CN105293424B - A kind of semiconductor devices and preparation method, electronic installation - Google Patents
A kind of semiconductor devices and preparation method, electronic installation Download PDFInfo
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- CN105293424B CN105293424B CN201410226204.7A CN201410226204A CN105293424B CN 105293424 B CN105293424 B CN 105293424B CN 201410226204 A CN201410226204 A CN 201410226204A CN 105293424 B CN105293424 B CN 105293424B
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Abstract
The present invention relates to a kind of semiconductor devices and preparation method, electronic installation, methods described includes：Substrate is provided, and integrated circuit is formed with the substrate；Acceleration transducer, pressure sensor and humidity sensor are sequentially formed on the substrate vertically, to realize in vertical direction integrated.The present invention is in order to solve problems of the prior art, there is provided a kind of new preparation method, by the use of low temperature SiGe as structure sheaf in methods described, by the use of amorphous carbon as sacrificial material layer, form the humidity sensor and capacitance pressure transducer, and 2 axis accelerometers of CMOS MEMS circuit vertical integration, effectively reduce overall chip area, can effectively improve chip wafer production efficiency and lift the function of single chip.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of semiconductor devices and preparation method, electronics
Device.
Background technology
With the continuous development of semiconductor technology, using microelectromechanical systems (Micro Electro Mechanical
System, MEMS) fabrication techniques MEMS it is very noticeable.MEMS is to make micro- on a semiconductor substrate
Little MEMS structure body, as purposes such as sensor, oscillators.Fixed electrode and movable electricity are provided with the MEMS structure body
Pole, detects electrostatic capacitance for resulting from fixed electrode etc. by using the flexure of movable electrode, obtains as MEMS
Characteristic.
The MEMS species is various, wherein, MEMS humidity sensors and pressure sensor Industry Control,
The fields such as automotive electronics, environmental monitoring, biomedicine are widely used, and mems accelerometer is in industry, consumer electronics
In application also very extensively.
Wherein, the physical quantity variation of sensor needs the change that electric signal is changed into by control circuit.Conventional way
It is that independent sensor and control circuit are integrated by the form for encapsulating, the volume of this packaging body is relatively very big,
And the reliability of entirety is also relatively poor.
Some new ways are to continue sensor is made on chip after the completion of IC control circuits at present, this vertical whole
The sensor of conjunction possesses the reliability of less volume and Geng Gao for the sensor of packing forms.But common many work(
The form that CMOS-MEMS chips remain CMOS+ humidity sensors+pressure sensing+accelerometer can be combined.Wherein each senses
Device remains relatively independent parallel system, and the chip total area of this multifunctional combination is still suitable big, is unfavorable for device
The diminution of the integrated and size of part.
Therefore, there is above-mentioned multiple drawbacks in current MEMS, need to do into one MEMS and preparation method
The improvement of step, to eliminate the problem.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will enter in specific embodiment part
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical scheme required for protection
Key feature and essential features, more do not mean that the protection domain for attempting to determine technical scheme required for protection.
The present invention is in order to overcome the problem of presently, there are, there is provided a kind of preparation method of semiconductor devices, including：
Substrate is provided, and integrated circuit is formed with the substrate；
Acceleration transducer, pressure sensor and humidity sensor are sequentially formed on the substrate vertically, with
Realize in vertical direction integrated.
