CN109809357A - A kind of wafer-level packaging method of MEMS device - Google Patents
A kind of wafer-level packaging method of MEMS device Download PDFInfo
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- CN109809357A CN109809357A CN201711161185.4A CN201711161185A CN109809357A CN 109809357 A CN109809357 A CN 109809357A CN 201711161185 A CN201711161185 A CN 201711161185A CN 109809357 A CN109809357 A CN 109809357A
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Abstract
This application discloses a kind of wafer-level packaging methods of MEMS device.Firstly, making MEMS device in MEMS wafer, encapsulating structure is adhered to by interim bonding material on carrying wafer.Secondly, the encapsulating structure carried on wafer is bonded together with MEMS wafer, the encapsulating structure is together with MEMS wafer by the closed encirclement of MEMS device.Again, it removes the interim bonding material and is mutually removed to which wafer will be carried with encapsulating structure, complete the encapsulation to MEMS device.The application makes the manufacturing process of encapsulating structure will not influence or damage MEMS device, reduces damage probability of the MEMS device in encapsulation process, and optional wider range of encapsulating material reduces packaging cost.
Description
Technical field
This application involves a kind of wafer-level packaging (WLP, Wafer Level Package) methods, more particularly to one kind
MEMS(Micro Electro Mechanical System, MEMS) device wafer-level packaging method.
Background technique
MEMS device is a kind of microelectronic component with mechanical movable structure, for converting electrical signals to displacement, speed
These physical signals can also be converted to electric signal by the physical signals such as degree, vibration, sound wave.Mechanical movable in MEMS device
Structure is usually at several microns between several hundred microns.Under the geometric scale, mechanical movable structure be easy by dust in environment,
The interference and destruction of moisture and volatile chemical.For example, the biggish dust deposit of particle arrives MEMS device in environment
In the gap of mechanical movable structure, cause the failure of mechanical movable structure.For another example, machinery of the moisture in environment in MEMS device
Condensation, volatilization on movable structure can cause being adhered for mechanical movable structure.For another example, MEMS device to specific gas in environment at
The absorption divided, causes change and/or sensitivity drift of MEMS device resonance frequency etc..Therefore, MEMS device is sealed
Dress, to be isolated, protect its mechanical movable structure free from the influence of the external environment.
The packaging method of traditional MEMS device belongs to wafer-level package (CSP, Chip Scale Package), has encapsulated
Product after is as shown in Figure 1.Chip-scale packaging method mainly uses metal cover and ceramic substrate (also referred to as shell) to MEMS
Device is packaged.Since technique is incompatible, MEMS chip, metal cover, ceramic substrate need single in respective processing factory
Solely processing.MEMS chip includes silicon substrate and the MEMS device formed thereon, passes through patch, wire bonding, sealing cap technique etc. pair
Every MEMS chip carries out independent encapsulation, is sealed in MEMS chip and is formed by cavity by metal cover and ceramic substrate
It is interior.Chip-scale packaging method has the shortcomings that lower yield rate, higher cost, the size of final products are larger.
The shortcomings that for wafer-level package technology, Wafer level packaging comes into being.Wafer level packaging is to whole
It after wafer (wafer) is packaged test, then cuts to obtain the technology of single finished product chip, chip (chip) ruler after encapsulation
It is very little completely the same with bare die (die) size.According to different technique, the wafer-level packaging method of MEMS device can be attributed to two
Class, the first kind are using wafer bonding (wafer bonding) method, and the second class is to deposit (thin film using film
Deposition) method.Wafer-level packaging method has many advantages, such as that cost is relatively low, the size of final products is smaller.
It is as shown in Figure 2 using the wafer-level packaging finished product of wafer bonding method.This method etches on sealing cap wafer first
Required cavity out, and deposit the special material for being used to form sealing ring；Then the wafers keys such as gold Jin Gongjing, aluminium germanium eutectic are utilized
Sealing cap wafer with cavity is sealed in MEMS device to together with the wafer bonding where MEMS device by the method for conjunction
In cavity.Subsequently through TSV(through silicon via), device wire is connected to outside by wiring technique again for wire bonding etc..This encapsulation
Method needs to make the special material for being used to form sealing ring on chip structure, and the width of sealing ring is usually at 50~200 μm
Between, the chip size of MEMS device can be increased significantly, increase its packaging cost.
