CN101537533A - Welding structure and method of target and backing plate - Google Patents
Welding structure and method of target and backing plate Download PDFInfo
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- CN101537533A CN101537533A CN200910130847A CN200910130847A CN101537533A CN 101537533 A CN101537533 A CN 101537533A CN 200910130847 A CN200910130847 A CN 200910130847A CN 200910130847 A CN200910130847 A CN 200910130847A CN 101537533 A CN101537533 A CN 101537533A
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- target
- backboard
- aluminium
- titanium target
- groove
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Abstract
The invention relates to a welding structure and a method of a target and a backing plate, wherein the welding method of the target and the backing plate includes the steps of: providing a titanium target and an aluminum backing plate; forming a groove on the aluminum backing plate; mounting the titanium target in the groove; and adopting a hot isostatic pressing method to weld the titanium target and the aluminum backing plate. The invention greatly reduces the use amount of welding materials and simultaneously, the technology does not affect the tissue structure of the target and causes the quality of the target to meet the final use requirement.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to the Welding Structure and the method for target and backboard.
Background technology
In the making of large scale integrated circuit, target material assembly is to constitute by the target that meets sputtering performance with backboard that described target combined, had certain intensity.Described backboard can be assembled in the sputter base station at described target material assembly and play a supporting role, and has the effect of conduction heat.
At present, the technology that target and backboard are welded can adopt high temperature insostatic pressing (HIP) (HIP) diffusion technology for welding usually.Heat and other static pressuring processes is a process of at high temperature utilizing each to suppress to the static pressure of equalization.This method adopts metal or ceramic jacket (mild steel, Ni, Mo, glass etc.), uses nitrogen, argon gas to make pressure medium, makes the material hot densification.This method advantage be that thermal-arrest is pressed and etc. static pressure advantage, forming temperature is low, product densification, function admirable.
But, in forming the target material assembly process, adopt usually titanium as target, aluminium as back veneer material.Because titanium and aluminium are active stronger metallic elements.When temperature raise, the surface of titanium target and aluminium backboard all formed oxide layer soon in air, and two kinds of Metal Contact face atoms can not effectively spread, and make both bond strengths not reach requirement.
Summary of the invention
The problem that the present invention solves provides the Welding Structure and the method for a kind of target and backboard, prevents that the bond strength of titanium target and aluminium backboard from not reaching requirement.
For addressing the above problem, the invention provides the welding method of a kind of target and backboard, comprising: titanium target and aluminium backboard are provided; On the aluminium backboard, form groove; The titanium target is mounted in the groove; Adopt the high temperature insostatic pressing (HIP) method that titanium target and aluminium backboard are welded.
The invention provides the Welding Structure of a kind of target and backboard, comprising: the aluminium backboard is formed with groove in the described aluminium backboard; The titanium target that adopts the high temperature insostatic pressing (HIP) method to cooperate with described aluminium backboard further groove.
Compared with prior art, the present invention has the following advantages: (1) is installed on the titanium target in the groove of aluminium backboard, and both are cooperated fully, in follow-up welding process, can make titanium target pressurized abundant, improves the efficient of welding.And the size of titanium target has reduced the use amount of welding material significantly less than the aluminium backboard, and this technology can not impact the institutional framework of target simultaneously, makes the target quality meet final instructions for use.(2) because high temperature insostatic pressing (HIP) method (HIP) is a kind of method of welding in a vacuum, therefore prevented that effectively the metal surface is oxidized, the bond strength between titanium target and the aluminium backboard is improved, the yields of welding improves.
Further the aluminium back plate surface is carried out roughness processing, can make the oxide layer attenuation of aluminium back plate surface, improve the bond strength between titanium target and the aluminium backboard.
Aluminium backboard and titanium target are cleaned, the impurity on the solder side and oxide can be removed clean, the basis of accomplishing fluently for follow-up welding procedure.
Description of drawings
Fig. 1 makes the specific embodiment flow chart of the welding structure of target and backboard for the present invention;
Fig. 2 to Fig. 5 makes the embodiment schematic diagram of the welding structure of target and backboard for the present invention.
