CN105480938B - A kind of MEMS and preparation method thereof, electronic installation - Google Patents
A kind of MEMS and preparation method thereof, electronic installation Download PDFInfo
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- CN105480938B CN105480938B CN201410531380.1A CN201410531380A CN105480938B CN 105480938 B CN105480938 B CN 105480938B CN 201410531380 A CN201410531380 A CN 201410531380A CN 105480938 B CN105480938 B CN 105480938B
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Abstract
The present invention relates to a kind of MEMS and preparation method thereof, electronic installation.Methods described includes：Step S1：MEMS wafer is provided, formed with some spaced functional areas with drift angle in the MEMS wafer；Step S2：The mask layer of patterning is formed in the MEMS wafer, to cover the region around the functional areas and the functional areas vertex；Step S3：The space in the mask layer is filled from adhesive glue, for engagement.The advantage of the invention is that：1st, by graphic designs, MEMS pixel area is prevented to be damaged (Damage).2nd, the yield (Yield) of product is improved.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to which a kind of MEMS and preparation method thereof, electronics fill
Put.
Background technology
Increasingly increase for the semiconductor storage demand of high power capacity, the integration density of these semiconductor storages
It is concerned by people, in order to increase the integration density of semiconductor storage, employs many different sides in the prior art
Method, such as multiple memory cell are formed on single wafer by reducing wafer size and/or changing inner structure unit, for
For the method for increasing integration density by changing cellular construction, carry out attempting horizontal layout of the ditch by changing active area
Or change cell layout and carry out reduction unit area.
In consumer electronics field, multifunctional equipment is increasingly liked by consumer, compared to the simple equipment of function,
Multifunctional equipment manufacturing process will be more complicated, than the chip if desired for integrated multiple difference in functionalitys in circuit version, thus go out
3D integrated circuits (integrated circuit, IC) technology is showed.
Wherein, microelectromechanical systems (MEMS) has in volume, power consumption, weight and in price fairly obvious excellent
Gesture, has developed a variety of different sensors so far, for example, pressure sensor, acceleration transducer, inertial sensor and
Other sensors.
In MEMS fields, have in some image sensors, there is the concept of pixel region.Pixel region is to particulate
(Particle) and spot is especially sensitive, in order to ensure the product quality of pixel region, it is necessary to prevents staining for spot.
Photoresist PR would generally be used in image sensor preparation process at present to engage MEMS wafer and top wafer,
In engaging process after extruding of the PR by bonding (Bonding), it can deform, part PR can fall on pixel region, have impact on
The performance of MEMS product.
Therefore need to be improved further the preparation method of the current MEMS, to eliminate above mentioned problem.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will enter in specific embodiment part
One step describes in detail.The Summary of the present invention is not meant to attempt to limit technical scheme claimed
Key feature and essential features, the protection domain for attempting to determine technical scheme claimed is not meant that more.
The present invention is in order to overcome the problem of presently, there are, there is provided a kind of preparation method of MEMS, including：
Step S1：MEMS wafer is provided, formed with some spaced work(with drift angle in the MEMS wafer
Can area；
Step S2：The mask layer of patterning is formed in the MEMS wafer, to cover the functional areas and the function
Region around area's vertex；
Step S3：The space in the mask layer is filled from adhesive glue, for engagement.
Alternatively, methods described still further comprises：
Step S4：The mask layer is removed, to expose the adhesive glue；
Step S5：Top wafer is provided, to be combined into one by the adhesive glue and the MEMS wafer.
Alternatively, in the step S1, the MEMS is image sensor, and the functional areas are pixel region.
Alternatively, in the step S1, the functional areas are in the square structure with drift angle.
Alternatively, in the step S2, the mask layer includes covering the square region of the functional areas and covering institute
State the border circular areas in the region around vertex.
Alternatively, in the step S3, the adhesive glue selects photoresist.
Alternatively, in the step S5, the top wafer selects silicon.
Alternatively, in the step S5, the top wafer is extruded, so that the top wafer and the MEMS wafer
It is combined into one, the region that the adhesive glue enters around the functional areas vertex.
Present invention also offers a kind of MEMS being prepared based on the above method.
Present invention also offers a kind of electronic installation, including above-mentioned MEMS.
