CN105565252B - A kind of MEMS and preparation method thereof, electronic installation - Google Patents
A kind of MEMS and preparation method thereof, electronic installation Download PDFInfo
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- CN105565252B CN105565252B CN201410531473.4A CN201410531473A CN105565252B CN 105565252 B CN105565252 B CN 105565252B CN 201410531473 A CN201410531473 A CN 201410531473A CN 105565252 B CN105565252 B CN 105565252B
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Abstract
The present invention relates to a kind of MEMS and preparation method thereof, electronic installation.Methods described includes：Step S1：MEMS wafer, the first mask layer formed with patterning in the MEMS wafer are provided；Step S2：Using first mask layer as MEMS wafer described in mask etch, to form some raised designs；Step S3：Retain remaining first mask layer on the raised design, and form the second mask layer of patterning, to cover first mask layer and the raised design；Step S4：Using second mask layer as MEMS wafer described in mask etch, to obtain target pattern.The advantage of the invention is that：1st, the phenomenon of MEMS damage is reduced, improves yield of devices (Yield).2nd, the yield rate of factory is improved.Reduce production cost.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to which a kind of MEMS and preparation method thereof, electronics fill
Put.
Background technology
Increasingly increase for the semiconductor storage demand of high power capacity, the integration density of these semiconductor storages
It is concerned by people, in order to increase the integration density of semiconductor storage, employs many different sides in the prior art
Method, such as multiple memory cell are formed on single wafer by reducing wafer size and/or changing inner structure unit, for
For the method for increasing integration density by changing cellular construction, carry out attempting horizontal layout of the ditch by changing active area
Or change cell layout and carry out reduction unit area.
In consumer electronics field, multifunctional equipment is increasingly liked by consumer, compared to the simple equipment of function,
Multifunctional equipment manufacturing process will be more complicated, than the chip if desired for integrated multiple difference in functionalitys in circuit version, thus go out
3D integrated circuits (integrated circuit, IC) technology is showed.
Wherein, microelectromechanical systems (MEMS) has in volume, power consumption, weight and in price fairly obvious excellent
Gesture, has developed a variety of different sensors so far, for example, pressure sensor, acceleration transducer, inertial sensor and
Other sensors.
The etching of depth is often used in the preparation process of MEMS, on MEMS wafer (Wafer) surface
In the case of it pattern topology be present, if being continuing with photoetching process, (the drift angle of raised design can be made at MEMS shoulder
Place, sharp corner) photoresist thickness reduce, expose at the MEMS shoulder, will result in the damage and mistake of MEMS
Effect.
Therefore need to be improved further the preparation method of the current MEMS, to eliminate above mentioned problem.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will enter in specific embodiment part
One step describes in detail.The Summary of the present invention is not meant to attempt to limit technical scheme claimed
Key feature and essential features, the protection domain for attempting to determine technical scheme claimed is not meant that more.
The present invention is in order to overcome the problem of presently, there are, there is provided a kind of preparation method of MEMS, including：
Step S1：MEMS wafer, the first mask layer formed with patterning in the MEMS wafer are provided；
Step S2：Using first mask layer as MEMS wafer described in mask etch, to form some raised designs；
Step S3：Retain remaining first mask layer on the raised design, and form the second mask of patterning
Layer, to cover first mask layer and the raised design；
Step S4：Using second mask layer as MEMS wafer described in mask etch, to obtain target pattern.
Alternatively, first mask layer and second mask layer select identical material.
Alternatively, first mask layer and second mask layer select photoresist.
Alternatively, first mask layer is formed by the method for rotary coating in the step S1.
Alternatively, second mask layer is formed by the method for spraying in the step S3.
Alternatively, in the step S2, the cross section of the raised design is square.
Alternatively, it is described convex to expose formed with opening in the second mask layer of the patterning in the step S3
Play the MEMS wafer between pattern.
