CN102500908A - Welding method of tungsten target assembly - Google Patents
Welding method of tungsten target assembly Download PDFInfo
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- CN102500908A CN102500908A CN2011103209674A CN201110320967A CN102500908A CN 102500908 A CN102500908 A CN 102500908A CN 2011103209674 A CN2011103209674 A CN 2011103209674A CN 201110320967 A CN201110320967 A CN 201110320967A CN 102500908 A CN102500908 A CN 102500908A
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Abstract
The invention provides a welding method of a tungsten target assembly, which comprises the following steps of: providing a tungsten target blank and a copper back plate between which an intermediate layer is additionally arranged; placing the tungsten target blank, the intermediate layer and the copper back plate in a vacuum sheath, so that the intermediate layer is positioned between the tungsten target blank and the copper back plate, and the vacuum sheath is placed in welding equipment; welding materials to be welded together by a hot isostatic pressing process to form the tungsten target assembly; and after the ompletion of welding, carrying out cooling, and removing the vacuum sheath to obtain the tungsten target assembly. By additionally arranging the intermediate layer between the tungsten target blank and the copper back plate and welding the tungsten target blank and the copper back plate together by utilizing the hot isostatic pressing process, the large-area welding can be realized, and the surface of the welding material can be prevented from being oxidized because the whole welding process is in a vacuum environment; and in addition, in the formed tungsten target assembly, the bond rate and the bond strength of the tungsten target blank and the copper back plate are higher, and the deformation is small after the tungsten target blank and the copper back plate are welded together.
Description
Technical field
The present invention relates to the semiconductor sputtering target material and make the field, relate in particular to a kind of welding method of tungsten target material assembly.
Background technology
In semi-conductor industry, target material assembly is to be made up of the target that meets sputtering performance and the backboard that can combine and have certain intensity with said target.Backboard can be assembled in the sputter base station at said target material assembly and play a supporting role, and has the effect of conduction heat.For example, can select for use tungsten (Co), select for use to have sufficient intensity as target, and the also higher copper of heat conduction, electric conductivity or Cu alloy material as backboard to form target material assembly.
In sputter procedure, the residing working environment of target material assembly is more abominable.For example, the residing environment temperature of target material assembly is higher, for example 300 ℃ to 600 ℃; In addition, a side blow of target material assembly is cold by force with cooling water, and opposite side then is in 10
-9Under the high vacuum environment of Pa, relative two sides at target material assembly are formed with huge pressure differential thus; Have, target material assembly is in high voltage electric field, the magnetic field again, receives the bombardment of various particles.Under rugged environment like this; If the bond strength in the target material assembly between target and the backboard is relatively poor; To cause target material assembly under heating condition, to be out of shape, to ftracture and come off mutually with the backboard that combines; Make sputter can't reach the sputter effect of uniform, also may cause damage simultaneously the sputter base station.
Therefore, select a kind of effective welding manner to make target and backboard realize that reliable connection and steady in a long-term production of realization just seem very necessary.
When the physical properties such as fusing point of target and backboard are close, can adopt conventional for example melting welding of welding procedure, soldering that target and backboard are welded together to form target material assembly; When the physical properties such as fusing point of target and backboard differ greatly, can adopt Diffusion Welding that target and backboard are welded together to form target material assembly.So-called Diffusion Welding is meant weldment fitted tightly, and under uniform temperature and pressure, keeps a period of time, makes atom between the two weldment contact-making surfaces diffuse to form the welding method of connection each other.With respect to the welding manner of routine, Diffusion Welding has the bonding tightness height, the advantages such as non-deformability is strong of being heated.
For the target material assembly of tungsten target material and copper backboard formation; Because the fusing point of tungsten is 3407 ℃; Existing melting welding equipment can not be realized the large tracts of land butt welding when 1084 ℃ of the fusing points of copper, the fusing point of two kinds of materials differed than Datong District, therefore was inappropriate for and utilized melting welding that tungsten target material and copper backboard are welded together; Tin solder that adopts in the soldering processes or indium solder fusing point lower (less than 250 ℃); So that when utilizing soldering that tungsten target material and copper backboard are welded together; Not only between the two bond strength lower (less than 70Mpa), and hot environment can make the solder fusing, causes sputtering technology to carry out; Because tungsten is the more stable metal of character; Copper is to be prone to oxidized metal; Solder side place when airborne temperature surpasses 200 ℃ between tungsten target material and the copper backboard can be oxidized; So that it is relatively poor that the atom at tungsten target material and copper backboard solder side place can not spread the welding tight ness rating that causes target material assembly, therefore, also is inappropriate for and utilizes Diffusion Welding that tungsten target material and backboard are welded together.
