CN105466405B - A kind of hybrid hemispherical resonator gyroscope and its processing technology - Google Patents

A kind of hybrid hemispherical resonator gyroscope and its processing technology Download PDF

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CN105466405B
CN105466405B CN201610008727.3A CN201610008727A CN105466405B CN 105466405 B CN105466405 B CN 105466405B CN 201610008727 A CN201610008727 A CN 201610008727A CN 105466405 B CN105466405 B CN 105466405B
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glass substrate
electrode
upper strata
silicon
lower floor
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CN105466405A (en
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夏敦柱
高海钰
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Southeast University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate

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Abstract

The present invention discloses a kind of hybrid hemispherical resonator gyroscope, belongs to micro electronmechanical and inertial navigation field, its upper strata glass substrate from top to bottom set gradually, electrode layer, silicon structural layer and lower floor's glass substrate；Wherein, circular cavity is provided with the center of upper strata glass substrate, electrode layer and silicon structural layer, hemispherical Shell harmonic oscillator is arranged in circular cavity；Hemispherical Shell harmonic oscillator is fixed in silicon structural layer by support shank；Electrode layer includes the electrode being used cooperatively and peripheral anchor point structure, on upper strata, glass substrate is provided with the electrode hole used with composite electrode and small pad, small pad is distributed on the edge of upper strata glass substrate, and small pad is connected by metal lead wire with the electrode hole in the glass substrate of upper strata respectively；The invention also discloses a kind of processing technology of hybrid hemispherical resonator gyroscope.The gyroscope of the present invention completes Vacuum Package while structure sheaf and glass substrate are carried out into anode linkage, reduces processing step；The processing technology of the present invention, reduces processing cost.

Description

A kind of hybrid hemispherical resonator gyroscope and its processing technology
Technical field
The invention belongs to micro electronmechanical and inertial navigation field, and in particular to a kind of hybrid hemispherical resonator gyroscope and its Processing technology.
Background technology
Dome-type resonator gyroscope is a kind of Ge Shi vibratory gyroscopes, and it not only has higher precision, resolution ratio, reliable The advantages that property and capability of resistance to radiation, and be acknowledged as the most long gyroscope of current service life, it can continuously work 15 More than year and retention property does not change.In addition, its shown advantage in the application of space field is that other gyros can not compare Intend.
The U.S. is the earliest country for developing hemispherical reso nance gyroscope, applies for and obtain the hair of hemispherical reso nance gyroscope first within 1956 Bright patent.Traditional hemispherical reso nance gyroscope is process by vitreous silica, and difficulty of processing is big, and cost is higher, and gyro Volume is larger, has had a strong impact on the extensive use of gyro, it is also difficult to realizes miniaturization.In these years, with space travel task Increasingly long life, complication, the continuous improvement of MEMS technology and electronics level, and hemispherical reso nance gyroscope are shown excellent Gesture so that hemispherical reso nance gyroscope turns into the study hotspot of the domestic and international field scientific research institutions.It is made using MEMS technology Micro- hemispherical reso nance gyroscope has small volume, and cost is low, small power consumption, the advantages that can be mass, is with a wide range of applications.So And because research of the China to hemispherical reso nance gyroscope is started late, and micro-processing technology level is relatively low, and external processing skill Art also has a certain distance.
The content of the invention
Goal of the invention：It is simple and compact for structure it is an object of the invention to provide a kind of hybrid hemispherical resonator gyroscope； It is unaffected in the performance of gyro another object of the present invention is to provide the processing technology of hybrid hemispherical resonator gyroscope In the case of, processing technology as simplified as possible.
Technical scheme：For achieving the above object, the present invention adopts the following technical scheme that：
A kind of hybrid hemispherical resonator gyroscope, including from top to bottom set gradually upper strata glass substrate, electrode layer, Silicon structural layer and lower floor's glass substrate；Wherein, it is provided with circular cavity at the center of upper strata glass substrate, electrode layer and silicon structural layer Body, hemispherical Shell harmonic oscillator are arranged in circular cavity；Described hemispherical Shell harmonic oscillator is fixed in silicon structural layer by support shank； Described electrode layer includes the electrode being used cooperatively and peripheral anchor point structure, is provided with described upper strata glass substrate and matches somebody with somebody composite electrode The electrode hole and small pad used, small pad are distributed on the edge of upper strata glass substrate, small pad respectively by metal lead wire with Electrode hole in the glass substrate of upper strata is connected, wherein, electrode, small pad and electrode hole are respectively 16, and one-to-one corresponding is set Put；An electrode hole for being used for applying hemispherical Shell harmonic oscillator reference voltage is provided with described lower floor's glass substrate, in institute The center for the lower floor's glass substrate stated is provided with circular bond area, and the circular bond area passes through in metal lead wire and lower floor's glass substrate Electrode hole be connected, the electrode hole is connected with big pad, and big pad is arranged on the bottom surface of lower floor's glass substrate.
