CN202770456U - MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure - Google Patents
MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure Download PDFInfo
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- CN202770456U CN202770456U CN201220414725.1U CN201220414725U CN202770456U CN 202770456 U CN202770456 U CN 202770456U CN 201220414725 U CN201220414725 U CN 201220414725U CN 202770456 U CN202770456 U CN 202770456U
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Abstract
The utility model discloses an MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure. An MEMS carrying substrate is provided with MEMS film capacitive type pressure, temperature and humidity sensors which are arranged side by side. Electrodes, sacrificial layers, sensitive layers, sensitive films and protective layers of the three sensors adopt mutually matched structures and materials and therefore can be manufactured through an integrated surface micro-processing technology. The multi-parameter sensor structure provided by the utility model has the advantages of reducing the volume of components, simplifying the technical steps and being capable of decreasing the cost of sensor products to a certain extent. In addition, the wholly capacitive structure improves the application potential of the MEMS film capacitive type multi-parameter sensor structure in an inductive coupling based passive wireless sensing system.
Description
Technical field
The utility model relates to a kind of MEMS thin film capacitor type multi-parameter sensor structure, belongs to the MEMS sensor and makes the field.
Background technology
Development along with technology of Internet of things, need a large amount of sensors that dissimilar data are gathered, therefore the production of adopting batch minute manufacturing technology to carry out the MEMS sensor is promoting the sensor performance consistance, reduces sensor-based system energy consumption and sensor cost aspect and has great significance.Especially, in productive life, on the one hand, people pay close attention to a plurality of parameters (as: pressure, temperature, humidity, chemical composition etc.) in the test environment usually simultaneously, therefore, need to use different sensors respectively sensitive parameter to be gathered, for consistance, the miniaturization of system and the minimizing of cost that realizes technique, multiple MEMS sensor need to be integrated to be made and unified encapsulation.For example, the people such as Zhao Zhan of electronics research institute of the Chinese Academy of Sciences have successively proposed pressure, temperature, humidity three parameter sensors based on body silicon processing technique and processing film technology in 2004 and 2006, wherein pressure and humidity sensor have adopted capacitive structure, and temperature sensor has then adopted traditional film temperature meter structure; 2006, the people such as the Zhao Yulong of Xi'an Communications University have proposed a kind of integrated multi-parameter sensor of pressure, temperature, humidity and three axis accelerometer, its accelerometer and pressure transducer have adopted Bulk micro machining, and temperature and moisture sensors has then adopted the thin film fabrication scheme; 2009, the people such as the graduate Mathieu Hautefeuille of Ireland Tyndall country's microelectronics adopt the method for thin film fabrication technique and bulk silicon technological combination, integrated temperature, humidity, degree of corrosion, chemical gas and pneumatic sensor, the principle of work of sensor have comprised two kinds of resistance-type and condenser types.On the other hand, in some particular surroundings, sensing system be owing to the reason in environment or space can't arrange power supply, and the detection of parameter can't be undertaken by the wired connection of routine, needs to adopt the mode of wireless and passive to detect data transfer.The MEMS sensing system of wireless and passive is usually based on two kinds of principles, and one is based on the LC loop of inductive coupling, detects its resonance frequency with respect to the change of measured parameter; Two are based on the principle of surface acoustic wave.Wherein, the former changes by environmental parameter, and some key parameter (as: substrate spacing, medium specific inductive capacity etc.) changes capacitance in the MEMS capacitance structure, and then the resonance frequency in change loop, be the preferred version of measuring so select capacitance type sensor.2005, the A. D. DeHennis of University of Michigan and K. D. Wise carry out capacitive pressure, temperature and moisture sensors integrated, the sensing system that is used for passive and wireless, but three kinds of sensors are for making respectively, technique is loaded down with trivial details, and what use is body silicon processing technique, and the method for wafer bonding, and prepared product sensor volume is larger; Nearest 2011, the capacitive pressure that will use the thin-film technique manufacturing of people's successes such as the A. C. McNeil of Freescale Semiconductor and temperature sensor carried out integrated, but its sensor manufacturing is also more loaded down with trivial details.
