CN107745177A - Titanium target hot isostatic press welding method and the target of preparation - Google Patents
Titanium target hot isostatic press welding method and the target of preparation Download PDFInfo
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- CN107745177A CN107745177A CN201711061449.9A CN201711061449A CN107745177A CN 107745177 A CN107745177 A CN 107745177A CN 201711061449 A CN201711061449 A CN 201711061449A CN 107745177 A CN107745177 A CN 107745177A
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- aluminium
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- titanium target
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/001—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by extrusion or drawing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
Abstract
The present invention provides the target of a kind of titanium target hot isostatic press welding method and preparation, belongs to target technical field.Titanium target hot isostatic press welding method, comprises the following steps：The titanium solder side of titanium target is subjected to roughing.The aluminium solder side of aluminium backboard is subjected to roughing, aluminium groove is set on aluminium solder side.By the titanium target after roughing and open up the aluminium backboard after aluminium groove and be put into IPA liquid and be cleaned by ultrasonic, and be dried in vacuo.Titanium target is put into aluminium groove, and is put into jacket and carries out vacuumize process.Jacket is put into high temperature insostatic pressing (HIP) stove and carries out hot isostatic press welding.This welding method can save process time, avoid the waste of rapidoprint and shorten weld interval.The target intensity prepared by the method is higher, meets semiconductor sputtering target requirement.
Description
Technical field
The present invention relates to target technical field, in particular to a kind of titanium target hot isostatic press welding method and preparation
Target.
Background technology
High-purity Ti sputtering target material has a wide range of applications in semiconductor chip fabrication.For target, successfully realize
Large-area welding with backboard is a technology that must be grasped.For high-purity Ti target, its backboard mainly using Al backboards as
Main, this just makes to realize that Ti/Al large-area welding turns into inevitable.
The method that Ti targets typically use Diffusion Welding with the welding of Al backboards, screw thread, diffusion welding (DW) are processed in the solder side of Ti targets
Ti targets and Al backboards are put into stove before connecing and carry out the pre-heat treatment, reaches preset temperature and is put into after the time under large pressing machine
Side, a period of time is kept under pressure, the atom phase counterdiffusion between contact surface is reached welding purpose.
Hot isostatic apparatus is current more advanced sintering, densification, the equipment of welding, uses hot isostatic press welding side
Method carries out Ti/Al welding, and its Fundamentals of Welding is consistent with Diffusion Welding, and the atom phase counterdiffusion of contact surface is welded to reach
Purpose.
Existing hot isostatic press welding method needs can be lost a certain amount of in Ti target weldings junction processing screw thread, processing screw thread
Material, Al backboards need finishing turning, hot isostatic press welding time longer.
The content of the invention
It it is an object of the invention to provide a kind of titanium target hot isostatic press welding method, can save process time, avoid adding
The waste of work material simultaneously shortens weld interval.
The target prepared another object of the present invention is to provide a kind of above-mentioned welding method, its intensity is higher, meets half
Conductor sputtering target material requirement.
The present invention is realized using following technical scheme：
A kind of titanium target hot isostatic press welding method, comprises the following steps：
(1) the titanium solder side of titanium target, is subjected to roughing；
(2) the aluminium solder side of aluminium backboard, is subjected to roughing, aluminium groove is set on aluminium solder side；
(3), by the titanium target after roughing and open up the aluminium backboard after aluminium groove and be put into IPA liquid and be cleaned by ultrasonic, go forward side by side
Row vacuum drying；
(4), titanium target is put into aluminium groove, and is put into jacket and carries out vacuumize process；
(5), jacket is put into high temperature insostatic pressing (HIP) stove and carries out hot isostatic press welding.
Further, in preferred embodiments of the present invention, the roughness of the titanium solder side after above-mentioned roughing is 1.8-
2.2μm。
Further, in preferred embodiments of the present invention, the roughness of the aluminium solder side after above-mentioned roughing is 1.8-
2.2μm。
Further, in preferred embodiments of the present invention, the thickness of above-mentioned titanium target is more than the depth of aluminium groove.
Further, in preferred embodiments of the present invention, in above-mentioned steps (4), the cross-sectional area of titanium target is less than aluminium groove
Cross-sectional area.
Further, in preferred embodiments of the present invention, above-mentioned aluminium backboard is made up of 6 line aluminium alloys.
Further, in preferred embodiments of the present invention, above-mentioned IPA liquid is isopropanol.