The bottom of described hemispherical Shell harmonic oscillator is connected with support shank, and the bottom of support shank passes through silicon-glass anode linkage It is connected with the circular bond area at lower floor's glass substrate center, the side wall of support shank is connected with the centre bore of silicon structural layer bottom.
Described small pad is square, and big pad is square metal pad；Described upper strata glass substrate and lower floor's glass Substrate is square, and electrode hole is taper.
A diameter of 1200 ~ 1500 μm of described hemispherical Shell harmonic oscillator, thickness are 1 ~ 5 μm, hemispherical Shell harmonic oscillator and electrode Between gap be 5 ~ 20 μm；The overall dimensions of hemispherical Shell gyroscope are 1200 μm of 3000 μ m, 3000 μ m.
Described electrode layer be made of by LPCVD deposit boron-doping polysilicon, electrode be by electrode layer etch and Into.
A kind of processing technology of hybrid hemispherical resonator gyroscope, comprises the following steps：
1）Prepare hemispherical Shell harmonic oscillator model
Silicon wafer is cleaned, and silicon wafer is thinned to the thickness specified using CMP, it is thermally grown in silicon wafer surface SiO2As mask layer, photoresist is coated, photoetching, SiO is etched using HF2, circular open is exposed to obtain silicon chip；Use SF6Plasma isotropic etching silicon chip, dome-type groove is formed in silicon chip central area, obtains hemispherical Shell resonance submodule Type；
2）Form hemispherical Shell harmonic oscillator and electrode layer
In the photoetching of silicon chip bottom surface, round center hole is etched using ICP techniques so that centre bore penetrates silicon wafer to manufacture support Handle；Photoetching, ICP etchings, form slot electrode, remove photoresist and SiO on silicon chip2；The thermally grown titanium dioxide on silicon chip Silicon, LPCVD polysilicons, are adulterated on silica, annealing, form hemispherical Shell and electrode layer；
3）Form electrode
Resist coating on the polysilicon, using ICP technique etches polycrystalline silicon, form electrode, electrode layer etched after just The electrode that can be separated, remove photoresist；Thermally grown SiO on the polysilicon2As mask layer, resist coating exposure, Development, use the SiO at HF etching capacitance gaps2；Use DRIE SF6/XeF2Isotropic etching, etch away electrode and hemisphere Silicon between shell harmonic oscillator, photoresist is first removed, then remove SiO2；
4）Form circular cavity and electrode hole
Cr/Au or Ti/Au or TiW/Au layers are sputtered in upper strata glass substrate bottom surface as mask, resist coating, exposure, is shown Shadow, with wet etching upper strata glass substrate bottom surface, form circular groove, the circular groove matching step 3）Etch electrode layer and silicon The space that structure sheaf obtains, circular cavity is formed after combination together, remove photoresist and mask layer；On the glass substrate of upper strata Cr/Au or Ti/Au or TiW/Au layers are sputtered as mask, resist coating, exposure, development, wet etching, untill cutting through, Form electrode hole；
5）Pad is prepared, connects metal lead wire
Resist coating, exposure, development, wet etching in upper strata glass substrate front, form square pads groove and signal draws Wire casing, remove photoresist and Cr/Au mask layers；In the glass substrate of upper strata resist coating, exposure, development, splash-proofing sputtering metal chromium and Gold, form small pad and metal lead wire；
Double-faced sputter Cr/Au or Ti/Au or TiW/Au layer is as mask in lower floor's glass substrate, resist coating, exposure, Development, wet etching lower floor glass substrate front, form circular bond area and wire lead slot；In lower floor's glass substrate coated on bottom side photoetching Glue, exposure, development, wet etching, untill cutting through, form electrode lead hole；Remove the photoresist in lower floor's glass substrate With Cr/Au masks, the exposure of coating photoresist, development, double-faced sputter crome metal and gold, formed metal bonding area, metal lead wire and Big pad；
6）Assembled package
Lower floor's glass substrate of structure sheaf silicon wafer and metal lead wire is subjected to silicon-glass anodic bonding；Surpassed using HF Critical seasoning etches SiO2, structure is discharged, to avoid adhesion；By structure sheaf crystal silicon disk and upper strata glass substrate carry out silicon- Glass anode linkage, and carry out Vacuum Package.