Alternatively, the method for forming the acceleration transducer, the pressure sensor and the humidity sensor includes：
Substrate is provided, acceleration transducer bottom electrode and the interconnection of humidity sensor bottom are formed with the substrate
Layer；
Form acceleration MEMS layer on the substrate, and described in above the acceleration transducer bottom electrode plus
Some acceleration sensing structures surrounded by the first sacrificial material layer and the second sacrificial material layer are formed in speed MEMS layer；
The 4th dielectric layer is formed in the middle part of the acceleration MEMS layer；
Electrode material layer is formed on the MEMS layer and the 4th dielectric layer and is patterned, to form pressure sensor
Bottom electrode, while exposing second sacrificial material layer；
It is in second sacrificial material layer and sacrificial positioned at formation the 3rd above the middle pressure sensor bottom electrode
Domestic animal material layer；
The 5th dielectric layer is formed on the pressure sensor bottom electrode of both sides, then in the 5th dielectric layer and
Pressure sensing membrane is formed above 3rd sacrificial material layer；
The pressure sensing membrane is patterned, opening is formed, to expose the 3rd sacrificial material layer；
First sacrificial material layer, second sacrificial material layer and the 3rd sacrificial material layer are removed, to be formed
Acceleration transducer cavity and pressure sensor cavities；
Fill the opening；
In part, the acceleration transducer bottom electrode, the pressure sensor membrane and the humidity sensor bottom are mutual
Even the top of layer forms metal interconnection structure；
Humidity sensor film is formed in the interconnection structure above the humidity sensor bottom interconnection layer.
Alternatively, form the method bag of the acceleration transducer bottom electrode and the humidity sensor bottom interconnection layer
Include：
Substrate is provided；
The first dielectric layer is formed on the substrate, and mutually isolated acceleration is formed on first dielectric layer pass
Sensor bottom electrode and the humidity sensor bottom interconnection layer；
Depositing first dielectric layer again, to cover the acceleration transducer bottom electrode and the humidity sensor bottom
Interconnection layer；
First dielectric layer is patterned, to expose the acceleration transducer bottom electrode and the humidity sensor bottom
Portion's interconnection layer.
Alternatively, the method for forming the acceleration MEMS layer includes：
The first MEMS layer is deposited on the substrate and is patterned, with the acceleration transducer bottom electrode and described
Acceleration MEMS layer described in forming part in humidity sensor bottom interconnection layer；
On the substrate below the top of depositing second dielectric layer to first MEMS layer；
In first sacrificial material layer of disposed thereon of the acceleration transducer bottom electrode and anti-etching and planarization institute
The first sacrificial material layer is stated to first MEMS layer, to fill the gap between first MEMS layer；
In second MEMS layer of disposed thereon of first MEMS layer and first sacrificial material layer, to form described adding
Speed MEMS layer；
Deposit the 3rd dielectric layer and pattern, to isolate the acceleration MEMS layer.
Alternatively, first MEMS layer selects low temperature SiGe layer；
Second MEMS layer selects low temperature SiGe layer；
First sacrificial material layer selects amorphous carbon；
Second dielectric layer selects oxide；
3rd dielectric layer selects oxide.
Alternatively, the method for forming the acceleration sensing structure includes：
The acceleration MEMS layer is patterned, some grooves are formed in the acceleration MEMS layer and is located at described
The acceleration sensing structure in some grooves；
The second sacrificial material layer is deposited, to fill the groove；
Anti-etching and planarization second sacrificial material layer is to the acceleration MEMS layer.
Alternatively, forming the 3rd sacrificial material layer and the method for pressure sensing membrane of being formed includes：
The 3rd sacrificial material layer is deposited on the substrate；
The mask layer of patterning is formed in the 3rd sacrificial material layer, and described in the mask layer as mask etch
3rd sacrificial material layer, to be formed in second sacrificial material layer and on the middle pressure sensor bottom electrode
Coating；
Deposition pressure sensing film materials layer is simultaneously patterned, with the 5th dielectric layer and the 3rd sacrificial material layer
Top forms the pressure sensing membrane.
Alternatively, the pressure sensing membrane selects SiGe layer.