Alternatively, in the step S4, using second mask layer as MEMS wafer described in mask etch, with described
Groove is formed in the MEMS wafer between raised design.
Present invention also offers a kind of MEMS being prepared based on the above method.
Present invention also offers a kind of electronic installation, including above-mentioned MEMS.
The present invention is in order to solve problems of the prior art, there is provided a kind of preparation method of MEMS, in institute
State in method using the first mask layer as mask etch formed raised design after, retain described first in subsequent steps and cover
Film layer, the second mask layer being deposited on the basis of the first mask layer, second mask layer is entirely capable of covering the raised design,
Due to the presence of the first mask layer, after depositing the second mask layer, the mask thickness at drift angle (shoulder) place of the raised design
Spend larger, the weak positions of PR are brought up on the wedge angle of upper first mask layer, can be ensured in follow-up etching process not
The drift angle of the raised design can be exposed, any infringement will not be caused to the drift angle, will not more disappear angle problem.
The advantage of the invention is that：
1st, the phenomenon of MEMS damage is reduced, improves yield of devices (Yield).
2nd, the yield rate of factory is improved.Reduce production cost.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, for explaining the device of the present invention and principle.In the accompanying drawings,
Fig. 1 a-1e are the preparation process schematic diagram of MEMS in the prior art；
Fig. 2 a-2d are the preparation process schematic diagram of MEMS described in the embodiment of the invention；
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention.
Embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention can be able to without one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, do not enter for some technical characteristics well known in the art
Row description.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to what is proposed here
Embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in Ceng He areas may be exaggerated.From beginning to end
Same reference numerals represent identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, its can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
Person may have element or layer between two parties.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or when " being directly coupled to " other elements or layer, then element or layer between two parties is not present.It should be understood that although it can make
Various elements, part, area, floor and/or part are described with term first, second, third, etc., these elements, part, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish an element, part, area, floor or part with it is another
One element, part, area, floor or part.Therefore, do not depart from present invention teach that under, the first element discussed below, portion
Part, area, floor or part are represented by the second element, part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and by using so as to describe an element shown in figure or feature with
The relation of other elements or feature.It should be understood that in addition to the orientation shown in figure, spatial relationship term is intended to also include making
With the different orientation with the device in operation.For example, if the device upset in accompanying drawing, then, is described as " under other elements
Face " or " under it " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when in this specification in use, determining the feature, whole
Number, step, operation, the presence of element and/or part, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, part and/or group.Herein in use, term "and/or" includes any and institute of related Listed Items
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Explain technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, this
Invention can also have other embodiment.
At present, the preparation method of the MEMS as is shown in figs. la to ld, provides MEMS wafer 101, described first
Mask layer 102, such as photoresist layer are formed in MEMS wafer 101, then with the mask layer 102 for MEMS described in mask etch
Wafer 101, to form spaced column pattern, as shown in Figure 1 b, the mask layer 102 is then removed, as illustrated in figure 1 c,
Then the column diagram is exposed formed with opening in the photoresist layer 103 of deposit patterned, the photoresist layer of the patterning
Region between case, it is MEMS wafer described in mask etch 101 to form groove using the photoresist layer as shown in Figure 1 d, but
It is that drift angle (shoulder) place of column pattern described in the device being prepared by the method for the invention is damaged, such as Fig. 1 e
Shown, the drift angle is etched removal, and so as to cause " disappear angle " problem, the performance and yield that make device reduce.
In order to solve the problem, inventor has carried out analysis and substantial amounts of experiment to methods described, found described in deposition
The very thin thickness of the photoresist layer deposited during photoresist layer 103 at drift angle (shoulder) place of the column pattern, therefore follow-up
Etch process in be easy to the drift angle (shoulder) that exposes the column pattern, so as to cause to damage to the drift angle, make device
Performance and yield reduce.
Embodiment 1
In order to solve problems of the prior art, the invention provides a kind of preparation method of MEMS, below
Methods described is described further with reference to accompanying drawing 2a-2d.