Analyze above-mentioned research background as can be known, the existing more report of the at present manufacturing of MEMS multi-parameter sensor, wherein is no lack of the structure of plenary capacitance formula to be used for the wireless sourceless sensor system of inductive coupling, but generally speaking, the small product size of using Bulk micro machining to make is larger, and multiple sensors fails to realize integrated manufacturing, and loaded down with trivial details manufacturing process has also increased the cost of final products to a certain extent.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, a kind of structure and integrated manufacturing method thereof of MEMS thin film capacitor type multi-parameter sensor are provided, can be used for carrying out the detection of pressure, these three kinds of environmental parameters of temperature and humidity, and the structure of this sensor has adopted integrated processing film manufacturing process, reduced the volume of device, simplified processing step, in addition, the structure of its plenary capacitance has increased it based on the application potential in the passive wireless sensor system of inductive coupling.
According to the technical scheme that the utility model provides, described MEMS thin film capacitor type multi-parameter sensor structure comprises: the carrier substrate of MEMS device, MEMS Thin film capacitive pressure transducer, MEMS thin film capacitor type temperature sensor, MEMS thin film capacitor type humidity sensor; Described MEMS Thin film capacitive pressure transducer, MEMS thin film capacitor type temperature sensor and MEMS thin film capacitor type humidity sensor are set up in parallel on carrier substrate.
Be provided with top electrode and bottom electrode in the described MEMS Thin film capacitive pressure transducer, upper and lower two electrodes form the parallel plate capacitor structure; It is the afterwards cavity of the pressure transducer of generation of releasing sacrificial layer between top electrode and the bottom electrode; Described cavity carries out diaphragm seal by sealant, makes the atmospheric pressure value in the cavity keep constant; Described bottom electrode is arranged on the carrier substrate of bottom of cavity; Top electrode is arranged on the inboard at the top of cavity sealant, and is provided with the release aperture structure for the corrosion releasing sacrificial layer in the top electrode; Top electrode all links to each other with the external world with bottom electrode, forms electricity interlinkage at carrier substrate.
Be provided with top electrode and bottom electrode in the described MEMS thin film capacitor type temperature sensor, upper and lower two electrodes form the parallel plate capacitor structure; Described bottom electrode is arranged on the carrier substrate; Described top electrode is arranged on the inboard of two material cantilever designs, is inside structure; The outboard structure of two material cantilevers contacts with carrier substrate by anchor point; It is the interelectrode gap of temperature sensor that releasing sacrificial layer produces afterwards between top electrode and the bottom electrode; Described interelectrode gap is Open architecture; Top electrode all links to each other with the external world with bottom electrode, forms electricity interlinkage at carrier substrate.
Be provided with top electrode and bottom electrode in the described MEMS thin film capacitor type humidity sensor, upper and lower two electrodes form the parallel plate capacitor structure; It is humidity-sensitive layer between top electrode and the bottom electrode; Described bottom electrode is arranged on the carrier substrate of bottom of humidity-sensitive layer; Top electrode is arranged on the top of humidity-sensitive layer, and the top electrode outside is provided with protective layer structure; Run through top electrode and be provided with the humidity exploration hole structure that humidity-sensitive layer is contacted with external environment condition with protective layer structure; Top electrode all links to each other with the external world with bottom electrode, forms electricity interlinkage at carrier substrate.
Described top electrode is same material with bottom electrode and has identical thickness, and material can be titanium, chromium, gold, copper, aluminium, tungsten, platinum or its combination, and thickness is 20 nanometer to 200 nanometers.
Compared with prior art, the utility model has the advantages that:
1. the structure of the MEMS thin film capacitor type multi-parameter sensor that the utility model proposes can detect pressure, temperature and humidity parameter simultaneously, and capacitive structure can be applied in the wireless sourceless sensor system based on inductive coupling.
2. the structure of the MEMS thin film capacitor type multi-parameter sensor that the utility model proposes adopts integrated processing film technique to make, the product sensor small volume, and integrated technique is relatively simple, can reduce to a certain extent the cost of product sensor.
Description of drawings
Fig. 1 to 7 is the utility model implementation processing step cut-open view, wherein:
Fig. 1 is carrier substrate, and is provided with bottom electrode and the outside electrical interconnection of sensor of MEMS capacitance type sensor;
Fig. 2 is the making of sacrifice layer, humidity-sensitive layer;
Fig. 3 is the top electrode of MEMS capacitance type sensor and the making of other electrical interconnections;
Fig. 4 is the making of pressure transducer sealant, temperature sensor semi-girder and humidity sensor protective seam;
Fig. 5 is the corrosion of sacrifice layer, and the film sensitive structure of relief pressure sensor and temperature sensor forms cavity;
Fig. 6 is the airtight of pressure transducer sealant;
Fig. 7 is opening of humidity sensor exploration hole, the structure that resulting devices is finished.