Alternatively, the method for forming the metal interconnection structure includes：
The 6th dielectric layer is deposited, to fill the opening；
Passivation layer is formed in the 6th dielectric layer, to cover the 6th dielectric layer；
The 6th dielectric layer is patterned, through hole and pad metal layer are formed above the pressure sensor membrane, together
The top of the acceleration transducer bottom electrode that pressure sensor bottom electrode described in Shi Yu is connected forms through hole and weldering
Disk metal level；
The acceleration MEMS layer and the 6th Jie above the humidity sensor bottom interconnection layer is patterned simultaneously
Electric layer, to expose the humidity sensor bottom interconnection layer；
Through hole and metal pad are formed above the humidity sensor bottom interconnection layer, with the humidity sensor bottom
Portion's interconnection layer forms connection.
Alternatively, the size of the opening is 0.5-0.6um.
Alternatively, the opening is filled from low-pressure oxidized nitride layer.
Alternatively, the method for forming the humidity sensor film includes：
The metal pad in the interconnection structure above the humidity sensor bottom interconnection layer is patterned, with the metal
Some grooves are formed in pad；
Deposition humidity sensor membrane layers form the humidity sensor film to fill the groove.
Alternatively, the humidity sensor film selects Kapton.
Present invention also offers a kind of semiconductor devices prepared based on above-mentioned method.
Present invention also offers a kind of electronic installation, including above-mentioned semiconductor devices.
The present invention is in order to solve problems of the prior art, there is provided a kind of new preparation method, in methods described
By the use of low temperature SiGe as structure sheaf, by the use of amorphous carbon as sacrificial material layer, CMOS-MEMS circuit vertical integration is formed
Humidity sensor and capacitance pressure transducer, and 2 axis accelerometers, effectively reduce overall chip area, can be effective
Improve chip wafer production efficiency and lift the function of single chip.
Description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this
Bright embodiment and its description, for explaining the device and principle of the present invention.In the accompanying drawings,
Fig. 1 a-1k are the preparation process schematic diagram of one specifically semiconductor devices described in embodiment of the present invention；
Fig. 2 is the preparation technology flow chart of semiconductor devices described in the embodiment of the invention.
Specific embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And, it is obvious to the skilled person that the present invention can be able to without the need for one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, for some technical characteristics well known in the art do not enter
Row description.
It should be appreciated that the present invention can be implemented in different forms, and should not be construed as being limited to what is proposed here
Embodiment.Disclosure will be made thoroughly and complete on the contrary, providing these embodiments, and be will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, in order to clear, the size and relative size in Ceng He areas may be exaggerated.From start to finish
Same reference numerals represent identical element.
It should be understood that work as element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " other
When element or layer, its can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
Person there may be element between two parties or layer.Conversely, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or when " being directly coupled to " other elements or layer, then there is no element between two parties or layer.Although it should be understood that can make
Various elements, part, area, floor and/or part are described with term first, second, third, etc., these elements, part, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish element, part, area, floor or part with it is another
One element, part, area, floor or part.Therefore, without departing from present invention teach that under, the first element discussed below, portion
Part, area, floor or part are represented by the second element, part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., can describe for convenience here and used so as to describe an element or feature shown in figure with
The relation of other elements or feature.It should be understood that in addition to the orientation shown in figure, spatial relationship term is intended to also include making
With with operation in device different orientation.For example, if the device upset in accompanying drawing, then, is described as " under other elements
Face " or " under it " or " under which " element or feature will be oriented to other elements or feature " on ".Therefore, exemplary art
Language " ... below " and " ... under " may include upper and lower two orientations.Device can additionally be orientated and (be rotated by 90 ° or which
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and the restriction not as the present invention.Here makes
Used time, " one " of singulative, " one " and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " including ", when using in this specification, the feature, whole is determined
The presence of number, step, operation, element and/or part, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, part and/or group.When here is used, term "and/or" includes any of related Listed Items and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Explaination technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, this
Invention can also have other embodiment.
Embodiment 1
The present invention is in order to solve problems of the prior art, there is provided a kind of new preparation method, with reference to attached
Fig. 1 a-1k are described further to methods described.
