CN104741775A - Welding method of target component - Google Patents
Welding method of target component Download PDFInfo
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- CN104741775A CN104741775A CN201310754923.1A CN201310754923A CN104741775A CN 104741775 A CN104741775 A CN 104741775A CN 201310754923 A CN201310754923 A CN 201310754923A CN 104741775 A CN104741775 A CN 104741775A
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Abstract
A welding method of a target component includes the steps of providing at least two target component blanks each comprising a backboard and a target disposed in a groove of the backboard; stacking the target component blanks in a vacuum enclosure, and providing a partition between the adjacent target component blanks; putting the vacuum enclosure in a hot isostatic pressure furnace, and welding the target of each target component blank to the corresponding backboard by the hot isostatic pressure process to obtain at least two target components; after welding, cooling the vacuum enclosure, and removing the vacuum enclosure and the partitions to obtain the target components. The welding method has the advantages that the targets and backboards of two target components can be welded in one enclosure to obtain at least two target components, and the target components can be welded more efficiently.
Description
Technical field
The present invention relates to semiconductor sputtering target material and manufacture field, particularly relate to a kind of welding method of target material assembly.
Background technology
In the semiconductor industry, target material assembly is made up of the target meeting sputtering performance, the backboard that is combined with target.Backboard plays a supportive role in target material assembly, and has effect of heat conduction.
In sputter procedure, the working environment residing for target material assembly is more severe.Be specially: the environment temperature residing for target material assembly is higher, such as 300 DEG C to 600 DEG C; In addition, a side blow of target material assembly is cold by force with cooling water, and opposite side is then in 10
-9under the high vacuum environment of Pa, therefore form huge pressure differential in relative two sides of target material assembly; Moreover target material assembly is in high voltage electric field, magnetic field, can be subject to the bombardment of various particle.Under rugged environment like this, if the weld strength in target material assembly between target and backboard is poor, target will be caused to be out of shape under heating condition, ftracture, make sputtering cannot reach the uniform effect of sputtering, time serious, target can come off in backboard and cause damage to sputtering base station.
In prior art, the welding method of a target material assembly is as follows:
With reference to figure 1, provide target 11 and backboard 12.Backboard 12 end face has groove, and described groove is for placing target 11.
Target 11 is placed in the groove of backboard end face, and the junction to be welded of target 11 is contacted with groove floor, form target material assembly blank.Then target material assembly blank entirety is placed in vacuum canning 14, hip treatment is carried out to vacuum canning 14, form target material assembly.
After having welded, jacket cooled and removes, taking out target material assembly.
In prior art, jacket can only be used for the welding of a target material assembly blank, when needs weld multiple target material assembly blank, needs to make multiple jacket, correspondingly in each jacket places a target material assembly blank.Welded after forming target material assembly, also need the jacket on each target material assembly to remove, therefore, the efficiency that welding forms target material assembly is very low.
Summary of the invention
The technical problem to be solved in the present invention is when welding multiple target material assembly blank, and welding forms the inefficiency of target material assembly.
For solving the problems of the technologies described above, the invention provides a kind of welding method of at least two target material assemblies, comprising following methods step:
There is provided at least two target material assembly blanks, each described target material assembly blank comprises backboard and is arranged at the target in backboard groove;
Described at least two target material assembly blanks are stacked in vacuum canning, between adjacent target material assembly blank, there is spacer;
Described vacuum canning is put into high temperature insostatic pressing (HIP) stove, utilizes heat and other static pressuring processes to be welded with backboard by the target in each target material assembly blank, form at least two target material assemblies;
After described welding completes, vacuum canning is cooled, remove jacket and spacer, take out at least two target material assemblies.
Optionally, the material of described spacer is stainless steel substrates or aluminium flake.
Optionally, the thickness of described spacer is for being more than or equal to 0.1mm and being less than or equal to 1mm.
Optionally, the hardness of described target is greater than backboard, and the mask to be welded of described target has projective structure; Or the hardness of described target is less than backboard, described backboard groove floor has projective structure.
Optionally, described its thickness is greater than described depth of groove preset distance, and described preset distance is less than or equal to 1mm.
