CN203298772U - Three-chip assembled type silica-based ultrathin micro semisphere resonance gyroscope - Google Patents
Three-chip assembled type silica-based ultrathin micro semisphere resonance gyroscope Download PDFInfo
- Publication number
- CN203298772U CN203298772U CN201320260275XU CN201320260275U CN203298772U CN 203298772 U CN203298772 U CN 203298772U CN 201320260275X U CN201320260275X U CN 201320260275XU CN 201320260275 U CN201320260275 U CN 201320260275U CN 203298772 U CN203298772 U CN 203298772U
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- micro
- semisphere
- little
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Gyroscopes (AREA)
Abstract
The utility model discloses a three-chip assembled type silica-based ultrathin micro semisphere resonance gyroscope. The gyroscope comprises a first silicon chip, a second silicon chip, a third silicon chip, a micro semisphere casing, a drive electrode and a detection electrode, wherein the first silicon chip is arranged above the second silicon chip; the third silicon chip is arranged below the second silicon chip; the micro semisphere casing is arranged between the first silicon chip and the second silicon chip; the bottom of the micro semisphere casing and the second silicon chip are fixedly connected; the upper edge of the micro semisphere casing is contacted with the lower surface of the first silicon chip; the drive electrode is arranged on the periphery of the micro semissphere casing, one end is fixedly connected with the third silicon chip, and the other end penetrates through the second silicon chip and is movably connected with the first silicon chip; and one end of the detection electrode is fixedly connected with the first silicon chip, and the other end is movably connected with the inner wall of the micro semisphere casing. The three-chip assembled type silica-based ultrathin micro semisphere resonance gyroscope is small in size, light, low in cost, high in reliability, small in power consumption and capable of performing batch production, can be used in the fields of aviation, automobiles, medical treatment, photography, electronic consumption and the like, and has an extremely wide application prospect.
Description
Technical field
The utility model relates to the design field of micro-electro-mechanical gyroscope, particularly the silica-based ultra-thin little hemispherical resonant gyro of a kind of three assembly types.
Background technology
Gyrostatic development experience the dynamically tuned gyro, DTG from the liquid floated gyroscope of the 1950's to the seventies, gyrotron from the ring laser gyroscope of the eighties, fibre optic gyroscope to the nineties, until more microelectromechanical systems (micro-electro-mechanical-system, MEMS) gyroscope is reported in research at present.This wherein, gyrotron based on theory of oscillation, due to the rotor that there is no High Rotation Speed and corresponding supporting system, thereby have stable performance, the characteristics that simple in structure, reliability is high, load-bearing capacity is large, volume is little, cost is low, its mechanism be utilize dither object when rotated the De Geshi that produces (Coriolis) effect carry out measured angular speed.The versions such as the Tuning Fork Gyroscopes instrument, piezoelectric vibration gyroscope, housing resonant gyroscope instrument are arranged at present.In all kinds of gyrotrons, the development prospect of hemispherical resonant gyro (Hemispherical Resonator Gyroscope, HRG) is the most wide.
The U.S. is the country of early start research HRG in the world, and as far back as the sixties in 20th century, HRG just set about developing in the Delco company of the U.S., and applied for first and obtained the utility model patent of HRG in 1979.After this, the research of HRG application is developed rapidly, and the application of succeeding on the spacecrafts such as strap-down navigation system, Hubble and NEAR spaceship, A2100 series satellite, Cassini spaceship.Early, on gyrostatic design, signal processing and system, its theory is all quite leading in Muscovite HRG development starting.In the end of the year 2002, the HRG that Minsk design bureau development is drawn by Russia is whole demonstrations of finished item, and consider the formal application that drops into.Britain is in the principle of work of the HRG that begins one's study in 1984, and British Aerospace system and equipment company limited are for a long time at research cylinder shell-type gyrotron, and the trend of oriented HRG development.France utilizes Muscovite personnel and technology, has developed the HRG that diameter is 20mm.In addition, TaiWan, China university analyzes hemispherical resonant gyro mode, and the model machine that is 50mm to the harmonic oscillator radius has carried out experimental study.BJ University of Aeronautics ﹠ Astronautics, Northeastern University, Nanjing Aero-Space University etc. analyze problems such as the parameter designing of hemispherical resonator, vibrations theoretically.26 development works of always adhering to HRG of science and technology group of China Electronics, and obtained larger progress, it utilizes Russian technology in earlier stage, be to have obtained breakthrough on the HRG manufacture craft of 60mm at diameter, developed corresponding high-performance model machine, main exploitation diameter is the HRG of 30mm at present, and in October, 2012, is successfully completed satellite closed cycle control experiment.