Given this, need a kind of new welding method of research so that the tungsten target material can effectively combine with the copper backboard.
Summary of the invention
The problem that the present invention will solve provides the welding method of a kind of tungsten target material blank and copper backboard, and the tungsten target material assembly serviceability temperature that forms through the method is high, and has higher rate, the bond strength of combining between tungsten target material blank and the copper backboard.
For addressing the above problem, the present invention provides a kind of welding method of tungsten target material assembly, comprises following method step:
Tungsten target material blank, copper backboard, intermediate layer are provided;
With said tungsten target material blank, intermediate layer, the copper backboard places in the vacuum canning and make said intermediate layer between said tungsten target material blank and copper backboard, said vacuum canning is placed in the welding equipment;
Utilize heat and other static pressuring processes that said tungsten target material blank, intermediate layer, copper backboard are welded together to form tungsten target material assembly;
After welding is accomplished, after said vacuum canning cooled off, remove said vacuum canning to obtain said tungsten target material assembly.
Optional, place vacuum canning before further comprising the steps of said tungsten target material blank, intermediate layer, copper backboard:
Said tungsten target material blank, copper backboard are carried out machining to improve the binding ability in said tungsten target material blank, copper backboard and intermediate layer;
Again said tungsten target material blank, copper backboard are carried out surface cleaning processing.
Optional, the said heat and other static pressuring processes that utilizes comprises the step that tungsten target material blank, intermediate layer, copper backboard weld together:
Making set inside that the ambient temperature of the vacuum canning of said tungsten target material blank, intermediate layer, copper backboard arranged is that 500 ℃～900 ℃, external environment condition pressure are 50Mpa～160Mpa;
Said vacuum canning to being positioned under said environment temperature, the environmental stress is incubated 3～5 hours so that said tungsten target material blank, intermediate layer, copper backboard are welded together.
Optional; Said tungsten target material blank, intermediate layer, copper backboard are placed the step of again said vacuum canning being sent into welding equipment in the vacuum canning; Said vacuum canning is to be that the low-carbon (LC) steel or stainless steel welding of 1mm～2mm forms by thickness; After placing said tungsten target material blank, intermediate layer, copper backboard in the vacuum canning, said vacuum canning is evacuated to 10
-3Torr～10
-5Torr is again with said vacuum canning sealing.
Optional, the thickness in said intermediate layer is 0.2mm～3mm.
Optional, the material in said intermediate layer is a titanium.
For addressing the above problem, the present invention also provides the welding method of another kind of tungsten target material assembly, may further comprise the steps:
Copper backboard, tungsten target material blank are provided;
On the preparatory mating surface of said tungsten target material blank, form the intermediate layer so that said intermediate layer and said tungsten target material blank form an integral body;
Said tungsten target material blank, the copper backboard that is formed with the intermediate layer placed in the vacuum canning and make said intermediate layer between said tungsten target material blank and copper backboard, said vacuum canning is placed in the welding equipment;
Utilize heat and other static pressuring processes that said tungsten target material blank, the copper backboard that is formed with the intermediate layer welded together to form tungsten target material assembly;
Welding is cooled off said vacuum canning after accomplishing, and removes said vacuum canning to obtain said tungsten target material assembly.
Optional, on the preparatory mating surface of said tungsten target material blank, form the intermediate layer and before said tungsten target material blank is carried out surface cleaning processing.
Optional, said intermediate layer utilizes physical gas-phase deposition to form.
Optional, the said tungsten target material blank that heat and other static pressuring processes will be formed with the intermediate layer, the step that the copper backboard welds together utilized comprises:
Making set inside that the ambient temperature of the vacuum canning of said tungsten target material blank, copper backboard arranged is that 500 ℃～900 ℃, external environment condition pressure are 50Mpa～160Mpa;
Said vacuum canning to being positioned under said environment temperature, the environmental stress is incubated 3～5 hours so that said tungsten target material blank, the copper backboard that is formed with the intermediate layer welded together.
Optional; Said tungsten target material blank, the copper backboard that is formed with the intermediate layer placed the step of again said vacuum canning being sent into welding equipment in the vacuum canning; Said vacuum canning is to be that the low-carbon (LC) steel or stainless steel welding of 1mm～2mm forms by thickness; After placing said tungsten target material blank, copper backboard in the vacuum canning, said vacuum canning is evacuated to 10
-3Torr～10
-5Torr is again with said vacuum canning sealing.
