CN107063220B - Micro-hemispherical resonator gyroscope based on SOI packaging and processing method thereof - Google Patents
Micro-hemispherical resonator gyroscope based on SOI packaging and processing method thereof Download PDFInfo
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Abstract
The invention discloses a micro-hemispherical resonator gyroscope based on SOI packaging and a processing method thereof. The electrode is positioned right above the lip edge of the spherical shell, so that the defect of inconsistent capacitor gaps caused by bonding alignment precision during assembly and bonding is avoided, the processing error is reduced, and the gyro precision is improved; the processing method of the micro-hemispherical resonator gyroscope based on SOI packaging fully utilizes the advantages of an SOI wafer, so that the packaging of the whole gyroscope is greatly simplified; the height and the diameter of the spherical shell supporting handle are easy to control, the supporting strength is high, and collapse is not easy to occur.
Description
Technical Field
The invention relates to the fields of micro-electro-mechanical and inertial navigation, in particular to a micro-hemispherical resonator gyroscope based on SOI (silicon on insulator) packaging and a processing method thereof.
Background
With the development of 3-D MEMS (micro-electro-mechanical systems), the research on micro hemispherical resonator gyroscopes has been paid attention to by many researchers due to the unique advantages of the conventional hemispherical resonator gyroscopes and the trend of miniaturization of the strapdown inertial navigation system.
At present, the processing of the hemispherical shell harmonic oscillator and the electrode of the micro-hemispherical resonant gyroscope is divided into an integral type and an assembled type. The integrated processing scheme is that the micro-hemispherical shell harmonic oscillator and the electrode are processed on the same silicon wafer. The assembly type processing scheme is that the micro-hemispherical shell harmonic oscillator and the electrode are separately processed on different silicon wafers, and then the two are assembled into a whole in a bonding mode. The processing technology of the integral processing scheme is complex, and the capacitance gap between the electrode and the hemispherical shell is realized by depositing a film and then releasing the film, so that the capacitance gap is small and relatively fixed. The assembly tooling scheme is relatively simple in tooling but causes the capacitive gap to be inconsistent due to alignment errors during bonding.
In recent years, the SOI-based MEMS process is widely used in the fabrication of various high-performance micro devices. The MEMS packaging process has the difficulty of manufacturing MEMS devices, and because the MEMS devices have complex and various structures and functions and various environmental parameters, the packaging of the MEMS devices is far more complex than the packaging of ICs, and no unified standard exists yet.
Disclosure of Invention
The purpose of the invention is as follows: in order to overcome the defects of the prior art, the invention aims to provide a micro-hemispherical resonator gyroscope based on SOI packaging and a processing method thereof.
The technical scheme is as follows: in order to solve the technical problems, the invention adopts the following technical scheme:
a micro-hemispherical resonator gyroscope based on SOI packaging comprises a glass substrate, a micro-hemispherical shell harmonic oscillator, two reference voltage lead posts, electrodes, an SOI sealing wall, an upper layer of an SOI crystalline silicon wafer, a silicon dioxide layer, a first electrode hole, a second electrode hole, a spherical shell supporting handle, a circular metal electrode area and a metal lead wire; the upper layer of the SOI crystal silicon wafer is arranged above the glass substrate, the silicon dioxide layer is arranged on the bottom surface of the upper layer of the SOI crystal silicon wafer, the SOI sealing wall is arranged between the silicon dioxide layer and the glass substrate to form a closed space structure, the hemispherical surface of the micro-hemispherical shell harmonic oscillator faces downwards and is arranged in the closed space structure, the bottom of the hemispherical shell harmonic oscillator is bonded on the glass substrate through a spherical shell supporting handle, and the number of the electrodes is 16, and the electrodes are uniformly distributed on the lower surface of the silicon dioxide layer above the lip edge of the micro-hemispherical shell; the two reference voltage lead posts are respectively arranged on the 135-degree and 315-degree axes outside the micro-hemispherical shell harmonic oscillator, the first electrode holes and the second electrode holes are both in an inverted trapezoid shape and are respectively arranged on the upper layer of the SOI crystal silicon wafer, wherein the number of the first electrode holes is 16, the first electrode holes are respectively connected with 16 electrodes, and the number of the second electrode holes is two, and the second electrode holes are respectively connected with the two reference voltage lead posts; the circular metal electrode area is arranged at the center of the glass substrate and is respectively connected with the bottoms of the two reference voltage lead posts through two metal leads.
