CN110246858A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN110246858A CN110246858A CN201910544119.8A CN201910544119A CN110246858A CN 110246858 A CN110246858 A CN 110246858A CN 201910544119 A CN201910544119 A CN 201910544119A CN 110246858 A CN110246858 A CN 110246858A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 240
- 230000003287 optical effect Effects 0.000 claims abstract description 57
- 239000010410 layer Substances 0.000 claims description 105
- 230000005622 photoelectricity Effects 0.000 claims description 44
- 230000005540 biological transmission Effects 0.000 claims description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 19
- 239000012790 adhesive layer Substances 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 238000011946 reduction process Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 7
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- 230000015572 biosynthetic process Effects 0.000 claims description 6
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- 240000007594 Oryza sativa Species 0.000 claims 2
- 238000003672 processing method Methods 0.000 claims 2
- 244000283207 Indigofera tinctoria Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
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- 238000001039 wet etching Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
A kind of imaging sensor and forming method thereof, described image sensor includes: the first substrate, and first substrate includes opposite the first face and the second face, and first substrate has first thickness；Red filter layer positioned at the first face surface, the red filter layer have the first projecting figure in first face；The second substrate in the red filter layer, second substrate includes opposite third face and fourth face, and the first face of the fourth face direction, second substrate includes third area and the 4th area, the third area and the 4th area have the second projecting figure in first face, and second projecting figure, within the scope of first projecting figure, second substrate has second thickness, and the second thickness is less than first thickness；Red green optical filter positioned at third area third face surface, the red blue optical filter positioned at the 4th area third face surface.The image quality of described image sensor is higher.
Description
Technical field
The present invention relates to semiconductors manufacture and photoelectric imaging technology field, in particular to a kind of imaging sensor and its formation
Method.
Background technique
Imaging sensor can be used for sensing radiation, for example, light radiation, including but not limited to visible light, infrared ray, ultraviolet light
Deng.Imaging sensor is divided into back-illuminated type (BSI) imaging sensor in such a way that it receives radiation and (FSI) image front-illuminated passes
Sensor.
Back side illumination image sensor can be received from its back side and be radiated.Different from imaging sensor front-illuminated, in back-illuminated type
In imaging sensor, wiring etc. may influence to radiate received component generally within the front of substrate, and light is from the back of substrate
Face incidence enters.In such manner, it is possible to make incident light beam strikes into photodiode, without being blocked by wiring, thus improve into
Light quantity is penetrated, the shooting effect under illumination condition can be significantly improved.
However, the image quality of existing back-illuminated type image sensor is still to be improved.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, to improve pixel quantity,
To improve the image quality of imaging sensor.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of imaging sensor, comprising: the first substrate, it is described
First substrate includes opposite the first face and the second face, and first substrate has first thickness；Positioned at the red of the first face surface
Color filtering optical layer, the red filter layer have the first projecting figure in first face；In the red filter layer
Two substrates, second substrate include opposite third face and fourth face, and the fourth face is towards the first face, second base
Bottom includes third area and the 4th area, and the third area and the 4th area have the second projecting figure in first face, and described the
Two projecting figures are within the scope of first projecting figure, and second substrate has second thickness, and the second thickness is small
In first thickness；Red green optical filter positioned at third area third face surface, positioned at the red of the 4th area third face surface
Blue optical filter.
Optionally, the proportional region of the second thickness and first thickness is 1:0.4~1:16.
Optionally, the range of the second thickness is 0.5 micron~3 microns.
Optionally, the range of the first thickness is 2 microns~5 microns.
Optionally, first substrate includes: the firstth area and the secondth area, and the third area is projected in institute in the first face
It states within the scope of the firstth area, the 4th area is projected within the scope of secondth area the first face.
Optionally, further includes: the first photoelectricity doped region in the firstth area；The second photoelectricity doping in the secondth area
Area；Third photoelectricity doped region in third area；The 4th photoelectricity doped region in the 4th area.
Optionally, further includes: first positioned at second face of the firstth area surface transmits gate structure；Positioned at described second
The second transmission gate structure on area, surface, the second face；Third positioned at the third area fourth face surface transmits gate structure；Position
The 4th in the 4th area fourth face surface transmits gate structure.
Optionally, further includes: the first medium floor positioned at firstth area and the secondth area the second face surface, and described first
Dielectric layer is located at the top of the first transmission gate structure top and sidewall surfaces and the second transmission gate structure and sidewall surfaces.
Optionally, further includes: the second dielectric layer positioned at the third area and the 4th area fourth face surface, and described second
Dielectric layer is located at the top of third transmission gate structure and sidewall surfaces and the second transmission gate structure top and sidewall surfaces.
Optionally, further includes: be located at the lenticule of red green optical filter and red blue optical filter surface.
Optionally, further includes: the adhesive layer positioned at first medium layer surface and the carrier crystalline substance positioned at bonding layer surface
Circle, and the adhesive layer is between first medium layer and carrier wafer.
