CN115377015A - Packaging structure of electronic device and manufacturing method - Google Patents
Packaging structure of electronic device and manufacturing method Download PDFInfo
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- CN115377015A CN115377015A CN202211042443.8A CN202211042443A CN115377015A CN 115377015 A CN115377015 A CN 115377015A CN 202211042443 A CN202211042443 A CN 202211042443A CN 115377015 A CN115377015 A CN 115377015A
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The application provides a packaging structure of an electronic device, which comprises a substrate, a first electronic device, a first electrode, a second electronic device, a second electrode and a filling material, wherein the first electrode is arranged between the first electronic device and the upper surface of the substrate, a first gap is formed between the first electronic device and the upper surface of the substrate, the second electrode is arranged between the second electronic device and the upper surface of the substrate, a second gap is formed between the second electronic device and the upper surface of the substrate, at least one vacuum flow channel is arranged at the orthographic projection position of the first electronic device on the substrate, and the vacuum flow channel penetrates through the substrate; and the outer sides of the first electronic device and the second electronic device are provided with isolating films for isolating the filling material from the first gap and the second gap, and when negative pressure is generated above the substrate, the filling material breaks through the isolating films to fill the first gap. All bubbles can be eliminated and all gaps of the electronic device can be filled when the filling material is filled, and the packaging time is short and the efficiency is high.
Description
Technical Field
The application relates to the technical field of packaging, in particular to a packaging structure of an electronic device and a manufacturing method of the packaging structure.
Background
In the packaging process of the electronic device in the prior art, it is necessary to wait for the filling material to gradually diffuse inwards from the gaps of the electronic device, which not only can not ensure to eliminate all bubbles and fill all the gaps of the electronic device, but also consumes longer time, resulting in lower packaging quality and packaging efficiency.
Therefore, the electronic device packaging structure capable of eliminating all air bubbles has not made a great breakthrough all the time, greatly limits the packaging effect and packaging efficiency of the electronic device packaging structure, and hinders the rapid development of the electronic device packaging technology.
Disclosure of Invention
It is a primary object of the present application to overcome at least one of the above-mentioned drawbacks of the prior art and to provide an electronic device package structure and a method for manufacturing the same, which can rapidly eliminate all air bubbles and fill all gaps of the electronic device.
In order to achieve the purpose, the following technical scheme is adopted in the application:
according to an aspect of the present application, there is provided an electronic device package structure, including a substrate, a first electronic device, a first electrode, a second electronic device, a second electrode, and a filling material, wherein the first electrode is disposed between the first electronic device and an upper surface of the substrate, and is used for electrically connecting the first electronic device and the substrate and forming a first gap between the first electronic device and the upper surface of the substrate, the second electrode is disposed between the second electronic device and the upper surface of the substrate, and is used for electrically connecting the second electronic device and the substrate and forming a second gap between the second electronic device and the upper surface of the substrate, and at least one vacuum flow channel is disposed at a front projection of the first electronic device on the substrate, and penetrates through the substrate; and when the vacuum flow channel generates negative pressure above the substrate, the filling material breaks through the isolation film and is sucked into the first gap.
According to an embodiment of the present application, the number of the vacuum flow channels is 1, and the vacuum flow channels are disposed at a projection midpoint of the first electronic device on the substrate.
According to an embodiment of the present application, there is a non-overlapping region between an orthogonal projection of the first electronic device on the substrate and an orthogonal projection of the first electrode on the substrate, and at least one auxiliary vacuum flow channel is further provided at an edge of the non-overlapping region in the first gap.
According to an embodiment of the present application, the at least one vacuum flow channel has a tapered shape, and a cross-sectional area of the vacuum flow channel at the upper surface of the substrate is larger than a cross-sectional area of the vacuum flow channel at the lower surface of the substrate.
According to an embodiment of the present application, an end of the at least one vacuum flow channel near the upper surface of the substrate is provided with a chamfer.
According to an embodiment of the present application, the at least one vacuum flow passage is a segmented stepped through hole, the central longitudinal axes of the through holes of the segments being non-concentric.
According to an embodiment of the present application, the at least one vacuum flow channel is a zigzag shape, and an included angle between a partial gas flow direction and the length direction of the substrate is greater than or equal to 0 degree and less than 90 degrees.
According to an embodiment of the present application, the inner surface of the vacuum flow channel is coated with a thermally conductive carbon film and/or a metal film.
According to an embodiment of the application, an air inlet channel is arranged at the orthographic projection of the second electronic device on the substrate.
