KR102344896B1 - Method of forming underfill, method of manufacturing semiconductor package using the same, and release film for underfill process - Google Patents

Abstract

The present invention provides a method of forming an underfill capable of significantly improving process efficiency by preventing a mold from being polluted during an under fill process, a method of manufacturing a semiconductor package using the same, and a release film for an underfill process. The method of forming an underfill comprises: providing a device structure including a circuit board having at lease one vent hole, a plurality of semiconductor devices mounted on the circuit board, and a plurality of electric connection members disposed between the circuit board and the plurality of semiconductor devices; arranging a first release film on a first mold member having a plurality of suction holes; arranging the device structure on the release film so that the circuit board faces the first release film; forming a plurality of ventilation holes at a position corresponding to the plurality of suction holes of the first release film by applying first suction pressure to the plurality of suction holes; and filling an underfill material between and around the plurality of electric connection members while sucking gas above the first release film through the plurality of suction holes and the plurality of ventilation holes by applying second suction pressure to the plurality of suction holes.

Description

Method of forming underfill, method of manufacturing semiconductor package using the same, and release film for underfill process

The present invention relates to a semiconductor process and a method for manufacturing a semiconductor package, and more particularly, to a method for forming an underfill and a method for manufacturing a semiconductor package to which the same is applied.

In the packaging process of a semiconductor device, a molding process is a process of encapsulating a chip and a carrier substrate on which the chip is mounted with a molding material. A mold molding apparatus is used to encapsulate a semiconductor device, and an epoxy molding compound (EMC) in which an inorganic material and various auxiliary materials are added to a mold resin such as an epoxy resin is mainly used as a molding material. A molding material including the mold resin is injected into a mold mold to form a mold.

The underfill process is a process in which an insulating resin is used to fill a lower portion of a device in a semiconductor package such as a ball grid array (BGA), a chip scale package (CSP), or a flip chip. The underfill serves to correct the mismatch in the coefficient of thermal expansion (CTE) between the printed circuit board and the semiconductor device, and also serves to prevent or minimize the effects of physical shock, chemical shock, and moisture. can In addition, the underfill may have a function of dissipating heat generated in the semiconductor device, that is, a heat dissipation function. Such an underfill process is one of the important technical elements in semiconductor packaging.

In a general underfill process, there may occur a problem that the resin material for underfill flows out to the surface portion of the mold device (ie, the mold) to contaminate the mold device. Therefore, after performing the underfill process, in order to perform the next underfill process, it is necessary to perform a cleaning operation on the mold apparatus. This lowers the process efficiency and becomes a factor to reduce the packaging throughput. In addition, when the substrate on which the semiconductor device is mounted is loaded onto a high-temperature mold apparatus, the substrate is deformed to be convex downward (that is, in a U-shape) due to a difference in coefficient of thermal expansion (CTE) between the substrate and the semiconductor device. There is a problem that occurs, and thus, there is a problem that workability is deteriorated. Accordingly, there is a need to develop a technology capable of overcoming the problems of the conventional underfill process.

An object of the present invention is to provide a method of forming an underfill capable of significantly improving process efficiency by preventing a problem of contamination of a mold device (ie, a mold) during an underfill process, and a method of manufacturing a semiconductor package to which the same is applied.

In addition, the technical problem to be achieved by the present invention is to provide a method of forming an underfill capable of solving a problem of deterioration in workability due to substrate deformation on a mold apparatus (ie, a mold) during an underfill process, and a method of manufacturing a semiconductor package to which the same is applied.

The problem to be solved by the present invention is not limited to the problems mentioned above, and other problems not mentioned will be understood by those skilled in the art from the following description.

According to an embodiment of the present invention, a circuit board having at least one vent hole, a plurality of semiconductor device parts mounted on the circuit board, and a plurality of semiconductor device parts disposed between the circuit board and the plurality of semiconductor device parts providing a device structure including a plurality of electrical connection members; disposing a first release film on a first mold member having a plurality of suction holes; disposing the device structure on the first release film, and disposing the device structure so that the circuit board faces the first release film; forming a plurality of ventilation holes at positions corresponding to the plurality of suction holes of the first release film by applying a first suction pressure to the plurality of suction holes; and applying a second suction pressure to the plurality of suction holes to suck the gas above the first release film through the plurality of suction holes and the plurality of ventilation holes while underfilling between and around the plurality of electrical connection members A method of forming an underfill comprising the step of filling an underfill material is provided.

The first release film may be a thermosetting polymer film.

The first release film may be a thermosetting polyurethane-based polymer film.

The first release film may have a thickness in the range of about 15 μm to 60 μm.

The first suction pressure may be in the range of about 20 KPa to 90 KPa.

In the forming of the plurality of ventilation holes, the temperature of the first mold member may be in a range of about 50°C to 250°C.

The plurality of ventilation holes may have a diameter in the range of about 0.05 mm to about 8 mm.

The first mold member may include a first support pin portion disposed on a first edge region and a second support pin portion disposed on a second edge region, and the first release film may be positioned corresponding to the first support pin portion. and a second through-hole formed at a position corresponding to the first through-hole and the second support pin portion, wherein in the step of disposing the first release film on the first mold member, the first through-hole The first support pin part may be inserted into the , and the second support pin part may be inserted into the second through hole.

In the filling of the underfill material, a portion of the underfill material may pass through the vent hole of the circuit board to contact the upper surface of the first release film.

Before the filling of the underfill material, a second mold member facing the first mold member may be disposed on the device structure. The second mold member may be disposed with a second release film interposed between the second mold member and the device structure. After disposing the second mold member, the filling of the underfill material may be performed through a molded underfill (MUF) process.