The embodiment of the present invention also provides a kind of forming method of imaging sensor, comprising: the first substrate of offer, described first
Substrate includes opposite the first face and the second face, and first substrate has first thickness；It is formed on first face red
Filter layer, the red filter layer have the first projecting figure in first face；Second substrate, the second substrate packet are provided
Opposite third face and fourth face are included, second substrate includes third area and the 4th area, and the third area and the 4th area are in institute
The first face is stated with the second projecting figure, and second projected image is within the scope of first projected image, described second
Substrate has second thickness, and the second thickness is less than first thickness；The fourth face is bonded towards the first face, it is described red
Color filtering optical layer is between the first substrate and the second substrate；Red green optical filter is formed on third area third face surface, in institute
It states the 4th area, surface, third face and forms red blue optical filter.
Optionally, the proportional region of the second thickness and first thickness is 1:0.4~1:16.
Optionally, the second thickness range is 0.5 micron~3 microns.
Optionally, the first thickness range is 2 microns~5 microns.
Optionally, further includes: formed before the red filter layer, first is carried out to first face of the first substrate and is thinned
Processing；First substrate has initial first thickness between the first reduction processing, and first reduction processing makes described the
One substrate has first thickness.
Optionally, the method for first reduction processing includes: offer carrier wafer；By second face of the first substrate with
The carrier wafer side is bonded；After the bonding processing, the first substrate is carried out from first face surface thinned
Technique.
Optionally, first substrate includes: the firstth area and the secondth area, and the third area is projected in institute in the first face
It states within the scope of the firstth area, the 4th area is projected within the scope of secondth area the first face；The shape of described image sensor
At method further include: before carrying out the first reduction processing to first face of the first substrate, on second face of the firstth area surface
The first transmission gate structure is formed, forms the second transmission gate structure on the secondth area the second face surface；In firstth area
First medium floor is formed with second area the second face surface, the first medium layer is located at the top of the first transmission gate structure and side wall
Surface and the second transmission gate structure top and sidewall surfaces.
Optionally, the forming method of the red filter layer includes: to form the first adhesion layer on first face surface；?
The first adherency layer surface forms red filter layer；The second adhesion layer is formed in the red filter layer surface.
Optionally, the material of first adhesion layer includes: silica, silicon nitride or fire sand；Described second is viscous
The material of attached layer includes: silica, silicon nitride or fire sand.
Optionally, further includes: it is formed after the red filter layer, before the fourth face is bonded towards the first face,
The third area fourth face surface forms third and transmits gate structure, forms the 4th transmission grid on the 4th area fourth face surface
Pole structure；Second dielectric layer is formed in the third area and the 4th area fourth face surface, and the second dielectric layer is located at third
It transmits and transmits gate structure top and sidewall surfaces with sidewall surfaces and the 4th at the top of gate structure；The second dielectric layer
Between the second substrate and red filter layer.
Optionally, further includes: after the fourth face is bonded towards the first face, form the red green optical filter and red blue filter
Before mating plate, the second reduction processing is carried out to the third face of second substrate；Second substrate the second reduction processing it
Before, second substrate has initial second thickness, and second reduction processing makes second substrate have second thickness.
Optionally, the method for second reduction processing includes: to be bonded second substrate with the first substrate；Institute
After stating bonding processing, reduction process is carried out to the second substrate from third face surface.
Optionally, further includes: the first photoelectricity doped region is formed in firstth area；Second is formed in secondth area
Photoelectricity doped region；Third photoelectricity doped region is formed in the third area；The 4th photoelectricity doped region is formed in the 4th area.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In the imaging sensor that technical solution of the present invention provides, when incident light is irradiated from the third face of the second substrate, institute
It states incident light and first passes around red green optical filter and red blue optical filter.Since the lesser substrate of thickness is conducive to green light and blue light
It absorbing, the biggish substrate of thickness is conducive to the absorption to feux rouges, therefore, and when the second thickness is less than first thickness, i.e., second
The thickness of substrate less than the first substrate thickness when, lesser second substrate of thickness can be absorbed through in red green optical filter
Most of green light and through most of blue light in red blue optical filter.Meanwhile lesser second substrate of thickness penetrates big portion
Dividend light.And then most of feux rouges penetrates second substrate, continues the incident feux rouges for being located at first the first face of substrate surface and filters
Photosphere, biggish first substrate of thickness can absorb most of feux rouges.To sum up, second substrate can fully absorb green light and
Blue light, first substrate can fully absorb feux rouges, while first substrate and the second substrate are different substrates, are not required to
More occupied space areas are wanted, so that pixel quantity can be increased in the identical situation of area, so that the imaging of imaging sensor
Quality is higher.