Above-described hemispherical resonant gyro all belongs to traditional hemispherical resonant gyro, and its size relatively large (more than the millimeter magnitude), can not deserve to be called for gyroscope, and this is also from having limited on the one hand its range of application.And it is little, lightweight to utilize the little hemispherical resonant gyro of silicon that the manufacturing of MEMS technology forms will have a volume, and cost is low, reliability is high, and power consumption is little, the advantage such as can be mass, expection can be widely used in the fields such as aviation, automobile, medical treatment, photography, E-consumer, has broad application prospects.
And at present, corresponding with the wide development prospect of little hemispherical resonant gyro is that the micro-processing technology level of China is lower, with external bleeding edge, also has a certain distance.Therefore, work out the Micromachining Technology that tallies with the national condition, and improve on this basis the key point that lifting is raising China micro-processing technology level.
The utility model content
The utility model purpose: the technical problems to be solved in the utility model is to provide a kind of biplate integrated form silica-based ultra-thin little hemispherical resonant gyro.
Technical scheme: the silica-based ultra-thin little hemispherical resonant gyro of three assembly types described in the utility model, comprise the first silicon chip, the second silicon chip, the 3rd silicon chip, little hemispherical Shell, drive electrode and detecting electrode, described the first silicon chip is located at the top of the second silicon chip, the below that the 3rd silicon chip is located at the second silicon chip, described little hemispherical Shell is located between the first silicon chip and the second silicon chip, be fixedly connected with the second silicon chip at the bottom of little hemispherical Shell shell, little hemispherical Shell coboundary contacts with the lower surface of the first silicon chip; Described drive electrode is located between the first silicon chip and the 3rd silicon chip, the periphery of little hemispherical Shell, and drive electrode one end is fixedly connected with the 3rd silicon chip, and the other end passes the second silicon chip and the first silicon chip is flexibly connected; Described detecting electrode one end is fixedly connected with the first silicon chip, and the other end and little hemispherical Shell inwall are flexibly connected.
Little, lightweight in order to reach volume, described little hemispherical Shell diameter is the 1-3 millimeter, and thickness is the 5-15 micron.
For the vacuum tightness of retainer member Vacuum Package, on described the first silicon chip and one side relative with the second silicon chip be provided with Nano getter.
As preferably, described drive electrode is 4n, and wherein n is the integer more than or equal to 1.
For the ease of assembling, described the first silicon chip is provided with the jack corresponding with drive electrode, and described jack is located at the periphery of detecting electrode.
Be connected with the first silicon chip for the ease of making drive electrode pass the second silicon chip, described the second silicon chip is provided with the through hole corresponding with drive electrode.
For little hemispherical Shell can be driven by static, described ultra-thin little hemispherical Shell material is metal, and electrode material is polysilicon.
The job operation of above-mentioned three silica-based ultra-thin little hemispherical resonant gyros of assembly type mainly comprises the following steps:
(1) etch eight through holes in the behind of the second silicon chip;
(2) at the second front side of silicon wafer deposit silicon dioxide as template layer, and open the opening of wicket as isotropic etching;
(3) use SF
6Isotropic etching obtains little hemisphere mould of silicon, and passes into hydrogen and at high temperature anneal to reduce surfaceness;
(4) prepare little semiglobe by methods such as sputter, deposit or thermal oxides;
(5) structured material that utilizes cmp removal the second silicon chip upper surface deposit or sputter to obtain, outside monocrystalline silicon is exposed to;
(6) the spherical shell material is carried out annealing in process, the internal stress that produces while discharging in advance deposit or sputter structured material;
(7) select SF
6, XeF
2, TMAH or KOH, discharge little hemispherical Shell structure;
(8) etch drive electrode on the 3rd silicon chip; Etching prepares detecting electrode on the first silicon chip;
(9) by the good through hole of etching in advance in step (1), drive electrode is assembled together with little hemispherical Shell from little hemispherical Shell below, simultaneously detecting electrode and little hemispherical Shell is assembled, and carried out Vacuum Package.