Optionally, in the plane in vertical thickness direction, the planar dimension of described spacer equals the planar dimension of described backboard.
Optionally, the material of the target of each described target material assembly blank is titanium, and the material of backboard is copper or aluminium;
Utilize heat and other static pressuring processes to be welded with backboard by the target in each target material assembly blank, the step forming at least two target material assemblies comprises:
Make the ambient temperature of described vacuum canning for be more than or equal to 400 DEG C and be less than or equal to 500 DEG C, external environment condition pressure is for being more than or equal to 100Mpa;
The described vacuum canning be positioned under described environment temperature, environmental stress is incubated, pressurize is more than or equal to 3 and is less than or equal to 5 hours.
Optionally, the material of the target of each described target material assembly blank is fine aluminium, and the material of backboard is pure aluminum or aluminum alloy;
Utilize the target in the just each target material assembly blank of heat and other static pressuring processes to weld with backboard, the step forming at least two target material assemblies comprises:
Make the ambient temperature of described vacuum canning for be more than or equal to 150 DEG C and be less than or equal to 200 DEG C, external environment condition pressure is for being more than or equal to 100Mpa;
The described vacuum canning be positioned under described environment temperature, environmental stress is incubated, pressurize is more than or equal to 3 and is less than or equal to 5 hours.
Optionally, the material of the target of each described target material assembly blank is aluminium alloy, and the material of backboard is pure aluminum or aluminum alloy; Or the material of the target of each described target material assembly blank is copper, the material of backboard is fine copper or copper alloy;
Utilize the target in the just each target material assembly blank of heat and other static pressuring processes to weld with backboard, the step forming at least two target material assemblies comprises:
Make the ambient temperature of described vacuum canning for be more than or equal to 250 DEG C and be less than or equal to 350 DEG C, external environment condition pressure is for being more than or equal to 100Mpa;
The described vacuum canning be positioned under described environment temperature, environmental stress is incubated, pressurize is more than or equal to 3 and is less than or equal to 5 hours.
Compared with prior art, the advantage of technical scheme of the present invention is:
At least two target material assembly blanks are stacked in vacuum canning, between adjacent target material assembly blank, there is spacer, follow-up carry out heat and other static pressuring processes time, prevent the backboard in the target material assembly blank of upper strata from welding with the target in lower floor target material assembly blank, thus can realize in a jacket, realize the respective target in two target material assembly blanks and welding between backboard, thus form at least two target material assemblies.And then improve the welding efficiency of target material assembly.
Accompanying drawing explanation
Fig. 1 is the structural representation forming a target material assembly in a jacket of the prior art;
Fig. 2 is the structural representation forming two target material assemblies in a jacket in specific embodiments of the invention;
Fig. 3 is the plane enlarged diagram of the thread protrusion structure that the junction to be welded of target 21 is formed;
Fig. 4 is the cross section enlarged diagram of Fig. 4 along AA direction.
Detailed description of the invention
Present invention obtains a kind of welding method of at least two target material assemblies, to solve the problems of the technologies described above.
Perform step S11, provide at least two target material assembly blanks, each described target material assembly blank comprises backboard and is arranged at the target in backboard groove.
In the present embodiment, with reference to figure 2, provide two target material assembly blanks.For a target material assembly, described target 21 is cylindrical, comprises junction to be welded, the sputter face relative with described junction to be welded and the side between junction to be welded and sputter face.
Described backboard is also cylindrical, and the end face of described backboard 22 has groove, for installing target.
When target 21 is placed in backboard groove, and when the junction to be welded of target contacts with backboard groove floor, the target material assembly blank of formation.
In the present embodiment, if the material of target is titanium, the material of corresponding backboard is copper or aluminium; If the material of target is fine aluminium, the material of corresponding backboard is pure aluminum or aluminum alloy; If the material of target is aluminium alloy, the material of corresponding backboard is pure aluminum or aluminum alloy; If the material of target is copper target, the material of corresponding backboard is fine copper or copper alloy.