The specific embodiment
Fig. 1 makes the specific embodiment flow chart of the welding structure of target and backboard for the present invention.As shown in Figure 1, execution in step S101 provides titanium target and aluminium backboard;
Described titanium target is high purity titanium (4N5) or ceramic sputtered titanium (5N).
Execution in step S102 forms groove on the aluminium backboard;
The step that forms groove can be: spin coating photoresist layer on the aluminium backboard; Through photoetching process, on photoresist layer, define groove pattern; With the photoresist layer is mask, along groove pattern etching aluminium backboard, forms the groove with titanium target consistent size.
Execution in step S103 is mounted to the titanium target in the groove;
The titanium target is put into groove also to be comprised before: the aluminium back plate surface is carried out roughness processing; Titanium target and aluminium backboard are cleaned, and what wherein the titanium target is carried out is pickling, and what the aluminium backboard was carried out is that alcohol is washed.
Execution in step S104 adopts the high temperature insostatic pressing (HIP) method that titanium target and aluminium backboard are welded.
Said welding method is the Diffusion Welding of high temperature insostatic pressing (HIP).
Also comprise step before titanium target and aluminium backboard welded: titanium target and aluminium backboard are put into vacuum canning; Vacuum canning is vacuumized.
Based on the target of above-mentioned embodiment formation and the Welding Structure of backboard, comprising: the aluminium backboard is formed with groove in the described aluminium backboard; The titanium target that adopts the high temperature insostatic pressing (HIP) method to cooperate with described aluminium backboard further groove.
The present invention is installed on the titanium target in the groove of aluminium backboard, and both are cooperated fully, in follow-up welding process, can make titanium target pressurized abundant, improves the efficient of welding.And the size of titanium target has reduced the use amount of welding material significantly less than the aluminium backboard, and this technology can not impact the institutional framework of target simultaneously, makes the target quality meet final instructions for use.
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Fig. 2 to Fig. 5 makes the embodiment schematic diagram of the welding structure of target and backboard for the present invention.As shown in Figure 2, titanium target 20 is provided, and the shape of titanium target 20 is according to the actual requirement of applied environment, sputtering equipment, can be in circle, rectangle, annular, taper shape or other analogous shapes (comprising regular shape and irregularly shaped) any, and its thickness can be 5mm～20mm.As a preferred embodiment, titanium target 20 be shaped as circle, diameter is 360mm, thickness is 10mm.
Before titanium target 20 is carried out welding procedure, need carry out mechanical processing technique to titanium target 20, the roughness of titanium target material surface is reduced, improve the bond strength between follow-up titanium target and the aluminium backboard.
Through after the machining, need clean solder side.The method of cleaning the solder side of titanium target 20 has multiple.
A scheme as present embodiment is exactly to clean with acid solution earlier, cleans with organic solvent again.The described acid solution that is used to clean can be chosen hydrofluoric acid (HF), nitric acid (HNO
3) and water mixed solvent; Preferably, for example can be hydrofluoric acid (HF) and nitric acid (HNO
3) mixed solvent, hydrofluoric acid in the described mixed solvent: nitric acid: water=1: 10: 50～1: 3: 50; As a preferred embodiment, hydrofluoric acid: nitric acid: water=1: 5: 50.
Solder side to titanium target 20 carries out cleaning, the impurity on the solder side and oxide can be removed totally, makes the surface roughness of titanium target 20 can reach below 3.2 microns, the basis of accomplishing fluently for follow-up welding procedure.
Carry out in the cleaning at solder side, titanium target 20 entirely can be immersed in the cleaning solvent and clean titanium target 20; Also can be only carry out surface cleaning processing, save cleaning solvent relatively and increase work efficiency at the solder side of titanium target 20.
As shown in Figure 3, proceed machining on the solder side of aluminium backboard 30, form groove 32, the size of its further groove 32 is consistent with titanium target 20.Aluminium backboard 30 is carried out mechanical processing technique, the roughness on aluminium backboard 30 surfaces is reduced, improve the bond strength between follow-up titanium target and the aluminium backboard 30.
