CN101579782B - Welding method of copper target blank and copper alloy backing plate - Google Patents
Welding method of copper target blank and copper alloy backing plate Download PDFInfo
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- CN101579782B CN101579782B CN 200910135325 CN200910135325A CN101579782B CN 101579782 B CN101579782 B CN 101579782B CN 200910135325 CN200910135325 CN 200910135325 CN 200910135325 A CN200910135325 A CN 200910135325A CN 101579782 B CN101579782 B CN 101579782B
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- 238000003466 welding Methods 0.000 title claims abstract description 103
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 71
- 239000010949 copper Substances 0.000 title claims abstract description 65
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000009792 diffusion process Methods 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 23
- 238000001816 cooling Methods 0.000 claims abstract description 8
- 238000009924 canning Methods 0.000 claims description 41
- 239000013077 target material Substances 0.000 claims description 32
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 30
- 230000003068 static effect Effects 0.000 claims description 16
- 238000003754 machining Methods 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910001209 Low-carbon steel Inorganic materials 0.000 claims description 6
- 230000006353 environmental stress Effects 0.000 claims description 6
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 6
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 238000001513 hot isostatic pressing Methods 0.000 abstract 2
- 238000005452 bending Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000000740 bleeding effect Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000009461 vacuum packaging Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a welding method of a target and a backing plate, comprising the following steps of: providing a copper target blank and a copper alloy backing plate; putting the copper target blank and the copper alloy backing plate in a vacuum can and then conveying to welding equipment; adopting hot isostatic pressing process to conduct diffusion welding, and welding the copper target blank on the copper alloy backing plate to form a target module; and after welding, conducting air cooling, removing the vacuum can and taking out the target module. On one hand, the welding method adopts the vacuum can to separate the target and the backing plate from air, thus effectively preventing the metal surface from being oxidized when in welding and reducing the vacuum equipment cost; on the other hand, the welding method utilizes the hot isostatic pressing process to conduct diffusion welding, thus further improving the bonding strength between the copper target blank and the copper alloy backing plate and leading to small bending deformation after bonding.
Description
Technical field
The present invention relates to the manufacturing of semiconductor applications sputtering target material, relate in particular to the welding method of copper target blank and copper alloy backing plate.
Background technology
In semi-conductor industry, target material assembly is to constitute by the target that meets sputtering performance with backboard that said target combines, has certain intensity.Backboard can be assembled in the sputter base station at said target material assembly and play a supporting role, and has the effect of conduction heat.At present, mainly use metal tantalum (Ta) or copper (Cu) through physical vaporous deposition (PVD) plated film and form the barrier layer, in sputter procedure, use magnetron sputtering as target; Need to use to have sufficient intensity, and the also higher Cu alloy material of heat conduction, electric conductivity is as back veneer material.
With high-purity copper target blank and copper alloy backing plate through processing, welding fabrication, process the employed target material assembly of semi-conductor industry after, be installed in then on the sputter board, under magnetic field, electric field action, effectively carry out sputter control.In the existing sputtering technology, the working environment very severe of target material assembly, at first, the target material assembly operating temperature up to 300 ℃ to 500 ℃; Secondly, a side of target material assembly is filled with cooling water cold by force, and opposite side then is in 10
-9Under the high vacuum environment of Pa, be formed with huge pressure differential in the both sides up and down of target material assembly thus; Simultaneously, target material assembly is in high voltage electric field, the magnetic field, receives the bombardment of various particles.If the welding quality in the target material assembly between target and the backboard is relatively poor, will cause target under heating condition, to be out of shape, to ftracture even come off from backboard, not only can't reach the sputter effect of uniform, also may cause the sputter base station to damage simultaneously.
Therefore, need to select a kind of effective welding manner, make target and backboard realize reliable connection, satisfy long-term stability and produce, use the needs of target to seem very necessary.
Existing a kind of diffusion welding method is widely used in the welding of target blank and backboard.So-called Diffusion Welding is the material surface that is in contact with one another, under uniform temperature, pressure effect near, locally produce plastic deformation, phase counterdiffusion between atom is forming new diffusion layer at the interface, and realizes reliable the connection accomplishing welding process.