First, execution step 101, there is provided substrate 101, are formed with integrated circuit, the integrated electricity in the substrate 101
Acceleration transducer bottom electrode 103 and humidity sensor bottom interconnection layer 102 are formed with above road.
The acceleration transducer bottom electrode 103 wherein positioned at side forms pressure sensor in subsequent steps
Signal output part, such as the larger acceleration transducer bottom electrode 1031 of length in Fig. 1 a.
Specifically, as shown in Figure 1a, wherein the substrate 101 can select substrate commonly used in the art, here no longer to go to live in the household of one's in-laws on getting married
State, in the substrate, be formed with integrated circuit, for example, could be formed with special IC (ASIC), the special IC
Concrete composition will not be described here.
Alternatively, the substrate 101 can include acceleration transducer region and humidity sensor region, need explanation
It is that two regions can no obvious boundary.
After being formed with integrated circuit on the substrate, acceleration transducer bottom electrode can also be further formed
103 and humidity sensor bottom interconnection layer 102, forming method includes：Form the first dielectric layer on the substrate, and first
Metal level is formed on dielectric layer, the metal level is patterned, with respectively in the acceleration transducer region and humidity sensor
Mutually isolated acceleration transducer bottom electrode 103 and the humidity sensor bottom interconnection layer 102 are formed in region；Then
Depositing first dielectric layer, is interconnected with covering the acceleration transducer bottom electrode 103 and the humidity sensor bottom again
Layer 102；First dielectric layer is finally patterned, is passed with exposing the acceleration transducer bottom electrode 103 and the humidity
Sensor bottom interconnection layer.
Execution step 102, forms acceleration MEMS layer in the substrate 101, and in the acceleration transducer bottom
Some acceleration sensing structures surrounded by sacrificial material layer are formed in the acceleration MEMS layer above electrode 103.
Specifically, the first MEMS layer is deposited in the substrate 101 first and is patterned, with the acceleration transducer
Acceleration MEMS layer described in forming part on bottom electrode 103 and the humidity sensor bottom interconnection layer 102, removes bottom electricity
The first MEMS layer beyond pole, it is described as shown in Figure 1 b.
Wherein, first MEMS layer selects low temperature SiGe layer, and its thickness is 2-10K angstrom, optional 5K angstrom, but do not limit to
In the material and thickness.
Then, the second dielectric layer is formed on the substrate, wherein the thickness of second dielectric layer is less than described first
The thickness of MEMS layer, second dielectric layer are following at the top of first MEMS layer, and second dielectric layer is from oxidation
Thing, its thickness can be 1-5K angstrom, are chosen as 2K angstrom, but are not limited to the material and thickness.
Further, in the acceleration transducer region, sink in the top of the acceleration transducer bottom electrode 103
The first sacrificial material layer 105 of product, then anti-etching and planarization first sacrificial material layer 105 to first MEMS layer,
To fill the gap between first MEMS layer, as shown in Figure 1 b, pass so that pressure is formed after removing in subsequent steps
Sensor cavity.
Alternatively, first sacrificial material layer 105 selects amorphous carbon, and the thickness after planarization is 1-20K angstrom, optional
For 10K angstrom.
Then in second MEMS layer of disposed thereon 104 of first MEMS layer and first sacrificial material layer, with shape
Into the acceleration MEMS layer, specifically, the second MEMS layer 104 is deposited on the substrate, and patterns the 2nd MEMS
Layer 104, forms the acceleration MEMS layer with the top in the humidity sensor, at the same in the acceleration bottom electrode and
The top of first sacrificial material layer 105 forms the acceleration MEMS layer, described in the acceleration transducer region
Acceleration MEMS layer is integrated setting, and which covers described acceleration bottom electrode and first sacrificial material layer 105.
Alternatively, second MEMS layer selects low temperature SiGe layer, and its thickness is 10-30K angstrom, optional 20K angstrom.