According to an embodiment of the present application, an insulating support is further disposed between the isolation film and the second electrode, and the insulating support is located on an upper surface of the substrate for position-defining the second electrode.
According to an embodiment of the present application, the filling material includes a first filling material layer close to the first electronic device, a third filling material layer far from the first electronic device, and a second filling material layer between the first filling material layer and the third filling material layer, the first filling material layer has better fluidity than the second filling material layer and the third filling material layer, and the third filling material layer is a metal layer.
According to another aspect of the present application, there is provided a method for manufacturing an electronic device package structure, including the steps of:
arranging a first electronic device and a second electronic device on the upper surface of a substrate, wherein a first electrode is positioned between the first electronic device and the substrate so as to form a first gap between the first electronic device and the substrate, and a second electrode is positioned between the second electronic device and the substrate so as to form a second gap between the second electronic device and the substrate;
covering the first electronic device and the second electronic device with an isolating film on the outer sides far away from the substrate;
configuring the filling material to cover the isolation film with the filling material;
the first electronic device is provided with at least one vacuum flow channel at the orthographic projection position on the substrate, the filling material breaks through the isolation film and is sucked into the first gap by utilizing the vacuum flow channel for vacuumizing, and the vacuum flow channel penetrates through the substrate.
According to an embodiment of the present application, configuring the filling material to cover the isolation film includes: and preparing a solid filling material, integrally covering the isolation film, wherein the film covering pressure is 0.1-1MPa, and the film covering temperature is 50-150 ℃.
According to an embodiment of the present application, configuring the filling material such that the filling material covers the isolation film includes: the filling materials are sequentially arranged along the length direction of the substrate.
According to an embodiment of the present application, the method further includes disposing the filling material to cover the isolation film; and laminating the upper surface of the filling material along the length direction of the substrate by using pressure, so that the filling material is filled downwards along the external outline of the first electronic device.
According to the technical scheme, the electronic device packaging structure and the manufacturing method have the advantages and positive effects that:
the electronic device packaging structure comprises a substrate, a first electronic device, a first electrode, a second electronic device, a second electrode and a filling material, wherein the first electrode is arranged between the first electronic device and the upper surface of the substrate and used for electrically connecting the first electronic device with the substrate, a first gap is formed between the first electronic device and the upper surface of the substrate, the second electrode is arranged between the second electronic device and the upper surface of the substrate and used for electrically connecting the second electronic device with the substrate, a second gap is formed between the second electronic device and the upper surface of the substrate, at least one vacuum flow channel is arranged at the orthographic projection position of the first electronic device on the substrate, and the at least one vacuum flow channel penetrates through the upper surface and the lower surface of the substrate; the vacuum runner is communicated with the first gap and can vacuumize the first gap. And isolation films are arranged on the outer sides of the first electronic device and the second electronic device, which are far away from the substrate, and are used for isolating the filling material from the first gap and the second gap, and when the vacuum flow channel enables negative pressure to be generated above the substrate, the filling material breaks through the isolation films to fill the first gap. By adopting the design, the first gap can be filled with the filling material in a negative pressure state, all bubbles are eliminated when the filling material is filled, all gaps of the electronic device can be filled, the packaging time is short, the packaging efficiency is high, the production efficiency can be improved, and the production cost is reduced.
Drawings
The above and other features and advantages of the present application will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
Fig. 1 is a schematic structural diagram of an electronic device package structure of the present application before being packaged.
Fig. 2 is a schematic structural diagram of the electronic device packaging structure according to the present application after packaging.
Fig. 3 is a schematic structural view of another embodiment of the electronic device package structure of the present application before being packaged.
Fig. 4 is a schematic structure diagram of an electronic device package structure according to another embodiment of the present application after packaging.
Wherein the reference numerals are as follows:
100-electronic device package structure;
101-a substrate;
102-a first electronic device;
103-a first electrode;
104-a second electronic device;
105-a second electrode;
106-a filler material;
107-first gap;
108-a second gap;
109-vacuum flow channel;
110-a barrier film;
111-a roll-in component;
112-a thermally conductive carbon film and/or a metal film;
301-inlet flow channel;
302-an insulating support;
a-vacuumizing direction;
b-air inlet direction;
d-rolling direction.
Detailed Description
Exemplary embodiments that embody the features and advantages of the present application are described in detail below. It is to be understood that the present application is capable of various modifications in various embodiments without departing from the scope of the application, and that the description and drawings are to be taken as illustrative and not restrictive in character.
