CN202614451U - Compound pressure transducer - Google Patents
Compound pressure transducer Download PDFInfo
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- CN202614451U CN202614451U CN 201220245172 CN201220245172U CN202614451U CN 202614451 U CN202614451 U CN 202614451U CN 201220245172 CN201220245172 CN 201220245172 CN 201220245172 U CN201220245172 U CN 201220245172U CN 202614451 U CN202614451 U CN 202614451U
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- interconnection structure
- resistive
- pressure sensor
- electrode
- pressure transducer
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Abstract
A compound pressure transducer comprises a substrate which is provided with a CMOS control circuit, a first interconnection structure and a second interconnection structure are arranged on the CMOS control circuit, the first interconnection structure and the second interconnection structure are electrically connected with the CMOS control circuit; a capacitance type pressure transducer arranged on the substrate and electrically connected with the first interconnection structure; a resistance type pressure transducer arranged on the capacitance type pressure transducer and electrically connected with the second interconnection structure, and a first dielectric layer is formed between the capacitance type pressure transducer and the resistance type pressure transducer; and a second dielectric layer which has an opening and is arranged on the resistance type pressure transducer, and the position of a pressure induction area is defined by the opening. Compared with the prior single mode pressure transducer, by adopting the novel pressure transducer, precision of pressure sensing can be enhanced, and scope of pressure sensing can be enlarged.
Description
Technical field
The utility model relates to micro electronmechanical field, relates in particular to the combined pressure sensor.
Background technology
MEMS (Microelectro Mechanical Systems, be called for short MEMS) is the forward position research field of the multidisciplinary intersection that on the microelectric technique basis, grows up, is a kind of technology that adopts semiconductor technology to make micro-electro-mechanical device.Compare with traditional electromechanical device, the MEMS device has obvious advantages aspect high temperature resistant, small size, the low-power consumption.Development through decades has become one of great sciemtifec and technical sphere of attracting attention in the world, and it relates to multiple subjects such as electronics, machinery, material, physics, chemistry, biology, medical science and technology, has broad application prospects.
Pressure transducer is a kind of transducer that pressure signal is converted into electric signal.Difference according to principle of work is divided into resistive pressure sensor and capacitance pressure transducer.The principle of capacitance pressure transducer, is come gaging pressure for through the electric capacity between pressure change top electrodes and the bottom electrode with this.The principle of work of resistive pressure sensor is come gaging pressure for to convert pressure into resistance change with this.
In the prior art, capacitance pressure transducer, and resistive pressure sensor all use separately, promptly use the pressure transducer of single-mode, and there are the restriction of pressure test scope and measuring accuracy in the pressure transducer of single-mode.In addition, the manufacturing approach of the pressure transducer of prior art some and CMOS technology can not be compatible, and the compatibility of some and CMOS technology is low.For example November in 2003 Granted publication on the 5th notification number be the Chinese patent disclosed " pressure transducer " of CN1126948C, its manufacturing approach can not with the CMOS process compatible.
The utility model content
The problem that the utility model solves is the restriction that the pressure transducer of the single-mode of prior art exists pressure test scope and measuring accuracy, and the pressure transducer manufacturing approach of prior art can not with the CMOS process compatible.
For addressing the above problem, the utility model provides a kind of combined pressure sensor, comprising:
Substrate, said substrate has the CMOS control circuit, is positioned at first interconnection structure and second interconnection structure on the said CMOS control circuit, and said first interconnection structure, second interconnection structure are electrically connected with said CMOS control circuit;
Be positioned at said suprabasil capacitance pressure transducer,, be electrically connected with said first interconnection structure;
Be positioned at the resistive pressure sensor on the said capacitance pressure transducer,, said resistive pressure sensor is electrically connected with said second interconnection structure, is first dielectric layer between said capacitance pressure transducer, and the resistive pressure sensor;
Be positioned at second dielectric layer with opening on the said resistive pressure sensor, said opening defines the position in pressure sensitive district.
Optional, said resistive pressure sensor comprises resistive conductor.
Optional, said first dielectric layer also covers said substrate, and said first dielectric layer has opening, and the opening of said first dielectric layer exposes the position that said second interconnection structure is electrically connected with resistive conductor;
The part of said resistive conductor is positioned at the sidewall and the bottom of the opening of said first dielectric layer, is electrically connected with said second interconnection structure.
