CN105984834B - A kind of integrated sensor and preparation method thereof - Google Patents
A kind of integrated sensor and preparation method thereof Download PDFInfo
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- CN105984834B CN105984834B CN201510059298.8A CN201510059298A CN105984834B CN 105984834 B CN105984834 B CN 105984834B CN 201510059298 A CN201510059298 A CN 201510059298A CN 105984834 B CN105984834 B CN 105984834B
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Abstract
The present invention provides a kind of integrated sensors and preparation method thereof, and method mainly includes：One substrate is provided, acceleration transducer, pressure sensor are sequentially formed in the substrate；Wherein, the acceleration transducer is vertically positioned at the substrate, and the pressure sensor is vertically positioned on the acceleration transducer, form the pressure sensor and accelerometer of CMOS MEMS circuit vertical integration, reduce 1/2 chip area, the integration degree of sensor chip is greatly improved, and reduces production cost, so as to increase economic efficiency；Sensor provided by the present invention is the 3-axis acceleration sensor and capacitance pressure transducer, of current mainstream simultaneously, can be widely applied to space industry and various electronic equipments.
Description
Technical field
The present invention relates to semiconductor transducer preparation fields, and in particular to a kind of integrated MEMS sensors and its preparation side
Method.
Background technology
It is higher and higher to the integration degree requirement of chip with the continuous development of technology.MEMS sensor is in vapour
The fields such as vehicle electronics, Industry Control, environmental monitoring, biomedicine are widely used.
The physical quantity variation of sensor needs to be converted to the variation of electric signal by control circuit.Traditional way is solely
Vertical sensor and control circuit is integrated by the form of encapsulation.The volume of this packaging body is relatively very big and whole
The reliability of body is also relatively poor.
Some new ways are to continue to make sensor on chip after the completion of IC control circuits at present, this vertical whole
The sensor of conjunction possesses smaller volume and higher reliability for the sensor of packing forms.But common more work(
The form that CMOS-MEMS chips are still CMOS+ pressure sensings+accelerometer can be combined.Wherein pressure sensor
(Pressure, P-Sensor) and accelerometer (Acceleration, ACC) are still two sets of relatively independent parallel systems,
The chip total area of this multifunctional combination is still comparable big.
With reference to shown in Fig. 1, although traditional technology can integrate accelerometer and pressure sensor on a chip,
Pressure sensor is not to stack setting with three axis accelerometer, so that being integrated with the MEMS sensor core of two kinds of devices
Piece surface area is larger；Further, since integrated sensor area is larger, it is also required to the bottom chip using larger area
And surface makes sensor on it, and currently used bottom chip cost is generally all more expensive, the bigger meaning of area
It is higher cost of manufacture.
Therefore, how effectively improving the integration degree of sensor and reducing manufacture cost is those skilled in the art one
The straight direction to be endeavoured to solve.
Invention content
The invention discloses a kind of integrated MEMS sensors and manufacturing process, can be by pressure sensor and acceleration transducer
It is integrated in a MEMS device, while ensure that device area.
A kind of integrated sensor preparation method, wherein, described method includes following steps：
Semiconductor structure is provided, the semiconductor structure includes a substrate, and the substrate is provided with the first dielectric
Layer, it is embedded in first dielectric layer to be provided with the first metal electrode；
After preparing acceleration transducer on first metal electrode, continue to prepare in the top of the acceleration transducer
Pressure sensor；
It deposits a passivation layer and forms metal interconnection structure.
Above-mentioned integrated sensor preparation method, wherein, the step of preparing the semiconductor structure, is as follows：
It provides a substrate, and after carrying out planarization process to the substrate, continues at the substrate and sink successively
One layer of oxide of product and the first metal layer；
It patterns the first metal layer and forms the first metal electrode, continue to deposit one layer of oxide and carry out flat
Change processing to the upper surface of first metal electrode, to form embedded first Jie for being provided with first metal electrode
Electric layer.