Wherein XeF2 had higher selectivity (〉 1000: 1 to most of material in step (7)), the selectivity of SF6 slightly poor (200: 1 left and right), TMAH and KOH belong to highly basic, to the selectivity of some metal, are not very high.In addition,, if when the little hemispherical Shell material that discharges is the dielectric such as silicon dioxide, silicon nitride, need to after discharging, spherical shell structure carry out metalized to spherical shell, so that spherical shell can be driven by static;
, as preferably, in described step (4), when selected materials is metal, select the method for sputter; When selected materials is polysilicon or silicon nitride, need the method with low-pressure chemical vapor phase deposition; , when selected materials is silicon dioxide,, by little hemisphere mould of the above-mentioned silicon of high-temperature thermal oxidation, obtain high-quality silica membrane.
As preferably, described in described step (7), little hemispherical Shell material is metal or silicon dioxide, and when little hemispherical Shell material was metal, the material of protection polysilicon electrode was silicon dioxide; When little hemispherical Shell material was silicon dioxide, the material of protection polysilicon electrode was silicon nitride, and after discharging little hemispherical Shell, it is carried out metalized.
The technology that the utility model is not particularly limited is prior art.
Beneficial effect: the utlity model has following beneficial effect:
One, adopt silicon materials as processing structure, silicon has advantages of well realizes electric property and mechanical property, and by the MEMS processes, cost is low, can be mass-produced.
Two, use little hemispherical resonant gyro stable performance that this processing technology produces, simple in structure, reliability is high, load-bearing capacity is large, cost is low, power consumption is little, performance has had further lifting than traditional hemispherical resonant gyro, its size is less, quality factor are higher, weight is lighter, and range of application is also wider.
Three, proposed a kind of job operation of processing this little hemispherical resonant gyro harmonic oscillator, this job operation combines surperficial micro-processing technology and body micro-processing technology.Specifically, this job operation is produced in little hemispherical Shell, drive electrode and detecting electrode on three different silicon chips, and such benefit is that processing technology is simple, and the process technology level present with China adapts.
Description of drawings
Fig. 1 is the structural representation of three silica-based ultra-thin little hemispherical resonant gyros of assembly type of the utility model;
Fig. 2 is the structural representation of three silica-based ultra-thin little hemispherical resonant gyro the first silicon chips of assembly type;
Fig. 3 is the structural representation of three silica-based ultra-thin little hemispherical resonant gyro the second silicon chips of assembly type;
Fig. 4 is the structural representation of three silica-based ultra-thin little hemispherical resonant gyro the 3rd silicon chips of assembly type;
Fig. 5 is three silica-based ultra-thin little hemispherical resonant gyro materials show figure of assembly type;
Fig. 5 (a)-Fig. 5 (h) is three main processing process figure of the silica-based ultra-thin little hemispherical resonant gyro of assembly type;
1 jack, 2 Nano getters, 3 detecting electrodes, 4 first silicon chips, 5 little hemispherical Shells, 6 second silicon chips, 7 through holes, 8 drive electrodes, 9 the 3rd silicon chips, 10 monocrystalline silicon, 11 silicon dioxide, 12 polysilicons, 13 spherical shell materials, 14Pyrex, 15 Nano getters in figure.
Embodiment
Three silica-based ultra-thin little hemispherical resonant gyros of assembly type as Figure 1-4, comprise the first silicon chip, the second silicon chip, the 3rd silicon chip, little hemispherical Shell, drive electrode and detecting electrode, described the first silicon chip is located at the top of the second silicon chip, the below that the 3rd silicon chip is located at the second silicon chip, described little hemispherical Shell is located between the first silicon chip and the second silicon chip, be fixedly connected with the second silicon chip at the bottom of little hemispherical Shell shell, little hemispherical Shell coboundary contacts with the lower surface of the first silicon chip; Described drive electrode is located between the first silicon chip and the 3rd silicon chip, the periphery of little hemispherical Shell, and drive electrode one end is fixedly connected with the 3rd silicon chip, and the other end passes the second silicon chip and the first silicon chip is flexibly connected; Described detecting electrode one end is fixedly connected with the first silicon chip, and the other end and little hemispherical Shell inwall are flexibly connected.