In the following description of various exemplary embodiments of the present application, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration various exemplary structures, systems, and steps in which aspects of the application may be practiced. It is to be understood that other specific arrangements of parts, structures, example devices, systems, and steps may be utilized and structural and functional modifications may be made without departing from the scope of the present application. Moreover, although the terms "upper", "intermediate", "inner", and the like may be used in this specification to describe various example features and elements of the application, these terms are used herein for convenience only, e.g., in accordance with the orientation of the examples described in the figures. Nothing in this specification should be construed as requiring a specific three dimensional orientation of structures in order to fall within the scope of this application.
In order to make the aforementioned objects, features and advantages of the present application comprehensible, specific embodiments accompanied with figures are described in detail below.
As shown in fig. 1 to 2, the electronic device package structure 100 of the present application includes a substrate 101, a first electronic device 102, a first electrode 103, a second electronic device 104, a second electrode 105, and a filling material 106, wherein the first electrode 103 is disposed between the first electronic device 102 and an upper surface of the substrate 101, and is used for electrically connecting the first electronic device 102 and the substrate 101 and forming a first gap 107 between the first electronic device 102 and the upper surface of the substrate 101, and the second electrode 105 is disposed between the second electronic device 104 and the upper surface of the substrate 101, and is used for electrically connecting the second electronic device 104 and the substrate 101 and forming a second gap 108 between the second electronic device 104 and the upper surface of the substrate 101.
At least one vacuum flow channel 109 is arranged at the orthographic projection position of the first electronic device 102 on the substrate 101, and the at least one vacuum flow channel 109 penetrates through the upper surface and the lower surface of the substrate 101; the arrangement of the vacuum flow channel enables the inside and the outside of the first gap to form air pressure difference, and filling materials can conveniently enter the first gap. An isolation film 110 is disposed on the outer sides of the first electronic component 102 and the second electronic component 104 away from the substrate 101 for isolating the filler 106 from the first gap 107 and the second gap 108, and is typically made of a thin epoxy resin, polyimide, or other thin organic polymer material. The isolation film is used in cooperation with the vacuum flow channel, and the configuration of the isolation film enables the filling material not to enter the first gap and the second gap under normal conditions. When the vacuum channel 109 acts to generate a negative pressure above the substrate 101, the filling material 106 breaks through the isolation film 110 and is sucked into the first gap 107. When the vacuum flow channel is vacuumized, the isolation film is thin, so that the filling material can break through the isolation film under the action of negative pressure and enter the first gap, and the filling material cannot enter the second gap due to the fact that no negative pressure exists in the second gap.
In this embodiment, the filling material is a single layer, and when the filling material is a single layer, the filling material can break the isolation film and immerse the isolation film into the first gap under the action of the negative pressure provided by the vacuum flow channel.
It should be noted that the vacuum flow channel can be prepared in various forms, and the preferred form includes THG laser processing. THG laser, third Harmonic Generation triple frequency laser, can form a through hole with a diameter of about 10 μm as a vacuum flow channel on a substrate at a wavelength of 355nm or more, and remove the laser processing residue by oxygen ashing.
In this embodiment, the number of the vacuum channels 109 is 1, and the vacuum channels are disposed at the center of the projection of the first electronic device 102 on the substrate 101. The arrangement at the center makes the action of the negative pressure in any direction the same, thereby ensuring the uniformity of filling of the filling material.
In the present embodiment, there is a non-overlapping region between the orthographic projection of the first electronic device 102 on the substrate 101 and the orthographic projection of the first electrode 103 on the substrate 101, and at least one auxiliary vacuum flow channel is further provided at the edge of the non-overlapping region within the first gap 107. The auxiliary vacuum channels may be disposed at an edge adjacent to each of the first electrodes. The filling material enters the first gap from the gap between two adjacent first electrodes, and the filling material is pressed in, so that the filling material cannot be fully filled at some corner positions in the first gap, and the vacuum flow channel is arranged at the edge, so that the filling material can better fill the corner gap.
In this embodiment, at least one of the vacuum channels 109 is tapered, and the cross-sectional area of the vacuum channel 109 at the upper surface of the substrate 101 is larger than the cross-sectional area of the vacuum channel 109 at the lower surface of the substrate 101. The vacuum flow channel is in an inverted cone shape, and the inverted cone shape is more friendly to gas flow or liquid flow. Due to the action of negative pressure, part of the filling material can be sucked into the vacuum flow channel, and the inverted cone can better prevent the filling material from overflowing the port of the vacuum flow channel.