Compared with prior art, the invention has the advantages that:
Through between tungsten target material blank and copper backboard, setting up the intermediate layer and utilizing heat and other static pressuring processes that tungsten target material blank and copper backboard are welded together; Can realize the large tracts of land welding, and because whole welding process is under vacuum environment, to carry out preventing the surperficial oxidized of welding material; In addition, have higher rate, the bond strength of combining in the tungsten target material assembly of formation between tungsten target material blank and the copper backboard, it is little that tungsten target material blank and copper backboard weld together the back distortion; The tungsten target material assembly serviceability temperature that forms can reach more than 600 ℃ the phenomenon that target material assembly can not come off under such hot conditions.
Description of drawings
Fig. 1 is the welding method flow chart of tungsten target material assembly among the welding method embodiment one of tungsten target material assembly of the present invention.
Fig. 2 is the structural representation of tungsten target material assembly part among the welding method embodiment one of tungsten target material assembly of the present invention.
Fig. 3 be among the welding method embodiment one of tungsten target material assembly of the present invention when the preparatory solder side of tungsten target material blank and copper backboard is formed with screw thread its surface topography enlarged drawing.
Fig. 4 places the sketch map when carrying out heat and other static pressuring processes in the vacuum canning when tungsten target material blank, copper backboard, intermediate layer among the welding method embodiment one of tungsten target material assembly of the present invention together.
Fig. 5 is the welding method flow chart of tungsten target material assembly among the welding method embodiment two of tungsten target material assembly of the present invention.
Fig. 6 is the structural representation of tungsten target material assembly part among the welding method embodiment two of tungsten target material assembly of the present invention.
Fig. 7 is that the tungsten target material blank, the copper backboard that are formed with the intermediate layer when the surface among the welding method embodiment two of tungsten target material assembly of the present invention place the sketch map when carrying out heat and other static pressuring processes in the vacuum canning together.
The specific embodiment
Described in background technology; There are many shortcomings in the welding method of existing tungsten target material blank and copper backboard: can not realize the large tracts of land butt welding like welding process; Bond strength in the soldering processes between tungsten target material blank and the copper backboard is low, in the diffusion technology for welding solder side of tungsten target material blank and copper backboard easily in air the oxidized atom that causes tungsten target material blank and copper backboard solder side place can not to spread the welding tight ness rating that causes target material assembly relatively poor or the like.
Heat and other static pressuring processes has many advantages, and is high like combination rate height, the bond strength at weldment faying face place.So-called high temperature insostatic pressing (HIP) (hot isostatic pressing; HIP) principle is that material to be welded is placed in the vacuum-packed vacuum canning; Under hot conditions, utilize highly pressurised liquid or gases at high pressure that vacuum canning is applied each pressure to equalization then, make vacuum canning in this high temperature and high pressure environment, keep a period of time so that material to be welded is closely welded together.Given this; The inventor finds can utilize heat and other static pressuring processes and select suitable technological parameter that tungsten target material and copper backboard are welded together; The solder side place can be not oxidized when both welded under vacuum environment, and tungsten target material blank and copper backboard have higher binding strength between the two after utilizing this technology welding.Further; When the inventor finds to utilize heat and other static pressuring processes welding tungsten target material and copper backboard; The intermediate layer that can between tungsten target material and copper backboard, set up a material and be metal is with as intermediary; Tungsten target material, copper backboard can better combine like this, and for example Titanium can well combine with tungsten target material, copper backboard simultaneously.This intermediate layer can be made formation separately; Also can utilize other method to be formed on and make intermediate layer and tungsten target material blank constitute an integral body on the preparatory mating surface of tungsten target material blank, form said intermediate layer as utilizing physical vapor deposition (PVD) technology commonly used in the semi-conductor industry.
Fig. 1 is the welding method flow chart of tungsten target material assembly among the welding method embodiment one of tungsten target material assembly of the present invention; What it showed is to be the welding process of this target material assembly when making formation separately when the intermediate layer between tungsten target material and the copper backboard; As shown in Figure 1, it may further comprise the steps:
S11., tungsten target material blank, copper backboard, intermediate layer are provided.
S12. tungsten target material blank, copper backboard are carried out machining, again tungsten target material blank, copper backboard are carried out surface cleaning processing.