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples.
As shown in Figure 7, adopted the structure of above-mentioned MEMS thin film capacitor type multi-parameter sensor in the present embodiment, having comprised: the carrier substrate 1 of MEMS device, MEMS Thin film capacitive pressure transducer 2, MEMS thin film capacitor type temperature sensor 3, MEMS thin film capacitor type humidity sensor 4; Above-mentioned three kinds of sensors are set up in parallel on carrier substrate 1.
As shown in Figure 7, be provided with top electrode 7 and bottom electrode 5 in the described MEMS Thin film capacitive pressure transducer 2, upper and lower two electrodes form the parallel plate capacitor structure; It is the afterwards cavity 8 of the pressure transducer 2 of generation of releasing sacrificial layer 19 between the upper and lower electrode; Above-mentioned cavity 8 carries out diaphragm seal by sealant 13, makes the atmospheric pressure value in the cavity 8 keep constant; Described bottom electrode 5 is arranged on the carrier substrate 1 of bottom of above-mentioned cavity 8; Described top electrode 7 is arranged on top inboard of above-mentioned cavity sealant 13 and is provided with release aperture structure 11 for corrosion releasing sacrificial layer 19; Top electrode 7 all links to each other with the external world with bottom electrode 5, forms electricity interlinkage 6 at carrier substrate 1.
Be provided with top electrode 7 and bottom electrode 5 in the described MEMS thin film capacitor type temperature sensor 3, upper and lower two electrodes form the parallel plate capacitor structure; Described bottom electrode 5 is arranged on the carrier substrate 1; Described top electrode 7 is arranged on the inboard of two material cantilever designs, is inside structure; The outboard structure 15 of two material cantilevers contacts with carrier substrate 1 by anchor point 14; Be the temperature sensor 3 interelectrode gaps 9 that releasing sacrificial layer 19 produces afterwards between the upper and lower electrode; Above-mentioned interelectrode gap 9 is Open architecture; Top electrode 7 all links to each other with the external world with bottom electrode 5, forms electricity interlinkage 6 at carrier substrate 1.
Be provided with top electrode 7 and bottom electrode 5 in the described MEMS thin film capacitor type humidity sensor 4, upper and lower two electrodes form the parallel plate capacitor structure; It is humidity-sensitive layer 10 between the upper and lower electrode; Described bottom electrode 5 is arranged on the carrier substrate 1 of bottom of above-mentioned humidity-sensitive layer 10; Top electrode 7 is arranged on the top of humidity-sensitive layer 10, and top electrode 7 outsides are provided with protective layer structure 17; Run through top electrode 7 and be provided with the humidity exploration hole structure 16 that humidity-sensitive layer 10 is contacted with external environment condition with protective layer structure 17; Top electrode 7 all links to each other with the external world with bottom electrode 5, forms electricity interlinkage 6 at carrier substrate 1.
The top electrode 7 of described MEMS thin film capacitor type pressure, temperature and moisture sensors is 30 to 200 nm of gold, and bottom electrode 5 is 30 to 200 nm of gold of 5 to 20 nanometer chromium and top thereof with sensor external electrical interconnection 6; Sacrifice layer 19 in the described MEMS thin film capacitor type pressure and temperature sensor production process is that polyimide PI2727(also can use the materials such as benzocyclobutene, epoxy resin or polymethylmethacrylate with humidity-sensitive layer 10 in the MEMS thin film capacitor type humidity sensor 4), its thickness is 100 nanometers to 50 micron; The outboard structure 15 of two material cantilevers of the sealant 13 of described MEMS Thin film capacitive pressure transducer 2, MEMS thin film capacitor type temperature sensor 3 is silicon nitride with the protective seam 17 of MEMS thin film capacitor type humidity sensor 4, and its thickness is 2 to 15 microns.
