CN113998661A - Vacuum packaging device with electric/chemical active metal layer - Google Patents
Vacuum packaging device with electric/chemical active metal layer Download PDFInfo
- Publication number
- CN113998661A CN113998661A CN202111470138.4A CN202111470138A CN113998661A CN 113998661 A CN113998661 A CN 113998661A CN 202111470138 A CN202111470138 A CN 202111470138A CN 113998661 A CN113998661 A CN 113998661A
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- wafer
- metal layer
- metal
- vacuum
- getter
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
A vacuum packaging device with an electric/chemical active metal layer is provided, wherein a sensor chip is formed by bonding an MEMS wafer and a CMOS wafer; two layers of getter metal enable the bonded cavity to be vacuum, the CMOS wafer is formed by a silicon substrate chip and an N well in the CMOS chip on a P-type substrate through ion implantation, and an active region is the main part of a CMOS device; a metal filling part is longitudinally arranged in the CMOS wafer after the back of the silicon substrate is punched, a crystal grain and a sensing or actuating part which are connected with a hole are arranged at the bottom of the metal filling part after the back of the silicon substrate is punched, a passivation layer and a metal layer are sequentially arranged above the CMOS wafer, a metal bonding point is arranged between the metal layer and the MEMS wafer, and an MEMS wafer cavity is arranged in the MEMS wafer. The invention has the advantages that: the thin film getter layer is eliminated, the metal getter layer is used for replacing the function of the thin film getter layer, the thin film getter layer has a conductive function, and the thin film getter layer can also be used as a vertical electrode, so that the process is simpler.
Description
Technical Field
The invention relates to the field of sensors, in particular to a vacuum packaging device with an electrically/chemically active metal layer.
Background
At present, the MEMS wafer getter uses a thin film getter layer, which has a function of absorbing gas only and does not provide any other function.
Disclosure of Invention
The invention aims to cancel a thin film getter layer, replace the function of the thin film getter layer with a metal getter layer, have a conductive function and can also be used as a vertical electrode, so that the process is simpler, and particularly provides a vacuum packaging device with an electrically/chemically active metal layer.
The invention provides a vacuum packaging device with an electrical property/chemical activity metal layer, which is characterized in that: the vacuum packaging device with the electrical/chemical active metal layer comprises a CMOS wafer 1, a metal filling part 2 after the back of a silicon substrate is punched, a passivation layer 3, a metal layer 4, a metal bonding point 5, an MEMS wafer 6, an MEMS wafer cavity 7, a sensing or actuating part 8, an active area 9, an N well 10 in a CMOS chip, a crystal grain 11 connected with a hole and two layers of getter metal 12;
the sensor chip is formed by bonding an MEMS wafer 6 and a CMOS wafer 1; two layers of getter metal 12 to make the bonded cavity become vacuum, the CMOS wafer is formed by ion implantation on a P-type substrate by a silicon substrate chip and an N-well 10 in the CMOS chip, and the active region 9 is the main part of the CMOS device;
a silicon substrate back perforation metal filling part 2 is longitudinally arranged in a CMOS wafer 1, a crystal grain 11 and a sensing or actuating part 8 which are connected with holes are arranged at the bottom of the silicon substrate back perforation metal filling part 2, a passivation layer 3 and a metal layer 4 are sequentially arranged above the CMOS wafer 1, a metal bonding point 5 is arranged between the metal layer 4 and an MEMS wafer 6, and an MEMS wafer cavity 7 is arranged in the MEMS wafer 6.
For vacuum sealed devices, the metal layer on the wafer can be used as both an electronic component and a getter element; the electronic component can be an electrical conductor, and can be an inductor or antenna and a getter;
the electronic component can be a capacitive or electrostatic electrode and a getter; the electronic component can be a ground layer or an EMC shield layer, but also a getter;
the electronic element can be a piezoelectric electrode and a getter; the electronic component can be an electrical feedthrough between the vacuum chamber and the external bond pad, and a getter;
for vacuum sealed devices, the metal layer on the wafer can act as both an optical reflector and an IR reflector, and can act as a getter.
The chemically absorptive metal layer can be any metal layer in a multi-layer metal and dielectric stack that can be etched to expose one or more metals.
The metal layer can be partially undercut by an etch exposure to expose the top and bottom surfaces to absorb gases.
Such partially suspended metal layers can form diaphragms or bridges and be perforated to increase their surface area the circuit wafer can be a CMOS, MEMS wafer or a simple multi-metal layer interconnect wafer.
Wafer-to-wafer bonding is performed in vacuum or a vacuum enclosure is formed using a CVD film seal.
One of the metal layers in the circuit wafer is a reactive metal, including titanium, iron, zirconium or an alloy, which will act as a getter and reduce the pressure of the sealed cavity during the vacuum wafer bonding step; the metal layer can be either an electrical conductor layer or an electrode, or can be a getter for absorbing gases.
The getter metal can be the last patterned film on the wafer, or a dielectric passivation etch can expose the reactive metal on the surface or wafer.
