CN111313860B - Bulk acoustic resonator with protective structure layer, filter and electronic device - Google Patents
Bulk acoustic resonator with protective structure layer, filter and electronic device Download PDFInfo
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- CN111313860B CN111313860B CN201911198282.XA CN201911198282A CN111313860B CN 111313860 B CN111313860 B CN 111313860B CN 201911198282 A CN201911198282 A CN 201911198282A CN 111313860 B CN111313860 B CN 111313860B
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- 230000001681 protective effect Effects 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006355 external stress Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and the piezoelectric layer is arranged between the bottom electrode and the top electrode. A first gap exists between a sandwich structure formed by the bottom electrode, the top electrode and the piezoelectric layer and the upper surface of the substrate, and the first gap enables the main body resonance structure of the resonator to be in non-contact with the substrate; a protective structure layer having a first portion connected to the upper surface of the substrate and a second portion having an outer end connected to an inner end of the first portion, the second portion extending above the piezoelectric layer along the piezoelectric layer and at least a portion of the second portion forming a second gap with the piezoelectric layer in a thickness direction, the second portion being spaced apart from the top electrode in a lateral direction; the second portion of the protective structure layer is discontinuously disposed in the circumferential direction of the resonator or has a through hole therethrough. The invention also discloses a filter with the resonator and electronic equipment with the filter or the resonator.
Description
Technical Field
The present invention relates to the field of semiconductors, and more particularly, to a bulk acoustic wave resonator, a filter, and an electronic device having the resonator or the filter.
Background
As an essential element of electronic devices, electronic devices have been widely used, and their application range includes mobile phones, automobiles, home electric appliances, and the like. In addition, technologies such as artificial intelligence, internet of things, 5G communication and the like, which are about to change the world in the future, still need to rely on electronic devices as a basis.
Film bulk acoustic resonators (Film Bulk Acoustic Resonator, abbreviated as FBARs, also called BAWs) are playing an important role as important members of piezoelectric devices in the communication field, particularly FBAR filters have an increasing share of market in the field of radio frequency filters, and FBARs have excellent characteristics of small size, high resonant frequency, high quality factor, large power capacity, good roll-off effect and the like, and the filters are gradually replacing traditional Surface Acoustic Wave (SAW) filters and ceramic filters, playing a great role in the field of radio frequency for wireless communication, and the advantages of high sensitivity can be applied to sensing fields such as biology, physics, medicine and the like.
The structural main body of the film bulk acoustic resonator is a sandwich structure consisting of electrodes, piezoelectric films and electrodes, namely a layer of piezoelectric material is sandwiched between two metal electrode layers. By inputting a sinusoidal signal between the two electrodes, the FBAR converts an input electrical signal into mechanical resonance using an inverse piezoelectric effect, and converts the mechanical resonance into an electrical signal output using a piezoelectric effect.
A high frequency resonator with a high quality factor and low dynamic impedance is preferred for an integrated oscillator. In recent years, as the package size of the resonator is reduced, frequency drift of the resonator due to the influence of external stress is more serious, and the performance and stability of the resonator are seriously affected.
With the rapid development of integrated circuit technology, the frequency stability of FBAR resonators is increasingly important. In order to accommodate the trend of miniaturization, it is necessary to solve or alleviate the frequency stability problem of the FBAR resonator.
Disclosure of Invention
In order to alleviate or solve the above-mentioned problems in the prior art, the present invention proposes a bulk acoustic wave resonator whose frequency is not affected by external stress.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic mirror;
a bottom electrode having a bottom electrode pin;
a top electrode having a top electrode pin;
a piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a first gap exists between a sandwich structure formed by the bottom electrode, the top electrode and the piezoelectric layer and the upper surface of the substrate, and the first gap enables a main resonance area of the resonator formed by the bottom electrode, the piezoelectric layer and the top electrode to be in non-contact with the substrate;
a protective structural layer including a first portion connected to an upper surface of the substrate and a second portion connected at an outer end thereof to an inner end thereof, the second portion extending above the piezoelectric layer along the piezoelectric layer and forming a second gap with the piezoelectric layer in a thickness direction, and the second portion being spaced apart from the top electrode in a lateral direction;
the second portion of the protective structure layer is discontinuously arranged in the circumferential direction of the resonator or there is a through hole passing through the second portion.
