CN105466405A - Hybrid hemispherical resonator micro-gyro and machining process thereof - Google Patents
Hybrid hemispherical resonator micro-gyro and machining process thereof Download PDFInfo
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- CN105466405A CN105466405A CN201610008727.3A CN201610008727A CN105466405A CN 105466405 A CN105466405 A CN 105466405A CN 201610008727 A CN201610008727 A CN 201610008727A CN 105466405 A CN105466405 A CN 105466405A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
Abstract
The invention discloses a hybrid hemispherical resonator micro-gyro, and belongs to the field of micro-electro-mechanical systems and inertial navigation. The hybrid hemispherical resonator micro-gyro is composed of an upper-layer glass substrate, an electrode layer, a silicon structure layer and a lower-layer glass substrate which are arranged in sequence from top to bottom. A round cavity is formed in the center of the upper-layer glass substrate, the center of the electrode layer and the center of silicon structure layer, and a hemispherical shell harmonic oscillator is arranged in the round cavity and fixed to the silicon structure layer through a supporting handle. The electrode layer comprises an electrode and a peripheral anchor point structure used in cooperation with the electrode, and the upper-layer glass substrate is provided with an electrode hole used in cooperation with the electrode, and small bonding pads evenly distributed at the edge of the upper-layer glass substrate and connected with the electrode hole in the upper-layer glass substrate through metal leads respectively. The invention further discloses a machining process of the hybrid hemispherical resonator micro-gyro. According to the micro-gyro, vacuum encapsulation is completed when anodic bonding is carried out on the structure layer and the glass substrates, so that process steps are reduced; according to the machining process, machining cost is reduced.
Description
Technical field
The invention belongs to micro electronmechanical and inertial navigation field, be specifically related to a kind of hybrid hemispherical resonator gyroscope and processing technology thereof.
Background technology
Dome-type resonator gyroscope is a kind of Ge Shi gyrotron, it not only has the advantages such as higher precision, resolution, reliability and capability of resistance to radiation, and being acknowledged as the longest gyroscope in current serviceable life, it can continuous working more than 15 years retention not change.In addition, its advantage shown in the application of space field is that other gyros are incomparable.
The U.S. is the country developing hemispherical reso nance gyroscope the earliest, within 1956, applies for first and obtains the patent of invention of hemispherical reso nance gyroscope.Traditional hemispherical reso nance gyroscope is processed by fused quartz, and difficulty of processing is large, and cost is higher, and the volume of gyro is comparatively large, has had a strong impact on the widespread use of gyro, is also difficult to realize microminiaturization.In these years, along with space travel task long life, complicated day by day, improving constantly of MEMS technology and electronics level, and the advantage that hemispherical reso nance gyroscope shows, make hemispherical reso nance gyroscope become the study hotspot of these field scientific research institutions both at home and abroad.It is little that the micro-hemispherical reso nance gyroscope utilizing MEMS technology to be made has volume, and cost is low, and power consumption is little, the advantage such as to can be mass, be with a wide range of applications.But because China starts late to the research of hemispherical reso nance gyroscope, and micro-processing technology level is lower, and external process technology also has a certain distance.
Summary of the invention
Goal of the invention: the object of the present invention is to provide a kind of hybrid hemispherical resonator gyroscope, simple and compact for structure; Another object of the present invention is to the processing technology that hybrid hemispherical resonator gyroscope is provided, in the impregnable situation of the performance of gyro, the processing technology simplified as far as possible.