Yet when copper target blank and copper alloy backing plate are carried out Diffusion Welding; Because the chemical property of metallic copper and alloy thereof is comparatively active; Adopt conventional welding equipment to carry out Diffusion Welding, when temperature was heated to more than 200 ℃, the oxidation of face of weld was very serious; Thereby make Metal Contact face atom effectively not spread, be difficult to the welding effect that reaches desirable.Therefore need a kind of new diffusion technology for welding of research, improve welding back gained combination of components rate and intensity.
Summary of the invention
The problem that the present invention solves provides the welding method of a kind of copper target blank and copper alloy backing plate; Solve in the diffusion technology for welding because copper target blank and copper alloy backing plate easy oxidation of contact-making surface under heated condition, and influence the welding effect of gained target material assembly.
For addressing the above problem, the present invention provides the welding method of a kind of copper target blank and copper alloy backing plate, comprising: copper target blank and copper alloy backing plate are provided; Copper target blank and copper alloy backing plate are placed into vacuum canning send into welding equipment; Adopt heat and other static pressuring processes to carry out Diffusion Welding, copper target blank is soldered to copper alloy backing plate forms target material assembly; After accomplishing welding, carry out air cooling and remove vacuum canning taking-up target material assembly.
Alternatively, the concrete parametric optimization of said heat and other static pressuring processes is: 200 ℃ to 500 ℃ of welding temperatures, and environmental stress 50Mpa to 200Mpa, and under this temperature pressure, be incubated 3 hours-5 hours.
Alternatively, said vacuum canning employing 1.0mm-2.0mm mild steel or copper alloy welding fabrication, be evacuated to 10 behind pack into target blank and the backboard
-3Torr～10
-5Torr, sealing again.
Alternatively, before being placed into vacuum canning, also need carry out machining Chemical cleaning more earlier to copper target blank and copper alloy backing plate.
Alternatively, machining makes the fineness of target and back plate surface reach 0.2um-3.2um.
Alternatively, said Chemical cleaning is specially uses hydrochloric acid to clean, and the volume ratio of hydrogen chloride and water is 1: 5 in the said hydrochloric acid.
Compared with prior art, the present invention has the following advantages: adopting heat and other static pressuring processes to weld can be fine as to combine with two kinds of metal covering opposites, thereby can realize target and backboard are implemented the large tracts of land welding; Because heat and other static pressuring processes of the present invention is in vacuum canning, to weld, has therefore prevented that effectively metal to be welded is oxidized, and reduced the vacuum equipment cost.Weld through the inventive method and to make copper target blank and copper alloy backing plate higher in the mutual diffusion of contact-making surface; Bond strength can reach more than the 100Mpa; Can reach more than 95% in conjunction with rate, it is strong also to have the non-deformability of being heated, and advantage such as the process-cycle is short.
Description of drawings
Fig. 1 is the specific embodiment flow chart of copper target blank according to the invention and copper alloy backing plate welding method;
Fig. 2 to Fig. 5 is that sketch map is implemented in the welding of copper target blank according to the invention and copper alloy backing plate.
The specific embodiment
Fig. 1 is the diffusion welding method specific embodiment flow chart of target according to the invention and backboard, describes in conjunction with the enforcement sketch map of Fig. 2 to Fig. 5, and key step of the present invention is following:
S1, copper target blank and copper alloy backing plate are provided;
The copper target blank that provides; Its shape is according to the actual requirement of applied environment, sputtering equipment; Can be in circle, rectangle, annular, taper shape or other analogous shapes (comprising regular shape and irregularly shaped) any; And its thickness is generally 1mm～80mm, and the face size is according to the different not fixed ranges of the applied equipment of target.In addition, the target blank that is actually used in welding need be reserved 2mm～5mm surplus on the setting size, to adapt to the dilatancy of welding back metal.As shown in Figure 2, the present invention needs for explanation, after state specific embodiment and all select a kind of typically copper target blank 10, be shaped as circle, diameter is 350mm, thickness is 10mm.And the shape of copper alloy backing plate 20 is determined by sputtering equipment.
S2, machining Chemical cleaning is then carried out on the surface of copper target blank and copper alloy backing plate;
Wherein machining is carried out on the surface of copper target blank and copper alloy backing plate and make it light, especially make both contact-making surfaces reach necessary fineness,, prevent to form in the welding process defectives such as projection or groove so that fit closely.
