CN103508412B - The method for packing of pressure sensor chip and pressure sensor - Google Patents
The method for packing of pressure sensor chip and pressure sensor Download PDFInfo
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- CN103508412B CN103508412B CN201310412678.6A CN201310412678A CN103508412B CN 103508412 B CN103508412 B CN 103508412B CN 201310412678 A CN201310412678 A CN 201310412678A CN 103508412 B CN103508412 B CN 103508412B
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Abstract
The invention discloses a kind of method for packing and pressure sensor of pressure sensor chip, comprise step: provide a pressure sensor chip, MEMS layer forms protective layer, described protective layer exposes described weld pad; Above described protective layer, form sacrifice layer, described sacrifice layer exposes the position of described weld pad; The first metal layer is formed above described weld pad; The first metal layer and described sacrifice layer form the second metal level; Etch described second metal level, form the soldered ball be positioned on the first metal layer.In the present invention in the step of etching sacrificial layer and metal interconnecting layer; because matcoveredn protects thin location corresponding to the groove of inductive means; make inductive means injury-free like this; improve the reliability of device greatly; make pressure sensor chip to utilize BGA package, thus reduce package dimension, make the volume-diminished of device; cost is lower, and product is optimized.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of method for packing of pressure sensor chip and device.
Background technology
MEMS (Micro-Electro-MechanicalSystems, MEMS) is that a kind of integrability is produced, and integrates microdevice or the system of micro mechanism, microsensor, micro actuator and signal transacting and control circuit.It grows up along with semiconductor integrated circuit Micrometer-Nanometer Processing Technology and ultraprecise machining technology evolves.The microelectronic component of MEMS technology is adopted to have very wide application prospect in Aeronautics and Astronautics, environmental monitoring, biomedicine and all spectra that almost people touch.Relative to traditional frame for movement, the size of MEMS is less, maximumly be no more than one centimetre, even be only several micron, device layer thickness is wherein just more small, along with the introducing of semiconductor technology, utilize semi-conducting material and reduce further with the MEMS chip size that cmos compatible technique makes.Wherein micro mechanical structure is as the most important part of sensing, transmission and motion, and therefore micro mechanical structure is reliably complete, determines the excellent of the function of MEMS.
After CMOS chip or MEMS chip complete, all to encapsulate.Namely the circuit pin on chip, connect with wire and guide to external lug place, to be connected with other device.Packing forms refers to the shell of chip.It not only plays a part to install, fixing, sealing, protect IC and strengthen the aspects such as electric heating property; but also be wired on the pin of package casing by the contact on chip; these pins are connected with other devices by the wire on printed circuit board (PCB) again, thus realize the connection of inside chip and external circuit.
At present, the packing forms that CMOS chip is conventional has spherical point contacts array (BGA-ballgridarray) and gold thread bonding (WB-WireBond).BGA produces spherical salient point in order to replace pin at the back side of substrate by presentation, at the front of substrate assembling chip.Pin can, more than 200, be the one encapsulation of many pins.The advantage of BGA package has: input and output pin number increases greatly, and pin-pitch is large, adds that it has the auto-alignment function with circuitous pattern, thus improves assembly yield, electric heating property thus be improved, the reliable and stable work of circuit.
WB refers to use the interface of High Purity Gold bundle of lines chip and the interface bonding of substrate.The shortcoming of WB encapsulation technology is that package dimension is more much larger than bare chip size, and probably than the large 10%-100% of bare chip not etc., the area of bare chip own is less, and the ratio that after WB encapsulation causes encapsulation, size increases is larger for package area.BGA technology can realize CSP encapsulation (chipscalepackage), and namely bare chip area and the rear area ratio of encapsulation are close to 1:1.BGA technology is that metal ball is planted in position chip front side being connected weld pad, then by chip inverse bonding on substrate, so the metal between chip and substrate connects do not increase extra area, the size therefore after encapsulation is substantially equal with bare chip size.
Traditional pressure sensor is by two chips, a CMOS chip and a MEMS chip are carried out system in package (SIP-SystemInaPackage) and are formed on a face of same substrate, signal between two chips connects, and needs to connect with gold thread, and namely WB routing connects.Because there are two chips, therefore also cannot use BGA technology, chip cannot be planted metal ball with front and is and substrate welding, again with an other chips welding.Gold thread/copper cash/the aluminum steel of WB needs certain camber in addition, thus encapsulation can not do very thin, package thickness is also the thinnest also at about 1mm.Therefore WB encapsulation causes the encapsulation volume of sensor larger.