Above-mentioned integrated sensor preparation method, wherein, the step of preparing the acceleration transducer, is as follows：
Prepare the portion of upper surface that the first MES material layers are covered in first metal electrode；
Depositing second dielectric layer, and the top planes of second dielectric layer are less than the top horizontal of the first MES material layers
Face；
The first sacrificial material layer is deposited to carry out the groove between the first MES material layers on the first metal electrode of both sides
Filling；
Continue to prepare the 2nd MES material layers, and the 2nd MES material layers are simultaneously right over the first MES material layers
The upper surface of first sacrificial material layer is covered；
Deposition third dielectric layer and the upper surface for being polished to the 2nd MES material layers；
The 2nd MES material layers are patterned, form the fixation sensing block of acceleration transducer and positioned at fixed sensing block
Between mass block；
Wherein, bottom electrode of first metal electrode as the acceleration transducer.
Above-mentioned method, wherein, the first MES material layers and the 2nd MES material layers are SiGe.
Above-mentioned integrated sensor preparation method, wherein, the step of preparing the pressure sensor, is as follows：
After forming the fixed sensing block and mass block, the second sacrificial material layer of deposition is by the fixed sensing block and described
The side wall of mass block is coated；
It deposits the 4th dielectric layer and retains the 4th dielectric layer being covered between two side acceleration sensor bottom electrodes, system
Standby second metal electrode is covered in the 4th dielectric layer and the upper surface of sensing block is fixed in both sides；
Deposition third sacrificial material layer simultaneously carries out Patternized technique, retains the third between the second metal electrode of both sides
Sacrificial material layer；
After preparing the 5th dielectric layer in the upper surface of the second metal electrode of both sides, a pressure sensing membrane is prepared by the third
Sacrificial material layer and the 5th dielectric layer are covered, and carry out Patternized technique and several openings are formed in the pressure sensing membrane；
The first sacrificial material layer, the second sacrificial material layer and third sacrifice and material layer are removed, the acceleration is formed and passes
The cavity of sensor and pressure sensor；
The 6th dielectric layer is deposited to be covered in the surface of device and be filled the opening；
Wherein, bottom electrode of second metal electrode as the pressure sensor.
Above-mentioned method, wherein, first sacrificial material layer, the second sacrificial material layer, third sacrificial material layer are
Amorphous carbon (A-C).
Above-mentioned method, wherein, the 6th dielectric layer is TEOS.
Above-mentioned method, wherein, the material of the pressure sensing membrane is SiGe.
Above-mentioned method, wherein, the opening width is 0.5~0.6um.
Above-mentioned method, wherein, it prepares to form the metal interconnection structure with the following method：
It deposits a passivation layer to cover the 6th dielectric layer, Patternized technique is carried out, in the pressure sensor
Through-hole and pad metal layer are formed above film, while in the acceleration sensing being connected with the pressure sensor bottom electrode
The top of device bottom electrode forms through-hole and pad metal layer.
Above-mentioned method, wherein, the passivation layer is SiN.
Above-mentioned method, wherein, the acceleration transducer is 3-axis acceleration sensor；
The pressure sensor is capacitance pressure transducer,.
A kind of integrated sensor, wherein, including substrate, acceleration transducer and pressure are disposed in the substrate
Force snesor；
The acceleration transducer is located at the substrate, and the pressure sensor is vertically positioned at the acceleration and passes
On sensor；
Wherein, the acceleration transducer is 3-axis acceleration sensor, and the pressure sensor is passed for capacitive pressure
Sensor.
Above-mentioned integrated sensor, wherein, the acceleration transducer includes acceleration transducer bottom electrode, positioned at institute
It states and fixed sensing block is provided on acceleration transducer bottom electrode, and quality is provided between the fixed sensing block
Block；
The pressure sensor includes pressure sensor bottom electrode and pressure sensing membrane, the pressure sensor bottom of both sides
Portion's electrode, which is located on fixed sensing block and passes through a dielectric layer, to insulate, and the pressure sensing membrane is provided with several openings.
