CN105590937B - A kind of back side illumination image sensor and preparation method thereof, electronic device - Google Patents
A kind of back side illumination image sensor and preparation method thereof, electronic device Download PDFInfo
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- CN105590937B CN105590937B CN201410559251.3A CN201410559251A CN105590937B CN 105590937 B CN105590937 B CN 105590937B CN 201410559251 A CN201410559251 A CN 201410559251A CN 105590937 B CN105590937 B CN 105590937B
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Abstract
The present invention relates to a kind of back side illumination image sensors and preparation method thereof, electronic device, which comprises step S1: providing device wafers, is formed with cmos device in the front of the device wafers, rewiring layer is formed on the cmos device；Step S2: the device wafers are inverted, and the front of the device wafers and slide glass wafer are temporarily bonded；Step S3: the back side of the function element of described image sensor and the device wafers is bonded；Step S4: the device wafers and the slide glass wafer solution are bonded, to expose the rewiring layer.The method of the invention can reduce oxide (oxide) in BSI CIS technical process and deposit, and CMP, the processing steps such as thermal annealing (thermal annealing) TSV have been greatly saved manufacturing cost.Simultaneously as processing step is reduced, it is also beneficial to improve product yield.
Description
Technical field
The present invention relates to semiconductor fields, in particular it relates to a kind of back side illumination image sensor and its preparation side
Method, electronic device.
Background technique
In consumer electronics field, multifunctional equipment is increasingly liked by consumer, compared to the simple equipment of function,
Multifunctional equipment manufacturing process will be more complicated, for example need to integrate the chip of multiple and different functions in circuit version, thus go out
3D integrated circuit (integrated circuit, IC) technology, 3D integrated circuit (integrated circuit, IC) quilt are showed
It is defined as a kind of system-level integrated morphology, multiple chips are stacked in vertical plane direction, to save space.
In 3D IC solid composite technology, the key technologies such as through silicon via (TSV), intermediate plate (Interposer), zero group of encapsulation
Under the assistance of part, maximum chip superposition and integration are carried out in limited areal, further reduces chip area, packaging body
It accumulates and promotes chip communication efficiency.
Back side illumination image sensor (the Backside illumination CMOS image in multi-functional electronic equipment
Sensor, BSI CIS) it is widely used, wherein usually using melting bonding in the manufacturing process of the BSI CIS device
Device wafers (device wafer) and slide glass wafer (carrier wafer) is bonded on one by (Fusion bonding) method
It rises.
Since melting bonding (Fusion bonding) is implemented in combination with bonding effect using between the Si-O-Si key of the surface wafer.
Therefore very high to the surface requirements of wafer wafer.It not only to deposit to form silicon oxide interface, it is also necessary to which CMP makes rough surface
Degree is less than 1nm.In addition, high-temperature thermal annealing process is also needed after melting bonding (Fusion bonding), to improve bonding
(bonding) binding force.
So the not only complex steps, but also cost height of the BSI manufacturing method based on melting bonding (Fusion bonding)
It is high.Meanwhile with the increase of processing step, low yield (low yield) risk is also correspondinglyd increase.
Therefore it needs to be improved further the method, it is various present in current method to solve the problems, such as.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
The present invention is in order to overcome the problems, such as that presently, there are provide a kind of preparation method of back side illumination image sensor, comprising:
Step S1: device wafers are provided, cmos device are formed in the front of the device wafers, in the cmos device
On be formed with rewiring layer；
Step S2: the device wafers are inverted, and the front of the device wafers and slide glass wafer are carried out ephemeral key
It closes；
Step S3: the back side of the function element of described image sensor and the device wafers is bonded；
Step S4: the device wafers and the slide glass wafer solution are bonded, to expose the rewiring layer.
Optionally, in the step S2, the temperature being temporarily bonded is at 200 degrees Celsius or less.
Optionally, select adhesive glue that the device wafers and the slide glass wafer are carried out ephemeral key in the step S2
It closes.
It optionally, further include that thinned step is carried out to the device wafers between the step S2 and the step S3
Suddenly.
Optionally, the reduction steps include the technique for carrying out backgrind to the device wafers.
Optionally, in the step S3, the function element of described image sensor includes colored filter and lenticule.
Optionally, in the step S3, by adhesive glue and glass by the function element of described image sensor and institute
The back side for stating device wafers is bonded.
Optionally, after the step S4, the method be may further comprise:
Step S5: salient point is formed in the one side for rerouting layer, and is packaged.
The present invention also provides a kind of back side illumination image sensors that above-mentioned method is prepared.