Summary of the invention
The technical problem to be solved in the present invention is just to provide a kind of method for packing and pressure sensor of pressure sensor chip, reduces the package dimension of pressure sensor.
In order to solve the problems of the technologies described above, the invention provides a kind of method for packing of pressure sensor chip, comprise step: provide a pressure sensor chip, it comprises cmos circuit layer and is positioned at the MEMS layer above cmos circuit layer, has weld pad on MEMS layer surface; Described MEMS layer forms protective layer, and described protective layer exposes described weld pad; Above described protective layer, form sacrifice layer, described sacrifice layer exposes the position of described weld pad; The first metal layer is formed above described weld pad; The first metal layer and described sacrifice layer form the second metal level; Etch described second metal level, form the soldered ball be positioned on the first metal layer.
Present invention also offers a kind of pressure sensor in addition, comprising: cmos circuit layer; Be positioned at the MEMS layer on described cmos circuit layer; Be positioned at the weld pad on described MEMS layer; Described weld pad has the first metal layer; Described the first metal layer has soldered ball.
The method for packing of pressure sensor chip of the present invention and pressure sensor are compared with existing pressure sensor: because matcoveredn protects thin location corresponding to the groove of inductive means; make inductive means injury-free like this; improve the reliability of device greatly; pressure sensor chip is made to utilize BGA package; thus reduce package dimension; make the volume-diminished of device, cost is lower, and product is optimized.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the pressure sensor package method of one embodiment of the invention;
Fig. 2 ~ Fig. 5 is the pressure sensor package method schematic diagram of one embodiment of the invention.
Detailed description of the invention
Traditional pressure sensor is by two chips, a CMOS chip and a MEMS chip are carried out system in package (SIP-SystemInaPackage) and are formed on a face of same substrate, signal between two chips connects, and needs to connect with gold thread, and namely WB routing connects.Because there are two chips, therefore also cannot use BGA technology, chip cannot be planted metal ball with front and is and substrate welding, again with an other chips welding.Gold thread/copper cash/the aluminum steel of WB needs certain camber in addition, thus encapsulation can not do very thin, package thickness is also the thinnest also at about 1mm.Therefore WB encapsulation causes the encapsulation volume of sensor larger.
The pressure sensor of another patented technology of the applicant is make use of in the present invention, sensor includes cmos circuit layer and is positioned at the MEMS layer above CMOS in a chip, utilizes and interconnect with the interconnection layer of CMOS technology compatibility between cmos circuit layer and MEMS layer.For this sensor chip, if utilize WB to encapsulate there is the larger problem of encapsulation volume equally, traditional BGA package existence MEMS exposed to top layer is utilized to cause the problem of damage.
For the problems referred to above, after inventor studies, obtain the method for packing of pressure sensor of the present invention, Fig. 1 is the schematic flow sheet of the pressure sensor package method of one embodiment of the invention, and as shown in Figure 1, it comprises the following steps:
S10 a: pressure sensor chip is provided, it comprises cmos circuit layer and is positioned at the MEMS layer above cmos circuit layer, has weld pad on MEMS layer surface;
S20: form protective layer on described MEMS layer, described protective layer exposes described weld pad;
S30: form sacrifice layer above described protective layer, described sacrifice layer exposes the position of described weld pad;
S40: form the first metal layer above described weld pad;
S50: form the second metal level on the first metal layer and described sacrifice layer;
S60: etch described second metal level, forms the soldered ball be positioned on the first metal layer.
Fig. 2 ~ Fig. 4 is the pressure sensor package method schematic diagram of one embodiment of the invention, is described in detail to the pressure sensor package method of one embodiment of the invention below in conjunction with Fig. 1 to Fig. 4.
First with reference to figure 2, provide a pressure sensor chip 100, it MEMS layer 120 comprising cmos circuit layer 110 and be positioned at above cmos circuit layer 110, on MEMS layer 120 surface, there is weld pad 130.