Technical scheme: for achieving the above object, the present invention adopts following technical scheme:
A kind of hybrid hemispherical resonator gyroscope, comprises the upper strata glass substrate, electrode layer, silicon structural layer and the lower floor's glass substrate that from top to bottom set gradually; Wherein, be provided with circular cavity at the center of upper strata glass substrate, electrode layer and silicon structural layer, hemispherical Shell harmonic oscillator is arranged in circular cavity; Described hemispherical Shell harmonic oscillator is fixed in silicon structural layer by support shank; Described electrode layer comprise with the use of electrode and peripheral anchor point structure, the electrode hole and little pad that coordinate electrode to use is provided with in described upper strata glass substrate, little pad is distributed on the edge of upper strata glass substrate, little pad is connected with the electrode hole in the glass substrate of upper strata respectively by metal lead wire, wherein, electrode, little pad and electrode hole are 16 respectively, and one_to_one corresponding is arranged; The electrode hole that one is used for applying hemispherical Shell harmonic oscillator reference voltage is provided with in described lower floor's glass substrate, circular bond district is provided with at the center of described lower floor's glass substrate, this circular bond district is connected with the electrode hole in lower floor glass substrate by metal lead wire, this electrode hole is connected with large bonding pad, and large bonding pad is arranged on the bottom surface of lower floor's glass substrate.
The bottom of described hemispherical Shell harmonic oscillator is connected with support shank, and the bottom of support shank is connected by the circular bond district of silicon-glass anode linkage with lower floor's glass substrate center, and the sidewall of support shank is connected with the center pit bottom silicon structural layer.
Described little pad is square, and large bonding pad is square metal pad; Described upper strata glass substrate and lower floor's glass substrate are square, and electrode hole is taper.
The diameter of described hemispherical Shell harmonic oscillator is 1200 ~ 1500 μm, and thickness is 1 ~ 5 μm, and the gap between hemispherical Shell harmonic oscillator and electrode is 5 ~ 20 μm; The gyrostatic overall dimensions of hemispherical Shell is 3000 μm × 3000 μm × 1200 μm.
Described electrode layer is made by the polysilicon of LPCVD deposition boron-doping, and electrode is by forming electrode layer etching.
A processing technology for hybrid hemispherical resonator gyroscope, comprises the following steps:
1) hemispherical Shell harmonic oscillator model is prepared
Cleaning silicon wafer, and utilize CMP silicon wafer to be thinned to the thickness of specifying, at silicon wafer surface heat growth SiO
2as mask layer, coating photoresist, photoetching, uses HF to etch SiO
2, circular open is come out and obtains silicon chip; Use SF
6plasma isotropic etching silicon chip, forms dome-type groove in silicon chip central area, obtains hemispherical Shell harmonic oscillator model;
2) hemispherical Shell harmonic oscillator and electrode layer is formed
In the photoetching of silicon chip bottom surface, utilize ICP technique to etch round center hole, make center pit penetrate silicon wafer to manufacture support shank; Photoetching on silicon chip, ICP etching, form slot electrode, remove photoresist and SiO
2; Heat growth silicon dioxide on silicon chip, on silica LPCVD polysilicon, doping, annealing, forms hemispherical Shell and electrode layer;
3) electrode is formed
Resist coating on the polysilicon, utilizes ICP technique etch polysilicon, forms electrode, just can obtain the electrode of separation after electrode layer has etched, and removes photoresist; Heat growth SiO on the polysilicon
2as mask layer, resist coating exposure, development, use HF to etch the SiO at capacitance gap place
2; Use DRIESF
6/ XeF
2isotropic etching, etches away the silicon between electrode and hemispherical Shell harmonic oscillator, first removes photoresist, then remove SiO
2;
4) circular cavity and electrode hole is formed
Glass substrate bottom surface, upper strata sputtering Cr/Au or Ti/Au or TiW/Au layer as mask, resist coating, exposure, development, with glass substrate bottom surface, wet etching upper strata, form circular groove, this circular groove matching step 3) etching electrode layer and the space that obtains of silicon structural layer, form circular cavity together after combination, remove photoresist and mask layer; On the glass substrate of upper strata, sputter Cr/Au or Ti/Au or TiW/Au layer as mask, resist coating, exposure, development, wet etching, wear until carve, form electrode hole;
5) prepare pad, connection metal goes between
At glass substrate front, upper strata resist coating, exposure, development, wet etching, form square pads groove and signal lead groove, remove photoresist and Cr/Au mask layer; In the glass substrate of upper strata, resist coating, exposure, development, splash-proofing sputtering metal chromium and gold, form little pad and metal lead wire;
In lower floor's glass substrate, double-faced sputter Cr/Au or Ti/Au or TiW/Au layer are as mask, resist coating, exposure, development, wet etching lower floor glass substrate front, form circular bond district and wire lead slot; At lower floor's glass substrate coated on bottom side photoresist, exposure, development, wet etching, wear until carve, form electrode lead hole; Remove the photoresist in lower floor's glass substrate and Cr/Au mask, the exposure of coating photoresist, development, double-faced sputter crome metal and gold, form metallic bonding district, metal lead wire and large bonding pad;
6) assembled package
Lower floor's glass substrate of structural sheet silicon wafer and metal lead wire is carried out silicon-glass anodic bonding; Use HF supercritical drying etching SiO
2, releasing structure, to avoid adhesion; Structural sheet crystal silicon disk and upper strata glass substrate are carried out silicon-glass anodic bonding, and carries out Vacuum Package.