It is as shown in Figure 3 using the wafer-level packaging finished product of membrane deposition method.This method is sunk first above MEMS device
Product sacrificial layer；Then in sacrificial layer disposed thereon supporting layer, and relief hole is etched on supporting layer；Subsequently through dry etching
Or wet corrosion technique removes sacrificial layer, forms the cavity for accommodating MEMS device；Finally deposition sealant carries out relief hole
The sealing to relief hole is completed in filling, is sealed in MEMS device in cavity.It is routed skill again subsequently through TSV, wire bonding etc.
Device wire is connected to outside by art.For this packaging method when filling relief hole, being partially filled with that material is possible to can be by releasing
Discharge hole is deposited to be formed in MEMS device and be stained, and causes the failure of MEMS device.
The Chinese invention patent application that application publication number is CN105565255A, data of publication of application is on May 11st, 2016
" wafer-class encapsulation of MEMS " discloses a kind of scheme using two layers of polymers film manufacture MEMS package structure.The program be
The encapsulating structure formed by two layers of polymers film is manufactured on wafer where MEMS device, on the one hand entire technical process can be very big
Ground increases the damage probability of MEMS device, on the other hand for reduce damage to MEMS device certainly will material to polymer film with
And release process has more stringent limitation.
Summary of the invention
The technical problem to be solved by the application is to provide a kind of wafer-level packaging methods of MEMS device, need as far as possible
Damage probability of the encapsulation process to MEMS device is reduced, while increasing material and the process choice face of encapsulating structure.
In order to solve the above technical problems, the wafer-level packaging method of the application MEMS device are as follows: firstly, in MEMS wafer
MEMS device is made, encapsulating structure is adhered to by interim bonding material on carrying wafer.Secondly, the encapsulation on wafer will be carried
Structure is bonded together with MEMS wafer, and the encapsulating structure is together with MEMS wafer by the closed encirclement of MEMS device.Again, it goes
It is mutually removed to which wafer will be carried with encapsulating structure except the interim bonding material, completes the encapsulation to MEMS device.
Preferably, the carrying wafer is monocrystalline silicon or glass.Above-mentioned wafer material can satisfy carrying encapsulating structure
Demand, and have the advantages that at low cost.
Preferably, the interim bonding material have temperature-sensitive, it is photosensitive or be easy to by chemical agent corrode characteristic, so as to
Effectively encapsulating structure is stripped down from carrying wafer in during subsequent technique.This is provided for interim bonding material
More wide in range selection, convenient for selecting interim bonding material with their own characteristics in different production environments.
Preferably, the encapsulating structure is organic polymer material.Organic polymer material, which can satisfy, constructs encapsulation knot
The demand of structure, and have the characteristics that bonding temperature is low, temperature budget can be increased for the process of MEMS device.
Further, described includes: in carrying wafer by interim bonding material attachment encapsulating structure on carrying wafer
On successively deposit interim bonding material, the first one polymer, the second one polymer and adhesive layer；In the first one polymer, second
Fairlead and cavity are formed in one polymer and adhesive layer；Fairlead runs through adhesive layer, the second one polymer and the first layers of polymer
Object；Cavity runs through adhesive layer and the second one polymer；Fairlead and cavity collectively form encapsulating structure.This is provided by the present application
Manufacture the first implementation of encapsulating structure.
Further, described includes: in carrying wafer by interim bonding material attachment encapsulating structure on carrying wafer
On successively deposit interim bonding material, the first one polymer and the second one polymer；In the first one polymer and the second layers of polymer
Fairlead and cavity are formed on object；Fairlead runs through the second one polymer and the first one polymer；Cavity runs through the second layers of polymer
Object；Fairlead and cavity collectively form encapsulating structure.This is second of implementation of manufacture encapsulating structure provided by the present application.
Preferably, first one polymer, the second one polymer are epoxy resin, polyimides, SU-8 photoresist, benzene
And the combination of any one or more in cyclobutane, polymethyl methacrylate, dimethyl silicone polymer, pa in synthetic fibre.It is above-mentioned
Organic polymer material can satisfy the demand for constructing encapsulating structure, and provide more wide selection face, so as in difference
Production environment in select encapsulating structure material with their own characteristics.