Further, in preferred embodiments of the present invention, above-mentioned hot isostatic press welding is 495-505 DEG C, pressed in temperature
Power carries out 2-2.5h under conditions of being 98-105MPa.
Further, in preferred embodiments of the present invention, above-mentioned hot isostatic press welding temperature be 500 DEG C, pressure be
2h is carried out under conditions of 98MPa.
A kind of target, it is prepared by above-mentioned titanium target hot isostatic press welding method.
The beneficial effect of titanium target hot isostatic press welding method that presently preferred embodiments of the present invention provides is：Respectively by titanium target
The aluminium solder side of titanium solder side and aluminium backboard carry out roughing, for finishing, rough machined process conditions are low, pair plus
The required precision of work instrument is relatively low, can save equipment cost, can also save process time.Meanwhile roughing with it is original
Screw thread process is compared, it is possible to reduce the waste of rapidoprint.Aluminium groove is set on solder side, it is convenient that titanium target is subsequently placed on aluminium
In groove, titanium target and aluminium backboard are cleaned, avoids wherein containing other impurity, when vacuum drying, can keep away
Exempt to introduce other impurities, meanwhile, avoid titanium target and aluminium backboard from being aoxidized, improve the intensity of welding.Heat etc. is carried out in a vacuum
Static pressure is welded, and titanium target and aluminium backboard can be avoided to be aoxidized, improve the intensity of welding, weld interval is relatively short.
The beneficial effect of target prepared by titanium target hot isostatic press welding method provided by the invention is：Pass through this above method
The target intensity of preparation is higher, meets semiconductor sputtering target requirement.
Embodiment
, below will be in the embodiment of the present invention to make the purpose, technical scheme and advantage of the embodiment of the present invention clearer
Technical scheme be clearly and completely described.Unreceipted actual conditions person, builds according to normal condition or manufacturer in embodiment
The condition of view is carried out.Agents useful for same or the unreceipted production firm person of instrument, it is the conventional production that can be obtained by commercially available purchase
Product.
The titanium target hot isostatic press welding method to the embodiment of the present invention and the target of preparation are specifically described below.
Titanium target hot isostatic press welding method, comprises the following steps：
(1) the titanium solder side of titanium target, is subjected to roughing, the aluminium solder side of aluminium backboard is subjected to roughing.Due to titanium target
Welding with aluminium backboard is to reach the purpose of welding by the atom phase counterdiffusion between titanium solder side and aluminium solder side, so,
Titanium solder side and aluminium solder side are all subjected to roughing, the roughness of titanium solder side and aluminium solder side can be improved, weld titanium
The contact area of face and aluminium solder side is bigger, so as to improve the diffusion velocity of the atom between titanium solder side and aluminium solder side, makes
The welding condition of hot isostatic press welding is more prone to reach, and can save the energy and time, reduces production cost.
Meanwhile titanium solder side and aluminium solder side all carry out roughing, rough machined process conditions are low, using machine tool just
It can carry out, the required precision to processing instrument is relatively low, can save equipment cost, can also save process time.Roughing
Compared with original screw thread process, it is possible to reduce the waste of rapidoprint.
Preferably, the roughness of the titanium solder side after roughing is 1.8-2.2 μm, aluminium solder side after roughing it is coarse
Spend for 1.8-2.2 μm.Titanium solder side is consistent with the roughness of aluminium solder side, can expand the atom of titanium solder side and aluminium solder side
Dissipate more uniformly, make its weld strength higher.Meanwhile roughness is at 1.8-2.2 μm, the processing of titanium target material and aluminium back veneer material
Wastage is smaller, moreover, its condition subsequently welded is more prone to reach, weld strength is also higher.
, it is necessary to which titanium target to be machined to the size of specification before titanium target and aluminium backboard match, it is also desirable to which aluminium backboard is processed
To the size of specification, the follow-up requirement as semiconductor sputtering target can be only achieved.
Preferably, aluminium backboard is made up of 6 line aluminium alloys.Its aluminium backboard is mainly made up of aluminium, magnesium and silicon, its anti-corrosion effects
It is good, it is not easy to aoxidize, processing characteristics is good, and it is welded with titanium target, and weld strength is higher.
(2), aluminium groove is set on aluminium solder side, facilitate the setting of follow-up titanium target.The thickness of titanium target is more than the depth of aluminium groove.