According to another embodiment of the present invention, as a method of manufacturing a semiconductor package, a circuit board having at least one vent hole, a plurality of semiconductor device units mounted on the circuit board, and the circuit board and the plurality of providing a device structure including a plurality of electrical connection members disposed between the semiconductor device parts; disposing a first release film on a first mold member having a plurality of suction holes; disposing the device structure on the first release film, and disposing the device structure so that the circuit board faces the first release film; forming a plurality of ventilation holes at positions corresponding to the plurality of suction holes of the first release film by applying a first suction pressure to the plurality of suction holes; An underfill material between and around the plurality of electrical connection members while suctioning gas above the first release film through the plurality of suction holes and the plurality of ventilation holes by applying a second suction pressure to the plurality of suction holes filling the separating the device structure on which the underfill material is formed from the first mold member and the first release film; and dividing the device structure into a plurality of unit devices.

The first release film may be a thermosetting polymer film.

The first release film may be a thermosetting polyurethane-based polymer film.

The first release film may have a thickness in the range of about 15 μm to 60 μm.

The first suction pressure may be in the range of about 20 KPa to 90 KPa.

In the forming of the plurality of vent holes, the temperature of the first mold member may be in a range of about 50°C to 250°C.

The plurality of ventilation holes may have a diameter in the range of about 0.05 mm to about 8 mm.

The first mold member may include a first support pin portion disposed on a first edge region and a second support pin portion disposed on a second edge region, and the first release film may be positioned corresponding to the first support pin portion. and a second through-hole formed at a position corresponding to the first through-hole and the second support pin portion, wherein in the step of disposing the first release film on the first mold member, the first through-hole The first support pin part may be inserted into the , and the second support pin part may be inserted into the second through hole.

In the filling of the underfill material, a portion of the underfill material may pass through the vent hole of the circuit board to contact the upper surface of the first release film.

Before the filling of the underfill material, a second mold member facing the first mold member may be disposed on the device structure. The second mold member may be disposed with a second release film interposed between the second mold member and the device structure. After disposing the second mold member, the filling of the underfill material may be performed through a molded underfill (MUF) process.

According to embodiments of the present invention, process efficiency can be greatly improved by preventing a problem of contamination of a mold device (ie, a mold) during an underfill process during a semiconductor package manufacturing process. In addition, according to embodiments of the present invention, it is possible to effectively solve a problem of deterioration of workability due to deformation of a substrate on a mold device (ie, a mold) during an underfill process during a manufacturing process of a semiconductor package.

According to embodiments, since the problem due to substrate deformation can be effectively solved while fundamentally preventing contamination of the mold apparatus (ie, the mold) using a fairly simple method, a high process improvement effect can be obtained at low cost.

1A to 1C are cross-sectional views illustrating a method of forming an underfill according to an exemplary embodiment of the present invention.
2 is a cross-sectional view for explaining a problem of an underfill forming method according to a comparative example.
3 is a cross-sectional view for explaining a problem of a method for forming an underfill according to a comparative example.
4 is a schematic diagram for explaining a process of forming a ventilation hole in a release film in the underfill forming method according to an embodiment of the present invention.
5 is a schematic diagram for explaining a process of forming a ventilation hole in a release film in the method for forming an underfill according to a comparative example.
6A to 6D are cross-sectional views for explaining a method of forming an underfill according to another embodiment of the present invention.
7A and 7B are plan views illustrating a process of dividing an underfilled device structure into a plurality of unit devices according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Examples of the present invention to be described below are provided to more clearly explain the present invention to those of ordinary skill in the art, and the scope of the present invention is not limited by the following examples, The embodiment may be modified in many different forms.

The terminology used herein is used to describe specific embodiments, not to limit the present invention. As used herein, terms in the singular form may include the plural form unless the context clearly dictates otherwise. Also, as used herein, the terms “comprise” and/or “comprising” refer to a referenced shape, step, number, action, member, element, and/or group that specifies the existence of these groups. and does not exclude the presence or addition of one or more other shapes, steps, numbers, acts, elements, elements, and/or groups thereof. In addition, as used herein, the term “connection” not only means that certain members are directly connected, but also includes indirectly connected members with other members interposed therebetween.

In addition, in the present specification, when a member is said to be located "on" another member, this includes not only a case in which a member is in contact with another member but also a case in which another member is present between the two members. As used herein, the term “and/or” includes any one and any combination of one or more of those listed items. In addition, as used herein, terms such as "about", "substantially", etc. are used in the meaning of the range or close to the numerical value or degree, in consideration of inherent manufacturing and material tolerances, and to help the understanding of the present application The exact or absolute figures provided for this purpose are used to prevent the infringer from using the mentioned disclosure unfairly.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The size or thickness of the regions or parts shown in the accompanying drawings may be slightly exaggerated for clarity and convenience of description. Like reference numerals refer to like elements throughout the detailed description.

1A to 1C are cross-sectional views illustrating a method of forming an underfill according to an exemplary embodiment of the present invention.

Referring to FIG. 1A , a circuit board S10 having at least one vent hole VH10, a plurality of semiconductor device parts D10 mounted on the circuit board S10, and the circuit board S10, A device structure DS10 including a plurality of electrical connection members B10 disposed between the plurality of semiconductor device portions D10 may be provided.

The circuit board S10 may be a printed circuit board (PCB). For example, the circuit board S10 may be a flexible printed circuit board (FPCB). At least one vent hole VH10 passing through the circuit board S10 in its thickness direction may be formed. One or more vent holes VH10 may be formed, and may be formed in the central portion or edge region of the circuit board S10 , or in an intermediate region between the central portion and the edge region. When the plurality of vent holes VH10 are formed, they may be formed to be relatively uniformly distributed over the entire region or substantially the entire region of the circuit board S10 , or within a predetermined range. The formation positions and number of the plurality of vent holes VH10 illustrated in FIG. 1A are exemplary, and the present invention is not limited thereto, and may be designed in various ways.

