CN105021179A - Micro-hemispherical resonator gyroscope based on borosilicate glass annealing forming and preparing method - Google Patents
Micro-hemispherical resonator gyroscope based on borosilicate glass annealing forming and preparing method Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/567—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
- G01C19/5691—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially three-dimensional vibrators, e.g. wine glass-type vibrators
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Abstract
The invention discloses a micro-hemispherical resonator gyroscope based on borosilicate glass annealing forming and a preparing method of the micro-hemispherical resonator gyroscope. A silicon wafer is used as a substrate to form a silicon substrate, a cylindrical cavity and a center supporting pillar in the circle center of the cavity are etched on the upper surface of the silicon wafer, and the center supporting pillar is connected with the center of a hemispherical resonator to form a suspension structure. Meanwhile, eight flat plate type electrodes are evenly distributed on the periphery of the cylindrical cavity in the upper surface of the silicon wafer and around the hemispherical resonator, and the eight flat plate type electrodes are composed of the four driving electrodes and the four detection electrodes. All the driving electrodes and all the detection electrodes are not in contact with the hemispherical resonator, identical gaps exist, and the driving electrodes and the detection electrodes are arranged in sequence alternately. The prepared glass metal blowing type micro-hemispherical resonator gyroscope has the advantages of being simple in structure, low in surface stress, high in symmetry and the like, and therefore the micro-hemispherical resonator gyroscope can have stable performance and a wider application range.
Description
Technical field
The invention belongs to the micro-inertia sensor technical field in micro-electromechanical system (MEMS), particularly a kind ofly to anneal shaping micro hemispherical resonator gyro and manufacture method based on borosilicate glass.
Background technology
Along with the development of science and techniques of defence and civilian industry, gyroscope has become the very important inertia device in the field such as gesture stability and navigator fix.Wherein, hemispherical resonant gyro has accurate scale factor, gratifying random drift and bias stability because of it, and the feature such as environment (acceleration, vibration, temperature etc.) is insensitive to external world, be acknowledged as one of best gyro product of current performance.The precision of hemispherical reso nance gyroscope, even higher than optical fibre gyro and laser gyro, also has that resolution is high, measurement range is wide, overload-resistant, radioresistance, the advantage such as anti-interference.This gyrostatic machine-shaping, has become an important directions of the extensive investigation and application exploitation of MEMS technology in the last few years.
Be subject to the inspiration of the long-tested macroscopical hemispherical reso nance gyroscope of performance, the 3-DMEMS wineglass formula hemispherical reso nance gyroscope structure being applied to clock and inertia detection has become the focus of research in recent years.Along with the appearance of 3-D precision processing technology, producing this wineglass formula hemispherical reso nance gyroscope structure by batch becomes possibility.Because wineglass formula structure has obvious advantage in symmetry, energy loss in little and isolation extraneous vibration etc., this version probably becomes the MEMS that a new generation has good dynamics performance.But compared to macroscopical processing technology, micro fabrication is more suitable for manufacturing flat and relative error is lower by (10
-2~ 10
-4magnitude) structure.The size of space etc. of shaping inconsistency, alignment error, higher surfaceness and deposit film is in current MEMS manufacturing process, hinders the principal element realizing high precision hemispherical reso nance gyroscope technique.Therefore, micro fabrication is utilized to manufacture the smooth, symmetrical of wafer level and the 3-D hemispherical resonator formula gyroscope structure with high-aspect-ratio is still a technical barrier.
At present, the technology of preparing of domestic and international existing hemispherical resonator formula gyro is mainly divided into two large classes, and the first kind is film growth mode.201210231285.0) and Chinese patent " micro hemispherical resonator gyro and preparation method thereof " (number of patent application: 201310022146.1) etc. Chinese patent " hemispherical resonator decline mechanical gyroscope and processing technology thereof " (number of patent application:, film growth techniques is all adopted to manufacture hemispherical reso nance gyroscope, be characterized in: at silicon face cvd silicon dioxide film, isotropic dry etch obtains hemisphere spherical shell, and resonant layer adopts polysilicon or silicon dioxide or silicon nitride or adamas material.The mode of this film growth exists that stress is large, surfaceness is large and the shortcoming such as yield rate is low.