Further, described image sensor includes: the first photoelectricity doped region in the firstth area, in the secondth area
Second photoelectricity doped region, the third photoelectricity doped region in third area, the 4th photoelectricity doped region in the 4th area, and institute
The first substrate and the second substrate is stated to arrange along perpendicular to the first substrate surface direction, thus in the case where area is certain, photoelectricity
The quantity of doped region increases, and is conducive to increase pixel quantity, so that the image quality of imaging sensor is higher.
Further, described image sensor includes: to transmit gate structure positioned at the first of second face of the firstth area surface,
Second positioned at second face of the secondth area surface transmits gate structure, and the third positioned at the third area fourth face surface is transmitted
Gate structure transmits gate structure, and first substrate and the second substrate positioned at the 4th of the 4th area fourth face surface
It arranges along perpendicular to the first substrate surface direction, so that the quantity for transmitting gate structure increases in the case where area is certain, has
Conducive to operational performance is improved, so that the image quality of imaging sensor is higher.
In the forming method for the imaging sensor that technical solution of the present invention provides, by the first face key of the fourth face direction
It closes, when incident light is irradiated from the third face of the second substrate, the incident light first passes around red green optical filter and red blue optical filter.
When the second thickness be less than first thickness, i.e., the thickness of the second substrate less than the first substrate thickness when, the thickness is smaller
The second substrate can absorb through most of green light in red green optical filter and through most of blue in red blue optical filter
Light.Meanwhile lesser second substrate of thickness is through most of feux rouges.And then most of feux rouges penetrates second substrate, continues
Incidence is located at the feux rouges filter layer on first the first face of substrate surface, and biggish first substrate of thickness can absorb most of feux rouges.
To sum up, second substrate can fully absorb green light and blue light, and first substrate can fully absorb feux rouges, while described
First substrate and the second substrate are different substrates, do not need more occupied space areas, thus in the identical situation of area, energy
Enough increase pixel quantity, so that the image quality of imaging sensor is higher.
Detailed description of the invention
Fig. 1 to Fig. 8 is the diagrammatic cross-section of each step of forming method of the imaging sensor in one embodiment of the invention.
Specific embodiment
As described in background, the image quality of conventional images sensor is poor.
By reducing logic area area and reducing the method for pixel region size, it can reach and increase image sensor pixel
Purpose, to improve the image quality of imaging sensor.
However, partial arithmetic performance can be reduced by reducing logic area area, and it will receive technique and device itself to minimum line
Wide limitation.The photosensitive property of chip can be reduced by reducing pixel region size, and equally can be by technique and device itself to minimum line
Wide limitation, so that the performance of imaging sensor is still poor.
To solve the technical problem, the embodiment of the present invention provides a kind of imaging sensor, comprising: the first substrate, it is described
First substrate includes opposite the first face and the second face, and first substrate has first thickness；Positioned at the red of the first face surface
Color filtering optical layer；The second substrate in the red filter layer, second substrate include opposite third face and fourth face,
The fourth face is towards the first face, and second substrate includes third area and the 4th area, and the third area and the 4th area are in third
Face is projected within the scope of red filter layer, and second substrate has second thickness, and the second thickness is less than first
Thickness；Red green optical filter positioned at third area third face surface, the red blue optical filtering positioned at the 4th area third face surface
Piece.The image quality of described image sensor is preferable.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 1 to Fig. 8 is the diagrammatic cross-section of each step of forming method of the imaging sensor in one embodiment of the invention.
Referring to FIG. 1, providing the first substrate 200, first substrate 200 includes opposite the first face 201 and the second face
202, first substrate 200 has first thickness.
In the present embodiment, first substrate 200 includes: the first area I and the second area II.
In the present embodiment, the material of first substrate 200 is silicon substrate.In other embodiments, the substrate is
Silicon-Germanium substrate, silicon carbide substrates, silicon-on-insulator substrate, germanium substrate on insulator, glass substrate or III-V compound lining
The selection at bottom, such as gallium nitride substrate or gallium arsenide substrate etc., first substrate is unrestricted, and can choose needs suitable for technique
The material asked or be easily integrated.
There is the first well region (not shown) in first substrate 200, in first well region doped with first from
Son
In the present embodiment, before subsequent the first reduction processing to the progress of 200 first face 201 of the first substrate, further includes:
The first photoelectricity doped region (not shown) is formed in the firstth area I；The second photoelectricity doped region is formed in secondth area
(not shown).
In the first photoelectricity doped region and the second photoelectricity doped region doped with the second ion, and second ion is led
The conduction type of electric type and the first ion is on the contrary, make the conduction type of the first photoelectricity doped region and the first well region on the contrary,
The conduction type of two photoelectricity doped regions and the first well region constitutes photodiode on the contrary, therefore, so as to will be in incident light
Converting photons are electronics.