Finally, for the acceleration MEMS isolated in the acceleration sensor region and the humidity sensor region
Layer, deposits the 3rd dielectric layer and patterns, to expose the acceleration MEMS layer, and isolate the acceleration MEMS layer, such as scheme
Shown in 1c.
Alternatively, the 3rd dielectric layer selects oxide skin(coating), and its thickness is 10-30K angstrom, optional 22K angstrom.
Then the acceleration MEMS layer is patterned, some grooves are formed in the acceleration MEMS layer and is located at
The acceleration sensing structure in some grooves, specifically, can form patterning on the acceleration MEMS layer
Mask layer, such as photoresist layer is formed with the pattern of the acceleration sensing structure, then covered with described in the mask layer
Film layer is acceleration MEMS layer described in mask etch, with first sacrificial material layer as etching stopping layer, with the acceleration
Several grooves are formed in degree MEMS layer, and the top of first sacrificial material layer 105 forms cylindricality in the trench
Acceleration sensing structure, as shown in Figure 1 d, wherein the acceleration sensing structure is in the acceleration transducer cavity
Moveable mass.
The second sacrificial material layer is deposited, to fill the groove, and the acceleration sensing structure and institute is completely covered
State acceleration MEMS layer, then anti-etching and planarization second sacrificial material layer to the acceleration MEMS layer, such as
Shown in Fig. 1 e.
Alternatively, second sacrificial material layer can select amorphous carbon, and its thickness is 10-30K angstrom, optional 25K angstrom.
Execution step 103, forms the 4th dielectric layer on the middle part of the acceleration MEMS layer, then described the
Electrode material layer is formed on four dielectric layers and the MEMS layer and is patterned, to form pressure sensor bottom electrode 106, while
Expose second sacrificial material layer.
Specifically, as shown in fig. le, the 4th dielectric layer of deposition, Ran Hou on the middle part of the acceleration MEMS layer
Electrode material layer is formed on 4th dielectric layer and the MEMS layer, the mask layer of patterning is then formed, and is covered with described
Film layer is the 4th dielectric layer and electrode material layer described in mask etch, forms opening, exposes second sacrificial material layer, while
The electrode material layer of the patterning forms pressure sensor bottom electrode 106.
Wherein described 4th dielectric layer is not covered with the both sides of the MEMS layer, in the both sides of the MEMS layer, the electricity
Material layer direct and described MEMS layer in pole contacts, in subsequent steps for will be pressure sensor fundic electrode signal defeated
Go out.
Alternatively, the 4th dielectric layer selects oxide skin(coating), its thickness be 1-10K angstrom, optional 2K angstrom, the electrode material
The bed of material can select metal material commonly used in the art, such as Al, Cu etc., will not be described here, and its thickness is 5-20K angstrom, can
Select 8K angstrom.
Execution step 104, forms the 5th dielectric layer, on the pressure sensor bottom electrode of both sides then described
Pressure sensing membrane 107 is formed above 5th dielectric layer and the 3rd sacrificial material layer.
Specifically, the 5th dielectric layer is formed first on the pressure sensor bottom electrode of both sides, for isolating
State pressure sensor bottom electrode and the pressure sensing membrane.
Then the 3rd sacrificial material layer is deposited in the substrate 101, to cover the substrate, then pattern described the
Three sacrificial material layers, only retain above second sacrificial material layer and positioned at the middle pressure sensor bottom electrode
The 3rd sacrificial material layer above in the of 106, and remove described being located above the pressure sensor bottom electrode 106 at two ends
The 3rd sacrificial material layer, as shown in Figure 1 f.
Alternatively, wherein the 3rd sacrificial material layer selects amorphous carbon, its thickness is 10-30K angstrom, optional 20K angstrom.
Further, the 5th dielectric layer and and the 3rd sacrificial material layer top formed pressure sensing membrane
107, as shown in Figure 1 g, wherein the pressure sensing membrane 107 selects SiGe, its thickness is 1-10K angstrom, optional 4K angstrom.
