CN107055457A - A kind of micro- half spherical top sensitive structure of vitreous silica - Google Patents
A kind of micro- half spherical top sensitive structure of vitreous silica Download PDFInfo
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- CN107055457A CN107055457A CN201611139812.XA CN201611139812A CN107055457A CN 107055457 A CN107055457 A CN 107055457A CN 201611139812 A CN201611139812 A CN 201611139812A CN 107055457 A CN107055457 A CN 107055457A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
Abstract
The invention belongs to inertial survey technique field, it is related to a kind of micro- half spherical top, and in particular to a kind of micro- half spherical top sensitive structure of vitreous silica；The structure includes dome-type harmonic oscillator and base；Hemispherical harmonic oscillator includes Loadings On Hemispherical Shell and central support posts；Central support posts one end is arranged on Loadings On Hemispherical Shell intrados center top, and central support posts support Loadings On Hemispherical Shell is tipped upside down on above base, and Loadings On Hemispherical Shell shell wall lower edge is not contacted with base；Loadings On Hemispherical Shell inner surface and its shell wall lower edge and central support posts surface set case electrode；Base upper surface is uniform, the multiple multiple base bias electrodes being connected from face driving/detecting electrode and with case electrode of scattering device；Set location from face driving/detecting electrode is corresponding along case electrode with Loadings On Hemispherical Shell shell wall, and from face driving/there is gap between detecting electrode and case electrode；Energy loss of the present invention is relatively low, angle gain is big, sensitivity is high, while having stronger anti shock and vibration ability.
Description
Technical field
The invention belongs to inertial survey technique field, it is related to a kind of micro- half spherical top, and in particular to a kind of vitreous silica is micro-
Half spherical top sensitive structure.
Background technology
Gyro be it is a kind of be used for sensitive carrier relative to the instrument of inertial space angular movement, be Inertial Navigation and Guidance system
Core devices.
Microelectromechanicgyroscope gyroscope is the inertia type instrument manufactured based on microelectronics and micromechanical process, relatively conventional electromechanical top
Spiral shell, optical gyroscope etc. have volume weight small power consumption, integrated level height, anti-adverse environment, low cost and other advantages.
Micro- half spherical top is a kind of new microelectromechanicgyroscope gyroscope that conventional hemispherical gyro is miniaturized, and it is former that it is based on solid fluctuation
Reason, with features such as holohedral symmetry, high-quality-factors, possesses higher precision relative to microelectromechanicgyroscope gyroscopes such as tuning-fork-type, butterfly-type and dives
Can, while when being exported using speed integral mode, the higher linearity and bigger dynamic range can be obtained.
Half spherical top micro- compared to silicon substrate, micro- half spherical top of vitreous silica damps lower, energy because of the thermoelastic of its harmonic oscillator material
It is enough to obtain higher quality factor, be conducive to improving mechanical gain, so as to greatly improve Gyro Precision；While vitreous silica resonance
Son can be using blow molding process shaping, and relative to silicon substrate MEMS technology, machining accuracy is higher, and vibration surface of shell is more smooth, loss
It is smaller.
The conventional micro- half spherical top sensitive structure of vitreous silica mainly has following several patterns.
Fig. 1 show a kind of bird-nest type solid support resonance minor structure, and Fig. 2 show a kind of bird-nest type hollow support resonance
Minor structure, Fig. 3 show a kind of dome-type edge supports resonance minor structure, and Fig. 4 show a kind of short support harmonic oscillator of dome-type
Structure.
Above-mentioned resonance minor structure is primarily present problems with：
1) harmonic oscillator structure height shown in Fig. 1 and Fig. 2/radius ratio is small, angle gain is relatively low, at the same structure integral rigidity compared with
Low, impact resistance is not enough.
2) the anchor region of harmonic oscillator shown in Fig. 3 and Fig. 4 is located at housing surrounding edge and housing bottom center respectively, directly
The vibration of limitation harmonic oscillator is connect, the energy loss of fixed anchor point is bigger than normal.
3) as shown in figure 5, for realize harmonic oscillator motion excitation and detect signal extraction, above-mentioned resonance minor structure
Circumferentially shape is evenly distributed on the outside of harmonic oscillator driving/detecting electrode more than 43, and the pattern of electrode is complicated three-dimension curved surface, and then
Cause the control difficulty of pole plate gap error and homogeneity error larger.