Further, the described encapsulating structure carried on wafer and MEMS wafer are bonded together includes: by MEMS device
The electrode of part is aligned with the fairlead on encapsulating structure, the sky on cavity and encapsulating structure in MEMS device and MEMS wafer
Chamber alignment；The encapsulating structure carried on wafer is securely connect with MEMS wafer by adhesive layer or the second polymer layer again.This is
The implementation of bonding steps provided by the present application, wherein can be adhesive as jointing material.If second polymer
The adhesion property of layer is sufficient for requiring, and adhesive can also be omitted, directly using the second polymer layer as jointing material.
Further, the encapsulating structure together with MEMS wafer by MEMS device it is closed include: in encapsulating structure
Cavity and MEMS wafer on cavity together form sealing MEMS device closed cavity.The closed cavity is by MEMS crystalline substance
Circle, adhesive layer, the second one polymer, the first one polymer are collectively formed.Alternatively, the closed cavity is by MEMS wafer, the second layer
Polymer, the first one polymer are collectively formed.This is the closed cavity provided by the present application for seal protection MEMS device
Manufacturing step.
Preferably, the depositing operation includes chemical vapor deposition, physical vapour deposition (PVD), spin coating or fitting.This is encapsulation
The specific implementation of process provides alternative technique.
What the application obtained has the technical effect that firstly, MEMS device and encapsulating structure are independently made in two wafers respectively
It completes, this makes the manufacturing process of encapsulating structure will not influence or damage MEMS device.It is then primary by bonding technology again
Property MEMS device is sealingly fitted among encapsulating structure, this makes encapsulation process most simplified to the processing of MEMS wafer and shadow
It rings and minimizes, reduce damage probability of the MEMS device in encapsulation process.Secondly, MEMS wafer has manufactured before encapsulation
At, it is meant that it has been completed release steps, does not further relate to the problem of material corrosion selectivity, therefore the material of encapsulating structure
With optional wider range of technique.Again, encapsulating structure is preferably manufactured by organic polymer, not only reduces packaging cost, and
And the bonding temperature of organic polymer is lower, the temperature budget being effectively increased in MEMS device process.Encapsulating material
It is attached on carrying wafer by interim bonding technology, carrying wafer is reusable, reduces packaging cost.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of the wafer-level package finished product of existing MEMS device.
Fig. 2 is a kind of the schematic diagram of the section structure of the wafer-level packaging finished product of existing MEMS device.
Fig. 3 is the schematic diagram of the section structure of the wafer-level packaging finished product of another existing MEMS device.
Fig. 4 is the flow chart of the embodiment one of the wafer-level packaging method of the application MEMS device.
Fig. 5 A to Fig. 5 G is each step cross-section structure of the embodiment one of the wafer-level packaging method of the application MEMS device
Schematic diagram, wherein Fig. 5 G is the schematic diagram of the section structure of the wafer-level packaging finished product of embodiment one.
Fig. 6 is the flow chart of the embodiment two of the wafer-level packaging method of the application MEMS device.
Fig. 7 A to Fig. 7 E is the part steps section knot of the embodiment two of the wafer-level packaging method of the application MEMS device
Structure schematic diagram, wherein Fig. 7 E is the schematic diagram of the section structure of the wafer-level packaging finished product of embodiment two.
Description of symbols in figure: 101 be carrying wafer；102 be interim bonding material；103 be the first one polymer；
104 be the second one polymer；105 be adhesive layer；111 be fairlead；112 be the cavity carried on wafer；113 be confined air
Chamber；201 be MEMS wafer；202 be MEMS device；203 be the cavity in MEMS wafer；204 be electrode；206 be lead electrode；
207 be tin ball.
Specific embodiment
Referring to Fig. 4, the embodiment one of the wafer-level packaging method of the MEMS device of the application includes the following steps.
Step 401, as shown in Figure 5A, one layer of interim bonding material 102 is deposited on carrying wafer 101.Wafer 101 is to use
In the wafer of carrying encapsulating structure, thereon and do not have MEMS device.Preferably, carrying wafer 101 can be monocrystalline silicon, glass
Equal materials.Preferably, interim bonding material 102 have temperature-sensitive, it is photosensitive or be easy to by chemical agent corrode characteristic, in order to
Effectively encapsulating structure can be stripped down from carrying wafer 101 during subsequent technique.Depositing operation also referred to as deposits
Technique, preferably chemical vapor deposition (CVD), physical vapor deposition (PVD) etc. are also possible to the mode of spin coating or fitting.