The present invention also provides a kind of electronic devices, including above-mentioned back side illumination image sensor.
In order to solve the problems in the existing technology the present invention, provides a kind of preparation side of back-illuminated type image sensor
Method, the method manufacture BSI CIS device using interim bonding, this method be with interim bonding (Temporary bonding,
TB) substitution melting bonding (Fusion bonding, FB) technology, since FB technological temperature reaches between 300 degree to 400 degree, together
When also need to anneal (anneal) for a long time, and the technological temperature of TB is all generally 200 degree hereinafter, reducing hot burden
(thermal budget), so that wafer distortion (wafer distortion) is reduced, for the back side of device (device)
Alignment (overlay) compensation of technique has very big benefit.Oxide in BSI CIS technical process can additionally be reduced
(oxide) it deposits, CMP, the processing steps such as thermal annealing (thermal annealing) TSV have been greatly saved manufacturing cost.Together
When, since processing step is reduced, it is also beneficial to improve product yield.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, device used to explain the present invention and principle.In the accompanying drawings,
Fig. 1 a-1g is the preparation process schematic diagram of back side illumination image sensor described in the prior art；
Fig. 2 a-2g is the preparation process schematic diagram of back side illumination image sensor described in the embodiment of the present invention；
Fig. 3 is the preparation technology flow chart of one specifically back side illumination image sensor described in embodiment of the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
The preparation method of back side illumination image sensor described in the prior art is as shown in Fig. 1 a-1g, wherein provider first
Part wafer 101 is formed with cmos device, such as various active devices etc. as shown in Figure 1a in the device wafers, then in institute
Formation silicon oxide interface 102 in device wafers is stated, to pass through the Si-O-Si of the silicon oxide interface 102 in subsequent steps
It is implemented in combination with bonding effect between key, also needs to execute the silicon oxide interface 102 after forming the silicon oxide interface 102
CMP makes surface roughness be less than 1nm, as shown in Figure 1 b.
Then slide glass wafer 103 is provided, such as and by silicon oxide interface 102 and the device wafers 101 be bonded, such as Fig. 1 c
It is shown, in order to which with biggish bonding force, the bonding temperature is higher in this step, to realize melting bonding, in addition, melting
High-temperature thermal annealing process is also needed after bonding (Fusion bonding), is bonded (bonding) binding force, the step to improve
Suddenly wafer distortion (wafer distortion) can all be caused.
Then, the device is inverted, and backgrind is carried out to the back side of the device wafers, it is brilliant to reduce the device
Round thickness, as shown in Figure 1 d.
Then, pass through adhesive glue 104 and glass 105 on the back side of the wafer device for the function of described image sensor
Energy device 106, such as the back side bonding of colored filter and lenticule and the wafer device, as shown in fig. le.
Then through silicon via 107 is formed on the slide glass wafer, as shown in Figure 1 f, to form electrical connection, finally described
It is formed in through silicon via and reroutes layer 108, as shown in Figure 1 g.
The method includes oxide (oxide) deposition, CMP, the techniques such as thermal annealing (thermal annealing) TSV
Step, not only complex steps, but also higher temperature is needed in this process, to cause the deformation of wafer, cause semiconductor
The yield of device and the reduction of performance.
Therefore it needs to be improved further the method, it is various present in current method to solve the problems, such as.
Embodiment 1
In order to solve the problems in the existing technology the present invention, provides a kind of preparation method of semiconductor devices, under
Face combines Fig. 2 a-2g to be further described the method.
Step 201 is first carried out, device wafers 201 are provided, various CMOS are formed on the front of the device wafers
Device.
Specifically, as shown in Figure 2 a, the various active devices formed in the device wafers, the active device include
But be not limited to transistor, diode etc., in addition, various interconnection structures can also be formed on the active device, the interconnection
Structure includes several metal layers and the through-hole between several metal layers, and the interconnection structure is used for and the CMOS
Device forms electrical connection.
Wherein, the preparation method of the cmos device and the interconnection structure can select various sides commonly used in the art
Method, it is not limited to it is a certain, it is no longer described in further detail herein.
Step 202 is executed, is also formed on stating cmos device and reroutes layer 202.
Specifically, as shown in Figure 2 b, wherein the material for rerouting layer 202 and forming method can select this field
Common method, details are not described herein.
The cmos device rerouted in layer 202 and the device wafers forms electrical connection, such as the rewiring layer
202 form connection by the cmos device in the interconnection structure and the device wafers.But be not limited to that the method.