In the present embodiment, before subsequent the first reduction processing to the progress of 200 first face 201 of the first substrate, further includes:
202 surface of the second face firstth area I forms the first transmission gate structure 211, in the 202 surface shape of the second face the secondth area II
At the second transmission gate structure 212；First medium floor 213 is formed in the firstth area I and 202 surface of the second the second face area II,
The first medium layer 213 is located at 211 top of the first transmission gate structure and sidewall surfaces and the second transmission gate structure
212 tops and sidewall surfaces.
The first transmission gate structure 212 is used to control the transmission of light induced electron in the first photoelectricity doped region, and described the
Two transmission gate structures 213 are used to control the transmission of light induced electron in the second photoelectricity doped region.
It should be noted that first substrate has initial first thickness before the first reduction processing of subsequent progress,
First reduction processing is carried out to first face of the first substrate, makes first substrate 200 that there is first thickness, described first subtracts
The detailed process of thin processing please refers to Fig. 2 to Fig. 3.
Referring to FIG. 2, providing carrier wafer 300；By 200 second face 202 of the first substrate and the carrier wafer 300
Side is bonded.
The carrier wafer 300 can be common silicon substrate or other suitable substrates.
In the present embodiment, the material of the carrier wafer 300 is identical as the material of the first substrate 200, is silicon (Si).
In other embodiments, the handle substrate material includes germanium (Ge), SiGe (GeSi), silicon carbide, on insulator
Silicon, germanium on insulator, GaAs or compounds of group.
In the present embodiment, the bonding technology is oxide fusion bonding technology.
Specifically, adhesive layer 310 is formed on 300 surface of carrier wafer；The first of 202 surface of the second face will be located to be situated between
Matter layer 213 and adhesive layer 310 positioned at 300 surface of carrier wafer are bonded；After the laminating process, lehr attendant is carried out
Skill is bonded the carrier wafer 300 and the first substrate 200.
The adhesive layer 310 is used for the adhesive layer to fit as carrier wafer 300 and first medium layer 213, conducive to mentioning
Rise the tightness degree of bonding.
The material of the adhesive layer 310 includes: silica, silicon nitride or fire sand.In the present embodiment, described viscous
The material for closing layer 310 is silica.
Referring to FIG. 3, after the bonding processing carrying out that work is thinned to the first substrate 200 from 201 surface of the first face
Skill.
By the reduction process, the thickness of first substrate 200 is made to be reduced to first thickness from initial first thickness.
The reduction process includes: one of dry etch process and wet-etching technology or two kinds of combinations.
In the present embodiment, the reduction process are as follows: chemical mechanical milling tech.In other embodiments, described to be thinned
Technique are as follows: wet-etching technology.
The first thickness range is 2 microns~5 microns.
The reason of selecting the thickness range is: if the first thickness less than 2 microns, the first base of thinner thickness
Bottom 200 is lower to the absorption coefficient of feux rouges, that is, and the first substrate 200 cannot be fully absorbed the subsequent feux rouges through red filter layer,
It is unfavorable for the increase of pixel, the image quality of the imaging sensor resulted in is still lower；If it is micro- that the first thickness is greater than 5
Rice, then the first thicker substrate 200 of thickness is unfavorable for improving the biggish integrated level of device density, the imaging sensor resulted in
Performance it is poor.
Referring to FIG. 4, after carrying out the first reduction processing to 200 first face 201 of the first substrate, in first face
Red filter layer 222 is formed on 201, the red filter layer 222 has the first projecting figure in first face 201.
The forming method of the red filter layer 222 includes: to form the first adhesion layer 221 on 201 surface of the first face；
Red filter layer 222 is formed on 221 surface of the first adhesion layer；The second adherency is formed on 222 surface of red filter layer
Layer 223.
First adhesion layer 221 is for adhesive layer as the first substrate 200 and red filter layer 222, described in increase
Adhesiveness between 200 first face 201 of red filter layer 222 and the first substrate, to improve the property of the imaging sensor of formation
Energy.
Second adhesion layer 223 increases for the adhesive layer as red filter layer 222 and the second substrate of subsequent bonding
Add the adhesiveness between the red filter layer 222 and the second substrate, to improve the performance of the imaging sensor of formation.
The material of first adhesion layer 221 includes: silica, silicon nitride or fire sand；Second adhesion layer
223 material includes: silica, silicon nitride or fire sand.
In the present embodiment, the material of first adhesion layer 221 is silica, the material of second adhesion layer 223
For silica.
Referring to FIG. 5, providing the second substrate 230, second substrate 230 includes opposite third face 203 and fourth face
204, second substrate 230 includes third area III and the 4th area IIII, and the third area III and the 4th area IIII are described
First face 201 has the second projected image, and second projected image is within the scope of first projected image, and described second
Substrate 230 has second thickness, and the second thickness is less than first thickness.
In the present embodiment, the material of second substrate 230 is silicon substrate.In other embodiments, the substrate is
Silicon-Germanium substrate, silicon carbide substrates, silicon-on-insulator substrate, germanium substrate on insulator, glass substrate or III-V compound lining
The selection at bottom, such as gallium nitride substrate or gallium arsenide substrate etc., first substrate is unrestricted, and can choose needs suitable for technique
The material asked or be easily integrated.