The working principle is as follows: the electrode is positioned right above the lip edge of the spherical shell, so that the problem of eccentric errors caused by inconsistent capacitor gaps due to bonding alignment precision when the micro-hemispherical shell harmonic oscillator and the electrode are assembled is solved; and the lip edge of the micro-hemispherical harmonic oscillator is provided with an annular lip outer edge, so that the dead area of the capacitor between the hemispherical shell harmonic oscillator and the electrode is increased, and the precision of the gyroscope is improved.
Preferably, the micro-hemispherical shell harmonic oscillator is fixed at the central position of the glass substrate through a bonding process; the circular metal electrode area is arranged in the spherical shell support handle.
The lip edge of the micro-hemispherical shell harmonic oscillator is provided with an annular lip outer edge, and 16 electrodes are connected with the annular lip outer edge; the positive area of the capacitor between the hemispherical shell harmonic oscillator and the electrode can be increased, and the gyro precision is improved; sixteen uniformly distributed electrodes are positioned right above the lip edge of the micro-hemispherical shell, and eccentric errors caused by alignment precision when the electrodes and the hemispherical shell harmonic oscillators are assembled and bonded are eliminated.
Preferably, metal electrodes are deposited at the central positions of the first electrode hole and the second electrode hole, and signal leads are arranged on the metal electrodes; the bottom of the metal electrode in the first electrode hole is connected with the electrode, and the bottom of the metal electrode in the second electrode hole is connected with the top end of the reference voltage lead post.
Preferably, the two reference voltage lead posts, the first electrode hole, the second electrode hole, the electrode and the SOI sealing wall are processed on the same SOI silicon wafer; the 16 first electrode holes and the two second electrode holes are positioned on the upper layer of the SOI silicon wafer, and the two reference voltage lead posts, the 16 electrodes and the SOI sealing wall are positioned on the lower layer of the SOI silicon wafer.
Preferably, the diameter of the hemispherical shell harmonic oscillator is 900-1200 μm, and the thickness of the hemispherical shell harmonic oscillator is 1-5 μm.
Preferably, the gap between the hemispherical shell harmonic oscillator and the electrode is 5-20 μm.
And a nano getter is deposited on the bottom surface of the silicon dioxide layer right above the micro-hemispherical shell harmonic oscillator, so that the vacuum degree of vacuum packaging can be ensured.
The processing method of the micro-hemispherical resonator gyroscope based on SOI packaging comprises the following steps:
(1) cleaning an SOI (silicon on insulator) crystal silicon wafer with low resistivity, taking silicon nitride on the double surfaces of the SOI silicon wafer by LPCVD (low pressure chemical vapor deposition) as a mask for etching an opening by potassium hydroxide, photoetching by using a first mask plate, positioning an inverted trapezoidal electrode hole on the upper layer of the SOI crystal silicon wafer, etching (reactive ion etching) the silicon nitride by using RIE (reactive ion etching), forming a window for etching the inverted trapezoidal electrode hole, and removing photoresist;
(2) etching the silicon inverted trapezoid electrode hole by using a potassium hydroxide solution, etching silicon dioxide exposed at the bottom of the inverted trapezoid electrode hole by using RIE (reactive ion etching) or wet etching, and removing silicon nitride; depositing a Cr/Au layer at the bottom of the inverted trapezoid electrode hole, and manufacturing a metal electrode by utilizing a stripping process;
(3) taking a PECVD (plasma enhanced chemical vapor deposition) silicon dioxide layer on the lower surface of the SOI silicon wafer as a mask, photoetching by using a second mask plate, defining the positions of an SOI sealing wall and a reference voltage lead post, etching the silicon dioxide mask layer by using RIE (reactive ion etching), photoetching by using a third mask plate, and defining the position of an electrode;
(4) using DRIE/ICP to etch the structural layer (deep reactive ion etching/plasma etching), wherein the etching depth is the height of the electrode, removing the photoresist, then using DRIE/ICP to etch the structural layer until the structural layer is etched to a silicon dioxide layer, forming a sealing wall, the electrode and a lead post, and removing the silicon dioxide;