Execution step 105 patterns the pressure sensing membrane 107, forms opening, to expose the 3rd sacrificial material layer.
Specifically, as shown in Figure 1 g, formed with patterns of openings in the pressure sensing membrane 107 first in this step
Mask layer, then with the mask layer as mask etch described in pressure sensing membrane 107, the patterns of openings is transferred to described
In pressure sensing membrane 107, wherein the opening size is 05～0.6um, but be not limited to that the number range.
Execution step 106, removes first sacrificial material layer, second sacrificial material layer and the described 3rd and sacrifices material
The bed of material, to form acceleration transducer cavity and pressure sensor cavities.
Specifically, as shown in figure 1h, first sacrificial material layer, second sacrificial material layer and the described 3rd are removed
Sacrificial material layer, forms acceleration transducer cavity and pressure sensor cavities in one step simultaneously, wherein, form described
After acceleration transducer cavity, transportable acceleration sensing structure is formed with the cavity, by the acceleration
Sensing of the mobile realization of sensing arrangement to the acceleration change.
Alternatively, removed from the method with the acceleration sensing structure with larger etching selectivity in this step
First sacrificial material layer and second sacrificial material layer, for example from ashing method remove first sacrificial material layer,
Second sacrificial material layer and the 3rd sacrificial material layer, but it is not limited to the method.
Execution step 107, fills the opening.
Specifically, as shown in figure 1i, the 6th dielectric layer is deposited, to fill the opening；Wherein described 6th dielectric layer can
From low-pressure oxidized nitride layer, its thickness be 10-30K angstrom, optional 20K angstrom, but be not limited to that the material and the thickness.
Execution step 108, forms in the top of the pressure sensor membrane and the humidity sensor bottom interconnection layer 102
Metal interconnection structure.
Specifically, as shown in fig. ij, passivation layer 108 is formed in the 6th dielectric layer, to cover the 6th Jie
Electric layer.
Then, in the acceleration transducer region, the 6th dielectric layer is patterned, with the pressure sensing membrane
Top forms through hole and pad metal layer, for by the signal output of the pressure sensing membrane.
Simultaneously in the upper square of the acceleration transducer bottom electrode being connected with the pressure sensor bottom electrode
Into through hole and metal pad, to realize the output of the pressure sensor fundic electrode signal.
Further, the bottom electrode of one end Jing MEMS layers of the acceleration transducer bottom electrode and pressure sensor
It is connected, the other end is connected with through hole and metal pad, to realize the output of the pressure sensor fundic electrode signal.
Simultaneously in the humidity sensor region, the acceleration above the humidity sensor bottom interconnection layer is patterned
Degree MEMS layer and the 6th dielectric layer, to form opening and groove, expose the humidity sensor bottom interconnection layer, from gold
Category material fills the opening and groove, to form through hole and metal pad above the humidity sensor bottom interconnection layer,
Connected with being formed with the humidity sensor bottom interconnection layer.
Alternatively, the passivation layer 108 can select SIN layers, and its thickness is 0.5-5K angstrom, optional 1K angstrom.It is wherein described
Metal pad can be Al metal pads.
Execution step 109, in the interconnection structure above the humidity sensor bottom interconnection layer forms humidity and passes
Sense film.
Specifically, as shown in figure 1k, pattern the gold in the interconnection structure above the humidity sensor bottom interconnection layer
Category pad, so that some grooves are formed in the metal pad；Deposition humidity sensor membrane layers are formed with filling the groove
The humidity sensor film.
Alternatively, the humidity sensor film selects Kapton.
The present invention is in order to solve problems of the prior art, there is provided a kind of new preparation method, in methods described
By the use of low temperature SiGe as structure sheaf, by the use of amorphous carbon as sacrificial material layer, CMOS-MEMS circuit vertical integration is formed
Humidity sensor and capacitance pressure transducer, and 2 axis accelerometers, effectively reduce overall chip area, can be effective
Improve chip wafer production efficiency and lift the function of single chip.