Optional, said resistive conductor is many broken line types.
Optional, said capacitance pressure transducer, comprises: being positioned at said suprabasil first electrode, being positioned at second electrode of said first electrode top, is cavity between said first electrode and second electrode;
Said second electrode is electrically connected with said first interconnection structure.
Optional, said second electrode comprises: with the top board that said first electrode is oppositely arranged, be positioned at said top board sidewall all around, be positioned at the base plate that is electrically connected with said first interconnection structure in the said substrate, said top board, sidewall, base plate are structure as a whole.
Compared with prior art, the utlity model has following advantage:
The pressure transducer of present technique scheme is integrated in capacitance pressure transducer, and resistive pressure sensor in the substrate with CMOS control circuit; Be specially: resistive pressure sensor is positioned on the capacitance pressure transducer,, is first dielectric layer between said capacitance pressure transducer, and the resistive pressure sensor; Have second dielectric layer on the resistive pressure sensor, second dielectric layer has the opening of definition pressure sensitive zone position; Capacitance pressure transducer,, resistive pressure sensor respectively with substrate in first interconnection structure, second interconnection structure be electrically connected.Wherein, the test specification of capacitance pressure transducer, is bigger than the test specification of resistive pressure sensor; The remolding sensitivity of resistive pressure sensor is higher, and less pressure is had good sensing function.Under the bigger situation of pressure ratio; Pressure can make the electric capacity of capacitance type sensor and the resistance of resistive pressure sensor all change; Under this situation; The CMOS control circuit can adopt capacitance type sensor or resistance sensor gaging pressure as required, can also use the test result of two kinds of sensors to verify each other; Under the less situation of pressure ratio; The capacitance type sensor sensing is less than pressure; Pressure only can make the resistance of resistive pressure sensor change; That is to say under the less situation of pressure, to have only resistive pressure sensor can sense pressure, only can use the resistive pressure sensor gaging pressure.Based on above mechanism, the pressure transducer of present technique scheme can improve the precision of pressure-sensing with respect to the pressure transducer of prior art single-mode, enlarges the scope of pressure-sensing.
In specific embodiment, resistive pressure sensor comprises resistive conductor, and resistive conductor is many broken line types; With respect to linear resistive conductor; Increased the length of resistive conductor, when under the effect of resistive conductor at pressure deformation taking place, the variation of deformation is also corresponding bigger; Resistance change increases, the sensitivity that therefore can improve the resistive conductor pressure sensor.
Description of drawings
Fig. 1 is the cross-sectional view of the combined pressure sensor of the utility model specific embodiment;
Fig. 2 is pressure sensitive district in the combined pressure sensor of first embodiment, top board, resistive conductor three's a schematic layout pattern;
Fig. 3 is pressure sensitive district in the combined pressure sensor of second embodiment, top board, resistive conductor three's a schematic layout pattern;
Fig. 4 is the schematic flow sheet of formation method of the combined pressure sensor of the utility model specific embodiment.
Embodiment
For above-mentioned purpose, the feature and advantage that make the utility model can be more obviously understandable, the embodiment of the utility model is done detailed explanation below in conjunction with accompanying drawing.
Set forth detail in the following description so that make much of the utility model.But the utility model can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization under the situation of the utility model intension.Therefore the utility model does not receive the restriction of following disclosed embodiment.
Need to prove that the diagram in the utility model only plays the signal effect, play the purpose of explanation the utility model, the structure to the utility model does not limit.
Fig. 1 is the cross-sectional view along a-a direction among Fig. 2 of the combined pressure sensor of the utility model specific embodiment; Fig. 2 is the end face synoptic diagram of the combined pressure sensor of first embodiment; In conjunction with reference to figure 1 and Fig. 2; The combined pressure sensor of the utility model comprises: substrate 10, said substrate have CMOS control circuit (not shown); Be positioned at first interconnection structure 11 and second interconnection structure 12 on the said CMOS control circuit, said first interconnection structure 11, second interconnection structure 12 are electrically connected with said CMOS control circuit; Be positioned at the capacitance pressure transducer, 20 in the said substrate 10, capacitance pressure transducer, 20 is electrically connected with said first interconnection structure 11; Be positioned at the resistive pressure sensor 40 on the said capacitance pressure transducer, 20; Said resistive pressure sensor 40 is electrically connected with said second interconnection structure 12, is first dielectric layer 31 between said capacitance pressure transducer, 20 and the resistive pressure sensor 40; Be positioned at second dielectric layer 32 with opening 321 on the said resistive pressure sensor, said opening 321 defines the pressure sensitive district, and opening 321 is an annular opening.In the utility model, the CMOS control circuit in the substrate 10 is electrically connected with first interconnection structure 11, second interconnection structure 12, and it act as and converts capacitance signal and resistance signal into pressure signal.And, when the CMOS control circuit can also control survey pressure, be to use resistive pressure sensor also to be to use the capacitance pressure transducer, gaging pressure.
