KR102407517B1 - Release film for semiconductor package and method of manufacturing the same - Google Patents

Abstract

Disclosed are a release film for a semiconductor package and a method for manufacturing the same. The disclosed release film for a semiconductor package is an intermediate body layer including a structure in which at least one polyurethane layer and at least one antistatic layer are laminated, and is disposed on a lower surface of the intermediate body layer, and is disposed on the lower surface of the intermediate body layer, and the first fine irregularities for release property on the lower surface portion and a second release layer disposed on the upper surface of the intermediate body layer and having second fine concavities and convexities on the upper surface portion for release property. The at least one polyurethane layer may include a thermosetting polyurethane having a cross-linkage. The antistatic layer may include a carbon nanotube (CNT).

Description

Release film for semiconductor package and method of manufacturing the same

The present invention relates to a polymer-based film member and a method for manufacturing the same, and more particularly, to a release film for a semiconductor package and a method for manufacturing the same.

In the packaging process of a semiconductor device, a molding process is a process of encapsulating a chip and a carrier substrate on which the chip is mounted with a molding material. A mold molding apparatus is used for sealing a semiconductor device, and is made by injecting a mold material into a mold mold. As the molding material, an epoxy molding compound (EMC) in which an inorganic material and various auxiliary materials are added to an epoxy resin is mainly used.

In the packaging process, a method of interposing a release film between the mold mold and the mold resin may be used as a method of releasing the mold mold and the molded article after curing of the mold material is completed. The release film is supplied into a mold molding apparatus, is introduced into a mold mold temperature-controlled to a molding processing temperature, and is closely attached to the mold mold by vacuum suction, and a mold resin is filled thereon. Accordingly, the release film may be disposed between the mold mold and the mold resin. When the mold is opened when the mold resin is cured, the molded article may be peeled off from the release film.

Conventional release films are mainly made of ETFE (ethylene tetrafluoroethylene) resin. The ETFE release film has thermoplasticity and is mainly manufactured by a T-die ejection method using an extruder. Since the ETFE release film has thermoplastic properties, at a high heating temperature required during the EMC molding process, the release film may not withstand the pressure and the edge portion may be ruptured, which may cause contamination of the mold molding apparatus. there is a problem. Accordingly, the ETPE release film has a limitation in that it is mainly used at a temperature of about 165° C. or less. In addition, when EMC molding is performed using the ETFE release film, since fume-gas generated from EMC has high permeability through the release film, mold contamination by fume-gas This occurs, and as a result, a cycle for frequently cleaning the mold is required, so there is a problem of a decrease in productivity.

In addition, in the case of a conventional release film, dust or foreign substances may adhere to the film due to an electrification phenomenon, which may cause process defects and mold contamination. Or, it may lead to product defects that are destroyed.

Previously, release films for semiconductor packages containing inorganic fillers or polymer antistatic materials have been proposed, but in these cases, there is a problem in that antistatic properties are lost during a high-temperature packaging process, or the mold is contaminated due to the drop-off of the inorganic fillers. there is a problem to be In addition, during the packaging process, the release film is stretched by about 2 mm from the edge portion of the substrate, so that the antistatic properties of the release film may be lost or deteriorated.

The technical problem to be achieved by the present invention is a semiconductor that has excellent mechanical properties that can withstand high-temperature and high-pressure conditions without rupture during the molding process of a semiconductor package, as well as excellent releasability, and a semiconductor capable of maintaining excellent antistatic performance even during high-temperature processing To provide a release film for packaging.

Another object of the present invention is to provide a release film for a semiconductor package capable of maintaining excellent antistatic properties even when a part of the release film is stretched during the molding process of the semiconductor package.

In addition, the technical problem to be achieved by the present invention is to provide a method of manufacturing the above-described release film for a semiconductor package.

The problem to be solved by the present invention is not limited to the problems mentioned above, and other problems not mentioned will be understood by those skilled in the art from the following description.

According to an embodiment of the present invention, there is provided a release film for a semiconductor package, comprising: an intermediate body layer comprising a structure in which at least one polyurethane layer and at least one antistatic layer are laminated; a first release layer disposed on a lower surface of the intermediate body layer and having first fine concavities and convexities on the lower surface portion for release property; and a second release layer disposed on the upper surface of the intermediate body layer, the second release layer having second fine irregularities for release property on the upper surface, wherein the at least one polyurethane layer comprises a thermosetting polyurethane having a cross-linkage A release film for a semiconductor package is provided.

The antistatic layer may include a carbon nanotube (CNT).

The content of the CNT in the antistatic layer may be about 30 to 90 wt%.

The CNTs may include multi-walled CNTs (MWCNTs).

The intermediate body layer may include an intermediate polyurethane layer, a first antistatic layer disposed on a lower surface of the intermediate polyurethane layer, and a second antistatic layer disposed on an upper surface of the intermediate polyurethane layer, the intermediate polyurethane layer may correspond to the polyurethane layer, and the first and second antistatic layers may correspond to the antistatic layer.

The intermediate body layer may include a first polyurethane layer and a second polyurethane layer and an intermediate antistatic layer disposed therebetween, and the first and second polyurethane layers may correspond to the polyurethane layer, and , the intermediate antistatic layer may correspond to the antistatic layer.

The polyurethane layer may have a thickness in the range of about 10 μm to 70 μm.

The antistatic layer may have a thickness in the range of about 0.1 μm to 2 μm.

The release film may have a thickness in the range of about 30 μm to 140 μm.

At least one of the first and second release layers may have the same material composition as that of the polyurethane layer.

At least one of the first and second release layers may have a material composition different from that of the polyurethane layer.

At least one of the first and second release layers may include an inorganic material. When the first release layer includes the inorganic material, the first fine irregularities may be formed on the lower surface of the first release layer by the inorganic material. When the second release layer includes the inorganic material, the second fine irregularities may be formed on the upper surface of the second release layer by the inorganic material.

According to another embodiment of the present invention, there is provided a method of manufacturing a release film for a semiconductor package, comprising the steps of: providing a polyurethane layer comprising a thermosetting polyurethane having a cross-linkage; Forming a first release layer on any one of the lower surface and upper surface of the polyurethane layer, forming the first release layer with a first antistatic layer interposed between the polyurethane layer and the first release layer ; and forming the second release layer on the other of the lower surface and upper surface of the polyurethane layer, wherein the second release layer is formed with a second antistatic layer interposed between the polyurethane layer and the second release layer and wherein the first release layer has first fine concavities and convexities for releasability on a surface opposite to the surface in contact with the first antistatic layer, and the second release layer is opposite to the surface in contact with the second antistatic layer Provided is a method of manufacturing a release film for a semiconductor package having a second fine concavo-convex surface for release property.

The first and second antistatic layers may be formed by a coating method using an antistatic coating solution.

The antistatic coating solution may contain about 0.1 wt% to about 2 wt% of carbon nanotube (CNT).

The first and second antistatic layers may be formed using a micro-gravure coater or a direct gravure coater.

At least one of the first and second release layers may have the same material composition as that of the polyurethane layer.

At least one of the first and second release layers may have a material composition different from that of the polyurethane layer.