S13. place tungsten target material blank, intermediate layer, copper backboard in the vacuum canning and make the intermediate layer between tungsten target material blank and copper backboard, be placed in the welding equipment after vacuum canning is vacuumized.
S14. utilize heat and other static pressuring processes that tungsten target material blank, intermediate layer, copper backboard are welded together to form tungsten target material assembly.
S15. after welding is accomplished, vacuum canning is cooled off, remove vacuum canning to obtain tungsten target material assembly.
Fig. 5 is the welding method flow chart of tungsten target material assembly among the welding method embodiment two of tungsten target material assembly of the present invention; What it showed is the welding process of this target material assembly when the intermediate layer between tungsten target material and the copper backboard is formed on the preparatory mating surface of tungsten target material blank; As shown in Figure 5, it may further comprise the steps:
S21., tungsten target material blank, copper backboard are provided.
S22. tungsten target material blank is carried out surface cleaning processing.
S23. on the preparatory mating surface of tungsten target material blank, form the intermediate layer.
Tungsten target material blank, the copper backboard that S24. will be formed with the intermediate layer place in the vacuum canning, are placed in the welding equipment after vacuum canning is vacuumized.
S25. tungsten target material blank, the copper backboard that utilizes heat and other static pressuring processes will be formed with the intermediate layer welds together to form tungsten target material assembly.
S26. after welding is accomplished, vacuum canning is cooled off, remove vacuum canning to obtain tungsten target material assembly.
Do detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.Set forth a lot of details in the following description so that make much of the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not received the restriction of following disclosed specific embodiment.
Embodiment one
Fig. 1 is the welding method flow chart of tungsten target material assembly among the welding method embodiment one of tungsten target material assembly of the present invention; What its showed is the welding process of this target material assembly when the intermediate layer between tungsten target material and the copper backboard is manufacturing formation separately, below Fig. 1 and Fig. 2, Fig. 3, Fig. 4 is combined embodiment one is elaborated.
Execution in step S11 at first: tungsten target material blank, copper backboard, intermediate layer are provided.
Tungsten target material blank 11 is provided, and is that 99.995% tungsten target material blank is an example with purity in the present embodiment.According to the actual requirement of applied environment, sputtering equipment, the shape of tungsten target material blank 11 can be in circle, rectangle, annular, taper shape or other analogous shapes (comprising regular shape and irregularly shaped) any, and preferred version is circular.Its diameter dimension is for adding the allowance of 2mm～5mm on design size, its gauge is for adding the allowance of 1mm～3mm on design size.The purpose that allowance is set is in follow-up machining, to provide well-to-do processing space to obtain satisfactory tungsten target material assembly for tungsten target material blank 11.
Copper backboard 12 is provided, and copper backboard 12 can be the copper alloy backing plate that comprises evanohm or zinc, and copper backboard 12 also can be an one-ton brass, and its shape needs to be provided with according to the requirement of sputtering equipment.
Provide material to be the intermediate layer 13 of metal, as shown in Figure 2, it can be to utilize some conventional processing technologys to make the laminar object of formation separately, can reduce the difficulty of processing and the process-cycle of whole tungsten target material assembly like this.Its shape needs to be provided with according to the shape of tungsten target material blank and copper backboard, so that intermediate layer 13 can be between tungsten target material blank 11 and copper backboard 12.The inventor finds; Material when intermediate layer 13 is a titanium; And when through heat and other static pressuring processes tungsten target material blank 11 and copper backboard 12 being welded together, it can be simultaneously well combines to combine rate, bond strength to increase between tungsten target material blank 11 and the copper backboard 12 with tungsten, copper alloy.Guarantee at the same time to have between tungsten target material blank 11 and the copper backboard 12 under the prerequisite of higher welding requirements that combines rate, bond strength and processing conditions permission, the thickness in intermediate layer can be 0.2mm～3mm.
Follow execution in step S12: tungsten target material blank, copper backboard are carried out machining, again tungsten target material blank, copper backboard are carried out surface cleaning processing.