The content of the invention
For above-mentioned prior art, it is an object of the invention to provide a kind of micro- half spherical top sensitive structure of vitreous silica,
Electrode gap error and the unmanageable shortcoming of homogeneity error in radial drive mode present in prior art are solved, and is dropped
Low energy loss.
In order to achieve the above object, the present invention uses following technical scheme.
It is an object of the invention to provide a kind of micro- half spherical top sensitive structure of vitreous silica, the structure includes；Dome-type
Harmonic oscillator and base；
Hemispherical harmonic oscillator is axially symmetric structure, including Loadings On Hemispherical Shell and central support posts；Central support posts one end is set
In Loadings On Hemispherical Shell intrados center top, the central support posts other end is arranged on base, central support posts support Loadings On Hemispherical Shell
Tip upside down on above base, Loadings On Hemispherical Shell shell wall lower edge is not contacted with base；
Loadings On Hemispherical Shell inner surface and its shell wall lower edge and central support posts surface set case electrode；
Base upper surface is uniform, scattering device it is multiple be connected from face driving/detecting electrode and with case electrode it is multiple
Base bias electrode；
Set location from face driving/detecting electrode is corresponding along case electrode with Loadings On Hemispherical Shell shell wall, and from face
Driving/there is gap between detecting electrode and case electrode.
Further, described dome-type harmonic oscillator is tipped upside down on above base, by central support posts and base at anchor point
Bonding connection.
Further, described base bias electrode be arranged on two it is adjacent between face driving/detecting electrode；
The setting quantity from face driving/detecting electrode is configured as needed, sets the integral multiple that quantity is 2,
And set quantity to be no less than 8.
Further, the Loadings On Hemispherical Shell of the dome-type harmonic oscillator is dome-type.
Further, the case electrode, the material from face driving/detecting electrode and base bias electrode are chromium and gold, chromium
Layer is arranged on dome-type harmonic oscillator and susceptor surface, and layer gold is arranged in layers of chrome.
A kind of technique for manufacturing the micro- half spherical top sensitive structure of a kind of vitreous silica described above, the technique includes following
Step：
Step 1: mould prepares；
Mould includes upper mould and lower mould, and mold materials are graphite；
Upper mould is machined with the type face matched with Loadings On Hemispherical Shell intrados, and type face center highest point is convex less than surrounding
Side, type face center, which is machined with the through hole matched with central support posts, type face bottom surrounding edge extension, is machined with multiple lead to
Hole；
Upper mould is arranged on lower mould, the through hole of upper moulding surface of forming mould center processing and type face bottom four
The multiple through holes processed at all edge extensions, correspondence position is also machined with identical through hole on lower mould；
Through hole and the corresponding through hole of lower mould that central support posts are processed through upper moulding surface of forming mould center, and in
Heart support column passes the central highest point in type face, and vitreous silica substrate is arranged on the upper surface of mould；
Step 2: thermal-flame is molded；
Vitreous silica substrate upper surface is heated using firing equipment, temperature is not less than the softening point temperature of vitreous silica；
Step 3: separation；
Resonance minor structure after step 2 is molded is separated with mould；
Step 4: release；
The harmonic oscillator that step 3 is obtained is fixed in fixture by polymer, carrying out structure using grinding and polishing mode releases
Put；
Step 5: cleaning；
The polymer of residual in the structure is removed to the hemispherical resonance minor structure after grinding and polishing；
Step 6: metal deposit；
Conductive layer is deposited using the inner surface of hemispherical resonance minor structure of the coating process after grinding and polishing, conductive layer is
For case electrode；
Step 7: the processing of metal anchor point and base electrode；
On base, metal anchor point is processed, from face driving/detection electricity using photoetching corrosion and the patterned method of lead
Pole and base bias electrode；
Step 8: integrated；
Using bonding technology, metal anchors point in the central support posts and base of dome-type harmonic oscillator is carried out to integrated, formation
The micro- half spherical top sensitive structure of complete vitreous silica.
Further, in the thermal-flame forming step described in step 2, the upper and lower of vitreous silica substrate is adjusted by through hole
The pressure differential on surface, control molding rate, the thickness parameter of Loadings On Hemispherical Shell, realizes shaping and the central support posts of Loadings On Hemispherical Shell
With the connection of Loadings On Hemispherical Shell.
Further, the case electrode, the material from face driving/detecting electrode and base bias electrode are chromium and gold, chromium
Layer is first deposited on dome-type harmonic oscillator and susceptor surface, and layer gold redeposition is in layers of chrome.