In this embodiment, at least one of the vacuum channels 109 is chamfered near the top surface of the substrate 101. By providing a chamfer on the upper surface, the stress on the via and the fill material is reduced there, thereby reducing the likelihood of separation between the two substances.
In this embodiment, at least one vacuum flow passage 109 is a stepped through-hole having sections that are non-concentric about their central longitudinal axes. The stepped arrangement makes the flow path of the filler material relatively tortuous and complex after being drawn into the vacuum flow passage, thereby reducing the likelihood of the filler material overflowing the vacuum flow passage port.
In this embodiment, at least one of the vacuum channels 109 is a polygonal line, and an included angle between the gas flowing direction and the length direction of the substrate 101 of the vacuum channel part is greater than or equal to 0 degree and less than 90 degrees. At least one section of the zigzag-shaped vacuum flow channel is parallel to the length direction of the substrate or inclines upwards, and under the condition of upward inclination, if the filling material wants to flow through the section, the gravity action of the filling material needs to be overcome, and the possibility that the filling material overflows from the vacuum flow channel port is also reduced.
In the present embodiment, the inner surface of the vacuum flow channel 109 is coated with a thermally conductive carbon film and/or a metal film 112. The inner surface of the vacuum runner is coated with the heat-conducting carbon film, the pressure and the temperature are in positive correlation, and the heat conduction of the heat-conducting carbon film further reduces the pressure inside the first gap, so that the filling material can be sucked in conveniently. The metal film can improve the gas fluidity inside because of its better surface roughness. In addition, since the substrate has a multilayer structure, electrical conduction between layers is required, and electrical conduction between layers can be realized by providing a metal layer.
The heat-conducting carbon film can be a graphene-polyimide composite film, and the mechanical and thermal properties of the polyimide composite film can be improved by adding the inorganic filler into the polyimide composite film, and meanwhile, the heat-conducting property is further improved.
As shown in fig. 3 to 4, in other embodiments, an air inlet channel 301 is provided at the orthographic projection of the second electronic device 104 on the substrate 101. An air inlet channel is arranged at the orthographic projection of the (saw) on the substrate, the second electronic device needs a gap below the second electronic device because the gas is used as a medium for transmitting converted sound waves or free space is needed to allow the oscillation of the piezoelectric element, and the air pressure in the second gap is enhanced by arranging the air inlet channel, so that the filling material is prevented from entering the second gap.
Further, an isolation film covers the outer side of the second electronic device and is used for blocking the filling material from entering the second gap. The isolation film is generally made of thin epoxy resin, polyimide or other thin organic high polymer materials, an external filling material covers the isolation film to form a first pressure P1 for the isolation film, air is injected into the internal air inlet flow channel to enable internal air to form a second pressure P2 for the isolation film, and the filling material is prevented from entering a second gap on the premise of reducing the deformation of the isolation film as much as possible by adjusting the balance between the P1 and the P2.
In the present embodiment, an insulating support 302 is further disposed between the isolation film 110 and the second electrode 105, and the insulating support 302 is located on the upper surface of the substrate 101 for position-defining the second electrode 105. The strength of the isolation film of the second electrode can be enhanced by the arrangement of the insulating support piece, and the filling material is prevented from entering the second gap.
It should be noted that the height of the insulating support is between the bottom height H1 and the top height H2 of the solder ball in the second electrode, so that the filling material can be prevented from breaking the isolation film and entering the second gap, and the insulating support can reduce the problem that the side face of the isolation film is prevented from being inwards concave due to external pressure, thereby avoiding the contact with the solder ball in the second electrode, displacing the solder ball and even dropping the solder ball from the electrode pad, and improving the product yield.
In the present embodiment, the filling material 106 includes a first filling material layer 1061 close to the first electronic device 102, a third filling material layer 1063 far from the first electronic device 102, and a second filling material layer 1062 located between the first filling material layer 1061 and the third filling material layer 1063, the first filling material layer 1061 has better flowability than the second filling material layer 1062 and the third filling material layer 1063, and the third filling material layer 1063 is a metal layer. The first filler material layer may be impregnated into the first gap. The second filling material layer can play the role of protecting the device, or the metal element is added to play a role of heat conduction, so that the problem that the electronic device cannot be diffused due to a large amount of heat generated inside during working is avoided. The third filling material layer can be a metal layer, has heat conduction and shielding effects, and avoids mutual influence between the electronic device and external environment signals.