Equations of The Second Kind technology of preparing is the mode of glass blowing/bleed.The advantage of this technology is mainly to adopt Surface-Micromachining, and cost is lower, can realize batch production; In etching glass, isotropic etching method will cause harmonic oscillator and electrode separation wide, and the method for anisotropic etching glass can only use dry plasma.But dry etching glass technology is limited by etching depth, surfaceness and lower depth-to-width ratio.This uses glass material also insurmountable technical matters at present.
At present, Chinese patent " up/down perforation support hemispherical resonator microthrust test " (number of patent application: 201410390495.3) and Chinese patent " the glass metal hemispherical resonator microthrust test that up/down perforation supports " (number of patent application: 201410390485.X) adopt glass or glass metal exhaust technique to manufacture hemispherical resonator body, recycle shaping hemispherical resonator body and top struts bonding, form hemispherical reso nance gyroscope one-piece construction.201410390482.6) and Chinese patent " ring glass enclosed glass blowing micro hemispherical resonator gyro " (application number: the mode that 201410390473.7) it is also proposed glass metal/glass blowing manufactures hemispherical reso nance gyroscope Chinese patent " a kind of glass metal blowing produced micro hemispherical resonator gyro and preparation method thereof " (application number:.But this type of technology exists high to equipment requirement, surface stress is large, and yield rate is low, and electrode consistance is not high, and is difficult to ensure the problems such as symmetry.
Summary of the invention
The object of the present invention is to provide the hemispherical reso nance gyroscope that a kind of surface stress is low, electrode consistance is high, symmetry is high, simple for process, yield rate is high and the manufacture method of blowing based on borosilicate glass high annealing thereof.
The technical solution realizing the object of the invention is: a kind ofly to anneal shaping micro hemispherical resonator gyro and manufacture method thereof based on borosilicate glass, a silicon chip is formed silicon base as substrate, silicon chip upper surface etches the centre strut of a circular cylindrical cavity and cavity circle centre position, this centre strut is connected with hemispherical resonator subcenter, forms hanging structure; Simultaneously, peripheral at the circular cylindrical cavity of silicon chip upper surface, and be evenly arranged eight plate electrodes around hemispherical resonator, these eight plate electrodes are made up of four drive electrodes and four detecting electrodes, all drive electrodes, detecting electrode do not contact with hemispherical resonator, there is identical gap, and drive electrode and detecting electrode are spaced apart successively.
The present invention compared with prior art, its remarkable advantage: the glass metal blowing produced micro hemispherical resonator gyro that (1) adopts the method to make, structure is simple, low advantage makes it have more stable performance and range of application widely to surface stress with high symmetry etc.(2) adopt silicon chip and glass sheet as main processing structure, only adopt MEMS micro-processing technology can realize the preparation of hemispherical reso nance gyroscope, technique is simple, and cost is lower, and can realize batch production.(3) all photoetching work steps all complete before glass blowing, 3-D structure can be realized, turn avoid and implement the larger graphics art of difficulty, as: 3-D photoetching, shadow mask mask and laser ablation technology, avoid the fabrication error that complicated technology is introduced to greatest extent.(4) blow-molded glass produce edge faults and heat/mechanical disturbance be affect the symmetric the biggest factor of hemispherical reso nance gyroscope.For reduce as far as possible photoetching with etching error, the present invention propose process program only use two step photoetching work steps, to greatest extent Simplified flowsheet, avoid error, ensure that the symmetry of structure.(5) select the borosilicate glass of alkali metal containing ion as harmonic oscillator structural material, compare with the glass substrate (as soda-lime glass, quartz glass) of routine, the etch rate of this borosilicate glass is high, and can obtain more desirable anisotropic etch topography by the control of mask and etching parameters.(6) metal mask before etching glass adopts electroplating technology, can reduce resonant layer surface stress, and bottom line reduces the front destruction to glass flatness of blow-molded glass, improves yield rate.(7) glass deep etching using plasma oxide dry etching technology, by conservative control etching parameters, can ensure etching precision and the depth-to-width ratio of the electric capacity spacing of electrode and harmonic oscillator, and obtain complete, level and smooth etched edge.(8) use flat external electrode structure, overcome drive electrode and the too small shortcoming of sensitive electrode working area, and its integrated level can be improved.(9) in the technique of release silicon, form unsettled hemispherical resonator and external electrode structure while isotropic dry etch, avoid the crystal orientation that asymmetric etching may occur.