According to another embodiment of the present invention, there is provided a method of manufacturing a release film for a semiconductor package, the method comprising: providing first and second polyurethane layers comprising a thermosetting polyurethane having a cross-linkage; and one surface of the first polyurethane layer and one surface of the second polyurethane layer are mutually bonded, and the first and second polyurethane layers with an antistatic layer interposed between the first and second polyurethane layers and bonding to each other, wherein a first release layer is provided on the other surface of the first polyurethane layer, and a second release layer is provided on the other surface of the second polyurethane layer, and the first release layer is A surface opposite to the surface in contact with the first polyurethane layer has a first fine unevenness for release property, and the second release layer has second minute unevenness and depressions for release property on a surface opposite to the surface in contact with the second polyurethane layer. A method of manufacturing a release film for a semiconductor package is provided.

The antistatic layer may be formed by a coating method using an antistatic coating solution.

The antistatic coating solution may contain about 0.1 wt% to about 2 wt% of carbon nanotube (CNT).

The antistatic layer may be formed using a micro-gravure coater or a direct gravure coater.

At least one of the first and second release layers may have the same material composition as that of the first and second polyurethane layers.

At least one of the first and second release layers may have a material composition different from that of the first and second polyurethane layers.

According to embodiments of the present invention, it has excellent mechanical properties to withstand high temperature and high pressure conditions without rupture during the molding process of a semiconductor package, as well as excellent releasability, and can maintain excellent antistatic performance even during high temperature processing. A release film for a semiconductor package can be implemented. In addition, according to embodiments of the present invention, it is possible to implement a release film for a semiconductor package capable of maintaining excellent antistatic properties even when a part of the release film is stretched during the molding process of the semiconductor package. When the release film for a semiconductor package according to the embodiment is used, the defect rate of the semiconductor package may be reduced, productivity may be improved, and characteristics of the manufactured package may be improved.

1 is a cross-sectional view showing a release film for a semiconductor package according to an embodiment of the present invention.
2 is a cross-sectional view showing a release film for a semiconductor package according to another embodiment of the present invention.
3A to 3C are cross-sectional views illustrating a method of manufacturing a release film for a semiconductor package according to an embodiment of the present invention.
4A and 4B are cross-sectional views illustrating a method of manufacturing a release film for a semiconductor package according to another embodiment of the present invention.
5A to 5D are cross-sectional views illustrating a method of manufacturing a release film for a semiconductor package according to another embodiment of the present invention.
6A to 6C are cross-sectional views illustrating a method of manufacturing a release film for a semiconductor package according to another embodiment of the present invention.
7 is a view for explaining an apparatus applicable to a method of manufacturing a release film for a semiconductor package according to an embodiment of the present invention and a manufacturing process using the same.
8 is a view for explaining a molding process of a semiconductor package to which a release film for a semiconductor package is applied according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Examples of the present invention to be described below are provided to more clearly explain the present invention to those of ordinary skill in the art, and the scope of the present invention is not limited by the following examples, The embodiment may be modified in many different forms.

The terminology used herein is used to describe specific embodiments, not to limit the present invention. As used herein, terms in the singular form may include the plural form unless the context clearly dictates otherwise. Also, as used herein, the terms “comprise” and/or “comprising” refer to a referenced shape, step, number, action, member, element, and/or group that specifies the existence of these groups. and does not exclude the presence or addition of one or more other shapes, steps, numbers, acts, elements, elements, and/or groups thereof. In addition, as used herein, the term “connection” not only means that certain members are directly connected, but also includes indirectly connected members with other members interposed therebetween.

In addition, in the present specification, when a member is said to be located "on" another member, this includes not only a case in which a member is in contact with another member but also a case in which another member is present between the two members. As used herein, the term “and/or” includes any one and any combination of one or more of those listed items. In addition, as used herein, terms such as "about", "substantially", etc. are used in the meaning of the range or close to the numerical value or degree, in consideration of inherent manufacturing and material tolerances, and to help the understanding of the present application The exact or absolute figures provided for this purpose are used to prevent the infringer from using the mentioned disclosure unfairly.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The size or thickness of the regions or parts shown in the accompanying drawings may be slightly exaggerated for clarity and convenience of description. Like reference numerals refer to like elements throughout the detailed description.

1 is a cross-sectional view showing a release film for a semiconductor package according to an embodiment of the present invention.

Referring to Figure 1, the release film for a semiconductor package according to this embodiment is a polyurethane layer (intermediate polyurethane layer) (P10) and a first antistatic layer (A10) disposed on the lower surface of the polyurethane layer (P10) and poly It may include a second antistatic layer (A20) disposed on the upper surface of the urethane layer (P10). In addition, the release film may include a first release layer (R10) disposed on the lower surface of the first antistatic layer (A10) and a second release layer (R20) disposed on the upper surface of the second antistatic layer (A20). . The first release layer R10 may have the first fine concavo-convex N10 for release property on its lower surface (lower surface portion), that is, the first surface S10 . The second release layer R20 may have the second fine concavo-convex N20 for release property on its upper surface (upper surface portion), that is, the second surface S20 . The release film can be said to include an 'intermediate body layer' having a structure in which at least one polyurethane layer (P10) and at least one antistatic layer (A10, A20) are laminated, and is formed on the lower surface of the intermediate body layer. It can be said that one release layer R10 is disposed, and a second release layer R20 is disposed on the upper surface of the intermediate body layer.

The polyurethane layer P10 may include a thermosetting polyurethane having a cross-linkage. The content of the thermosetting polyurethane in the polyurethane layer P10 may be about 80 wt% or more or about 90 wt% or more. In one embodiment, the content of the thermosetting polyurethane in the polyurethane layer (P10) may be about 80 wt% to 100 wt%. The polyurethane layer P10 may include thermosetting polyurethane as a main constituent material or may be composed of thermosetting polyurethane. In addition, in some cases, the polyurethane layer (P10) contains other polymer materials or other additives other than the thermosetting polyurethane, for example, an initiator for crosslinking reaction, a leveling agent and/or an antifoaming agent (a small amount). You may.

The first and second antistatic layers A10 and A20 may include carbon nanotube (CNT) as an antistatic material. Antistatic properties may be exhibited by the conductive properties of the CNTs. A plurality (a large amount) of CNTs may be contained in each of the first and second antistatic layers A10 and A20. A plurality of CNTs in each of the first and second antistatic layers A10 and A20 may at least partially form a network structure. The content of the CNTs in each of the first and second antistatic layers A10 and A20 may be about 30 wt% to about 90 wt%. In addition, the CNT may be a multi-walled CNT (MWCNT). When these conditions are satisfied, the first and second antistatic layers A10 and A20 may be advantageous in exhibiting excellent antistatic performance even at a high elongation (or referred to as elongation) of the release film. Even if the release film is stretched to some extent, the plurality of CNTs may maintain a network structure, and antistatic performance may be maintained. The first and second antistatic layers A10 and A20 may also be referred to as 'antistatic layers', 'antistatic sheets' or 'antistatic coating layers'.

Each of the first and second antistatic layers A10 and A20 may further include a predetermined polymer material serving as an adhesive. The polymer material may include, for example, silicone. The silicone may be, for example, hybrid silicone. In addition, each of the first and second antistatic layers A10 and A20 may further include a conductive polymer material. The conductive polymer material secures a conductive path between CNT particles, and ensures conductivity while ensuring flexibility. As a non-limiting example, the conductive polymer material may be PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)]. By using a polymer conductor material such as PEDOT:PSS and CNT together, the antistatic performance can be further improved. When the silicon is applied to the antistatic layers (A10, A20), the content may be about 5 to 30 wt%. When the conductive polymer material is applied to the antistatic layers A10 and A20, the content may be about 5 to 65 wt%.