The embodiment of the invention also relates to a filter comprising the bulk acoustic wave resonator.
Embodiments of the invention also relate to an electronic device comprising a filter as described above or a resonator as described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout the several views, and wherein:
FIG. 1A is a schematic cross-sectional view (in the direction B-B of FIG. 1B or FIG. 1C) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
FIG. 1B is a schematic top view of the bulk acoustic wave resonator of FIG. 1A in accordance with an exemplary embodiment of the invention;
FIG. 1C is a schematic top view of the bulk acoustic wave resonator of FIG. 1A in accordance with an exemplary embodiment of the invention;
FIG. 2A is a schematic cross-sectional view (in the direction B-B of FIG. 2B) of a bulk acoustic wave resonator according to an exemplary embodiment of the invention;
FIG. 2B is a schematic top view of the bulk acoustic wave resonator of FIG. 2A in accordance with an exemplary embodiment of the invention;
FIG. 2C is a schematic cross-sectional view (in the direction C-C of FIG. 2B) of a bulk acoustic wave resonator according to an exemplary embodiment of the invention;
FIG. 2D is a schematic cross-sectional view (in the direction D-D of FIG. 2B) of a bulk acoustic wave resonator according to an exemplary embodiment of the invention;
FIG. 3 is a schematic cross-sectional view of a bulk acoustic wave resonator (similar to the direction B-B along FIG. 1B or FIG. 1C) according to an exemplary embodiment of the present invention;
FIG. 4A is a schematic cross-sectional view (in the direction B-B of FIG. 4B) of a bulk acoustic wave resonator according to an exemplary embodiment of the invention;
FIG. 4B is a schematic top view of the bulk acoustic wave resonator of FIG. 4A in accordance with an exemplary embodiment of the invention;
fig. 5A to 5F are schematic top views of bulk acoustic wave resonators according to an exemplary embodiment of the present invention, which respectively show different structural forms of the protective structural layer.
Detailed Description
The technical scheme of the invention is further specifically described below through examples and with reference to the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of embodiments of the present invention with reference to the accompanying drawings is intended to illustrate the general inventive concept and should not be taken as limiting the invention.
Fig. 1A is a schematic cross-sectional view (in the direction B-B of fig. 1B or 1C) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. Fig. 1B is a schematic top view of the bulk acoustic wave resonator of fig. 1A in accordance with an exemplary embodiment of the invention. Fig. 1C is a schematic top view of the bulk acoustic wave resonator of fig. 1A in accordance with an exemplary embodiment of the invention.
In fig. 1A to 1C, reference numerals are denoted as follows:
101: substrates, e.g. silicon, etc
103: cavities, other acoustic mirror structures such as Bragg reflector layers
105: a bottom electrode, which is not in contact with the substrate 101 and has an air gap
107: a piezoelectric layer having an air gap between a portion of the piezoelectric layer located outside the bottom electrode (a portion within the main body resonance region) and the substrate 101
109: top electrode
111: passivation layers, e.g. aluminum nitride (ALN), silicon nitride, etc
113: an air gap separating the bottom electrode 105 and the substrate 101, the piezoelectric layer 107 and the substrate 101, the protective structure 115 and the piezoelectric layer 107
115: the protection structure is composed of two parts: the portion connected to the substrate is a first portion 115a, and the suspended portion, which is not connected to the other layers, is a second portion 115b, which is a suspended structure. The end point of the second portion is located between the bottom electrode and the top electrode in the horizontal direction. The material of the protective structure 115 may be a metal, such as gold, molybdenum, aluminum, etc., an alloy, or other materials. If the material is not easy to oxidize, only one layer of the protection structure 115 is needed, and if the material is easy to oxidize, a passivation layer is added above the protection structure 115.