Continuation is with reference to figure 1; In the utility model specific embodiment; Capacitance pressure transducer, 20 comprises: being positioned at first electrode 21 in the said substrate 10, being positioned at second electrode 22 of said first electrode 21 tops, is cavity 23 between said first electrode 21 and second electrode 22; And second electrode 22 of capacitance pressure transducer, 20 is electrically connected with said first interconnection structure.
Concrete; Second electrode 22 comprises: the top board 221 that is oppositely arranged with said first electrode 21; Be positioned at the sidewall 222 around the said top board 221, be positioned at the base plate 223 that is electrically connected with said first interconnection structure 11 in the said substrate 10, said top board 221, sidewall 222, base plate 223 are structure as a whole.Top board 221 has opening 24, the first dielectric layers 31 with opening 24 sealings.Wherein, have conducting block 25 between the base plate 223 and first interconnection structure 11, both are electrically connected mutually through conducting block 25.In illustrated embodiment, the conducting block 25 and first electrode 21 are positioned at same one deck, and material is identical; In same technology, form; Can select the material of first electrode 21 and conducting block 25 is aluminium, but is not limited to aluminium, also can be for well known to a person skilled in the art other conductive materials; For example, silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.In addition, first electrode 21 is not limited to same one deck with conducting block 25, and material also can be different, also are not limited in same technology, form.
In the utility model, the material of second electrode 22 is germanium silicon, polysilicon or monocrystalline silicon.
Need to prove that in the utility model, the structure that capacitance pressure transducer, is not limited to describe in the specific embodiment also can be for well known to a person skilled in the art the capacitance pressure transducer, of other structures.
In figure 2, the first embodiment, resistive pressure sensor comprises resistive conductor 40, and this resistive conductor 40 is many astragals round.
Continuation is with reference to figure 1, and in addition, first dielectric layer 31 has opening 311, and opening 311 exposes the position that second interconnection structure 12 is electrically connected with resistive conductor.First dielectric layer 31 also covers said substrate; Resistive conductor is positioned on first dielectric layer, and the part of resistive conductor is positioned at the sidewall and the bottom of the opening of said first dielectric layer, is electrically connected with said second interconnection structure.In this specific embodiment, resistive conductor 40 is electrically connected with second interconnection structure 12 through conducting block 26.In illustrated embodiment, the conducting block 26 and first electrode 21 are positioned at same one deck, and material is identical; In same technology, form; Can select the material of first electrode 21 and conducting block 26 is aluminium, but is not limited to aluminium, also can be for well known to a person skilled in the art other conductive materials; For example, silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.In addition, first electrode 21 is not limited to same one deck with conducting block 26, and material also can be different, also are not limited in same technology, form.
In the utility model, the material of first dielectric layer 31 is monox, silicon nitride or well known to a person skilled in the art that other dielectric materials, the thickness range of first dielectric layer 31 are 0.1 ~ 1 micron.The thickness of first dielectric layer 31 is suitable not blocked up, if blocked up meeting causes capacitance pressure transducer, very blunt to the induction of pressure; If cross thinly, can cause first dielectric layer 31 too fragile, influence the reliability and the long term operation stability of device.
In first embodiment shown in Figure 2, resistive conductor is many astragals round, and each turn coil is square, but that each turn coil is not limited to is square, also can be the coil of other shapes, and is for example circular.Among first embodiment, the purpose of resistive conductor being processed many astragals round is: can increase the length of resistive conductor, make resistive conductor responsive more to the induction of pressure.