The first release layer R10 may have a first surface S10 on the opposite side of the first antistatic layer A10, and the first surface S10 includes at least first fine concavities and convexities N10 for improving the releasability. can have In the drawing, the lower surface of the first release layer R10 may be the first surface S10 , and the first antistatic layer A10 may be bonded to the upper surface of the first release layer R10 . The second release layer R20 may have a second surface S20 on the opposite side of the second antistatic layer A20, and the second surface S20 includes at least second fine concavities and convexities N20 for improving the releasability. can have In the drawing, the upper surface of the second release layer R20 may be the second surface S20 , and the second antistatic layer A20 may be bonded to the lower surface of the second release layer R20 .

The first surface S10 may have a surface roughness Ra of about 5 μm or more due to the first fine irregularities N10 . In an embodiment, the surface roughness Ra of the first surface S10 may be about 5 μm to about 20 μm. The second surface S20 may have a surface roughness Ra of about 5 μm or more due to the second fine irregularities N20 . In an embodiment, the surface roughness Ra of the second surface S20 may be about 5 μm to about 20 μm. However, the surface roughness Ra of the first surface S10 and the second surface S20 is not limited to the above, and may be designed differently in some cases.

At least one of the first and second release layers R10 and R20 may have the same material composition as that of the polyurethane layer P10. In this case, at least one of the first and second release layers R10 and R20 may include a thermosetting polyurethane having a cross-linking bond. In this case, the content of the thermosetting polyurethane in at least one of the first and second release layers R10 and R20 may be about 80 wt% or more or about 90 wt% or more. According to an embodiment, the content of the thermosetting polyurethane in at least one of the first and second release layers R10 and R20 may be about 80 wt% to 100 wt%.

However, at least one of the first and second release layers R10 and R20 may have a material composition different from that of the polyurethane layer P10. In this case, at least one of the first and second release layers R10 and R20 may further include an inorganic material. When the first release layer R10 includes the inorganic material, the first fine concavo-convex N10 may be formed on the lower surface of the first release layer R10, that is, the first surface S10 by the inorganic material. have. When the second release layer R20 includes the inorganic material, the second fine irregularities N20 may be formed on the upper surface, ie, the second surface S20, of the second release layer R20 by the inorganic material. have.

More specifically, the first release layer R10 may include a base layer made of thermosetting polyurethane and an inorganic material contained in the base layer portion, and the first fine irregularities N10 may be formed by the inorganic material. have. The inorganic material may, for example, have the form of particles (a plurality of particles). Also, the inorganic material may include, for example, at least one of silica, calcium carbonate (CaCO ₃ ), and barium sulfate (BaSO ₄ ). However, the type of inorganic material that can be used in the embodiment of the present invention is not limited to the above-mentioned bar, and may be variously changed. When the first release layer R10 includes the inorganic material, the inorganic material may be referred to as a kind of filler. In this case, the content of the thermosetting polyurethane with respect to the total amount of the thermosetting polyurethane and the inorganic material in the first release layer R10 may be about 60 wt% or more or about 80 wt% or more. For example, the content of the thermosetting polyurethane with respect to the total amount of the thermosetting polyurethane and the inorganic material in the first release layer R10 may be about 60 wt% to about 97 wt%. The content of the thermosetting polyurethane in the first release layer R10 in the region other than the inorganic material may be about 80 wt% to 100 wt%. In the region other than the inorganic material, the first release layer R10 may include thermosetting polyurethane as a main constituent material or may be composed of thermosetting polyurethane. Also, in some cases, the first release layer R10 may include a part (a small amount) of other polymer materials or other additives (eg, a leveling agent, an antifoaming agent, etc.) in addition to the thermosetting polyurethane.

Similar to the first release layer (R10), the second release layer (R20) may include a base layer portion made of thermosetting polyurethane and an inorganic material contained in the base layer portion, and the second fine concavities and convexities (N20) by the inorganic material ) can be formed. The material and shape of the inorganic material may be the same as described above. When the second release layer R20 includes the inorganic material, the inorganic material may be referred to as a kind of filler. In this case, the content of the thermosetting polyurethane with respect to the total amount of the thermosetting polyurethane and the inorganic material in the second release layer R20 may be about 60 wt% or more or about 80 wt% or more. For example, the content of the thermosetting polyurethane with respect to the total amount of the thermosetting polyurethane and the inorganic material in the second release layer R20 may be about 60 wt% to about 97 wt%. The content of the thermosetting polyurethane in the second release layer R20 in the region other than the inorganic material may be about 80 wt% to 100 wt%. In the region other than the inorganic material, the second release layer R20 may include thermosetting polyurethane as a main constituent material or may be composed of thermosetting polyurethane. In addition, in some cases, the second release layer R20 may include a part (a small amount) of another polymer material or other additives (eg, a leveling agent, an antifoaming agent, etc.) in addition to the thermosetting polyurethane.

The release film according to an embodiment of the present invention may have a thickness (total thickness) in the range of about 30 μm to 140 μm. The thickness of the release film may be, for example, about 50 μm to about 120 μm or about 50 μm to about 100 μm. Under this thickness condition, the release film may have excellent mechanical properties suitable for a molding process. The thickness of the polyurethane layer (P10) may be, for example, about 10 µm to 70 µm, the thickness of the first release layer (R10) may be, for example, about 10 µm to 70 µm, and the second release layer ( The thickness of R20) may be, for example, about 10 μm to 70 μm. The thickness of the first release layer R10 may be the same as or similar to the thickness of the second release layer R20 . The thickness of the polyurethane layer P10 may be the same as the thickness of each of the first and second release layers R10 and R20, but may be different. In the latter case, the thickness of the polyurethane layer P10 may be thinner than the thickness of each of the first release layer R10 and the second release layer R20 . When the above thickness conditions are satisfied, it may be advantageous for easy formation (manufacturing) and improvement of mechanical properties of the release film.

Meanwhile, each of the first and second antistatic layers A10 and A20 may have a thickness of about 0.1 μm to 2 μm. When these thickness conditions are satisfied, the first and second antistatic layers A10 and A20 may more effectively exhibit antistatic performance in the release film.

2 is a cross-sectional view showing a release film for a semiconductor package according to another embodiment of the present invention.

2, the release film for a semiconductor package according to this embodiment is a first polyurethane layer (P11) and a second polyurethane layer (P21) and an antistatic layer (intermediate antistatic layer) disposed therebetween (A11) may include In addition, the release film may include a first release layer (R11) disposed on the lower surface of the first polyurethane layer (P11) and a second release layer (R21) disposed on the upper surface of the second polyurethane layer (P21). can The first release layer R11 may have the first fine irregularities N11 for release property on its lower surface (lower surface portion), that is, the first surface S11 . The second release layer R21 may have the second fine concavo-convex N21 for release property on its upper surface (upper surface portion), that is, the second surface S21. The release film can be said to include an 'intermediate body layer' having a structure in which at least one polyurethane layer (P11, P21) and at least one antistatic layer (A11) are laminated, and is formed on the lower surface of the intermediate body layer. It can be said that a first release layer R11 is disposed, and a second release layer R21 is disposed on the upper surface of the intermediate body layer.