Each of the plurality of semiconductor device units D10 mounted or mounted on the circuit board S10 may be a semiconductor chip (ie, a die). The plurality of semiconductor device units D10 may be disposed to be spaced apart from each other at a predetermined interval. The plurality of semiconductor device units D10 may be arranged to form a two-dimensional array. A plurality of electrical connection members B10 may be disposed between each of the semiconductor device portions D10 and the circuit board S10 to electrically connect them to each other. The electrical connection member B10 may be a solder bump. A plurality of first electrode pads may be formed on a lower surface of each semiconductor element unit D10 , and a plurality of second electrode pads may be formed on an upper surface of the circuit board S10 . The plurality of electrical connection members B10 may be disposed to interconnect the plurality of first electrode pads and the plurality of second electrode pads.

An upper molding layer C10 may be further formed on each semiconductor device portion D10 . In other words, the device structure DS10 may further include a plurality of upper molding layers C10 formed on the plurality of semiconductor device portions D10 . The upper molding layer C10 may be a kind of protective layer, and may be formed of, for example, a molding material such as an epoxy molding compound (EMC). Here, the case where the upper molding layer C10 is individually formed on each of the semiconductor device portions D10 is illustrated, but in some cases, one molding layer may completely cover the upper surfaces of the plurality of semiconductor device portions D10. (upper molding layer) may be formed.

According to an embodiment of the present invention, after the first mold member MT10 having a plurality of suction holes SH10 is provided, a first release film is formed on the first mold member MT10 ( RF10 may be disposed, and the device structure DS10 to which an underfill process is to be performed may be disposed on the first release film RF10 .

The first mold member MT10 may be referred to as a first molding tool member (device unit). The first mold member MT10 may be a mold member. For example, the first mold member MT10 may be a lower mold. A plurality of suction holes SH10 may be formed in the first mold member MT10 . The plurality of suction holes SH10 may be arranged at a predetermined distance from each other in a regular or patterned manner. The plurality of suction holes SH10 may be formed to pass through the first mold member MT10 in the thickness direction, but in some cases, they do not penetrate in the thickness direction, but are formed from the upper surface of the first mold member MT10. It may be formed to extend by bending toward the side. The plurality of suction holes SH10 may be horizontally spaced apart from the vent hole VH10 so as not to overlap the vent hole VH10 of the circuit board S10 . At least an upper end of the suction hole SH10 may be spaced apart from the vent hole VH10 in a horizontal direction so as not to overlap the vent hole VH10. The formation positions and number of the plurality of suction holes SH10 illustrated in FIG. 1A are merely exemplary and may be variously changed within the scope of the present invention.

The first release film RF10 may be a thermosetting polymer film. For example, the first release film RF10 may be a thermosetting polyurethane-based polymer film. In an embodiment, the first release film RF10 may be a thermosetting polyurethane film. The thermosetting polyurethane film may be formed of a polyurethane resin. The polyurethane resin will be described in more detail as follows.

In terms of components, the polyurethane resin may have a number average molecular weight (or weight average molecular weight) of about 50,000 to 500,000. Urethane (polyurethane) can be obtained by reaction of polyol and isocyanate, and can be prepared by controlling the reaction rate and molecular weight using a catalyst.

As the polyol, one or a mixture of two or more products having a molecular weight of about 500 to 7000 may be used as a raw material. As the ether-based polyol, polypropylene glycol, modified polypropylene glycol, and polytetramethylene glycol (PTMG) may be used. As the polyester-based polyol, polyethylene glycol having a molecular weight in the range of about 500 to 7000 and adipate-based polyester polyol that is a polycondensation-based polycarbonate and lactone-based polyol of ring-opening polymerization can be used. . In addition, one or two or more of polybutadiene glycol and acryl-based polyol may be mixed and used. However, the above materials are exemplary, and the embodiment of the present invention is not limited thereto.

As the isocyanate material, various diisocyanate-based materials may be used. For example, PPDI as p-phenylene diisocyanate with a molecular weight of 160.1, TDI including its isomer as toluene-diisocyanate with a molecular weight of 174.2, NDI as 1,5-naphthalene diisocyanate with a molecular weight of 210.2, HDI as 1,6-hexamethylene diisocyanate with a molecular weight of 168.2 , MDI as 4,4'-diphenylmethane diisocyanate with a molecular weight of 250.3, IPDI as isoporon diisocyanate with a molecular weight of 222.3, and H12MDI as cyclohexylmethane diisocyanate with a molecular weight of 262 may be used. However, the above materials are exemplary, and the present application is not limited thereto.

In addition, in addition to the polyol and isocyanate, a chain extender material may be further used. The chain extender may serve to increase the molecular weight of the polyurethane and impart various functionalities. One to two or more of the chain extenders may be mixed and used. As the chain extender, ethylene glycol-based material, propylene glycol-based material, butadiene glycol-based material, polyhydric alcohol including silicone, polyhydric alcohol including fluorine, etc. may be used. However, the above materials are exemplary, and the present application is not limited thereto.

As the catalyst, various organic tin-based materials and organic bismuth-based materials may be used. The organotin-based material (organotin-based compound) may include, for example, dibutyltin dilaurate, stannous octoate, dibutyltin diacetate, dibutyltin dimercaptide, and the like. where dibutyltin dilaurate is (CH ₃ CH ₂ CH ₂ CH ₂ ) ₂ Sn[CH ₃ (CH ₂ ) ₁₀ COO] ₂ , stannous octoate is Sn[C ₇ H ₁₅ COO] ₂ , and dibutyltin diacetate is (CH ₃ CH ₂ CH ₂ CH ₂ ) ₂ Sn[CH ₃ COO] ₂ and dibutyltin dimercaptide is (CH ₃ CH ₂ CH ₂ CH ₂ ) ₂ Sn[SC ₁₂ H ₂₅ ]. The organic bismuth-based material (organic bismuth-based compound) may have various molecular weights, and may include, for example, a carboxylate-based catalyst material containing bismuth. Here, the carboxylate-based catalyst material may contain about 9% to about 45% of bismuth. However, the above materials are exemplary, and the present application is not limited thereto.