In order to simplify the technical process in the present invention, the yield and performance of device are improved, the production of semiconductor devices is reduced
Cost, no longer selection TSV forms electrical connection, but selects and reroute layer, and salient point is then formed above, finally selects salient point work
Skill (bumping) realizes encapsulation, and the method is simpler, and the yield of device can be improved.
Step 203 is executed, inverts the device wafers, as shown in Figure 2 c.
Step 204 is executed, provides slide glass wafer 204, and be temporarily bonded with the front of the device wafers.
As shown in Figure 2 d, in the present invention, wherein the front of the device wafers, which refers to, is formed with cmos device and figure
The one side of case, the back side of the device wafers refer to the one side for not forming cmos device and pattern, in subsequent steps,
If not specified otherwise, the front and back of the device wafers is referring to the explanation.
Wherein the slide glass wafer 204 can select the materials such as silicon, polysilicon, it is not limited to a certain.
Then device wafers 201 and the slide glass wafer 204 are temporarily bonded by adhesive glue 203, wherein described
The temperature being temporarily bonded faces the device wafers 201 and the slide glass wafer 204 less than 200 degrees Celsius, by the method
Shi Jianhe can reduce to avoid the deformation of device wafers caused by melting bonding process high temperature and annealing process high temperature
The heat load of the semiconductor devices.
The adhesive glue 203 can select binder commonly used in the art in this step, to guarantee the device wafers
There is biggish bonding force, while the adhesive glue 203 can not be remained in removal between 201 and the slide glass wafer 204.
Pass through temporarily bonding (Temporary bonding, TB) substitution melting bonding (Fusion in the application
Bonding, FB) technology, since FB technological temperature reaches between 300 degree to 400 degree, while also needing to anneal for a long time
(anneal), and the technological temperature of TB be all generally 200 degree hereinafter, reduce heat burden (thermal budget), to subtract
Small wafer distortion (wafer distortion) compensates the alignment (overlay) of the back process of device (device)
There is very big benefit.
Step 205 is executed, thinned step is carried out to the device wafers.
Specifically, as shown in Figure 2 e, the reduction steps packet carries out backgrind to the device wafers in this step.
In this step, the grinding method can select method commonly used in the art, it is not limited to and it is a certain, herein
It repeats no more.
It is less than 5um to the distance apart from the cmos device by the grinding back surface of the device wafers in this step
Only, such as Fig. 2 e.
Step 206 is executed, the back side of the function element 207 of described image sensor and the device wafers 201 is bonded.
Specifically, as shown in figure 2f, the function element 207 of described image sensor includes colored filter in this step
And lenticule.
Pass through the second adhesive glue 205 and glass 206 in this step for the function element of imaging sensor and the device
The back side of wafer is bonded.
Wherein, the glass 206 is located above the colored filter and lenticule, wherein second adhesive glue 205
Common adhesive glue in packaging technology is selected, the glass 206 selects common glass in packaging technology.
Step 207 is executed, the device wafers and the slide glass wafer solution are bonded, to expose the rewiring layer.
Specifically, as shown in Figure 2 g, corresponding solvent is selected to dissolve second adhesive glue 205 in this step, so
Afterwards by the device wafers and the slide glass wafer separate, to realize the step of solution is bonded.
Further, it is also possible to the device wafers and the slide glass wafer solution are bonded by mechanical method, such as in device
Installation frame on part wafer and the slide glass wafer, for executing solution bonding.
After the step, the method still further comprises the step of cleaning to the device wafers.
Further, the method may further include and form salient point in the one side for rerouting layer, and be packaged.
So far, the introduction of the correlation step of the back side illumination image sensor preparation of the embodiment of the present invention is completed.Above-mentioned
It can also include other correlation steps, details are not described herein again after step.Also, in addition to the foregoing steps, the present embodiment
Preparation method can also include other steps among above-mentioned each step or between different steps, these steps can lead to
Various techniques in the prior art are crossed to realize, details are not described herein again.
In order to solve the problems in the existing technology the present invention, provides a kind of preparation side of back-illuminated type image sensor
Method, the method manufacture BSI CIS device using interim bonding, this method be with interim bonding (Temporary bonding,
TB) substitution melting bonding (Fusion bonding, FB) technology, since FB technological temperature reaches between 300 degree to 400 degree, together
When also need to anneal (anneal) for a long time, and the technological temperature of TB is all generally 200 degree hereinafter, reducing hot burden
(thermal budget), so that wafer distortion (wafer distortion) is reduced, for the back side of device (device)
Alignment (overlay) compensation of technique has very big benefit.Oxide in BSI CIS technical process can additionally be reduced
(oxide) it deposits, CMP, the processing steps such as thermal annealing (thermal annealing) TSV have been greatly saved manufacturing cost.Together
When, since processing step is reduced, it is also beneficial to improve product yield.