For tungsten target material blank 11, copper backboard 12 in follow-up heat and other static pressuring processes all can well combine can carry out machining to tungsten target material blank 11, copper backboard 12 to increase the binding ability in tungsten target material blank 11, copper backboard 12 and intermediate layer 13 with intermediate layer 13.Concrete, can carry out the higher machining of machining accuracy to reduce the surface roughness of tungsten target material blank 11, copper backboard 12 preparatory mating surfaces to tungsten target material blank 11, copper backboard 12.Further; In order to make tungsten target material blank 11, copper backboard 12 have better binding ability with intermediate layer 13; As shown in Figure 3; Can also form screw thread at the preparatory mating surface of tungsten target material blank 11, copper backboard 12, the tungsten target material blank 11, the copper backboard 12 that have the shape of threads surface like this can carry out atom diffusion in surface easier and intermediate layer 13, thereby can better combine in heat and other static pressuring processes.
After machining is accomplished, tungsten target material blank 11, copper backboard 12 are carried out surface cleaning processing to reduce or to remove its surperficial impurity.The method of cleaning tungsten target material blank 11, copper backboard 12 has a variety of, and a kind of method wherein is to utilize acid solution earlier and then utilize organic solvent to clean.Acid solution can be selected hydrofluoric acid (HF), nitric acid (HNO
3), hydrochloric acid (HCL), sulfuric acid (H
2SO
4) or comprise the mixed solvent of their any proportionings.Organic solvent can be any in alcohol, isobutanol (IBA), isopropyl alcohol (IPA) or the mixed propyl alcohol (IPB).
Then execution in step S13: tungsten target material blank, intermediate layer, copper backboard are placed in the vacuum canning and make the intermediate layer between tungsten target material blank and copper backboard, be placed in the welding equipment after vacuum canning is vacuumized.
As shown in Figure 4; Tungsten target material blank 11, intermediate layer 13, copper backboard 12 are placed in the vacuum canning 14 and make intermediate layer 13 between tungsten target material blank 11 and copper backboard 12; From the opening of vacuum canning 14 15 vacuum canning 14 is evacuated, oxidation takes place in the weldment surface in heat and other static pressuring processes to avoid.Concrete, vacuum canning 14 is evacuated to 10
-3Torr～10
-5Torr (1 torr=133.3224Pa).Seal opening 15 then to seal whole vacuum canning 14.There is the vacuum canning 14 of tungsten target material blank 11, intermediate layer 13, copper backboard 12 to place in the welding equipment set inside again so that carry out follow-up heat and other static pressuring processes.
The shape of vacuum canning 14 needs be provided with according to the shape that forms tungsten target material assembly in advance, place tungsten target material blank 11, intermediate layer 13, copper backboard 12 in the vacuum canning 14 after, vacuum canning 14 can fit tightly built-in tungsten target material assembly.The very thin thickness of vacuum canning 14 can be 1mm～2mm, and it can be formed by the welding of low-carbon (LC) steel or stainless steel.
Follow execution in step S14: utilize heat and other static pressuring processes that tungsten target material blank, intermediate layer, copper backboard are welded together to form tungsten target material assembly.
Continue with reference to shown in Figure 4, utilize heat and other static pressuring processes that tungsten target material blank 11, intermediate layer 13, copper backboard 12 are welded together to form tungsten target material assembly.At this moment, the inside vacuum canning 14 that is provided with tungsten target material blank 11, intermediate layer 13, copper backboard 12 is in the high temperature and high pressure environment.Through selecting tungsten target material blank and copper backboard in the tungsten target material assembly after suitable technological parameter can make welding to have higher rate, the bond strength of combining; Concrete; The inventor finds to adopt following technological parameter to realize: ambient temperature is 500 ℃～900 ℃; External environment condition pressure is 50Mpa～160Mpa, is incubated 3～5 hours.That is, vacuum canning 14 residing ambient temperature are 500 ℃～900 ℃, utilize highly pressurised liquid or gases at high pressure to make vacuum canning 14 residing external environment condition pressure be 50Mpa～160Mpa, and vacuum canning 14 was kept in this high temperature and high pressure environment 3～5 hours.Because vacuum canning 14 is to be formed by the welding of the low-carbon (LC) steel or stainless steel of very thin thickness; Externally under the effect of environmental stress; Tungsten target material blank 11, copper backboard 12 can form pressure with the faying face place in intermediate layer 13; Because vacuum canning 14 is arranged in hot environment for a long time, plastic deformation, atom diffusion can take place with the faying face place in intermediate layer 13 in tungsten target material blank 11, copper backboard 12, finally realize the reliable soldering of tungsten target material blank 11 and copper backboard 12 simultaneously.
Last execution in step S15: welding is cooled off vacuum canning after accomplishing, and removes vacuum canning to obtain tungsten target material assembly.