The job operation of above-mentioned three silica-based ultra-thin little hemispherical resonant gyro structures of assembly type as shown in Fig. 5-Fig. 5 (h) mainly comprises the following steps:
(1) etch eight through holes in the behind of the second silicon chip, the degree of depth is 250 microns, is used for final step assembling drive electrode;
(2) at the second front side of silicon wafer deposit silicon dioxide as template layer, and open the opening of wicket as isotropic etching;
(3) use SF
6Isotropic etching obtains little hemisphere mould of silicon, and passes into hydrogen and at high temperature anneal to reduce surfaceness;
(4) the selection of material is metal, selects the method for sputter, prepares the little semiglobe of metal;
(5) utilize cmp (CMP) to remove the structured material that the second silicon chip upper surface sputter obtains, thereby monocrystalline silicon is exposed to outer so that follow-up release spherical shell;
(6) oxidized in order to prevent metal, need to use the method for rapid thermal treatment (RTP) to carry out annealing in process to the spherical shell material, the internal stress that is produced when discharging in advance deposit or sputter structured material, these stress can allow spherical shell can't keep its shape when structure discharges, be usually expressed as film and roll.
(7) select SF
6Dry etching, discharge little hemispherical Shell, and little hemispherical Shell diameter is 1 millimeter, and thickness is 10 microns;
(8) etch 8 drive electrodes on the 3rd silicon chip, wherein it should be noted that in order to ensure the electrostatic isolation between electrode, need to use SOI(Silicon-on-Insulator) wafer; Etching prepares detecting electrode on the first silicon chip, and this process need application Glass reflow technique is made one and enclosed the electrode of electrostatic isolation on borosilicate glass;
(9) by the good through hole of etching in advance in step (1), drive electrode is assembled together with little hemispherical Shell from little hemispherical Shell below, simultaneously detecting electrode and little hemispherical Shell are assembled, and carrying out Vacuum Package, Nano getter also can be integrated on borosilicate glass so that the vacuum tightness of retainer member Vacuum Package.
It should be noted that the improved Glass reflow of the processing and utilization technique of detecting electrode in procedure of processing (8), its concrete steps are: the first, etch the pillar of 50 microns of upright length on the silicon chip of high doped; The second, utilize the anode linkage technology, in the vacuum of 300 degrees centigrade with the borosilicate glass sheet of 500 microns of thickness together with wafer bonding that etching is completed, be etched on silicon chip one facing to glass; The 3rd, the wafer that bonding is good is heated to 750 degrees centigrade in high temperature furnace, and vacuum makes glass be sucked in the groove that etches by vacuum under the state that melts; The 4th, cmp polishes glass sheet, and makes silicon expose; The 5th, carry out the photoetching that back side is aimed at, will be as the pillar etching of electrode out, thus obtain detector electrode structure.
In addition, in procedure of processing (9), each wafer is to adopt Flip Chip (flip chip, namely fall brilliant package method) to assemble, and therefore, need to carry out falling for twice brilliant method assembling, and its alignment error can accurately be controlled at below 1 micron.Method for packing is specially: at first adopt Flip Chip that second silicon chip at the 3rd silicon chip at drive electrode place and little hemispherical Shell place is fitted together, and then adopt the wafer that Flip Chip will assemble to assemble with first silicon chip at detecting electrode place, encapsulate and get final product under vacuum condition finally.
Substantially the same manner as Example 1, difference is that the step (4) of the job operation of described three silica-based ultra-thin little hemispherical resonant gyro structures of assembly type is: the selection of material is polysilicon, with the method for low-pressure chemical vapor phase deposition (LPCVD), prepares the little semiglobe of polysilicon;
Described step (5) is: utilize cmp (CMP) to remove the structured material that the second silicon chip upper surface deposit obtains, thereby monocrystalline silicon is exposed to outer so that follow-up release spherical shell;
Described step (6) is: the spherical shell material is carried out annealing in process, and the internal stress that is produced when discharging in advance deposit or sputter structured material, these stress can allow spherical shell can't keep its shape when structure discharges, be usually expressed as film and roll.
Substantially the same manner as Example 2, difference is that the step (4) of the job operation of described three silica-based ultra-thin little hemispherical resonant gyro structures of assembly type is: the selection of material is silicon nitride, with the method for low-pressure chemical vapor phase deposition (LPCVD), prepares the little semiglobe of polysilicon.
Substantially the same manner as Example 1, difference is that the step (4) of the job operation of described three silica-based ultra-thin little hemispherical resonant gyro structures of assembly type is: the selection of material is silicon dioxide, and the little hemisphere mould by the above-mentioned silicon of high-temperature thermal oxidation can obtain high-quality silica membrane.