W1: the distance between the bottom electrode 105 and the top electrode 109. In the embodiment shown in FIG. 1, the second end point (inner end, in the present invention, the end or side closer to the center of the active area of the resonator is inner; and correspondingly the first end point is outer, in the present invention, the end or side farther from the center of the active area of the resonator is outer) of the protective structure 115 is horizontally spaced from the top electrode 109 by W0<W +.W1. The specific range is not more than 15. Mu.m.
W2: the distance between the bottom electrode 105 and the same side end of the piezoelectric layer 107. The specific range is 3-50 μm:
h1: the distance between the protective structure 115 and the piezoelectric layer 107. The specific range is as follows:
optionally, an optional
H2: distance between the piezoelectric layer 107 and the substrate 101. The specific range is as follows:
optionally, an optional
In the present invention, the numerical ranges mentioned may be median values between the end points or other values in addition to the end points, which are all within the scope of the present invention.
It is noted that in the embodiments of the present invention, the protective structure 115 is provided, but as will be appreciated by those skilled in the art, the protective structure 115 may not be provided in the case where there is a gap between the main body resonance region of the resonator and the upper surface of the substrate. Here, the bulk resonant structure refers to a sandwich structure region of the resonator from which the top and bottom electrode lead portions are removed. In the present invention, the overlapping region of the bottom electrode, the piezoelectric layer, the top electrode, and the acoustic mirror in the thickness direction of the resonator constitutes the effective region of the resonator. In the invention, the condition that a gap exists between the main body resonator structure and the upper surface of the substrate means that a gap exists between the main body resonator structure and the upper surface of the substrate except for an effective area or an acoustic mirror area.
Because a gap is formed between the main body resonance structure of the sandwich structure of the resonator and the substrate, the frequency of the resonator is not affected by the stress of the substrate. This contributes to the stability of the resonator frequency.
When the protection structure 115 is provided, if the resonator is deformed during operation, the protection structure 115 can limit the deformation amount of the resonator, so that the resonator is not easy to deform or break.
Fig. 1B and 1C respectively show the case where the electrode pins are arranged on different sides and the electrode pins are arranged on the same side.
In fig. 1B, the electrode pins 117 and 119 are located on different sides, and the protection structure 115 is divided into two parts. In fig. 1C, the electrode pins 117 and 119 are located on the same side, which is advantageous for the continuity of the protection structure, and the protection structure is an integral body, so that the protection effect is better.
Fig. 2A is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the invention (along
B-B direction of fig. 2B). Fig. 2B is a schematic top view of the bulk acoustic wave resonator of fig. 2A in accordance with an exemplary embodiment of the present invention. Fig. 2C and 2D are schematic cross-sectional views (along the C-C and D-D directions, respectively, of fig. 2B) of a bulk acoustic wave resonator according to a further exemplary embodiment of the present invention.
In the embodiment shown in fig. 2A-2D and described later, a passivation layer 116 is provided on the protective structure 115. The material of the protection structure 115 may be, for example, molybdenum, and the material of the protection structure 115 may be the same as or different from the top electrode. The material of the passivation layer 116 may be the same as or different from the material of the passivation layer 111, for example, alN.
In fig. 2A-2D, it can be seen that the guard structure 115 is located outside the bottom electrode in the lateral direction. This avoids overlapping of the inner end of the guard structure 115 and the bottom electrode in the thickness direction of the resonator, compared to the embodiment of fig. 1A, and thus avoids the formation of a small sandwich structure. In the embodiment shown in fig. 2A-2D, the protection structure 115 is not present to affect the performance of the resonator due to the additional sandwich structure.
Fig. 3 is a schematic cross-sectional view of a bulk acoustic wave resonator (similar to the direction B-B in fig. 1B or 1C) according to an exemplary embodiment of the present invention. In order to further reduce the influence of the protective structure on the performance of the resonator, in fig. 3, a bottom electrode is arranged, which is located inside the acoustic mirror, in projection in the thickness direction of the resonator.
Fig. 4A is a schematic cross-sectional view (in the direction B-B of fig. 4B) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. Fig. 4B is a schematic top view of the bulk acoustic wave resonator of fig. 4A in accordance with an exemplary embodiment of the present invention.