Above-mentioned integrated sensor, wherein, the integrated sensor is provided with metal interconnection structure, and the metal mutually links
Structure is located at the top of the acceleration transducer bottom electrode of side and the pressure sensing membrane of side, and the metal interconnection structure
Top is provided with a pad metal layer.
Above-mentioned integrated sensor, wherein, the fixed sensing block, the material of mass block are SiGe.
Above-mentioned integrated sensor, wherein, the pressure sensing membrane is provided with several openings, and the opening width is 0.5
~0.6um；
The material of the pressure sensing membrane is SiGe.
Above-mentioned integrated sensor, wherein, the upper surface of the integrated sensor is also covered with one dielectric layer, and dielectric
Layer is filled the opening of the pressure sensing membrane；
The dielectric layer is TEOS.
Since present invention employs above technical schemes, three axis accelerometer and pressure sensor can be integrated in well
On one asic chip, be conducive to reduce chip volume and area, improve the integrated level of chip, while saved and be manufactured into
This.
Description of the drawings
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, the present invention and its feature, outer
Shape and advantage will become more apparent upon.Identical label indicates identical part in whole attached drawings.Not deliberately proportionally
Draw attached drawing, it is preferred that emphasis is the purport of the present invention is shown.
Fig. 1 is that pressure sensor and three axis accelerometer are integrated schematic diagram on a chip in the prior art；
Fig. 2~13 are a kind of preparation flow figure of integrated sensor provided by the invention；
Figure 14 is a kind of schematic diagram of integrated sensor provided by the invention.
Specific embodiment
The specific embodiment of the present invention is further described below in conjunction with the accompanying drawings：
Embodiment one：
Present embodiment discloses a kind of integrated MEMS sensors preparation method, by preparation method provided by the present invention come
By acceleration transducer and pressure sensor Vertical collection on a chip, and then chip area can be effectively reduced, improves and pass
Integration degree of the sensor on chip, and reduce manufacture cost.Key step is as follows：
Semiconductor structure is provided, which includes a substrate, substrate is provided with the first dielectric layer,
Insertion is provided with the first metal electrode in first dielectric layer
After preparing acceleration transducer on the first metal electrode, continue to prepare pressure in the top of the acceleration transducer
Sensor；It deposits a passivation layer and forms metal interconnection structure.
It is as follows：
Step S1：One substrate 1 is provided first, and acceleration transducer bottom electrode 100 is formed on the substrate 1.Its
In, which can select substrate commonly used in the art, while integrated circuit (IC) is formed in substrate 1, such as can be with shape
Into there is application-specific integrated circuit (ASIC), details are not described herein for the specific composition of the application-specific integrated circuit.
After offer is formed with the substrate 1 of integrated circuit, need to form acceleration transducer bottom electricity on substrate 1
Pole 100, wherein a side acceleration sensor bottom electrode 100 ' is defeated using the signal as pressure sensor in subsequent steps
Outlet, structure as shown in Figure 2.Associated process steps are as follows：It is sequentially depositing one layer of oxide and the first metal layer on substrate 1,
And Patternized technique is carried out, the first metal electrode is formed on oxides, and first metal electrode is as acceleration transducer
Bottom electrode 100；Continue deposition oxide later and carry out planarization process, the first metal electrode is provided with to form insertion
100 the first dielectric layer 2, and the acceleration transducer bottom electrode is exposed, structure as shown in Figure 2.
Patterned correlation step is：One layer of photoresist (PR) of spin coating first covers the upper surface of the first metal layer
Lid by one there is the mask plate (mask) of photoengraving pattern to be exposed, developing process, to form opening in the photoresist later
Then pattern is performed etching downwards as etch mask using the photoresist for being formed with patterns of openings, removes extra the first metal layer,
Acceleration transducer bottom electrode 100 is formed, finally removes remaining photoresist.Simultaneously to cause lithographic results more preferable, may be used also
It coats one layer of bottom anti-reflection layer (BARC) in advance before spin coating photoresist, is reflected with the light reduced in exposure process,
So as to improve lithographic accuracy.
