CN106556386B - Micro- case resonant device of silicon substrate and preparation method thereof - Google Patents
Micro- case resonant device of silicon substrate and preparation method thereof Download PDFInfo
- Publication number
- CN106556386B CN106556386B CN201611030181.8A CN201611030181A CN106556386B CN 106556386 B CN106556386 B CN 106556386B CN 201611030181 A CN201611030181 A CN 201611030181A CN 106556386 B CN106556386 B CN 106556386B
- Authority
- CN
- China
- Prior art keywords
- micro
- layer
- case resonant
- chemical vapor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/567—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
- G01C19/5691—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially three-dimensional vibrators, e.g. wine glass-type vibrators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Gyroscopes (AREA)
- Micromachines (AREA)
Abstract
The invention discloses micro- case resonant device of a kind of silicon substrate and preparation method thereof, the micro- case resonant device of the silicon substrate includes micro- case resonant；One substrate with multiple driving detecting electrodes；Micro- case resonant is made of housing parts, plate shell parts and pillar；The plate shell parts of micro- case resonant nearby have slot close to pillar；The substrate is made of two layers of highly conductive silicon substrate, has layer of oxide layer to be electrically isolated among two layers of highly conductive silicon substrate, there is multiple driving detecting electrodes formed by doping in the highly conductive silicon substrate in upper layer；The multiple that the driving detecting electrode quantity is 4, including even number driving electrodes, even number detecting electrode；Micro- case resonant is electrically connected by pillar with connected realize of the highly conductive silicon substrate of lower layer.The sub- diameter dimension of micro- case resonant of the invention is in 100 μm of -4mm.The present invention can reduce the surface loss of harmonic oscillator, improve the Q value of harmonic oscillator.
Description
Technical field
The present invention relates to a kind of micro- case resonant devices of three-dimensional in the field microelectromechanical systems (MEMS), more particularly to one
Kind micro- case resonant device of silicon substrate and preparation method thereof.
Background technique
Brother's formula oscillation gyro is simple relative to optical gyroscope (such as ring laser gyro and optical fibre gyro) structure, and micro-
There is certain advantage in type.Brother's formula oscillation gyro according to structure can be divided into vibration beam type, tuning-fork type, case type, vibration it is board-like
Traditional macro-mechanical processing can be used Deng, core component, MEMS technology processing can also be used.Case resonant gyro is according to knot
Structure can be divided into hemisphere, ring, cylinder and other shell forms, and wherein hemispherical reso nance gyroscope is as the most successful in brother's formula oscillation gyro
A kind of high-performance gyro, be successfully applied to the spacecrafts such as Hubble Telescope, satellite, spaceship.
Recent decades MEMS technology is fast-developing, and the micromation of brother's formula oscillation gyro is also rapidly developed and is widely applied
In fields such as Industry Control, automobile, consumer electronics, military affairs, the micromechanical gyro of low precision be widely used in consumer electronics and
Auto navigation etc. is to the lower occasion of performance requirement.The micromechanical gyro of medium accuracy can be applied to military robot, military nothing
The fields such as posture heading reference system (AHRS) of man-machine, tactical missile, smart bombs, aircraft, the at present microcomputer of medium accuracy
Market is most widely used in tool gyro, comprehensive performance is up to quartz tuning-fork and declines mechanical gyro.
Case resonant gyro is as the higher a kind of gyro of performance in brother's formula oscillation gyro, and the process of micromation is relatively
Slowly, this is primarily limited to the characteristics of MEMS technology and development, and the one of MEMS technology is characterized in greatly surface silicon-based technology, three-dimensional MEMS
Technical costs is high and precision is lower.The restriction of hemispherical resonator and Cylinder shell resonator in case resonant gyro due to preparation process
So far do not occur that model machine is more successfully miniaturized.And relatively these two types of case resonant gyros, micro-loop shape oscillation gyro are ground
Study carefully then more extensively.To obtain high-performance computer tool oscillation gyro, Boeing began one's study plate-like resonant gyroscope from 2005
(DRG), " Boeing Disc Resonator Gyroscope " is reported in PLANS meeting in 2014, Boeing
DRG uses multilayer loop and central disk-shaped anchoring area designs.
Hemispherical reso nance gyroscope superior performance in case resonant gyro, although French Sagan Safety Protection Co., Ltd is Chinese special
Benefit " resonator with part metal cladding " (patent No.: ZL2010800507158) and United States Patent (USP) " GYROSCOPIC
SENSOR AND METHOD FOR MANUFACUTRING SUCH A SENSOR " (patent No.: US9068833) is proposed and is adopted
The electrode being axially moved with measurement, device volume become smaller, and assembling difficulty reduces, but macro-mechanical processing is at high cost.To reduce
Cost and volume, researcher begin to focus on the micromation of the micromation of case resonant gyro, especially hemispherical reso nance gyroscope.And
Micro- case resonant device determines the performance of micro- case resonant gyro as the core in MEMS case resonant gyro.
To realize the micro- case resonant gyro of high-performance, in Chinese patent, " a kind of biplate integrated form silicon substrate is ultra-thin for Southeast China University
Micro- hemispherical resonant gyro and preparation method thereof " (patent No.: ZL2013101769365) and " a kind of three pieces assembly type silicon substrate is super
It is proposed in thin micro- hemispherical resonant gyro and preparation method thereof " (patent No.: ZL2013101770080) and utilizes SF6Respectively to same
Property dry etching prepare half spherical cavity, but this dry etch process preparation cavity surface roughness degree it is very high, in electrode and resonance
It is easy to produce error during subgroup dress, and the capacitor between its electrode and harmonic oscillator is relatively small.Northwestern Polytechnical University is in
It proposes in state's patent " micro hemispherical resonator gyro and preparation method thereof " (patent No.: ZL 2013100221461) using each to same
Property dry etching prepare half spherical cavity, the equally cavity surface roughness degree using the preparation of this technique is very high, influences then to deposit
The surface roughness of polysilicon harmonic oscillator brings biggish surface loss, and the capacitor between the electrode prepared and harmonic oscillator
It is relatively small.Northrop Ge Lumen company, the U.S. is at United States Patent (USP) " MICRO HEMISPHERIC RESONATOR GYRO "
The low stress SiNx preparation of plasma enhanced chemical vapor deposition method (PECVD) deposition is proposed in (patent No.: US8109145)
Micro- hemispherical resonator, actual conditions are that the stress of PECVD silicon nitride or the silicon nitride of other deposition methods is big, particularly with system
The micro- hemispherical resonator of silicon nitride of standby 3mm diameter is very easy to break；Electrode is carved from the silicon substrate back side using deep reactive ion
Erosion (DRIE) is prepared, and this technique is easy to cause the area of each electrode and harmonic oscillator inconsistent, leads to capacitance size not
.
