillars
Abstract
The vacuum packaging structure comprises a hollow column structure and a ditch structure etched on a silicon substrate of a vacuum cavity, wherein the hollow column structure and the ditch structure are filled with a thermal insulation material, and the silicon substrate and a suspended membrane structure are connected, so that the mechanical strength of the sensitive structure can be enhanced, and the thermal insulation material cannot bring about the increase of heat loss; the ditch structure is arranged right below the suspended membrane structure and is not connected with the silicon substrate, so that the mechanical strength of the sensitive microstructure can be enhanced, the increase of heat loss can not be caused, and the mechanical strength and reliability of the sensitive microstructure are enhanced and good uniformity can be achieved by adopting the design of the hollow column structure and the ditch structure; in addition, the vacuum packaging in the packaging cavity eliminates the heat conduction of the gas below the suspended membrane structure, improves the thermal insulation of the thermal sensor, and improves the signal intensity.
Description
Technical Field
The present disclosure relates to the field of vacuum packaging, and more particularly, to a vacuum packaging structure and a packaging method thereof.
Background
The MEMS vacuum packaging is a packaging technology which adopts a sealed cavity to provide a high-airtight vacuum environment, the vacuum packaging enables a movable part of the MEMS device to work in the vacuum environment, quality factors of the MEMS device are guaranteed, heat loss can be reduced through the vacuum packaging, and the performance of the device is improved. MEMS packaging plays a very important role in the production process of MEMS devices, and is a key step for practical application of the devices.
In the packaging structure of the MEMS device, as shown in fig. 1: thermal isolation is commonly achieved by removing the silicon substrate entirely under the suspended structure of the MEMS thermal sensor, but: since the heat conduction below the suspension structure is related to the silicon substrate removal depth, the silicon substrate is generally completely removed to realize maximum thermal insulation; because the suspension structure generally adopts silicon oxide and silicon nitride, and the thickness is generally 1-2 um, the mechanical strength of the suspension structure is poor; and because the silicon substrate below the suspension structure is completely removed, the sealing packaging of the chip structure cannot be realized, and the sealing packaging of the chip structure is more complicated.
Disclosure of Invention
An object of the present application is to provide a vacuum package structure and a packaging method thereof, so as to solve the problems of heat loss and low mechanical strength of a floating film structure caused in the packaging process in the prior art.
According to an aspect of the present application, there is provided a vacuum packaging structure, including:
a sensitive microstructure 2, a sensitive film 3, a release hole 4 and a through hole sealing plug 5 are sequentially arranged on a packaging cavity 1, wherein,
the packaging cavity 1 comprises a silicon substrate 11, a hollow column structure 12, a trench structure 13, a filling film 14, a support film 15 and a suspension film structure 16, wherein the hollow column structure 12 and the trench structure 13 are etched on the silicon substrate 11, the filling film 14 is filled in the hollow column structure 12 and the trench structure 13, and the support film 15 is adhered to the etching surface of the silicon substrate 11; the release hole 4 penetrates through the sensitive microstructure 2 and the sensitive film 3 and is vertically arranged on the etching surface of the silicon substrate 11; corroding the silicon substrate 11 from the release holes 4 to form the suspended membrane structure 16, wherein the corrosion depth of the silicon substrate 11 is greater than the etching depth of the trench structure 13 and less than the etching depth of the hollow column structure 12;
and evacuating the interior of the suspended membrane structure 16 through the release hole 4 to form a vacuum cavity 17, and hermetically connecting the through hole sealing plug 5 with the vent hole 4.
Further, in the vacuum packaging structure, the sensitive microstructure 2 includes an infrared sensor.
Further, in the vacuum package structure, the infrared sensor includes a pyroelectric infrared sensor, a thermopile infrared sensor, and a thermistor infrared sensor.
Further, in the vacuum packaging structure, the filling film 14 is a low thermal conductivity film.
Further, in the vacuum package structure, the material of the filling film 14 is a thermal insulation material.
Further, in the vacuum packaging structure, the number of the hollow pillar structures 12 is at least one; and/or the number of trench structures 13 is at least one.
Further, in the vacuum packaging structure, the number of the release holes 4 is at least one.