The cleaning on copper target blank and copper alloy backing plate surface all can directly use hydrochloric acid to clean, and removes the soluble impurity on surface, can prevent that equally the defective in the welding process from forming.The volume ratio of hydrogen chloride and water is 1: 5 in the hydrochloric acid.
S3, copper target blank and copper alloy backing plate are placed into vacuum canning send into welding equipment;
As shown in Figure 3, copper target blank 10 is fixing with copper alloy backing plate 20 assemblings, make the face of weld is fitted that in the vacuum canning 30 by 1.0mm～2.0mm mild steel or copper alloy welding fabrication of packing into then, the bleeding point 31 through vacuum canning is evacuated to 10 again
-3Torr～10
-5Torr seals bleeding point 31 at last, in vacuum canning 30, forms vacuum environment; Above-mentioned vacuum canning 30 is sent into welding equipment together with built-in target blank and backboard integral body to be welded.
S4, employing heat and other static pressuring processes carry out Diffusion Welding, copper target blank is soldered to copper alloy backing plate forms target material assembly;
Said heat and other static pressuring processes is under hot conditions, utilizes press equipment to adopt modes such as liquid or gas medium around workpiece to be welded, to form the High Voltage environment, welds.
As shown in Figure 4, copper target blank 10 and copper alloy backing plate 20 weld in vacuum canning 30, and the vacuum canning 30 outside high temperature and high pressure environments that form.Be shaped because vacuum canning 30 is thin walled welds, so vacuum canning can fit tightly built-in target material assembly, extraneous High Voltage can directly be passed to copper target blank 10 and copper alloy backing plate 20, and each forms pressure to contact-making surface at both.What vacuum canning 30 played only is secluding air, and carries out the effect that heat is transmitted.
The concrete parameter of heat and other static pressuring processes is following: welding temperature is 200 ℃ to 500 ℃, and environmental stress is 50Mpa to 200Mpa, and under this temperature pressure, is incubated 3 hours～5 hours;
Under these conditions, copper target blank and copper alloy backing plate produce plastic deformation on contact-making surface, and phase counterdiffusion between atom is forming new diffusion layer at the interface, and final the realization accomplished welding process reliable the connection.
S5, air cooling are accomplished welding with the cooling target material assembly.
As shown in Figure 5, remove jacket 30, obtain to accomplish the target material assembly of Diffusion Welding.
The present invention adopts heat and other static pressuring processes that copper target blank and copper alloy backing plate are implemented large-area butt welding; Because said Diffusion Welding is in vacuum canning, to carry out; Completely cut off air, therefore can prevent effectively that the contact-making surface of weld metal is oxidized, improved the bond strength between copper target blank and the copper alloy backing plate; Avoid target disengaging backboard in the sputter procedure, thereby normally carry out sputter coating.Formed target material assembly has the bonding tightness height, the advantages such as non-deformability is strong of being heated.
Below in conjunction with preferred embodiment the present invention is done further introduction.
Embodiment one
Below be processing step and the welding result that 99.995% high-purity C u target blank and Cu alloy backboard carry out Diffusion Welding:
(1) Surface Machining of target blank, backboard: Cu target blank surface and Cu alloy back plate surface are carried out machining make it light, especially make the fineness of both contact-making surfaces reach 0.2um.
(2) Chemical cleaning of target blank, backboard: Cu target blank and Cu alloy backboard are adopted the hydrochloric acid clean surface, remove the soluble impurity on surface.The volume ratio of hydrogen chloride and water is 1: 5 in the hydrochloric acid.
(3) with target blank, the backboard vacuum canning of packing into:
Earlier Cu target blank and Cu alloy backboard are packed in the vacuum canning of thin walled welds shaping, said vacuum canning is 1.0mm～2.0mm mild steel or copper alloy welding fabrication, is evacuated to 10 then
-3Torr～10
-5Torr, wherein 1 torr=1 millimetres of mercury=133.32 Pascals shut the bleeding point employing mechanical means of vacuum canning again, accomplish the vacuum packaging of target blank to be welded and backboard, and last integral body is sent in the welding equipment and is welded.