Step S2：Acceleration transducer is formed on acceleration transducer bottom electrode 100.
Specifically, first depositing the first MEMS material layer in the step S1 device surfaces prepared, Patternized technique is carried out later,
And retain be located at acceleration transducer bottom electrode 100 on the first MEMS material layer 3, the first MEMS material layer 3 using as
Acceleration MEMS material layer, structure as shown in Figure 3；Then the second dielectric layer 4, and second dielectric layer 4 are prepared in substrate
Thickness be less than the thickness of the first MEMS material 3, redeposited one layer of first sacrificial material layer 5, and carry out grinding technics later,
So that the top surface of the first sacrificial material layer 5 is concordant with the top of the first MEMS material layer 3, patterned process is carried out again later, with
Hole between both sides the first MEMS material layer 3 is filled, to form pressure after removing in subsequent steps
Sensor cavities, above step form structure shown in Fig. 4 after the completion.
Wherein, the material of the first MEMS material layer of deposition be SiGe, further preferably low temperature SiGe, the thickness of deposition
For 5~8K (K=1000 angstroms, hereinafter referred to as K).First sacrificial material layer 5 of deposition is amorphous carbon (A-C), the thickness of deposition
About 10K or so, and after first sacrificial material layer 5 is deposited, first is polished to using CMP (chemical mechanical grinding) technique
The upper surface of MEMS material layer 3.
In the first MEMS material layer 3 and the second MEMS material of disposed thereon layer 6 of the first sacrificial material layer 5.Specific steps
It is as follows：One layer of second MEMS material layer 6 is deposited first, is ground with after Patternized technique, is retained and be located at the first MEMS material
The second MEMS material layer 6 on layer 3, and the second MEMS material layer 6 is integrated setting in sensor regions.Later, deposition the
Three dielectric layers 7 simultaneously carry out Patternized technique, by the second MEMS material layer 6 in acceleration transducer region with being exported as signal
The second MEMS material layer 6 on the acceleration transducer bottom electrode 100 ' at end is isolated.As shown in Figure 5.
The second MEMS material layer 6 is performed etching using Patternized technique, and etching stopping is in the first sacrificial material layer 5
Upper surface forms the fixation sensing block and mass block of acceleration transducer.As shown in Figure 6.
Step S3：Pressure sensor is formed on acceleration transducer.It is as follows：
Deposit the second sacrificial material layer 8, the groove that is formed of the second MEMS material layer 6 will be etched and be filled, it is laggard
Row CMP process is polished to the upper surface of the second MEMS material layer 6, will wrap the side wall of fixed sensing block and mass block
It covers, as shown in Figure 7.
Specifically, second sacrificial material layer 8 is preferably the material identical with the first sacrificial material layer 5, i.e., this is second sacrificial
Domestic animal material layer 8 equally selects amorphous carbon (A-C)；Further, the thickness for depositing second sacrificial material layer 8 is 30~32K.
It deposits the 4th dielectric layer and carries out Patternized technique, and retain and be covered in two side acceleration sensor bottom electrodes
The 4th dielectric layer 9 between 100, depositing second metal layer simultaneously carry out patterned process, form the second metal electrode and are covered in the
The upper surface of sensing block is fixed in four dielectric layers 9 and both sides, which such as schemes as pressure sensor bottom electrode 10
Shown in 8.
Wherein, due to passing through patterned 4th dielectric layer 9 by the second sacrificial material layer 8 and positioned at the second sacrificial material layer
The second MEMS material layer 6 between 8 is covered, therefore after Patternized technique is carried out to the second metal layer of subsequent deposition,
The pressure sensor bottom electrode 10 formed and 6 shape of the 2nd MES material layers on acceleration transducer bottom electrode 100 '
Into contact, it is used to export the signal of pressure sensor bottom electrode 10 in subsequent steps.