The first and second polyurethane layers P11 and P21 may include a thermosetting polyurethane having a cross-linking bond. The content of the thermosetting polyurethane in the first polyurethane layer P11 may be about 80 wt% or more or about 90 wt% or more. In one embodiment, the content of the thermosetting polyurethane in the first polyurethane layer (P11) may be about 80 wt% to 100 wt%. The content of the thermosetting polyurethane in the second polyurethane layer P21 may be about 60 wt% or more or about 80 wt% or more. In an embodiment, the content of the thermosetting polyurethane in the second polyurethane layer P21 may be about 60 wt% to 97 wt%, or about 60 wt% to 100 wt%. Each of the first and second polyurethane layers P11 and P21 may include thermosetting polyurethane as a main constituent material or may be composed of thermosetting polyurethane. In addition, in some cases, at least one of the first and second polyurethane layers P11 and P21 may contain other polymer materials or other additives (eg, leveling agents, antifoaming agents, etc.) in addition to thermosetting polyurethane (a small amount) may include The material composition of each of the first and second polyurethane layers P11 and P21 may be the same as or similar to that of the polyurethane layer P10 of FIG. 1 .

The first release layer R11 may have a first surface S11 on the opposite side of the first polyurethane layer P11, and the first surface S11 is at least a first fine concavo-convex protrusion N11 for improving the releasability. can have In the drawing, the lower surface of the first release layer R11 may be the first surface S11 , and the upper surface of the first release layer R11 may be bonded to the first polyurethane layer P11 . The first release layer R21 may have a second surface S22 opposite to the second polyurethane layer P21, and the second surface S22 is at least a second fine concavo-convex protrusion N22 for improving the releasability. can have In the drawing, the upper surface of the first release layer R21 may be the second surface S22 , and the lower surface of the first release layer R21 may be bonded to the second polyurethane layer P21 . The range conditions of the surface roughness Ra of each of the first surface S11 and the second surface S22 may be the same as or similar to those described for the first surface S10 and the second surface S20 in FIG. 1 . .

At least one of the first and second release layers R11 and R21 may have the same material composition as the polyurethane layers P11 and P21. In this case, at least one of the first and second release layers R11 and R21 may include a thermosetting polyurethane having a cross-linking bond. In this case, the content of the thermosetting polyurethane in at least one of the first and second release layers R11 and R21 may be about 80 wt% or more or about 90 wt% or more. According to an embodiment, the content of the thermosetting polyurethane in at least one of the first and second release layers R11 and R21 may be about 80 wt% to 100 wt%.

However, at least one of the first and second release layers R11 and R21 may have a material composition different from that of the polyurethane layers P11 and P21. In this case, at least one of the first and second release layers R11 and R21 may further include an inorganic material. When the first release layer R11 includes the inorganic material, the first fine concavities and convexities N11 may be formed on the lower surface of the first release layer R11, that is, the first surface S11 by the inorganic material. have. When the second release layer R21 includes the inorganic material, the second fine concavo-convex N21 may be formed on the upper surface, ie, the second surface S21, of the second release layer R21 by the inorganic material. have.

The first release layer R11 may include a base layer made of thermosetting polyurethane and an inorganic material contained in the base layer, and the first fine irregularities N11 may be formed by the inorganic material. The inorganic material may, for example, have the form of particles (a plurality of particles). Also, the inorganic material may include, for example, at least one of silica, calcium carbonate (CaCO ₃ ), and barium sulfate (BaSO ₄ ). However, the type of inorganic material that can be used in the embodiment of the present invention is not limited to the above-mentioned bar, and may be variously changed. When the first release layer R11 includes the inorganic material, the inorganic material may be referred to as a kind of filler. In this case, the content of the thermosetting polyurethane with respect to the total amount of the thermosetting polyurethane and the inorganic material in the first release layer R11 may be about 60 wt% or more or about 80 wt% or more. For example, the content of the thermosetting polyurethane with respect to the total amount of the thermosetting polyurethane and the inorganic material in the first release layer R11 may be about 60 wt% to about 97 wt%. The content of the thermosetting polyurethane in the first release layer R11 in the region other than the inorganic material may be about 80 wt% to 100 wt%. In the region other than the inorganic material, the first release layer R11 may include thermosetting polyurethane as a main constituent material or may be composed of thermosetting polyurethane. Also, in some cases, the first release layer R11 may include a part (a small amount) of another polymer material or other additives (eg, a leveling agent, an antifoaming agent, etc.) in addition to the thermosetting polyurethane.

Similar to the first release layer (R11), the second release layer (R21) may include a base layer portion made of thermosetting polyurethane and an inorganic material contained in the base layer portion, and the second fine irregularities (N21) ) can be formed. The material and shape of the inorganic material may be the same as described above. When the second release layer R21 includes the inorganic material, the inorganic material may be referred to as a kind of filler. In this case, the content of the thermosetting polyurethane with respect to the total amount of the thermosetting polyurethane and the inorganic material in the second release layer R21 may be about 60 wt% or more or about 80 wt% or more. For example, the content of the thermosetting polyurethane with respect to the total amount of the thermosetting polyurethane and the inorganic material in the second release layer R21 may be about 60 wt% to about 97 wt%. The content of the thermosetting polyurethane in the second release layer R21 in the region other than the inorganic material may be about 80 wt% to 100 wt%. In the region other than the inorganic material, the second release layer R21 may include thermosetting polyurethane as a main constituent material or may be composed of thermosetting polyurethane. Also, in some cases, the second release layer R21 may include a part (a small amount) of another polymer material or other additives (eg, a leveling agent, an antifoaming agent, etc.) other than the thermosetting polyurethane.

Meanwhile, the antistatic layer A11 may have the same or similar material composition to the first and second antistatic layers A10 and A20 of FIG. 1 . That is, the antistatic layer A11 may include a carbon nanotube (CNT) as an antistatic material. A plurality (a large amount) of CNTs may be contained in the antistatic layer A11, and the plurality of CNTs may at least partially form a network structure. The content of the CNT in the antistatic layer (A11) may be about 30 to 90 wt%. In addition, the CNT may be a multi-walled CNT (MWCNT). This antistatic layer (A11) can maintain excellent antistatic performance even at a high elongation (elongation) of the release film.

In addition, the antistatic layer A11 may further include a predetermined polymer material serving as an adhesive or the like. The polymer material may include, for example, silicone. The silicone may be, for example, hybrid silicone. In addition, the antistatic layer A11 may further include a polymer conductor material such as PEDOT:PSS. When the silicon is applied to the antistatic layer (A11), the content may be about 5 to 30 wt%. When the polymer conductor material such as PEDOT:PSS is applied to the antistatic layer A11, the content may be about 5 to 65 wt%.

In the embodiment of FIG. 2 , the total thickness of the release film and the thickness ranges of the respective layer portions P11/P21, A11, and R11/R21 may be the same as or similar to those described for the release film of FIG. 1 . That is, the release film of FIG. 2 may have a thickness (total thickness) in the range of about 30 to 140 μm. The thickness of each of the first and second polyurethane layers P11 and P21 may be, for example, about 10 μm to 70 μm, and the thickness of each of the first and second release layers R11 and R21 is, for example, about It may be about 10 μm to about 70 μm, and the thickness of the antistatic layer A11 may be, for example, about 0.1 μm to about 2 μm.

3A to 3C are cross-sectional views illustrating a method of manufacturing a release film for a semiconductor package according to an embodiment of the present invention.