It should be noted herein that the electronic device package structures illustrated in the drawings and described in the present specification are only a few examples of the many types of electronic device package structures that can employ the principles of the present application. It should be clearly understood that the principles of this application are in no way limited to any of the details of the electronic device package structure or any of the components of the electronic device package structure shown in the drawings or described in this specification.
The foregoing is a detailed description of several exemplary embodiments of the electronic device package structure presented herein, and the following is an exemplary description of the use of the electronic device package structure presented herein.
With reference to fig. 1 to 4, in a use process of the electronic device package structure provided by the present application, a first electronic device and a second electronic device are disposed on an upper surface of a substrate, a first gap is formed between the first electronic device and the substrate, a second gap is formed between the second electronic device and the substrate, an isolation film is covered on an outer side of the first electronic device and an outer side of the second electronic device, which are away from the substrate, a filling material is disposed on the isolation film, and the filling material is covered by pressure. For the second gap, the filling material can not break the isolation film and fill the second gap due to the absence of the vacuum flow channel or the presence of the air inlet flow channel and the insulating support.
The above is a description of a process of using the electronic device package structure proposed in the present application, and a method of manufacturing the electronic device package structure proposed in the present application will be exemplarily described below.
With reference to fig. 1 to 4, the method for manufacturing the electronic device package structure provided by the present application includes the following steps:
arranging a first electronic device 102 and a second electronic device 104 on the upper surface of a substrate 101, wherein a first electrode 103 is positioned between the first electronic device 102 and the substrate 101, so that a first gap 107 is formed between the first electronic device 102 and the substrate 101, and a second electrode 105 is positioned between the second electronic device 104 and the substrate 101, so that a second gap 108 is formed between the second electronic device 104 and the substrate 101;
covering the first electronic device 102 and the second electronic device 104 with the isolation film 110 on the outer sides far away from the substrate 101;
filling material 106 is configured, so that the filling material 106 covers the isolation film 110;
the first electronic device 102 is provided with at least one vacuum flow channel 109 at the orthographic projection position on the substrate 101, and the filling material 106 breaks the isolation film 110 and is sucked into the first gap 107 by utilizing the vacuum flow channel 109 for vacuum pumping, wherein the vacuum flow channel 109 penetrates through the upper surface and the lower surface of the substrate 101.
In this embodiment, the step of disposing the filling material 106 to cover the isolation film 110 with the filling material 106 includes: and (3) preparing the solid filling material 106, and integrally covering the filling material 106 on the isolating membrane, wherein the membrane covering pressure is 0.1-1MPa, and the membrane covering temperature is 50-150 ℃. The solid filling material is integrally flaky, is adsorbed by an external filling device and directly and integrally covers the isolation film.
In this embodiment, the step of disposing the filling material 106 to cover the isolation film 110 with the filling material 106 includes: the filler 106 is sequentially disposed along the longitudinal direction of the substrate 101. For example from left to right, in such a way that the electronic device can push out air bubbles from left to right when filling with material, such as air bubbles generated inside. For this case, the filler material may be in solid or liquid form.
In this embodiment, after the filling material 106 is configured to cover the isolation film 110 with the filling material 106, the method further includes; the upper surface of the filler 106 is coated in the longitudinal direction of the substrate 101 by pressure, and the filler 106 is filled down along the outer contour of the first electronic component 102, whereby air bubbles can be pushed out. The pressure coating may be performed by rolling the upper surface of the filler 106 along the longitudinal direction of the substrate 101 by using a rolling member 111, or may be performed by a vacuum or pressure coating method as a whole.
For a further understanding of the content of the present application, reference will now be made in detail to the present application with reference to specific embodiments. It should be noted that, for reasons of space, only some of the following embodiments are described, and the various parameters of the manufacturing method and the like are not limited to the specific embodiments described below.
Example one
Arranging a first electronic device 102 and a second electronic device 104 on the upper surface of a substrate 101, wherein a first electrode 103 is positioned between the first electronic device 102 and the substrate 101, so that a first gap 107 is formed between the first electronic device 102 and the substrate 101, and a second electrode 105 is positioned between the second electronic device 104 and the substrate 101, so that a second gap 108 is formed between the second electronic device 104 and the substrate 101; the isolation film 110 covers the outer sides of the first electronic device 102 and the second electronic device 104 away from the substrate 101.
Filling material 106 is configured, so that the filling material 106 covers the isolation film 110; the filling material 106 is a single layer, the filling material is a liquid filling material, the laminating pressure is 1MPa, and the laminating temperature is 150 ℃.