Realize that the key of the micro- case resonant gyro of high-performance is to realize the preparation of the micro- case resonant device of high-performance, specific table
The preparation of micro- case resonant of present high-performance, the preparation of electrode and assembling and three aspects of Vacuum Package.Micro- case resonant
Directly determine the performance of device；The preparation of electrode can be divided into two classes, one is with the standby molding of harmonic oscillator integration system, it is another
It is to be prepared separately then to assemble, the key of assembling is that the spacing of electrode and harmonic oscillator and area need to be consistent, such ability
Guarantee that electrode is consistent with the capacitance size of harmonic oscillator；The micro- case resonant gyro needs of high-performance work under high vacuum environment, because
This Vacuum Package becomes design and one of the committed step in preparation process, but the Vacuum Package vacuum degree under MEMS technology
It is lower, therefore the spacing between electrode and harmonic oscillator should be suitably increased in view of air damping (air damping) when design.Institute
There is consideration to be all based on and obtain the micro- case resonant device of high-performance, there are two mostly important in performance indicator, one is symmetry (tool
Body shows as Δ f), and one is energy loss (being embodied in Q value).
Summary of the invention
In view of the above shortcomings of the prior art, the object of the present invention is to provide a kind of micro- case resonant device of silicon substrate and its preparations
Method, to obtain the micro- case resonant device of high-performance.
To achieve the above object, the invention adopts the following technical scheme:
A kind of micro- case resonant device of silicon substrate, comprising:
One micro- case resonant；
One substrate with multiple driving detecting electrodes；
Wherein, micro- case resonant is made of housing parts, plate shell parts and pillar, housing parts and flat
Plate shell parts are connected, and plate shell parts are located at the bottom of housing parts, and the pillar is set in the bottom of plate shell parts
Heart position；The substrate is made of two layers of highly conductive silicon substrate, passes through one layer of oxidation of setting between two layers of highly conductive silicon substrate
Layer is electrically isolated, and multiple driving detecting electrodes are provided in the highly conductive silicon substrate in upper layer；The driving detecting electrode quantity is 4
Multiple, including even number driving electrodes, even number detecting electrode；Micro- case resonant is highly conductive by pillar and lower layer
Silicon substrate, which is connected, realizes electrical connection.
Further, the material of micro- case resonant be invar alloy, super Invar alloy, doping conductive diamond,
Adulterate conductive polycrystalline silicon, doping conductive silicon carbide, silica, the silica mixed with titanium dioxide, 63HfO2·37TiO2、
HfO2·WO3·Ta2O5、Al2O3·TiO2、55Ta2O5·45WO3、37Ta2O5·63WO3Or Al2O3One kind；Wherein, described
When the material of micro- case resonant is electrically non-conductive material, the surface of micro- case resonant is covered with or is partially covered with conductive metal
Layer；
Further, the sub- diameter range of micro- case resonant is 100 μm of -4mm；The thickness model of micro- case resonant
Enclose is 0.1 μm -10 μm；The diameter of the plate shell parts of micro- case resonant is not less than 50 μm.
Further, the plate shell parts of micro- case resonant are nearby provided with slot close to pillar；The depth of the slot
Degree is 1 μm -100 μm；The slot is multiple, and about pillar central symmetry.
A kind of preparation method of the micro- case resonant device of silicon substrate, its step are as follows:
Step 1, substrate of the preparation belt chamber with driving detecting electrode；
Step 2 prepares first layer sacrificial layer in above-mentioned intrabasement chamber surfaces to define micro- case resonant and electrode
Spacing；
Step 3, the first layer sacrificial layer by way of lithography and etching on above-mentioned intrabasement planar section are opened
Hole；
Step 4 prepares the structure sheaf of micro- case resonant in above-mentioned first layer sacrificial layer surface；
Step 5 prepares second layer sacrificial layer in subsequent job step on the structure sheaf of above-mentioned micro- case resonant
Protect micro- case resonant；
Step 6 removes first layer sacrificial layer in substrate, micro- case resonant by way of chemically mechanical polishing
The planar section of structure sheaf, second layer sacrificial layer；
Step 7, removes first layer sacrificial layer and second layer sacrificial layer discharges micro- case resonant；
Further, substrate of the belt chamber in step 1 with driving detecting electrode appointing by following two preparation method
It anticipates a kind of prepare；
The first the preparation method is as follows:
Lower layer's height is led silicon wafer and upper layer height leads<111>silicon wafer and bonds together to form substrate by step 11, and two layers of height leads silicon
Have layer of oxide layer between disk, the oxide layer in two layers of height lead before silicon wafer bonding processing lower layer's height lead silicon wafer or on
Layer height is led on<111>silicon wafer；
Step 12, the upper layer height in substrate lead the symmetrical chamber for forming that multiple bottoms are plane on<111>silicon wafer, institute
The method of use are as follows: method, every dry method same sex etching and the wet etching of wet etching, laser drill in conjunction with wet etching
In conjunction with method, micro spark process method, micro- Ultrasonic machining in conjunction with wet etching in the method in conjunction with wet etching
One kind；
Step 13 is reversely mixed on the surface that above-mentioned upper layer height leads<111>silicon wafer and on the curved surface of symmetrical chamber
It is miscellaneous, form multiple driving detecting electrodes；
Etching in above-mentioned symmetrical chamber bottom plane is formed slot and center post cavity by step 14, then removes bottom
Oxide layer in plane forms substrate of the belt chamber with driving detecting electrode；
Second the preparation method is as follows:
Step 21, on upper layer, height leads and forms multiple symmetrical chambers for penetrating silicon wafer, used side on<111>silicon wafer
Method are as follows: method, the every dry method same sex of wet etching, laser drill in conjunction with wet etching etch the side in conjunction with wet etching
One of the method for method, micro- Ultrasonic machining in conjunction with wet etching of method, micro spark processing in conjunction with wet etching；
Step 22 leads on silicon wafer etching in lower layer's height and forms slot and center post cavity；
Above-mentioned lower layer's height is led silicon wafer oxidation by step 23；
Above-mentioned upper layer height is led<111>silicon wafer and lower layer's height leads silicon wafer and bonds together to form substrate by step 24；
Step 25, on the surface that the upper layer height in above-mentioned substrate leads<111>silicon wafer and the curved surface of symmetrical cavity is enterprising
Row counter-doping forms multiple driving detecting electrodes；
Step 26, in the way of wet etching by the bottom plane of symmetrical chamber oxide layer and lower layer's height lead silicon circle
Oxide layer on the non-bonding face of on piece is removed, and substrate of the belt chamber with driving detecting electrode is obtained.
Further, in step 2, the preparation method of the first layer sacrificial layer is deposition, plating, spin coating, spraying, table
One kind of face tensammetry；The deposition includes physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD), atomic layer deposition
(ALD)；The physical vapour deposition (PVD) includes evaporation (Evaporation), sputtering (Sputtering), ion plating (Ion
Plating), ion beam depositing (IBD), ion beam assisted depositing (IBAD)；The chemical vapor deposition includes thermal chemical vapor
Deposit (TCVD), low-pressure chemical vapor deposition (LPCVD), Hot Filament Chemical Vapor deposit (HFCVD), plasma enhanced chemical gas
Mutually deposition (PECVD), laser assisted chemical vapor deposition (LCVD), Metallo-Organic Chemical Vapor deposition (MOCVD).
Further, in step 4, the preparation method of the structure sheaf of micro- case resonant is plating, surface tension
Method, chemical vapor deposition (CVD), one kind of atomic layer deposition (ALD)；The chemical vapor deposition includes thermal chemical vapor deposition
(TCVD), low-pressure chemical vapor deposition (LPCVD), Hot Filament Chemical Vapor deposit (HFCVD), plasma enhanced chemical vapor are heavy
Product (PECVD), laser assisted chemical vapor deposition (LCVD), Metallo-Organic Chemical Vapor deposition (MOCVD).