Step 402, as shown in Figure 5 B, the first strata for making encapsulating structure is deposited on interim bonding material 102
Object 103 is closed, and the first one polymer 103 is patterned to form the fairlead 111 drawn for electrode.Fairlead 111
Side wall be the first one polymer 103.The bottom-exposed of fairlead 111 goes out interim bonding material 102.First one polymer 103
Can be epoxy resin, PI(Polyimide, polyimides), SU-8 photoresist, BCB(Benzocyclobutene, benzo ring
Butylene), PMMA(Poly (methyl methacrylate), polymethyl methacrylate), PDMS
Synthetic fibre in (Polydimethylsiloxane, dimethyl silicone polymer), Parylene(pa) etc. polymer materials.Preferably,
One layer of polymeric 103 can be deposited to by the way of spin coating or fitting on interim bonding material 102.Preferably, to first layer
The patterning process of polymer 103 is for example, by using lithography and etching technique.
Step 403, as shown in Figure 5 C, successively deposition is used to form the second of cavity structure in the first one polymer 103
One polymer 104 and adhesive layer 105 for making encapsulating structure Yu MEMS wafer secure bond, and both materials are carried out
Graphically cavity 112 for protecting MEMS device is formed simultaneously to expose fairlead 111.The material of second one polymer 104
Range of choice is identical as the material selection range of the first one polymer 103.The side wall of fairlead 111 is the first one polymer at this time
103, the second one polymer 104 and adhesive layer 105.The bottom-exposed of fairlead 111 goes out interim bonding material 102.Cavity 112
The adhesive layer 105 of the full depth in some region and the second one polymer 104 of full depth are removed in this way, and are optionally removed
It is formed after first one polymer 103 of the segment thickness in the region.At this point, by the first one polymer 103, the second layers of polymer
Object 104 and adhesive layer 105 together constitute the cavity 112 on carrying wafer 101；It is collectively formed by fairlead 111 and cavity 112
Encapsulating structure.Preferably, the second one polymer 104 is deposited in the first one polymer 103 by the way of fitting, to guarantee
Fairlead 111 in first one polymer 103 is not filled by the second one polymer 104.Preferably, adhesive layer 105 can be by
A kind of material composition, can also be superimposed by two or more materials and be constituted.
It step 404, as shown in Figure 5 D, will be through separately machined and formed the MEMS wafer 201 of MEMS device and formed
The carrying wafer 101 of encapsulating structure is aligned.There is MEMS device 202, the MEMS device 202 in MEMS wafer 201
Among the cavity 203 in MEMS wafer 201.The electrode 204 and the lead on encapsulating structure that the alignment includes MEMS device
Hole 111 is aligned, and further includes that cavity 203 in MEMS device 202 and MEMS wafer 201 is aligned with the cavity 112 on encapsulating structure.
At this point, carrying wafer 101 be for example inverted, i.e., carrying wafer 101 on encapsulating structure downward；MEMS wafer 201 is for example just being set, i.e.,
MEMS device 202 in MEMS wafer 201 is upward；Or it is opposite.
Step 405, as shown in fig. 5e, make to carry wafer 101 and MEMS wafer 201 by way of pressurizeing and/or heating
Wafer bonding is carried out, adhesive layer 105 is securely attached together the encapsulating structure carried on wafer 101 with MEMS wafer 201.
Cavity 112 on carrying wafer 101 and the cavity 203 in MEMS wafer 201 together form closed cavity 113, for accommodating,
Sealing, isolation, protection MEMS device 202.Closed cavity 113 by MEMS wafer 201, adhesive layer 105, the second one polymer 104,
First one polymer 103 collectively forms.The top of closed cavity 113 is the first one polymer 103.The side wall of closed cavity 113
For the MEMS wafer 201 of the second one polymer 104 and adhesive layer 105 and segment thickness, and optionally further comprising segment thickness
A part of first one polymer 103 composition side wall.The bottom of closed cavity 113 is MEMS wafer 201.