The invention has the advantages that:
the vacuum packaging device with the electrically/chemically active metal layer cancels the thin film getter layer, uses the metal getter layer to replace the function of the thin film getter layer, has a conductive function, and can also be used as a vertical electrode, so that the process is simpler.
Drawings
The invention is described in further detail below with reference to the following figures and embodiments:
fig. 1 is a diagram of a vacuum packaged device with an electrically/chemically active metal layer.
Detailed Description
Example 1
The invention provides a vacuum packaging device with an electrical property/chemical activity metal layer, which is characterized in that: the vacuum packaging device with the electrical/chemical active metal layer comprises a CMOS wafer 1, a metal filling part 2 after the back of a silicon substrate is punched, a passivation layer 3, a metal layer 4, a metal bonding point 5, an MEMS wafer 6, an MEMS wafer cavity 7, a sensing or actuating part 8, an active area 9, an N well 10 in a CMOS chip, a crystal grain 11 connected with a hole and two layers of getter metal 12;
the sensor chip is formed by bonding an MEMS wafer 6 and a CMOS wafer 1; two layers of getter metal 12 to make the bonded cavity become vacuum, the CMOS wafer is formed by ion implantation on a P-type substrate by a silicon substrate chip and an N-well 10 in the CMOS chip, and the active region 9 is the main part of the CMOS device;
a silicon substrate back perforation metal filling part 2 is longitudinally arranged in a CMOS wafer 1, a crystal grain 11 and a sensing or actuating part 8 which are connected with holes are arranged at the bottom of the silicon substrate back perforation metal filling part 2, a passivation layer 3 and a metal layer 4 are sequentially arranged above the CMOS wafer 1, a metal bonding point 5 is arranged between the metal layer 4 and an MEMS wafer 6, and an MEMS wafer cavity 7 is arranged in the MEMS wafer 6.
For vacuum sealed devices, the metal layer on the wafer can be used as both an electronic component and a getter element; the electronic component can be an electrical conductor, and can be an inductor or antenna and a getter;
the electronic component can be a capacitive or electrostatic electrode and a getter; the electronic component can be a ground layer or an EMC shield layer, but also a getter;
the electronic element can be a piezoelectric electrode and a getter; the electronic component can be an electrical feedthrough between the vacuum chamber and the external bond pad, and a getter;
for vacuum sealed devices, the metal layer on the wafer can act as both an optical reflector and an IR reflector, and can act as a getter.
The chemically absorptive metal layer can be any metal layer in a multi-layer metal and dielectric stack that can be etched to expose one or more metals.
The metal layer can be partially undercut by an etch exposure to expose the top and bottom surfaces to absorb gases.
Such partially suspended metal layers can form diaphragms or bridges and be perforated to increase their surface area the circuit wafer can be a CMOS, MEMS wafer or a simple multi-metal layer interconnect wafer.
Wafer-to-wafer bonding is performed in vacuum or a vacuum enclosure is formed using a CVD film seal.
One of the metal layers in the circuit wafer is a reactive metal, including titanium, iron, zirconium or an alloy, which will act as a getter and reduce the pressure of the sealed cavity during the vacuum wafer bonding step; the metal layer can be either an electrical conductor layer or an electrode, or can be a getter for absorbing gases.
The getter metal can be the last patterned film on the wafer, or a dielectric passivation etch can expose the reactive metal on the surface or wafer.
Example 2
The invention provides a vacuum packaging device with an electrical property/chemical activity metal layer, which is characterized in that: the vacuum packaging device with the electrical/chemical active metal layer comprises a CMOS wafer 1, a metal filling part 2 after the back of a silicon substrate is punched, a passivation layer 3, a metal layer 4, a metal bonding point 5, an MEMS wafer 6, an MEMS wafer cavity 7, a sensing or actuating part 8, an active area 9, an N well 10 in a CMOS chip, a crystal grain 11 connected with a hole and two layers of getter metal 12;
the sensor chip is formed by bonding an MEMS wafer 6 and a CMOS wafer 1; two layers of getter metal 12 to make the bonded cavity become vacuum, the CMOS wafer is formed by ion implantation on a P-type substrate by a silicon substrate chip and an N-well 10 in the CMOS chip, and the active region 9 is the main part of the CMOS device;
a silicon substrate back perforation metal filling part 2 is longitudinally arranged in a CMOS wafer 1, a crystal grain 11 and a sensing or actuating part 8 which are connected with holes are arranged at the bottom of the silicon substrate back perforation metal filling part 2, a passivation layer 3 and a metal layer 4 are sequentially arranged above the CMOS wafer 1, a metal bonding point 5 is arranged between the metal layer 4 and an MEMS wafer 6, and an MEMS wafer cavity 7 is arranged in the MEMS wafer 6.
For vacuum sealed devices, the metal layer on the wafer can be used as both an electronic component and a getter element; the electronic component can be an electrical conductor, and can be an inductor or antenna and a getter;
wafer-to-wafer bonding is performed in vacuum or a vacuum enclosure is formed using a CVD film seal.