As a solvent for making a polyurethane resin solution, for example, DMF (dimethylformamide), DEF (diethylformamide), DMSO (dimethylsulfoxaide), DMAC (dimethylacetamide), toluene, ethyl acetate (EA), methyl ethyl ketone, including various Acetone solvents and the like can be used. However, the above materials are exemplary, and the present application is not limited thereto.

After preparing a resin solution for preparing polyurethane in which the polyol, isocyanate, and solvent are mixed, a polymer cured product having various crosslinking densities is formed by reaction using a melamine-based curing agent, its catalyst, and an isocyanate-based curing agent polymerized with various molecular weights. can do. In this case, a curing method by heat may be applied.

The polyurethane composition includes a polyester-based polyol (eg, molecular weight 500 to 7000), polyether-based polyol (eg, molecular weight 200 to 3000) or polycarbonate polyol (eg, molecular weight 500 to 8000) as a first material for the urethane reaction. Polyol such as may be applied, and an isocyanate-based material may be applied as a second material for the urethane reaction. As the isocyanate-based material, various isocyanate types containing a yellowing benzene-ring and various isocyanates including hexamethylene-based, isophorone-based and cyclohexylmethane-based non-yellowing modified isocyanates can be used. In addition, a chain extender may be further used to increase the molecular weight of the polyurethane. As the chain extender, ethylene glycol-based materials, propylene glycol-based materials, butadiene glycol-based materials, polyhydric alcohols including silicone, polyhydric alcohols including fluorine, etc. may be used, and the chain extender is reacted with urethane It is possible to increase the molecular weight of the polyurethane by participating in it.

As other additives, a leveling agent, an antifoaming agent, a curing agent, and the like may be further used. As the leveling agent, a silicone-based, fluorine-based or non-silicone-based modified polyether-based leveling agent may be used, and the leveling agent may be used in a mixture of about 0.1 wt% to 5 wt%. The antifoaming agent is for a defoaming function, for example, a silicone-based or non-silicone-based antifoaming agent may be used. The antifoaming agent may be used in a mixture of about 0.1 wt% to 5 wt%. In addition, as a curing agent for the curing reaction of the prepared polyurethane, a melamine-based curing agent and an isocyanate-based curing agent polymerized with several molecules may be used. In addition, the curing reaction may be accelerated in the presence of an acid catalyst.

The first release film RF10 may be a thermosetting polyurethane film formed of the above thermosetting polyurethane resin. The content of the thermosetting polyurethane in the first release film RF10 may be about 80 wt% to 100 wt%. However, in some cases, the first release film RF10 may include a part (a small amount) of other polymer materials or other additives in addition to the thermosetting polyurethane. Also, in some cases, the first release film RF10 may be formed of a thermosetting polymer other than the thermosetting polyurethane-based polymer.

The first release film RF10 may have a thickness in a range of about 15 μm to about 60 μm. Under this thickness condition, the first release film RF10 may exhibit excellent mechanical properties that simplifies the process of forming a vent hole through rupture by suction pressure, which will be described later in the underfill process according to the present embodiment. However, since the rupture process may be induced by weakening the strength of the first release film RF10 or increasing the suction pressure to be described later, in this case, the thickness of the first release film RF may be further increased. The first release film RF10 may be a film having releasability on both surfaces (lower surface and upper surface), and may be a film having fine concavities and convexities forming surface roughness for improving releasability on at least one surface of the both surfaces. have. The formation of the fine irregularities may be optional.

The device structure DS10 may be disposed on the first release film RF10 . In this case, the device structure DS10 may be disposed such that the circuit board S10 faces the first release film RF10 . The lower surface of the first release film RF10 may be in contact with the upper surface of the first mold member MT10, and the lower end of the device structure DS10, that is, the circuit board S10, may be in contact with the upper surface of the first release film RF10. The lower end of the may be in contact. Although not shown in FIG. 1A , a plurality of conductive members for contacting or mounting an external circuit such as a plurality of solder balls may be further formed on the lower surface of the circuit board S10 . In this case, the plurality of of the conductive members may be in contact with the upper surface of the first release film RF10 , and the lower surface of the circuit board S10 may be slightly spaced apart from the upper surface of the first release film RF10 .

According to an embodiment of the present invention, the first mold member MT10 includes the first support pin portion P10 and the second edge region (the second edge or the second edge) disposed in the first edge region (the first edge or a region adjacent thereto). It may further include a second support pin portion (P20) disposed in the adjacent region). In addition, the first release film RF10 includes a first through hole TH1 formed at a position corresponding to the first support pin portion P10 and a second through hole TH2 formed at a position corresponding to the second support pin portion P20 . ) may be included. In the step of disposing the first release film RF10 on the first mold member MT10, the first support pin part P10 may be inserted into the first through hole TH1, and the first support pin part P10 may be inserted into the second through hole TH2. The second support pin portion P20 may be inserted. As described above, by inserting the first and second support pin portions P10 and P20 into the first and second through holes TH1 and TH2, respectively, the first release film RF10 is formed on the first mold member MT10. Aligning and fixing the position may be facilitated. On the other hand, the arrangement, direction, and distance relationship between the first and second support pin portions P10 and P20 and the circuit board S10 shown in FIG. 1A shows the flatness and alignment of the release film RF10 required in the underfill process. , may be determined in consideration of various process requirements, such as fixing force, and may be variously changed and implemented within the scope of the present invention.

Referring to FIG. 1B , a plurality of ventilation holes AH10 may be formed in the first release film RF10 by applying a first suction pressure to the plurality of suction holes SH10 . The plurality of ventilation holes AH10 are formed in the thickness direction of the first release film RF10 while a corresponding portion of the first release film RF10 facing the respective suction holes SH10 is ruptured by the first suction pressure. It may be formed to penetrate. Accordingly, the plurality of ventilation holes AH10 may be formed at positions corresponding to the plurality of suction holes SH10 . More specifically, the plurality of ventilation holes AH10 may be formed at positions corresponding to upper ends of the plurality of suction holes SH10 . As such, the plurality of ventilation holes AH10 may be formed by a suction process of applying the first suction pressure to the plurality of suction holes SH10 . The first suction pressure may be a kind of vacuum pressure or negative pressure. In the present specification, the process of forming the plurality of ventilation holes AH10 in this way is referred to as a drilling process.