Substantially the same manner as Example 1, difference is that the step (7) of the job operation of described three silica-based ultra-thin little hemispherical resonant gyro structures of assembly type is: select the TMAH wet etching, discharge spherical shell structure.
Principle of work: each wafer of little hemispherical resonant gyro is to utilize Flip Chip (Flip chip, namely fall brilliant package method) assemble, its alignment error can accurately be controlled at below 1 micron, and because drive electrode is integrated on the same silicon chip with little hemispherical Shell, therefore only need once fall brilliant method with two silicon chip assemblings at detecting electrode and little hemispherical Shell place, carry out again finally Vacuum Package and get final product.
Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle, can also make some improvements and modifications, these improvements and modifications also should be considered as protection domain of the present utility model.In the present embodiment not clear and definite each ingredient all available prior art realized.
Claims (6)
1. silica-based ultra-thin little hemispherical resonant gyro of three assembly types, it is characterized in that: comprise the first silicon chip, the second silicon chip, the 3rd silicon chip, little hemispherical Shell, drive electrode and detecting electrode, described the first silicon chip is located at the top of the second silicon chip, the below that the 3rd silicon chip is located at the second silicon chip, described little hemispherical Shell is located between the first silicon chip and the second silicon chip, be fixedly connected with the second silicon chip at the bottom of little hemispherical Shell shell, little hemispherical Shell coboundary contacts with the lower surface of the first silicon chip; Described drive electrode is located between the first silicon chip and the 3rd silicon chip, the periphery of little hemispherical Shell, and drive electrode one end is fixedly connected with the 3rd silicon chip, and the other end passes the second silicon chip and the first silicon chip is flexibly connected; Described detecting electrode one end is fixedly connected with the first silicon chip, and the other end and little hemispherical Shell inwall are flexibly connected.
2. the silica-based ultra-thin little hemispherical resonant gyro of three assembly types as claimed in claim 1, it is characterized in that: described little hemispherical Shell diameter is the 1-3 millimeter, and thickness is the 5-15 micron.
3. the silica-based ultra-thin little hemispherical resonant gyro of three assembly types as claimed in claim 1 is characterized in that: on described the first silicon chip and one side relative to the second silicon chip be provided with Nano getter.
4. the silica-based ultra-thin little hemispherical resonant gyro of three assembly types as claimed in claim 1 is characterized in that: described drive electrode is 4n, and wherein n is the integer more than or equal to 1.
5. the silica-based ultra-thin little hemispherical resonant gyro of three assembly types as described in claim 1-4 any one, it is characterized in that: described the first silicon chip is provided with the jack corresponding with drive electrode, and described jack is located at the periphery of detecting electrode.
6. the silica-based ultra-thin little hemispherical resonant gyro of three assembly types as described in claim 1-4 any one, it is characterized in that: described the second silicon chip is provided with the through hole corresponding with drive electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320260275XU CN203298772U (en) | 2013-05-14 | 2013-05-14 | Three-chip assembled type silica-based ultrathin micro semisphere resonance gyroscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320260275XU CN203298772U (en) | 2013-05-14 | 2013-05-14 | Three-chip assembled type silica-based ultrathin micro semisphere resonance gyroscope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203298772U true CN203298772U (en) | 2013-11-20 |
Family
ID=49574777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320260275XU Expired - Fee Related CN203298772U (en) | 2013-05-14 | 2013-05-14 | Three-chip assembled type silica-based ultrathin micro semisphere resonance gyroscope |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203298772U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103398707A (en) * | 2013-05-14 | 2013-11-20 | 东南大学 | Three chips assembled silicon-based ultrathin micro-hemispherical resonator gyroscope and making method thereof |
| CN105466408A (en) * | 2015-07-21 | 2016-04-06 | 东南大学 | Triaxial stereo football-shaped micro-gyroscope and processing method thereof |