One of the metal layers in the circuit wafer is a reactive metal, including titanium, iron, zirconium or an alloy, which will act as a getter and reduce the pressure of the sealed cavity during the vacuum wafer bonding step; the metal layer can be either an electrical conductor layer or an electrode, or can be a getter for absorbing gases.
The getter metal can be the last patterned film on the wafer, or a dielectric passivation etch can expose the reactive metal on the surface or wafer.
The invention is not the best known technology.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (9)
1. A vacuum packaged device with an electrically/chemically active metal layer, comprising: the vacuum packaging device with the electrically/chemically active metal layer comprises a CMOS wafer (1), a metal filling part (2) after the back of a silicon substrate is perforated, a passivation layer (3), a metal layer (4), a metal bonding point (5), an MEMS wafer (6), an MEMS wafer cavity (7), a sensing or actuating part (8), an active area (9), an N well (10) in the CMOS chip, a crystal grain (11) connected with the hole and two layers of getter metal (12);
the sensor chip is formed by bonding an MEMS wafer (6) and a CMOS wafer (1); two layers of getter metal (12) enable the bonded cavity to become vacuum, the CMOS wafer is formed by a silicon substrate chip and an N well (10) in the CMOS chip on a P-type substrate through ion implantation, and an active region (9) is the main part of a CMOS device;
a silicon substrate back perforation back metal filling part (2) is longitudinally arranged in a CMOS wafer (1), a crystal grain (11) and a sensing or actuating component (8) which are connected with holes are arranged at the bottom of the silicon substrate back perforation back metal filling part (2), a passivation layer (3) and a metal layer (4) are sequentially arranged above the CMOS wafer (1), a metal bonding point (5) is arranged between the metal layer (4) and an MEMS wafer (6), and an MEMS wafer cavity (7) is arranged in the MEMS wafer (6).
2. Vacuum-encapsulated device with an electrically/chemically active metal layer according to claim 1, characterized in that:
for vacuum sealed devices, the metal layer on the wafer can be used as both an electronic component and a getter element; the electronic component can be an electrical conductor and can be an inductor or antenna and a getter.
3. Vacuum-encapsulated device with an electrically/chemically active metal layer according to claim 1, characterized in that: the electronic component can be a capacitive or electrostatic electrode and a getter; the electronic component can be a ground layer or an EMC shield layer, but also a getter; the electronic element can be a piezoelectric electrode and a getter; the electronic component can be an electrical feedthrough between the vacuum chamber and the external bond pad, and a getter.
4. Vacuum-encapsulated device with an electrically/chemically active metal layer according to claim 1, characterized in that: for vacuum sealed devices, the metal layer on the wafer can act as both an optical reflector and an IR reflector, and can act as a getter.
5. Vacuum-encapsulated device with an electrically/chemically active metal layer according to claim 1, characterized in that: the chemically absorptive metal layer can be any metal layer in a multi-layer metal and dielectric stack that can be etched to expose one or more metals.
6. Vacuum-encapsulated device with an electrically/chemically active metal layer according to claim 1, characterized in that: the circuit wafer can be a CMOS, MEMS wafer or a simple multi-metal layer interconnect wafer.
7. Vacuum-encapsulated device with an electrically/chemically active metal layer according to claim 1, characterized in that: wafer-to-wafer bonding is performed in vacuum or a vacuum enclosure is formed using a CVD film seal.
8. Vacuum-encapsulated device with an electrically/chemically active metal layer according to claim 1, characterized in that: one of the metal layers in the circuit wafer is a reactive metal, including titanium, iron, zirconium or an alloy, which will act as a getter and reduce the pressure of the sealed cavity during the vacuum wafer bonding step; the metal layer can be either an electrical conductor layer or an electrode, or can be a getter for absorbing gases.
9. Vacuum-encapsulated device with an electrically/chemically active metal layer according to claim 1, characterized in that: the getter metal can be the last patterned film on the wafer, or a dielectric passivation etch can expose the reactive metal on the surface or wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111470138.4A CN113998661A (en) | 2021-12-03 | 2021-12-03 | Vacuum packaging device with electric/chemical active metal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111470138.4A CN113998661A (en) | 2021-12-03 | 2021-12-03 | Vacuum packaging device with electric/chemical active metal layer |
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| Publication Number | Publication Date |
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| CN113998661A true CN113998661A (en) | 2022-02-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111470138.4A Pending CN113998661A (en) | 2021-12-03 | 2021-12-03 | Vacuum packaging device with electric/chemical active metal layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115377015A (en) * | 2022-08-29 | 2022-11-22 | 北京超材信息科技有限公司 | Packaging structure of electronic device and manufacturing method |
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2021
- 2021-12-03 CN CN202111470138.4A patent/CN113998661A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115377015A (en) * | 2022-08-29 | 2022-11-22 | 北京超材信息科技有限公司 | Packaging structure of electronic device and manufacturing method |
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