As shown in fig. 4A-4B, the inner end of the second portion of the protective structure 115 is directly connected to the piezoelectric layer, so that the protective structure in the embodiment shown in fig. 4A and 4B is a semi-floating structure, as compared to the floating structure of the protective structure 115 in the previous embodiment.
In a further embodiment, as shown in fig. 4A, the connection of the inner end of the second portion of the protective structure 115 to the piezoelectric layer is located beyond the edge of the bottom electrode in the lateral direction of the resonator.
In the embodiment shown in fig. 1A-4B, the second portion of the protection structure layer is a continuous integral structure, in the manufacturing process, the release difficulty of the sacrificial layer with a longer and narrower passage is greater, and the stress of the protection structure layer is not easy to release, so that the protection structure layer is easy to deform under the action of the stress, and the gap between the protection structure layer and the main resonance structure is not easy to control, and the adhesion is possibly caused, or the gap is too large, so that a good protection effect on the main resonance structure cannot be achieved.
As shown in fig. 5A, the holes may be hollowed out above the second portion of the protective structure, and the shape of the holes may be square, triangular, trapezoidal, arc-shaped or other shapes, and the size and number of the holes may be changed according to actual situations. Fig. 5A shows a rectangle.
As shown in fig. 5B, the first portion of the protection structure is a continuous structure, the second portion is a discontinuous structure, and the discontinuous structure may be rectangular, or may be triangular, trapezoidal, arc-shaped or other shapes, and finally form a comb-shaped structure, and fig. 5B is rectangular.
As shown in fig. 5C, the protection structure is a separation structure, and the first portion and the second portion of the protection structure are both separation structures, and the separation structure may be rectangular, triangular, trapezoidal, arc-shaped, or other shapes.
Fig. 5C shows a rectangle.
As shown in fig. 5D, the protective structure may be provided only in a portion, such as only at a corner, on all or a portion of the edges, or a combination of both, and may be a continuous structure or a separate structure. Fig. 5D shows the arrangement at the corners, the structure being a discrete structure.
As shown in fig. 5E, the protection structure can be simplified, i.e., disposed only at the corners. The structure shown in fig. 5E may be used for so-called semi-floating protective structure layers, such as that shown in fig. 4A, although other forms of protective structure layers are also possible.
In addition to simplifying the protective structure, the stability of the protective structure can be increased by selecting a specific shape. As shown in fig. 5F, the individual protective structures are trapezoidal in plan view. For the protective structure layer shown in fig. 4A, for example, the structure shown in fig. 5F can increase the stability of the protective structure layer and enhance the shock absorbing effect.
As can be appreciated by those skilled in the art, although in fig. 5A-5F the electrode pins are disposed on the same side, the protection structure of fig. 5A-5F may also be used in resonators where the electrode pins are disposed on different sides.
As can be appreciated by those skilled in the art, bulk acoustic wave resonators according to the present invention can be used to form filters.
Based on the above, the invention provides the following technical scheme:
1. a bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode having a bottom electrode pin;
a top electrode having a top electrode pin;
a piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a first gap exists between a sandwich structure formed by the bottom electrode, the top electrode and the piezoelectric layer and the upper surface of the substrate, and the first gap enables a main resonance area of the resonator formed by the bottom electrode, the piezoelectric layer and the top electrode to be in non-contact with the substrate;
a protective structural layer including a first portion connected to an upper surface of the substrate and a second portion connected at an outer end thereof to an inner end thereof, the second portion extending above the piezoelectric layer along the piezoelectric layer and forming a second gap with the piezoelectric layer in a thickness direction, and the second portion being spaced apart from the top electrode in a lateral direction;
the second portion of the protective structure layer is discontinuously arranged in the circumferential direction of the resonator or there is a through hole passing through the second portion.
2. The resonator of claim 1, wherein:
the top electrode pin and the bottom electrode pin are positioned on opposite sides of the resonator in the transverse direction;
the protective structure layer is disposed along a perimeter of the resonator active area and includes first and second circumferential portions separated by a top electrode pin and a bottom electrode pin in a circumferential direction.