Welding can make vacuum canning 14 in air, cool off after accomplishing, and after the cooling, removes vacuum canning 14 to obtain tungsten target material assembly.Concrete, can utilize the turning processing technology that vacuum canning 14 is removed.
Embodiment two
Fig. 5 is the welding method flow chart of tungsten target material assembly among the welding method embodiment two of tungsten target material assembly of the present invention; What its showed is the welding process of this target material assembly when the intermediate layer between tungsten target material and the copper backboard is formed on the preparatory mating surface of tungsten target material blank, below Fig. 5 and Fig. 6, Fig. 7 is combined embodiment two is elaborated.
Execution in step S21 at first: tungsten target material blank, copper backboard are provided.
Tungsten target material blank is provided, and is that 99.995% tungsten target material blank is an example with purity in the present embodiment.According to the actual requirement of applied environment, sputtering equipment, the shape of tungsten target material blank 21 can be in circle, rectangle, annular, taper shape or other analogous shapes (comprising regular shape and irregularly shaped) any, and preferred version is circular.Its diameter dimension is for adding the allowance of 2mm～5mm on design size, its gauge is for adding the allowance of 1mm～3mm on design size.The purpose that allowance is set is in follow-up machining, to provide well-to-do processing space to obtain satisfactory tungsten target material assembly for tungsten target material blank.
Copper backboard 22 is provided, and copper backboard 22 can be the copper alloy backing plate that comprises evanohm or zinc, and copper backboard 22 also can be an one-ton brass, and its shape needs to be provided with according to the requirement of sputtering equipment.
Follow execution in step S22: tungsten target material blank is carried out surface cleaning processing.
The methods on cleaning tungsten target material blank 21 surfaces have multiple, can clean with acid solution earlier, clean with organic solvent again.Acid solution can be chosen hydrofluoric acid (HF), nitric acid (HNO
3), hydrochloric acid (HCL), sulfuric acid (H
2SO
4) or comprise the mixed solvent of their any proportionings.Organic solvent can be any among isobutanol IBA, isopropyl alcohol IPA or the mixed propyl alcohol IPB.
Through the surface cleaning processing of step S22, can impurity and the oxide minimizing or the removing on tungsten target material blank 21 surfaces so just be laid a good foundation for follow-up welding procedure.
Follow execution in step S23: on the preparatory mating surface of tungsten target material blank, form the intermediate layer.
As shown in Figure 6, on the preparatory mating surface 211 of tungsten target material blank 21, forming material is the intermediate layer 23 of metal, and intermediate layer 23 forms an integral body with tungsten target material blank 21 like this.The formation method in intermediate layer 23 has multiple, can utilize physical gas-phase deposition to form.Physical gas-phase deposition mainly is to utilize filament heating back electrons emitted; After electric field acceleration, magnetic field focus on; High-speed impact places the evaporating materials of cold-crucible, makes temperature to be raise the kinetic energy that the surperficial Atomic Absorption electronics of evaporating materials carries rapidly; The low-density that evaporation or distillation form under vacuum environment, non-equilibrium steam particle jet and tungsten target material blank 21 bump against, and are grown to film (being intermediate layer 23) under certain condition.Form technology through the similar film of above-mentioned physical gas-phase deposition or other, can surface roughness be low, bond strength is high, the density advantages of higher so that the intermediate layer 23 that on the preparatory mating surface 211 of tungsten target material blank 21, forms has.The inventor finds; Material when intermediate layer 23 is a titanium; And when through heat and other static pressuring processes tungsten target material blank and copper backboard being welded together, it can be simultaneously well combines to combine rate, bond strength to increase between tungsten target material blank 21 and the copper backboard 22 with tungsten, copper alloy.Guarantee at the same time to have between tungsten target material blank and the copper backboard under the prerequisite of higher welding requirements that combines rate, bond strength and processing conditions permission, the thickness in intermediate layer can be 0.2mm～3mm.
Tungsten target material blank, the copper backboard that S24. will be formed with the intermediate layer place in the vacuum canning, are placed in the welding equipment after vacuum canning is vacuumized.
As shown in Figure 7; The tungsten target material blank 21, the copper backboard 22 that are formed with intermediate layer 23 on the preparatory mating surface 211 are placed in the vacuum canning 24; From the opening of vacuum canning 24 25 vacuum canning 24 is evacuated, oxidation takes place in the weldment surface in heat and other static pressuring processes to avoid.Concrete, vacuum canning 24 is evacuated to 10
-3Torr～10
-5Torr (1 torr=133.3224Pa).Seal opening 25 then to seal whole vacuum canning 24.There is the vacuum canning 24 of tungsten target material blank 21, copper backboard 22 to place in the welding equipment set inside again so that carry out follow-up heat and other static pressuring processes.