(5) spraying photoresist, photoetching by using a fourth mask plate, and depositing a nano getter at the central position of the sealing wall so as to ensure the vacuum degree of vacuum packaging;
(6) cleaning silicon wafer, thermally growing silicon dioxide, coating photoresist, photoetching with a fifth mask plate, etching silicon dioxide, etching a circular opening in the central region of the hemispherical shell, and etching with SF6Plasma isotropic etching to form hemispherical moldRemoving the photoresist and the silicon dioxide; photoetching by using a sixth mask plate, defining the outer lip edge of the hemispherical shell, and etching by using an ICP/DRIE (inductively coupled plasma/direct injection) process to form a groove;
(7) thermally growing silicon dioxide, spraying photoresist, photoetching by using a seventh mask plate, defining a circular anchor point position at the center of the hemispherical mold, and etching the silicon dioxide by RIE (reactive ion etching);
(8) LPCVD polysilicon, doping, annealing, removing polysilicon on the surface, and taking PECVD silicon dioxide as a mask;
(9) spin-coating photoresist on the back of the silicon wafer, using an eighth mask plate for photoetching, defining the position of an annular deep groove surrounding a support column, etching silicon dioxide, etching the annular deep groove by using an ICP/DRIE (inductively coupled plasma/plasma etching) process until a silicon dioxide sacrificial layer is formed, and forming a support handle, wherein LPCVD silicon dioxide is used as a passivation layer;
(10) spin-coating photoresist on the glass substrate, photoetching by using a ninth mask plate, depositing Cr/Au, and manufacturing an electrode, a signal lead and a bonding region by using a stripping process;
(11) carrying out anodic bonding on a silicon wafer and a glass substrate, spraying photoresist, photoetching by using a tenth mask plate and etching silicon dioxide by using RIE (reactive ion etching), etching the silicon substrate outside the hemispherical shell mold by using isosexual etching gas sulfur hexafluoride or xenon difluoride, and removing the photoresist;
(12) and etching silicon dioxide by using a gaseous hydrogen fluoride etching machine, releasing the structure to avoid adhesion, carrying out gold-silicon bonding on the two structural layers to manufacture the whole micro-hemispherical resonator gyroscope and finish vacuum packaging.
Another alternative is: and (3) depositing gold or tin on the lower surface of the SOI silicon wafer, and completing the packaging through gold-gold bonding or gold-tin bonding in the step (12).
The overall dimensions of the hemispherical shell gyroscope of the present invention are approximately 3000 μm 1000 μm.
The prior art is not mentioned in the invention.
Has the advantages that: the electrode is positioned right above the lip edge of the spherical shell, so that the defect of inconsistent capacitor gaps caused by bonding alignment precision during assembly and bonding is avoided, the processing error is reduced, and the gyro precision is improved; the processing method of the micro-hemispherical resonator gyroscope based on SOI packaging fully utilizes the advantages of an SOI wafer, so that the packaging of the whole gyroscope is greatly simplified; the height and the diameter of the spherical shell supporting handle are easy to control, the supporting strength is high, and collapse is not easy to occur.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a cross-sectional view taken along plane A-A of the present invention;
FIG. 3 is a flow chart of the process of the present invention;
in the figure: the device comprises a micro-hemispherical shell harmonic oscillator 1, a glass substrate 2, a reference voltage lead wire column 3, an electrode 4, an SOI sealing wall 5, a spherical shell supporting handle 6, an SOI crystalline silicon wafer upper layer 7, a silicon dioxide layer 8, an SOI crystalline silicon wafer lower layer 9, a first electrode hole 10, a second electrode hole 11, a circular metal electrode region 12, a metal lead wire 13, a metal electrode 14, a signal lead wire 15 and a nano getter 16.
Detailed Description
In order to better understand the present invention, the following examples are further provided to illustrate the present invention, but the present invention is not limited to the following examples.