The first electronic device 102 is provided with at least one vacuum flow channel 109 at the orthographic projection position on the substrate 101, and the filling material 106 breaks the isolation film 110 and is sucked into the first gap 107 by using the vacuum flow channel 109 to vacuumize, wherein the vacuum flow channel 109 penetrates through the upper surface and the lower surface of the substrate 101.
The upper surface of the filling material 106 is rolled along the length direction of the substrate 101 by the rolling member 111, so that the filling material 106 is filled down along the outer contour of the first electronic component 102.
Example two
Arranging a first electronic device 102 and a second electronic device 104 on the upper surface of a substrate 101, wherein a first electrode 103 is positioned between the first electronic device 102 and the substrate 101, so that a first gap 107 is formed between the first electronic device 102 and the substrate 101, and a second electrode 105 is positioned between the second electronic device 104 and the substrate 101, so that a second gap 108 is formed between the second electronic device 104 and the substrate 101; the isolation film 110 covers the outer sides of the first electronic device 102 and the second electronic device 104 far from the substrate 101.
Filling material 106 is configured to cover the isolation film 110 with the filling material 106; the filling material 106 is a single layer, the filling material is a solid filling material, the film coating pressure is 0.5MPa, and the film coating temperature is 70 ℃.
The first electronic device 102 is provided with at least one vacuum flow channel 109 at the orthographic projection position on the substrate 101, and the filling material 106 breaks the isolation film 110 and is sucked into the first gap 107 by utilizing the vacuum flow channel 109 for vacuum pumping, wherein the vacuum flow channel 109 penetrates through the upper surface and the lower surface of the substrate 101.
The upper surface of the filling material 106 is rolled along the length direction of the substrate 101 by the rolling member 111, so that the filling material 106 is filled down along the outer contour of the first electronic component 102.
EXAMPLE III
Arranging a first electronic device 102 and a second electronic device 104 on the upper surface of a substrate 101, wherein a first electrode 103 is positioned between the first electronic device 102 and the substrate 101, so that a first gap 107 is formed between the first electronic device 102 and the substrate 101, and a second electrode 105 is positioned between the second electronic device 104 and the substrate 101, so that a second gap 108 is formed between the second electronic device 104 and the substrate 101; the isolation film 110 covers the outer sides of the first electronic device 102 and the second electronic device 104 away from the substrate 101.
Filling material 106 is configured, so that the filling material 106 covers the isolation film 110; the filling material 106 is three layers, the filling material is a solid filling material, the film covering pressure is 0.3MPa, and the film covering temperature is 80 ℃.
The first electronic device 102 is provided with at least one vacuum flow channel 109 at the orthographic projection position on the substrate 101, and the filling material 106 breaks the isolation film 110 and is sucked into the first gap 107 by using the vacuum flow channel 109 to vacuumize, wherein the vacuum flow channel 109 penetrates through the upper surface and the lower surface of the substrate 101.
The upper surface of the filling material 106 is rolled along the length direction of the substrate 101 by the rolling member 111, so that the filling material 106 is filled down along the outer contour of the first electronic component 102.
Example four
Arranging a first electronic device 102 and a second electronic device 104 on the upper surface of a substrate 101, wherein a first electrode 103 is positioned between the first electronic device 102 and the substrate 101, so that a first gap 107 is formed between the first electronic device 102 and the substrate 101, and a second electrode 105 is positioned between the second electronic device 104 and the substrate 101, so that a second gap 108 is formed between the second electronic device 104 and the substrate 101; the isolation film 110 covers the outer sides of the first electronic device 102 and the second electronic device 104 away from the substrate 101.
Filling material 106 is configured, so that the filling material 106 covers the isolation film 110; the filling material 106 is three layers, the filling material is a solid filling material, the film covering pressure is 1MPa, and the film covering temperature is 150 ℃.
The first electronic device 102 is provided with at least one vacuum flow channel 109 at the orthographic projection position on the substrate 101, and the filling material 106 breaks the isolation film 110 and is sucked into the first gap 107 by utilizing the vacuum flow channel 109 for vacuum pumping, wherein the vacuum flow channel 109 penetrates through the upper surface and the lower surface of the substrate 101.
The upper surface of the filling material 106 is rolled along the length direction of the substrate 101 by the rolling member 111, so that the filling material 106 is filled down along the outer contour of the first electronic component 102.