The shape of vacuum canning 24 needs be provided with according to the shape that forms tungsten target material assembly in advance, place tungsten target material blank 21, copper backboard 22 in the vacuum canning 24 after, vacuum canning 24 can fit tightly built-in tungsten target material assembly.The very thin thickness of vacuum canning 24 can be 1mm～2mm, and it can be formed by the welding of low-carbon (LC) steel or stainless steel.
Follow execution in step S25: tungsten target material blank, the copper backboard that utilizes heat and other static pressuring processes will be formed with the intermediate layer welds together to form tungsten target material assembly.
Continue with reference to shown in Figure 7, utilize heat and other static pressuring processes that tungsten target material blank 21, the copper backboard 22 that preparatory mating surface 211 is formed with intermediate layer 23 welded together to form tungsten target material assembly.At this moment, the inside vacuum canning 24 that is provided with tungsten target material blank 21, copper backboard 22 is in the high temperature and high pressure environment.Through selecting tungsten target material blank and copper backboard in the tungsten target material assembly after suitable technological parameter can make welding to have higher rate, the bond strength of combining; Concrete; The inventor finds to adopt following technological parameter to realize: ambient temperature is 500 ℃～900 ℃; External environment condition pressure is 50Mpa～160Mpa, is incubated 3～5 hours.That is, vacuum canning 24 residing ambient temperature are 500 ℃～900 ℃, utilize highly pressurised liquid or gases at high pressure to make vacuum canning 24 residing external environment condition pressure be 50Mpa～160Mpa, and vacuum canning 24 was kept in this high temperature and high pressure environment 3～5 hours.Because vacuum canning 24 is to be formed by the welding of the low-carbon (LC) steel or stainless steel of very thin thickness; Externally under the effect of environmental stress; Intermediate layer 23 on the tungsten target material blank 21 preparatory mating surfaces 211 can form pressure with copper backboard 22 faying face places; Because vacuum canning 24 is arranged in hot environment for a long time, plastic deformation, atom diffusion can take place with the faying face place of copper backboard 22 in intermediate layer 23, finally realize the reliable soldering of tungsten target material blank 21 and copper backboard 22 simultaneously.
Last execution in step S26: welding is cooled off vacuum canning after accomplishing, and removes vacuum canning to obtain tungsten target material assembly.
Welding can make vacuum canning 24 in air, cool off after accomplishing, and after the cooling, removes vacuum canning 24 to obtain tungsten target material assembly.Concrete, can utilize the turning processing technology that vacuum canning 24 is removed.
At last; Welding situation to tungsten target material assembly among the foregoing description one and the embodiment two detects: utilize C-SCAN to detect the solder bond rate; The solder bond rate of the tungsten target material assembly of being made up of tungsten target material blank and copper alloy backing plate reaches more than 95%; Test its hot strength again, the mean intensity of its welding is more than the 130Mpa.The tungsten target material assembly serviceability temperature of method formation can reach more than 600 ℃ thus, and the phenomenon that target material assembly can not come off under such hot conditions also can be carried out normal sputtering technology.The result surface adopts the welding performance of the tungsten target material assembly that welding method obtained among the present invention very reliable.
In sum, compared with prior art, the present invention has the following advantages:
Through between tungsten target material blank and copper backboard, setting up the intermediate layer and utilizing heat and other static pressuring processes that tungsten target material blank and copper backboard are welded together; Can realize the large tracts of land welding, and because whole welding process is under vacuum environment, to carry out preventing the surperficial oxidized of welding material; In addition, have higher rate, the bond strength of combining in the tungsten target material assembly of formation between tungsten target material blank and the copper backboard, it is little that tungsten target material blank and copper backboard weld together the back distortion; The tungsten target material assembly serviceability temperature that forms can reach more than 600 ℃ the phenomenon that target material assembly can not come off under such hot conditions.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of technical scheme of the present invention according to technical spirit of the present invention.