Step 2）In, the slot electrode of etching radially defines in silicon chip and is more than one；To strengthen electrode layer and structure The adhesion of layer, prevents from coming off.Step 5）In, the etching depth of slot electrode can adjust so that the height adjustable of electrode.
Step 2）In, described hemispherical Shell harmonic oscillator and electrode layer are made of the polysilicons that boron-doping is deposited by LPCVD； Avoid hemispherical Shell harmonic oscillator and electrode layer deposits at twice, reduce processing step, reduce processing cost.
Step 4）In, deposit Nano getter in described circular groove；To ensure the vacuum of Vacuum Package.
Beneficial effect：Compared with prior art, a kind of hybrid hemispherical resonator gyroscope of the invention, by adding Upper and lower layer glass substrate, there is provided pad and metal lead wire, provided conveniently to apply the extraction of reference voltage and signal； Vacuum Package is completed while structure sheaf and glass substrate are carried out into anode linkage, reduces processing step；The one of the present invention The processing technology of the hybrid hemispherical resonator gyroscope of kind, is to pass through by the hemispherical Shell harmonic oscillator with support shank and electrode layer LPCVD deposit polycrystalline silicon is made simultaneously, avoids hemispherical Shell and electrode layer deposits at twice, reduce processing step, reduce Processing cost.
Brief description of the drawings
Fig. 1 is a kind of structural representation of hybrid hemispherical resonator gyroscope；
Fig. 2 is a kind of top view of hybrid hemispherical resonator gyroscope；
Fig. 3 is sectional views of the Fig. 2 along A-A faces；
Fig. 4 is a kind of processing process figure of hybrid hemispherical resonator gyroscope.
Embodiment
Technical solution of the present invention is described in detail with reference to the accompanying drawings and detailed description, but the guarantor of the present invention Shield scope is not limited to the embodiment.
As Figure 1-3, a kind of hybrid hemispherical resonator gyroscope, including hemispherical Shell harmonic oscillator 1, silicon structural layer 2, electricity Pole layer 3, upper strata glass substrate 4, lower floor's glass substrate 5, electrode 6, peripheral anchor point structure 7, support shank 8, electrode hole 9, small pad 10th, circular bond area 11, big pad 12, metal lead wire 13 and circular cavity 14.Upper strata glass substrate 4 and lower floor's glass substrate 5 Material be PYREX7740.
Hemispherical Shell harmonic oscillator 1 is fixed in silicon structural layer 2 by support shank 8, and electrode layer 3 includes the electrode 6 being used cooperatively With peripheral anchor point structure 7, electrode 6 is 16, and electrode 6 is uniformly distributed around the circumference of hemispherical Shell 1；
Have 16 electrode holes 9 corresponding with even distribution type electrode in upper strata glass substrate 4, for apply driving force and The transmission of the signal such as detection, orthogonal is realized, one is provided with lower floor's glass substrate 5 and is used for applying reference voltage to hemispherical Shell 1 Electrode hole 9.On upper strata, the center of glass substrate 4, electrode layer 3 and silicon structural layer 2 is provided with circular cavity 14, hemispherical Shell harmonic oscillator 1 is arranged in circular cavity 14；Circular cavity 14 is by the circular groove matching step 3 in the glass substrate of upper strata）Etch electrode layer 3 The space obtained with silicon structural layer 2, form circular cavity 14 together by assembled package；Silicon structural layer 2, electrode layer 3 and hemisphere Shell harmonic oscillator 1 belongs to structure sheaf, and circular groove is to etch to form in upper strata glass substrate 4, mainly avoids hemispherical Shell humorous Oscillator and glass substrate collide.
The bottom of hemispherical Shell harmonic oscillator 1 is connected with support shank 8, and the bottom of support shank 8 passes through silicon-glass bonding and lower floor's glass Circular bond area 11 at the center of glass substrate 5 is connected, and the side wall of support shank 8 is connected with the centre bore of the bottom of silicon structural layer 2 so that Hemispherical Shell harmonic oscillator 1 is fixed in silicon structural layer 2.