I.e. when titanium target is put into aluminium groove, the titanium solder side of titanium target is in contact with the bottom wall of aluminium groove, and titanium target stretches out aluminium groove, so,
When hot isostatic press welding is carried out to titanium solder side and aluminium solder side, ambient pressure applies stressed effect to titanium target more
It is good, improve weld strength.
(3), by the titanium target after roughing and open up the aluminium backboard after aluminium groove and be put into IPA liquid and be cleaned by ultrasonic, go forward side by side
Row vacuum drying.Avoid wherein containing other impurity, when vacuum drying, can avoid introducing other impurities, together
When, avoid titanium target and aluminium backboard from being aoxidized, improve the intensity of welding.
It is cleaned by ultrasonic using IPA liquid, compared with clear water carries out ultrasonic cleaning, the effect of IPA liquid dissolved impurities is more preferable,
After being processed to titanium target and aluminium backboard, titanium solder side can remain some titanium metal powders, and aluminium solder side can remain some aluminium
Metal dust, IPA liquid are cleaned by ultrasonic, and make the clearance of titanium powder and aluminium powder higher, its cleaning performance is more preferable.
Preferably, IPA liquid is isopropanol.Its removal effect is more preferable, also, its volatility is stronger, and drying time is shorter, section
The about energy.
(4), titanium target is put into aluminium groove, because the thickness of titanium target is more than the depth of aluminium groove, so, titanium target can stretch out aluminium
Groove.The cross-sectional area of titanium target is less than the cross-sectional area of aluminium groove, then is had between the madial wall of the lateral wall of titanium target and aluminium groove certain
Gap, when hot isostatic press welding is carried out, ambient pressure can apply from the side of titanium target and top surface to titanium target presses
The roof of the lateral wall of power, i.e. titanium target and remote solder side can all bear certain pressure, increase its weld strength.
In the present invention, the big 1-3mm of depth of the thickness ratio aluminium groove of titanium target, the feelings of the profile of the target after welding is not influenceed
Under condition, make weld strength higher, reach good welding effect.
And be put into jacket and carry out vacuumize process, to avoid titanium target and aluminium backboard from being aoxidized, the intensity of welding is improved,
And weld interval can be shortened.
(5), jacket is put into high temperature insostatic pressing (HIP) stove and carries out hot isostatic press welding.To each of the aluminium backboard in jacket and titanium target
Individual direction all applies equal pressure, while imposes high temperature, under the influence of high pressure and temperature, be titanium solder side and aluminium solder side it
Between atom phase counterdiffusion, reach the purpose of welding.
Preferably, hot isostatic press welding carries out 2- under conditions of temperature is 495-505 DEG C, pressure is 98-105MPa
2.5h.The welding condition and titanium target early stage of hot isostatic press welding and the processing of aluminium backboard have very big relation, due to above-mentioned titanium
A series of processing methods of target and aluminium backboard, reduce welding pressure, and weld interval shortens, and welding condition is more prone to reach,
Greatly reduce the cost of welding.
In the present invention, welding temperature is too high to cause the deformation of aluminium backboard seriously, and the Percentage bound of too low welding can reduce, so
Welding temperature is 495-505 DEG C；Weld interval cost of idleness too long, the time, too short weld atoms permeating was insufficient, welding effect
Fruit is poor, so, weld interval 2-2.5h；The too high same cost of idleness of pressure, because in high temperature insostatic pressing (HIP) stove being logical argon gas, equally
At a temperature of want higher pressure and mean that to need more argon gas, too low to weld bad, weld atoms permeating is not
Fully, so, welding pressure is 98-105MPa.
More preferably, hot isostatic press welding carries out 2h under conditions of temperature is 500 DEG C, pressure is 98MPa.It is shorter
Time, welding effect is more preferable under relatively low pressure.
(6) jacket, is taken out after the cooling of high temperature insostatic pressing (HIP) stove, the titanium target being welded is taken out after removing jacket and aluminium backboard obtains target
Material.
A kind of target, it is prepared by above-mentioned titanium target hot isostatic press welding method.The weld strength of obtained target is more than
150MPa, meet semiconductor sputtering target requirement.