In the present embodiment, concrete, MEMS layer 120 is the effects realizing pressure sensitive, therefore inductive means 121 is comprised, inductive means 121 is suspended on cavity 122, edge is by being pressed on the substrate of cavity 122 sidewall, inductive means 121 part be suspended on cavity 122 has the first electrode 123, there is in substrate bottom cavity 122 the second electrode 124, first electrode 123 and the second electrode 124 correspondence, form electric capacity, when inductive means 121 is subject to the effect of external pressure along when moving perpendicular to substrate surface direction, first electrode 123 and the second electrode 124 relative motion, between distance change, thus the electric capacity between the first electrode 123 and the second electrode 124 changes, just can measure the value obtaining external pressure further.
In order to ensure the accuracy of pressure test, inductive means 121 is usually very thin, just has good ductility so under external force, and sensitiveer to the induction of pressure.In order to increase sensitivity inductive means 121 by the part be pressed on the substrate of cavity sidewalls, namely inductive means 121 near a circle of cavity sidewalls to etch very thin, can see having groove 128 at inductive means 121 near a circle of cavity sidewalls from Fig. 2, such inductive means 121 is responsive for the induction of pressure.In the present embodiment, the position that this groove 128 makes inductive means 121 be connected with substrate becomes very thin.
Traditional pressure sensor is made up of CMOS chip and MEMS chip two chips, and a kind of method is arranged on the same surface of substrate, utilizes the packaged type of WB to carry out encapsulation and connects.Another kind method be CMOS chip together with MEMS chip bonding laminates, utilize the packaged type of WB to carry out being connected on substrate.But the packaged type of WB makes encapsulation volume very large, and due to the inductive means of pressure sensor be exposed to outside cavity, and be positioned at cavity top, the part be connected with substrate has again groove 128, if therefore with the packaged type of BGA, damage can be caused to the position of groove, thus the inductive means of pressure sensor was lost efficacy.
Then with reference to figure 3, in the present embodiment, MEMS layer 120 and weld pad 130 form passivation layer 135.Concrete, the method forming passivation layer 135 can be: chemical vapor deposition.This passivation layer 135 can be protected the surface of device, reduces the damage be subject in technical process.But because passivation layer is not finally removed, therefore very thin, can not filling groove 128.
Continue with reference to figure 3, in the present invention in order to apply BGA package technology, improve, add step S20 to original BGA package method, described MEMS layer 120 forms protective layer 140, described protective layer 140 exposes described weld pad.Protective layer 140 filling groove 128.The region thinner to the inductive means 121 of this groove 128 correspondence is protected.
In the present embodiment, the method forming protective layer 140 is: spin coating mode, namely first drops in crystal column surface home position by polyamide or photoresist, then by High Rotation Speed wafer mode, polyamide or photoresistance is coated in crystal column surface uniformly.Spin-on material viscosity is 0.1 milli Pascal. second is to 500 milli Pascals. and second, spin-on material is sprayed onto crystal column surface from specific nozzle, the internal diameter of nozzle can at 1um to 2000um, the pressure of nozzle can at 1.1Bar ~ 5Bar, spin coating speed is 300 revolutions per seconds to 2000 revolutions per seconds, after polyamide or photoresistance gluing, through a low-temperature bake by adhesive curing, temperature is probably at 100-160 DEG C, enter litho machine more afterwards, polyamide or photoresistance are exposed by design layout, again the wafer after exposure is put into developer solution to soak, remove unwanted polyamide or photoresistance, for our this road technique, be exactly polyamide or the photoresistance of removing weld pad surface.Finally carry out a high-temperature baking again, patterned polyamide or photoresistance are stablized, temperature is probably at 250-400 DEG C.Because protective layer 140 plays a protective role to MEMS, it covers MEMS, therefore the manufacture craft of this protective layer 140 is directly related with the sensitivity of MEMS, if manufacture craft selects the improper effect not only not having protection MEMS, damage MEMS on the contrary, and the protective layer 140 that may be formed not easily is removed, exist residual in removing again, or the one-tenth removed causes MEMS to damage, these all can impact effect, therefore in the present embodiment inventor through careful experimental study, obtain above-mentioned process, the protective layer 140 formed easily is removed, and MEMS can not cause damage, effectively protect the MEMS in BGA manufacturing process, the sensor accuracy that this MEMS is formed improves greatly, and reduce cost.
In the present embodiment, protective layer 140 forms metal interconnecting layer 150.Concrete formation method is the method for chemical vapor deposition or physical vapor deposition, forms metal nickel dam, layer of titanium metal or NiTi mixed layer.
In another embodiment, also can not form metal interconnecting layer, require the position of weld pad and the position phase one_to_one corresponding of BGA soldered ball like this, the BGA package method of the such as mode of chemistry does not just form metal interconnecting layer.