Referring to FIG. 3A , a polyurethane layer P10 including a thermosetting polyurethane having cross-linking may be provided. The polyurethane layer P10 may be formed from a solution for forming a polyurethane. The polyurethane forming solution may be applied on a predetermined base layer (not shown) or a carrier film (not shown), and a cured polyurethane layer P10 may be formed from the applied polyurethane forming solution. Accordingly, the polyurethane layer P10 may be disposed on a predetermined base layer (not shown) or a carrier film (not shown). The base layer or the carrier film may be easily peeled off from the polyurethane layer (P10).

Although not shown in FIG. 3A , a first release layer (R10 of FIG. 3B ) having first fine irregularities for release property may be provided on one surface, and a second release layer having second fine irregularities for release property on one surface. A layer (R20 in Fig. 3c) may be provided.

Referring to FIG. 3b , a first release layer R10 is formed on any one of the lower surface and upper surface of the polyurethane layer P10, for example, on the lower surface of the drawing, the polyurethane layer P10 and the first release layer R10. ), the first release layer R10 may be formed with the first antistatic layer A10 interposed therebetween. For example, the first antistatic layer A10 may be formed by a coating method using an antistatic coating solution. That is, by coating the antistatic coating solution on the lower surface of the polyurethane layer (P10) or the upper surface of the first release layer (R10) and drying or curing the coated antistatic coating solution under given conditions, the first antistatic layer (A10) can form. Here, the antistatic coating solution may include a carbon nanotube (CNT). At this time, the content of CNT in the antistatic coating solution may be about 0.1 wt% to about 2 wt%. In addition, the antistatic coating solution may further include silicone (eg, hybrid silicone) that can be used as an adhesive in addition to CNT, PEDOT:PSS as a polymer conductor, and ethyl alcohol and isopropyl alcohol as solvents. . In this case, the content of the silicon in the antistatic coating solution may be about 0.1 wt% to about 0.5 wt%, the content of PEDOT:PSS may be about 0.1 wt% to about 2 wt%, and the content of ethyl alcohol is It may be about 20 wt% to about 40 wt%, and the content of the isopropyl alcohol may be about 30 wt% to about 75 wt%. However, the use of a polymer conductor such as PEDOT:PSS may be optional, the silicone may be replaced with another polymer, and the type of solvent may be different.

The first antistatic layer A10 may be formed by a coating method using a micro-gravure coater or a direct gravure coater. In the case of using a micro-gravure coater or a direct gravure coater, it may be advantageous to secure excellent coating properties. However, depending on the case, the type of coating equipment may be different.

The first release layer R10 may be formed on a predetermined base layer (not shown) or a carrier film (not shown). For example, the base layer may be a 'matte film'. The matte film is a matte-treated film, wherein the matte treatment may refer to a matte treatment for forming fine concavities and convexities on the surface. The mat film may be, for example, a polyethylene terephthalate (PET) film, but the material of the mat film is not limited thereto and may vary. More specifically, when a polymer-forming solution is applied on the mat-treated surface of the mat film and a cured first release layer (R10) is formed therefrom, the first release layer (R10) bonded to the mat film ) may be formed on the first surface S10 of the first fine irregularities (N10). It can be said that the shape of the mat-treated surface of the mat film is transferred to the first surface S10 of the first release layer R10. The polymer-forming solution may include, for example, a urethane-based source material, a solvent, and a curing agent. However, the first release layer R10 may not be formed on the mat film. For example, the first fine irregularities N10 of the first release layer R10 may be formed of an inorganic material included in the first release layer R10 .

Referring to FIG. 3C , a second release layer R20 is formed on the other one of the lower surface and upper surface of the polyurethane layer P10, for example, the upper surface in the drawing, the polyurethane layer P10 and the second release layer R20 ), the second release layer R20 may be formed with the second antistatic layer A20 interposed therebetween.

For example, the second antistatic layer A20 may be formed by a coating method using an antistatic coating solution. That is, by coating the antistatic coating solution on the upper surface of the polyurethane layer (P10) or the lower surface of the second release layer (R20) and drying or curing the coated antistatic coating solution under given conditions, the second antistatic layer (A20) can form. The antistatic coating solution may include CNTs. A specific method of forming the second antistatic layer (A20) and the composition of the antistatic coating solution may be the same as or similar to those described with respect to the first antistatic layer (A10) in FIG. 3B above.

The second release layer R20 may be formed on a predetermined base layer (not shown) or a carrier film (not shown). For example, the base layer may be a 'matte film'. When a polymer-forming solution is applied on the mat-treated surface of the mat film and a cured second release layer (R20) is formed therefrom, the second surface of the second release layer (R20) bonded to the mat film ( The second fine irregularities N20 may be formed in S20 . The polymer-forming solution may include, for example, a urethane-based source material, a solvent, and a curing agent. However, the second release layer R20 may not be formed on the mat film. For example, the second fine irregularities N20 of the second release layer R20 may be formed of an inorganic material included in the second release layer R20 .

At least one of the first and second release layers R10 and R20 may have the same material composition as that of the polyurethane layer P10. In this case, at least one of the first and second release layers R10 and R20 may include a thermosetting polyurethane having a cross-linking bond. However, at least one of the first and second release layers R10 and R20 may have a material composition different from that of the polyurethane layer P10. In this case, at least one of the first and second release layers R10 and R20 may further include an inorganic material. When the first release layer R10 includes the inorganic material, the first fine concavo-convex N10 may be formed on the lower surface of the first release layer R10, that is, the first surface S10 by the inorganic material. have. When the second release layer R20 includes the inorganic material, the second fine irregularities N20 may be formed on the upper surface, ie, the second surface S20, of the second release layer R20 by the inorganic material. have. The inorganic material may, for example, have the form of particles (a plurality of particles). Also, the inorganic material may include, for example, at least one of silica, calcium carbonate (CaCO ₃ ), and barium sulfate (BaSO ₄ ). At this time, the solution for forming the polymer used to form the first release layer (R10) or the second release layer (R20) is a solution in which the inorganic material is mixed with the solution for forming the polyurethane for forming the polyurethane layer (P10). It may be a solution. When at least one of the first and second release layers R10 and R20 includes the inorganic material, a detailed configuration may be the same as that described in FIG. 1 , and thus a repeated description thereof will be omitted.

4A and 4B are cross-sectional views illustrating a method of manufacturing a release film for a semiconductor package according to another embodiment of the present invention.

Referring to FIG. 4A , a polyurethane layer P10 including a thermosetting polyurethane having cross-linking may be provided. The polyurethane layer P10 may be formed from a solution for forming a polyurethane. Then, a first antistatic layer (A10) and a second antistatic layer (A20) may be formed on the lower and upper surfaces of the polyurethane layer (P10), respectively. A specific method of forming the first and second antistatic layers A10 and A20 and a material composition thereof may be the same as described above.

Referring to FIG. 4B , a first release layer R10 may be formed on a lower surface of the first antistatic layer A10 . In addition, a second release layer R20 may be formed on the upper surface of the second antistatic layer A20. Here, the term 'formation' may be a term encompassing the concepts of 'application', 'coating', 'bonding' or 'stacking'. The terms 'application', 'coating', 'bonding', or 'laminated' may be used interchangeably and have the same meaning unless specifically used, and the present invention is not limited by this term. The concept of terms may be applied throughout this specification. The first release layer R10 may have the first fine concavities and convexities N10 for release property on a surface opposite to the surface in contact with the first antistatic layer A10 , that is, on the first surface S10 . The second release layer R20 may have second fine irregularities N20 for release property on a surface opposite to the surface in contact with the second antistatic layer A20 , that is, on the second surface S20 .