Further, when the material of the structure sheaf of micro- case resonant is electrically non-conductive material, micro- shell is prepared in step 4
One layer of thin conductive metal layer is formed after the structure sheaf of harmonic oscillator, preparation method is sputtering (Sputtering), evaporation
(Evaporation) and one kind of atomic layer deposition (ALD)；The thickness of the conductive metal layer is in 1nm-100nm.
Further, in step 5, the preparation method of the second layer sacrificial layer be deposition, plating, spin coating, spraying one
Kind；The deposition includes physical vapour deposition (PVD), chemical vapor deposition, atomic layer deposition；The deposition includes physical vapour deposition (PVD)
(PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD)；The physical vapour deposition (PVD) includes evaporation
(Evaporation), (Sputtering), ion plating (Ion Plating), ion beam depositing (IBD), Assisted by Ion Beam are sputtered
It deposits (IBAD)；The chemical vapor deposition include thermal chemical vapor deposition (TCVD), low-pressure chemical vapor deposition (LPCVD),
Hot Filament Chemical Vapor deposits (HFCVD), plasma enhanced chemical vapor deposition (PECVD), laser assisted chemical vapor deposition
(LCVD), Metallo-Organic Chemical Vapor deposition (MOCVD).
The beneficial effects of the present invention are:
1. method, every dry method same sex etching of the symmetrical chamber using wet etching, laser drill in conjunction with wet etching
Method, the micro- Ultrasonic machining (μ USM) of method, micro spark processing (μ EDM) in conjunction with wet etching in conjunction with wet etching
Method preparation in conjunction with wet etching, the surface roughness of the chamber of every dry method same sex etching preparation is at tens nanometers to one
Chamber surfaces roughness can be reduced to 1nm by the combination of hundred nanometers of rank, wet etching or wet etching and other methods
Level reduce the surface loss of harmonic oscillator to reduce the surface roughness of micro- case resonant；
2. the electrode and harmonic oscillator integration system in micro- case resonant device are standby, not by the way of assembling, harmonic oscillator and electricity
The spacing of pole is easy to get guarantee, advantageously ensures that harmonic oscillator is formed by the in the same size of capacitor with electrode；
3. the plate shell parts and housing parts joining part curvature of micro- case resonant are discontinuous, due to strain energy collection
In, and far from pillar, provide decoupling；Strain energy near pillar reduces, and weakens since pillar deviates micro- case resonant
It is influenced brought by symmetry axis, reduces frequency splitting (the Δ f) due to caused by pillar asymmetry；
4. the planar section of micro- case resonant nearby has slot close to pillar, the design of slot is conducive to reduce the energy of shell
It is dissipated by pillar damage, improves the Q value of harmonic oscillator.
Detailed description of the invention
Fig. 1 is the decomposition diagram of the micro- case resonant device of silicon substrate；
Fig. 2 a- Fig. 2 b is the schematic three dimensional views of the micro- case resonant device of silicon substrate；Fig. 2 a is the entirety of the micro- case resonant device of silicon substrate
Schematic diagram；Fig. 2 b is the local birds-eye view of the micro- case resonant device of silicon substrate；
Fig. 3 a- Fig. 3 d is the sectional view of four kinds of micro- case resonant；
Fig. 4 a- Fig. 4 d is the top view of four kinds of slots of micro- case resonant；
Fig. 5 is the preparation flow block diagram of micro- case resonant device；
Fig. 6 is the belt chamber of micro- case resonant device with a kind of flow chart element of preparation method of the substrate of driving detecting electrode
Figure；
Fig. 7 a- Fig. 7 d is the belt chamber of micro- case resonant device of corresponding diagram 6 with a kind of work of the substrate of driving detecting electrode
Skill preparation flow figure；
Fig. 8 is the belt chamber of micro- case resonant device with a kind of flow chart element of preparation method of the substrate of driving detecting electrode
Figure；
Fig. 9 a- Fig. 9 h is the belt chamber of micro- case resonant device of corresponding diagram 8 with a kind of work of the substrate of driving detecting electrode
Skill preparation flow figure；
Figure 10 a- Figure 10 h be micro- case resonant device it is a kind of defined between harmonic oscillator and electrode based on surface tension method between
Away from process flow chart；
Figure 11 a- Figure 11 b is the schematic cross-section of micro- case resonant device of corresponding diagram 10；
In figure, the micro- case resonant device of 100-, 110- substrate, micro- case resonant of 120-, 122- housing parts, 124- plate
Shell parts, 124A- the first plate shell parts, 124B- the second plate shell parts, 124C- third plate shell parts, 126- pillar,
128- slot, the highly conductive silicon substrate in the upper layer 130-, 140- drive detecting electrode, the oxide layer between two layers of 150- highly conductive silicon substrate,
The highly conductive silicon substrate of 160- lower layer；The upper layer 210- height leads<111>silicon wafer, 212- chamber, and 214- drives detecting electrode, under 220-
The highly conductive silicon wafer of layer, 222- center post cavity, 222- slot, 230- oxide layer；The upper layer 310- height leads<111>silicon wafer,
312- chamber, 314- drive detecting electrode, the highly conductive silicon wafer of 320- lower layer, 322- center post cavity, 322- slot, 326- oxygen
Change layer；The upper layer 410- height leads<111>silicon wafer, 412- chamber, and 414- drives detecting electrode, the highly conductive silicon wafer of 420- lower layer,
422- center post cavity, 440- glassy layer, the second glassy layer of 442-, the first sacrificial layer of 444-, 450- structure sheaf, 460- second
Sacrificial layer, micro- case resonant of 470-, 472- housing parts, 474- plate shell parts, 476- pillar, 478- slot；1000- silicon substrate
The step of micro- case resonant device preparation step, 1100- silicon substrate micro- case resonant device preparation method one, the micro- shell of 1200- silicon substrate is humorous
The step of the step of device preparation method of shaking two, 1300- silicon substrate micro- case resonant device preparation method three, the micro- shell of 1400- silicon substrate is humorous
The step of the step of device preparation method of shaking four, 1500- silicon substrate micro- case resonant device preparation method five, the micro- shell of 1600- silicon substrate is humorous
The step of the step of device preparation method of shaking six, 1700- silicon substrate micro- case resonant device preparation method seven；The band driving of 1102- belt chamber
The first step of the first preparation method of the substrate of detecting electrode, the first of substrate of the 1104- belt chamber with driving detecting electrode
The second step of kind preparation method, the third step of the first preparation method of substrate of the 1106- belt chamber with driving detecting electrode,
4th step of the first preparation method of substrate of the 1108- belt chamber with driving detecting electrode；The band driving detection of 1112- belt chamber
The first step of second of preparation method of the substrate of electrode, second of system of substrate of the 1114- belt chamber with driving detecting electrode
The second step of Preparation Method, the third step of second of preparation method of substrate of the 1116- belt chamber with driving detecting electrode, 1118-
4th step of second of preparation method of substrate of the belt chamber with driving detecting electrode, 1120- belt chamber band driving detecting electrode
Substrate second of preparation method the 5th step, 1122- belt chamber with driving detecting electrode substrate second of preparation side
6th step of method.