Embodiment 1
A kind of titanium target hot isostatic press welding method, comprises the following steps：
(1) the titanium solder side of titanium target, is subjected to roughing；
(2) the aluminium solder side of aluminium backboard, is subjected to roughing, aluminium groove is set on aluminium solder side；
(3), by the titanium target after roughing and open up the aluminium backboard after aluminium groove and be put into IPA liquid and be cleaned by ultrasonic, go forward side by side
Row vacuum drying；
(4), titanium target is put into aluminium groove, and is put into jacket and carries out vacuumize process；
(5) jacket, is put into progress hot isostatic press welding in high temperature insostatic pressing (HIP) stove and obtains target.
Embodiment 2
A kind of titanium target hot isostatic press welding method, comprises the following steps：
(1) the titanium solder side of titanium target, is subjected to roughing using machine tool, the roughness for making solder side is 1.8 μm, will
Titanium target waits and the assembling of aluminium backboard after being machined to specification；
(2), by the aluminium solder side of 6 line aluminium alloy aluminium backboards using machine tool carry out roughing, aluminium solder side it is coarse
The size that aluminium backboard for 1.8 μm, is machined to specification is spent, aluminium groove is set on aluminium solder side, the depth of aluminium groove is less than titanium target
Thickness；
(3), by the titanium target after roughing and open up the aluminium backboard after aluminium groove and be put into isopropanol and be cleaned by ultrasonic, go forward side by side
Row vacuum drying；
(4), titanium target is put into aluminium groove, and is put into jacket and carries out vacuumize process；
(5), jacket is put into high temperature insostatic pressing (HIP) stove under conditions of temperature is 495 DEG C, pressure is 100MPa and carries out heat etc.
Static pressure welding 2.2h obtains target；
(6) jacket, is taken out after the cooling of high temperature insostatic pressing (HIP) stove, the titanium target being welded is taken out after removing jacket and aluminium backboard obtains target
Material.
Embodiment 3
A kind of titanium target hot isostatic press welding method, comprises the following steps：
(1) the titanium solder side of titanium target, is subjected to roughing using machine tool, the roughness for making solder side is 2.2 μm, will
Titanium target waits and the assembling of aluminium backboard after being machined to specification；
(2), by the aluminium solder side of 6 line aluminium alloy aluminium backboards using machine tool carry out roughing, aluminium solder side it is coarse
The size that aluminium backboard for 2.2 μm, is machined to specification is spent, aluminium groove is set on aluminium solder side, the depth of aluminium groove is less than titanium target
Thickness；
(3), by the titanium target after roughing and open up the aluminium backboard after aluminium groove and be put into isopropanol and be cleaned by ultrasonic, go forward side by side
Row vacuum drying；
(4), titanium target is put into aluminium groove, and is put into jacket and carries out vacuumize process；
(5), jacket is put into high temperature insostatic pressing (HIP) stove under conditions of temperature is 505 DEG C, pressure is 105MPa and carries out heat etc.
Static pressure welding 2.5h obtains target；
(6) jacket, is taken out after the cooling of high temperature insostatic pressing (HIP) stove, the titanium target being welded is taken out after removing jacket and aluminium backboard obtains target
Material.
Embodiment 4
A kind of titanium target hot isostatic press welding method, comprises the following steps：
(1) the titanium solder side of titanium target, is subjected to roughing using machine tool, the roughness for making solder side is 2 μm, by titanium
Target waits and the assembling of aluminium backboard after being machined to specification；
(2), by the aluminium solder side of 6 line aluminium alloy aluminium backboards using machine tool carry out roughing, aluminium solder side it is coarse
The size that aluminium backboard for 2 μm, is machined to specification is spent, aluminium groove is set on aluminium solder side, the depth of aluminium groove is less than the thickness of titanium target
Degree；
(3), by the titanium target after roughing and open up the aluminium backboard after aluminium groove and be put into isopropanol and be cleaned by ultrasonic, go forward side by side
Row vacuum drying；
(4), titanium target is put into aluminium groove, and is put into jacket and carries out vacuumize process；
(5), jacket is put into high temperature insostatic pressing (HIP) stove under conditions of temperature is 500 DEG C, pressure is 98MPa to carry out heat etc. quiet
Pressure welding meets 2h and obtains target；
(6) jacket, is taken out after the cooling of high temperature insostatic pressing (HIP) stove, the titanium target being welded is taken out after removing jacket and aluminium backboard obtains target
Material.
Embodiments described above is part of the embodiment of the present invention, rather than whole embodiments.The reality of the present invention
The detailed description for applying example is not intended to limit the scope of claimed invention, but is merely representative of the selected implementation of the present invention
Example.Based on the embodiment in the present invention, what those of ordinary skill in the art were obtained under the premise of creative work is not made
Every other embodiment, belongs to the scope of protection of the invention.