At least one of the first and second release layers R10 and R20 may have the same material composition as that of the polyurethane layer P10. In this case, at least one of the first and second release layers R10 and R20 may include a thermosetting polyurethane having a cross-linking bond. However, at least one of the first and second release layers R10 and R20 may have a material composition different from that of the polyurethane layer P10. In this case, at least one of the first and second release layers R10 and R20 may further include an inorganic material. When at least one of the first and second release layers R10 and R20 includes the inorganic material, a specific configuration may be the same as described above.

Although the method of manufacturing the release film of FIG. 1 has been specifically described in FIGS. 3A to 3C and FIGS. 4A and 4B , this is exemplary and may be variously modified in some cases.

5A to 5D are cross-sectional views illustrating a method of manufacturing a release film for a semiconductor package according to another embodiment of the present invention.

Referring to FIG. 5A , a first release layer R11 and a first polyurethane layer P11 bonded thereto may be provided. For example, after forming a first release layer (R11) on a first mat film (not shown), a polyurethane-forming solution is applied on one surface of the first release layer (R11) and cured to form the first A polyurethane layer P11 may be formed. In some cases, after forming the first polyurethane layer P11 first, the first release layer R11 may be formed on one surface of the first polyurethane layer P11. The first release layer R11 may have the same material composition as the first polyurethane layer P11, but may have a different material composition. In the latter case, the first release layer R11 may include an inorganic material as described above. The first release layer R11 may have the first fine concavities and convexities N11 on the surface opposite to the surface in contact with the first polyurethane layer P11 , that is, on the first surface S11 .

Referring to FIG. 5B , a second release layer R21 and a second polyurethane layer P21 bonded thereto may be provided. For example, after forming the second release layer (R21) on the second mat film (not shown), a polyurethane-forming solution is applied on one surface of the second release layer (R21) and cured to make the second release layer (R21). A polyurethane layer P21 may be formed. In some cases, after forming the second polyurethane layer P21 first, the second release layer R21 may be formed on one surface of the second polyurethane layer P21. The second release layer R21 may have the same material composition as the second polyurethane layer P21, but may have a different material composition. In the latter case, the second release layer R21 may include an inorganic material as described above. The second release layer R21 may have the second fine concavities and convexities N21 on the surface opposite to the surface in contact with the second polyurethane layer P21 , that is, on the second surface S21 .

Referring to FIG. 5C , an antistatic layer A11 may be formed on one surface (upper surface in the drawing) of the first polyurethane layer P11 described in FIG. 5A . A specific method of forming the antistatic layer A11 may be the same as or similar to that described above.

Referring to FIG. 5D , the first polyurethane layer P11 and the second polyurethane layer P21 described in FIG. 5B may be bonded with the antistatic layer A11 interposed therebetween. As a result, the release film according to the embodiment as described with reference to FIG. 2 may be manufactured.

6A to 6C are cross-sectional views illustrating a method of manufacturing a release film for a semiconductor package according to another embodiment of the present invention.

Referring to FIG. 6A , the first and second polyurethane layers P11 and P21 including thermosetting polyurethane having a cross-linkage may be provided, and one surface of the first polyurethane layer P11 (upper surface in the drawing) And one surface (lower surface in the drawing) of the second polyurethane layer (P21) is bonded to each other, and the first and second polyurethane layers (P11, P21) are interposed between the first and second polyurethane layers (A11). Two polyurethane layers (P11, P21) can be bonded to each other. Here, a specific method of forming the antistatic layer A11 may be the same as or similar to that described above.

Referring to FIG. 6B , a first release layer R11 may be formed on the other surface (lower surface in the drawing) of the first polyurethane layer P11 . The first release layer R11 may have the first fine concavities and convexities N11 on the surface opposite to the surface in contact with the first polyurethane layer P11 , that is, on the first surface S11 . The first release layer R11 may have the same material composition as the first polyurethane layer P11 or may have a different material composition. In the latter case, the first release layer R11 may include the aforementioned inorganic material.

Referring to FIG. 6C , a second release layer R21 may be formed on the other surface (upper surface in the drawing) of the second polyurethane layer P21 . The second release layer R21 may have the second fine concavities and convexities N21 on the surface opposite to the surface in contact with the second polyurethane layer P21 , that is, on the second surface S21 . The second release layer R21 may have the same material composition as the second polyurethane layer P21 or may have a different material composition. In the latter case, the second release layer R21 may include the aforementioned inorganic material.

Although the method of manufacturing the release film of FIG. 2 has been specifically described in FIGS. 5A to 5D and 6A to 6C , this is exemplary and may be variously modified in some cases.

Hereinafter, the manufacturing process of the polyurethane layer that can be applied to the manufacturing method of the release film for a semiconductor package according to embodiments of the present invention will be described in more detail.

The number average molecular weight (or weight average molecular weight) of the polyurethane resin used in the embodiment of the present invention may be about 50,000 to 500,000. Urethane (polyurethane) can be obtained by reaction of polyol and isocyanate, and can be prepared by controlling the reaction rate and molecular weight using a catalyst.

As the polyol, one or a mixture of two or more products having a molecular weight of about 500 to 7000 may be used as a raw material. As the ether-based polyol, polypropylene glycol, modified polypropylene glycol, and polytetramethylene glycol (PTMG) may be used. As the polyester-based polyol, polyethylene glycol having a molecular weight in the range of about 500 to 7000, adipate-based polyester polyol, which is a polycarbonate-based polycondensation system, and a ring-opening polymerization-based lactone-based polyol may be used. . In addition, one or two or more of polybutadiene glycol and acryl-based polyol may be mixed and used. However, the above materials are exemplary, and the present application is not limited thereto.

As the isocyanate material, various diisocyanate-based materials may be used. For example, PPDI as p-phenylene diisocyanate with a molecular weight of 160.1, TDI including its isomer as toluene-diisocyanate with a molecular weight of 174.2, NDI as 1,5-naphthalene diisocyanate with a molecular weight of 210.2, HDI as 1,6-hexamethylene diisocyanate with a molecular weight of 168.2 , MDI as 4,4'-diphenylmethane diisocyanate with a molecular weight of 250.3, IPDI as isoporon diisocyanate with a molecular weight of 222.3, and H12MDI as cyclohexylmethane diisocyanate with a molecular weight of 262 may be used. However, the above materials are exemplary, and the present application is not limited thereto.

In addition, in addition to the polyol and isocyanate, a chain extender material may be further used. The chain extender may serve to increase the molecular weight of the polyurethane and impart various functionalities. One to two or more of the chain extenders may be mixed and used. As the chain extender, ethylene glycol-based material, propylene glycol-based material, butadiene glycol-based material, polyhydric alcohol including silicone, polyhydric alcohol including fluorine, etc. may be used. However, the above materials are exemplary, and the present application is not limited thereto.

As the catalyst, various organic tin-based materials and organic bismuth-based materials may be used. The organotin-based material (organotin-based compound) may include, for example, dibutyltin dilaurate, stannous octoate, dibutyltin diacetate, and dibutyltin dimercaptide. where dibutyltin dilaurate is (CH ₃ CH ₂ CH ₂ CH ₂ ) ₂ Sn[CH ₃ (CH ₂ ) ₁₀ COO] ₂ , stannous octoate is Sn[C ₇ H ₁₅ COO] ₂ , and dibutyltin diacetate is (CH ₃ CH ₂ CH ₂ CH ₂ ) ₂ Sn[CH ₃ COO] ₂ and dibutyltin dimercaptide is (CH ₃ CH ₂ CH ₂ CH ₂ ) ₂ Sn[SC ₁₂ H ₂₅ ]. The organic bismuth-based material (organic bismuth-based compound) may have various molecular weights, and may include, for example, a carboxylate-based catalyst material containing bismuth. Here, the carboxylate-based catalyst material may contain about 9% to about 45% of bismuth. However, the above materials are exemplary, and the present application is not limited thereto.