Step 406, as illustrated in figure 5f, according to the characteristic of interim bonding material 102, tried using heating, ultraviolet irradiation, chemistry
One or more modes of agent corrosion remove interim bonding material 102, so that carrying wafer 101 and encapsulating structure are separated to come
(i.e. cleavage).After carrying wafer 101 and encapsulating structure disengaging, fairlead 111 is just exposed.Preferably, carrying wafer 101 exists
It can be recycled by cleaning after completing cleavage, to further decrease the material cost in encapsulation process.
Step 407, as depicted in fig. 5g, metal filling is carried out to fairlead 111, forms the lead electrode across encapsulating structure
206, complete the electrode 204 of MEMS device and the connection of external electrode.Optionally, it is made again in lead electrode 206 for patch
The tin ball 207 of installation completes final packaging technology step.This is also the reality of the wafer-level packaging method of the application MEMS device
Apply the schematic diagram of the section structure of the encapsulation finished product of example one.
Referring to Fig. 6, the embodiment two of the wafer-level packaging method of the MEMS device of the application includes the following steps.
Step 601, as shown in Figure 5A, one layer of interim bonding material 102 is deposited on carrying wafer 101.Wafer 101 is to use
In the wafer of carrying encapsulating structure, thereon and do not have MEMS device.Preferably, carrying wafer 101 can be monocrystalline silicon, glass
Equal materials.Preferably, interim bonding material 102 have temperature-sensitive, it is photosensitive or be easy to by chemical agent corrode characteristic, in order to
Effectively encapsulating structure can be stripped down from carrying wafer 101 during subsequent technique.Depositing operation also referred to as deposits
Technique, preferably chemical vapor deposition (CVD), physical vapor deposition (PVD) etc. are also possible to the mode of spin coating or fitting.
Step 602, as shown in Figure 5 B, the first strata for making encapsulating structure is deposited on interim bonding material 102
Object 103 is closed, and the first one polymer 103 is patterned to form the fairlead 111 drawn for electrode.Fairlead 111
Side wall be the first one polymer 103.The bottom-exposed of fairlead 111 goes out interim bonding material 102.First one polymer 103
Can be epoxy resin, PI(Polyimide), SU-8 photoresist, the polymer materials such as BCB, PMMA, PDMS, Parylene.It is excellent
Selection of land, the first one polymer 103 can be deposited to by the way of spin coating or fitting on interim bonding material 102.Preferably, right
The patterning process of first one polymer 103 is for example, by using lithography and etching technique.
Step 603, as shown in Figure 7 A, deposition is used to form cavity structure and for making in the first one polymer 103
Second one polymer 104 of encapsulating structure and MEMS wafer secure bond, is patterned it to expose fairlead 111 simultaneously
Form the cavity 112 for protecting MEMS device.The material selection range of second one polymer 104 and the first one polymer 103
Material selection range it is identical.The side wall of fairlead 111 is the first one polymer 103 and the second one polymer 104 at this time.Lead
The bottom-exposed in hole 111 goes out interim bonding material 102.Cavity 112 is, for example, the second layer for removing the full depth in some region
Polymer 104, and optionally remove the first formation later of one polymer 103 of the segment thickness in the region.At this point, by first
One polymer 103 and the second one polymer 104 together constitute the cavity 112 on carrying wafer 101；By fairlead 111 and sky
Chamber 112 together constitutes encapsulating structure.Preferably, the second one polymer 104 deposits to the first layers of polymer by the way of fitting
On object 103, to guarantee that the fairlead 111 in the first one polymer 103 is not filled by the second one polymer 104.
It step 604, as shown in Figure 7 B, will be through separately machined and formed the MEMS wafer 201 of MEMS device and formed
The carrying wafer 101 of encapsulating structure is aligned.There is MEMS device 202, the MEMS device 202 in MEMS wafer 201
Among the cavity 203 in MEMS wafer 201.The electrode 204 and the lead on encapsulating structure that the alignment includes MEMS device
Hole 111 is aligned, and further includes that cavity 203 in MEMS device 202 and MEMS wafer 201 is aligned with the cavity 112 on encapsulating structure.
At this point, carrying wafer 101 be for example inverted, i.e., carrying wafer 101 on encapsulating structure downward；MEMS wafer 201 is for example just being set, i.e.,
MEMS device 202 in MEMS wafer 201 is upward；Or it is opposite.