Example 1
As shown in fig. 1-3, a micro-hemispherical resonator gyroscope based on SOI packaging includes a glass substrate, a micro-hemispherical shell resonator, two reference voltage lead posts, an electrode, an SOI sealing wall, an upper layer of an SOI crystalline silicon wafer, a silicon dioxide layer, a first electrode hole, a second electrode hole, a spherical shell support handle, a circular metal electrode region and a metal lead; the upper layer of the SOI crystal silicon wafer is arranged above the glass substrate, the silicon dioxide layer is arranged on the bottom surface of the upper layer of the SOI crystal silicon wafer, the SOI sealing wall is arranged between the silicon dioxide layer and the glass substrate to form a closed space structure, the hemispherical surface of the micro-hemispherical shell harmonic oscillator faces downwards and is arranged in the closed space structure, the bottom of the hemispherical shell harmonic oscillator is bonded on the glass substrate through a spherical shell supporting handle, and the number of the electrodes is 16, and the electrodes are uniformly distributed on the lower surface of the silicon dioxide layer above the lip edge of the micro-hemispherical shell; the two reference voltage lead posts are respectively arranged on the 135-degree and 315-degree axes outside the micro-hemispherical shell harmonic oscillator, the first electrode holes and the second electrode holes are both in an inverted trapezoid shape and are respectively arranged on the upper layer of the SOI crystal silicon wafer, wherein the number of the first electrode holes is 16, the first electrode holes are respectively connected with 16 electrodes, and the number of the second electrode holes is two, and the second electrode holes are respectively connected with the two reference voltage lead posts; the circular metal electrode area is arranged at the center of the glass substrate and is respectively connected with the bottoms of the two reference voltage lead posts through two metal leads; the micro-hemispherical shell harmonic oscillator is fixed at the central position of the glass substrate through a bonding process; the circular metal electrode area is arranged in the spherical shell support handle; the lip edge of the micro-hemispherical shell harmonic oscillator is provided with an annular lip outer edge, and 16 electrodes are connected with the annular lip outer edge; metal electrodes are deposited at the central positions of the first electrode hole and the second electrode hole, and signal leads are arranged on the metal electrodes; the bottom of the metal electrode in the first electrode hole is connected with the electrode, and the bottom of the metal electrode in the second electrode hole is connected with the top end of the reference voltage lead post; the two reference voltage lead posts, the first electrode hole, the second electrode hole, the electrode and the SOI sealing wall are processed on the same SOI silicon wafer; the two reference voltage lead posts, the 16 electrodes and the SOI sealing wall are positioned on the lower layer of the SOI crystalline silicon wafer; the diameter of the hemispherical shell harmonic oscillator is 900 μm, and the thickness is 1 μm; the gap between the hemispherical shell harmonic oscillator and the electrode is 5 μm; and a nano getter is deposited on the bottom surface of the silicon dioxide layer right above the harmonic oscillator of the micro-hemispherical shell.
A processing method of a micro-hemispherical resonator gyroscope based on SOI packaging comprises the following steps:
(1) cleaning an SOI (silicon on insulator) crystal silicon wafer with low resistivity, taking silicon nitride on the double surfaces of the SOI silicon wafer by LPCVD (low pressure chemical vapor deposition) as a mask for etching an opening by potassium hydroxide, photoetching by using a first mask plate, positioning an inverted trapezoidal electrode hole on the upper layer of the SOI crystal silicon wafer, etching (reactive ion etching) the silicon nitride by using RIE (reactive ion etching), forming a window for etching the inverted trapezoidal electrode hole, and removing photoresist;
(2) etching the silicon inverted trapezoid electrode hole by using a potassium hydroxide solution, etching silicon dioxide exposed at the bottom of the inverted trapezoid electrode hole by using RIE (reactive ion etching) or wet etching, and removing silicon nitride; depositing a Cr/Au layer at the bottom of the inverted trapezoid electrode hole, and manufacturing a metal electrode by utilizing a stripping process;