3. The resonator of claim 1, wherein:
the top electrode pin and the bottom electrode pin are positioned on the same side of the resonator in the transverse direction;
the protective structure layer is arranged along the periphery of the resonator effective area, and the top electrode pins and the bottom electrode pins are positioned at gaps of the protective structure layer in the circumferential direction in a top view of the resonator.
4. The resonator of claim 1, wherein:
the second gap extends over the entire portion of the second portion, an inner end of the second portion being spaced apart from the piezoelectric layer in a thickness direction of the resonator.
5. The resonator of claim 1, wherein:
the inner end of the second portion is connected with the piezoelectric layer.
6. The resonator according to claim 5, wherein:
the inner end of the second portion and the projection of the bottom electrode in the thickness direction of the resonator are spaced apart from each other.
7. The resonator of claim 1, wherein:
the first gap communicates with the second gap.
8. The resonator according to claim 7, wherein:
the acoustic mirror is an acoustic mirror cavity, and the first gap is communicated with the acoustic mirror cavity.
9. The resonator of any one of claims 1-8, wherein:
the second portion is provided with a plurality of through holes therethrough.
10. The resonator of claim 9, wherein:
the through holes are one or more of rectangle, triangle, trapezoid and circle.
11. The resonator of claim 9, wherein:
the plurality of through holes are arranged along a circumferential direction of the second portion.
12. The resonator of any one of claims 1-8, wherein:
the second portion includes a plurality of discontinuities connected to the first portion, the plurality of discontinuities being spaced apart from one another in a circumferential direction of the second portion.
13. The resonator of claim 12, wherein:
the plurality of discontinuities form a toothed structure connected to the first portion.
14. The resonator of any one of claims 1-8, wherein:
the protective structure layer includes a plurality of sub-protective structures circumferentially spaced apart from one another.
15. The resonator of claim 14, wherein:
each sub-protection structure has a first sub-portion corresponding to the first portion and a second sub-portion corresponding to the second portion.
16. The resonator of claim 15, wherein:
the sub-protection structure is arranged at the corner of the effective area of the resonator; or (b)
The sub-protection structure is arranged in the middle of the edge of the effective area of the resonator.
17. The resonator of claim 16, wherein:
the width of the second sub-portion is smaller than the width of the first sub-portion.
18. The resonator of claim 17, wherein:
in a top view of the resonator, each of the sub-protection structures has a trapezoid shape or a triangle shape in which an outer end of the sub-protection structure is large and an inner end is small.
19. A filter comprising a bulk acoustic wave resonator according to any one of claims 1-18.
20. An electronic device comprising a filter according to 19 or a bulk acoustic wave resonator according to any of claims 1-18.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (20)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode having a bottom electrode pin;
a top electrode having a top electrode pin;
a piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a first gap exists between a sandwich structure formed by the bottom electrode, the top electrode and the piezoelectric layer and the upper surface of the substrate, and the first gap enables a main body resonance structure formed by the bottom electrode, the piezoelectric layer and the top electrode of the resonator to be in non-contact with the substrate;
a protective structural layer including a first portion connected to an upper surface of the substrate and a second portion connected at an outer end thereof to an inner end thereof, the second portion extending above the piezoelectric layer along the piezoelectric layer and forming a second gap with the piezoelectric layer in a thickness direction, and the second portion being spaced apart from the top electrode in a lateral direction;
the second portion of the protective structure layer is discontinuously arranged in the circumferential direction of the resonator or there is a through hole passing through the second portion.
2. The resonator of claim 1, wherein:
the top electrode pin and the bottom electrode pin are positioned on opposite sides of the resonator in the transverse direction;
the protective structure layer is disposed along a perimeter of the resonator active area and includes first and second circumferential portions separated by a top electrode pin and a bottom electrode pin in a circumferential direction.
3. The resonator of claim 1, wherein:
the top electrode pin and the bottom electrode pin are positioned on the same side of the resonator in the transverse direction;
the protective structure layer is arranged along the periphery of the resonator effective area, and the top electrode pins and the bottom electrode pins are positioned at gaps of the protective structure layer in the circumferential direction in a top view of the resonator.