Preferably, oxide can be selected in the material of the 4th dielectric layer 9, and the thickness of deposition is about 2K；Second metal of deposition
Layer thickness is about 8K, and material can select metal material commonly used in the art, such as Al, Cu etc., those skilled in the art can
Material is specifically chosen according to actual demand, it will not be described here.
One layer of third sacrificial material layer of deposition simultaneously carries out Patternized technique, retains between both sides the second MEMS material layer 6
Third sacrificial material layer 11.As shown in Figure 9.Specifically, the thickness for depositing the third sacrificial material layer is about 20K, and the third
The material of sacrificial material layer is identical with the material of the first sacrificial material layer, the second sacrificial material layer, is amorphous carbon (A-C).
One the 5th dielectric is prepared in the top of the pressure sensor bottom electrode 10 positioned at 11 both sides of third sacrificial material layer
Layer 12, the step of forming the 5th dielectric layer 12, are as follows：Deposit one layer of oxide being completely covered the surface of device, Ran Houjin
Row Patternized technique, to retain the 5th dielectric layer 12 positioned at 6 top of the second MEMS material layer of both sides.Wherein, the 5th is situated between
Electric layer 12 is isolated for pressure sensor bottom electrode 10 and pressure sensing membrane.
Formed after the 5th dielectric layer 12, continue deposit a stressor layer sensing membrane 13 be covered in third sacrificial material layer 11 with
And the 5th dielectric layer 12 upper surface, carry out Patternized technique, several openings are formed in pressure sensing membrane 13, and pass through these
Opening exposes third sacrificial material layer 11, and then forms cavity for follow-up removal sacrificial material layer and prepare.Such as Figure 10
It is shown.Wherein, the opening width formed in pressure sensing membrane 13 is preferably 0.5~0.6um, such as 0.5um, 0.52um,
0.53um, 0.55um, 0.58um, 0.6um or other the range value.
The first sacrificial material layer 5, the second sacrificial material layer 8 and third sacrificial material layer 11 are removed, is formed simultaneously acceleration
Sensor cavities and pressure sensor cavities.As shown in figure 11.Wherein, after forming acceleration transducer cavity, the shape in cavity
Into there is transportable mass block, by the mobile realization of the mass block to the sensing of acceleration change；Simultaneously positioned at bottom electricity
MEMS material layer on pole 100 is as fixed sensing block.
Optionally, O is passed through under conditions of high temperature2, due to the first sacrificial material layer 5, the second sacrificial material layer 8 and third
Sacrificial material layer 11 is amorphous carbon, O2Generation CO is reacted with amorphous carbon generation by the opening in pressure sensing membrane 132And
Discharge, and then it is formed simultaneously acceleration transducer cavity and pressure sensor cavities.
The opening in pressure sensing membrane 13 is filled using the 6th dielectric layer 14.It is specifically to be about using thickness
Opening is filled, and upon completion of filling by the TEOS of 20K as the 6th dielectric layer, 14 (TEOS materials of the 6th dielectric layer
Layer) surface of device is also carried out at the same time covering.As shown in figure 12.
So far, and then on acceleration transducer form pressure sensor.
Step S3：Deposit passivation layer simultaneously forms metal interconnection structure.It is as follows：One layer of passivation layer 15 of deposition covers
In the upper surface of the 6th dielectric layer 14, in acceleration transducer region, Patternized technique is carried out, on pressure sensing membrane 13
It is rectangular into through-hole (via) 16 and pad (pad) metal layer 17, for the signal of pressure sensing membrane 13 is exported；Simultaneously with
The top of the connected acceleration transducer bottom electrode 100 ' of pressure sensor bottom electrode 10 forms through-hole 18 and pad metal
Layer 19, to realize the output of pressure sensor fundic electrode signal, as shown in figure 13.