Claims (11)
1. the welding method of a tungsten target material assembly is characterized in that, may further comprise the steps:
Tungsten target material blank, copper backboard, intermediate layer are provided;
With said tungsten target material blank, intermediate layer, the copper backboard places in the vacuum canning and make said intermediate layer between said tungsten target material blank and copper backboard, said vacuum canning is placed in the welding equipment;
Utilize heat and other static pressuring processes that said tungsten target material blank, intermediate layer, copper backboard are welded together to form tungsten target material assembly;
After welding is accomplished, after said vacuum canning cooled off, remove said vacuum canning to obtain said tungsten target material assembly.
2. method according to claim 1 is characterized in that, places vacuum canning before further comprising the steps of said tungsten target material blank, intermediate layer, copper backboard:
Said tungsten target material blank, copper backboard are carried out machining to improve the binding ability in said tungsten target material blank, copper backboard and intermediate layer;
Again said tungsten target material blank, copper backboard are carried out surface cleaning processing.
3. method according to claim 1 is characterized in that, the said heat and other static pressuring processes that utilizes comprises the step that tungsten target material blank, intermediate layer, copper backboard weld together:
Making set inside that the ambient temperature of the vacuum canning of said tungsten target material blank, intermediate layer, copper backboard arranged is that 500 ℃～900 ℃, external environment condition pressure are 50Mpa～160Mpa;
Said vacuum canning to being positioned under said environment temperature, the environmental stress is incubated 3～5 hours so that said tungsten target material blank, intermediate layer, copper backboard are welded together.
4. method according to claim 1; It is characterized in that; Said tungsten target material blank, intermediate layer, copper backboard are placed the step of again said vacuum canning being sent into welding equipment in the vacuum canning; Said vacuum canning is to be that the low-carbon (LC) steel or stainless steel welding of 1mm～2mm forms by thickness, place said tungsten target material blank, intermediate layer, copper backboard in the vacuum canning after, said vacuum canning is evacuated to 10
-3Torr～10
-5Torr is again with said vacuum canning sealing.
5. method according to claim 1 is characterized in that, the thickness in said intermediate layer is 0.2mm～3mm.
6. method according to claim 1 is characterized in that, the material in said intermediate layer is a titanium.
7. the welding method of a tungsten target material assembly is characterized in that, may further comprise the steps:
Copper backboard, tungsten target material blank are provided;
On the preparatory mating surface of said tungsten target material blank, form the intermediate layer so that said intermediate layer and said tungsten target material blank form an integral body;
Said tungsten target material blank, the copper backboard that is formed with the intermediate layer placed in the vacuum canning and make said intermediate layer between said tungsten target material blank and copper backboard, said vacuum canning is placed in the welding equipment;
Utilize heat and other static pressuring processes that said tungsten target material blank, the copper backboard that is formed with the intermediate layer welded together to form tungsten target material assembly;
Welding is cooled off said vacuum canning after accomplishing, and removes said vacuum canning to obtain said tungsten target material assembly.
8. method according to claim 7 is characterized in that, on the preparatory mating surface of said tungsten target material blank, forms the intermediate layer and before said tungsten target material blank is carried out surface cleaning processing.
9. method according to claim 7 is characterized in that, said intermediate layer utilizes physical gas-phase deposition to form.
10. method according to claim 7 is characterized in that, the said tungsten target material blank that heat and other static pressuring processes will be formed with the intermediate layer, the step that the copper backboard welds together utilized comprises:
Making set inside that the ambient temperature of the vacuum canning of said tungsten target material blank, copper backboard arranged is that 500 ℃～900 ℃, external environment condition pressure are 50Mpa～160Mpa;
Said vacuum canning to being positioned under said environment temperature, the environmental stress is incubated 3～5 hours so that said tungsten target material blank, the copper backboard that is formed with the intermediate layer welded together.
11. method according to claim 7; It is characterized in that; Said tungsten target material blank, the copper backboard that is formed with the intermediate layer placed the step of again said vacuum canning being sent into welding equipment in the vacuum canning; Said vacuum canning is to be that the low-carbon (LC) steel or stainless steel welding of 1mm～2mm forms by thickness, place said tungsten target material blank, copper backboard in the vacuum canning after, said vacuum canning is evacuated to 10
-3Torr～10
-5Torr is again with said vacuum canning sealing.
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|---|---|---|---|
| CN2011103209674A CN102500908A (en) | 2011-10-20 | 2011-10-20 | Welding method of tungsten target assembly |
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|---|---|---|---|
| CN2011103209674A CN102500908A (en) | 2011-10-20 | 2011-10-20 | Welding method of tungsten target assembly |
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