(4) utilize heat and other static pressuring processes to carry out Diffusion Welding to target blank is soldered to backboard:
To go up packaged product of step sends in the welding equipment; At first utilize forcing press to adopt the gas medium pressurization; The gas medium pressurization has each characteristic to the pressure same sex than the liquid pressurization; The welding of many contact-making surfaces when being fit to butt welding makes that the pressure on interior Cu target blank of vacuum canning and the Cu alloy backboard contact-making surface reaches 150MPa;
And then welding temperature is promoted to 450 ℃, and under this environmental stress and temperature, kept 5 hours, make the mutual thermal diffusion of contact-making surface of Cu target blank and Cu alloy backboard, combine the formation target material assembly.
(5) accomplish heat and other static pressuring processes after, target material assembly is carried out air cooling, remove vacuum canning, finally obtain the product after the Diffusion Welding.
At last; Welding condition detection: utilize C-SCAN to detect the solder bond rate; Its solder bond rate of target material assembly that should be made up of Cu target blank and Cu alloy backboard reaches 98%, tests its hot strength again, and the mean intensity of its Diffusion Welding is 100Mpa; The result shows that the target material assembly welding performance that adopts diffusion welding method according to the invention to obtain is very reliable.
Embodiment two
Below be processing step and the welding result that 99.99% high-purity C u target blank and Cu alloy backboard carry out Diffusion Welding:
(1) Surface Machining of target blank, backboard: Cu target blank surface and Cu alloy back plate surface are carried out machining make it light, especially make the fineness of both contact-making surfaces reach 3.2um.
(2) Chemical cleaning of target blank, backboard: Cu target blank and Cu alloy backboard are adopted the hydrochloric acid clean surface, remove the soluble impurity on surface.The volume ratio of hydrogen chloride and water is 1: 5 in the hydrochloric acid.
(3) with target blank, the backboard vacuum canning of packing into:
Earlier Cu target blank and Cu alloy backboard are packed in the vacuum canning of thin walled welds shaping, said vacuum canning is 1.0mm～2.0mm mild steel or copper alloy welding fabrication, is evacuated to 10 then
-3Torr～10
-5Torr, the bleeding point with vacuum canning adopts mechanical means to shut again, accomplishes the vacuum packaging of target blank to be welded and backboard, and last integral body is sent in the welding equipment and is welded.
(4) utilize heat and other static pressuring processes to carry out Diffusion Welding to target blank is soldered to backboard:
To go up packaged product of step sends in the welding equipment; At first utilize forcing press to adopt the gas medium pressurization; The gas medium pressurization has each characteristic to the pressure same sex than the liquid pressurization; The welding of many contact-making surfaces when being fit to butt welding makes that the pressure on interior Cu target blank of vacuum canning and the Cu alloy backboard contact-making surface reaches 50MPa;
And then welding temperature is promoted to 200 ℃, and under this environmental stress and temperature, kept 3 hours, make the mutual thermal diffusion of contact-making surface of Cu target blank and Cu alloy backboard, combine the formation target material assembly.
(5) accomplish heat and other static pressuring processes after, target material assembly is carried out air cooling, remove vacuum canning, finally obtain the product after the Diffusion Welding.
At last; Welding condition detection: utilize C-SCAN to detect the solder bond rate; Its solder bond rate of target material assembly that should be made up of Cu target blank and Cu alloy backboard reaches 95%, tests its hot strength again, and the mean intensity of its Diffusion Welding is 110Mpa; The result shows that the target material assembly welding performance that adopts diffusion welding method according to the invention to obtain is very reliable.
Embodiment three
Below be processing step and the welding result that 99.99% high-purity C u target blank and CU alloy backboard carry out Diffusion Welding:
(1) Surface Machining of target blank, backboard: Cu target blank surface and CU alloy back plate surface are carried out machining make it light, especially make the fineness of both contact-making surfaces reach 1.6um.
(2) Chemical cleaning of target blank, backboard: Cu target blank and CU alloy backboard are adopted the hydrochloric acid clean surface, remove the soluble impurity on surface.The volume ratio of hydrogen chloride and water is 1: 5 in the hydrochloric acid.
(3) with target blank, the backboard vacuum canning of packing into:
Earlier Cu target blank and CU alloy backboard are packed in the vacuum canning of thin walled welds shaping, said vacuum canning is 1.0mm～2.0mm mild steel or copper alloy welding fabrication, is evacuated to 10 then
-3Torr～10
-5Torr, the bleeding point with vacuum canning adopts mechanical means to shut again, accomplishes the vacuum packaging of target blank to be welded and backboard, and last integral body is sent in the welding equipment and is welded.