Specific embodiment
Further explanation is done to the present invention below with reference to embodiment and attached drawing.The following example is merely to illustrate this hair
It is bright, but be not used to limit practical range of the invention.
Embodiment 1
As shown in Fig. 1-Fig. 4 d, a kind of micro- case resonant device 100 of silicon substrate of this example offer, comprising:
One micro- case resonant 120；
One substrate 110 with multiple driving detecting electrodes 140；
Wherein, micro- case resonant 120 is made of housing parts 122, plate shell parts 124 and pillar 126, shell
Part 122 is connected with plate shell parts 124, and housing parts 122 are located at around plate shell parts 124, and composition one is bowl-shape,
Pillar 126 is located at 124 bottom of plate shell parts；The substrate 110 is made of two layers of highly conductive silicon substrate, two layers of highly conductive silicon lining
There is layer of oxide layer 150 among bottom, play a part of to be electrically isolated, has in the highly conductive silicon substrate 130 in upper layer multiple by doping formation
Driving detecting electrode 140；The multiple that driving 140 quantity of detecting electrode is 4, including even number driving electrodes, even number
Detecting electrode；Micro- case resonant 120 is electrically connected by pillar 126 with connected realize of the highly conductive silicon substrate 160 of lower layer.
The material of micro- case resonant 120 is invar alloy or super Invar alloy；Micro- case resonant 120 is straight
Diameter range is 100 μm of -4mm；The thickness range of micro- case resonant 120 is 0.1 μm -4 μm；Micro- case resonant
The diameter of 120 plate shell parts 124 is not less than 50 μm.
The plate shell parts 124 of micro- case resonant 120 nearby offer slot 128 close to pillar 126；The slot
128 depth is 1 μm -100 μm；The slot 128 is multiple, and about 126 central symmetry of pillar.
As shown in Fig. 5-Fig. 7 d, the micro- case resonant device preparation method 1000 of a kind of silicon substrate that this example provides, step is such as
Under:
Step 1 1100, substrate of the preparation belt chamber with driving detecting electrode；
Step 2 1200 passes through sputtering (Sputtering) or plasma enhancing in above-mentioned intrabasement chamber surfaces
The method for learning vapor deposition (PECVD) prepares the silica that a layer thickness is 1 μm -10 μm and forms first layer sacrificial layer；
Step 3 1300 passes through center post cavity of the method for lithography and etching on above-mentioned intrabasement planar section
On first layer sacrificial layer aperture；
Step 4 1400, in above-mentioned first layer sacrificial layer surface by plating invar alloy or super Invar alloy prepare it is micro-
The structure sheaf of case resonant；
Step 5 1500 passes through sputtering (Sputtering) or plasma on the structure sheaf of above-mentioned micro- case resonant
Enhance chemical vapor deposition (PECVD) method prepare one layer 1 μm or so thick of silica formed second layer sacrificial layer with
Micro- case resonant is protected in subsequent job step；
Step 6 1600 removes first layer sacrificial layer, micro- case resonant in substrate by chemically mechanical polishing (CMP)
Structure sheaf, second layer sacrificial layer planar section；
Step 7 1700 is etched away first layer sacrificial layer using gas phase HF and second layer sacrificial layer discharges micro- case resonant
Son；
Wherein, the belt chamber in step 1 1100 with driving detecting electrode substrate the preparation method is as follows:
Lower layer's height is led silicon wafer 220 and upper layer height leads<111>silicon wafer 210 and bonds together to form substrate by the first step 1102, and two
Layer height, which is led among silicon wafer, layer of oxide layer 230, this layer of oxide layer 230 is set to lower layer's height before bonding and leads silicon wafer 220
On or upper layer height lead on<111>silicon wafer 210；
It is the symmetrical of plane that second step 1104, the upper layer height in substrate, which lead and form multiple bottoms on<111>silicon wafer 210,
Chamber 212；Used method is method, the every dry method same sex etching of wet etching, laser drill in conjunction with wet etching
Method, the micro- Ultrasonic machining (μ USM) of method, micro spark processing (μ EDM) in conjunction with wet etching in conjunction with wet etching
One of method in conjunction with wet etching；
Third step 1106, on the surface that above-mentioned upper layer height leads<111>silicon wafer 210 and on the curved surface of symmetrical chamber 212
Counter-doping is carried out, multiple driving detecting electrodes 214 are formed；
Etching in above-mentioned symmetrical 212 bottom plane of cavity is formed slot 224 and center post cavity 222 by the 4th step 1108,
Then remove the oxide layer in bottom plane, form substrate of the belt chamber 212 with driving detecting electrode 214；
In above-mentioned steps 1, first shape in the preparation method of substrate of the belt chamber 212 with driving detecting electrode 214
Then the preparation of grooving 224 and center post cavity 222 forms multiple driving detecting electrodes 214.
Fig. 1 is the decomposition diagram of the micro- case resonant device of silicon substrate: micro- case resonant device 100 includes substrate 110 and micro- shell
Harmonic oscillator 120, substrate 110 are led by the oxide layer 150 among upper layer high-conductivity silicon substrate 130, two layers of highly conductive silicon substrate, lower layer's height
Silicon substrate 160 is constituted, and there are multiple drivings formed by counter-doping in the symmetrical cavity peace face part of upper layer high-conductivity silicon substrate 130
Detecting electrode 140.
Fig. 2 a- Fig. 2 b is the schematic three dimensional views of the micro- case resonant device of silicon substrate；Fig. 2 a is the entirety of the micro- case resonant device of silicon substrate
Schematic diagram；Fig. 2 b is the local birds-eye view of the micro- case resonant device of silicon substrate；The quantity of slot shown in Fig. 2 b does not limit the present invention
The sub- plate shell parts of micro- case resonant slot quantity.
Fig. 3 a- Fig. 3 d is the sectional view of four kinds of micro- case resonant；In Fig. 3 a, the bottom centre position of plate shell parts 124
It installs and is equipped with pillar 126；In Fig. 3 b, the bottom centre position of plate shell parts 124 is provided with pillar 126, and pillar 126 is nearby opened
Equipped with slot 128；In Fig. 3 c, the bottom centre position of plate shell parts 124 is provided with pillar 126, and pillar 126 nearby offers slot
128, and the shape of pillar 126 is " convex " font；In Fig. 3 d, plate shell parts 124 are symmetrical with Plate Shell portion centers
The first plate shell parts 124A that is step-like, being respectively sequentially connected, the second plate shell parts 124B, third plate shell parts
The bottom centre position of 124C, third plate shell parts 124C are provided with pillar 126；The quantity of slot shown in figure does not limit
The quantity of the slot of the sub- plate shell parts of micro- case resonant of the invention, the quantity of plate shell parts shown in Fig. 3 d do not limit this
The quantity of the sub- plate shell parts of micro- case resonant of invention.