According to another aspect of the present application, there is also provided an encapsulation method for implementing the vacuum encapsulation structure, wherein the method includes the following steps:
etching a hollow column structure 12 and a channel structure 13 on a silicon substrate 11 in the packaging cavity 1 in sequence, filling a film 14 in the hollow column structure 12 respectively, and performing planarization treatment to form a support film 15, wherein the support film 15 is bonded on the etched surface of the silicon substrate 11;
secondly, manufacturing a sensitive microstructure 2 on the support film 15;
depositing a sensitive film material on the sensitive microstructure 2 to form a sensitive film 3;
fourthly, penetrating the sensitive microstructure 2 and the sensitive film 3, and manufacturing a release hole 4 on an etching surface vertical to the silicon substrate 11;
etching the silicon substrate 11 from the release hole 4 to form a suspended film structure 16, wherein the etching depth of the silicon substrate 11 is greater than the etching depth of the trench structure 13 and less than the etching depth of the hollow column structure 12;
and step six, evacuating the interior of the suspended membrane structure 16 through the release hole 4 to form a vacuum cavity 17, and hermetically connecting the through hole sealing plug 5 with the vent hole 4.
Further, in the method for implementing the vacuum package structure, etching the hollow pillar structure 12 and the trench structure 13 on the silicon substrate 11 in the package cavity 1 in sequence in the step one includes:
and etching a hollow column structure 12 and a ditch structure 13 on a silicon substrate 11 in the packaging cavity 1 in sequence by adopting a deep silicon plasma etching technology.
Compared with the prior art, the embodiment of the present application provides a vacuum packaging structure, wherein, include: the packaging structure comprises a packaging cavity 1 and a substrate, wherein the packaging cavity 1 is sequentially provided with a sensitive microstructure 2, a sensitive film 3, a release hole 4 and a through hole sealing plug 5, the packaging cavity 1 comprises a silicon substrate 11, a hollow column structure 12, a trench structure 13, a filling film 14, a support film 15 and a suspension film structure 16, the hollow column structure 12 and the trench structure 13 are etched on the silicon substrate 11, the filling film 14 is filled in the hollow column structure 12 and the trench structure 13, and the support film 15 is adhered to the etched surface of the silicon substrate 11; the release hole 4 penetrates through the sensitive microstructure 2 and the sensitive film 3 and is vertically arranged on the etching surface of the silicon substrate 11; corroding the silicon substrate 11 from the release holes 4 to form the suspended membrane structure 16, wherein the corrosion depth of the silicon substrate 11 is greater than the etching depth of the trench structure 13 and less than the etching depth of the hollow column structure 12; so that the mechanical strength of the sensitive microstructure can be enhanced by the trench structure 13 and the hollow pillar structure 12;
the interior of the suspended membrane structure 16 is evacuated through the release hole 4 to form a vacuum cavity 17, and the through hole sealing plug 5 is hermetically connected with the vent hole 4, so that heat conduction caused by gas below the suspended membrane structure 16 is eliminated, and further, the thermal insulation is improved.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
FIG. 1 shows a schematic structural view of a prior art MEMS thermal sensor with the silicon substrate under the suspended structure removed entirely;
FIG. 2 illustrates a schematic diagram of a MEMS thermal sensor package employing vacuum packaging in accordance with an aspect of the subject application;
FIG. 3 illustrates a schematic diagram of a vacuum packaged MEMS thermal sensor in accordance with an aspect of the subject application;
FIG. 4 is a schematic diagram illustrating a silicon substrate etched hollow pillar structure in a vacuum package structure according to an embodiment of the present disclosure;
FIG. 5 is a schematic diagram of the present application after filling a thin film on the empty pillar structure and performing a planarization process on the empty pillar structure based on FIG. 4;
FIG. 6 is a schematic diagram of the present application after trench structure etching, film filling and planarization processing are performed on a silicon substrate based on FIG. 5;
FIG. 7 is a schematic diagram of the present application after a sensitive microstructure is fabricated on a support film based on the structure shown in FIG. 6;
FIG. 8 is a schematic diagram of the present application after depositing a sensitive thin film material on the sensitive microstructure based on FIG. 7;
FIG. 9 is a schematic diagram showing the present application after a release hole structure is formed on the etched surface of the silicon substrate based on FIG. 8;
FIG. 10 is a schematic diagram of the present application after etching a silicon substrate from a release hole based on FIG. 9;
the same or similar reference numbers in the drawings identify the same or similar elements.