There is the second well region (not shown) in second substrate 200, in second well region doped with third from
Son.
In the present embodiment, it is subsequent by the fourth face 204 towards before the bonding of the first face 201, further includes: described the
Three area's III fourth faces, 204 surface forms third and transmits gate structure 231, and in the 4th area, 204 surface of IIII fourth face is formed
4th transmission gate structure 232；Second dielectric layer is formed in the third area III and 204 surface of the 4th area's IIII fourth face
233, and the second dielectric layer 233 is located at 231 top of third transmission gate structure and sidewall surfaces and the 4th transmission grid
232 top of structure and sidewall surfaces.
Third transmission gate structure 231 is used to control the transmission of light induced electron in third photoelectricity doped region, and described the
Four transmission gate structures 232 are used to control the transmission of light induced electron in the 4th photoelectricity doped region.
It should be noted that second substrate has initial second thickness before the second reduction processing of subsequent progress,
To second substrate the second reduction processing of progress, make second substrate 200 that there is second thickness.
Referring to FIG. 6, the fourth face 204 is bonded towards the first face 201, the red filter layer 222 is located at first
Between substrate 200 and the second substrate 230.
The red filter layer 222 is between the first substrate 200 and the second substrate 230, and therefore, subsequent ray is from second
When the third face 203 of substrate 230 is incident, the red filter layer not will transmit through by most of feux rouges that the second substrate 230 absorbs
222, and then enter first substrate 200.
In the present embodiment, subsequent to carry out the second thinned place after the fourth face 204 is bonded towards the first face 201
Before reason, further includes: form third photoelectricity doped region (not shown) in the third area III；In the 4th area
Form the 4th photoelectricity doped region (not shown).
In the third photoelectricity doped region and the 4th photoelectricity doped region doped with the 4th ion, and the third ion is led
The conduction type of electric type and the 4th ion is on the contrary, make the conduction type of third photoelectricity doped region and the second well region on the contrary,
The conduction type of four photoelectricity doped regions and the second well region constitutes photodiode on the contrary, therefore, so as to will be in incident light
Converting photons are electronics.
In other embodiments, be bonded in the fourth face towards the first face, and the second reduction processing of subsequent progress it
Afterwards, third photoelectricity doped region is formed in the third area III；The 4th photoelectricity doped region is formed in the 4th area.
Referring to FIG. 7, the third face 203 to second substrate 230 carries out the second reduction processing.
Second reduction processing makes second substrate 230 have second thickness.
The proportional region of the second thickness and first thickness is 1:0.4~1:16.
The range of the second thickness is 0.5 micron~3 microns.
The reason of selecting the thickness range is: if the second thickness less than 0.5 micron, due to second substrate
230 through the green light of red green optical filter and absorb blue light through red blue optical filter for subsequent absorption, thickness it is too thin the
Two substrates 230 are unfavorable for absorbing the green light and blue light, are unfavorable for the increase of pixel, and the imaging sensor resulted in is at image quality
It measures still lower；If the second thickness be greater than 3 microns, the second thicker substrate 230 of thickness be unfavorable for improve device density compared with
The performance of big integrated level, the imaging sensor resulted in is poor.
The method of second reduction processing includes: to be bonded second substrate 230 with the first substrate 200；Institute
After stating bonding processing, reduction process is carried out to the second substrate from third face surface.
In the present embodiment, the bonding technology is oxide fusion bonding technology.
Specifically, the second dielectric layer 233 on 230 fourth face of the second substrate, 204 surface will be located at and positioned at red filter
Second adhesion layer 223 on 222 surface of photosphere is bonded；After the laminating process, annealing process is carried out, second base is made
Bottom 230 and the bonding of the first substrate 200.
The reduction process includes: one of dry etch process and wet-etching technology or two kinds of combinations.
In the present embodiment, the reduction process are as follows: chemical mechanical milling tech.In other embodiments, described to be thinned
Technique are as follows: wet-etching technology.
Referring to FIG. 8, forming red green filter on 203 surface of third area III third face after second reduction processing
Mating plate 241 forms red blue optical filter 242 on the 4th area, 203 surface, IIII third face.
It should be noted that the red green optical filter 241 can penetrate feux rouges, green light, the red blue optical filtering can be also penetrated
Piece 242 can light transmission feux rouges, can also penetrate blue light.
In the present embodiment, after second reduction processing, the red green optical filter 241 and red blue optical filter are formed
Before 242, further includes: form third adhesion layer 243 on 230 third face of the second substrate, 203 surface.
The third adhesion layer 243 is used to increase red green optical filter 241 and red blue optical filter 242 and the second substrate 230
Adhesiveness improves structural stability, to improve the performance of the imaging sensor of formation.