Further, described in step 7 in metal anchor point and the procedure of processing of base electrode, metal anchors are adjusted as needed
Point and the difference in height from face driving/between detecting electrode and base bias electrode, realize to being driven from face/detecting electrode and housing
The control in gap between electrode.
Further, the Loadings On Hemispherical Shell of the dome-type harmonic oscillator is dome-type.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
1) a kind of harmonic oscillator housing of the micro- half spherical top sensitive structure of vitreous silica of the invention is dome-type, its height/half
Footpath ratio is approximately equal to 1, and angle gain is big, sensitivity is high, while having stronger anti shock and vibration ability.
2) a kind of resonance subcenter of the micro- half spherical top sensitive structure of vitreous silica of the invention uses long solid support post knot
Structure, support pole length ratio of rigidity is larger, and anchor point is located at long side of the solid support post away from housing, reduces as far as possible to harmonic oscillator
The influence of housing motion, energy loss is relatively low.
3) a kind of micro- half spherical top sensitive structure of vitreous silica of the invention drives the configuration of detection using edge ring cloth from face
Pattern, the electrode type being distributed compared to excircle, electrode gap can accurately be controlled by MEMS planar technologies, overcome footpath
Into type of drive 3 D complex pattern electrode be difficult to, electrode gap error and the unmanageable shortcoming of homogeneity error.
Brief description of the drawings
Fig. 1 is a kind of bird-nest type solid support harmonic oscillator structural section figure of prior art；
Fig. 2 is a kind of bird-nest type hollow support harmonic oscillator structural section figure of prior art；
Fig. 3 is a kind of dome-type edge supports harmonic oscillator structural section figure of prior art；
Fig. 4 is a kind of short support harmonic oscillator structural section figure of dome-type of prior art；
Fig. 5 is a kind of harmonic oscillator driving/detecting electrode schematic diagram of excircle distribution of prior art；
Fig. 6 is a kind of corresponding micro- half spherical top sensitive structure sectional view of vitreous silica of the present invention；
Fig. 7 is a kind of corresponding micro- half spherical top sensitive structure schematic three dimensional views of vitreous silica of the present invention；
Fig. 8 is a kind of corresponding micro- half spherical top sensitive structure schematic three dimensional views of vitreous silica of the present invention；
Fig. 9 is a kind of harmonic oscillator driving/detecting electrode schematic diagram of the corresponding edge ring cloth of the present invention；
Figure 10 is that the mould in prepared by corresponding sensitive structure of the invention prepares diagrammatic cross-section；
Figure 11 is the thermal-flame shaping diagrammatic cross-section in prepared by the corresponding sensitive knot of the present invention；
Figure 12 is that the harmonic oscillator in prepared by the corresponding sensitive knot of the present invention separates diagrammatic cross-section with mould；
Figure 13 is the harmonic oscillator release diagrammatic cross-section in prepared by the corresponding sensitive knot of the present invention；
Figure 14 is the diagrammatic cross-section after the harmonic oscillator cleaning in prepared by the corresponding sensitive knot of the present invention；
Figure 15 is the diagrammatic cross-section of the harmonic oscillator surface electrode in prepared by the corresponding sensitive knot of the present invention；
Figure 16 is the diagrammatic cross-section of the base processing in prepared by the corresponding sensitive knot of the present invention；
Figure 17 is harmonic oscillator and the integrated diagrammatic cross-section of base in prepared by the corresponding sensitive knot of the present invention；
In figure：11- bird-nest type solid support harmonic oscillators, 12- anchor points, 21- bird-nest type hollow support harmonic oscillators, 22- anchor points,
31- dome-type edge supports harmonic oscillators, 32- anchor points, the short support harmonic oscillator of 41- dome-types, 42- anchor points, the driving of 43- excircles/
Detecting electrode, 51- dome-type harmonic oscillators, 511- Loadings On Hemispherical Shells, 512- central support posts, 513- case electrodes, 52- metal anchors
Point, 53- bases, 531- is from face driving/detecting electrode, 532- base bias electrodes, 54- vitreous silica substrates, the upper shaping moulds of 61-
Mould, 63- through holes, 71- fixtures, 72- polymer under tool, 62-.
Embodiment
A kind of micro- half spherical top sensitive structure of vitreous silica of the invention is elaborated with reference to embodiment.