Fig. 3 is the preparation technology flow chart of back side illumination image sensor described in the embodiment of the invention, specifically
The following steps are included:
Step S1: device wafers are provided, cmos device are formed in the front of the device wafers, in the cmos device
On be formed with rewiring layer；
Step S2: the device wafers are inverted, and the front of the device wafers and slide glass wafer are carried out ephemeral key
It closes；
Step S3: the back side of the function element of described image sensor and the device wafers is bonded；
Step S4: the device wafers and the slide glass wafer solution are bonded, to expose the rewiring layer.
Embodiment 2
The present invention also provides a kind of back side illumination image sensor, institute's back side illumination image sensor is selected described in embodiment 1
Method preparation.The back side illumination image sensor price that 1 the method is prepared through the embodiment of the present invention is lower, and has
There are higher yield and yield.
Embodiment 3
The present invention also provides a kind of electronic devices, including back side illumination image sensor as described in example 2.Wherein, it carries on the back
Illuminated image sensor is back side illumination image sensor as described in example 2, or is obtained according to preparation method described in embodiment 1
Back side illumination image sensor.
The electronic device of the present embodiment can be mobile phone, tablet computer, laptop, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment can also be
Any intermediate products including the semiconductor devices.The electronic device of the embodiment of the present invention above-mentioned is partly led due to having used
Body device, thus there is better performance.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (10)
1. a kind of preparation method of back side illumination image sensor, comprising:
Step S1: device wafers are provided, are formed with cmos device in the front of the device wafers, the shape on the cmos device
At there is rewiring layer；
Step S2: the device wafers are inverted, and the front of the device wafers and slide glass wafer are temporarily bonded；
Step S3: by the function element of described image sensor and the device after the interim bonding in the step S2
The back side of part wafer is bonded；
Step S4: the device wafers and the slide glass wafer solution are bonded, to expose the rewiring layer.
2. the method according to claim 1, wherein the temperature being temporarily bonded exists in the step S2
200 degrees Celsius or less.
3. the method according to claim 1, wherein selecting adhesive glue that the device is brilliant in the step S2
The round and slide glass wafer is temporarily bonded.
4. the method according to claim 1, wherein further including pair between the step S2 and the step S3
The device wafers carry out thinned step.
5. according to the method described in claim 4, it is characterized in that, the reduction steps include carrying on the back to the device wafers
The technique of portion's grinding.
6. the method according to claim 1, wherein in the step S3, the function of described image sensor
Element includes colored filter and lenticule.
7. method according to claim 1 or 6, which is characterized in that in the step S3, will by adhesive glue and glass
The back side of the function element of described image sensor and the device wafers is bonded.
8. the method according to claim 1, wherein the method is also further wrapped after the step S4
It includes:
Step S5: salient point is formed in the one side for rerouting layer, and is packaged.
9. a kind of back side illumination image sensor being prepared based on method described in one of claim 1 to 8.
10. a kind of electronic device, including back side illumination image sensor as claimed in claim 9.
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| CN110335878A (en) * | 2019-06-12 | 2019-10-15 | 芯盟科技有限公司 | A kind of preparation method of imaging sensor, imaging sensor and electronic equipment |
| CN110246858A (en) * | 2019-06-21 | 2019-09-17 | 芯盟科技有限公司 | Imaging sensor and forming method thereof |
| CN111968954B (en) * | 2020-08-27 | 2022-07-01 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
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| CN103066088A (en) * | 2012-12-21 | 2013-04-24 | 豪威科技(上海)有限公司 | Manufacturing method of backside illuminated complementary metal-oxide-semiconductor transistor (CMOS) image sensor |
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| US20010025926A1 (en) * | 2000-03-30 | 2001-10-04 | Kabushiki Kaisha Toshiba | Thermal infrared sensor and a method of manufacturing the same |
| CN101546118A (en) * | 2008-03-26 | 2009-09-30 | 索尼株式会社 | Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing back-illuminated solid-state imaging device, back-illuminated solid-state imaging device an |
| CN103066088A (en) * | 2012-12-21 | 2013-04-24 | 豪威科技(上海)有限公司 | Manufacturing method of backside illuminated complementary metal-oxide-semiconductor transistor (CMOS) image sensor |
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