It should be noted that, when the hardness of target is greater than the hardness of backboard, projective structure can be formed in the junction to be welded of target, the hardness being less than backboard when the hardness of target is, can form projective structure in backboard groove floor, when the junction to be welded of target contacts with backboard groove floor, described projective structure can increase the junction to be welded of target and the contact area of backboard groove floor, thus in follow-up welding procedure, can weld strength be increased.
Through performing creative labour, find that carrying out machining in the junction to be welded of target 21 or backboard groove floor forms following screw thread projective structure, the solder bond intensity of the target material assembly that target 21 and backboard 22 are formed is the highest, and welding efficiency is also the highest.
Fig. 3 is the plane enlarged diagram of the thread protrusion structure that the junction to be welded of target 21 is formed.Fig. 4 is the cross section enlarged diagram of Fig. 4 along AA direction.Incorporated by reference to reference to figure 3 and Fig. 4, the cross sectional shape of thread protrusion structure is the isosceles triangle that multiple base angle is connected, each triangular form is called tooth form, the thread height H1 of thread pattern is that 0.19mm ~ 0.43mm(comprises end points), the distance W1 on tooth form base is that 0.44mm ~ 0.7mm(comprises end points).Angle between adjacent two tooth form sidewalls is that thread form angle α 1 equals 60 degree, is the groove part of thread pattern between adjacent two tooth forms, and the distance between adjacent two tooth forms is pitch L1 equals 0.44mm ~ 0.7mm(and comprise end points).
Then, perform step S12, described at least two target material assembly blanks are stacked in vacuum canning 24, between the target material assembly blank be connected, there is spacer 23.
The formation method of a target material assembly blank is as follows: target is placed in backboard groove, and by the projective structure of the junction to be welded of target insertion backboard groove floor or the junction to be welded projective structure of backboard groove floor being inserted target.In the present embodiment, described two target material assembly blanks are carried out stacking referring to: between the backboard bottom surface in the target as sputter face of lower floor's target material assembly blank and upper strata target material assembly blank, there is a spacer 23.Each described target material assembly blank measure-alike.
In the present embodiment, spacer 23 is disk, and the diameter of spacer 23 equals backboard 22 diameter.Reason is as follows: if the diameter of spacer 23 is too large, vacuum canning 24 has projective structure at spacer place, and in the process of high temperature insostatic pressing (HIP), the vacuum canning of this position can be damaged; If the diameter of spacer 23 is too little, vacuum canning 24 has sagging structure at spacer place, and in hot isostatic pressing, the same unbalance stress of vacuum canning of this position, equally can be damaged.
According to the material of above-mentioned target and backboard, the material of the spacer 23 in the present embodiment is stainless steel substrates or aluminium flake.Why select the reason of stainless steel substrates or aluminium flake as follows: when welding at least two target material assemblies in vacuum canning 24 simultaneously, spacer 23 can prevent from welding between two target material assembly blanks.Such as, can prevent the sputter face of the target of lower floor's target material assembly blank from welding with bottom the backboard in the target material assembly blank of upper strata, thus multiple target material assembly blank can be realized weld in same jacket simultaneously.And then raising welding efficiency.
In the present embodiment, the thickness of spacer 23 is for being more than or equal to 0.1mm and being less than or equal to 1mm.The thickness of spacer 23 can not be too large, otherwise in follow-up hot isostatic pressing, thicker spacer 23 well can not carry out pressure conduction, thus affects the solder bond intensity between target 21 junction to be welded and groove floor.Certainly, the thickness of spacer 23 can not be too little, otherwise, in follow-up hot isostatic pressing, high temperature insostatic pressing (HIP) pressure can not be born and occur breakage.
It should be noted that the thickness of target can than depth of groove height preset distance, described preset distance is less than or equal to 1mm.If preset distance is greater than 1mm, form target material assembly when this target is mounted in groove, then, when this target material assembly blank placement vacuum canning is carried out high temperature insostatic pressing (HIP), vacuum canning is damaged higher than the edge part branch of backboard at target.