Further, bottom electrode 10 of the acceleration transducer bottom electrode 100 ' through MEMS material layer and pressure sensor
It is connected, the other end is connected with through-hole and pad metal layer, to realize the output of 10 signal of pressure sensor bottom electrode.
In an embodiment of the present invention, the material of passivation layer 15 is preferably SiN layer, and the thickness of deposition is 1K, through-hole 18,16
In filled with tungsten, pad metal layer 17,19 can be Al metal pads but be not limited to the material, those skilled in the art's root
The material of pad metal layer can be specifically chosen according to actual demand.
So far, correlation step has been basically completed, and subsequent technique uses the technical solution well known to the prior art, therefore not
It gives and repeating.The present invention provides a kind of new preparation method, in the method by the use of low temperature SiGe as acceleration transducer and
The structure sheaf of pressure sensor by the use of amorphous carbon as sacrificial material layer, forms the pressure of CMOS-MEMS circuit vertical integration
Sensor and accelerometer reduce 1/2 chip area, greatly improve the integration degree of sensor chip；Into one
Step, the reduction of chip area then directly brings the reduction of production cost, so as to increase economic efficiency.It is provided by the present invention simultaneously
Sensor be current mainstream 3-axis acceleration sensor and capacitance pressure transducer, can be widely applied to space industry and
Various electronic equipments.
Embodiment two
The present invention also provides a kind of integrated sensors, are shapes prepared by the preparation method provided using embodiment one
Into it will not go into details for correlation step.With reference to shown in Figure 14, including substrate 1000, acceleration is disposed on substrate 1000
Sensor 2000 and pressure sensor 3000.Acceleration transducer 2000 is vertically positioned on substrate 1000, and pressure sensor
3000 are vertically positioned on acceleration transducer 2000.Acceleration transducer 2000 be 3-axis acceleration sensor, pressure sensing
Device 3000 is capacitance pressure transducer,.Cavity is formed between pressure sensor 3000 and acceleration transducer 2000, and should
Pressure sensor 3000 and the periphery of acceleration transducer 2000 are surrounded by oxide 4000；Meanwhile pressure sensor
3000 tops are additionally provided with a passivation layer 3006, and the material of passivation layer 3006 is SiN.
In an embodiment of the present invention, which can select substrate commonly used in the art, while the shape in substrate 1
Into having integrated circuit (IC), such as could be formed with the asic chip of application-specific integrated circuit.
Acceleration transducer 2000 includes acceleration transducer bottom electrode 2001, wherein the acceleration sensing positioned at side
Signal output end of the device bottom electrode 2001 ' as pressure sensor 2000.Positioned at acceleration transducer bottom electrode 2001 it
On be provided with MEMS material layer 2002, and moveable mass block 2003, quality are provided between MEMS material layer 2002
The MEMS material layer 2002 of 2003 both sides of block is the fixation sensing block of acceleration transducer.Pass through the mobile realization of mass block 2003
To the sensing of acceleration change, and pass through bottom electrode 2001 ' and exported.
Pressure sensor 3000 includes pressure sensor bottom electrode 3001 and pressure sensing membrane 3002, the pressure of both sides
Sensor base electrode 3001, which is located on acceleration transducer bottom electrode 2001 and passes through a dielectric materials layer 3003, to carry out
Insulation, dielectric materials layer 3003 are preferably oxide.Pressure sensing membrane 3002 is provided with several openings, and the width of those openings
For 0.5~0.6um, for example, 0.5um, 0.52um, 0.53um, 0.55um, 0.58um, 0.6um or other the range value；It should
A little openings are filled by oxide 3008, it is preferred that oxide 3008 is TEOS material layers or other Low Pressure Oxygen compounds.
Dielectric layer 3007 is provided between intermediate pressure sensor bottom electrode 3001 and acceleration transducer 2000, it should
Dielectric layer 3007 is oxide layer.