The present invention is in order to solve problems of the prior art, there is provided a kind of preparation method of MEMS, in institute
State in method and formed in the MEMS wafer after pixel region, form improved mask layer, the improved mask layer is not only
The pixel region, which can be covered, can also cover region around the pixel region vertex, to form pixel region protection zone, so
After fill adhesive glue, remove the mask layer, finally perform engaging process, although the adhesive glue can occur in engaging process
Deformation, or fragmentation, but because the angle position of the pixel region is formed with the protection zone not covered by the adhesive glue,
Therefore the adhesive glue after deforming can enter the protection zone, without polluting the pixel region, improve the MEMS
Performance and yield.
The advantage of the invention is that：
1st, by graphic designs, MEMS pixel area is prevented to be damaged (Damage).
2nd, the yield (Yield) of product is improved.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, for explaining the device of the present invention and principle.In the accompanying drawings,
Fig. 1 a are the SEM schematic diagrames of MEMS structure after engaging in the prior art；
Fig. 1 b are the formwork structure schematic diagram of photoresist filling in the prior art
Fig. 2 is the formwork structure schematic diagram that photoresist is filled in one embodiment of the invention
The preparation process schematic diagram of MEMS described in Fig. 3 a-3e embodiment of the invention；
Fig. 4 is the preparation technology flow chart of MEMS described in the embodiment of the invention.
Embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention can be able to without one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, do not enter for some technical characteristics well known in the art
Row description.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to what is proposed here
Embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in Ceng He areas may be exaggerated.From beginning to end
Same reference numerals represent identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, its can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
Person may have element or layer between two parties.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or when " being directly coupled to " other elements or layer, then element or layer between two parties is not present.It should be understood that although it can make
Various elements, part, area, floor and/or part are described with term first, second, third, etc., these elements, part, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish an element, part, area, floor or part with it is another
One element, part, area, floor or part.Therefore, do not depart from present invention teach that under, the first element discussed below, portion
Part, area, floor or part are represented by the second element, part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and by using so as to describe an element shown in figure or feature with
The relation of other elements or feature.It should be understood that in addition to the orientation shown in figure, spatial relationship term is intended to also include making
With the different orientation with the device in operation.For example, if the device upset in accompanying drawing, then, is described as " under other elements
Face " or " under it " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when in this specification in use, determining the feature, whole
Number, step, operation, the presence of element and/or part, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, part and/or group.Herein in use, term "and/or" includes any and institute of related Listed Items
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Explain technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, this
Invention can also have other embodiment.
At present, the preparation method of the MEMS includes, and provides MEMS wafer, and the shape in the MEMS wafer first
Into some spaced pixel regions, mask layer then is formed in the MEMS wafer, wherein the mask layer is completely covered
The pixel region, expose interval, gap between the pixel region, then using the mask layer as mask deposition photoresist layer,
Interval, gap between filler pixels area, as shown in Figure 1 b, the mask layer is finally removed, then top wafer is provided, will
The top wafer and the MEMS wafer engage, and in engaging process, the photoresist can deform, and part photoresist can fall
To pixel region, such as arrow meaning region in Fig. 1 a, the performance of MEMS product have impact on.
Therefore, there is the concept of pixel region in existing image sensor, pixel region is to particulate (Particle) and dirt
Stain is especially sensitive, in order to ensure the product quality of pixel region, it is necessary to prevents staining for spot.So need partly to lead to described at present
The preparation method of body device is improved further, to eliminate above mentioned problem.
Embodiment 1
In order to solve problems of the prior art, the invention provides a kind of preparation method of MEMS, below
Methods described is described further with reference to accompanying drawing 3a-3e.
First, step 201 is performed, there is provided MEMS wafer 301, formed with some mutual in the MEMS wafer 301
Every square structure functional areas.
Specifically, as shown in Figure 3 a, wherein the MEMS wafer 301 can select silicon, polysilicon or SiGe etc. partly to lead
Body material, it is not limited to a certain.
Wherein the MEMS can be image sensor in the present invention, function present in the image sensor
Area is pixel region, and the pixel region is especially sensitive to particulate (Particle) and spot, it is therefore desirable to ensures that it is not contaminated.
Wherein, the pixel region is is arranged at intervals, and it is shaped as square structure, such as square or rectangle etc., not
It is confined to a certain kind.
The position that pollution is most susceptible in the pixel region of the square structure is the angle position of the square structure,
Because after deposition photoresist layer is squeezed parallel between the pixel region, the vertex of the pixel region can be polluted first.