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 the present invention is based on borosilicate glass to anneal the three-dimensional structure schematic diagram of shaping micro hemispherical resonator gyro.
Fig. 2 the present invention is based on the micro hemispherical resonator gyro different angles schematic diagram that borosilicate glass anneals shaping: (a) vertical view, (b) front view, (c) 3/4 cut-open view.
Fig. 3 is the flow process chart (central cross-section figure) of hemispherical reso nance gyroscope of the present invention, wherein, the silicon base 1 of (a)-using Silicon Wafer as hemispherical reso nance gyroscope, (b)-deep etching circular cylindrical cavity 4 and centre strut 5, (c)-glass wafer 6 and silicon base 1 anode linkage, (d)-deep etching glass wafer, e ()-high annealing forms hemispherical resonator, (f)-release silicon base 1, form unsettled hemispherical resonator minor structure, (g)-covering metal conductive layer.
Embodiment
Composition graphs 1 and Fig. 2, the present invention is based on borosilicate glass and to anneal shaping micro hemispherical resonator gyro, comprising:
A silicon base 1;
A hemispherical resonator 2;
A centre strut 5 connects hemispherical resonator and silicon base;
Arrange eight plate electrodes 3 be evenly arranged on a silicon substrate 1 and around hemispherical resonator, these eight plate electrodes 3 are four drive electrode 3a, 3c, 3e, 3g and four detecting electrode 3b, 3d, 3f, 3h forms, all drive electrodes, detecting electrode all do not contact with hemispherical resonator, and drive electrode and detecting electrode are spaced apart successively, are namely detecting electrodes between every two drive electrodes, equally, be a drive electrode between every two detecting electrodes.
The present invention is based on the anneal centre strut 5 of shaping micro hemispherical resonator gyro of borosilicate glass to be connected with hemispherical resonator subcenter, between hemispherical resonator 2 with the plate electrode of eight in silicon base 13, identical gap is set, forms hanging structure.Gap wherein between hemispherical resonator 2 and eight plate electrodes 3 is 80-120 μm.The structure of hemispherical resonator 2 is that 3-D is inverted wineglass formula.
The present invention is based on the anneal principle of work of shaping micro hemispherical resonator gyro of borosilicate glass is: drive electrode 3a, 3c, 3e, when 3g is applied in alternating voltage, under the effect of capacitive sensing effect, the spherical shell radial vibration of hemispherical resonator 2 produces standing wave, forms driven-mode; When input angular velocity, under coriolis force effect, the relative housing of the vibration shape of hemispherical resonator produces hoop precession, and form sensed-mode, detecting electrode 3b, the sensitive signal that 3d, 3f, 3h are produced by capacity effect, realizes input.
Composition graphs 3, the present invention is based on borosilicate glass to anneal the manufacture method of shaping micro hemispherical resonator gyro, a silicon chip is formed silicon base 1 as substrate, silicon chip upper surface etches the centre strut 5 of a circular cylindrical cavity 4 and cavity circle centre position, this centre strut 5 is connected with hemispherical resonator subcenter, forms hanging structure; Simultaneously, peripheral at the circular cylindrical cavity 4 of silicon chip upper surface, and be evenly arranged eight plate electrodes 3 around hemispherical resonator 2, these eight plate electrodes 3 are made up of four drive electrodes and four detecting electrodes, all drive electrodes, detecting electrode do not contact with hemispherical resonator 2, there is identical gap, and drive electrode and detecting electrode are spaced apart successively.Method concrete steps of the present invention are as follows:
Step 1, as (a) of Fig. 3, silicon base 1 using Silicon Wafer as hemispherical reso nance gyroscope, as (b) of Fig. 3, utilize photoetching technique (the first gluing of crystal column surface, soft baking, expose again, develop, post bake forms photoetching offset plate figure) form circular cylindrical cavity and centre strut figure at Silicon Wafer upper surface, then ICP (InductivelyCoupled Plasma inductively coupled plasma) lithographic technique deep etching circular cylindrical cavity 4 and centre strut 5 is used, cleaning is afterwards removed photoresist, peel off unnecessary metal (Lift-off, solution-off stripping method).