Fig. 4 a- Fig. 4 d is the top view of four kinds of slots of micro- case resonant；In Fig. 4 a, the shape of slot 128 is same with pillar
Multiple annular grooves of the heart；In Fig. 4 b, the shape of slot 128 is the multiple a quarter annular grooves concentric with pillar, Mei Gesi
Separated between/mono- annular groove by plate shell parts；In Fig. 4 c, the shape of slot 128 is the multiple circular ring shapes concentric with pillar
Slot, and have multiple Plate Shell barriers part between annular groove, it is multiple " dry " fonts and " scholar " word by annular groove barrier shape
The arc-shaped slot of shape；In Fig. 4 d, the shape of slot 128 is irregular shape, multiple Plate Shell barriers part has been arranged between, by slot
128 points are multiple variform parts；The design principle of Fig. 4 c and Fig. 4 d bracket groove is to be based on lengthening energy from plate shell parts
It is transmitted to the path length of pillar；The design of slot can be not exclusively about pillar central symmetry, and it is particularly the case one by Fig. 4 d
A example；The quantity of slot shown in figure does not limit the quantity of the slot of the sub- plate shell parts of micro- case resonant of the invention, figure
Form shown in bracket groove does not limit the form and distribution of the slot of the sub- plate shell parts of micro- case resonant of the invention.
The material of micro- case resonant in this example itself is conductive, does not need additional conductive metal layer, can reduce micro-
The surface loss of case resonant.
Embodiment 2
As shown in Fig. 1-Fig. 4 d, a kind of micro- case resonant device 100 of silicon substrate of this example offer, comprising:
One micro- case resonant 120；
One substrate 110 with multiple driving detecting electrodes 140；
Wherein, micro- case resonant 120 constitutes shell by housing parts 122, plate shell parts 124 and pillar 126
Part 122 is connected with plate shell parts 124, and housing parts 122 are located at around plate shell parts 124, and composition one is bowl-shape,
Pillar 126 is located at 124 bottom of plate shell parts；The substrate 110 is made of two layers of highly conductive silicon substrate, two layers of highly conductive silicon lining
There is layer of oxide layer 150 to be electrically isolated among bottom, there are multiple drives formed by doping in the highly conductive silicon substrate 130 in upper layer
Dynamic detecting electrode 140；The multiple that driving 140 quantity of detecting electrode is 4, including the detection of even number driving electrodes, even number
Electrode；Micro- case resonant 120 is electrically connected by pillar 126 with connected realize of the highly conductive silicon substrate 160 of lower layer.
The material of micro- case resonant 120 is doping conductive diamond, doping conductive polycrystalline silicon or doping conductive carbon
One of SiClx；The thickness range of micro- case resonant 120 is 0.1 μm -4 μm；Micro- case resonant 120 is put down
The diameter of plate shell parts 124 is not less than 50 μm.
The plate shell parts 124 of micro- case resonant 120 nearby have slot 128 close to pillar 126；The slot 128
Depth is 1 μm -100 μm；The slot 128 is multiple, and about 126 central symmetry of pillar.
As shown in Fig. 5, Fig. 8-Fig. 9 h, the micro- case resonant device preparation method 1000 of a kind of silicon substrate that this example provides, step
It is rapid as follows:
Step 1 1100, substrate of the preparation belt chamber with driving detecting electrode；
Step 2 1200, prepare first layer sacrificial layer in above-mentioned intrabasement chamber surfaces with define micro- case resonant with
The spacing of electrode；
Step 3 1300 passes through first layer sacrificial layer aperture of the lithography and etching on above-mentioned intrabasement planar section；
Step 4 1400 is led in above-mentioned first layer sacrificial layer surface by Hot Filament Chemical Vapor deposit (HFCVD) doping
Electric diamond, low-pressure chemical vapor deposition (LPCVD) doping conductive polycrystalline silicon or chemical vapor deposition (CVD) adulterate conductive carbonized
The method of silicon prepares the structure sheaf of micro- case resonant；
Step 5 1500 prepares second layer sacrificial layer on the structure sheaf of above-mentioned micro- case resonant to walk in following process
Micro- case resonant of protection in rapid；
Step 6 1600 removes first layer sacrificial layer, micro- case resonant in substrate by chemically mechanical polishing (CMP)
Structure sheaf, second layer sacrificial layer planar section；
Step 7 1700, removes first layer sacrificial layer and second layer sacrificial layer discharges micro- case resonant；
Wherein, the belt chamber in step 1 1100 with driving detecting electrode substrate the preparation method is as follows:
The first step 1112, on upper layer, height leads and forms multiple upper layer height that penetrate on<111>silicon wafer 310 and lead<111>silicon wafer
310 symmetrical chamber 312；Used method is method, the every dry method of wet etching, laser drill in conjunction with wet etching
Method, micro- ultrasound of method, micro spark processing (μ EDM) of the same sex etching in conjunction with wet etching in conjunction with wet etching add
Method one of of the work (μ USM) in conjunction with wet etching；
Second step 1114 leads on silicon wafer 320 etching in lower layer's height and forms slot 324 and center post cavity 322；
Above-mentioned lower layer's height is led silicon wafer 320 and is aoxidized by third step 1116；
Above-mentioned upper layer height is led<111>silicon wafer 310 and lower layer's height leads silicon wafer 320 and bonds together to form base by the 4th step 1118
Bottom；
5th step 1120, on the surface that the upper layer height in above-mentioned substrate leads<111>silicon wafer 210 and symmetrical chamber 312
Curved surface on carry out counter-doping, form multiple driving detecting electrodes 314；
6th step 1122, using wet etching by the bottom plane of symmetrical chamber 312 oxide layer and lower layer's height lead silicon
The oxide layer on non-bonding face on disk 320 is removed, and substrate of the belt chamber 312 with driving detecting electrode 314 is obtained.
It, can first will be upper in the preparation method of substrate of the belt chamber with driving detecting electrode in above-mentioned steps 1
Layer height leads<111>silicon wafer 310 and lower layer's height leads silicon wafer 320 and bonds together to form substrate, then forms slot 324 and center post chamber
Body 322.
In step 2 1200 and step 5 1500, the preparation method of the first layer sacrificial layer and second layer sacrificial layer is heavy
Product, one kind of plating, spin coating, spraying；The deposition includes physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD), atom
Layer deposition (ALD)；The physical vapour deposition (PVD) includes evaporation (Evaporation), sputtering (Sputtering), ion plating (Ion
Plating), ion beam depositing (IBD), ion beam assisted depositing (IBAD)；The chemical vapor deposition includes thermal chemical vapor
Deposit (TCVD), low-pressure chemical vapor deposition (LPCVD), Hot Filament Chemical Vapor deposit (HFCVD), plasma enhanced chemical gas
Mutually deposition (PECVD), laser assisted chemical vapor deposition (LCVD), Metallo-Organic Chemical Vapor deposition (MOCVD).
The material of micro- case resonant in this example is doping conductive material, does not need additional conductive metal layer, can
Reduce the surface loss of micro- case resonant.