Continue with reference to figure 3, above described protective layer 140, form sacrifice layer 160, described sacrifice layer 160 exposes the position of described weld pad 130.In the present embodiment, owing to being formed with metal interconnecting layer 150 on protective layer 140, therefore sacrifice layer 160 covers on metal interconnecting layer 150.Described sacrifice layer 160 covers the position of corresponding described protective layer 140 on metal interconnecting layer 150.This sacrifice layer 160 is for forming soldered ball after follow-up removal.
Sacrificial layer material can be carbon, germanium or polyamide (polyamide).Concrete can be amorphous carbon (AmorphousCarbon), plasma enhanced chemical vapor deposition (PECVD) technique is utilized to be formed, it is 350 DEG C ~ 450 DEG C in temperature, air pressure: 1torr ~ 20torr, RF power: 800W ~ 1500W, reacting gas comprises: C3H6 and HE, and reaction gas flow is 1000sccm ~ 3000sccm, wherein C3H6:HE2:1 ~ 5:1.
In the present embodiment, described sacrifice layer 160 exposes the metal interconnecting layer 150 of described weld pad 130 periphery, and the opening being convenient to sacrifice layer 160 like this exposes weld pad 130 more fully.
In another embodiment, can not form metal interconnecting layer 150 on protective layer 140, therefore described sacrifice layer 160 is just formed directly on protective layer 140.
Continue with reference to figure 3, above described weld pad 130, form the first metal layer 170.
In the present embodiment, owing to being formed with metal interconnecting layer 150 on weld pad 130, therefore the first metal layer 170 is formed on metal interconnecting layer 150, corresponding to the position above weld pad 130.Concrete, formation method is: the method for chemical vapour deposition or physical vapor deposition, utilizes mask to block figure, forms metal lead layer, metal zinc layers or plumbous zinc mixed layer.
Described the first metal layer 170 cover described sacrifice layer 160 expose metal interconnecting layer 150, formed with metal interconnecting layer 150 between metal interconnected.For the formation of weld pad 130/ metal interconnecting layer 150 and afterwards, the congruent melting between the soldered ball of formation, what soldered ball and chip were combined is more firm for described the first metal layer 170.
In another embodiment, the method for chemistry can be utilized to form the first metal layer, specifically with reference to the chemical method of traditional fabrication BGA, can repeat no more.
Continue with reference to figure 3, the first metal layer 170 and described sacrifice layer 160 are formed the second metal level 180.
In the present embodiment, the second metal level 180 is the final metal level forming welded ball array, and concrete formation method is: the method for chemical vapor deposition or physical vapor deposition, utilizes mask pattern, forms the plumbous mixed layer of metal tin layers, metal lead layer or tin.Also can etch after formation second metal level, obtain covering the second metal level 180 of above weld pad and periphery.
The method of chemistry can be utilized in another embodiment to form the second metal level, specifically with reference to the chemical method of traditional fabrication BGA, can repeat no more.
With reference to figure 4: etch described second metal level 180, retain the second metal level 180 covering the first metal layer 170 and periphery thereof.
In the present embodiment, concrete three steps that can also be divided into etch:
First step etching sacrificial layer 160, method can, with oxygen plasma ashing removal (Asher), adopt heating-up temperature to be 100 DEG C ~ 350 DEG C.
Second step etching metal interconnecting layer 150, method is: the method for plasma etching.
In the step of etching metal interconnecting layer 150; first can do mask layer; metal interconnecting layer 150 above protection weld pad 130; because in the present embodiment BGA soldered ball above weld pad and weld pad be one to one; do not need the metal interconnected connection weld pad of extra formation and soldered ball, therefore etching metal interconnecting layer 150 all can remove the metal interconnecting layer beyond above weld pad.Certainly also can not form metal interconnecting layer in other embodiments, forming metal interconnecting layer benefit is in the present embodiment and existing BGA process compatible.
3rd step etch-protecting layer 140, method is: soak with organic chemistry medicament and remove, the medicament ST-44 etc. that such as ATMI manufacturer provides, and also can, with oxygen plasma ashing removal (Asher), adopt heating-up temperature to be 100 DEG C ~ 350 DEG C.