Step 2, (as under oxygen gas plasma 200W and argon plasma 400W environment) pre-treatment under equipment for burning-off photoresist by plasma environment by borosilicate glass wafer 6, clean bonding face, removes surface particles; As (c) of Fig. 3, circular cylindrical cavity 4 periphery and the centre strut 5 of borosilicate glass wafer 6 and silicon base 1 carry out anode linkage, simultaneously in circular cylindrical cavity 4 sealed inert gas to 1atm.Anode linkage, also known as electrostatic bonding, is apply to wafer the bonding that certain electric field intensity completes at 200 ~ 500 DEG C, is generally used for the bonding of si-glass.
Step 3, wafer after cleaning bonding, magnetron sputtering 30-35nm Ti, then uses electric plating method deposit thickness to be that the metal (as Al) of 4 μm is as mask, in electroplating process, (as lower than 150 DEG C) is heated to reduce unrelieved stress to substrate; After having electroplated mask, utilize photoetching technique graphical in mask surface, wafer after photoetching is placed in 40 ~ 50 DEG C of waters bath with thermostatic control, uses mixed solution (dust technology as 6: 1 ~ 8: 1: glacial acetic acid solution) the wet etching mask of dust technology and glacial acetic acid.
Step 4, as (d) of Fig. 3, use plasma oxide dry etching technology (as used ULVACNLD570 oxide etching machine) the glassy layer deep etching to the wafer after wet etching mask, form harmonic oscillator part 2a (anneal shaping before) and plate electrode 3 part of glassy layer unit, then cleaning is removed photoresist, and uses the remaining mask of mixed solution wet etching of dust technology and glacial acetic acid.In step 4, using plasma oxide dry etching technology, etching parameters arranges as follows: C3F8-30sccm, Ar-90sccm are as etching gas, and counterbalance Physicochemical etches, and ensures that etched surface is more smooth; O
2-90sccm is plasma cleaning gas, low pressure 3mT is set, electromagnetic power 1500W, bias power 50W, etch rate is made to reach 0.8 μm/min, and the depth-to-width ratio that can obtain close to 8: 1, ensure that the etching precision of control electrode and hemispherical resonator electric capacity spacing simultaneously, obtain complete, level and smooth etched edge.The glassy layer deep etching degree of depth of wafer can be 90 ~ 100 μm.
Step 5, under quick anneal oven hot environment, inert gas in described circular cylindrical cavity is due to inner and outer air pressure difference expanded by heating, as (e) of Fig. 3, the harmonic oscillator part 2a of glassy layer unit is subject to surface tension and chamber pressure generation viscous yielding, the crystal column surface obtained in step 4 forms hemispherical resonator 2 (forming the hemispherical resonator that 3-D is inverted wineglass formula), and is cooled to room temperature rapidly.The temperature of quick anneal oven hot environment can be 800-900 DEG C.
Step 6, uses XeF
2gas attack silicon base 1 forms cavity 7 (cavity formed after discharging hemispherical resonator and silicon base bonding part), as (f) of Fig. 3, releases hemispherical resonator 2 and the bond area of silicon base 1, forms independently hanging structure.
Step 7, as (g) of Fig. 3, on the molding structure using magnetron sputtering to obtain in step 6, cover layer of metal iridium 8, obtain structure top surface conductive layers, form micro hemispherical resonator gyro, see (a), (b), (c) three structure shown in width figure of Fig. 2.
The material of silicon base 1 of the present invention is that the low resistance with excellent conductive performance mixes silicon (lower than 1 Ω), and hemispherical resonator 2 and the material of plate electrode 3 are the borosilicate glass of alkali metal containing ion.