Embodiment 3
As Figure 1-Figure 4, the micro- case resonant device 100 of a kind of silicon substrate that this example provides, comprising:
One micro- case resonant 120；
One substrate 110 with multiple driving detecting electrodes 140；
Wherein, micro- case resonant 120 is made of housing parts 122, plate shell parts 124 and pillar 126, shell
Part 122 is connected with plate shell parts 124, and housing parts 122 are located at around plate shell parts 124, and composition one is bowl-shape,
Pillar 126 is located at 124 bottom of plate shell parts；The substrate 110 is made of two layers of highly conductive silicon substrate, two layers of highly conductive silicon lining
There is layer of oxide layer 150 to be electrically isolated among bottom, there are multiple drives formed by doping in the highly conductive silicon substrate 130 in upper layer
Dynamic detecting electrode 140；The multiple that driving 140 quantity of detecting electrode is 4, including the detection of even number driving electrodes, even number
Electrode；Micro- case resonant 120 is electrically connected by pillar 126 with connected realize of the highly conductive silicon substrate 160 of lower layer.
The material of micro- case resonant 120 is 63HfO2·37TiO2、HfO2·WO3·Ta2O5、Al2O3·TiO2、
55Ta2O5·45WO3、37Ta2O5·63WO3Or Al2O3One of；When the material of micro- case resonant 120 is non-conductive,
The surface of micro- case resonant 120 is covered with or is partially covered with conductive metal layer；The conductive metal layer is very thin, but to guarantee
Electric conductivity；Sub 120 diameter ranges of micro- case resonant are 100 μm of -4mm；The thickness range of micro- case resonant 120 is
0.1μm-20μm；The diameter of the plate shell parts 124 of micro- case resonant 120 is not less than 50 μm；
The plate shell parts 124 of micro- case resonant 120 nearby have slot 128 close to pillar 126；The slot 128
Depth is 1 μm -100 μm；The slot 128 can be about 126 central symmetry of pillar.
As shown in Fig. 5-Figure 11 b, the micro- case resonant device preparation method of a kind of silicon substrate that this example provides, its step are as follows:
Step 1 1100, substrate of the preparation belt chamber 412 with driving detecting electrode 414；
It is humorous to define micro- shell to prepare first layer sacrificial layer 444 on above-mentioned intrabasement 412 surface of chamber for step 2 1200
The spacing of oscillator and electrode；The preparation method comprises the following steps: the upper layer height in above-mentioned substrate is led on<111>silicon wafer 410 under vacuum conditions
Glassy layer 440 is thinned and is chemically-mechanicapolish polished (CMP) at the second glassy layer 442, then by one layer of glassy layer 440 of anode linkage
Disk after bonding is put into heating furnace, the temperature of heating furnace is higher than the softening point of glassy layer 440, in hot environment and air pressure
Under difference, Glass Transition flows back to form first layer sacrificial layer 444.The thickness range of second glassy layer 442 between 5 μm -50 μm, this
After sample Glass Transition can quick backflow form first layer sacrificial layer 444, and the thickness of first layer sacrificial layer 444 readily satisfies micro- shell
The pitch requirements of body harmonic oscillator 470 and driving detecting electrode 414.
Step 3 1300 is opened by first layer sacrificial layer 444 of the lithography and etching on above-mentioned intrabasement planar section
Hole, and lower layer's height in substrate leads formation center post cavity 422 on silicon wafer 420；
Step 4 1400, using atomic layer deposition (ALD), to prepare micro- shell humorous on above-mentioned 444 surface of first layer sacrificial layer
The material of the structure sheaf 450 of oscillator, the structure sheaf 450 of micro- case resonant can be 63HfO2·37TiO2、HfO2·WO3·
Ta2O5、Al2O3·TiO2、55Ta2O5·45WO3、37Ta2O5·63WO3Or Al2O3；
Step 5 1500 prepares second layer sacrificial layer 460 subsequent on the structure sheaf 450 of above-mentioned micro- case resonant
Micro- case resonant 470 is protected in procedure of processing；
Step 6 1600, first layer sacrificial layer 444, the micro- shell removed in substrate by chemically mechanical polishing (CMP) are humorous
The planar section of the structure sheaf 450 of oscillator, second layer sacrificial layer 460；
Step 7 1700, removes first layer sacrificial layer 444 and second layer sacrificial layer 460 discharges micro- case resonant 470；
Wherein, there are two types of the preparation methods of substrate of the belt chamber in step 1 with driving detecting electrode, such as example 1 and in fact
Example 2.
Wherein, when the structure sheaf of micro- case resonant 470 is non-conductive material, micro- case resonant is prepared in step 4
One layer of thin conductive metal layer is formed after 470 structure sheaf, preparation method includes sputtering (Sputtering) and atomic layer deposition
(ALD), the thickness of conductive metal layer is in 1nm-100nm.
In step 5 1500, the preparation method of the second layer sacrificial layer 460 be deposition, plating, spin coating, spraying one
Kind；The deposition includes physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD)；The physics gas
Mutually deposition includes evaporation (Evaporation), sputtering (Sputtering), ion plating (Ion Plating), ion beam depositing
(IBD), ion beam assisted depositing (IBAD)；The chemical vapor deposition includes thermal chemical vapor deposition (TCVD), low pressure chemical
It is vapor-deposited (LPCVD), Hot Filament Chemical Vapor deposits (HFCVD), plasma enhanced chemical vapor deposition (PECVD), laser
Assistant chemical vapor deposition (LCVD), Metallo-Organic Chemical Vapor deposition (MOCVD).
First layer sacrificial layer in this example is prepared by surface tension, and the husk surface that surface tension method is formed is thick
Rugosity can get extremely low in Ethylmercurichlorendimide rank since the structure sheaf of micro- case resonant is formed on first layer sacrificial layer
Roughness can substantially reduce the surface loss of micro- case resonant in this way, improve the Q value of harmonic oscillator.
The structure sheaf of micro- case resonant in this example is prepared by atomic layer deposition, therefore thickness of shell is very equal
It is even, reduce since thickness of shell unevenness bring influences, improves the performance of harmonic oscillator.
The above is only a preferred embodiment of the present invention, it should be pointed out that: for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of micro- case resonant device of silicon substrate, comprising:
One micro- case resonant；
One substrate with multiple driving detecting electrodes；
Wherein, micro- case resonant is made of housing parts, plate shell parts and pillar, the housing parts and Plate Shell
Part is connected, and plate shell parts are located at the bottom of housing parts, and the pillar is set to the bottom centre position of plate shell parts
It sets；The plate shell parts of micro- case resonant are nearby provided with slot close to pillar；The substrate is served as a contrast by two layers of highly conductive silicon
Bottom is constituted, and is electrically isolated between two layers of highly conductive silicon substrate by the layer of oxide layer being arranged, in the highly conductive silicon substrate in upper layer
It is provided with multiple driving detecting electrodes；The multiple that the driving detecting electrode quantity is 4, including even number driving electrodes, even number
A detecting electrode；Micro- case resonant is electrically connected by pillar with connected realize of the highly conductive silicon substrate of lower layer.
2. micro- case resonant device as described in claim 1, it is characterised in that: the material of micro- case resonant is invar conjunction
Gold, doping conductive diamond, doping conductive polycrystalline silicon, adulterates conductive silicon carbide, silica, mixed with dioxy at super Invar alloy
Change silica, the 63HfO of titanium2·37TiO2、HfO2·WO3·Ta2O5、Al2O3·TiO2、55Ta2O5·45WO3、
37Ta2O5·63WO3Or Al2O3One kind；Wherein, when the material of micro- case resonant is electrically non-conductive material, micro- shell is humorous
The surface of oscillator is covered with or is partially covered with conductive metal layer.