As shown in Figure 6 to 8, the micro- half spherical top sensitive structure of a kind of vitreous silica of the invention, including；Dome-type harmonic oscillator
51 and base 53；Dome-type harmonic oscillator 51 is arranged on base 53；
Hemispherical harmonic oscillator 51 is axially symmetric structure, including Loadings On Hemispherical Shell 511 and central support posts 512；Central support posts
512 one end are arranged on the intrados center top of Loadings On Hemispherical Shell 511, and the other end of central support posts 512 is arranged on base 53, center
The support back-off of Loadings On Hemispherical Shell 511 of support column 512 (Open Side Down for intrados) is in the top of base 53, the shell wall lower edge of Loadings On Hemispherical Shell 511
Do not contacted with base 53；
The inner surface of Loadings On Hemispherical Shell 511 and its shell wall lower edge and the surface of central support posts 512 one layer of electric conductivity of uniform plating
Metal, this layer of conductive metal constitutes case electrode 513；
Dome-type harmonic oscillator 51 tips upside down on the top of base 53, is realized by central support posts 512 and base at anchor point 52
Connection；
The upper surface of base 53 is uniform, scattering device it is multiple from face driving/detecting electrode 531 and with the phase of case electrode 513
Multiple base bias electrodes 532 even；
Base bias electrode 532 be generally located on two it is adjacent between face driving/detecting electrode 531；
Set location from face driving/detecting electrode 531 is corresponding along case electrode 513 with the shell wall of Loadings On Hemispherical Shell 511,
And from face driving/there is gap between detecting electrode 531 and case electrode 513, gap keeps uniformity in all directions
And uniformity, the setting quantity from face driving/detecting electrode 531 can be configured as needed, set the integer that quantity is 2
Times, and set quantity to be no less than 8.
It is preferred that the Loadings On Hemispherical Shell 511 of dome-type harmonic oscillator 51 is dome-type, its height/radius ratio is approximately equal to 1, angle gain
Greatly, sensitivity is high, while having stronger anti shock and vibration ability；The center of dome-type harmonic oscillator 51 uses long solid support post knot
Structure, support pole length ratio of rigidity is larger, and anchor point is located at long side of the solid support post away from housing, reduces as far as possible to harmonic oscillator
The influence of housing motion, energy loss is relatively low.
In addition, as shown in figure 9, by the electrode that excircle is distributed be changed to edge ring cloth from face drive detection configuration,
Electrode gap can accurately be controlled by MEMS planar technologies, overcome 3 D complex pattern electrode in radial drive mode difficult
With processing, electrode gap error and the unmanageable shortcoming of homogeneity error.
Present invention additionally comprises a kind of manufacturing process for manufacturing the above-mentioned micro- half spherical top sensitive structure of vitreous silica, the technique bag
Include following steps：
Step 1: mould prepares；
As shown in Figure 10, mould includes upper mould 61 and lower mould 62, for the shaping of Loadings On Hemispherical Shell, mould
Material is preferably graphite；
Upper mould 61 is machined with the type face matched with the intrados of Loadings On Hemispherical Shell 511, and type face center highest point is less than
Surrounding chimb, type face center is machined with the through hole matched with central support posts 512, type face bottom surrounding edge extension and processed
There are multiple through holes 63；
Upper mould 61 is arranged on lower mould 62, the through hole of the upper type face of mould 61 center processing and type face
The multiple through holes 63 processed at the surrounding edge extension of bottom, correspondence position is also machined with identical and led on lower mould 62
Hole；
Central support posts 512 are corresponding logical through the through hole and lower mould 62 of the upper type face of mould 61 center processing
Hole, and central support posts 512 pass the central highest point in type face, vitreous silica substrate 54 is arranged on the upper table of mould 61
Face；
Step 2: thermal-flame is molded；
As shown in figure 11, the upper surface of vitreous silica substrate 54 is heated using firing equipments such as blowtorch, temperature is not less than melting
The softening point temperature (1585 DEG C) of quartz, in order to preferably control the parameters such as molding rate, the thickness of Loadings On Hemispherical Shell 511, can lead to
The pressure differential on the upper and lower surface of the regulation vitreous silica of through hole 63 substrate 54 is crossed, shaping and the center branch of Loadings On Hemispherical Shell 511 is realized
The connection of dagger 512 and Loadings On Hemispherical Shell 511；