The material of the third adhesion layer 243 includes: silica, silicon nitride or fire sand.In the present embodiment, institute
The material for stating third adhesion layer 243 is silica.
By the way that the fourth face 204 to be bonded towards the first face 201, when incident light is from the third face 203 of the second substrate 230
When irradiation, the incident light first passes around red green optical filter 241 and red blue optical filter 242.When the second thickness is less than first
Thickness, the i.e. thickness of the second substrate 230 less than the first substrate 200 thickness when, lesser second substrate 230 of thickness can
It absorbs through most of green light in red green optical filter 241 and through most of blue light in red blue optical filter 242.Meanwhile
Lesser second substrate 230 of thickness is through most of feux rouges.And then most of feux rouges penetrates second substrate 230, continue into
The feux rouges filter layer 222 positioned at 201 surface of the first 200 first face of substrate is penetrated, biggish first substrate 200 of thickness can absorb greatly
Part feux rouges.To sum up, second substrate 230 can fully absorb green light and blue light, and first substrate 200 can sufficiently inhale
Feux rouges is received, while first substrate 200 and the second substrate 230 are different substrates, do not need more occupied space areas, thus
In the identical situation of area, pixel quantity can be increased, so that the image quality of imaging sensor is higher.
In the present embodiment, it is formed after the red green optical filter 241 and red blue optical filter 242, further includes: respectively in institute
It states red green optical filter 241 and red blue 242 surface of optical filter forms lenticule 250.
The present invention also provides a kind of imaging sensors formed using the above method, with continued reference to FIG. 8, including: first
Substrate 200, first substrate 200 include opposite the first face 201 and the second face 202, and first substrate 200 has first
Thickness；Red filter layer 222 positioned at 201 surface of the first face, the red filter layer 222 have the in first face 201
One projecting figure；The second substrate 230 in the red filter layer 222, second substrate 230 include opposite third
Face 203 and fourth face 204, and the fourth face 204 is towards the first face 201, second substrate 200 include third area III and
4th area IIII, the third area III and the 4th area IIII have the second projecting figure, and described the in first face 201
For two projecting figures within the scope of first projecting figure, second substrate 230 has second thickness, and the second thickness
Less than first thickness；Red green optical filter 241 positioned at 203 surface of third area III third face is located at the 4th area IIII
The red blue optical filter 242 on 203 surface of third face.
When incident light is irradiated from the third face 203 of the second substrate 230, the incident light first passes around red green optical filter
241 and red blue optical filter 242.Since the lesser substrate of thickness is conducive to the absorption to green light and blue light, the biggish substrate of thickness
Be conducive to the absorption to feux rouges, therefore, when the second thickness is less than first thickness, i.e., the thickness of the second substrate 230 is less than the
When the thickness of one substrate 200, lesser second substrate 230 of thickness can be absorbed through the big portion in red green optical filter 241
Divide green light and through most of blue light in red blue optical filter 242.Meanwhile lesser second substrate 230 of thickness penetrates big portion
Dividend light.And then most of feux rouges penetrates second substrate 230, continues incident positioned at 201 surface of the first 200 first face of substrate
Feux rouges filter layer 222, biggish first substrate 200 of thickness can absorb most of feux rouges.To sum up, second substrate 230
Green light and blue light can be fully absorbed, first substrate 200 can fully absorb feux rouges, while 200 He of the first substrate
Second substrate 230 is different substrate, more occupied space areas is not needed, to can increase in the identical situation of area
Pixel quantity, so that the image quality of imaging sensor is higher.
It is described in detail below in conjunction with attached drawing.
The proportional region of the second thickness and first thickness is 1:0.4~1:16.
The range of the second thickness is 0.5 micron~3 microns.In the present embodiment, the second of second substrate 230
With a thickness of 1 micron.
The reason of selecting the thickness range is: if the second thickness less than 0.5 micron, due to second substrate
230 through the green light of red green optical filter and absorb blue light through red blue optical filter for subsequent absorption, thickness it is too thin the
Two substrates 230 are unfavorable for absorbing the green light and blue light, are unfavorable for the increase of pixel, and the imaging sensor resulted in is at image quality
It measures still lower；If the second thickness be greater than 3 microns, the second thicker substrate 230 of thickness be unfavorable for improve device density compared with
The performance of big integrated level, the imaging sensor resulted in is poor.
The range of the first thickness is 2 microns~5 microns.In the present embodiment, the first of first substrate 200 is thick
Degree is 4 microns.
The reason of selecting the thickness range is: if the first thickness less than 2 microns, the first base of thinner thickness
Bottom 200 is lower to the absorption coefficient of feux rouges, that is, and the first substrate 200 cannot be fully absorbed the subsequent feux rouges through red filter layer,
It is unfavorable for the increase of pixel, the image quality of the imaging sensor resulted in is still lower；If it is micro- that the first thickness is greater than 5
Rice, then the first thicker substrate 200 of thickness is unfavorable for improving the biggish integrated level of device density, the imaging sensor resulted in
Performance it is poor.