Step 2) in, the slot electrode of etching radially defines at silicon chip and is more than one; With the adhesion of intensifier electrode layer and structural sheet, prevent from coming off.In step 5), the etching depth of slot electrode can adjust, and makes the height adjustable of electrode.
Step 2) in, described hemispherical Shell harmonic oscillator and electrode layer are all made by the polysilicon of LPCVD deposition boron-doping; Avoid hemispherical Shell harmonic oscillator and electrode layer deposits at twice, decrease processing step, reduce processing cost.
In step 4), depositing nano getter in described circular groove; To ensure the vacuum tightness of Vacuum Package.
Beneficial effect: compared with prior art, the hybrid hemispherical resonator gyroscope of one of the present invention, by adding upper and lower layer glass substrate, provides pad and metal lead wire, for the extraction applying reference voltage and signal provides conveniently; Complete Vacuum Package while structural sheet and glass substrate are carried out anode linkage, decrease processing step; The processing technology of a kind of hybrid hemispherical resonator gyroscope of the present invention, by with the hemispherical Shell harmonic oscillator of support shank and electrode layer be by while LPCVD deposit spathic silicon make, avoid hemispherical Shell and electrode layer deposits at twice, decrease processing step, reduce processing cost.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of hybrid hemispherical resonator gyroscope;
Fig. 2 is a kind of vertical view of hybrid hemispherical resonator gyroscope;
Fig. 3 is the cut-open view of Fig. 2 along A-A face;
Fig. 4 is a kind of processing process figure of hybrid hemispherical resonator gyroscope.
Embodiment
Below in conjunction with the drawings and specific embodiments, technical solution of the present invention is described in detail, but protection scope of the present invention is not limited to described embodiment.
As Figure 1-3, a kind of hybrid hemispherical resonator gyroscope, comprises hemispherical Shell harmonic oscillator 1, silicon structural layer 2, electrode layer 3, upper strata glass substrate 4, lower floor's glass substrate 5, electrode 6, peripheral anchor point structure 7, support shank 8, electrode hole 9, little pad 10, circular bond district 11, large bonding pad 12, metal lead wire 13 and circular cavity 14.The material of upper strata glass substrate 4 and lower floor's glass substrate 5 is PYREX7740.
Hemispherical Shell harmonic oscillator 1 is fixed in silicon structural layer 2 by support shank 8, electrode layer 3 comprise with the use of electrode 6 and peripheral anchor point structure 7, electrode 6 is 16, and electrode 6 is uniformly distributed around the circumference of hemispherical Shell 1; ?
There is the electrode hole 9 that 16 corresponding with even distribution type electrode in upper strata glass substrate 4, for applying driving force and realizing the transmission of signals such as detecting, orthogonal, lower floor's glass substrate 5 is provided with the electrode hole 9 that is used for applying hemispherical Shell 1 reference voltage.Be provided with circular cavity 14 at the center of upper strata glass substrate 4, electrode layer 3 and silicon structural layer 2, hemispherical Shell harmonic oscillator 1 is arranged in circular cavity 14; Circular cavity 14 is by the circular groove matching step 3 in the glass substrate of upper strata) etching electrode layer 3 and the space that obtains of silicon structural layer 2, form circular cavity 14 together by assembled package; Silicon structural layer 2, electrode layer 3 and hemispherical Shell harmonic oscillator 1 all belong to structural sheet, and circular groove etches to form in upper strata glass substrate 4, mainly avoids hemispherical Shell harmonic oscillator and glass substrate to collide.