The theory of surface tension and the glass blowing of pressure-driven micron order is applied to wafer level technique by the present invention.This manufacture method can process complete symmetry (vibration frequency difference Δ f < 1Hz, the frequency sensitivity Δ f of second-order mode
n=2/ f
n=2< 10ppm), the 3-D wineglass formula hemispherical resonator minor structure of atomically flat degree (0.23nm Sa).Micro-glass blowing technique is different from traditional deposition, shaping, etching technics completely, and its principle is: structural sheet glass is subject to surface tension and pressure generation viscous yielding, thus forms hemispherical resonator minor structure.In the viscous yielding process that structural sheet is of short duration, surface tension acts in hemispherical resonator minor structure with atomic energy level, can minimize surfaceness and the degree of imperfection of structure.This glass annealing moulding process far away higher than conventional fabrication processes, have effectively achieved the manufacture of high-precision wafer level hemispherical reso nance gyroscope, and has higher consistance in the surface smoothness and symmetry of structure.
Claims (10)
1. to anneal a shaping micro hemispherical resonator gyro based on borosilicate glass, it is characterized in that comprising silicon base (1), hemispherical resonator (2), centre strut (5) connects hemispherical resonator and silicon base; Be arranged on silicon base (1) to go up and eight plate electrodes (3) be evenly arranged around hemispherical resonator, these eight plate electrodes (3) are four drive electrode (3a, 3c, 3e, 3g) He four detecting electrode (3b, 3d, 3f, 3h) form, all drive electrodes, detecting electrode all do not contact with hemispherical resonator, and drive electrode and detecting electrode are spaced apart successively, are namely detecting electrodes between every two drive electrodes, equally, be a drive electrode between every two detecting electrodes.
2. according to claim 1ly to anneal shaping micro hemispherical resonator gyro based on borosilicate glass, it is characterized in that centre strut (5) is connected with hemispherical resonator subcenter, between hemispherical resonator (2) and eight plate electrodes (3) in silicon base (1), identical gap is set, forms hanging structure.
3. according to claim 2ly to anneal shaping micro hemispherical resonator gyro based on borosilicate glass, it is characterized in that the gap between hemispherical resonator (2) and eight plate electrodes (3) is 80-120 μm.
4. to anneal shaping micro hemispherical resonator gyro based on borosilicate glass according to claim 1,2 or 3, is characterized in that the structure of hemispherical resonator (2) is that 3-D is inverted wineglass formula.
5. the manufacture method of a shaping micro hemispherical resonator gyro of annealing based on borosilicate glass, a silicon chip is it is characterized in that to form silicon base (1) as substrate, silicon chip upper surface etches the centre strut (5) of a circular cylindrical cavity (4) and cavity circle centre position, this centre strut (5) is connected with hemispherical resonator subcenter, forms hanging structure; Simultaneously, peripheral at the circular cylindrical cavity (4) of silicon chip upper surface, and be evenly arranged eight plate electrodes (3) around hemispherical resonator (2), these eight plate electrodes (3) are made up of four drive electrodes and four detecting electrodes, all drive electrodes, detecting electrode do not contact with hemispherical resonator (2), there is identical gap, and drive electrode and detecting electrode are spaced apart successively.