In the present embodiment, first substrate 200 includes: the first area I and the second area II, and the third area III exists
First face 201 is projected within the scope of the firstth area I, and the 4th area IIII is projected in described second in the first face 201
Within the scope of area II.
In the present embodiment, described image sensor further include: the first photoelectricity doped region in the first area I；It is located at
The second photoelectricity doped region in second area II；Third photoelectricity doped region in third area III；In the 4th area IIII
4th photoelectricity doped region.
Since the firstth area I and the second area II is located in the first substrate 200, the third area III and the 4th area IIII
In the second substrate 230, and first substrate 200 and the second substrate 230 are arranged along perpendicular to 200 surface direction of the first substrate
Column are conducive to increase pixel quantity so that the quantity of photoelectricity doped region increases in the case where area is certain, so that image passes
The image quality of sensor is higher.
In the present embodiment, described image sensor further include: positioned at the first of 202 surface of the second face the firstth area I
Transmit gate structure 211；Second positioned at 202 surface of the second face the secondth area II transmits gate structure 212；Positioned at described
The third on three area's III fourth faces, 204 surface transmits gate structure 231；Positioned at the of 204 surface of the 4th area IIII fourth face
Four transmission gate structures 232.
Since the firstth area I and the second area II is located in the first substrate 200, the third area III and the 4th area IIII
In the second substrate 230, and first substrate 200 and the second substrate 230 are arranged along perpendicular to 200 surface direction of the first substrate
Column are conducive to improve operational performance, so that image so that the quantity for transmitting gate structure increases in the case where area is certain
The image quality of sensor is higher.
In the present embodiment, described image sensor further include: be located at the firstth area I and the second the second face area II 202
The first medium layer 213 on surface, and the first medium layer 213 be located at the first transmission gate structure 211 top and sidewall surfaces,
And second transmission gate structure 212 top and sidewall surfaces.
In the present embodiment, described image sensor further include: be located at the third area III and the 4th area's IIII fourth face
The second dielectric layer 233 on 204 surfaces, and the second dielectric layer 233 is located at 231 top of third transmission gate structure and side wall table
Face and 232 top of the second transmission gate structure and sidewall surfaces.
In the present embodiment, described image sensor further include: be located at red green optical filter 241 and red blue optical filter
The lenticule 250 on 242 surfaces.
In the present embodiment, described image sensor further include: positioned at 213 surface of first medium layer adhesive layer 310, with
And the carrier wafer 300 positioned at 310 surface of adhesive layer, and the adhesive layer 310 is located at first medium layer 213 and carrier wafer
Between 300.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (24)
1. a kind of imaging sensor characterized by comprising
First substrate, first substrate include opposite the first face and the second face, and first substrate has first thickness；
Red filter layer positioned at the first face surface, the red filter layer have the first projecting figure in first face；
The second substrate in the red filter layer, second substrate include opposite third face and fourth face, and institute
Fourth face is stated towards the first face, second substrate includes third area and the 4th area, and the third area and the 4th area are described the
There is the second projecting figure on one side, and second projecting figure is within the scope of first projecting figure, second substrate
With second thickness, and the second thickness is less than first thickness；
Red green optical filter positioned at third area third face surface, the red blue optical filtering positioned at the 4th area third face surface
Piece.
2. imaging sensor as described in claim 1, which is characterized in that the proportional region of the second thickness and first thickness
For 1:0.4~1:16.
3. imaging sensor as claimed in claim 2, which is characterized in that the range of the second thickness is 0.5 micron~3 micro-
Rice.
4. imaging sensor as claimed in claim 2, which is characterized in that the range of the first thickness is 2 microns~5 micro-
Rice.
5. imaging sensor as described in claim 1, which is characterized in that first substrate includes: the firstth area and the secondth area,
And the third area being projected within the scope of firstth area in the first face, the 4th area are projected in described the first face
Within the scope of 2nd area.
6. imaging sensor as claimed in claim 5, which is characterized in that further include: the first photoelectricity in the firstth area is mixed
Miscellaneous area；The second photoelectricity doped region in the secondth area；Third photoelectricity doped region in third area；In the 4th area
4th photoelectricity doped region.
7. imaging sensor as claimed in claim 5, which is characterized in that further include: it is located at second face of the firstth area surface
First transmission gate structure；Second positioned at second face of the secondth area surface transmits gate structure；Positioned at the third area
The third on fourth face surface transmits gate structure；The 4th positioned at the 4th area fourth face surface transmits gate structure.
8. imaging sensor as claimed in claim 7, which is characterized in that further include: it is located at firstth area and the secondth area the
The first medium layer in two faces surface, and the first medium layer be located at first transmission gate structure at the top of and sidewall surfaces and
Second transmission gate structure top and sidewall surfaces.