(3) taking a PECVD (plasma enhanced chemical vapor deposition) silicon dioxide layer on the lower surface of the SOI silicon wafer as a mask, photoetching by using a second mask plate, defining the positions of an SOI sealing wall and a reference voltage lead post, etching the silicon dioxide mask layer by using RIE (reactive ion etching), photoetching by using a third mask plate, and defining the position of an electrode;
(4) using DRIE/ICP to etch the structural layer (deep reactive ion etching/plasma etching), wherein the etching depth is the height of the electrode, removing the photoresist, then using DRIE/ICP to etch the structural layer until the structural layer is etched to a silicon dioxide layer, forming a sealing wall, the electrode and a lead post, and removing the silicon dioxide;
(5) spraying photoresist, photoetching by using a fourth mask plate, and depositing a nano getter at the central position of the sealing wall so as to ensure the vacuum degree of vacuum packaging;
(6) cleaning silicon wafer, thermally growing silicon dioxide, coating photoresist, photoetching with a fifth mask plate, etching silicon dioxide, etching a circular opening in the central region of the hemispherical shell, and etching with SF6Carrying out isotropic etching on the plasma to form a hemispherical mold, and removing the photoresist and the silicon dioxide; photoetching by using a sixth mask plate, defining the outer lip edge of the hemispherical shell, and etching by using an ICP/DRIE (inductively coupled plasma/direct injection) process to form a groove;
(7) thermally growing silicon dioxide, spraying photoresist, photoetching by using a seventh mask plate, defining a circular anchor point position at the center of the hemispherical mold, and etching the silicon dioxide by RIE (reactive ion etching);
(8) LPCVD polysilicon, doping, annealing, removing polysilicon on the surface, and taking PECVD silicon dioxide as a mask;
(9) spin-coating photoresist on the back of the silicon wafer, using an eighth mask plate for photoetching, defining the position of an annular deep groove surrounding a support column, etching silicon dioxide, etching the annular deep groove by using an ICP/DRIE (inductively coupled plasma/plasma etching) process until a silicon dioxide sacrificial layer is formed, and forming a support handle, wherein LPCVD silicon dioxide is used as a passivation layer;
(10) spin-coating photoresist on the glass substrate, photoetching by using a ninth mask plate, depositing Cr/Au, and manufacturing an electrode, a signal lead and a bonding region by using a stripping process;
(11) carrying out anodic bonding on a silicon wafer and a glass substrate, spraying photoresist, photoetching by using a tenth mask plate and etching silicon dioxide by using RIE (reactive ion etching), etching the silicon substrate outside the hemispherical shell mold by using isosexual etching gas sulfur hexafluoride or xenon difluoride, and removing the photoresist;
(12) and etching silicon dioxide by using a gaseous hydrogen fluoride etching machine, releasing the structure to avoid adhesion, carrying out gold-silicon bonding on the two structural layers to manufacture the whole micro-hemispherical resonator gyroscope and finish vacuum packaging.
Example 2
Essentially the same as in example 1, except that: the diameter of the hemispherical shell harmonic oscillator is 1200 mu m, and the thickness of the hemispherical shell harmonic oscillator is 5 mu m; the gap between the hemispherical shell harmonic oscillator and the electrode is 20 μm.
Example 3
Essentially the same as in example 1, except that: and (3) depositing gold or tin on the lower surface of the SOI silicon wafer, and completing packaging through gold-gold bonding or gold-tin bonding in the step (12).
The gyroscope is manufactured by combining an MEMS (micro-electromechanical systems) bulk silicon processing process, a surface micro-processing process and a bonding process.
The micro-hemispherical shell preparation process and the electrode and sealing wall processing process on the SOI silicon chip are independent, and can be simultaneously processed, and then the gold-silicon bonding/gold-tin bonding/gold-gold bonding process is carried out in a vacuum environment to realize the preparation of the micro-hemispherical resonator gyroscope. The method ingeniously utilizes the characteristics of the SOI silicon wafer, realizes the vacuum packaging of the gyroscope, has simple processing technology, smaller size and lower production cost, and is suitable for batch production.
The above is only a preferred embodiment of the present invention, and it should be noted that: it will be apparent to those skilled in the art that the location of each facility can be adjusted without departing from the principles of the invention, and such adjustments should be considered within the scope of the invention.