Fig. 2 is the preparation technology flow chart of semiconductor devices described in the embodiment of the invention, is specifically included
Following steps：
Step 201 provides substrate, in the substrate is formed with integrated circuit；
Step 202 vertically sequentially forms acceleration transducer, pressure sensor and humidity on the substrate and passes
Sensor, to realize in vertical direction integrated.
Embodiment 2
Present invention also offers a kind of semiconductor devices, the semiconductor devices is from the method preparation described in embodiment 1.
The semiconductor devices prepared by the method for the invention, by the use of low temperature SiGe as structure sheaf, is made using amorphous carbon
For sacrificial material layer, the humidity sensor and capacitance pressure transducer, and 2 axles for forming CMOS-MEMS circuit vertical integration adds
Speedometer, effectively reduces overall chip area, can effectively improve chip wafer production efficiency and lift single chip
Function.
Embodiment 3
Present invention also offers a kind of electronic installation, including the semiconductor devices described in embodiment 2.Wherein, semiconductor device
Part is the semiconductor devices described in embodiment 2, or the semiconductor devices that the preparation method according to embodiment 1 is obtained.
The electronic installation of the present embodiment, can be mobile phone, panel computer, notebook computer, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment, alternatively
Any intermediate products including the semiconductor devices.The electronic installation of the embodiment of the present invention, due to partly being led using above-mentioned
Body device, thus there is better performance.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and descriptive purpose, and be not intended to limit the invention in described scope of embodiments.In addition people in the art
Member is it is understood that the invention is not limited in above-described embodiment, teaching of the invention can also be made more kinds of
Variants and modifications, within these variants and modifications all fall within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (14)
1. a kind of preparation method of semiconductor devices, including：
Substrate is provided, and integrated circuit is formed with the substrate；
Acceleration transducer, pressure sensor and humidity sensor are sequentially formed on the substrate vertically, to realize
In vertical direction integrated；
The method for forming the acceleration transducer, the pressure sensor and the humidity sensor includes：
Substrate is provided, acceleration transducer bottom electrode and humidity sensor bottom interconnection layer are formed with the substrate；
Acceleration MEMS layer, and the acceleration above the acceleration transducer bottom electrode are formed on the substrate
Some acceleration sensing structures surrounded by the first sacrificial material layer and the second sacrificial material layer are formed in MEMS layer；
The 4th dielectric layer is formed in the middle part of the acceleration MEMS layer；
Electrode material layer is formed on the MEMS layer and the 4th dielectric layer and is patterned, to form pressure sensor bottom
Electrode, while exposing second sacrificial material layer；
The 3rd sacrifice material is formed in second sacrificial material layer and above the middle pressure sensor bottom electrode
The bed of material；
The 5th dielectric layer is formed on the pressure sensor bottom electrode of both sides, then in the 5th dielectric layer and described
Pressure sensing membrane is formed above 3rd sacrificial material layer；
The pressure sensing membrane is patterned, opening is formed, to expose the 3rd sacrificial material layer；
First sacrificial material layer, second sacrificial material layer and the 3rd sacrificial material layer are removed, to form acceleration
Degree sensor cavities and pressure sensor cavities；
Fill the opening；
The acceleration transducer bottom electrode, the pressure sensor membrane and the humidity sensor bottom interconnection layer in part
Top formed metal interconnection structure；
Humidity sensor film is formed in the interconnection structure above the humidity sensor bottom interconnection layer.
2. method according to claim 1, it is characterised in that form the acceleration transducer bottom electrode and described wet
The method of degree sensor base interconnection layer includes：
Substrate is provided；
The first dielectric layer is formed on the substrate, and on first dielectric layer forms mutually isolated acceleration transducer
Bottom electrode and the humidity sensor bottom interconnection layer；
Depositing first dielectric layer, is interconnected with covering the acceleration transducer bottom electrode and the humidity sensor bottom again
Layer；
First dielectric layer is patterned, it is mutual to expose the acceleration transducer bottom electrode and the humidity sensor bottom
Connect layer.