Perform step 202, the mask layer 302 of patterning formed in the MEMS wafer, with cover the functional areas and
With the protection zone to stretch out of the functional areas vertex.
Specifically, as shown in Fig. 3 a and Fig. 2, the mask layer is carried out in order to solve problems of the prior art
Improve, its structure not only includes square structure, to cover the pixel region, but also is formed in the vertex of the square structure
There is the extension area with the square structure integrally connected, the extension area is used to cover the region around the pixel region drift angle,
To form protection zone.
Wherein, the extension area can be circle, be arranged on the drift angle of the square structure.
After the mask layer 302 is deposited, the pixel region can be completely covered, can also further cover the picture
Protection zone around plain area's drift angle, to prevent from forming photoresist around the drift angle of the pixel region, the light in this application
Photoresist can be also entered in the protection zone around the pixel region even if crimp, so as to avoid the light described in engaging process
Enter the pixel region after photoresist crimp, prevent staining for spot.
Step 203 is performed, the space in the mask layer 302 is filled from adhesive glue 303, for engagement.
Specifically, as shown in Figure 3 b, in this step, adhesive glue 303 is filled in the space of the mask layer 302, is filled out
Photoresist after filling is as shown in Fig. 2 the adhesive glue 303 can select engagement glue commonly used in the art, such as can select light
Photoresist etc., it is not limited to a certain.
In this application because the mask layer has the protection zone to extend out, therefore in the vertex of the pixel region
The photoresist will not be formed.
Step 204 is performed, the mask layer is removed, to expose the adhesive glue.
Specifically, as shown in Figure 3 c, removing the method for the mask layer in this step can select and MEMS crystalline substances
The method that round and described photoresist has larger etching selectivity, dry etching or wet etching can be selected, not office
It is limited to a certain kind.
In one embodiment, N can be selected2In conduct etching atmosphere, other a small amount of gases can also be added simultaneously
Such as CF4、CO2、O2, the etching pressure can be 50-200mTorr, be chosen as 100-150mTorr, power 200-
600W, the etching period is 5-80s in the present invention, is chosen as 10-60s, while select larger gas in the present invention
Flow, in N of the present invention2Flow be 30-300sccm, be chosen as 50-100sccm.
After removing the mask layer, the pixel region, the protection zone of pixel region vertex and adhesive glue can be exposed,
For follow-up engagement.
Perform step 205, there is provided top wafer 304, to be combined into one by the adhesive glue and the MEMS wafer.
Specifically, as described in Fig. 3 d-3e, top wafer 304 is provided first, the top wafer 304 selects silicon, described
The top wafer is formed in adhesive glue, then extrudes the glue line, so that the top wafer and the MEMS wafer
It is combined into one, the adhesive glue enters the protection zone, without into pixel region.
In this step, the joint method is bonding.
So far, the introduction of the correlation step of the MEMS preparation of the embodiment of the present invention is completed.After the above step,
Other correlation steps can also be included, here is omitted.Also, in addition to the foregoing steps, the preparation method of the present embodiment
Other steps can also be included among above-mentioned each step or between different steps, these steps can pass through existing skill
Various techniques in art realize that here is omitted.
The present invention is in order to solve problems of the prior art, there is provided a kind of preparation method of MEMS, in institute
State in method and formed in the MEMS wafer after pixel region, form improved mask layer, the improved mask layer is not only
The pixel region, which can be covered, can also cover the top corner regions of the pixel region, to form pixel region protection zone, be subsequently filled
Adhesive glue, the mask layer is removed, finally performs engaging process, although the adhesive glue can deform in engaging process,
Or fragmentation, but because the angle position of the pixel region is formed with the protection zone not covered by the adhesive glue, therefore
Adhesive glue after deformation can enter the protection zone, without polluting the pixel region, improve the performance of the MEMS
And yield.
The advantage of the invention is that：
1st, by graphic designs, MEMS pixel area is prevented to be damaged (Damage).
2nd, the Yield of product is improved.
Fig. 4 is the preparation technology flow chart of MEMS described in the embodiment of the invention, is specifically included following
Step：
Step S1：MEMS wafer is provided, formed with some spaced work(with drift angle in the MEMS wafer
Can area；
Step S2：The mask layer of patterning is formed in the MEMS wafer, to cover the functional areas and the function
Region around area's vertex；
Step S3：The space in the mask layer is filled from adhesive glue, for engagement.