The bottom of hemispherical Shell harmonic oscillator 1 is connected with support shank 8, be connected with the circular bond district 11 of lower floor's glass substrate 5 center by silicon-bond glass bottom support shank 8, the sidewall of support shank 8 is connected with the center pit bottom silicon structural layer 2, and hemispherical Shell harmonic oscillator 1 is fixed in silicon structural layer 2.
On upper strata glass substrate 4, be provided with little pad 10, little pad 10 is square, and little pad 10 is 16, and little pad 10 is for being distributed on foursquare four limits, and each little pad 10 is connected with the electrode hole 9 in corresponding upper strata glass substrate 4 by metal lead wire 13; The centre bit in lower floor's glass substrate 5 front is equipped with circular bond district 11, and circular bond district 11 is connected with electrode hole 9 by metal lead wire 13, and electrode hole 9 is connected with the large bonding pad 12 at its back side, and large bonding pad 12 is square metal pad.Upper strata glass substrate 4 and lower floor's glass substrate 5 are square, and electrode hole 9 is taper.
Electrode layer 3 is made by the polysilicon of LPCVD deposition boron-doping, and 16 equally distributed electrodes 6 are by forming electrode layer 3 etching.LPCVD deposition is low-pressure chemical vapor deposition.The diameter of hemispherical Shell harmonic oscillator 1 is 1200 ~ 1500 μm, and thickness is 1 ~ 5 μm, and the gap between hemispherical Shell harmonic oscillator 1 and electrode 6 is 5 ~ 20 μm; The gyrostatic overall dimensions of hemispherical Shell is 3000 μm × 3000 μm × 1200 μm.
As shown in figure (4), the corresponding following step 1)-11 of Fig. 4 (a) ~ Fig. 4 (k)).CMP is chemically mechanical polishing, and ICP technique is inductively coupled plasma etching, and HF is light fluorine acid, and HF supercritical drying is exactly gasified by HF, then etches.
A processing technology for hybrid hemispherical resonator gyroscope, comprises the following steps:
1) clean silicon wafer, and utilize CMP silicon wafer to be thinned to the thickness of specifying, to make structural sheet;
2) at structural sheet silicon face heat growth SiO
2as mask layer, photoetching also etches SiO
2, at central area opening, use SF
6plasma isotropic etching silicon chip, forms dome-type groove;
3) in silicon chip back side photoetching, utilize ICP technique to etch round center hole, make center pit penetrate silicon chip QUOTE so that make support shank;
4) in front side of silicon wafer photoetching, ICP etching, form slot electrode, remove photoresist and SiO
2;
5) at front side of silicon wafer heat growth silicon dioxide, LPCVD polysilicon, doping, annealing, form hemispherical Shell and electrode layer, photoetching also etches electrode layer, forms electrode;
6) at front side of silicon wafer heat growth SiO
2as mask layer, photoetching also etches SiO
2, at capacitance gap place opening, use DRIESF
6/ XeF
2isotropic etching, etches away the silicon between electrode and hemispherical Shell;
7) in upper strata glass substrate reverse side photoetching and wet etching upper strata glass substrate reverse side, form circular groove, in front photoetching and wet etching, form electrode hole through hole, gluing again, photoetching wet etching, form square pads groove and signal lead groove;
8) in the front photoetching of lower floor's PYREX7740 substrate of glass and wet etching, form circular bond district and wire lead slot, in reverse side photoetching and wet etching, form electrode through hole;
9) splash-proofing sputtering metal chromium (Cr) and gold (Au) in upper and lower layer glass substrate, form metallic bonding district, signal lead and pad;
10) structural sheet silicon wafer and the lower floor's substrate of glass with metal electrode and lead-in wire are carried out silicon-glass anodic bonding, and use HF to etch SiO
2, releasing structure;
11) structural sheet crystal silicon disk and upper strata glass substrate are carried out silicon-glass anode linkage, and carry out Vacuum Package.