The first suction pressure for forming the plurality of ventilation holes AH10 may be, for example, in a range of about 20 KPa to about 90 KPa. In addition, in the step of forming the plurality of ventilation holes AH10 , the temperature of the first mold member MT10 may be in a range of about 50° C. to about 250° C. When these suction pressure (ie, the first suction pressure) conditions and temperature conditions are satisfied, the formation of the plurality of ventilation holes AH10 by the drilling process may be easier, and the respective suction holes SH10 are aligned. A subsequent underfill process may also be easily performed by the ventilation hole AH10.

As the first mold member MT10 is heated to the above-described temperature range, the device structure DS10 may also be heated. In this case, the circuit board S10, the semiconductor device portion D10, and the upper portion of the device structure DS10 are Due to the difference in the coefficient of thermal expansion between the molding layers C10 , the device structure DS10 may be deformed downwardly convexly (ie, in a U-shape). However, according to the embodiment of the present invention, when the plurality of vent holes AH10 are formed using the first suction pressure, the plurality of vent holes AH10 are formed while passing through the plurality of vent holes AH10. It is possible to strongly adsorb the device structure DS10 above it with strong vacuum pressure and pull it downward. Therefore, even if the device structure DS10 is deformed to be convex downward (ie, U-shape) due to the above heating, a plurality of ventilation holes AH10 are formed and a strong vacuum pressure is applied to the device structure DS10 . Accordingly, the device structure DS10 may be closely adhered (adsorbed) toward the first mold member MT10 to form a flat structure, and may be fixed toward the first mold member MT10. In this regard, the effect of improving the workability of the underfill process can be obtained.

The plurality of ventilation holes AH10 may have, for example, a diameter of about 0.05 mm to about 8 mm. When the diameter is within this range, a subsequent underfill process using the plurality of vent holes AH10 may be more easily performed.

Referring to FIG. 1C , the gas above the first release film RF10 is sucked through the plurality of suction holes SH10 and the plurality of ventilation holes AH10 by applying a second suction pressure to the plurality of suction holes SH10. An underfill process of filling an underfill material between and around the plurality of electrical connection members B10 may be performed while doing so. As a result, the underfill material layer F10 may be formed without voids between and around the plurality of electrical connection members B10 .

The underfill material may be a kind of resin. For example, the underfill material may include a material such as EMC. The underfill material may be supplied to the edge region of the device structure DS10 using a predetermined dispenser. As the underfill material is supplied from the edge region of the device structure DS10 to the inside thereof, capillary pressure may act, and the second suction pressure may act together with the capillary pressure, thereby performing an underfill process. The second suction pressure may be, for example, in the range of about 20 KPa to about 300 KPa. The second suction pressure may be equal to or substantially smaller than the first suction pressure described with reference to FIG. 1B . However, the present invention is not limited thereto, and the second suction pressure may be greater than the first suction pressure. In addition, in the step of forming the underfill material layer F10 , the temperature of the first mold member MT10 may be controlled in a range of about 50° C. to about 250° C. When these conditions are satisfied, the underfill material layer F10 may be more easily formed.

In the step of forming the underfill material layer F10 , a portion of the underfill material may pass through the vent hole VH10 of the circuit board S10 to contact the upper surface of the first release film RF10 . At this time, since the bend hole VH10 and the vent hole AH10 do not overlap and are spaced apart in the horizontal direction, the underfill material passing through the vent hole VH10 is the vent hole AH10 or a suction hole below it ( SH10) may not be entered. In the embodiment of the present invention, by using the first release film RF10 in which the ventilation hole AH10 is formed, the underfill material passing through the vent hole VH10 is transferred to the first mold member MT10 (ie, the lower mold). It is possible to fundamentally prevent the problem of contaminating the surface of Accordingly, after performing one underfill process, the next underfill process may be performed without a separate cleaning process for the surface of the first mold member MT10 (ie, the lower mold). Accordingly, workability and efficiency of the underfill process may be greatly improved.

2 is a cross-sectional view for explaining a problem of an underfill forming method according to a comparative example.

Referring to FIG. 2 , when the underfill process is performed by directly disposing the device structure DS10 on the first mold member MT10 without the first release film RF10 described with reference to FIGS. 1A to 1C , the vent hole VH10 ) may come into contact with the surface of the first mold member MT10 and contaminate the first mold member MT10 . In this case, it is necessary to clean the surface of the first mold member MT10 every time the underfill process is performed. Accordingly, workability and process efficiency may be greatly reduced.

3 is a cross-sectional view for explaining a problem of a method for forming an underfill according to a comparative example.

Referring to FIG. 3 , when the underfill process is performed by directly disposing the device structure DS10 on the first mold member MT10 without the first release film RF10 described with reference to FIGS. 1A to 1C , heating to a predetermined temperature When the device structure DS10 is loaded on the first mold member MT10 , the device structure DS10 is loaded due to a difference in the coefficient of thermal expansion between the circuit board S10 , the semiconductor device part D10 , and the upper molding layer C10 . There may be a problem in that the structure DS10 is deformed downward to be convex (ie, in a U-shape). Here, the shape of the deformation may be similar to the dotted line shown in the upper part of FIG. 3 . In this way, in a state in which the device structure DS10 is deformed to be convex downward (ie, in a U-shape), even when a suction pressure is applied through the suction hole SH10 , the edge of the device structure DS10 is formed by the first mold. It may not adhere well to the member MT10. Accordingly, it is necessary for the operator to forcibly deform a portion of the device structure DS10 to adhere to the first mold member MT10 during the suction process. For this reason, workability of the underfill process may be deteriorated.

However, according to the embodiment of the present invention, as described with reference to FIGS. 1A to 1C , the problems of the comparative examples shown in FIGS. 2 and 3 can be fundamentally or effectively solved. Accordingly, it is possible to obtain the effect that the workability and process efficiency of the underfill process are significantly improved.