After aluminium backboard 30 carried out machining, cleaning treatment is carried out on aluminium backboard 30 surfaces.In the present embodiment, described surface cleaning processing directly working concentration is 50% alcohol, improves the surface smoothness of aluminium backboard 30, for follow-up welding procedure is prepared.
In addition, produce cracking for preventing aluminium backboard 30, aluminium backboard 30 can also comprise other preliminary treatment that homogenize and handle before welding.
As shown in Figure 4, titanium target 20 is mounted in the groove 32 of aluminium backboard 30, the solder side of described titanium target contacts with the solder side of aluminium backboard 30.
As shown in Figure 5, carry out weld job, aluminium backboard 30 and titanium target 20 are welded.
In the present embodiment, what described weld job adopted is that the high temperature insostatic pressing (HIP) method is carried out Diffusion Welding to titanium target 20 and aluminium backboard 30.Specifically, described diffusion welding (DW) can comprise step: prepare earlier a vacuum canning 40, described vacuum canning is 1.0mm～2.0mm aluminium welding fabrication; To be formed with the aluminium backboard 30 that is placed with titanium target 20 then and put into vacuum canning 40; It is 10 that vacuum canning 40 is evacuated to pressure
-3Torr～10
-5Torr, the bleeding point with vacuum canning 40 adopts mechanical means to shut then; Then, heat to 600 ℃, wherein the heating-up time is 3 hours, and temperature fall time is 6 hours.And pressurize by highly pressurised liquid or gas, make that pressure reaches 50MPa～160MPa in the vacuum canning, titanium target 20 and aluminium backboard 30 are combined, constitute target material assembly.Adopt the heat iso-hydrostatic diffusion welding technology, aluminium backboard 30 titanium targets 20 can be combined, the target material structure that completes has the bonding tightness height, advantages such as non-deformability is strong of being heated.
Compare with general diffusion technology for welding, the material that the high temperature insostatic pressing (HIP) method is used still less, the quality percent of pass of the target material assembly of welding is higher, the intensity of welding is also higher.
At last, remove vacuum canning, finally obtain the product after the Diffusion Welding.
Based on the target of the foregoing description formation and the Welding Structure of backboard, comprising: aluminium backboard 30, be formed with groove 32 in the described aluminium backboard 30, the size of groove 32 is consistent with titanium target 20; Titanium target 20 is positioned at groove 32.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (10)
1. the welding method of target and backboard is characterized in that, comprising:
Titanium target and aluminium backboard are provided;
On the aluminium backboard, form groove;
The titanium target is mounted in the groove;
Adopt the high temperature insostatic pressing (HIP) method that titanium target and aluminium backboard are welded.
2. the welding method of target according to claim 1 and backboard is characterized in that, the technology that forms groove is machining.
3. the welding method of target according to claim 2 and backboard is characterized in that the size of described groove is consistent with the titanium target.
4. the welding method of target according to claim 1 and backboard is characterized in that, the titanium target is put into groove also comprise before:
The aluminium back plate surface is carried out roughness processing;
Titanium target and aluminium backboard are cleaned.
5. the welding method of target according to claim 4 and backboard is characterized in that, the solution that cleans the titanium target is the mixed solution of hydrofluoric acid, nitric acid and water, wherein hydrofluoric acid: nitric acid: water=1: 10: 50～1: 3: 50.
6. the welding method of target according to claim 4 and backboard is characterized in that, the solution that cleans the aluminium backboard is alcohol, and concentration is 50%.
7. the welding method of target according to claim 1 and backboard is characterized in that, the titanium target is mounted in the groove also comprise afterwards: titanium target and aluminium backboard are put into vacuum canning; Vacuum canning is vacuumized.
8. the welding method of target according to claim 1 and backboard is characterized in that, when described hip treatment was welded, its heating-up temperature was 600 ℃, and the heating-up time is 3 hours, and temperature fall time is 6 hours, and pressure is 50MPa.