In the present embodiment, acting as of vacuum canning 24 prevents target material assembly blank to be welded to be oxidized in case of heating.It should be noted that, the material of vacuum canning 24 is selected to meet two conditions, and first condition is: the fusing point of vacuum canning 24 is higher than the temperature in subsequent heat process, otherwise vacuum canning can melt in subsequent heat process; Second condition is: in follow-up hot isostatic press welding, and the material of vacuum canning 24 can realize preferably pressure conduction, otherwise affects the welding quality of follow-up target material assembly blank, and in the present embodiment, preferred label is the aluminium jacket of the aluminium plate making of 1060.Why aluminium jacket, be because, for target and the backboard of above-mentioned certain material, the heat of aluminium jacket and the conducting effect of pressure best.The thickness of vacuum canning is 2.5mm ~ 3.0mm.If vacuum canning is too thin, in subsequent soldering processes, easily damaged, cause the phenomenon that target material assembly blank exposes and leaks gas; If vacuum canning is too thick, in follow-up welding process, vacuum canning 24 is not easy to realize pressure conduction.
Vacuum canning can pass through Machine Design, such as CAD, its shape is made to meet the shape of the target material assembly blank of heap poststack, afterwards by seamless tubular goods or sheet material through splicing formation welded together, therefore, vacuum canning can fit tightly the shape of built-in stacking target material assembly blank and the restriction of stacking target material assembly billet size, can the welding of real large-size target assembly blank.Such as, in the present embodiment, vacuum canning is spliced into cylindrical shape by two rounded face and a side, and this rounded face is identical with the area of the bottom surface of backboard, and the side of vacuum canning and the side of aluminium backboard, the side of spacer fit.With reference to figure 2, this vacuum canning generally leaves a hole 25, may be used for drawing deaeration pipe from described vacuum canning, this deaeration pipe is connected with vaccum-pumping equipment.
Then, sealed vacuum jacket stay deaeration pipe.The technique of sealing can be realized by argon arc welding, and vacuum step is completed by deaeration pipe.In the present embodiment, the concrete technology of argon arc welding is: the electric current of argon arc welding is 100 ~ 200A, and argon flow amount is 10 ~ 15L/min.
Then, be connected by vacuum equipment with described deaeration pipe, vacuumize described vacuum canning, vacuum at least reaches 10
-3pa.Then vacuum canning 24 is put into heating furnace and carry out adding preheating, temperature is the first heating temperature range, then starts limit heating edge and vacuumizes, and then carries out insulation 2h ~ 4h(and comprises end points).In described heating and thermal insulation process, need to continue to vacuumize to vacuum canning 24, continue to make the vacuum in vacuum canning 24 at least reach 10
-3pa and keep 10
-3pa.Inventor finds, if heating-up temperature is too low, the foreign gas in vacuum canning is not easy all to evaporate, the target material assembly of follow-up formation is easily oxidized, thus affect the weld strength of the target material assembly of follow-up formation, if described heating-up temperature is too high, the crystallite dimension of target is easily grown up.If described temperature retention time is oversize, increase cost, if described temperature retention time is too short, what vacuum can not continue ensures 10
-3pa, and make that the foreign gas in vacuum canning can not be whole be drawn out of jacket, the follow-up formation solder bond intensity of same impact.
Wherein, first heating-up temperature is relevant with the target material of each described target material assembly blank, the material of the target of each described target material assembly blank is titanium, and the material of backboard is copper or aluminium, and described first heating temperature range is more than or equal to 250 DEG C and is less than or equal to 350 DEG C.The material of the target of each described target material assembly blank is fine aluminium, and the material of backboard is pure aluminum or aluminum alloy, and described predetermined temperature range is more than or equal to 100 DEG C and is less than or equal to 120 DEG C.The material of the target of each described target material assembly blank is aluminium alloy, the material of backboard is pure aluminum or aluminum alloy, or, the material of the target of each described target material assembly blank is copper, the material of backboard is fine copper or copper alloy, and described predetermined temperature range is more than or equal to 200 DEG C and is less than or equal to 250 DEG C.