As a solvent for making a polyurethane resin solution, for example, DMF (dimethylformamide), DEF (diethylformamide), DMSO (dimethylsulfoxaide), DMAC (dimethylacetamide), toluene, ethyl acetate (EA), methyl ethyl ketone, including various Acetone solvents and the like can be used. However, the above materials are exemplary, and the present application is not limited thereto.

After preparing a resin solution for preparing polyurethane in which the polyol, isocyanate, and solvent are mixed, a polymer cured product having various crosslinking densities is formed by reaction using a melamine-based curing agent, its catalyst, and an isocyanate-based curing agent polymerized with various molecular weights. can do. In this case, a curing method by heat may be applied.

The composition of the curable polyurethane that can be applied to an embodiment of the present invention will be described as follows.

The polyurethane composition includes a polyester polyol (eg, molecular weight 500 to 7,000), polyether polyol (eg molecular weight 200 to 3,000) or polycarbonate polyol (eg, molecular weight 500 to 8,000) as a first material for the urethane reaction. Polyol such as may be applied, and an isocyanate-based material may be applied as a second material for the urethane reaction. As the isocyanate-based material, various isocyanate types containing a yellowing benzene-ring and various isocyanates including hexamethylene-based, isophorone-based and cyclohexylmethane-based non-yellowing modified isocyanates can be used. In addition, a chain extender may be further used to increase the molecular weight of the polyurethane. As the chain extender, ethylene glycol-based materials, propylene glycol-based materials, butadiene glycol-based materials, polyhydric alcohols including silicone, polyhydric alcohols including fluorine, etc. may be used, and the chain extender is reacted with urethane It is possible to increase the molecular weight of the polyurethane by participating in it.

As other additives, a leveling agent, an antifoaming agent, a curing agent, and the like may be further used. As the leveling agent, a silicone-based, fluorine-based or non-silicone-based modified polyether-based leveling agent may be used, and the leveling agent may be used in a mixture of about 0.1 wt% to 5 wt%. The antifoaming agent is for a defoaming function, for example, a silicone-based or non-silicone-based antifoaming agent may be used. The antifoaming agent may be used in a mixture of about 0.1 wt% to 5 wt%. In addition, as a curing agent for the curing reaction of the prepared polyurethane, a melamine-based curing agent and an isocyanate-based curing agent polymerized with several molecules may be used. In addition, the curing reaction may be accelerated in the presence of an acid catalyst.

In embodiments of the present invention, the formation of the polyurethane layer, the formation of the release layer, the formation of the antistatic layer, etc. may be performed using a roll-to-roll process. In this case, the formation of the polyurethane layer, the formation of the release layer, the formation of the antistatic layer, etc. are performed by a micro-gravure coater, a direct gravure coater, a comma coater, and a slot die. This can be done using any one of the coaters (slot die coater).

7 is a view for explaining an apparatus applicable to a method of manufacturing a release film for a semiconductor package according to an embodiment of the present invention and a manufacturing process using the same.

Referring to FIG. 7 , an apparatus applicable to the method for manufacturing a release film according to an embodiment of the present invention may be a coating apparatus using a roll-to-roll process. For example, the device may include a portion to which a carrier film 10 wound in the form of a roll is mounted, and while pulling one end of the carrier film 10 , the carrier film 10 . It can be configured to transport. The carrier film 10 may be, for example, a matte film, but may be a film other than the matte film. The device includes a coating zone 20 for applying a polymer-forming solution on the transferred carrier film 10, and for removing (drying) the solvent from the applied polymer-forming solution (polymer-forming film). A dry zone 30 and a curing zone 40 for curing the applied polymer-forming solution (polymer-forming film) may be included. Curing in the curing zone 40 may include curing by heat or curing by ultraviolet (UV) light, or both curing by heat and curing by ultraviolet (UV). In addition, the apparatus may include a re-winding zone 50 for rewinding the carrier film 10 on which the coating operation is completed in the form of a roll.

The configuration of the apparatus shown in FIG. 7 is merely exemplary, and may be variously changed. As an example, although FIG. 7 shows and describes the case of curing the film for forming a polymer in the apparatus, the film for forming a polymer is cured by drying the film member in the form of a roll, which has been rewound, under a predetermined drying condition. You can also do it. This can be called 'curing curing' or 'dry curing after winding'. The curing and curing, for example, may be carried out at a temperature of about 50 ℃ drying conditions for 24 hours or more. However, this is exemplary, and drying conditions may be variously changed. The curing method that can be applied when manufacturing the release film according to the embodiment of the present invention may include not only the curing method in the coating device, but also the curing curing (dry curing after winding) method described above.

In addition, in the embodiments of the present invention, as a method of bonding two material layers to each other, a solution for forming the other material layer on one material layer is formed by a coating method, or two material layers are mutually bonded to each other. It may include any combination method and the like.

8 is a view for explaining a molding process of a semiconductor package to which a release film for a semiconductor package is applied according to an embodiment of the present invention.

Referring to FIG. 8 , a molding process of a semiconductor package may be performed using the release film 100 according to an embodiment of the present invention. The molding apparatus may include a first molding tool T10 and a second molding tool T20 facing it. The first molding tool T10 may be a lower molding tool, and the second molding tool T20 may be an upper molding tool.

A predetermined concave portion (cavity region) may be provided in the first molding tool T10 , and the release film 100 may be placed to cover the concave portion. The release film 100 may be sucked so as to be in close contact with the surface of the concave portion by a vacuum adsorption method (ie, a suction method). A substrate 200 having a plurality of semiconductor device units 210 formed thereon may be disposed on a lower surface of the second molding tool T20 . A molding material (eg, EMC) (not shown) may be disposed on a portion of the release film 100 of the concave portion (cavity region). A heating process for melting the molding material and a vacuum compression process for attaching the molten molding material to the side of the semiconductor device unit 210 may be performed.

The release film 100 according to the embodiment of the present invention may have excellent mechanical properties that can withstand high temperature and high pressure conditions without rupture during the molding process of a semiconductor package, and also have excellent releasability (peelability). In particular, since the release film 100 includes a thermosetting material, it may have superior mechanical properties than a conventional release film based on a thermoplastic material. Therefore, the release film 100 according to the embodiment of the present invention may not rupture even under conditions of high temperature and high pressure. In addition, since the release film 100 according to the embodiment of the present invention has low permeability to fume-gas generated during the molding process, mold contamination and productivity decrease due to fume-gas Problems can be avoided.

In addition, the release film 100 according to the embodiment of the present invention can maintain excellent antistatic performance even during a high-temperature process. Even if a portion of the release film 100 is stretched during the semiconductor package molding process, the antistatic performance of the release film 100 may be maintained. Accordingly, it is possible to effectively prevent or suppress problems such as process defects, mold contamination, and damage/destruction of semiconductor devices due to the charging phenomenon during the semiconductor package process. Additionally, since the release film 100 according to the embodiment of the present invention has fine concavities and convexities (refer to N10 and N20 in FIG. 1 ) on its lower surface and upper surface, it may have excellent releasability (peelability).