| CN108489476A (en) * | 2018-02-11 | 2018-09-04 | 东南大学 | A kind of photoacoustic waves gyroscope and its processing method based on acoustic-optio coupling effect |
| CN113514082A (en) * | 2021-07-14 | 2021-10-19 | 中国人民解放军国防科技大学 | Assembly fixture, assembly system and assembly method for micro-hemispherical resonant gyroscope structure |
-
2013
- 2013-05-14 CN CN201320260275XU patent/CN203298772U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103398707A (en) * | 2013-05-14 | 2013-11-20 | 东南大学 | Three chips assembled silicon-based ultrathin micro-hemispherical resonator gyroscope and making method thereof |
| CN103398707B (en) * | 2013-05-14 | 2015-11-18 | 东南大学 | A kind of three silica-based super-thin micro-hemispherical resonator gyroscope of assembly type and preparation method thereof |
| CN105466408A (en) * | 2015-07-21 | 2016-04-06 | 东南大学 | Triaxial stereo football-shaped micro-gyroscope and processing method thereof |
| CN105466408B (en) * | 2015-07-21 | 2017-12-22 | 东南大学 | Three axle solid football shaped gyroscopes and its processing method |
| CN108489476A (en) * | 2018-02-11 | 2018-09-04 | 东南大学 | A kind of photoacoustic waves gyroscope and its processing method based on acoustic-optio coupling effect |
| CN108489476B (en) * | 2018-02-11 | 2021-07-09 | 东南大学 | Photoacoustic wave gyroscope based on acousto-optic coupling effect and processing method thereof |
| CN113514082A (en) * | 2021-07-14 | 2021-10-19 | 中国人民解放军国防科技大学 | Assembly fixture, assembly system and assembly method for micro-hemispherical resonant gyroscope structure |
| CN113514082B (en) * | 2021-07-14 | 2022-07-12 | 中国人民解放军国防科技大学 | Assembly fixture, assembly system and assembly method for micro-hemispherical resonant gyroscope structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103322994B (en) | Silica-based super-thin micro-hemispherical resonator gyroscope of a kind of biplate integrated form and preparation method thereof | |
| CN103528576B (en) | Hemispherical resonance micro mechanical gyroscope and processing technology thereof | |
| CN203298772U (en) | Three-chip assembled type silica-based ultrathin micro semisphere resonance gyroscope | |
| CN102205941A (en) | Micro electro mechanical system (MEMS) process-based micro atomic cavity device air tightness package and method | |
| CN103398707B (en) | A kind of three silica-based super-thin micro-hemispherical resonator gyroscope of assembly type and preparation method thereof | |
| US11703330B2 (en) | Fused quartz dual shell resonator and method of fabrication | |
| US20180188030A1 (en) | Micro three-dimensional shell resonator gyroscope | |
| CN104197909B (en) | A kind of pair of semiglobe miniature resonant gyroscope and preparation method thereof | |
| CN203310419U (en) | Two-chip integrated silicon-based ultrathin micro-hemispherical resonator gyroscope | |
| CN107063220B (en) | Micro-hemispherical resonator gyroscope based on SOI packaging and processing method thereof | |
| CN107063224B (en) | SOI micro-hemispherical gyroscope sensitive structure | |
| CN104197910B (en) | Micro hemispherical resonator gyro instrument based on micro- ball and preparation method thereof | |
| CN102509844A (en) | Micro-electromechanical disc resonator and manufacturing method thereof | |
| CN104215236B (en) | A kind of anti-phase vibratory gyroscope of MEMS and manufacturing process thereof | |
| Tang et al. | Process development of an all-silicon capacitive accelerometer with a highly symmetrical spring-mass structure etched in TMAH+ Triton-X-100 | |
| Wen et al. | Wafer-level-packaged HARPSS+ MEMS platform: Integration of robust timing and inertial measurement units (TIMU) on a single chip | |
| CN104197918B (en) | Semi-circular piezoelectric resonator gyroscope and preparation method thereof | |
| CN104197920B (en) | The hemispherical resonator microthrust test of up/down perforation support | |
| CN104197919B (en) | The glass metal hemispherical resonator microthrust test of up/down perforation support | |
| CN104897146A (en) | Out-plane piezoelectric type hemispheric micro-gyroscope and preparation method thereof | |
| CN107560607A (en) | Gyroscope based on semi circular shells harmonic oscillator and preparation method thereof | |
| CN107389050B (en) | Micro-hemispherical resonator gyroscope with accurately controlled inner and outer electrode gaps and processing method thereof | |
| CN104197914B (en) | Miniature blow-molding semispherical resonator gyroscope and preparation method thereof | |
| CN104197908B (en) | Recessed annular piezoelectric resonator gyroscope and preparation method thereof | |
| CN105628013B (en) | A kind of assembly type hemispherical resonator gyroscope and its processing technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131120 Termination date: 20150514 |
|
| EXPY | Termination of patent right or utility model |