(4) utilize heat and other static pressuring processes to carry out Diffusion Welding to target blank is soldered to backboard:
To go up packaged product of step sends in the welding equipment; At first utilize forcing press to adopt the gas medium pressurization; The gas medium pressurization has each characteristic to the pressure same sex than the liquid pressurization; The welding of many contact-making surfaces when being fit to butt welding makes that the pressure on interior Cu target blank of vacuum canning and the Cu alloy backboard contact-making surface reaches 100MPa;
And then welding temperature is promoted to 300 ℃, and under this environmental stress and temperature, kept 4 hours, make the mutual thermal diffusion of contact-making surface of Cu target blank and Cu alloy backboard, combine the formation target material assembly.
(5) accomplish heat and other static pressuring processes after, target material assembly is carried out air cooling, remove vacuum canning, finally obtain the product after the Diffusion Welding.
At last; Welding condition detection: utilize C-SCAN to detect the solder bond rate; Its solder bond rate of target material assembly that should be made up of Cu target blank and Cu alloy backboard reaches 97%, tests its hot strength again, and the mean intensity of its Diffusion Welding is 120Mpa; The result shows that the target material assembly welding performance that adopts diffusion welding method according to the invention to obtain is very reliable.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (4)
1. the welding method of copper target blank and copper alloy backing plate is characterized in that, comprising:
Copper target blank and copper alloy backing plate are provided;
Copper target blank and copper alloy backing plate are placed into vacuum canning send into welding equipment; Said vacuum canning is formed by thin walled welds; Said vacuum canning fits tightly copper target blank and the copper alloy backing plate in it; High Voltage the external world is put on vacuum canning directly is passed to copper target blank and copper alloy backing plate, forms pressure in each of copper target blank and copper alloy backing plate to contact-making surface;
Adopt heat and other static pressuring processes to carry out Diffusion Welding, copper target blank is soldered to copper alloy backing plate forms target material assembly;
After accomplishing welding, carry out air cooling and remove vacuum canning taking-up target material assembly;
Wherein, said vacuum canning employing 1.0mm ~ 2.0mm mild steel or copper alloy welding fabrication, be evacuated to 10 behind pack into target blank and the backboard
-3Torr ~ 10
-5Torr, sealing again;
The concrete parameter of said heat and other static pressuring processes is: 200 ℃ to 500 ℃ of welding temperatures, and environmental stress 50Mpa to 200Mpa, and under this temperature pressure, be incubated 3 h ~ 5 hours.
2. the welding method of copper target blank according to claim 1 and copper alloy backing plate is characterized in that, before being placed into vacuum canning, also need carry out machining Chemical cleaning more earlier to copper target blank and copper alloy backing plate.
3. the welding method of copper target blank according to claim 2 and copper alloy backing plate is characterized in that, machining makes the fineness of target and back plate surface reach 0.2um ~ 3.2um.
4. the welding method of copper target blank according to claim 2 and copper alloy backing plate is characterized in that, said Chemical cleaning is specially uses hydrochloric acid to clean, and the volume ratio of hydrogen chloride and water is 1:5 in the said hydrochloric acid.
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| CN 200910135325 CN101579782B (en) | 2009-04-20 | 2009-04-20 | Welding method of copper target blank and copper alloy backing plate |
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|---|---|---|---|
| CN 200910135325 CN101579782B (en) | 2009-04-20 | 2009-04-20 | Welding method of copper target blank and copper alloy backing plate |
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| CN101407907A (en) * | 2008-11-28 | 2009-04-15 | 株洲冶炼集团股份有限公司 | Sheath for producing target material by hot isostatic pressing and method for producing target material |
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2009
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1419608A (en) * | 2000-01-20 | 2003-05-21 | 霍尼韦尔国际公司 | Method of diffusion bonding targets to backing plates |
| CN1970209A (en) * | 2006-12-01 | 2007-05-30 | 宁波江丰电子材料有限公司 | Diffusion welding method |
| CN101407907A (en) * | 2008-11-28 | 2009-04-15 | 株洲冶炼集团股份有限公司 | Sheath for producing target material by hot isostatic pressing and method for producing target material |
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| JP特开平5-104258A 1993.04.27 |
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| CN101579782A (en) | 2009-11-18 |
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