Then, continuing to hold one's breath technique to vacuum canning under the state keeping vacuum canning inner vacuum, closing by deaeration pipe, making vacuum canning inside form an airtight vacuum environment.Described technique of holding one's breath is realized by machining and welding, in the present embodiment, can be pounded by the afterbody of vacuum canning deaeration pipe flatly then to seal with argon arc welding with iron hammer.After technique of holding one's breath, the vacuum of described vacuum canning is at least 10
-3pa.
The object that limit heating edge continues to vacuumize is, can increase the easness continuing to vacuumize on the one hand, improves the efficiency vacuumized; On the other hand, when carrying out holding one's breath technique under the condition of heating and thermal insulation, deaeration pipe meeting deliquescing, the easier afterbody by deaeration pipe is shut.
Then, perform step S13, described vacuum canning is put into high temperature insostatic pressing (HIP) stove, utilizes heat and other static pressuring processes to be welded with backboard by the target in each target material assembly blank, form at least two target material assemblies;
So-called high temperature insostatic pressing (HIP) (Hot Isostatic Pressing, HIP) utilize highly pressurised liquid or gases at high pressure to apply each pressure to equalization to vacuum canning under the high temperature conditions, make vacuum canning in this high temperature and high pressure environment, keep a period of time closely to be welded together by target material assembly blank.
Now, vacuum canning is in high temperature and high pressure environment.Target 21 and backboard 22 in the target material assembly blank after welding can be made to have higher weld strength by selecting suitable technological parameter, concrete, inventor finds to adopt following technological parameter to realize: the ambient temperature residing for vacuum canning 24 is predetermined temperature range, highly pressurised liquid or gases at high pressure are utilized to make external environment condition pressure residing for vacuum canning 24 for being more than or equal to 100Mpa, further, vacuum canning 24 keeps 3 ~ 5 hours in this high temperature and high pressure environment.
The very thin thickness of vacuum canning 24, under the effect of outside environmental stress, vacuum canning 24 can realize good pressure conduction to make target 21, the junction mineralization pressure each to be welded of backboard 22, simultaneously because vacuum canning 24 is arranged in hot environment for a long time, target 21, plastic deformation and high-temerature creep can be there is and realize the target 21 of small size with the crystal grain between backboard 22 to contact in the junction each to be welded of backboard 22, under continuous effect, crystal grain contact area expands gradually, finally reach place to be welded and can realize crystal grain contact, thus make to form gravitational force between atoms between target atom and backboard atom.
Then there is the phase counterdiffusion between target atom with backboard atom at place to be welded, due to place to be welded the phase counterdiffusion between target atom and backboard atom and many spaces at place to be welded are disappeared, simultaneously, the crystal boundary migration at place to be welded have left home position, even if reach poised state, many little spaces are still had to be retained in place to be welded, cause distortion of lattice, dislocation, the various crystal defect bulk deposition such as room, the junction energy each to be welded at place to be welded enlarges markedly, target atom and backboard atom are in high level activation state, then, the diffusive migration of target atom and backboard atom is very rapid, the very fast formation of the tiny area at place to be welded take target atom-backboard atom metal key as the joint of main type of attachment, but the metallic bond at place to be welded reaches far away homogenising degree, weld strength is not high.
So needing target material assembly blank in ambient temperature is the second heating temperature range, external environment condition pressure be carry out under the condition being more than or equal to 100Mpa being incubated, pressurize 3 ~ 5 hours, to make to treat that the left space of connected components disappears completely, place to be welded is made all to form metallic bond, namely realize the homogenising of metallic bond, increase the weld strength of target material assembly blank.If insulation, dwell time are less than 3 hours, the diffusion of the metallic bond of target material assembly blank can not be made more even, if temperature retention time is greater than 5 hours, target crystalline grains can be caused to grow up, the weld strength of metallic bond can be reduced on the contrary.
If ambient temperature is lower than the minimum of the second heating temperature range, the diffusion of backboard atom or target atom can not be activated; If ambient temperature is higher than the peak of heating temperature range, cause the waste of cost, in addition, the grain growth of target 21 can be made, not meet the requirement of sputtering technology.If temperature continues to raise, target 21 and backboard 22 can be made to melt.If external environment condition pressure is lower than 100Mpa, the diffusion of target atom or backboard atom can not be activated equally; In the scope that welding equipment allows, pressure is more conducive to more greatly the phase counterdiffusion between target atom and the diffusion of backboard atom, and then is more conducive to the carrying out of welding procedure.