Therefore, when the release film 100 according to the embodiment of the present invention is used, the defect rate of the semiconductor package can be reduced, productivity can be improved, and the characteristics of the manufactured package can be improved.

Table 1 below summarizes the results of evaluating the resistance (surface resistance) change characteristics and substrate adhesion of the release film by resistance, elongation (elongation), and substrate adhesion after manufacturing the release film having the structure shown in FIG. 1 . At this time, the antistatic layers (A10, A20) are formed using a coating solution containing 1.5 wt% of MWCNT. In Table 1, 'Wet thickness' means the thickness before drying of the antistatic layer (A10, A20) (that is, the thickness of the coated solution), and 'Coating surface resistance' is the resistance (sheet resistance) of the antistatic layer (A10 or A20) (Ω/square). As the resistance of the finished product, the resistance of the initial state and the resistance by elongation (10, 30, 50%) were measured. The notation of the resistance value follows the exponential notation. Here, the resistance is measured using a TREK 152-1 resistance meter.

Table 2 below summarizes the results of evaluating the resistance (surface resistance) change characteristics and substrate adhesion of the release film by resistance, elongation (elongation), and substrate adhesion after manufacturing the release film having the structure shown in FIG. 2 . At this time, the antistatic layer (A11) is formed using a coating solution containing MWCNT as much as 1.5 wt%. In Table 2, 'Wet thickness' means the thickness before drying of the antistatic layer (A11) (that is, the thickness of the coated solution), and 'coating surface resistance' is the resistance (sheet resistance) of the antistatic layer (A11) (Ω/square) ) means As the resistance of the finished product, the resistance of the initial state and the resistance by elongation (10, 30, 50%) were measured. The notation of the resistance value follows the exponential notation. Here, the resistance is measured using a TREK 152-1 resistance meter.

Referring to Table 1 and Table 2 above, when the wet thickness is about 10 μm to 25 μm or about 10 μm to 20 μm in the embodiment of FIG. 1 and the embodiment of FIG. 2, antistatic performance even at high elongation It can be confirmed that it appears sufficiently (ie, the resistance is about 10 ¹² Ω/sq. or less). Therefore, even if the release film according to the embodiment of the present invention is stretched by a high-temperature process, it is possible to maintain excellent antistatic performance. In addition, the release film was also generally excellent (good) adhesion to the substrate.

In the present specification, preferred embodiments of the present invention have been disclosed, and although specific terms are used, these are only used in a general sense to easily explain the technical content of the present invention and help the understanding of the present invention, and to limit the scope of the present invention. It is not meant to be limiting. It will be apparent to those of ordinary skill in the art to which the present invention pertains that other modifications based on the technical spirit of the present invention can be implemented in addition to the embodiments disclosed herein. For those of ordinary skill in the art, the release film for a semiconductor package and its manufacturing method according to the embodiment described with reference to FIGS. 1 to 8 and the manufacturing method thereof, within the scope not departing from the technical spirit of the present invention, variously It will be appreciated that substitutions, modifications and variations are possible. Therefore, the scope of the invention should not be determined by the described embodiments, but should be determined by the technical idea described in the claims.

* Explanation of symbols for the main parts of the drawing *
A10, A11, A20: Antistatic layer P10, P11, P21: Polyurethane layer
N10, N11: 1st fine unevenness N20, N21: 2nd fine uneven projection
R10, R11: first release layer R20, R21: second release layer
S10, S11: first surface S20, S21: second surface
T10: first molding tool T20: second molding tool
10: carrier film 20: coating zone
30: drying zone 40: curing zone
50: rewinding zone 100: release film
200: substrate 210: semiconductor element unit

Claims (24)

A release film for a semiconductor package, comprising:
an intermediate body layer comprising a structure in which at least one polyurethane layer and at least one antistatic layer are laminated;
a first release layer disposed on a lower surface of the intermediate body layer and having first fine concavities and convexities for release property on the lower surface; and
and a second release layer disposed on the upper surface of the intermediate body layer and having second fine concavities and convexities on the upper surface portion for release property,
wherein the at least one polyurethane layer comprises a thermosetting polyurethane having a cross-linkage;
The antistatic layer includes CNT (carbon nanotube),
The content of the CNT in the antistatic layer is 30 wt% to 90 wt%,
The intermediate body layer includes a first polyurethane layer, a second polyurethane layer, and an intermediate antistatic layer disposed between the first polyurethane layer and the second polyurethane layer,
The first polyurethane layer and the second polyurethane layer correspond to the polyurethane layer, the middle antistatic layer is a release film for a semiconductor package corresponding to the antistatic layer. delete delete The method of claim 1,
The CNT is a release film comprising a multi-walled CNT (MWCNT). delete delete The method of claim 1,
The polyurethane layer is a release film having a thickness in the range of 10 μm to 70 μm. 8. The method of claim 1 or 7,
The antistatic layer is a release film having a thickness in the range of 0.1 ㎛ ~ 2 ㎛. The method of claim 1,
The release film is a release film having a thickness in the range of 30 μm to 140 μm. The method of claim 1,
At least one of the first and second release layers is a release film having the same material composition as that of the polyurethane layer. The method of claim 1,
At least one of the first and second release layers is a release film having a material composition different from that of the polyurethane layer. 12. The method of claim 11,
At least one of the first and second release layers includes an inorganic material,
When the first release layer includes the inorganic material, the first fine irregularities are formed on the lower surface of the first release layer by the inorganic material,
When the second release layer includes the inorganic material, a release film in which the second fine irregularities are formed on the upper surface of the second release layer by the inorganic material. delete delete delete delete delete delete providing a first polyurethane layer and a second polyurethane layer comprising a thermosetting polyurethane having a cross-linkage; and
One surface of the first polyurethane layer and one surface of the second polyurethane layer are bonded to each other, and the first polyurethane layer with an antistatic layer interposed between the first polyurethane layer and the second polyurethane layer and bonding the second polyurethane layer to each other,
A first release layer is provided on the other surface of the first polyurethane layer, a second release layer is provided on the other surface of the second polyurethane layer, and the first release layer is a surface in contact with the first polyurethane layer. It has first micro-irregularities for releasability on the opposite surface, and the second release layer has second micro-irregularities for releasability on the opposite surface of the surface in contact with the second polyurethane layer,
The antistatic layer includes CNT (carbon nanotube),
The content of the CNT in the antistatic layer is 30 wt% to 90 wt%,
The first polyurethane layer, the antistatic layer, the second polyurethane layer and the second release layer are sequentially disposed on the first release layer,
The antistatic layer is disposed between the first polyurethane layer and the second polyurethane layer, a method of manufacturing a release film for a semiconductor package. 20. The method of claim 19,
The antistatic layer is a method of manufacturing a release film formed by a coating method using an antistatic coating solution. 21. The method of claim 20,
The antistatic coating solution is a method of producing a release film comprising 0.1 to 2 wt% of CNT (carbon nanotube). 21. The method of claim 20,
The antistatic layer is a micro-gravure coater (micro-gravure coater) or direct gravure coater (direct gravure coater) manufacturing method of a release film formed using a method. 20. The method of claim 19,
At least one of the first release layer and the second release layer has the same material composition as that of the first and second polyurethane layers. 20. The method of claim 19,
At least one of the first release layer and the second release layer is a method of manufacturing a release film having a material composition different from that of the first and second polyurethane layers.

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