Small pad 10 is provided with above upper strata glass substrate 4, small pad 10 is square, and small pad 10 is 16, small Pad 10 is four sides for being distributed on square, each small pad 10 by metal lead wire 13 with corresponding upper strata glass substrate 4 Electrode hole 9 be connected；5 positive centre bit of lower floor's glass substrate is equipped with circular bond area 11, and circular bond area 11 passes through metal Lead 13 is connected with electrode hole 9, and electrode hole 9 is connected with the big pad 12 at its back side, and big pad 12 is square metal pad.Upper strata Glass substrate 4 and lower floor's glass substrate 5 are square, and electrode hole 9 is taper.
Electrode layer 3 is made of the polysilicon that boron-doping is deposited by LPCVD, and 16 equally distributed electrodes 6 are by right The etching of electrode layer 3 forms.LPCVD depositions are low-pressure chemical vapor depositions.A diameter of 1200 ~ 1500 μm of hemispherical Shell harmonic oscillator 1, Thickness is 1 ~ 5 μm, and the gap between hemispherical Shell harmonic oscillator 1 and electrode 6 is 5 ~ 20 μm；The overall dimensions of hemispherical Shell gyroscope are 3000μm×3000μm×1200μm。
Such as figure（4）It is shown, Fig. 4（a）~ Fig. 4（k）Corresponding following step 1）-11）.CMP is to chemically-mechanicapolish polish, ICP techniques It is inductively coupled plasma etching, HF is light fluorine acid, and HF is exactly gasified, then etched by HF supercritical dryings.
A kind of processing technology of hybrid hemispherical resonator gyroscope, comprises the following steps：
1）Silicon wafer is cleaned, and silicon wafer is thinned to the thickness specified using CMP, to make structure sheaf；
2）In the thermally grown SiO of structure sheaf silicon face2As mask layer, photoetching simultaneously etches SiO2, in central area opening, make Use SF6Plasma isotropic etching silicon chip, form dome-type groove；
3）In silicon chip back side photoetching, round center hole is etched using ICP techniques so that centre bore penetrates silicon chip QUOTE In order to make support shank；
4）Etched in front side of silicon wafer photoetching, ICP, form slot electrode, remove photoresist and SiO2；
5）In front side of silicon wafer heat growth silicon dioxide, LPCVD polysilicons, adulterate, annealing, form hemispherical Shell and electrode layer, Photoetching simultaneously etches electrode layer, forms electrode；
6）In the thermally grown SiO of front side of silicon wafer2As mask layer, photoetching simultaneously etches SiO2, the opening at capacitance gap, use DRIE SF6/XeF2Isotropic etching, etch away the silicon between electrode and hemispherical Shell；
7）The photoetching of glass substrate reverse side and wet etching upper strata glass substrate reverse side on upper strata, form circular groove, just Face photoetching and wet etching, electrode hole through hole is formed, again gluing, photoetching and wet etching, form square pads groove and signal Wire lead slot；
8）In the front photoetching of lower floor's PYREX7740 substrate of glass and wet etching, circular bond area and wire lead slot are formed, Reverse side photoetching and wet etching, form electrode through hole；
9）The splash-proofing sputtering metal chromium in upper and lower layer glass substrate（Cr）And gold（Au）, formed metal bonding area, signal lead and Pad；
10）Structure sheaf silicon wafer and lower floor's substrate of glass with metal electrode and lead are subjected to si-glass anode Bonding, and use HF etchings SiO2, discharge structure；
11）Structure sheaf crystal silicon disk and upper strata glass substrate are subjected to silicon-glass anode linkage, and carry out Vacuum Package.
Step 4）In, it can radially define and etch more than one slot electrode, to strengthen electrode layer and structure sheaf Adhesion, prevent from coming off.Step 4）In, the etching depth of slot electrode can adjust so that the height adjustable of electrode 6.Step 5） In, hemispherical Shell harmonic oscillator 1 and electrode layer 3 with support shank 8 are made of that the polysilicon of boron-doping is deposited by LPCVD, are avoided Hemispherical Shell 1 and electrode layer 3 deposit at twice, reduce processing step, reduce processing cost.Step 7）In, it can be made Circular groove 14 in deposit Nano getter, to ensure the vacuum of Vacuum Package.