Claims (10)
1. A micro-hemispherical resonator gyroscope based on SOI packaging is characterized in that: the device comprises a glass substrate, a micro-hemispherical shell harmonic oscillator, two reference voltage lead columns, electrodes, an SOI sealing wall, an upper layer of an SOI crystalline silicon wafer, a silicon dioxide layer, a first electrode hole, a second electrode hole, a spherical shell supporting handle, a circular metal electrode area and a metal lead; the upper layer of the SOI crystal silicon wafer is arranged above the glass substrate, the silicon dioxide layer is arranged on the bottom surface of the upper layer of the SOI crystal silicon wafer, the SOI sealing wall is arranged between the silicon dioxide layer and the glass substrate to form a closed space structure, the hemispherical surface of the micro-hemispherical shell harmonic oscillator faces downwards and is arranged in the closed space structure, the bottom of the micro-hemispherical shell harmonic oscillator is bonded on the glass substrate through a spherical shell supporting handle, and the number of the electrodes is 16, and the electrodes are uniformly distributed on the lower surface of the silicon dioxide layer above the lip edge of the micro-hemispherical shell harmonic oscillator; the two reference voltage lead posts are respectively arranged on the 135-degree and 315-degree axes outside the micro-hemispherical shell harmonic oscillator, the first electrode holes and the second electrode holes are both in an inverted trapezoid shape and are respectively arranged on the upper layer of the SOI crystal silicon wafer, wherein the number of the first electrode holes is 16, the first electrode holes are respectively connected with 16 electrodes, and the number of the second electrode holes is two, and the second electrode holes are respectively connected with the two reference voltage lead posts; the circular metal electrode area is arranged at the center of the glass substrate and is respectively connected with the bottoms of the two reference voltage lead posts through two metal leads.
2. The SOI-packaged micro-hemispherical resonator gyroscope of claim 1, wherein: the micro-hemispherical shell harmonic oscillator is fixed at the central position of the glass substrate through a bonding process; the circular metal electrode area is arranged in the spherical shell support handle.
3. The SOI-packaged micro-hemispherical resonator gyroscope of claim 1, wherein: the lip edge of the micro-hemispherical shell harmonic oscillator is provided with an annular lip outer edge, and the 16 electrodes are connected with the annular lip outer edge.
4. The SOI-packaged micro-hemispherical resonator gyroscope of claim 1, wherein: metal electrodes are deposited at the central positions of the first electrode hole and the second electrode hole, and signal leads are arranged on the metal electrodes; the bottom of the metal electrode in the first electrode hole is connected with the electrode, and the bottom of the metal electrode in the second electrode hole is connected with the top end of the reference voltage lead post.
5. An SOI-package-based micro-hemispherical resonator gyroscope according to any of claims 1-4, wherein: the two reference voltage lead posts, the first electrode hole, the second electrode hole, the electrode and the SOI sealing wall are processed on the same SOI crystal silicon wafer; the 16 first electrode holes and the two second electrode holes are positioned on the upper layer of the SOI silicon wafer, and the two reference voltage lead posts, the 16 electrodes and the SOI sealing wall are positioned on the lower layer of the SOI silicon wafer.
6. An SOI-package-based micro-hemispherical resonator gyroscope according to any of claims 1-4, wherein: the diameter of the micro-hemispherical shell harmonic oscillator is 900-1200 mu m, and the thickness of the micro-hemispherical shell harmonic oscillator is 1-5 mu m.
7. An SOI-package-based micro-hemispherical resonator gyroscope according to any of claims 1-4, wherein: the gap between the micro-hemispherical shell harmonic oscillator and the electrode is 5-20 mu m.
8. An SOI-package-based micro-hemispherical resonator gyroscope according to any of claims 1-4, wherein: and a nano getter is deposited on the bottom surface of the silicon dioxide layer right above the micro-hemispherical shell harmonic oscillator.