Embodiment 2
Present invention also offers a kind of MEMS, the MEMS is prepared by the methods described of embodiment 1,
Although the adhesive glue can deform in engaging process in the MEMS, or fragmentation, due to the pixel
Protection zone of the angle position in area formed with the white space not covered by the adhesive glue, therefore the adhesive glue meeting after deformation
Into the protection zone, without polluting the pixel region, the performance and yield of the MEMS are improved.
Embodiment 3
Present invention also offers a kind of electronic installation, including the MEMS described in embodiment 2.Wherein, semiconductor devices
For the MEMS described in embodiment 2, or the MEMS that preparation method according to embodiment 1 obtains.
The electronic installation of the present embodiment, can be mobile phone, tablet personal computer, notebook computer, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment, or
Any intermediate products for including the MEMS.The electronic installation of the embodiment of the present invention, due to having used above-mentioned MEMS devices
Part, thus there is better performance.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in described scope of embodiments.In addition people in the art
Member can also make more kinds of it is understood that the invention is not limited in above-described embodiment according to the teachings of the present invention
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (10)
1. a kind of preparation method of MEMS, including：
Step S1：MEMS wafer is provided, formed with some spaced functional areas with drift angle in the MEMS wafer；
Step S2：The mask layer of patterning is formed in the MEMS wafer, is pushed up with covering the functional areas and the functional areas
Region around at angle, to form protection zone；
Step S3：The space in the mask layer is filled from adhesive glue, for engagement.
2. according to the method for claim 1, it is characterised in that methods described still further comprises：
Step S4：The mask layer is removed, to expose the adhesive glue；
Step S5：Top wafer is provided, to be combined into one by the adhesive glue and the MEMS wafer.
3. according to the method for claim 1, it is characterised in that in the step S1, the MEMS passes for figure
Sensor, the functional areas are pixel region.
4. according to the method for claim 1, it is characterised in that in the step S1, the functional areas are in have drift angle
Square structure.
5. according to the method for claim 1, it is characterised in that in the step S2, the mask layer includes covering institute
State the border circular areas in the region around the square region and the covering vertex of functional areas.
6. according to the method for claim 1, it is characterised in that in the step S3, the adhesive glue selects photoresist.
7. according to the method for claim 2, it is characterised in that in the step S5, the top wafer selects silicon.
8. according to the method for claim 2, it is characterised in that in the step S5, the top wafer is extruded, so that
The top wafer is combined into one with the MEMS wafer, the area that the adhesive glue enters around the functional areas vertex
Domain.
A kind of 9. MEMS being prepared based on one of claim 1 to 8 methods described.
10. a kind of electronic installation, including the MEMS described in claim 9.
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| CN201410531380.1A CN105480938B (en) | 2014-10-10 | 2014-10-10 | A kind of MEMS and preparation method thereof, electronic installation |
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| CN201410531380.1A CN105480938B (en) | 2014-10-10 | 2014-10-10 | A kind of MEMS and preparation method thereof, electronic installation |
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| CN105480938A CN105480938A (en) | 2016-04-13 |
| CN105480938B true CN105480938B (en) | 2018-04-10 |
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| CN108550604B (en) * | 2018-04-27 | 2020-03-17 | 武汉华星光电半导体显示技术有限公司 | Manufacturing method of flexible backboard, flexible backboard and flexible display device |
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| CN103456749A (en) * | 2012-06-04 | 2013-12-18 | 台湾积体电路制造股份有限公司 | Image device and methods of forming the same |
| CN103472682A (en) * | 2013-09-03 | 2013-12-25 | 南昌航空大学 | Method for preparing diffraction micro-optical elements based on mask lithography technique and injection molding |
| CN103489883A (en) * | 2012-06-08 | 2014-01-01 | 台湾积体电路制造股份有限公司 | Image device and methods of forming the same |
| CN103972425A (en) * | 2013-01-31 | 2014-08-06 | 三星显示有限公司 | Sealing method for flat panel display device |
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| JPH0645468A (en) * | 1992-07-21 | 1994-02-18 | Kyocera Corp | Package for storing electronic part |
| CN103456749A (en) * | 2012-06-04 | 2013-12-18 | 台湾积体电路制造股份有限公司 | Image device and methods of forming the same |
| CN103489883A (en) * | 2012-06-08 | 2014-01-01 | 台湾积体电路制造股份有限公司 | Image device and methods of forming the same |
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