It should be noted that: the material of the target of each described target material assembly blank is titanium, the material of backboard is copper or aluminium, and described second heating temperature range is more than or equal to 400 DEG C and is less than or equal to 500 DEG C.The material of the target of each described target material assembly blank is fine aluminium, and the material of backboard is pure aluminum or aluminum alloy, and described second heating temperature range is more than or equal to 150 DEG C and is less than or equal to 200 DEG C.The material of the target of each described target material assembly blank is aluminium alloy, the material of backboard is pure aluminum or aluminum alloy, or, the material of the target of each described target material assembly blank is copper, the material of backboard is fine copper or copper alloy, and described second heating temperature range is more than or equal to 150 DEG C and is less than or equal to 200 DEG C.
In the present embodiment, at least two target material assembly blanks are stacked in vacuum canning, between adjacent target material assembly blank, there is spacer, follow-up carry out heat and other static pressuring processes time, prevent the backboard in the target material assembly blank of upper strata from welding with the target in lower floor target material assembly blank, thus can realize in a jacket, realize the respective target in two target material assembly blanks and welding between backboard, thus form at least two target material assemblies.And then improve the welding efficiency of target material assembly.
In addition, because vacuum canning 24 is not by the restriction such as target size and backboard size, the vacuum canning 24 that large-sized multiple target material assembly blank is housed can be put into high temperature insostatic pressing (HIP) stove, adopt the welding procedure of high temperature insostatic pressing (HIP) namely to apply vacuum canning 24 each to equalization pressure to realize uniform large-area welding under high temperature, condition of high voltage, form large-sized target material assembly.The weld welding rate of described large-sized target material assembly is not high, weld strength is comparatively large and yielding etc.
Then, perform step S15, after described welding completes, vacuum canning is cooled, remove jacket and spacer, take out at least two target material assemblies.
After having welded, vacuum canning 24 can be made to cool in atmosphere, be cooled to less than 200 DEG C, then remove vacuum canning 24 by chemical method or mechanical means, and can manually take off to obtain at least two target material assemblies by spacer.It should be noted that, spacer can reuse.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.
Claims (9)
1. a welding method for target material assembly, is characterized in that, comprises the following steps:
There is provided at least two target material assembly blanks, each described target material assembly blank comprises backboard and is arranged at the target in backboard groove;
Described at least two target material assembly blanks are stacked in vacuum canning, between adjacent target material assembly blank, there is spacer;
Described vacuum canning is put into high temperature insostatic pressing (HIP) stove, utilizes heat and other static pressuring processes to be welded with backboard by the target in each target material assembly blank, form at least two target material assemblies;
After described welding completes, vacuum canning is cooled, remove jacket and spacer, take out at least two target material assemblies.
2. welding method according to claim 1, is characterized in that, the material of described spacer is stainless steel substrates or aluminium flake.
3. welding method according to claim 1, is characterized in that, the thickness of described spacer is for being more than or equal to 0.1mm and being less than or equal to 1mm.
4. welding method according to claim 1, is characterized in that, the hardness of described target is greater than backboard, and the mask to be welded of described target has projective structure; Or the hardness of described target is less than backboard, described backboard groove floor has projective structure.
5. welding method according to claim 4, is characterized in that, described its thickness is greater than described depth of groove preset distance, and described preset distance is less than or equal to 1mm.
6. welding method according to claim 5, is characterized in that, in the plane in vertical thickness direction, the planar dimension of described spacer equals the planar dimension of described backboard.