9. The method of fabricating an SOI-packaged micro-hemispherical resonator gyroscope according to any of claims 1 to 8, wherein: the method comprises the following steps:
(1) cleaning an SOI crystal silicon wafer with low resistivity, taking LPCVD silicon nitride on the double surfaces of the SOI crystal silicon wafer as a mask of an opening etched by potassium hydroxide, photoetching by using a first mask plate, positioning an inverted trapezoidal electrode hole in the upper layer of the SOI crystal silicon wafer, etching the silicon nitride by using RIE (reactive ion etching), forming a window for etching the inverted trapezoidal electrode hole, and removing photoresist;
(2) etching the silicon inverted trapezoid electrode hole by using a potassium hydroxide solution, etching silicon dioxide exposed at the bottom of the inverted trapezoid electrode hole by using RIE (reactive ion etching) or wet etching, and removing silicon nitride; depositing a Cr/Au layer at the bottom of the inverted trapezoid electrode hole, and manufacturing a metal electrode by utilizing a stripping process;
(3) taking a PECVD silicon dioxide layer on the lower surface of the SOI crystal silicon wafer as a mask, photoetching by using a second mask plate, defining the positions of an SOI sealing wall and a reference voltage lead post, etching the silicon dioxide mask layer by using RIE (reactive ion etching), photoetching by using a third mask plate, and defining the position of an electrode;
(4) etching the structural layer by using DRIE/ICP (dri etching/inductively coupled plasma) until the etching depth is equal to the height of the electrode, removing the photoresist, etching the structural layer by using DRIE/ICP (dri etching/inductively coupled plasma) until the structural layer is etched to a silicon dioxide layer to form an SOI (silicon on insulator) sealing wall, the electrode and a reference voltage lead post, and removing silicon dioxide;
(5) spraying photoresist, photoetching by using a fourth mask plate, and depositing a nano getter on the silicon dioxide layer corresponding to the central position of the SOI sealing wall so as to ensure the vacuum degree of vacuum packaging;
(6) cleaning a crystal silicon wafer, thermally growing silicon dioxide, coating photoresist, photoetching by using a fifth mask plate, etching the silicon dioxide, etching a circular opening in the central area of the hemispherical shell, and using SF6Carrying out isotropic etching on the plasma to form a hemispherical shell mold, and removing the photoresist and the silicon dioxide; photoetching by using a sixth mask plate, defining the outer lip edge of the hemispherical shell, and etching by using an ICP/DRIE (inductively coupled plasma/direct injection) process to form a groove;
(7) thermally growing silicon dioxide, spraying photoresist, photoetching by using a seventh mask plate, defining a circular anchor point position at the center of the hemispherical shell mold, and etching the silicon dioxide by RIE (reactive ion etching);
(8) LPCVD polysilicon, doping, annealing, removing polysilicon on the surface, and taking PECVD silicon dioxide as a mask;
(9) spin-coating photoresist on the back of the crystalline silicon wafer, photoetching by using an eighth mask plate, defining the position of an annular deep groove surrounding the spherical shell support handle, etching silicon dioxide, etching the annular deep groove by using an ICP/DRIE (inductively coupled plasma/plasma enhanced etching) process until a silicon dioxide sacrificial layer is formed, and forming the spherical shell support handle, wherein LPCVD silicon dioxide is used as a passivation layer;
(10) spin-coating photoresist on a glass substrate, photoetching by using a ninth mask plate, depositing Cr/Au, and manufacturing a circular metal electrode area, a metal lead and a bonding area by using a stripping process;
(11) carrying out anodic bonding on the crystalline silicon wafer and the glass substrate, spraying photoresist, photoetching by using a tenth mask plate and etching silicon dioxide by using RIE (reactive ion etching), etching the silicon substrate outside the hemispherical shell mold by using isosexual etching gas sulfur hexafluoride or xenon difluoride, and removing the photoresist;
(12) and etching silicon dioxide by using a gaseous hydrogen fluoride etching machine, releasing the structure to avoid adhesion, carrying out gold-silicon bonding on the two structural layers to manufacture the whole micro-hemispherical resonator gyroscope and finish vacuum packaging.
10. The method of fabricating an SOI-packaged micro-hemispherical resonator gyroscope of claim 9, wherein: and (3) depositing gold or tin on the lower surface of the SOI crystal silicon wafer, and completing packaging through gold-gold bonding or gold-tin bonding in the step (12).
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| CN109186574A (en) * | 2018-09-20 | 2019-01-11 | 北方电子研究院安徽有限公司 | A kind of micro hemispherical resonator gyro |
| CN109115243B (en) * | 2018-09-20 | 2021-06-25 | 北方电子研究院安徽有限公司 | Preparation method of spherical electrode micro-hemispherical resonator gyroscope based on ion implantation |
| CN109945894A (en) * | 2019-04-08 | 2019-06-28 | 哈尔滨工业大学 | The installation error compensation method of hemispherical resonant gyro harmonic oscillator and outer frame |
| CN113514082B (en) * | 2021-07-14 | 2022-07-12 | 中国人民解放军国防科技大学 | Assembly fixture, assembly system and assembly method for micro-hemispherical resonant gyroscope structure |
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