Detailed Description
The present application is described in further detail below with reference to the attached figures.
As shown in fig. 2, an embodiment of the present application provides a vacuum package structure, which includes:
a packaging cavity (201), a sensitive microstructure (202), a sensitive film (203), a release hole (204) and a through hole sealing plug (205) are sequentially arranged on the packaging cavity (201), wherein,
the packaging cavity (201) comprises a silicon substrate (211), a support film (221) and a suspension film structure (231), wherein the support film (221) is bonded on the etched surface of the silicon substrate (211); the release hole (204) penetrates through the sensitive microstructure (202) and the sensitive film (203) and is vertically arranged on the etched surface of the silicon substrate (211); etching the silicon substrate (211) from the release holes (204) to form the suspended membrane structure (231);
evacuating the interior of the suspended membrane structure (231) through the release hole (204) to form a vacuum cavity (206), and hermetically connecting the through hole sealing plug (205) with the vent hole (204),
wherein the number of the release holes (204) is at least one;
the sensitive microstructure (202) comprises an infrared sensor, wherein the infrared sensor can comprise a pyroelectric infrared sensor, a thermopile infrared sensor, a thermistor infrared sensor and the like.
As shown in fig. 2, the MEMS thermal sensor is packaged by vacuum packaging, and the suspended membrane structure is packaged in the vacuum chamber, so that the vacuum packaging of the MEMS thermal sensor is realized, and the size of the chip is increased due to the additional cover plate structure required for the vacuum packaging in the figure; in addition, due to the fact that a film vacuum packaging structure is adopted, a release hole structure needs to be manufactured on the suspension film, then a layer of vacuum sealing film is deposited, the thickness of the suspension film can be increased, the mechanical strength of the suspension film can be further weakened due to the stress of the vacuum sealing film, the suspension sensitive structure can be very easily broken, and further the vacuum packaging structure is provided in another embodiment shown in fig. 3, the mechanical strength of the suspension film can be enhanced, and the breakage of the suspension sensitive structure can be avoided.
As shown in fig. 3, an embodiment of the present application provides an overall schematic view of a vacuum package structure based on a MEMS thermal sensor, wherein the package structure includes: a sensitive microstructure 2, a sensitive film 3, a release hole 4 and a through hole sealing plug 5 are sequentially arranged on a packaging cavity 1, wherein,
the packaging cavity 1 comprises a silicon substrate 11, a hollow column structure 12, a trench structure 13, a filling film 14, a support film 15 and a suspension film structure 16, wherein the hollow column structure 12 and the trench structure 13 are etched on the silicon substrate 11, the filling film 14 is filled in the hollow column structure 12 and the trench structure 13, and the support film 15 is adhered to the etching surface of the silicon substrate 11; the release hole 4 penetrates through the sensitive microstructure 2 and the sensitive film 3 and is vertically arranged on the etching surface of the silicon substrate 11; the silicon substrate 11 is corroded from the release hole 4 to form the suspended membrane structure 16, so that all air and the like in the suspended membrane structure 16 in the packaging cavity can be evacuated through the release hole 4 to form a vacuum cavity 17, and then the through hole sealing plug 5 is hermetically connected with the vent hole 4, so that heat conduction caused by air below the suspended membrane structure 16 can be eliminated, thermal insulation is improved, and signal strength can be improved.
In the etching and etching processes, the etching depth of the silicon substrate 11 is greater than the etching depth of the trench structure 13 and less than the etching depth of the hollow column structure 12; the hollow column structure 12 is connected with the silicon substrate 11 and the suspension film structure 16, the suspension film structure 16 can be supported to resist the external atmospheric pressure, and further the mechanical strength of the sensitive microstructure 2 is enhanced, and meanwhile, the material of the filling film 14 filled in the hollow column structure 12 is a thermal insulation material, so that the thermal insulation material does not bring about the increase of thermal loss; and because the trench structure 13 is under the suspended film structure 16 and is not connected with the silicon substrate 11, and the materials of the hollow column structure 12 are all thermal insulation materials, the mechanical strength of the sensitive microstructure 2 is enhanced, and the increase of heat loss is not brought at the same time.