4 is a schematic diagram for explaining a process of forming a ventilation hole in a release film in the underfill forming method according to an embodiment of the present invention.

Referring to FIG. 4 , when the first release film RF10 is disposed on the first mold member MT10 having the suction hole SH10 and suction pressure is applied through the suction hole SH10, the suction hole SH10 ), a portion of the first release film RF10 facing the suction hole SH10 is tensilely deformed like a balloon and finally ruptured, thereby forming a ventilation hole AH10 in the first release film RF10. In this case, the first release film RF10 may be a thermosetting polymer film. In this case, since the first release film RF10 has hard physical properties due to the characteristics of the thermosetting polymer film, the vent hole AH10 may be formed as it ruptures while resisting the suction pressure. When the portion corresponding to the suction hole SH10 in the first release film RF10 is stressed by the suction pressure and the ventilation hole AH10 is formed, the stress is relieved, and accordingly, the ventilation hole AH10 The shape can be adjusted somewhat. As a result, the ventilation hole AH10 as shown in the rightmost view of FIG. 4 may be formed. Accordingly, in the first release film RF10 , the peripheral portion of the ventilation hole AH10 may not or hardly be introduced into the suction hole SH10 .

5 is a schematic diagram for explaining a process of forming a ventilation hole in a release film in the method for forming an underfill according to a comparative example.

Referring to FIG. 5 , a release film RF10 ′ is disposed on the first mold member MT10 having a suction hole SH10 , and suction pressure is applied through the suction hole SH10 to apply a suction pressure to the release film RF10 ′. A ventilation hole AH10' may be formed in the . In this case, the release film RF10' may be a thermoplastic polymer film. In this case, the release film RF10' may be stretched to penetrate relatively deeply into the suction hole SH10 by the heating temperature and suction pressure, and the vent hole AH10' may be formed as the lower end of the stretched portion is ruptured. . Due to the characteristics of the thermoplastic polymer film, even after the ventilation hole AH10 ′ is formed, the portion extending (penetrating) into the suction hole SH10 from the release film RF10 ′ may maintain its state. Accordingly, in this case, there is a possibility that a problem such as a part of the suction hole SH10 being blocked by the release film RF10 ′ may occur. Therefore, it may be more preferable to use the above-described thermosetting polymer film instead of the thermoplastic polymer film.

6A to 6D are cross-sectional views for explaining a method of forming an underfill according to another embodiment of the present invention.

Referring to FIG. 6A , a circuit board S10 having at least one vent hole VH10, a plurality of semiconductor device units D10 mounted on the circuit board S10, and the circuit board S10 and a plurality of semiconductor devices A device structure DS10a including a plurality of electrical connection members B10 disposed between the portions D10 may be provided. In this case, the upper molding layer ( C10 of FIG. 1A ) as shown in FIG. 1A may not be provided on each semiconductor device part D10 . After preparing the first mold member MT10 having the plurality of suction holes SH10 , the first release film RF10 may be disposed on the first mold member MT10 , and on the first release film RF10 . A device structure DS10a may be disposed on the . The first release film RF10 may be a thermosetting polymer film. For example, the first release film RF10 may be a thermosetting polyurethane-based polymer film. The structure of FIG. 6A may be the same as or substantially the same as that of FIG. 1A except that the upper molding layer (C10 of FIG. 1A ) is not provided on the semiconductor device part D10 . Accordingly, the features described in FIG. 1A may be directly applied to FIG. 6A as well.

Referring to FIG. 6B , a plurality of ventilation holes AH10 may be formed in the first release film RF10 by applying a first suction pressure to the plurality of suction holes SH10 . The process of FIG. 6B may be the same as or substantially the same as the process described with reference to FIG. 1B. Accordingly, the process conditions and characteristics described in FIG. 1B may be directly applied to FIG. 6B as well.

As shown in FIG. 6B , when the plurality of ventilation holes AH10 are formed using the first suction pressure, the plurality of ventilation holes AH10 are formed and instantaneous strong vacuum pressure through the plurality of ventilation holes AH10 is formed. As a result, it is possible to strongly adsorb the device structure DS10a above it and pull it downward. Therefore, even if the device structure DS10a is deformed to be convex downward (that is, in a U-shape) due to the above heating, a plurality of ventilation holes AH10 are formed and a strong vacuum pressure is applied to the device structure DS10a. Accordingly, the device structure DS10a may be fixedly adhered to (adsorbed) toward the first mold member MT10 while forming a flat structure. In this regard, the effect of improving the workability of the underfill process can be obtained.

Referring to FIG. 6C , a second mold member MT20 facing the first mold member MT10 may be disposed on the device structure DS10a. In this case, the second release film RF20 may be interposed between the second mold member MT20 and the device structure DS10a. The second mold member MT20 may be referred to as a second molding tool member (device unit). The second mold member MT20 may be a mold member, and may be referred to as an upper mold. The second release film RF20 may be the same film as the first release film RF10 , but may be a different film.

A first insertion groove G1 into which the first support pin portion P10 is inserted and a second insertion groove G2 into which the second support pin portion P20 is inserted may be provided on the lower surface of the second mold member MT20. have. The second mold member MT20 may be disposed on the first mold member MT10 so that the first and second support pin parts P10 and P20 are respectively inserted into the first and second insertion grooves G1 and G2. . However, the coupling relationship between the first mold member MT10 and the second mold member MT20 illustrated here is merely exemplary, and may be variously changed. Also, the arrangement relationship between the first and second support pin portions P10 and P20 and the second release film RF20 is exemplary and may be variously changed.

Although not shown in FIG. 6C , the first suction pressure described with reference to FIG. 6B may be continuously applied to the plurality of suction holes SH10 even in the step of FIG. 6C . That is, the first suction pressure described with reference to FIG. 6B may be continuously applied to the plurality of suction holes SH10 even in the step of FIG. 6C .