3. micro- case resonant device as claimed in claim 1 or 2, it is characterised in that: micro- sub- diameter range of case resonant is
100μm-4mm；The thickness range of micro- case resonant is 0.1 μm -10 μm；The plate shell parts of micro- case resonant
Diameter be not less than 50 μm.
4. micro- case resonant device as described in claim 1, it is characterised in that: the depth of the slot is 1 μm -100 μm；The slot
To be multiple, and about pillar central symmetry.
5. the preparation method of the micro- case resonant device of silicon substrate as described in claim 1-4 is any, it is characterised in that: its step is such as
Under:
Step 1, substrate of the preparation belt chamber with driving detecting electrode；
Step 2 prepares first layer sacrificial layer in above-mentioned intrabasement chamber surfaces to define between micro- case resonant and electrode
Away from；
Step 3, the first layer sacrificial layer aperture by way of lithography and etching on above-mentioned intrabasement planar section；
Step 4 prepares the structure sheaf of micro- case resonant in above-mentioned first layer sacrificial layer surface；
Step 5 prepares second layer sacrificial layer on the structure sheaf of above-mentioned micro- case resonant to protect in subsequent job step
Micro- case resonant；
Step 6 removes the structure of first layer sacrificial layer in substrate, micro- case resonant by way of chemically mechanical polishing
The planar section of layer, second layer sacrificial layer；
Step 7, removes first layer sacrificial layer and second layer sacrificial layer discharges micro- case resonant.
6. the preparation method of the micro- case resonant device of silicon substrate as claimed in claim 5, it is characterised in that: the belt chamber in step 1
Any one preparation that substrate with driving detecting electrode passes through following two preparation method；
The first the preparation method is as follows:
Lower layer's height is led silicon wafer and upper layer height leads<111>silicon wafer and bonds together to form substrate by step 11, and two layers of height leads silicon wafer
Between have a layer of oxide layer, processing leads silicon wafer in lower layer's height to the oxide layer before two layers of height leads silicon wafer bonding or upper layer is high
It leads on<111>silicon wafer；
Step 12, the upper layer height in substrate lead the symmetrical chamber for forming that multiple bottoms are plane on<111>silicon wafer, are used
Method are as follows: method in conjunction with wet etching of wet etching, laser drill, every dry method same sex etch in conjunction with wet etching
Method, micro spark process one of method, micro- Ultrasonic machining in conjunction with wet etching in the method in conjunction with wet etching
Kind；
Step 13 carries out counter-doping, shape on the surface that above-mentioned upper layer height leads<111>silicon wafer and on the curved surface of symmetrical chamber
At multiple driving detecting electrodes；
Etching in above-mentioned symmetrical chamber bottom plane is formed slot and center post cavity by step 14, then removes bottom plane
On oxide layer, formed belt chamber band drive detecting electrode substrate；
Second the preparation method is as follows:
Step 21, on upper layer, height leads and forms multiple symmetrical chambers for penetrating silicon wafer, used method on<111>silicon wafer
Are as follows: method, the every dry method same sex of wet etching, laser drill in conjunction with wet etching etch the side in conjunction with wet etching
One of the method for method, micro- Ultrasonic machining in conjunction with wet etching of method, micro spark processing in conjunction with wet etching；
Step 22 leads on silicon wafer etching in lower layer's height and forms slot and center post cavity；
Above-mentioned lower layer's height is led silicon wafer oxidation by step 23；
Above-mentioned upper layer height is led<111>silicon wafer and lower layer's height leads silicon wafer and bonds together to form substrate by step 24；
Step 25 carries out instead on the surface that the upper layer height in above-mentioned substrate leads<111>silicon wafer and on the curved surface of symmetrical cavity
To doping, multiple driving detecting electrodes are formed；
Step 26, in the way of wet etching by the bottom plane of symmetrical chamber oxide layer and lower layer's height lead on silicon wafer
Non- bonding face on oxide layer remove, obtain belt chamber with driving detecting electrode substrate.
7. the preparation method of the micro- case resonant device of silicon substrate as claimed in claim 5, it is characterised in that: in step 2, described
The preparation method of one layer of sacrificial layer is one kind of deposition, plating, spin coating, spraying, surface tension method；The deposition includes physics gas
Mutually deposition, chemical vapor deposition, atomic layer deposition；The physical vapour deposition (PVD) is heavy including evaporation, sputtering, ion plating, ion beam
Product, ion beam assisted depositing；The chemical vapor deposition includes thermal chemical vapor deposition, low-pressure chemical vapor deposition, heated filament
Vapor deposition, plasma enhanced chemical vapor deposition, laser assisted chemical vapor deposition, Metallo-Organic Chemical Vapor are heavy
Product.
8. the preparation method of the micro- case resonant device of silicon substrate as claimed in claim 5, it is characterised in that: described micro- in step 4
The preparation method of the structure sheaf of case resonant is plating, surface tension method, chemical vapor deposition, one kind of atomic layer deposition；
The chemical vapor deposition includes thermal chemical vapor deposition, low-pressure chemical vapor deposition, Hot Filament Chemical Vapor deposit, plasma
Enhance chemical vapor deposition, laser assisted chemical vapor deposition, Metallo-Organic Chemical Vapor deposition.
9. the preparation method of the micro- case resonant device of silicon substrate as claimed in claim 5, it is characterised in that: the knot of micro- case resonant
When the material of structure layer is electrically non-conductive material, one layer of thin conductive gold is formed after the structure sheaf of micro- case resonant is prepared in step 4
Belong to layer, preparation method is one kind of sputtering, evaporation or atomic layer deposition；The thickness of the conductive metal layer is in 1nm-100nm.