First, perform step 201, there is provided MEMS wafer 201, in the MEMS wafer 201 formed with patterning first
Mask layer 202.
Specifically, as shown in Figure 2 a, wherein the MEMS wafer 201 can select silicon, polysilicon or SiGe etc. partly to lead
Body material, it is not limited to a certain.
Wherein the MEMS can be sensor in the present invention, such as pressure sensor, acceleration transducer etc.,
Or MEMS microphone, or other species MEMSs, it is not limited to it is a certain.
Wherein, the first mask layer 202 is formed in the MEMS wafer, wherein, first mask layer 202 can be selected
Photoresist layer, its thickness are not limited to a certain number range, can be configured as needed.
Further, first mask layer 202 is formed by the method for rotary coating, but methods described is only example
Property.
Then development is exposed to the photoresist layer, to form pattern as shown in Figure 2 a, institute after exposure imaging
The cross section for stating photoresist layer is square structure, and the photoresist forms cylindricality or bar paten, it is not limited to a certain.
Some spaced patterns are formed in wherein described first mask layer 202.
Step 202 is performed, using first mask layer as MEMS wafer 201 described in mask etch, to form some projections
Pattern.
Specifically, as shown in Figure 2 a, the cross section of the raised design is square structure in this step.Such as rectangle
Or square.
Alternatively, the raised design is cylindrical or bar paten, it is not limited to a certain.
Dry etching or wet etching can be selected in this step, in one embodiment, can select N2In
As etching atmosphere, other a small amount of gas such as CF can also be added simultaneously4、CO2、O2, the etching pressure can be 50-
200mTorr, 100-150mTorr, power 200-600W are chosen as, the etching period is 5-80s in the present invention, optional
For 10-60s, while larger gas flow is selected in the present invention, in N of the present invention2Flow be 30-300sccm, can
Elect 50-100sccm as.
Step 203 is performed, retains remaining first mask layer in the step 202, and form the second of patterning
Mask layer 203, to cover first mask layer and the raised design.
Specifically, as shown in Figure 2 b, covered in this step in the side wall of the raised design and described the first of top
Second mask layer is formed in film layer, the MEMS wafer of the raised design both sides.
Alternatively, first mask layer and second mask layer select identical material, such as first mask
Layer and second mask layer select photoresist.
Further, second mask layer is formed by the method for spraying in this step.
Wherein, second mask layer 203 is patterned, to form opening, to expose the MEMS between the raised design
Wafer.
In this step because the first mask layer for forming the raised design does not remove, on the first mask layer
Continue to deposit the second mask layer, as shown in Figure 2 c, second mask layer is entirely capable of covering the raised design, covers due to first
The presence of film layer, after depositing the second mask layer, the weak positions of PR are brought up on the wedge angle of the first mask layer, the projection
The mask layer thickness at drift angle (shoulder or wedge angle) place of pattern is larger, can ensure expose in follow-up etching process
The drift angle of the raised design, any infringement will not be caused to the drift angle, will not more disappear angle problem.
Step 204 is performed, using second mask layer as MEMS wafer described in mask etch, to obtain target pattern.
Specifically, as shown in Figure 2 d, in this step using second mask layer as MEMS wafer described in mask etch, with
Groove is formed in the MEMS wafer between the raised design.
Certainly, it is necessary to which explanation is that the target pattern is not necessarily and forms groove between the raised design, may be used also
To be other patterns.
The engraving method can select dry etching or wet etching commonly used in the art in this step, herein not
Repeat again.
So far, the introduction of the correlation step of the MEMS preparation of the embodiment of the present invention is completed.After the above step,
Other correlation steps can also be included, here is omitted.Also, in addition to the foregoing steps, the preparation method of the present embodiment
Other steps can also be included among above-mentioned each step or between different steps, these steps can pass through existing skill
Various techniques in art realize that here is omitted.