Step 3: separation；
As shown in figure 12, the resonance minor structure after basic forming is separated with mould；
Step 4: release；
As shown in figure 13, the harmonic oscillator after basic forming is fixed in fixture 71 by polymer 72, thrown using grinding
Light mode carries out structure release；The deformation of the resonance minor structure in polishing process after basic forming can be reduced using polymer 72,
Cause the uniformity and flatness of central support posts 512 and the lower surface of Loadings On Hemispherical Shell 511 in combination with grinding and polishing mode；
Step 5: cleaning；
As shown in figure 14, the polymer of residual in the structure is removed to the structure of hemispherical harmonic oscillator 51 after grinding and polishing
72；
Step 6: metal deposit；
As shown in 15, deposited using the inner surface of hemispherical harmonic oscillator 51 structure of the coating process after grinding and polishing conductive
Layer, conductive layer is the preferable metal material of electric conductivity, and the conductive layer is case electrode 513；
The material of conductive layer is preferably chrome gold, and preferred chromium and both golden materials are successively respectively deposited at hemispherical resonance
The inner surface of sub 51 structures, that is, ensure electric conductivity, associativity, the compactness of conductive layer and surface of shell realized again；
Step 7: the processing of metal anchor point and base electrode；
As shown in figure 16, on base 53, using photoetching corrosion and lead be graphical etc., method processes metal anchor point 52
With base electrode (including drive from face/detecting electrode 531 and base bias electrode 532), the material of anchor point 52 and base electrode
Preferably chrome gold；
The difference in height between metal anchor point 52 and base electrode can be adjusted as needed, and then realizes the essence to pole plate gap
Really control；
Step 8: integrated；
As shown in figure 17, using bonding technology, by metal in the central support posts 512 and base 53 of dome-type harmonic oscillator 51
Anchor point 52 carries out integrated, the complete sensitive structure of formation.
The micro- half spherical top sensitive structure of a kind of vitreous silica described in detail above and its manufacturing process, are not departing from this hair
In bright essential scope, certain deformation or modification can be made to the present invention, its architectural feature is also not necessarily limited to disclosed in example
Content.
Claims (10)
1. a kind of micro- half spherical top sensitive structure of vitreous silica, it is characterised in that the structure includes；Dome-type harmonic oscillator and bottom
Seat；
Hemispherical harmonic oscillator is axially symmetric structure, including Loadings On Hemispherical Shell and central support posts；Central support posts one end is arranged on half
Global shell intrados center top, the central support posts other end is arranged on base, central support posts support Loadings On Hemispherical Shell back-off
Above base, Loadings On Hemispherical Shell shell wall lower edge is not contacted with base；
Loadings On Hemispherical Shell inner surface and its shell wall lower edge and central support posts surface set case electrode；
Base upper surface is uniform, scattering device is multiple from face driving/detecting electrode and the multiple bases being connected with case electrode
Bias electrode；
Set location from face driving/detecting electrode is corresponding along case electrode with Loadings On Hemispherical Shell shell wall, and from face driving/
There is gap between detecting electrode and case electrode.
2. the micro- half spherical top sensitive structure of a kind of vitreous silica according to claim 1, it is characterised in that：Described hemisphere
Type harmonic oscillator is tipped upside down on above base, is bonded and is connected at anchor point with base by central support posts.
3. the micro- half spherical top sensitive structure of a kind of vitreous silica according to claim 1, it is characterised in that：Described base
Bias electrode be arranged on two it is adjacent between face driving/detecting electrode；
The setting quantity from face driving/detecting electrode is configured as needed, sets the integral multiple that quantity is 2, and
Quantity is set to be no less than 8.
4. the micro- half spherical top sensitive structure of a kind of vitreous silica according to claim 1, it is characterised in that：The dome-type
The Loadings On Hemispherical Shell of harmonic oscillator is dome-type.
5. the micro- half spherical top sensitive structure of a kind of vitreous silica according to claim 1, it is characterised in that：The housing electricity
Pole, from the material of face driving/detecting electrode and base bias electrode it is chromium and gold, layers of chrome is arranged on dome-type harmonic oscillator and base
Surface, layer gold is arranged in layers of chrome.