9. imaging sensor as claimed in claim 7, which is characterized in that further include: it is located at the third area and the 4th area the
The second dielectric layer on four sides surface, and the second dielectric layer be located at third transmission gate structure at the top of and sidewall surfaces and
Second transmission gate structure top and sidewall surfaces.
10. imaging sensor as described in claim 1, which is characterized in that further include: it is located at red green optical filter and red indigo plant
The lenticule on optical filter surface.
11. imaging sensor as claimed in claim 7, which is characterized in that further include: positioned at the bonding of first medium layer surface
Layer and carrier wafer positioned at bonding layer surface, and the adhesive layer is between first medium layer and carrier wafer.
12. a kind of forming method of imaging sensor characterized by comprising
The first substrate is provided, first substrate includes opposite the first face and the second face, and first substrate has the first thickness
Degree；
Red filter layer is formed on first face, the red filter layer has the first projecting figure in first face；
The second substrate is provided, second substrate includes opposite third face and fourth face, and second substrate includes third area
With the 4th area, the third area and the 4th area have the second projecting figure in first face, and second projected image exists
Within the scope of first projected image, second substrate has second thickness, and the second thickness is less than first thickness；
The fourth face is bonded towards the first face, the red filter layer is between the first substrate and the second substrate；
Red green optical filter is formed on third area third face surface, forms red blue optical filtering on the 4th area third face surface
Piece.
13. the forming method of imaging sensor as claimed in claim 12, which is characterized in that the second thickness and the first thickness
The proportional region of degree is 1:0.4~1:16.
14. the forming method of imaging sensor as claimed in claim 13, which is characterized in that the second thickness range is
0.5 micron~3 microns.
15. the forming method of imaging sensor as claimed in claim 13, which is characterized in that the first thickness range is 2
Micron~5 microns.
16. the forming method of imaging sensor as claimed in claim 12, which is characterized in that further include: form the red
Before filter layer, the first reduction processing is carried out to first face of the first substrate；First substrate the first reduction processing it
Between have initial first thickness, first reduction processing make first substrate have first thickness.
17. the forming method of imaging sensor as claimed in claim 16, which is characterized in that the side of first reduction processing
Method includes: offer carrier wafer；First substrate, second face is bonded with the carrier wafer side；At the bonding
After reason, reduction process is carried out to the first substrate from first face surface.
18. the forming method of imaging sensor as claimed in claim 16, which is characterized in that first substrate includes:
One area and the secondth area, and the third area being projected within the scope of firstth area in the first face, the 4th area is in the first face
Be projected within the scope of secondth area；The forming method of described image sensor further include: to first face of the first substrate
Before carrying out the first reduction processing, the first transmission gate structure is formed on the firstth area the second face surface, in secondth area
Second face surface forms the second transmission gate structure；First medium floor is formed in firstth area and second area the second face surface,
The first medium layer is located at the top of the first transmission gate structure and at the top of sidewall surfaces and the second transmission gate structure and side
Wall surface.
19. the forming method of imaging sensor as claimed in claim 12, which is characterized in that the formation of the red filter layer
Method includes: to form the first adhesion layer on first face surface；Red filter layer is formed in the first adherency layer surface；?
The red filter layer surface forms the second adhesion layer.
20. the forming method of imaging sensor as claimed in claim 19, which is characterized in that the material of first adhesion layer
It include: silica, silicon nitride or fire sand；The material of second adhesion layer includes: silica, silicon nitride or nitrogen carbon
SiClx.
21. the forming method of imaging sensor as claimed in claim 12, which is characterized in that further include: form the red
After filter layer, before the fourth face is bonded towards the first face, third is formed on the third area fourth face surface and transmits grid
Pole structure forms the 4th transmission gate structure on the 4th area fourth face surface；In the third area and the 4th area's fourth face
Surface forms second dielectric layer, and the second dielectric layer is located at the top of third transmission gate structure and sidewall surfaces, Yi Ji
Four transmission gate structures tops and sidewall surfaces；The second dielectric layer is between the second substrate and red filter layer.
22. the forming method of imaging sensor as claimed in claim 13, which is characterized in that further include: the fourth face court
To after the bonding of the first face, formed before the red green optical filter and red blue optical filter, to the third face of second substrate into
The second reduction processing of row；For second substrate before the second reduction processing, second substrate has initial second thickness, institute
Stating the second reduction processing makes second substrate have second thickness.
23. the forming method of imaging sensor as claimed in claim 22, which is characterized in that the side of second reduction processing
Method includes: to be bonded second substrate with the first substrate；After bonding processing, from third face surface to the
Two substrates carry out reduction process.
24. the forming method of imaging sensor as claimed in claim 18, which is characterized in that further include: in firstth area
The first photoelectricity doped region of interior formation；The second photoelectricity doped region is formed in secondth area；Third is formed in the third area
Photoelectricity doped region；The 4th photoelectricity doped region is formed in the 4th area.
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Application publication date: 20190917 |