In step 4), radially can define and etch more than one slot electrode, with the adhesion of intensifier electrode layer and structural sheet, preventing from coming off.In step 4), the etching depth of slot electrode can adjust, and makes the height adjustable of electrode 6.In step 5), be that the polysilicon depositing boron-doping by LPCVD is made with the hemispherical Shell harmonic oscillator 1 of support shank 8 and electrode layer 3, avoid hemispherical Shell 1 and electrode layer 3 deposits at twice, decrease processing step, reduce processing cost.In step 7), can in the circular groove 14 made depositing nano getter, to ensure the vacuum tightness of Vacuum Package.
Claims (9)
1. a hybrid hemispherical resonator gyroscope, is characterized in that: comprise the upper strata glass substrate (4), electrode layer (3), silicon structural layer (2) and the lower floor's glass substrate (5) that from top to bottom set gradually; Wherein, be provided with circular cavity (14) at the center of upper strata glass substrate (4), electrode layer (3) and silicon structural layer (2), hemispherical Shell harmonic oscillator (1) is arranged in circular cavity (14); Described hemispherical Shell harmonic oscillator (1) is fixed in silicon structural layer (2) by support shank (8); Described electrode layer (3) comprise with the use of electrode (6) and peripheral anchor point structure (7), the electrode hole (9) and little pad (10) that coordinate electrode (6) to use is provided with in described upper strata glass substrate (4), little pad (10) is distributed on the edge of upper strata glass substrate (4), little pad (10) is connected with the electrode hole (9) in upper strata glass substrate (4) respectively by metal lead wire (13), wherein, electrode (6), little pad (10) and electrode hole (9) are 16 respectively, and one_to_one corresponding is arranged; The electrode hole (9) that one is used for applying hemispherical Shell harmonic oscillator (1) reference voltage is provided with in described lower floor's glass substrate (5), circular bond district (11) is provided with at the center of described lower floor's glass substrate (5), this circular bond district (11) is connected with the electrode hole (9) in lower floor's glass substrate (5) by metal lead wire (13), this electrode hole (9) is connected with large bonding pad (12), and large bonding pad (12) is arranged on the bottom surface of lower floor's glass substrate (5).
2. the hybrid hemispherical resonator gyroscope of one according to claim 1, it is characterized in that: the bottom of described hemispherical Shell harmonic oscillator (1) is connected with support shank (8), the bottom of support shank (8) is connected with the circular bond district (11) of lower floor glass substrate (5) center by silicon-bond glass, and the sidewall of support shank (8) is connected with the center pit bottom silicon structural layer (2).
3. the hybrid hemispherical resonator gyroscope of one according to claim 1, is characterized in that: described little pad (10) is for square, and large bonding pad (12) is square metal pad; Described upper strata glass substrate (4) and lower floor's glass substrate (5) are square, and electrode hole (9) is taper.
4. the hybrid hemispherical resonator gyroscope of one according to claim 1, it is characterized in that: the diameter of described hemispherical Shell harmonic oscillator (1) is 1200 ~ 1500 μm, thickness is 1 ~ 5 μm, and the gap between hemispherical Shell harmonic oscillator (1) and electrode (6) is 5 ~ 20 μm; The gyrostatic overall dimensions of hemispherical Shell is 3000 μm × 3000 μm × 1200 μm.
5. the hybrid hemispherical resonator gyroscope of one according to claim 1, is characterized in that: described electrode layer (3) is made by the polysilicon of LPCVD deposition boron-doping, and electrode (6) is by forming electrode layer (3) etching.