Last reference diagram 5, etches the 3rd metal level 180, such as, heat and make the metal of the 3rd metal level be that molten state flows backwards, thus form the ball-type soldered ball covering remaining the first metal layer and metal interconnecting layer.
In other embodiments, also can not to sacrifice layer, the first metal layer, protective layer, the second metal level successively etches, but directly etches in same step, and the sacrifice layer protective layer retained below the second metal level is not removed.
In addition present invention also offers the pressure sensor that above-mentioned method for packing obtains, with reference to figure 5, comprising: cmos circuit layer 110; Be positioned at the MEMS layer 120 on described cmos circuit layer 110; Be positioned at the weld pad 130 on described MEMS layer 120; Described weld pad 130 has the first metal layer 170; Described the first metal layer 170 has soldered ball 180.Optionally, between described weld pad 130 and described the first metal layer 170, metal interconnecting layer 150 is had.
In the present invention in the step of etching sacrificial layer and metal interconnecting layer; the thin location of groove 128 correspondence of inductive means 121 is protected due to matcoveredn 140; make exposed MEMS top injury-free; namely inductive means 121 is injury-free, improves the reliability of device greatly, makes pressure sensor chip to utilize BGA package; thus reduce package dimension; make the volume-diminished of device, cost is lower, and product is optimized.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (7)
1. a method for packing for pressure sensor chip, its feature in, comprise step:
There is provided a pressure sensor chip, it comprises cmos circuit layer and is positioned at the MEMS layer above cmos circuit layer, has weld pad on MEMS layer surface;
Described MEMS layer forms protective layer, and described protective layer exposes described weld pad;
Above described protective layer, form sacrifice layer, described sacrifice layer exposes the position of described weld pad;
The first metal layer is formed above described weld pad;
The first metal layer and described sacrifice layer form the second metal level;
Etch described second metal level, form the soldered ball be positioned on the first metal layer;
Also comprise before described protective layer is formed sacrifice layer step: on described protective layer and weld pad, form metal interconnecting layer;
Described sacrifice layer is positioned at the position of corresponding described protective layer on metal interconnecting layer;
Described the first metal layer is positioned at the position of corresponding described weld pad on described interconnecting metal layer.
2. method for packing as claimed in claim 1, it is characterized in that, the material of described protective layer is polyamide or photoresist.
3. method for packing as claimed in claim 2, it is characterized in that, described protective layer formation method is: first polyamide or photoresist are carried out spin coating; Then first time baking at 120-160 DEG C; Then at 250-400 DEG C, second time baking.
4. method for packing as claimed in claim 1, it is characterized in that, described sacrifice layer exposes the metal interconnecting layer of described weld pad periphery, and described the first metal layer covers the metal interconnecting layer that described sacrifice layer exposes.
5. method for packing as claimed in claim 1, is characterized in that, also comprises in formation second metal level step and etching between described second metal level step:
First step etching removes sacrifice layer;
Second step etching removes the metal interconnecting layer that the sacrifice layer before being removed is covered;
3rd step etching removes protective layer.
6. method for packing as claimed in claim 5, be characterised in that, the method removing described protective layer is: organic chemistry medicament soaks to be removed or uses oxygen plasma ashing removal.
7. the pressure sensor that obtains of the method for packing of claim 1, its feature in, comprising:
Cmos circuit layer;
Be positioned at the MEMS layer on described cmos circuit layer;
Be positioned at the weld pad on described MEMS layer;
Described weld pad has the first metal layer;
Described the first metal layer has soldered ball.
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| CN105371878B (en) * | 2015-12-04 | 2017-08-25 | 歌尔股份有限公司 | A kind of environmental sensor and its manufacture method |
| CN112284608B (en) * | 2020-09-15 | 2022-08-02 | 南京高华科技股份有限公司 | Capacitive micro-mechanical air pressure sensor and preparation method thereof |
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| TWI396242B (en) * | 2009-08-11 | 2013-05-11 | Pixart Imaging Inc | Microelectronic device, method for fabricating microelectronic device, and mems package and method for fabricating the same |
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Effective date of registration: 20230609 Address after: 323000 room 307, block B, building 1, No.268 Shiniu Road, nanmingshan street, Liandu District, Lishui City, Zhejiang Province Patentee after: Zhejiang Core Microelectronics Co.,Ltd. Address before: Room 501B, Building 5, 3000 Longdong Avenue, Zhangjiang High-tech Park, Pudong New Area, Shanghai, 201203 Patentee before: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. |