6. a kind of a kind of technique of any described micro- half spherical top sensitive structure of vitreous silica of manufacturing claims 1 to 5, it is special
Levy and be：The technique comprises the following steps：
Step 1: mould prepares；
Mould includes upper mould and lower mould, and mold materials are graphite；
Upper mould is machined with the type face matched with Loadings On Hemispherical Shell intrados, and type face center highest point is less than surrounding chimb,
Type face center is machined with the through hole matched with central support posts, type face bottom surrounding edge extension and is machined with multiple through holes；
Upper mould is arranged on lower mould, the through hole of upper moulding surface of forming mould center processing and type face bottom surrounding
The multiple through holes processed at along extension, correspondence position is also machined with identical through hole on lower mould；
Through hole and the corresponding through hole of lower mould that central support posts are processed through upper moulding surface of forming mould center, and center branch
Dagger passes the central highest point in type face, and vitreous silica substrate is arranged on the upper surface of mould；
Step 2: thermal-flame is molded；
Vitreous silica substrate upper surface is heated using firing equipment, temperature is not less than the softening point temperature of vitreous silica；
Step 3: separation；
Resonance minor structure after step 2 is molded is separated with mould；
Step 4: release；
The harmonic oscillator that step 3 is obtained is fixed in fixture by polymer, structure release is carried out using grinding and polishing mode；
Step 5: cleaning；
The polymer of residual in the structure is removed to the hemispherical resonance minor structure after grinding and polishing；
Step 6: metal deposit；
Conductive layer is deposited using the inner surface of hemispherical resonance minor structure of the coating process after grinding and polishing, conductive layer is shell
Body electrode；
Step 7: the processing of metal anchor point and base electrode；
On base, metal anchor point is processed using photoetching corrosion and the patterned method of lead, from face driving/detecting electrode and
Base bias electrode；
Step 8: integrated；
It is using bonding technology, metal anchors point progress in the central support posts and base of dome-type harmonic oscillator is integrated, form complete
The micro- half spherical top sensitive structure of vitreous silica.
7. a kind of manufacturing process of the micro- half spherical top sensitive structure of vitreous silica according to claim 6, it is characterised in that：
In thermal-flame forming step described in step 2, the pressure differential on the upper and lower surface of vitreous silica substrate, control are adjusted by through hole
The thickness parameter of molding rate processed, Loadings On Hemispherical Shell, realizes the shaping of Loadings On Hemispherical Shell and the company of central support posts and Loadings On Hemispherical Shell
Connect.
8. a kind of manufacturing process of the micro- half spherical top sensitive structure of vitreous silica according to claim 6, it is characterised in that：
The case electrode, from the material of face driving/detecting electrode and base bias electrode it is chromium and gold, layers of chrome is first deposited on dome-type
Harmonic oscillator and susceptor surface, layer gold redeposition is in layers of chrome.
9. a kind of manufacturing process of the micro- half spherical top sensitive structure of vitreous silica according to claim 6, it is characterised in that：
Metal anchor point described in step 7 and in the procedure of processing of base electrode, as needed adjustment metal anchor point with from face driving/inspection
The difference in height surveyed between electrode and base bias electrode, realizes to being driven from face/gap between detecting electrode and case electrode
Control.
10. a kind of manufacturing process of the micro- half spherical top sensitive structure of vitreous silica according to claim 6, its feature exists
In：The Loadings On Hemispherical Shell of the dome-type harmonic oscillator is dome-type.
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| CN113686326A (en) * | 2021-08-23 | 2021-11-23 | 中国人民解放军国防科技大学 | Fused quartz micromechanical gyroscope with in-plane sensitive axis and preparation method thereof |
| CN113686326B (en) * | 2021-08-23 | 2024-01-26 | 中国人民解放军国防科技大学 | Fused quartz micromechanical gyroscope with in-plane sensitive axis and preparation method thereof |
| CN114812607B (en) * | 2022-04-15 | 2023-02-07 | 哈尔滨工业大学 | Motion trail generation device for fused quartz hemispherical harmonic oscillator and chemical etching device |
| CN114812607A (en) * | 2022-04-15 | 2022-07-29 | 哈尔滨工业大学 | Motion trail generation device for fused quartz hemispherical harmonic oscillator and chemical etching device |
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| CN117367397A (en) * | 2023-12-07 | 2024-01-09 | 湖南二零八先进科技有限公司 | Preparation method of hemispherical harmonic oscillator |
| CN117367397B (en) * | 2023-12-07 | 2024-02-13 | 湖南二零八先进科技有限公司 | Preparation method of hemispherical harmonic oscillator |
| CN117570951A (en) * | 2024-01-17 | 2024-02-20 | 中国船舶集团有限公司第七〇七研究所 | Resonant gyroscope, mold and blowing method of resonant gyroscope |
| CN117570951B (en) * | 2024-01-17 | 2024-04-05 | 中国船舶集团有限公司第七〇七研究所 | Resonant gyroscope, mold and blowing method of resonant gyroscope |
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