The sensitive microstructure 2 in the vacuum packaging structure provided by an embodiment of the present application includes an infrared sensor, which may include but is not limited to: pyroelectric infrared sensor, thermopile infrared sensor and thermistor infrared sensor etc. promptly, the vacuum packaging structure that this application provided can realize the vacuum packaging to present or all infrared sensor that probably appear in future, and then improves infrared sensor's thermal insulation nature to improve infrared sensor's signal strength.
The filling film 14 filled in the empty pillar structure 12 and the trench structure 13 in the vacuum package structure provided by an embodiment of the present application includes, but is not limited to: LPCVD (Low pressure chemical vapor deposition) TEOS film and other Low thermal conductivity films achieve a better and uniform filling effect for the hollow pillar structure 12 and the trench structure 13.
In an embodiment of the present application, the number of the hollow pillar structures 12 in the vacuum package structure is at least one and/or the number of the trench structures 13 is at least one, for example, as shown in fig. 3: in a preferred embodiment of the present application, the number of the hollow pillar structures is 2, and the number of the trench structures 13 is 12, so that the floating film structures and the sensitive microstructures are supported in an evenly distributed manner, and the supported floating film structures can resist external atmospheric pressure, thereby not only enhancing mechanical strength and preventing cracking, but also improving reliability and uniformity of the whole packaging structure.
The number of the release holes 4 in the vacuum package structure provided in an embodiment of the present application may also be one or more, for example, as shown in fig. 3: in a preferred embodiment of the present application, 6 release holes are formed on the etched surface perpendicular to the silicon substrate 11 to uniformly and rapidly evacuate air and the like in the floating film structure 16. According to another aspect of the present application, there is also provided an encapsulation method for implementing the vacuum encapsulation structure in fig. 3, wherein the method includes the following steps:
etching a hollow column structure 12 and a channel structure 13 on a silicon substrate 11 in the packaging cavity 1 in sequence, filling a film 14 in the hollow column structure 12 respectively, and performing planarization treatment to form a support film 15, wherein the support film 15 is bonded on the etched surface of the silicon substrate 11;
for example, as shown in fig. 4, a deep silicon plasma etching (DRIE) technique is used to etch the hollow pillar structures 12 on the silicon substrate 11 in the package cavity 1, and the number of the hollow pillar structures 12 may be one or more;
as shown in fig. 5, on the basis of the structure of fig. 4, filling films (e.g., LPCVD TEOS films, etc.) of thermal insulating materials are filled in all the etched hollow pillar structures 12, and planarization processing is performed;
as shown in fig. 6, based on the result of fig. 5, trench structures 13 that are shallower than the empty pillar structures 12 are etched on the silicon substrate 11 by using a deep silicon plasma etching (DRIE) technique, the number of the trench structures 13 may be one or more, all the trench structures 13 are filled with a thin film (e.g., LPCVD TEOS film, etc.) and planarized to form a support film 15, such that the support film 15 is adhered to the etched surface of the silicon substrate 11;
step two, manufacturing a sensitive microstructure 2 on the support film 15, as shown in fig. 7, wherein the sensitive microstructure may include but is not limited to an infrared sensor, and the infrared sensor may include but is not limited to a type electric infrared sensor, a thermopile infrared sensor, a thermistor infrared sensor, and the like;
depositing a sensitive film material on the sensitive microstructure 2 to form a sensitive film 3 as shown in FIG. 8; for example, if the sensitive microstructure is an infrared sensor, the sensitive film 3 is an infrared absorbing layer of the infrared sensor;
fourthly, as shown in fig. 9, release holes 4 are made through the sensitive microstructure 2 and the sensitive film 3 and on the etching surface vertical to the silicon substrate 11, wherein the number of the release holes 4 is one or more;
step five, as shown in fig. 10, corroding the silicon substrate 11 from the release holes 4 to form a suspended film structure 16, wherein the corrosion depth of the silicon substrate 11 is greater than the etching depth of the trench structure 13 and less than the etching depth of the hollow column structure 12;
and step six, evacuating the interior of the suspended membrane structure 16 through the release hole 4 to form a vacuum cavity 17, so that the whole suspended membrane structure 16 is subjected to vacuum packaging to reduce thermal damage, and the through hole sealing plug 5 is hermetically connected with the vent hole 4 to realize vacuum packaging and sealing of the suspended membrane structure, as shown in fig. 3.