To shown in Figure 7, the structure of above-mentioned MEMS thin film capacitor type multi-parameter sensor can be passed through following processing step and realize such as Fig. 1, particularly:
(1) as shown in Figure 1, provide to carry the carrier substrate 1 of MEMS structure, and use magnetron sputtering method to deposit successively 5 to 20 nanometer chromium and 30 to 200 nano-Au films at described carrier substrate 1, use the method for ultraviolet lithography and corrosion that described gold thin film is carried out graphically, form the bottom electrode 5 of MEMS thin film capacitor type sensor and the electricity interlinkage 6 of device outside; Use 10.9% ceric ammonium nitrate solution to corrode chromium (also according to demand regulator solution concentration and temperature to regulate corrosion rate) under 21 degrees celsius, the aqueous solution of using potassium iodide-iodine (mass ratio is 4:1) of 50% is acid gilding (also according to demand regulator solution concentration and temperature with the adjusting corrosion rate) under 21 degrees celsius;
(2) as shown in Figure 2, use the method for spin coating that one deck humidity sensitive material polyimide PI2727 (being provided by HD Microsystems company) is provided at said structure, thickness is that the method for 100 nanometers to 50 micron use ultraviolet lithography and corrosion is carried out graphically described polyimide material, form MEMS thin film capacitor type pressure and temperature sensor 2, the humidity-sensitive layer 10 of 3 sacrifice layer 19 and MEMS thin film capacitor type humidity sensor 4, the part edge of described sacrifice layer 19 and humidity-sensitive layer 10 extends to beyond the edge of sensor lower electrode 52 to 20 microns, so that on realizing in follow-up flow process, bottom electrode 7,5 electric isolation; Using power is 100 watts, volumetric flow rate is 200 mark condition milliliter per minute (sccm, namely 0 degree centigrade, the fluid flow of per minute under 1 standard atmosphere condition) oxygen gas plasma corrodes (also the parameters such as adjusting gas flow, power, pressure, temperature are regulated corrosion rate according to demand) to polyimide PI2727 under the pressure condition of 13.3 handkerchiefs;
(3) as shown in Figure 3, use magnetron sputtering method to deposit 20 nanometer to 200 nano-Au films at said structure, use the method for ultraviolet lithography and corrosion that described gold thin film is carried out graphically, form top electrode 7 and the top electrode 7 and the outside electricity interlinkage that is connected of device of MEMS thin film capacitor type sensor 2,3,4, wherein be manufactured with the release aperture structure 11 for releasing sacrificial layer 19 in the top electrode of MEMS Thin film capacitive pressure transducer 2; The aqueous solution of using potassium iodide-iodine (mass ratio is 4:1) of 50% is acid gilding (also according to demand regulator solution concentration and temperature to regulate corrosion rate) under 21 degrees celsius;
(4) as shown in Figure 4, use magnetron sputtering method deposition 5 to 20 nanometer chromium at said structure, re-use 2 to 15 microns silicon nitride films of method deposition of plasma activated chemical vapour deposition, use the method for ultraviolet lithography and corrosion that described chromium thin film and silicon nitride film are carried out graphically, form the sealant 20 with the MEMS Thin film capacitive pressure transducer 2 of sacrifice layer release aperture 18, the outboard structure 15 of 3 pairs of material cantilever designs of MEMS thin film capacitor type temperature sensor and the anchor point 14 that is connected with carrier substrate 1 thereof, protective seam 17 with the MEMS thin film capacitor type humidity sensor 4 of humidity exploration hole structure 16; Use 10.9% ceric ammonium nitrate solution under 21 degrees celsius, to corrode chromium (also according to demand regulator solution concentration and temperature to regulate corrosion rate), using power is 60 watts, and fluoroform and nitrogen mixture body that volumetric flow rate is respectively 7.5 and 42.5 mark condition milliliter per minutes corrode (also the parameters such as adjusting gas flow, power, pressure, temperature are regulated corrosion rate according to demand) to silicon nitride under the pressure condition of 5 handkerchiefs;
(5) as shown in Figure 5, using power is 100 watts, volumetric flow rate is that the oxygen gas plasma of 200 mark condition milliliter per minutes is under the pressure condition of 13.3 handkerchiefs, by the sacrifice layer release aperture 18 in the sealant 20 of MEMS Thin film capacitive pressure transducer 2, release aperture structure 11 in the top electrode 7 and MEMS thin film capacitor type temperature sensor 3 interelectrode gaps 9, to pressure and temperature sensor 2, sacrifice layer 19 in 3 corrodes, thereby discharges MEMS structure (also adjusting gas flow according to demand, power, pressure, the parameters such as temperature are regulated corrosion rate);
(6) as shown in Figure 6, use the method for plasma enhanced chemical vapor deposition, be 30 handkerchiefs at pressure, temperature is in 300 degrees centigrade the reaction cavity, again deposit 2 to 15 microns silicon nitride films (also the parameters such as adjusting gas flow, power, pressure, temperature are regulated rate of sedimentation according to demand), method by ultraviolet lithography and corrosion seals sacrifice layer release aperture 18, forms the sealant 13 of airtight pressure transducer 2; Using power is 60 watts, and fluoroform and nitrogen mixture body that volumetric flow rate is respectively 7.5 and 42.5 mark condition milliliter per minutes corrode (also the parameters such as adjusting gas flow, power, pressure, temperature are regulated corrosion rate according to demand) to silicon nitride under the pressure condition of 5 handkerchiefs;
(7) as shown in Figure 7, use the method that ultraviolet lithography is graphical and corrode, in top electrode 7 structures of MEMS thin film capacitor type humidity sensor 4, produce humidity exploration hole structure 16; Use the aqueous solution of potassium iodide-iodine of 50% under 21 degrees celsius, corrode the gold copper-base alloy of top electrode 7 (also according to demand regulator solution concentration and temperature with the adjusting corrosion rate); Thereby finish the integrated manufacturing of the structure of MEMS thin film capacitor type multi-parameter sensor.