Step 605, as seen in figure 7 c, make to carry wafer 101 and MEMS wafer 201 by way of pressurizeing and/or heating
Wafer bonding is carried out, the second one polymer 104 is firmly attached the encapsulating structure carried on wafer 101 with MEMS wafer 201
Together.Cavity 112 on carrying wafer 101 and the cavity 203 in MEMS wafer 201 together form closed cavity 113, use
In receiving, sealing, isolation, protection MEMS device 202.Closed cavity 113 is by MEMS wafer 201, the second one polymer 104,
One layer of polymeric 103 collectively forms.The top of closed cavity 113 is the first one polymer 103.The side wall of closed cavity 113 is
The MEMS wafer 201 of second one polymer 104 and segment thickness, and optionally further comprising segment thickness the first one polymer
103 constitute a part of side wall.The bottom of closed cavity 113 is MEMS wafer 201.
Step 606, as illustrated in fig. 7d, according to the characteristic of interim bonding material 102, tried using heating, ultraviolet irradiation, chemistry
One or more modes of agent corrosion remove interim bonding material 102, so that carrying wafer 101 and encapsulating structure are separated to come
(i.e. cleavage).After carrying wafer 101 and encapsulating structure disengaging, fairlead 111 is just exposed.Preferably, carrying wafer 101 exists
It can be recycled by cleaning after completing cleavage, to further decrease the material cost in encapsulation process.
Step 607, as seen in figure 7e, metal filling is carried out to fairlead 111, forms the lead electrode across encapsulating structure
206, complete the electrode 204 of MEMS device and the connection of external electrode.Optionally, it is made again in lead electrode 206 for patch
The tin ball 207 of installation completes final packaging technology step.This is also the reality of the wafer-level packaging method of the application MEMS device
Apply the schematic diagram of the section structure of the encapsulation finished product of example two.
Above-described embodiment two and the main distinction of embodiment one are: embodiment two eliminates adhesive layer 105.If second
One polymer 104 has enough adhesion strengths, so that it may the encapsulating structure and MEMS being directly used on bonding carrying wafer 101
Wafer 201, and omit the adhesive layer 105 in embodiment one.
Compared with the wafer-level packaging method of existing MEMS device, the application has following features and beneficial effect.
First, being bonded after MEMS device and encapsulating structure independently complete in two wafers respectively by organic matter
MEMS device is disposably sealingly fitted among encapsulating structure by technique.The manufacturing process of encapsulating structure will not influence or damage
MEMS device, entire encapsulation process is most simplified on the processing of MEMS wafer and influences to minimize, and significantly reduces MEMS device
The probability of packed technique damage.
Second, MEMS wafer have been completed before encapsulation release and etc., release process can be related to material corrosion choosing
The problem of selecting property.When making the cavity in MEMS wafer, one layer of expendable material is generally first deposited, then deposit on expendable material
Then the material for forming cavity removes expendable material to form required cavity and keep MEMS device hanging to discharge MEMS device.?
During release steps (i.e. removal expendable material), such as typical hydrogen fluoride (HF) gas release process, can to titanium (Ti),
Aluminium (Al), aluminium sulfide (Al2S3) etc. electrode materials cause to corrode, also can be to silica (SiO2), silicon nitride (Si3N4) etc. media material
Material causes to corrode.The application carries out the production of release steps and encapsulating structure in MEMS wafer in two wafers respectively,
Therefore the material of encapsulating structure and process choice range are wider.
Third, encapsulating structure is attached to carrying crystalline substance in such a way that interim bonding technology is using two layers of organic polymer superposition
On circle, it can complete to remove encapsulating structure from slide glass wafer by the method that heating, ultraviolet irradiation or chemical reagent corrode.Carrying
Wafer is reusable, reduces packaging cost.Using organic polymer as encapsulating structure, packaging cost is not only reduced,
And the bonding temperature of organic polymer is lower, the temperature budget being effectively increased in MEMS device process.
This application provides the wafer-level packaging methods that a kind of pair of MEMS device carries out inexpensive level Hermetic Package, can apply
In the MEMS sensor that MEMS gyroscope, accelerometer etc. need level Hermetic Package, can also apply MEMS resonistor,
SAW(surface acoustic wave) filter, BAW(bulk acoustic wave) filter etc. needs in the MEMS actuator of level Hermetic Package.