Through the use process and the manufacturing method of the electronic device packaging structure, the electronic device packaging structure can be obtained, and the electronic device packaging structure comprises a substrate, a first electronic device, a first electrode, a second electronic device, a second electrode and a filling material, wherein the first electrode is arranged between the first electronic device and the upper surface of the substrate and used for electrically connecting the first electronic device and the substrate, a first gap is formed between the first electronic device and the upper surface of the substrate, the second electrode is arranged between the second electronic device and the upper surface of the substrate and used for electrically connecting the second electronic device and the substrate, a second gap is formed between the second electronic device and the upper surface of the substrate, at least one vacuum flow channel is arranged at the orthographic projection position of the first electronic device on the substrate, and the at least one vacuum flow channel penetrates through the upper surface and the lower surface of the substrate; the vacuum runner is communicated with the first gap and can vacuumize the first gap. And when the vacuum flow channel generates negative pressure above the substrate, the filling material breaks through the isolation film to fill the first gap. By adopting the design, the first gap can be filled with the filling material under the negative pressure state, all bubbles are eliminated when the filling material is filled, all gaps of the electronic device can be filled, the packaging time is short, the packaging efficiency is high, the production efficiency can be improved, and the production cost is reduced.
In summary, the electronic device package structure provided by the present application includes a substrate, a first electronic device, a first electrode, a second electronic device, a second electrode, and a filling material, where the first electrode is disposed between the first electronic device and an upper surface of the substrate, and is used to electrically connect the first electronic device and the substrate, and form a first gap between the first electronic device and the upper surface of the substrate, the second electrode is disposed between the second electronic device and the upper surface of the substrate, and is used to electrically connect the second electronic device and the substrate, and form a second gap between the second electronic device and the upper surface of the substrate, at least one vacuum flow channel is disposed at an orthographic projection of the first electronic device on the substrate, and the at least one vacuum flow channel penetrates through the upper surface and the lower surface of the substrate; the vacuum runner is communicated with the first gap and can vacuumize the first gap. And when the film is coated and the first gap is vacuumized through the vacuum flow channel, the first gap generates negative pressure, and the filling material breaks through the isolation film to fill the inside of the first gap. The first gap can be filled with the filling material under the negative pressure state, all bubbles can be eliminated when the filling material is filled, all gaps of the electronic device can be filled, the packaging time is short, the packaging efficiency is high, the quality of the electronic device packaging structure is good, the defects of the bubbles or the gaps do not exist, the production efficiency and the production capacity are improved, and the requirement of the market on the high-quality electronic device packaging structure is met.
According to the manufacturing method of the electronic device packaging structure, the first electronic device and the second electronic device are arranged on the upper surface of the substrate, the first electrode is located between the first electronic device and the substrate, so that a first gap is formed between the first electronic device and the substrate, and the second electrode is located between the second electronic device and the substrate, so that a second gap is formed between the second electronic device and the substrate; covering the isolating film on the outer sides of the first electronic device and the second electronic device far away from the substrate; filling materials are configured to cover the isolation film; the orthographic projection of the first electronic device on the substrate is provided with at least one vacuum flow channel, the filling material breaks through the isolation film and is sucked into the first gap by utilizing the vacuum flow channel for vacuumizing, and the vacuum flow channel penetrates through the upper surface and the lower surface of the substrate. The packaging structure is beneficial to improving the quality of the electronic device packaging structure, improving the production efficiency and reducing the cost.
Exemplary embodiments of the electronic device package structure and method of fabrication set forth herein are described and/or illustrated in detail above. The embodiments of the application are not limited to the specific embodiments described herein, but rather, components and/or steps of each embodiment may be utilized independently and separately from other components and/or steps described herein. Each component and/or step of one embodiment can also be used in combination with other components and/or steps of other embodiments. When introducing elements/components/etc. described and/or illustrated herein, the articles "a," "an," "first," "second," and "the above," etc. are intended to mean that there are one or more of the elements/components/etc. The terms "comprising," "including," and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.
Embodiments of the present application are not limited to the specific embodiments described herein, but rather, components of each embodiment may be utilized independently and separately from other components described herein. Each component of one embodiment can also be used in combination with other components of other embodiments. In the description herein, reference to the term "one embodiment," "some embodiments," "other embodiments," or the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only a preferred embodiment of the application example, and is not intended to limit the application example, and various modifications and changes may be made to the application example by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the applied embodiment shall be included in the protection scope of the applied embodiment.