Claims (5)
1.MEMS thin film capacitor type multi-parameter sensor structure is characterized in that: the carrier substrate (1), MEMS Thin film capacitive pressure transducer (2), MEMS thin film capacitor type temperature sensor (3), the MEMS thin film capacitor type humidity sensor (4) that comprise the MEMS device; Described MEMS Thin film capacitive pressure transducer (2), MEMS thin film capacitor type temperature sensor (3) and MEMS thin film capacitor type humidity sensor (4) are set up in parallel on carrier substrate (1).
2. MEMS thin film capacitor type multi-parameter sensor structure as claimed in claim 1 is characterized in that, is provided with top electrode (7) and bottom electrode (5) in the described MEMS Thin film capacitive pressure transducer (2), and upper and lower two electrodes form the parallel plate capacitor structure; It is the afterwards cavity (8) of the pressure transducer of generation of releasing sacrificial layer between top electrode (7) and the bottom electrode (5); Described cavity (8) carries out diaphragm seal by sealant (13), makes the atmospheric pressure value in the cavity (8) keep constant; Described bottom electrode (5) is arranged on the carrier substrate (1) of bottom of cavity (8); Top electrode (7) is arranged on the inboard at the top of cavity sealant (13), and is provided with the release aperture structure (11) for the corrosion releasing sacrificial layer in the top electrode (7); Top electrode (7) all links to each other with the external world with bottom electrode (5), forms electricity interlinkage (6) at carrier substrate (1).
3. MEMS thin film capacitor type multi-parameter sensor structure as claimed in claim 1 is characterized in that, is provided with top electrode (7) and bottom electrode (5) in the described MEMS thin film capacitor type temperature sensor (3), and upper and lower two electrodes form the parallel plate capacitor structure; Described bottom electrode (5) is arranged on the carrier substrate (1); Described top electrode (7) is arranged on the inboard of two material cantilever designs, is inside structure; The outboard structure of two material cantilevers (15) contacts with carrier substrate (1) by anchor point (14); It is the interelectrode gap of temperature sensor (9) that releasing sacrificial layer produces afterwards between top electrode (7) and the bottom electrode (5); Described interelectrode gap (9) is Open architecture; Top electrode (7) all links to each other with the external world with bottom electrode (5), forms electricity interlinkage (6) at carrier substrate (1).
4. MEMS thin film capacitor type multi-parameter sensor structure as claimed in claim 1 is characterized in that, is provided with top electrode (7) and bottom electrode (5) in the described MEMS thin film capacitor type humidity sensor (4), and upper and lower two electrodes form the parallel plate capacitor structure; Be humidity-sensitive layer (10) between top electrode (7) and the bottom electrode (5); Described bottom electrode (5) is arranged on the carrier substrate (1) of bottom of humidity-sensitive layer (10); Top electrode (7) is arranged on the top of humidity-sensitive layer (10), and top electrode (7) outside is provided with protective layer structure (17); Run through top electrode (7) and be provided with the humidity exploration hole structure (16) that humidity-sensitive layer (10) is contacted with external environment condition with protective layer structure (17); Top electrode (7) all links to each other with the external world with bottom electrode (5), forms electricity interlinkage (6) at carrier substrate (1).
5. such as MEMS thin film capacitor type multi-parameter sensor structure as described in the claim 2,3 or 4, it is characterized in that, described top electrode (7) has identical thickness with bottom electrode (5), is 20 nanometer to 200 nanometers.
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