In the utility model, the shape of resistive conductor is not limited to many astragals round, also can be the resistive conductor of other shapes.Fig. 3 second implements pressure sensitive district 321, top board 22, resistive conductor 40a three's in the combined pressure sensor of row schematic layout pattern; In conjunction with reference to figure 3 and Fig. 1; In a second embodiment; Resistive pressure sensor comprises resistive conductor 40a, and this resistive conductor 40a is a turn coil, and is polyline shaped; The coil of resistive conductor is across opening 321, and promptly opening 321 exposes the periphery of resistive conductor.Because the whole winding of the resistive conductor of second embodiment exposes by opening 321, can make resistive conductor responsive more like this, the sensitivity that improves gaging pressure to pressure-sensing.
More than first embodiment and second embodiment enumerated the difformity of the resistive conductor of resistive pressure sensor, but it is merely exemplary illustration, can make those skilled in the art better understand the utility model.In the utility model, the shape of the resistive conductor of resistive pressure sensor can be various shapes, can select resistive conductor to be the for example many broken line types among first embodiment and second embodiment of many broken line types; Can increase the length of resistive conductor like this; When pressure made resistive conductor generation deformation, because resistive conductor length is big, the length of corresponding deformation also can increase; Can improve the induction sensitivity of resistive conductor like this, improve the precision of resistive pressure sensor pressure.
In the utility model, the material of resistive conductor is a titanium, and the titanium material is softer, can under the effect of pressure, produce deformation, and is responsive to pressure ratio.In the utility model, the material of resistive conductor is not limited to titanium, also can be for well known to a person skilled in the art the material that can be used for resistive pressure sensor, and for example germanium silicon, silver, aluminium, copper, platinum, gold, nickel, cobalt or their combination in any.
When concrete work, resistive pressure sensor and capacitance pressure transducer, are used for test pressure jointly, and wherein the test specification of capacitance pressure transducer, is bigger than the test specification of resistive pressure sensor; And the remolding sensitivity of resistive pressure sensor is higher, and less pressure is had good sensing function.Under the bigger situation of pressure ratio; Pressure can make the resistance of electric capacity and the resistive pressure sensor of capacitance type sensor all change under this situation; The CMOS control circuit can adopt capacitance type sensor or resistance sensor gaging pressure as required, can also use the test result of two kinds of sensors to verify each other; Under the less situation of pressure ratio, the capacitance type sensor sensing is less than pressure, and pressure only can make the resistance of resistive pressure sensor change, and that is to say, under the less situation of pressure, has only resistive pressure sensor can sense pressure.Based on above mechanism, so the pressure transducer of present technique scheme can improve the precision of pressure-sensing with respect to the pressure transducer of prior art single-mode, enlarges the scope of pressure-sensing.
Fig. 4 is the schematic flow sheet of formation method of the combined pressure sensor of the utility model specific embodiment, and with reference to figure 4, the formation method of the combined pressure sensor of the utility model specific embodiment comprises:
Step S41 provides substrate, and said substrate has the CMOS control circuit, is positioned at first interconnection structure and second interconnection structure on the said CMOS control circuit, and said first interconnection structure, second interconnection structure are electrically connected with said CMOS control circuit;
Step S42 forms first conductive layer in said substrate, graphical said first conductive layer forms first electrode;
Step S43 forms sacrifice layer, covers said first electrode and substrate, and graphical said sacrifice layer defines the position of second electrode, and exposes the position that first interconnection structure is connected with second electrode electricity;
Step S44 forms second conductive layer, covers said sacrifice layer and substrate after graphical, and graphical said second conductive layer forms second electrode, and first electrode and second electrode are two pole plates of capacitance pressure transducer;
Step S45 forms first dielectric layer, covers said first electrode, second electrode and substrate, and graphical said first dielectric layer forms opening in first dielectric layer, and said opening exposes the position that second interconnection structure is electrically connected with resistive pressure sensor;
Step S46 forms resistive layer, cover said first dielectric layer with and the sidewall and the bottom of opening, graphical said resistive layer forms the resistive conductor of resistive pressure sensor;
Step S47 forms opening on said second electrode, the sacrifice layer through after the removal graphically of the opening on second electrode forms cavity between first electrode and second electrode;
Step S48 forms second dielectric layer, covers said resistive conductor, and graphical said second dielectric layer forms opening in second dielectric layer, define the position in pressure sensitive district.
In the utility model specific embodiment; The material of first electrode of capacitance pressure transducer, is an aluminium, and the material of second electrode is a germanium silicon, and the resistive conductor of resistive pressure sensor is a Titanium; Therefore first electrode, second electrode and resistive conductor all can use deposition and the step of etching in the semiconductor technology to form; With the CMOS process compatible, therefore, can utilize the CMOS manufacturing process of standard to realize the integrated of CMOS control circuit and sensor.