3. method according to claim 1, it is characterised in that the method for forming the acceleration MEMS layer includes：
The first MEMS layer is deposited on the substrate and is patterned, with the acceleration transducer bottom electrode and the humidity
Acceleration MEMS layer described in forming part on sensor base interconnection layer；
On the substrate below the top of depositing second dielectric layer to first MEMS layer；
In first sacrificial material layer of disposed thereon of the acceleration transducer bottom electrode and anti-etching and planarization described the
One sacrificial material layer to first MEMS layer, to fill the gap between first MEMS layer；
In second MEMS layer of disposed thereon of first MEMS layer and first sacrificial material layer, to form the acceleration
MEMS layer；
Deposit the 3rd dielectric layer and pattern, to isolate the acceleration MEMS layer.
4. method according to claim 3, it is characterised in that first MEMS layer selects low temperature SiGe layer；
Second MEMS layer selects low temperature SiGe layer；
First sacrificial material layer selects amorphous carbon；
Second dielectric layer selects oxide；
3rd dielectric layer selects oxide.
5. method according to claim 1, it is characterised in that the method for forming the acceleration sensing structure includes：
The acceleration MEMS layer is patterned, some grooves are formed in the acceleration MEMS layer and is located at described some
The acceleration sensing structure in groove；
The second sacrificial material layer is deposited, to fill the groove；
Anti-etching and planarization second sacrificial material layer is to the acceleration MEMS layer.
6. method according to claim 1, it is characterised in that form the 3rd sacrificial material layer of the formation and pressure sensing
The method of film includes：
The 3rd sacrificial material layer is deposited on the substrate；
The mask layer of patterning is formed in the 3rd sacrificial material layer, and the 3rd described in the mask layer as mask etch
Sacrificial material layer, to form covering in second sacrificial material layer and on the middle pressure sensor bottom electrode
Layer；
Deposition pressure sensing film materials layer is simultaneously patterned, with the top of the 5th dielectric layer and the 3rd sacrificial material layer
Form the pressure sensing membrane.
7. method according to claim 6, it is characterised in that the pressure sensing membrane selects SiGe layer.
8. method according to claim 1, it is characterised in that the method for forming the metal interconnection structure includes：
The 6th dielectric layer is deposited, to fill the opening；
Passivation layer is formed in the 6th dielectric layer, to cover the 6th dielectric layer；
The 6th dielectric layer is patterned, to form through hole and pad metal layer above the pressure sensor membrane, while
The top of the acceleration transducer bottom electrode being connected with the pressure sensor bottom electrode forms through hole and pad gold
Category layer；
The acceleration MEMS layer and the 6th dielectric layer above the humidity sensor bottom interconnection layer is patterned simultaneously,
To expose the humidity sensor bottom interconnection layer；
Through hole and metal pad are formed above the humidity sensor bottom interconnection layer, with mutual with the humidity sensor bottom
Even layer forms connection.
9. method according to claim 1, it is characterised in that the size of the opening is 0.5-0.6um.
10. method according to claim 1, it is characterised in that fill the opening from low-pressure oxidized nitride layer.
11. methods according to claim 1, it is characterised in that the method for forming the humidity sensor film includes：
The metal pad in the interconnection structure above the humidity sensor bottom interconnection layer is patterned, with the metal pad
It is middle to form some grooves；
Deposition humidity sensor membrane layers form the humidity sensor film to fill the groove.
12. methods according to claim 1, it is characterised in that the humidity sensor film selects Kapton.
The semiconductor devices that a kind of 13. methods based on described in one of claim 1 to 12 are prepared.
A kind of 14. electronic installations, including the semiconductor devices described in claim 13.
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