Claims (8)

  1. A kind of 1. processing technology of hybrid hemispherical resonator gyroscope, it is characterised in that：The hybrid hemispherical resonator microthrust test Instrument includes upper strata glass substrate (4), electrode layer (3), silicon structural layer (2) and the lower floor's glass substrate from top to bottom set gradually (5)；Wherein, circular cavity (14), hemisphere are provided with the center of upper strata glass substrate (4), electrode layer (3) and silicon structural layer (2) Shell harmonic oscillator (1) is arranged in circular cavity (14)；Described hemispherical Shell harmonic oscillator (1) is fixed on silicon knot by support shank (8) On structure layer (2)；Described electrode layer (3) includes electrode (6) and the peripheral anchor point structure (7) being used cooperatively, on described upper strata Glass substrate (4) is provided with the electrode hole and small pad (10) used with composite electrode (6), and small pad (10) is distributed on upper strata glass lined The edge at bottom (4), small pad (10) are connected by metal lead wire (13) with the electrode hole in upper strata glass substrate (4) respectively, its In, the electrode hole in electrode (6), small pad (10) and upper strata glass substrate (4) is respectively 16, corresponds and sets； An electrode hole for being used for applying hemispherical Shell harmonic oscillator (1) reference voltage is provided with described lower floor's glass substrate (5), The center of described lower floor's glass substrate (5) is provided with circular bond area (11), and the circular bond area (11) passes through metal lead wire (13) it is connected with the electrode hole in lower floor's glass substrate (5), the electrode hole in lower floor's glass substrate (5) and big pad (12) phase Even, big pad (12) is arranged on the bottom surface of lower floor's glass substrate (5)；
    Its technique comprises the following steps：
    1) hemispherical Shell harmonic oscillator model is prepared
    Silicon wafer is cleaned, and silicon wafer is thinned to the thickness specified using CMP, in the thermally grown SiO of silicon wafer surface2 As mask layer, photoresist is coated, photoetching, SiO is etched using HF supercritical dryings2, circular open is exposed to obtain Silicon chip；Use SF6Plasma isotropic etching silicon chip, dome-type groove is formed in silicon chip central area, obtains hemispherical Shell Harmonic oscillator model；
    2) hemispherical Shell harmonic oscillator and electrode layer are formed
    In the photoetching of silicon chip bottom surface, round center hole is etched using ICP techniques so that centre bore penetrates silicon wafer to manufacture support shank； Photoetching, ICP etchings, form slot electrode, remove photoresist and SiO above silicon chip2；The heat growth silicon dioxide on silicon chip, LPCVD polysilicons on silica, adulterate, annealing, form hemispherical Shell and electrode layer；
    3) electrode is formed
    Resist coating on the polysilicon, using ICP technique etches polycrystalline silicon, form electrode, can after electrode layer has etched The electrode separated, remove photoresist；Thermally grown SiO on the polysilicon2As mask layer, resist coating exposure, develop, Use the SiO at HF supercritical dryings etching capacitance gap2；Use DRIE SF6/XeF2Isotropic etching, etch power down Silicon between pole and hemispherical Shell harmonic oscillator, photoresist is first removed, then remove SiO2；
    4) circular cavity and electrode hole are formed
    Cr/Au or Ti/Au or TiW/Au layers are sputtered in upper strata glass substrate bottom surface as mask, resist coating, exposure, development, With wet etching upper strata glass substrate bottom surface, circular groove, the circular groove matching step 3 are formed) etch electrode layer and silicon knot The space that structure layer obtains, circular cavity is formed after combination together, remove photoresist and mask layer；Splashed on the glass substrate of upper strata Cr/Au or Ti/Au or TiW/Au layers are penetrated as mask, resist coating, exposure, development, wet etching, untill cutting through, shape Into electrode hole；
    5) pad is prepared, connects metal lead wire
    Resist coating, exposure, development, wet etching in upper strata glass substrate front, square pads groove and signal lead groove are formed, Remove photoresist and Cr/Au mask layers；Resist coating, exposure, development, splash-proofing sputtering metal chromium and gold, shape in the glass substrate of upper strata Into small pad and metal lead wire；
    Double-faced sputter Cr/Au or Ti/Au or TiW/Au layer resist coating, exposure, show as mask in lower floor's glass substrate Shadow, wet etching lower floor glass substrate front, form circular bond area and wire lead slot；In lower floor's glass substrate coated on bottom side photoetching Glue, exposure, development, wet etching, untill cutting through, form electrode lead hole；Remove the photoresist in lower floor's glass substrate With Cr/Au masks, the exposure of coating photoresist, development, double-faced sputter crome metal and gold, formed metal bonding area, metal lead wire and Big pad；
    6) assembled package
    Lower floor's glass substrate of structure sheaf silicon wafer and metal lead wire is subjected to silicon-glass anodic bonding；It is overcritical using HF Seasoning etches SiO2, structure is discharged, to avoid adhesion；Structure sheaf crystal silicon disk and upper strata glass substrate are subjected to si-glass Anode linkage, and carry out Vacuum Package.