Acceleration transducer 2000 and pressure sensor 3000 are both provided with metal interconnection structure, the metal interconnection structure position
In the top of the pressure sensing membrane 3002 of the pressure sensor bottom electrode 2001 ' and side of side.
Specifically, the metal interconnection structure 2004 of acceleration transducer 2000 is through MEMS material layer 2002 and and acceleration
Sensor base electrode 2001 ' forms contact；The top of the metal interconnection structure 3004 of pressure sensor 3000 and wherein side
Pressure sensing membrane 3002 upper surface formed contact.Further, the top of metal interconnection structure 2004,3004 is set respectively
There is a pad metal layer 2005,3005.
Above-mentioned metal interconnection structure is preferably filled with as copper, and pad metal layer 2005,3005 can be Al metal pads but simultaneously
It is not limited to the selection.
In conclusion a kind of integrated sensor provided by the present invention, by the way that pressure sensor and 3-axis acceleration are passed
Sensor Vertical collection on a chip, reduces 1/2 chip area, greatly improves the integration degree of sensor chip；
Further, the reduction of chip area then directly brings the reduction of production cost, so as to increase economic efficiency.Institute of the present invention simultaneously
The sensor of offer is the 3-axis acceleration sensor and capacitance pressure transducer, of current mainstream, can be widely applied to space flight neck
Domain and various electronic equipments.
Presently preferred embodiments of the present invention is described above.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, wherein the equipment and structure be not described in detail to the greatest extent are construed as giving reality with the common mode in this field
It applies；Any those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the disclosure above
Methods and technical content technical solution of the present invention is made many possible changes and modifications or be revised as equivalent variations etc.
Embodiment is imitated, this is not affected the essence of the present invention.Therefore, every content without departing from technical solution of the present invention, foundation
The technical spirit any simple modifications, equivalents, and modifications made to the above embodiment of the present invention, still fall within the present invention
In the range of technical solution protection.
Claims (15)
1. a kind of integrated sensor preparation method, which is characterized in that described method includes following steps：
Semiconductor structure is provided, the semiconductor structure includes a substrate, and the substrate is provided with the first dielectric layer, institute
It states insertion in the first dielectric layer and is provided with the first metal electrode；
After preparing acceleration transducer on first metal electrode, continue to prepare pressure in the top of the acceleration transducer
Sensor；
It deposits a passivation layer and forms metal interconnection structure；
The step of preparing the acceleration transducer is as follows：
Prepare the portion of upper surface that the first MEMS material layer is covered in first metal electrode；
Depositing second dielectric layer, and the top planes of second dielectric layer are less than the top planes of the first MEMS material layer；
The first sacrificial material layer is deposited to be filled the groove between the first MEMS material on the first metal electrode of both sides；
Continue to prepare the second MEMS material layer, and the second MEMS material layer simultaneously will right over the first MEMS material layer
The upper surface of first sacrificial material layer is covered；
Deposition third dielectric layer and the upper surface for being polished to the second MEMS material layer；
The second MEMS material layer is patterned, forms the fixation sensing block of acceleration transducer and between fixed sensing block
Mass block；
Wherein, bottom electrode of first metal electrode as the acceleration transducer；
The pressure sensor includes pressure sensor bottom electrode and pressure sensing membrane；
The pressure sensing membrane is provided with several openings；
The opening width is 0.52um or 0.53um or 0.55um or 0.58um.
2. the method as described in claim 1, which is characterized in that the step of preparing the semiconductor structure is as follows：
It provides a substrate, and after carrying out planarization process to the substrate, continues at the substrate and be sequentially depositing one
Layer oxide and the first metal layer；
It patterns the first metal layer and forms the first metal electrode, continue to deposit one layer of oxide and carry out at planarization
Reason is to the upper surface of first metal electrode, to form embedded first dielectric for being provided with first metal electrode
Layer.