Comparative example 1
4 targets are prepared, the preparation method of its preparation method and embodiment 1-4 target is essentially identical, but to titanium target
The processing method of titanium solder side is to be finish-machined to shape of threads using lathe, and subsequent step is consistent, obtains reference examples 1-4, it is entered
Row is to such as table 1：
Influence of the different processing methods of the target of table 1 and aluminium backboard to target
As it can be seen from table 1 titanium target and aluminium backboard use rough machined mode early stage, it is rough machined compared with finishing
Process time substantially shortens, and consume material significantly reduces, and it can reach the requirement of semiconductor sputtering target after welding.
Comparative example 2
4 targets are prepared, the preparation method of its preparation method and embodiment 1-4 target is essentially identical, but to titanium target
The processing method of the aluminium solder side of titanium solder side and aluminium backboard is to be finish-machined to shape of threads using lathe, and extends high temperature insostatic pressing (HIP) weldering
The time connect and pressure, other steps are identical, obtain reference examples 5-8, it carried out to such as table 2：
The influence of the different processing methods of the target of table 2 and aluminium backboard, different welding conditions to target
From table 2 it can be seen that titanium target and aluminium backboard use rough machined mode early stage, and compared with finishing, after roughing,
When later stage carries out hot isostatic press welding, its weld interval greatly shortens, and welding pressure is smaller, and, obtained titanium target can
Meet the requirement of semiconductor sputtering target.
Claims (10)
- A kind of 1. titanium target hot isostatic press welding method, it is characterised in that comprise the following steps：(1) the titanium solder side of titanium target, is subjected to roughing；(2) the aluminium solder side of aluminium backboard, is subjected to roughing, aluminium groove is set on aluminium solder side；(3), by the titanium target after roughing and open up the aluminium backboard after aluminium groove and be put into IPA liquid and be cleaned by ultrasonic, And it is dried in vacuo；(4), the titanium target is put into the aluminium groove, and is put into jacket and carries out vacuumize process；(5), the jacket is put into high temperature insostatic pressing (HIP) stove and carries out hot isostatic press welding.
- 2. titanium target hot isostatic press welding method according to claim 1, it is characterised in that the titanium welding after roughing The roughness in face is 1.8-2.2 μm.
- 3. titanium target hot isostatic press welding method according to claim 2, it is characterised in that the aluminium welding after roughing The roughness in face is 1.8-2.2 μm.
- 4. titanium target hot isostatic press welding method according to claim 3, it is characterised in that the thickness of the titanium target is more than institute State the depth of aluminium groove.
- 5. titanium target hot isostatic press welding method according to claim 4, it is characterised in that in the step (4), the titanium The cross-sectional area of target is less than the cross-sectional area of the aluminium groove.
- 6. titanium target hot isostatic press welding method according to claim 4, it is characterised in that the aluminium backboard is that aluminium closes by 6 Gold is made.
- 7. titanium target hot isostatic press welding method according to claim 1, it is characterised in that the IPA liquid is isopropanol.
- 8. titanium target hot isostatic press welding method according to claim 1, it is characterised in that the hot isostatic press welding is in temperature Spend for 495-505 DEG C, pressure be 98-105MPa under conditions of carry out 2-2.5h.
- 9. titanium target hot isostatic press welding method according to claim 8, it is characterised in that the hot isostatic press welding is in temperature Spend for 500 DEG C, pressure be 98MPa under conditions of carry out 2h.
- 10. a kind of target, it is characterised in that prepared as the titanium target hot isostatic press welding method described in claim any one of 1-9 Form.
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| CN111421258A (en) * | 2020-04-09 | 2020-07-17 | 宁波江丰电子材料股份有限公司 | Welding method of high-purity aluminum target |
| CN112846651A (en) * | 2020-12-25 | 2021-05-28 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and aluminum back plate |
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| CN102059421A (en) * | 2010-12-09 | 2011-05-18 | 宁波江丰电子材料有限公司 | Ti target material and Al backboard welding method |
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| WO2000022185A1 (en) * | 1998-10-14 | 2000-04-20 | Praxair S.T. Technology, Inc. | Sputter target/backing plate assembly and method of making same |
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| CN112846651B (en) * | 2020-12-25 | 2022-10-28 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and aluminum back plate |
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