The present invention is in order to solve problems of the prior art, there is provided a kind of preparation method of MEMS, in institute
State in method using the first mask layer as mask etch formed raised design after, retain described first in subsequent steps and cover
Film layer, the second mask layer being deposited on the basis of the first mask layer, second mask layer is entirely capable of covering the raised design,
Due to the presence of the first mask layer, after depositing the second mask layer, the mask thickness at drift angle (shoulder) place of the raised design
Spend larger, can ensure that the drift angle of the raised design will not be exposed in follow-up etching process, the drift angle will not be made
Into any infringement, will not more disappear angle problem.
The advantage of the invention is that：
1st, the phenomenon of MEMS damage is reduced, improves yield of devices (Yield).
2nd, the yield rate of factory is improved.Reduce production cost.
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention, is specifically included following
Step：
Step S1：MEMS wafer, the first mask layer formed with patterning in the MEMS wafer are provided；
Step S2：Using first mask layer as MEMS wafer described in mask etch, to form some raised designs；
Step S3：Retain remaining first mask layer on the raised design, and form the second mask of patterning
Layer, to cover first mask layer and the raised design；
Step S4：Using second mask layer as MEMS wafer described in mask etch, to obtain target pattern.
Embodiment 2
Present invention also offers a kind of MEMS, the MEMS is prepared by the methods described of embodiment 1,
Pattern in the MEMS, such as the drift angle of raised design are not damaged, and have complete pattern, further improve
The performance and yield of MEMS.
Embodiment 3
Present invention also offers a kind of electronic installation, including the MEMS described in embodiment 2.Wherein, semiconductor devices
For the MEMS described in embodiment 2, or the MEMS that preparation method according to embodiment 1 obtains.
The electronic installation of the present embodiment, can be mobile phone, tablet personal computer, notebook computer, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment, or
Any intermediate products for including the MEMS.The electronic installation of the embodiment of the present invention, due to having used above-mentioned MEMS devices
Part, thus there is better performance.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in described scope of embodiments.In addition people in the art
Member can also make more kinds of it is understood that the invention is not limited in above-described embodiment according to the teachings of the present invention
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (10)
1. a kind of preparation method of MEMS, including：
Step S1：MEMS wafer, the first mask layer formed with patterning in the MEMS wafer are provided；
Step S2：Using first mask layer as MEMS wafer described in mask etch, to form some raised designs；
Step S3：Retain remaining first mask layer on the raised design, and form the second mask layer of patterning, with
Cover first mask layer and the raised design；
Step S4：Using second mask layer as MEMS wafer described in mask etch, to obtain target pattern, wherein described first
Mask layer and second mask layer are used to ensure that the drift angle of the raised design will not be exposed in the etching process.
2. according to the method for claim 1, it is characterised in that first mask layer and second mask layer select phase
Same material.
3. according to the method for claim 1, it is characterised in that first mask layer and second mask layer select light
Photoresist.
4. the method according to claim 1 or 3, it is characterised in that pass through the method for rotary coating in the step S1
Form first mask layer.
5. the method according to claim 1 or 3, it is characterised in that formed in the step S3 by the method for spraying
Second mask layer.
6. according to the method for claim 1, it is characterised in that in the step S2, the cross section of the raised design
To be square.
7. according to the method for claim 1, it is characterised in that in the step S3, the second mask of the patterning
Formed with opening in layer, to expose the MEMS wafer between the raised design.
8. according to the method for claim 7, it is characterised in that in the step S4, using second mask layer to cover
Film etches the MEMS wafer, to form groove in the MEMS wafer between the raised design.
A kind of 9. MEMS being prepared based on one of claim 1 to 8 methods described.
10. a kind of electronic installation, including the MEMS described in claim 9.
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| CN101421830A (en) * | 2006-02-17 | 2009-04-29 | 朗姆研究公司 | Infinitely selective photoresist mask etch |
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