9. the Welding Structure of target and backboard is characterized in that, comprising:
The aluminium backboard is formed with groove in the described aluminium backboard;
The titanium target that adopts the high temperature insostatic pressing (HIP) method to cooperate with described aluminium backboard further groove.
10. the Welding Structure of target according to claim 9 and backboard is characterized in that the size of described groove is consistent with the titanium target.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910130847A CN101537533A (en) | 2009-04-15 | 2009-04-15 | Welding structure and method of target and backing plate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910130847A CN101537533A (en) | 2009-04-15 | 2009-04-15 | Welding structure and method of target and backing plate |
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| CN101537533A true CN101537533A (en) | 2009-09-23 |
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| CN200910130847A Pending CN101537533A (en) | 2009-04-15 | 2009-04-15 | Welding structure and method of target and backing plate |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102059421A (en) * | 2010-12-09 | 2011-05-18 | 宁波江丰电子材料有限公司 | Ti target material and Al backboard welding method |
| CN102366856A (en) * | 2011-10-20 | 2012-03-07 | 宁波江丰电子材料有限公司 | Welding method of cobalt target assembly |
| CN102430865A (en) * | 2011-10-20 | 2012-05-02 | 宁波江丰电子材料有限公司 | Welding method of target material and back plate and target material component formed thereby |
| WO2012065471A1 (en) * | 2010-11-18 | 2012-05-24 | 宁波江丰电子材料有限公司 | Target material soldering method |
| CN102500909A (en) * | 2011-10-26 | 2012-06-20 | 余姚康富特电子材料有限公司 | Welding method of target and back plate |
| CN103658898A (en) * | 2012-09-20 | 2014-03-26 | 宁波江丰电子材料有限公司 | Target module welding method |
| CN104588896A (en) * | 2013-10-30 | 2015-05-06 | 宁波江丰电子材料股份有限公司 | Welding method of aluminum target component |
| CN104741773A (en) * | 2013-12-31 | 2015-07-01 | 宁波江丰电子材料股份有限公司 | Welding method for tungsten-titanium-aluminum target material component |
| CN104741775A (en) * | 2013-12-31 | 2015-07-01 | 宁波江丰电子材料股份有限公司 | Welding method of target component |
| CN106271148A (en) * | 2015-05-12 | 2017-01-04 | 宁波江丰电子材料股份有限公司 | The welding method of target material assembly |
| CN106735670A (en) * | 2017-01-04 | 2017-05-31 | 青岛蓝光晶科新材料有限公司 | A kind of modified target furnace apparatus and target bonding method |
| CN107457495A (en) * | 2016-06-06 | 2017-12-12 | 宁波江丰电子材料股份有限公司 | The manufacture method of backboard and its manufacture method and target material assembly |
| CN107745177A (en) * | 2017-11-01 | 2018-03-02 | 宁波江丰电子材料股份有限公司 | Titanium target hot isostatic press welding method and the target of preparation |
| CN108687492A (en) * | 2017-04-12 | 2018-10-23 | 宁波江丰电子材料股份有限公司 | The manufacturing method of target material assembly |
| CN109108453A (en) * | 2018-10-09 | 2019-01-01 | 北京航空航天大学 | A kind of method of the efficient diffusion welding (DW) of nickel base superalloy channel design |
| CN111136396A (en) * | 2020-01-16 | 2020-05-12 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for copper target and back plate |
| CN111185659A (en) * | 2020-02-18 | 2020-05-22 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for titanium target and back plate and prepared titanium target assembly |
| CN111515484A (en) * | 2020-05-11 | 2020-08-11 | 宁波江丰电子材料股份有限公司 | Welding method of high-purity aluminum target |