The above is only preferred embodiment of the present application, it is not used to limit the application.Come for those skilled in the art
It says, various changes and changes are possible in this application.Within the spirit and principles of this application, made any modification, equivalent
Replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of wafer-level packaging method of MEMS device, characterized in that firstly, MEMS device is made in MEMS wafer,
It carries and encapsulating structure is adhered to by interim bonding material on wafer；Secondly, the encapsulating structure on wafer and MEMS wafer will be carried
It is bonded together, the encapsulating structure is together with MEMS wafer by the closed encirclement of MEMS device；Again, the interim bonding material is removed
Material is mutually removed to carry wafer with encapsulating structure, and the encapsulation to MEMS device is completed.
2. the wafer-level packaging method of MEMS device according to claim 1, characterized in that the carrying wafer is monocrystalline
Silicon or glass.
3. the wafer-level packaging method of MEMS device according to claim 1, characterized in that the interim bonding material tool
Have temperature-sensitive, it is photosensitive or be easy to by chemical agent corrode characteristic, in order to during subsequent technique effectively by encapsulating structure
It is stripped down from carrying wafer.
4. the wafer-level packaging method of MEMS device according to claim 1, characterized in that the encapsulating structure is organic
Polymer material.
5. the wafer-level packaging method of MEMS device according to claim 4, characterized in that described to lead on carrying wafer
Cross interim bonding material attachment encapsulating structure include: successively deposited on carrying wafer interim bonding material, the first one polymer,
Second one polymer and adhesive layer；Fairlead and cavity are formed on the first one polymer, the second one polymer and adhesive layer；Draw
String holes runs through adhesive layer, the second one polymer and the first one polymer；Cavity runs through adhesive layer and the second one polymer；Fairlead
Encapsulating structure is collectively formed with cavity.
6. the wafer-level packaging method of MEMS device according to claim 4, characterized in that described to lead on carrying wafer
Crossing interim bonding material attachment encapsulating structure includes: successively to deposit interim bonding material, the first one polymer on carrying wafer
With the second one polymer；Fairlead and cavity are formed in the first one polymer and the second one polymer；Fairlead runs through second
One polymer and the first one polymer；Cavity runs through the second one polymer；Fairlead and cavity collectively form encapsulating structure.
7. the wafer-level packaging method of MEMS device according to claim 5 or 6, characterized in that first layers of polymer
Object, the second one polymer are epoxy resin, polyimides, SU-8 photoresist, benzocyclobutene, polymethyl methacrylate, gather
The combination of any one or more in dimethyl siloxane, pa in synthetic fibre.
8. the wafer-level packaging method of MEMS device according to claim 5 or 6, characterized in that described to carry wafer
On encapsulating structure and MEMS wafer to be bonded together include: fairlead pair on electrode and encapsulating structure by MEMS device
Cavity in standard, MEMS device and MEMS wafer is aligned with the cavity on encapsulating structure；Again by adhesive layer or second polymer
The encapsulating structure carried on wafer is securely connect by layer with MEMS wafer.
9. the wafer-level packaging method of MEMS device according to claim 8, characterized in that the encapsulating structure and MEMS
Wafer together by MEMS device it is closed include: cavity on cavity and MEMS wafer in encapsulating structure together form it is close
Seal the closed cavity of MEMS device；
The closed cavity is collectively formed by MEMS wafer, adhesive layer, the second one polymer, the first one polymer；
Alternatively, the closed cavity is collectively formed by MEMS wafer, the second one polymer, the first one polymer.
10. the wafer-level packaging method of MEMS device according to claim 5 or 6, characterized in that the depositing operation packet
Include chemical vapor deposition, physical vapour deposition (PVD), spin coating or fitting.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110868180A (en) * | 2019-10-12 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Semiconductor package and manufacturing method thereof |
| CN111180438A (en) * | 2019-12-31 | 2020-05-19 | 中芯集成电路（宁波）有限公司 | Wafer level packaging method and wafer level packaging structure |
| CN115001443A (en) * | 2022-07-18 | 2022-09-02 | 常州承芯半导体有限公司 | Packaging structure and packaging method of resonance device |
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