  2. A kind of 2. processing technology of hybrid hemispherical resonator gyroscope according to claim 1, it is characterised in that：It is described The bottom of hemispherical Shell harmonic oscillator (1) be connected with support shank (8), the bottom of support shank (8) passes through silicon-glass bonding and lower floor Circular bond area (11) at glass substrate (5) center is connected, the side wall of support shank (8) and the center of silicon structural layer (2) bottom Hole is connected.
  3. A kind of 3. processing technology of hybrid hemispherical resonator gyroscope according to claim 1, it is characterised in that：It is described Small pad (10) to be square, big pad (12) is square metal pad；Described upper strata glass substrate (4) and lower floor's glass lined Bottom (5) is square, and the electrode hole in upper strata glass substrate (4) and lower floor's glass substrate (5) is taper.
  4. A kind of 4. processing technology of hybrid hemispherical resonator gyroscope according to claim 1, it is characterised in that：It is described A diameter of 1200~1500 μm of hemispherical Shell harmonic oscillator (1), thickness is 1~5 μm, hemispherical Shell harmonic oscillator (1) and electrode (6) it Between gap be 5~20 μm；The overall dimensions of hemispherical Shell gyroscope are 1200 μm of 3000 μ m, 3000 μ m.
  5. A kind of 5. processing technology of hybrid hemispherical resonator gyroscope according to claim 1, it is characterised in that：It is described Electrode layer (3) be made of by LPCVD deposit boron-doping polysilicon, electrode (6) be by electrode layer (3) etching form.
  6. A kind of 6. processing technology of hybrid hemispherical resonator gyroscope according to claim 1, it is characterised in that：Step 2) in, the slot electrode of etching radially defines in silicon chip and is more than one.
  7. A kind of 7. processing technology of hybrid hemispherical resonator gyroscope according to claim 1, it is characterised in that：Step 2) in, described hemispherical Shell harmonic oscillator and electrode layer are made of the polysilicons that boron-doping is deposited by LPCVD.
  8. A kind of 8. processing technology of hybrid hemispherical resonator gyroscope according to claim 1, it is characterised in that：Step 4) in, Nano getter is deposited in described circular groove.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273522A (en) * 1966-10-14 1972-05-10 Csf Semi-stators for a gyroscope with electrostatic suspension and a method of making the same
CN102449434A (en) * 2009-06-01 2012-05-09 波音公司 Gyroscope packaging assembly
CN102695941A (en) * 2009-11-12 2012-09-26 萨基姆防务安全公司 Gyroscopic sensor
CN104165623A (en) * 2014-08-08 2014-11-26 上海交通大学 Internal-external double-electrode type miniature hemispherical resonance gyroscope and preparation method thereof
CN104913773A (en) * 2015-05-29 2015-09-16 上海交通大学 Semi-spherical micro gyroscope packaging structure and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273522A (en) * 1966-10-14 1972-05-10 Csf Semi-stators for a gyroscope with electrostatic suspension and a method of making the same
CN102449434A (en) * 2009-06-01 2012-05-09 波音公司 Gyroscope packaging assembly
CN102695941A (en) * 2009-11-12 2012-09-26 萨基姆防务安全公司 Gyroscopic sensor
CN104165623A (en) * 2014-08-08 2014-11-26 上海交通大学 Internal-external double-electrode type miniature hemispherical resonance gyroscope and preparation method thereof
CN104913773A (en) * 2015-05-29 2015-09-16 上海交通大学 Semi-spherical micro gyroscope packaging structure and preparation method thereof

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