In the packaging method of the vacuum packaging structure in this embodiment, the hollow pillar structure 12 is made of a thermal insulation material, and is connected to the silicon substrate and the floating film structure, so that not only can the mechanical strength of the sensitive structure be enhanced, but also the thermal insulation material does not bring about an increase in heat loss; the ditch structure 13 is arranged right below the suspended membrane structure and is not connected with the silicon substrate, so that the mechanical strength of the sensitive microstructure can be enhanced, the increase of heat loss can not be caused, the mechanical strength and the reliability of the sensitive microstructure are enhanced through the hollow column structure 12 and the ditch structure 13, and good uniformity can be achieved; in addition, the vacuum packaging in the packaging cavity eliminates the heat conduction of the gas below the suspended membrane structure, improves the thermal insulation of the thermal sensor, and improves the signal intensity.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
It will be evident to those skilled in the art that the present application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned. Furthermore, it is obvious that the word "comprising" does not exclude other elements or steps, and the singular does not exclude the plural. A plurality of units or means recited in the apparatus claims may also be implemented by one unit or means in software or hardware. The terms first, second, etc. are used to denote names, but not any particular order.
Claims (2)
1. A method for encapsulating a vacuum encapsulation structure, wherein the method comprises the following steps:
etching a hollow column structure (12) and a channel structure (13) on a silicon substrate (11) in a packaging cavity (1) in sequence, filling a thin film (14) in the hollow column structure (12) and the channel structure (13) respectively, and performing planarization treatment to form a support film (15), wherein the support film (15) is bonded on the etched surface of the silicon substrate (11);
secondly, manufacturing a sensitive microstructure (2) on the support film (15);
thirdly, depositing a sensitive film material on the sensitive microstructure (2) to form a sensitive film (3);
fourthly, penetrating the sensitive microstructure (2) and the sensitive film (3), and manufacturing a release hole (4) on an etching surface vertical to the silicon substrate (11);
etching the silicon substrate (11) from the release hole (4) to form a suspended film structure (16), wherein the etching depth of the silicon substrate (11) is greater than that of the trench structure (13) and less than that of the hollow column structure (12);
and sixthly, evacuating the interior of the suspended membrane structure (16) through the release hole (4) to form a vacuum cavity (17), and hermetically connecting the through hole sealing plug (5) with the release hole (4).
2. The packaging method of the vacuum packaging structure according to claim 1, wherein the etching of the hollow pillar structure (12) and the trench structure (13) on the silicon substrate (11) in the packaging cavity (1) in sequence in the first step comprises:
and etching the hollow column structure (12) and the ditch structure (13) on the silicon substrate (11) in the packaging cavity (1) in sequence by adopting a deep silicon plasma etching technology.
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| CN201810382661.3A CN108640079B (en) | 2018-04-26 | 2018-04-26 | Vacuum packaging structure and packaging method thereof |
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| CN113670485A (en) * | 2021-09-01 | 2021-11-19 | 青岛芯笙微纳电子科技有限公司 | High-performance MEMS pressure sensor and manufacturing method thereof |
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Address after: 201800 room 236, 2 / F, building 2, 1399 Shengzhu Road, Juyuan New District, Jiading District, Shanghai Patentee after: Shanghai Yeying Microelectronics Technology Co.,Ltd. Address before: Room j310, building 1, 2222 Huancheng Road, Juyuan New District, Jiading District, Shanghai, 201899 Patentee before: SHANGHAI YEYING ELECTRONIC TECHNOLOGY Co.,Ltd. |
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Denomination of invention: A vacuum packaging structure and its packaging method Effective date of registration: 20230317 Granted publication date: 20200623 Pledgee: Industrial Bank Co.,Ltd. Shanghai Putuo sub branch Pledgor: Shanghai Yeying Microelectronics Technology Co.,Ltd. Registration number: Y2023310000070 |
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