Referring to FIG. 6D , the gas above the first release film RF10 is sucked through the plurality of suction holes SH10 and the plurality of ventilation holes AH10 by applying a second suction pressure to the plurality of suction holes SH10. An underfill process of filling an underfill material between and around the plurality of electrical connection members B10 may be performed while doing so. In this case, the underfill process may be a molded underfill (MUF) process. That is, while filling the underfill material between and around the plurality of electrical connection members B10 , the upper surfaces of the plurality of semiconductor device portions D10 and surrounding areas may be molded with the underfill material. As a result, the MUF material layer MF10 may be formed between and around the top surfaces and peripheral regions of the plurality of semiconductor device portions D10 and the plurality of electrical connection members B10 . The MUF material layer MF10 may include an underfill material layer. The underfill material may include a material such as EMC, and may be injected between the first mold member MT10 and the second mold member MT20 through a predetermined method.

The second suction pressure may be, for example, in the range of about 20 KPa to 200 KPa. The second suction pressure may be equal to or substantially smaller than the first suction pressure described with reference to FIG. 6B . However, the present invention is not limited thereto, and the second suction pressure may be greater than the first suction pressure. Also, in the step of forming the MUF material layer MF10 , the temperature of the first mold member MT10 may be controlled in a range of about 50° C. to about 250° C. When these conditions are satisfied, the MUF material layer MF10 may be more easily formed.

In the step of forming the MUF material layer MF10 , a portion of the underfill material may pass through the vent hole VH10 of the circuit board S10 to contact the upper surface of the first release film RF10 . At this time, since the bend hole VH10 and the vent hole AH10 do not overlap and are spaced apart in the horizontal direction, the underfill material passing through the vent hole VH10 is the vent hole AH10 or a suction hole below it ( SH10) may not be entered. In the embodiment of the present invention, by using the first release film RF10 in which the ventilation hole AH10 is formed, the underfill material passing through the vent hole VH10 is transferred to the first mold member MT10 (ie, the lower mold). It is possible to fundamentally prevent the problem of contaminating the surface of Accordingly, after performing one underfill process, the next underfill process may be performed without a separate cleaning process for the surface of the first mold member MT10 (ie, the lower mold). Accordingly, workability and efficiency of the underfill process may be greatly improved.

After performing the underfill process using the method of FIGS. 1A to 1C or the method of FIGS. 6A to 6D , the underfilled device structure is separated from the first mold member MT10 and the first release film RF10, By dividing the underfilled device structure into a plurality of unit devices, a semiconductor package (ie, a semiconductor package device) may be manufactured.

7A and 7B are plan views illustrating a process of dividing the underfilled device structure 100 into a plurality of unit devices 10 according to an embodiment of the present invention.

Referring to FIG. 7A , the underfilled device structure 100 may be formed by the method of FIGS. 1A to 1C or 6A to 6D . Here, reference numeral S10 denotes a circuit board, and D10 denotes a semiconductor element part.

Referring to FIG. 7B , the underfilled device structure ( 100 of FIG. 7A ) may be divided into a plurality of unit devices 10 . Each unit device 10 may include a semiconductor device portion D10. The unit device 10 may be referred to as a packaged semiconductor device, that is, a semiconductor package device.

According to the embodiments of the present invention described above, process efficiency can be greatly improved by preventing the problem of contamination of the mold device (ie, the mold) during the underfill process during the manufacturing process of the semiconductor package. In addition, according to embodiments of the present invention, it is possible to effectively solve a problem of deterioration of workability due to deformation of a substrate on a mold device (ie, a mold) during an underfill process during a manufacturing process of a semiconductor package. According to embodiments, since the problem due to substrate deformation can be effectively solved while fundamentally preventing contamination of the mold apparatus (ie, the mold) using a fairly simple method, a high process improvement effect can be obtained at low cost.

Techniques according to an embodiment of the present invention may be applied to various underfill processes as well as a molded underfill (MUF) process. That is, the techniques according to the embodiment can be applied to various underfill processes in which a vent hole (resin through hole) is formed in the circuit board and the circuit board is brought into close contact with the lower mold through the suction hole of the lower mold. In addition, the techniques according to the embodiment produce all kinds of semiconductor packages that can be manufactured through an underfill process, such as a ball grid array (BGA), a chip scale package (CSP), a flip chip, and a through silicon via (TSV). can be applied to

In the present specification, preferred embodiments of the present invention have been disclosed, and although specific terms are used, these are only used in a general sense to easily explain the technical content of the present invention and help the understanding of the present invention, and to limit the scope of the present invention. It is not meant to be limiting. It will be apparent to those of ordinary skill in the art to which the present invention pertains that other modifications based on the technical spirit of the present invention can be implemented in addition to the embodiments disclosed herein. Those of ordinary skill in the art will recognize the method for forming underfill according to the embodiment described with reference to FIGS. 1A to 1C, 4, 6A to 6D, and 7A and 7B and manufacturing a semiconductor package to which the method is applied. It will be appreciated that the method may be variously substituted, changed, and modified without departing from the spirit of the present invention. Therefore, the scope of the invention should not be determined by the described embodiments, but should be determined by the technical idea described in the claims.