7. welding method according to claim 1, is characterized in that, the material of the target of each described target material assembly blank is titanium, and the material of backboard is copper or aluminium;
Utilize heat and other static pressuring processes to be welded with backboard by the target in each target material assembly blank, the step forming at least two target material assemblies comprises:
Make the ambient temperature of described vacuum canning for be more than or equal to 400 DEG C and be less than or equal to 500 DEG C, external environment condition pressure is for being more than or equal to 100Mpa;
The described vacuum canning be positioned under described environment temperature, environmental stress is incubated, pressurize is more than or equal to 3 and is less than or equal to 5 hours.
8. welding method according to claim 1, is characterized in that, the material of the target of each described target material assembly blank is fine aluminium, and the material of backboard is pure aluminum or aluminum alloy;
Utilize the target in the just each target material assembly blank of heat and other static pressuring processes to weld with backboard, the step forming at least two target material assemblies comprises:
Make the ambient temperature of described vacuum canning for be more than or equal to 150 DEG C and be less than or equal to 200 DEG C, external environment condition pressure is for being more than or equal to 100Mpa;
The described vacuum canning be positioned under described environment temperature, environmental stress is incubated, pressurize is more than or equal to 3 and is less than or equal to 5 hours.
9. welding method according to claim 1, is characterized in that, the material of the target of each described target material assembly blank is aluminium alloy, and the material of backboard is pure aluminum or aluminum alloy; Or the material of the target of each described target material assembly blank is copper, the material of backboard is fine copper or copper alloy;
Utilize the target in the just each target material assembly blank of heat and other static pressuring processes to weld with backboard, the step forming at least two target material assemblies comprises:
Make the ambient temperature of described vacuum canning for be more than or equal to 250 DEG C and be less than or equal to 350 DEG C, external environment condition pressure is for being more than or equal to 100Mpa;
The described vacuum canning be positioned under described environment temperature, environmental stress is incubated, pressurize is more than or equal to 3 and is less than or equal to 5 hours.
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| CN108202180A (en) * | 2016-12-20 | 2018-06-26 | 宁波江丰电子材料股份有限公司 | The manufacturing method of target material assembly |
| CN109664015A (en) * | 2017-10-16 | 2019-04-23 | 宁波江丰电子材料股份有限公司 | Target material assembly manufacturing method |
| CN110369897A (en) * | 2019-08-06 | 2019-10-25 | 宁波江丰电子材料股份有限公司 | A kind of welding method of target and backboard |
| CN111155059A (en) * | 2018-11-07 | 2020-05-15 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
| CN111218630A (en) * | 2020-03-11 | 2020-06-02 | 宁波江丰电子材料股份有限公司 | Method for eliminating defects of ultrahigh-purity copper ingot |
| CN112475505A (en) * | 2020-11-24 | 2021-03-12 | 爱发科电子材料（苏州）有限公司 | Welding structure and welding method for target and back plate |
| CN112743217A (en) * | 2020-12-29 | 2021-05-04 | 宁波江丰电子材料股份有限公司 | Welding structure and welding method of titanium-aluminum alloy target assembly |
| CN113210832A (en) * | 2021-06-02 | 2021-08-06 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for aluminum-scandium alloy target |
| CN115233167A (en) * | 2022-06-15 | 2022-10-25 | 先导薄膜材料（广东）有限公司 | Heat treatment method |
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| CN110369897A (en) * | 2019-08-06 | 2019-10-25 | 宁波江丰电子材料股份有限公司 | A kind of welding method of target and backboard |
| CN110369897B (en) * | 2019-08-06 | 2021-07-09 | 宁波江丰电子材料股份有限公司 | Welding method for target and back plate |
| CN111218630A (en) * | 2020-03-11 | 2020-06-02 | 宁波江丰电子材料股份有限公司 | Method for eliminating defects of ultrahigh-purity copper ingot |
| CN112475505A (en) * | 2020-11-24 | 2021-03-12 | 爱发科电子材料（苏州）有限公司 | Welding structure and welding method for target and back plate |
| CN112743217A (en) * | 2020-12-29 | 2021-05-04 | 宁波江丰电子材料股份有限公司 | Welding structure and welding method of titanium-aluminum alloy target assembly |
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| CN115233167A (en) * | 2022-06-15 | 2022-10-25 | 先导薄膜材料（广东）有限公司 | Heat treatment method |
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