3. the method as described in claim 1, which is characterized in that the first MEMS material layer and the second MEMS material layer are
SiGe。
4. the method as described in claim 1, which is characterized in that the step of preparing the pressure sensor is as follows：
After forming the fixed sensing block and mass block, the second sacrificial material layer is deposited by the fixed sensing block and the quality
The side wall of block is coated；
It deposits the 4th dielectric layer and retains and be covered in the 4th dielectric layer between two side acceleration sensor bottom electrodes, prepare the
Two metal electrodes are covered in the 4th dielectric layer and the upper surface of sensing block is fixed in both sides；
Deposition third sacrificial material layer simultaneously carries out Patternized technique, retains the third sacrifice between the second metal electrode of both sides
Material layer；
After preparing the 5th dielectric layer in the upper surface of the second metal electrode of both sides, prepare a pressure sensing membrane and sacrifice the third
Material layer and the 5th dielectric layer are covered, and carry out Patternized technique and several openings are formed in the pressure sensing membrane；
Remove the first sacrificial material layer, the second sacrificial material layer and third sacrificial material layer, formed the acceleration transducer and
The cavity of pressure sensor；
The 6th dielectric layer is deposited to be covered in the surface of device and be filled the opening；
Wherein, bottom electrode of second metal electrode as the pressure sensor.
5. method as claimed in claim 4, which is characterized in that first sacrificial material layer, the second sacrificial material layer, third
Sacrificial material layer is amorphous carbon.
6. method as claimed in claim 4, which is characterized in that the 6th dielectric layer is TEOS.
7. method as claimed in claim 4, which is characterized in that the material of the pressure sensing membrane is SiGe.
8. method as claimed in claim 4, which is characterized in that prepare to form the metal interconnection structure with the following method：
It deposits a passivation layer to cover the 6th dielectric layer, Patternized technique is carried out, in the pressure sensor membrane
It is rectangular into through-hole and pad metal layer, while at the acceleration transducer bottom being connected with the pressure sensor bottom electrode
The top of portion's electrode forms through-hole and pad metal layer.
9. method as claimed in claim 8, which is characterized in that the passivation layer is SiN.
10. the method as described in claim 1, which is characterized in that the acceleration transducer is 3-axis acceleration sensor；
The pressure sensor is capacitance pressure transducer,.
11. a kind of integrated sensor, which is characterized in that including substrate, acceleration sensing is disposed in the substrate
Device and pressure sensor；
The acceleration transducer is located at the substrate, and the pressure sensor is vertically positioned at the acceleration transducer
On；
Wherein, the acceleration transducer is 3-axis acceleration sensor, and the pressure sensor is capacitance pressure transducer,；
The acceleration transducer includes：
Acceleration transducer bottom electrode is provided with fixed sensing block on the acceleration transducer bottom electrode, and
Mass block is provided between the fixed sensing block；
The pressure sensor includes pressure sensor bottom electrode and pressure sensing membrane, the pressure sensor bottom electricity of both sides
Pole, which is located on fixed sensing block and passes through a dielectric layer, insulate, and the pressure sensing membrane is provided with several openings；
The opening width is 0.52um or 0.53um or 0.55um or 0.58um.
12. integrated sensor as claimed in claim 11, which is characterized in that the integrated sensor is provided with metal and mutually links
Structure, the metal interconnection structure are located at the top of the acceleration transducer bottom electrode of side and the pressure sensing membrane of side,
And it is provided with a pad metal layer at the top of the metal interconnection structure.
13. integrated sensor as claimed in claim 11, which is characterized in that the fixed sensing block, the material of mass block are equal
For SiGe.
14. integrated sensor as claimed in claim 11, which is characterized in that
The material of the pressure sensing membrane is SiGe.
15. integrated sensor as claimed in claim 11, which is characterized in that the upper surface of the integrated sensor is also covered with
One dielectric layer, and dielectric layer is filled the opening of the pressure sensing membrane；
The material of the dielectric layer is TEOS.
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