Claims (15)
1. An encapsulation structure of an electronic device, comprising a substrate, a first electronic device, a first electrode, a second electronic device, a second electrode and a filling material, wherein the first electrode is arranged between the first electronic device and the upper surface of the substrate and is used for electrically connecting the first electronic device with the substrate, a first gap is formed between the first electronic device and the upper surface of the substrate, the second electrode is arranged between the second electronic device and the upper surface of the substrate and is used for electrically connecting the second electronic device with the substrate, and a second gap is formed between the second electronic device and the upper surface of the substrate,
at least one vacuum flow channel is arranged on the substrate at the orthographic projection position of the first electronic device, and the at least one vacuum flow channel penetrates through the upper surface and the lower surface of the substrate;
and isolation films are arranged on the outer sides of the first electronic device and the second electronic device and used for isolating the filling material from the first gap and the second gap, and when negative pressure is generated above the substrate, the filling material breaks through the isolation films and is sucked into the first gap.
2. The electronic device package structure according to claim 1, wherein the number of the vacuum flow channels is 1, and the vacuum flow channels are disposed in a center of the substrate in an orthographic projection of the first electronic device.
3. The electronic device package structure according to claim 2, wherein a non-overlapping region exists between an orthogonal projection of the first electronic device on the substrate and an orthogonal projection of the first electrode on the substrate, and at least one auxiliary vacuum flow channel is provided at an edge of the non-overlapping region in the first gap.
4. The electronic device package structure of claim 1, wherein the at least one vacuum flow channel is tapered, and a cross-sectional area of the vacuum flow channel at an upper surface of the substrate is larger than a cross-sectional area of the vacuum flow channel at a lower surface of the substrate.
5. The electronic device package structure of claim 1, wherein an end of the at least one vacuum flow channel near the upper surface of the substrate is chamfered.
6. The electronic device package structure of claim 1, wherein the at least one vacuum flow channel is a segmented stepped through hole, the central longitudinal axes of the through holes being non-concentric.
7. The package structure of an electronic device according to claim 1, wherein the at least one vacuum flow channel is a polygonal line, and an included angle between the vacuum flow channel and the length direction of the substrate along the gas flowing direction is greater than or equal to 0 degree and less than 90 degrees.
8. The electronic device package structure according to claim 1, wherein an inner surface of the vacuum flow channel is coated with a thermally conductive carbon film and/or a metal film.
9. The electronic device package structure according to claim 1, wherein an inlet flow channel is provided at an orthographic projection of the second electronic device on the substrate.
10. The packaging structure of electronic device according to claim 1, wherein an insulating support is further disposed between the isolation film and the second electrode, the insulating support being located on the upper surface of the substrate for position-defining the second electrode.
11. The electronic device package structure according to claim 1, wherein the filling material comprises a first filling material layer close to the first electronic device, a third filling material layer far from the first electronic device, and a second filling material layer between the first filling material layer and the third filling material layer, the first filling material layer has better fluidity than the second filling material layer and the third filling material layer, and the third filling material layer is a metal layer.
12. A manufacturing method of an electronic device packaging structure is characterized by comprising the following steps:
arranging a first electronic device and a second electronic device on the upper surface of a substrate, wherein a first electrode is positioned between the first electronic device and the substrate, so that a first gap is formed between the first electronic device and the substrate, and a second electrode is positioned between the second electronic device and the substrate, so that a second gap is formed between the second electronic device and the substrate;
covering the first electronic device and the second electronic device with an isolating film on the outer sides far away from the substrate;
filling materials are configured to cover the isolation film;
the orthographic projection of the first electronic device on the substrate is provided with at least one vacuum flow channel, the filling material breaks through the isolation film and is sucked into the first gap by utilizing the vacuum flow channel for vacuumizing, and the vacuum flow channel penetrates through the upper surface and the lower surface of the substrate.
13. The method of claim 12, wherein disposing the filling material to cover the isolation film comprises:
and (3) preparing a solid filling material, and integrally covering the filling material on the isolating membrane, wherein the membrane covering pressure is 0.1-1MPa, and the membrane covering temperature is 50-150 ℃.
14. The method of claim 12, wherein the disposing the filling material to cover the isolation film comprises:
the filling materials are sequentially arranged along the length direction of the substrate.
15. The method of manufacturing an electronic device package structure according to claim 12, wherein the filling material is disposed so as to cover the isolation film, and the method further comprises;
and laminating the upper surface of the filling material along the length direction of the substrate by using pressure, so that the filling material is filled downwards along the external outline of the first electronic device.
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