| CN112091400A (en) * | 2020-09-14 | 2020-12-18 | 浙江最成半导体科技有限公司 | Method for jointing target material and back plate |
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2009
- 2009-04-15 CN CN200910130847A patent/CN101537533A/en active Pending
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012065471A1 (en) * | 2010-11-18 | 2012-05-24 | 宁波江丰电子材料有限公司 | Target material soldering method |
| KR101474380B1 (en) * | 2010-11-18 | 2014-12-18 | 콘풍 매테리얼스 인터네셔널 컴퍼니 리미티드 | Target material soldering method |
| CN102059421A (en) * | 2010-12-09 | 2011-05-18 | 宁波江丰电子材料有限公司 | Ti target material and Al backboard welding method |
| CN102430865B (en) * | 2011-10-20 | 2015-07-08 | 宁波江丰电子材料股份有限公司 | Welding method of target material and back plate and target material component formed thereby |
| CN102366856A (en) * | 2011-10-20 | 2012-03-07 | 宁波江丰电子材料有限公司 | Welding method of cobalt target assembly |
| CN102430865A (en) * | 2011-10-20 | 2012-05-02 | 宁波江丰电子材料有限公司 | Welding method of target material and back plate and target material component formed thereby |
| CN102500909A (en) * | 2011-10-26 | 2012-06-20 | 余姚康富特电子材料有限公司 | Welding method of target and back plate |
| CN103658898A (en) * | 2012-09-20 | 2014-03-26 | 宁波江丰电子材料有限公司 | Target module welding method |
| CN103658898B (en) * | 2012-09-20 | 2016-03-16 | 宁波江丰电子材料股份有限公司 | Welding method of target assembly |
| CN104588896A (en) * | 2013-10-30 | 2015-05-06 | 宁波江丰电子材料股份有限公司 | Welding method of aluminum target component |
| CN104741773B (en) * | 2013-12-31 | 2016-08-17 | 宁波江丰电子材料股份有限公司 | The welding method of tungsten titanium aluminum target material assembly |
| CN104741775A (en) * | 2013-12-31 | 2015-07-01 | 宁波江丰电子材料股份有限公司 | Welding method of target component |
| CN104741773A (en) * | 2013-12-31 | 2015-07-01 | 宁波江丰电子材料股份有限公司 | Welding method for tungsten-titanium-aluminum target material component |
| CN106271148A (en) * | 2015-05-12 | 2017-01-04 | 宁波江丰电子材料股份有限公司 | The welding method of target material assembly |
| CN107457495A (en) * | 2016-06-06 | 2017-12-12 | 宁波江丰电子材料股份有限公司 | The manufacture method of backboard and its manufacture method and target material assembly |
| CN106735670A (en) * | 2017-01-04 | 2017-05-31 | 青岛蓝光晶科新材料有限公司 | A kind of modified target furnace apparatus and target bonding method |
| CN108687492A (en) * | 2017-04-12 | 2018-10-23 | 宁波江丰电子材料股份有限公司 | The manufacturing method of target material assembly |
| CN107745177A (en) * | 2017-11-01 | 2018-03-02 | 宁波江丰电子材料股份有限公司 | Titanium target hot isostatic press welding method and the target of preparation |
| CN109108453A (en) * | 2018-10-09 | 2019-01-01 | 北京航空航天大学 | A kind of method of the efficient diffusion welding (DW) of nickel base superalloy channel design |
| CN111136396A (en) * | 2020-01-16 | 2020-05-12 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for copper target and back plate |
| CN111136396B (en) * | 2020-01-16 | 2021-08-10 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for copper target and back plate |
| CN111185659A (en) * | 2020-02-18 | 2020-05-22 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for titanium target and back plate and prepared titanium target assembly |
| CN111515484A (en) * | 2020-05-11 | 2020-08-11 | 宁波江丰电子材料股份有限公司 | Welding method of high-purity aluminum target |
| CN111515484B (en) * | 2020-05-11 | 2022-04-15 | 宁波江丰电子材料股份有限公司 | Welding method of high-purity aluminum target |
| CN112091400A (en) * | 2020-09-14 | 2020-12-18 | 浙江最成半导体科技有限公司 | Method for jointing target material and back plate |
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Open date: 20090923 |