4. The resonator of claim 1, wherein:
the second gap extends over the entire portion of the second portion, an inner end of the second portion being spaced apart from the piezoelectric layer in a thickness direction of the resonator.
5. The resonator of claim 1, wherein:
the inner end of the second portion is connected with the piezoelectric layer.
6. The resonator of claim 5, wherein:
the inner end of the second portion and the projection of the bottom electrode in the thickness direction of the resonator are spaced apart from each other.
7. The resonator of claim 1, wherein:
the first gap communicates with the second gap.
8. The resonator of claim 7, wherein:
the acoustic mirror is an acoustic mirror cavity, and the first gap is communicated with the acoustic mirror cavity.
9. The resonator according to any of claims 1-8, wherein:
the second portion is provided with a plurality of through holes therethrough.
10. The resonator of claim 9, wherein:
the through holes are one or more of rectangle, triangle, trapezoid and circle.
11. The resonator of claim 9, wherein:
the plurality of through holes are arranged along a circumferential direction of the second portion.
12. The resonator according to any of claims 1-8, wherein:
the second portion includes a plurality of discontinuities connected to the first portion, the plurality of discontinuities being spaced apart from one another in a circumferential direction of the second portion.
13. The resonator of claim 12, wherein:
the plurality of discontinuities form a toothed structure connected to the first portion.
14. The resonator according to any of claims 1-8, wherein:
the protective structure layer includes a plurality of sub-protective structures circumferentially spaced apart from one another.
15. The resonator of claim 14, wherein:
each sub-protection structure has a first sub-portion corresponding to the first portion and a second sub-portion corresponding to the second portion.
16. The resonator of claim 15, wherein:
the sub-protection structure is arranged at the corner of the effective area of the resonator; or (b)
The sub-protection structure is arranged in the middle of the edge of the effective area of the resonator.
17. The resonator of claim 16, wherein:
the width of the second sub-portion is smaller than the width of the first sub-portion.
18. The resonator of claim 17, wherein:
in a top view of the resonator, each of the sub-protection structures has a trapezoid shape or a triangle shape in which an outer end of the sub-protection structure is large and an inner end is small.
19. A filter comprising a bulk acoustic wave resonator according to any of claims 1-18.
20. An electronic device comprising a filter according to claim 19 or a bulk acoustic wave resonator according to any of claims 1-18.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911198282.XA CN111313860B (en) | 2019-11-29 | 2019-11-29 | Bulk acoustic resonator with protective structure layer, filter and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911198282.XA CN111313860B (en) | 2019-11-29 | 2019-11-29 | Bulk acoustic resonator with protective structure layer, filter and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019034442A1 (en) * | 2017-08-17 | 2019-02-21 | RF360 Europe GmbH | High q bulk acoustic resonator with dielectric flaps |
| CN109687835A (en) * | 2018-12-18 | 2019-04-26 | 开元通信技术（厦门）有限公司 | Thin film bulk acoustic wave resonator and preparation method thereof, filter |
| CN110504935A (en) * | 2018-05-17 | 2019-11-26 | 三星电机株式会社 | Bulk acoustic wave resonator and the method for manufacturing the bulk acoustic wave resonator |
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| US10804877B2 (en) * | 2014-01-21 | 2020-10-13 | Avago Technologies International Sales Pte. Limited | Film bulk acoustic wave resonator (FBAR) having stress-relief |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019034442A1 (en) * | 2017-08-17 | 2019-02-21 | RF360 Europe GmbH | High q bulk acoustic resonator with dielectric flaps |
| CN110504935A (en) * | 2018-05-17 | 2019-11-26 | 三星电机株式会社 | Bulk acoustic wave resonator and the method for manufacturing the bulk acoustic wave resonator |
| CN109687835A (en) * | 2018-12-18 | 2019-04-26 | 开元通信技术（厦门）有限公司 | Thin film bulk acoustic wave resonator and preparation method thereof, filter |
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