6. the processing technology of a kind of hybrid hemispherical resonator gyroscope in claim 1 ~ 5 described in any one, is characterized in that: comprise the following steps:
1) hemispherical Shell harmonic oscillator model is prepared
Cleaning silicon wafer, and utilize CMP silicon wafer to be thinned to the thickness of specifying, at silicon wafer surface heat growth SiO
2as mask layer, coating photoresist, photoetching, uses HF to etch SiO
2, circular open is come out and obtains silicon chip; Use SF
6plasma isotropic etching silicon chip, forms dome-type groove in silicon chip central area, obtains hemispherical Shell harmonic oscillator model;
2) hemispherical Shell harmonic oscillator and electrode layer is formed
In the photoetching of silicon chip bottom surface, utilize ICP technique to etch round center hole, make center pit penetrate silicon wafer to manufacture support shank; Photoetching on silicon chip, ICP etching, form slot electrode, remove photoresist and SiO
2; Heat growth silicon dioxide on silicon chip, on silica LPCVD polysilicon, doping, annealing, forms hemispherical Shell and electrode layer;
3) electrode is formed
Resist coating on the polysilicon, utilizes ICP technique etch polysilicon, forms electrode, just can obtain the electrode of separation after electrode layer has etched, and removes photoresist; Heat growth SiO on the polysilicon
2as mask layer, resist coating exposure, development, use HF to etch the SiO at capacitance gap place
2; Use DRIESF
6/ XeF
2isotropic etching, etches away the silicon between electrode and hemispherical Shell harmonic oscillator, first removes photoresist, then remove SiO
2;
4) circular cavity and electrode hole is formed
Glass substrate bottom surface, upper strata sputtering Cr/Au or Ti/Au or TiW/Au layer as mask, resist coating, exposure, development, with glass substrate bottom surface, wet etching upper strata, form circular groove, this circular groove matching step 3) etching electrode layer and the space that obtains of silicon structural layer, form circular cavity together after combination, remove photoresist and mask layer; On the glass substrate of upper strata, sputter Cr/Au or Ti/Au or TiW/Au layer as mask, resist coating, exposure, development, wet etching, wear until carve, form electrode hole;
5) prepare pad, connection metal goes between
At glass substrate front, upper strata resist coating, exposure, development, wet etching, form square pads groove and signal lead groove, remove photoresist and Cr/Au mask layer; In the glass substrate of upper strata, resist coating, exposure, development, splash-proofing sputtering metal chromium and gold, form little pad and metal lead wire;
In lower floor's glass substrate, double-faced sputter Cr/Au or Ti/Au or TiW/Au layer are as mask, resist coating, exposure, development, wet etching lower floor glass substrate front, form circular bond district and wire lead slot; At lower floor's glass substrate coated on bottom side photoresist, exposure, development, wet etching, wear until carve, form electrode lead hole; Remove the photoresist in lower floor's glass substrate and Cr/Au mask, the exposure of coating photoresist, development, double-faced sputter crome metal and gold, form metallic bonding district, metal lead wire and large bonding pad;
6) assembled package
Lower floor's glass substrate of structural sheet silicon wafer and metal lead wire is carried out silicon-glass anodic bonding; Use HF supercritical drying etching SiO
2, releasing structure, to avoid adhesion; Structural sheet crystal silicon disk and upper strata glass substrate are carried out silicon-glass anodic bonding, and carries out Vacuum Package.
7. the processing technology of a kind of hybrid hemispherical resonator gyroscope according to claim 6, is characterized in that: step 2) in, the slot electrode of etching radially defines at silicon chip and is more than one.
8. the processing technology of a kind of hybrid hemispherical resonator gyroscope according to claim 6, is characterized in that: step 2) in, described hemispherical Shell harmonic oscillator and electrode layer are all made by the polysilicon of LPCVD deposition boron-doping.
9. the processing technology of a kind of hybrid hemispherical resonator gyroscope according to claim 6, is characterized in that: in step 4), depositing nano getter in described circular groove.
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| CN106556386A (en) * | 2016-11-15 | 2017-04-05 | 东南大学 | Micro- case resonant device of silicon substrate and preparation method thereof |
| CN107063220A (en) * | 2017-04-05 | 2017-08-18 | 东南大学 | A kind of micro- hemispherical resonant gyro and its processing method based on SOI encapsulation |
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| CN109186574A (en) * | 2018-09-20 | 2019-01-11 | 北方电子研究院安徽有限公司 | A kind of micro hemispherical resonator gyro |
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