* Explanation of symbols for the main parts of the drawing *
AH10: Ventilation hole B10: Electrical connection member
C10: upper molding layer D10: semiconductor element part
DS10, DS10a: device structure F10: underfill material layer
G1, G2: insertion groove MF10: MUF material layer
MT10: first mold member MT20: second mold member
P10, P20: support pin RF10: first release film
RF20: second release film S10: circuit board
SH10 : Suction hole TH1, TH2 : Through hole
VH10: vent hole 10: unit element
100: underfilled device structure

Claims (27)

A device comprising: a circuit board having at least one vent hole; a plurality of semiconductor device portions mounted on the circuit board; and a plurality of electrical connection members disposed between the circuit board and the plurality of semiconductor device portions providing a structure;
disposing a first release film on a first mold member having a plurality of suction holes;
disposing the device structure on the first release film, and disposing the device structure so that the circuit board faces the first release film;
forming a plurality of ventilation holes at positions corresponding to the plurality of suction holes of the first release film by applying a first suction pressure to the plurality of suction holes; and
Underfill ( filling an underfill material, wherein in the filling the underfill material the vent hole of the circuit board is configured to serve to pass a portion of the underfill material toward the first release film. The method of claim 1,
The first release film is a thermosetting (thermosetting) polymer film underfill forming method. 3. The method of claim 2,
The first release film is a thermosetting polyurethane-based polymer film underfill forming method. The method of claim 1,
The first release film is an underfill forming method having a thickness in the range of 15 μm to 60 μm. The method of claim 1,
wherein the first suction pressure is in the range of 20 KPa to 90 KPa. The method of claim 1,
In the forming of the plurality of vent holes, the temperature of the first mold member is in the range of 50°C to 250°C. The method of claim 1,
The plurality of vent holes have a diameter in the range of 0.05 mm to 8 mm. The method of claim 1,
The first mold member includes a first support pin portion disposed on a first edge region and a second support pin portion disposed on a second edge region;
The first release film includes a first through hole formed at a position corresponding to the first support pin portion and a second through hole formed at a position corresponding to the second support pin portion,
In the disposing of the first release film on the first mold member, the underfill forming method includes inserting the first support pin part into the first through hole and inserting the second support pin part into the second through hole. The method of claim 1,
In the step of filling the underfill material, a portion of the underfill material passes through the vent hole of the circuit board and contacts the upper surface of the first release film. The method of claim 1,
Before the filling of the underfill material, a second mold member facing the first mold member is disposed on the device structure, with a second release film interposed between the second mold member and the device structure further comprising disposing the second mold member;
After disposing the second mold member, the step of filling the underfill material is performed as a molded underfill (MUF) process, wherein the MUF process deposits the underfill material between and around the plurality of electrically connecting members. The underfill forming method is a process of molding an upper surface and a periphery of the plurality of semiconductor device parts with the underfill material while charging. A method for manufacturing a semiconductor package, comprising:
A device comprising: a circuit board having at least one vent hole; a plurality of semiconductor device portions mounted on the circuit board; and a plurality of electrical connection members disposed between the circuit board and the plurality of semiconductor device portions providing a structure;
disposing a first release film on a first mold member having a plurality of suction holes;
disposing the device structure on the first release film, and disposing the device structure so that the circuit board faces the first release film;
forming a plurality of ventilation holes at positions corresponding to the plurality of suction holes of the first release film by applying a first suction pressure to the plurality of suction holes;
An underfill material between and around the plurality of electrical connection members while suctioning gas above the first release film through the plurality of suction holes and the plurality of ventilation holes by applying a second suction pressure to the plurality of suction holes charging;
separating the device structure on which the underfill material is formed from the first mold member and the first release film; and
dividing the device structure into a plurality of unit devices;
and the vent hole of the circuit board in the step of filling the underfill material is configured to serve to pass a portion of the underfill material toward the first release film. 12. The method of claim 11,
The first release film is a method of manufacturing a semiconductor package which is a thermosetting polymer film. 13. The method of claim 12,
The first release film is a method of manufacturing a semiconductor package that is a thermosetting polyurethane-based polymer film. 12. The method of claim 11,
The first release film is a method of manufacturing a semiconductor package having a thickness in the range of 15㎛ ~ 60㎛. 12. The method of claim 11,
The first suction pressure is in the range of 20 KPa to 90 KPa. 12. The method of claim 11,
In the forming of the plurality of ventilation holes, the temperature of the first mold member is in the range of 50°C to 250°C. 12. The method of claim 11,
The method of manufacturing a semiconductor package wherein the plurality of ventilation holes have a diameter in the range of 0.05 mm to 8 mm. 12. The method of claim 11,
The first mold member includes a first support pin portion disposed on a first edge region and a second support pin portion disposed on a second edge region;
The first release film includes a first through hole formed at a position corresponding to the first support pin portion and a second through hole formed at a position corresponding to the second support pin portion,
In the disposing of the first release film on the first mold member, the manufacturing of a semiconductor package in which the first support pin part is inserted into the first through hole and the second support pin part is inserted into the second through hole Way. 12. The method of claim 11,
In the filling of the underfill material, a portion of the underfill material passes through the vent hole of the circuit board and contacts the upper surface of the first release film. 12. The method of claim 11,
Before the filling of the underfill material, a second mold member facing the first mold member is disposed on the device structure, with a second release film interposed between the second mold member and the device structure further comprising disposing the second mold member;
After disposing the second mold member, the step of filling the underfill material is performed as a molded underfill (MUF) process, wherein the MUF process deposits the underfill material between and around the plurality of electrically connecting members. A method of manufacturing a semiconductor package, comprising a step of molding an upper surface and a periphery of the plurality of semiconductor device parts with the underfill material while charging. In a device structure including a circuit board having a vent hole, a semiconductor device mounted on the circuit board, and an electrical connection member disposed between the circuit board and the semiconductor device, the semiconductor device and the circuit A release film for an underfill process of filling an underfill material between substrates, the release film comprising:
The vent hole serves to pass a portion of the underfill material toward the release film disposed under the circuit board in the underfill process,
The release film is a thermosetting polymer film disposed between the circuit board and the lower mold member on the lower mold member having a plurality of suction holes, and has a thickness in the range of 15 μm to 60 μm, and the plurality of A release film configured to form a plurality of ventilation holes by rupturing portions of the release film corresponding to the plurality of suction holes by the first suction pressure applied to the suction holes. delete delete 22. The method of claim 21,
The release film is a release film that is a thermosetting polyurethane-based polymer film. delete 22. The method of claim 21,
The first suction pressure is a release film in the range of 20 kPa ~ 80 Kpa. 22. The method of claim 21,
The plurality of ventilation holes is a release film having a diameter in the range of 0.05 mm to 8 mm.

Images