Though the utility model with preferred embodiment openly as above; But it is not to be used for limiting the utility model; Any those skilled in the art are in spirit that does not break away from the utility model and scope; Can utilize the method and the technology contents of above-mentioned announcement that the utility model technical scheme is made possible change and modification, therefore, every content that does not break away from the utility model technical scheme; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of the utility model technical scheme according to the technical spirit of the utility model.
Claims (6)
1. a combined pressure sensor is characterized in that, comprising:
Substrate, said substrate has the CMOS control circuit, is positioned at first interconnection structure and second interconnection structure on the said CMOS control circuit, and said first interconnection structure, second interconnection structure are electrically connected with said CMOS control circuit;
Be positioned at said suprabasil capacitance pressure transducer,, be electrically connected with said first interconnection structure;
Be positioned at the resistive pressure sensor on the said capacitance pressure transducer,, said resistive pressure sensor is electrically connected with said second interconnection structure, is first dielectric layer between said capacitance pressure transducer, and the resistive pressure sensor;
Be positioned at second dielectric layer with opening on the said resistive pressure sensor, said opening defines the position in pressure sensitive district.
2. combined pressure sensor as claimed in claim 1 is characterized in that said resistive pressure sensor comprises resistive conductor.
3. combined pressure sensor as claimed in claim 2; It is characterized in that; Said first dielectric layer also covers said substrate, and said first dielectric layer has opening, and the opening of said first dielectric layer exposes the position that said second interconnection structure is electrically connected with resistive conductor;
The part of said resistive conductor is positioned at the sidewall and the bottom of the opening of said first dielectric layer, is electrically connected with said second interconnection structure.
4. combined pressure sensor as claimed in claim 2 is characterized in that said resistive conductor is many broken line types.
5. combined pressure sensor as claimed in claim 1; It is characterized in that; Said capacitance pressure transducer, comprises: being positioned at said suprabasil first electrode, being positioned at second electrode of said first electrode top, is cavity between said first electrode and second electrode;
Said second electrode is electrically connected with said first interconnection structure.
6. combined pressure sensor as claimed in claim 5; It is characterized in that; Said second electrode comprises: the top board that is oppositely arranged with said first electrode; Be positioned at said top board sidewall all around, be positioned at the base plate that is electrically connected with said first interconnection structure in the said substrate, said top board, sidewall, base plate are structure as a whole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220245172 CN202614451U (en) | 2012-05-29 | 2012-05-29 | Compound pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220245172 CN202614451U (en) | 2012-05-29 | 2012-05-29 | Compound pressure transducer |
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| Publication Number | Publication Date |
|---|---|
| CN202614451U true CN202614451U (en) | 2012-12-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220245172 Withdrawn - After Issue CN202614451U (en) | 2012-05-29 | 2012-05-29 | Compound pressure transducer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102692294A (en) * | 2012-05-29 | 2012-09-26 | 上海丽恒光微电子科技有限公司 | Composite pressure transducer and formation method thereof |
| CN103708409A (en) * | 2013-10-25 | 2014-04-09 | 张家港丽恒光微电子科技有限公司 | Pressure sensor and inertia sensor assembly and production method thereof |
| CN110411615A (en) * | 2019-07-01 | 2019-11-05 | 杭州电子科技大学 | A kind of MEMS touch sensor structure of high sensitivity |
-
2012
- 2012-05-29 CN CN 201220245172 patent/CN202614451U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102692294A (en) * | 2012-05-29 | 2012-09-26 | 上海丽恒光微电子科技有限公司 | Composite pressure transducer and formation method thereof |
| CN102692294B (en) * | 2012-05-29 | 2014-04-16 | 上海丽恒光微电子科技有限公司 | Composite pressure transducer and formation method thereof |
| CN103708409A (en) * | 2013-10-25 | 2014-04-09 | 张家港丽恒光微电子科技有限公司 | Pressure sensor and inertia sensor assembly and production method thereof |
| CN110411615A (en) * | 2019-07-01 | 2019-11-05 | 杭州电子科技大学 | A kind of MEMS touch sensor structure of high sensitivity |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20121219 Effective date of abandoning: 20140416 |
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| RGAV | Abandon patent right to avoid regrant |