6. the manufacture method of shaping micro hemispherical resonator gyro of annealing based on borosilicate glass according to claim 5, is characterized in that concrete steps are as follows:
Step 1, silicon base (1) using Silicon Wafer as hemispherical reso nance gyroscope, photoetching technique is utilized to form circular cylindrical cavity and centre strut figure at Silicon Wafer upper surface, then ICP lithographic technique deep etching circular cylindrical cavity (4) and centre strut (5) is used, cleaning is afterwards removed photoresist, and peels off unnecessary metal;
Step 2, by borosilicate glass wafer (6) pre-treatment under equipment for burning-off photoresist by plasma environment, circular cylindrical cavity (4) periphery and the centre strut (5) of borosilicate glass wafer (6) and Silicon Wafer (1) carry out anode linkage, and in circular cylindrical cavity (4), sealed inert gas is to 1atm;
Step 3, the wafer after cleaning bonding, magnetron sputtering Ti, then uses electric plating method plated metal as mask, in electroplating process, heats to reduce unrelieved stress to substrate; After having electroplated mask, utilize photoetching technique graphical in mask surface, the wafer after photoetching is placed in water bath with thermostatic control, use the mixed solution wet etching mask of dust technology and glacial acetic acid;
Step 4, use plasma oxide dry etching technology to the glassy layer deep etching of the wafer after wet etching mask, form the harmonic oscillator part (2a) of glassy layer unit and plate electrode (3) part, then cleaning is removed photoresist, and uses the remaining mask of mixed solution wet etching of dust technology and glacial acetic acid;
Step 5, under quick anneal oven hot environment, the harmonic oscillator part (2a) of glassy layer unit is subject to surface tension and chamber pressure generation viscous yielding, and the crystal column surface obtained in step 4 forms hemispherical resonator (2), and is cooled to room temperature rapidly;
Step 6, uses XeF
2gas attack silicon base (1) forms cavity (7), releases hemispherical resonator (2) and the bond area of silicon base (1), forms independently hanging structure;
Step 7, on the molding structure using magnetron sputtering to obtain in step 6, covers layer of metal iridium (8), forms micro hemispherical resonator gyro.
7. the manufacture method of the shaping micro hemispherical resonator gyro of annealing based on borosilicate glass according to claim 5 or 6, it is characterized in that the material of silicon base (1) is that low resistance mixes silicon, hemispherical resonator (2) and the material of plate electrode (3) are the borosilicate glass of alkali metal containing ion.
8. the manufacture method of shaping micro hemispherical resonator gyro of annealing based on borosilicate glass according to claim 6, it is characterized in that in step 4, using plasma oxide dry etching technology, etching parameters arranges as follows: C3F8-30sccm, Ar-90sccm is as etching gas, counterbalance Physicochemical etches, and ensures that etched surface is more smooth; O
2-90sccm is plasma cleaning gas, low pressure 3mT is set, electromagnetic power 1500W, bias power 50W, etch rate is made to reach 0.8 μm/min, and the depth-to-width ratio that can obtain close to 8: 1, ensure that the etching precision of control electrode and hemispherical resonator electric capacity spacing simultaneously, obtain complete, level and smooth etched edge.
9. the manufacture method of shaping micro hemispherical resonator gyro of annealing based on borosilicate glass according to claim 6, is characterized in that in step 4, and the glassy layer deep etching degree of depth of wafer is 90 ~ 100 μm.
10. the manufacture method of shaping micro hemispherical resonator gyro of annealing based on borosilicate glass according to claim 6, is characterized in that the temperature of the quick anneal oven hot environment in step 5 is 800-900 DEG C.
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| CN105540530A (en) * | 2015-12-18 | 2016-05-04 | 东南大学 | Micro-glass hemispherical resonator gyro and wafer level preparation method thereof |
| CN105540530B (en) * | 2015-12-18 | 2017-03-15 | 东南大学 | Micro- glass dome resonant gyroscope and its wafer level preparation method |
| CN108883927A (en) * | 2016-02-29 | 2018-11-23 | 密执安州立大学董事会 | Assembling process for three-dimensional microstructures |
| CN106441258A (en) * | 2016-09-09 | 2017-02-22 | 东南大学 | Micro-shell resonator and harmonic oscillator preparation method thereof |
| CN106441258B (en) * | 2016-09-09 | 2019-07-26 | 东南大学 | Micro- case resonant device and its harmonic oscillator preparation method |
| CN111238461A (en) * | 2020-03-09 | 2020-06-05 | 中国建筑材料科学研究总院有限公司 | Harmonic oscillator and preparation method thereof |
| CN111960380A (en) * | 2020-08-27 | 2020-11-20 | 中国电子科技集团公司第二十六研究所 | Process method for realizing micro-gap assembly based on temporary suspension beam structure |
| CN112414389A (en) * | 2020-11-20 | 2021-02-26 | 中国电子科技集团公司第二十六研究所 | Harmonic oscillator of hemispherical resonator gyroscope and signal acquisition structure thereof |
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| CN105424019A (en) | 2016-03-23 |
| CN105424019B (en) | 2019-01-18 |
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