10. the preparation method of the micro- case resonant device of silicon substrate as claimed in claim 5, it is characterised in that: in step 5, described
The preparation method of two layers of sacrificial layer is deposition, one kind of plating, spin coating, spraying；The deposition includes physical vapour deposition (PVD), chemistry
Vapor deposition, atomic layer deposition；The physical vapour deposition (PVD) is auxiliary including evaporation, sputtering, ion plating, ion beam depositing, ion beam
Help deposition；The chemical vapor deposition include thermal chemical vapor deposition, low-pressure chemical vapor deposition, Hot Filament Chemical Vapor deposit,
Plasma enhanced chemical vapor deposition, laser assisted chemical vapor deposition, Metallo-Organic Chemical Vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611030181.8A CN106556386B (en) | 2016-11-15 | 2016-11-15 | Micro- case resonant device of silicon substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611030181.8A CN106556386B (en) | 2016-11-15 | 2016-11-15 | Micro- case resonant device of silicon substrate and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106556386A CN106556386A (en) | 2017-04-05 |
| CN106556386B true CN106556386B (en) | 2019-11-08 |
Family
ID=58444499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611030181.8A Active CN106556386B (en) | 2016-11-15 | 2016-11-15 | Micro- case resonant device of silicon substrate and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106556386B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107560607A (en) * | 2017-08-16 | 2018-01-09 | 浙江大学 | Gyroscope based on semi circular shells harmonic oscillator and preparation method thereof |
| CN109556588B (en) * | 2018-11-28 | 2020-06-09 | 中国人民解放军火箭军工程大学 | Long-life independent power supply type gyro sensitive part device and method |
| CN112461266B (en) * | 2020-11-20 | 2023-04-11 | 大连理工大学 | Diamond gyro harmonic oscillator nano-manufacturing equipment |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102449434A (en) * | 2009-06-01 | 2012-05-09 | 波音公司 | Gyroscope packaging assembly |
| CN102741674A (en) * | 2010-01-11 | 2012-10-17 | 艾尔默斯半导体股份公司 | Micro-electromechanical semiconductor component and method for the production thereof |
| CN103344229A (en) * | 2013-07-05 | 2013-10-09 | 西北工业大学 | Miniature hemispherical resonant gyroscope based on SOI (Silicon on Insulator) silicon slice and manufacturing method of miniature hemispherical resonant gyroscope |
| CN104197921A (en) * | 2014-08-08 | 2014-12-10 | 上海交通大学 | Pattern-transferred embossed miniature hemispherical resonant gyroscope and manufacturing method thereof |
| CN104215233A (en) * | 2014-09-18 | 2014-12-17 | 中国人民解放军国防科学技术大学 | Cylindrical shell gyroscope harmonic oscillator with rigid shaft self-stability |
| CN104897146A (en) * | 2015-05-29 | 2015-09-09 | 上海交通大学 | Out-plane piezoelectric type hemispheric micro-gyroscope and preparation method thereof |
| CN104913773A (en) * | 2015-05-29 | 2015-09-16 | 上海交通大学 | Semi-spherical micro gyroscope packaging structure and preparation method thereof |
| CN104931031A (en) * | 2015-05-29 | 2015-09-23 | 上海交通大学 | Outer edge fixed type electrostatic driving multi-ring gyroscope and preparation method thereof |
| CN105466405A (en) * | 2016-01-07 | 2016-04-06 | 东南大学 | Hybrid hemispherical resonator micro-gyro and machining process thereof |
| CN105540530A (en) * | 2015-12-18 | 2016-05-04 | 东南大学 | Micro-glass hemispherical resonator gyro and wafer level preparation method thereof |
| CN105628013A (en) * | 2016-01-07 | 2016-06-01 | 东南大学 | Assembled hemisphere resonance micro gyroscope and processing process thereof |
| US9429428B2 (en) * | 2013-03-15 | 2016-08-30 | The Regents Of The University Of California | Environmentally robust micro-wineglass gyroscope |
-
2016
- 2016-11-15 CN CN201611030181.8A patent/CN106556386B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102449434A (en) * | 2009-06-01 | 2012-05-09 | 波音公司 | Gyroscope packaging assembly |
| CN102741674A (en) * | 2010-01-11 | 2012-10-17 | 艾尔默斯半导体股份公司 | Micro-electromechanical semiconductor component and method for the production thereof |
| US9429428B2 (en) * | 2013-03-15 | 2016-08-30 | The Regents Of The University Of California | Environmentally robust micro-wineglass gyroscope |
| CN103344229A (en) * | 2013-07-05 | 2013-10-09 | 西北工业大学 | Miniature hemispherical resonant gyroscope based on SOI (Silicon on Insulator) silicon slice and manufacturing method of miniature hemispherical resonant gyroscope |
| CN104197921A (en) * | 2014-08-08 | 2014-12-10 | 上海交通大学 | Pattern-transferred embossed miniature hemispherical resonant gyroscope and manufacturing method thereof |
| CN104215233A (en) * | 2014-09-18 | 2014-12-17 | 中国人民解放军国防科学技术大学 | Cylindrical shell gyroscope harmonic oscillator with rigid shaft self-stability |
| CN104897146A (en) * | 2015-05-29 | 2015-09-09 | 上海交通大学 | Out-plane piezoelectric type hemispheric micro-gyroscope and preparation method thereof |
| CN104913773A (en) * | 2015-05-29 | 2015-09-16 | 上海交通大学 | Semi-spherical micro gyroscope packaging structure and preparation method thereof |
| CN104931031A (en) * | 2015-05-29 | 2015-09-23 | 上海交通大学 | Outer edge fixed type electrostatic driving multi-ring gyroscope and preparation method thereof |
| CN105540530A (en) * | 2015-12-18 | 2016-05-04 | 东南大学 | Micro-glass hemispherical resonator gyro and wafer level preparation method thereof |
| CN105466405A (en) * | 2016-01-07 | 2016-04-06 | 东南大学 | Hybrid hemispherical resonator micro-gyro and machining process thereof |
| CN105628013A (en) * | 2016-01-07 | 2016-06-01 | 东南大学 | Assembled hemisphere resonance micro gyroscope and processing process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106556386A (en) | 2017-04-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106556386B (en) | Micro- case resonant device of silicon substrate and preparation method thereof | |
| US11548805B2 (en) | Gyroscope and fabrication process | |
| US10527422B2 (en) | Micro three-dimensional shell resonator gyroscope | |
| CN101279713B (en) | Manufacturing method for floating type micro-silicon electrostatic gyro/accelerometer sensitive structure | |
| CN105466405B (en) | A kind of hybrid hemispherical resonator gyroscope and its processing technology | |
| CN103322994B (en) | Silica-based super-thin micro-hemispherical resonator gyroscope of a kind of biplate integrated form and preparation method thereof | |
| CN103528576B (en) | Hemispherical resonance micro mechanical gyroscope and processing technology thereof | |
| CN105540530B (en) | Micro- glass dome resonant gyroscope and its wafer level preparation method | |
| CN105387852B (en) | The self-aligned technology preparation method of micro- half spherical top harmonic oscillator | |
| US9494425B2 (en) | Gyroscope and method of fabricating a resonator for a gyroscope | |
| US9429428B2 (en) | Environmentally robust micro-wineglass gyroscope | |
| CN105021179A (en) | Micro-hemispherical resonator gyroscope based on borosilicate glass annealing forming and preparing method | |
| CN106052664B (en) | Case resonant device with impact resistance | |
| US20170016742A1 (en) | Method of fabricating micro-glassblown gyroscopes | |
| CN107655467A (en) | A kind of overall hemispherical resonant gyro and its processing method for packing of declining | |
| CN107063220B (en) | Micro-hemispherical resonator gyroscope based on SOI packaging and processing method thereof | |
| CN105973217A (en) | Miniature nuclear magnetic resonance gyro air chamber | |
| CN107560607A (en) | Gyroscope based on semi circular shells harmonic oscillator and preparation method thereof | |
| US20150330782A1 (en) | Mass-loaded coriolis vibratory gyroscope | |
| CN104897146A (en) | Out-plane piezoelectric type hemispheric micro-gyroscope and preparation method thereof | |
| CN104197914B (en) | Miniature blow-molding semispherical resonator gyroscope and preparation method thereof | |
| CN104197919B (en) | The glass metal hemispherical resonator microthrust test of up/down perforation support | |
| CN203298772U (en) | Three-chip assembled type silica-based ultrathin micro semisphere resonance gyroscope | |
| CN105628013B (en) | A kind of assembly type hemispherical resonator gyroscope and its processing technology | |
| WO2005100237A1 (en) | Isolated planar mesogyroscope |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |