CN102554455A - Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate - Google Patents
Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate Download PDFInfo
- Publication number
- CN102554455A CN102554455A CN2011104609462A CN201110460946A CN102554455A CN 102554455 A CN102554455 A CN 102554455A CN 2011104609462 A CN2011104609462 A CN 2011104609462A CN 201110460946 A CN201110460946 A CN 201110460946A CN 102554455 A CN102554455 A CN 102554455A
- Authority
- CN
- China
- Prior art keywords
- tungsten
- titanium alloy
- copper alloy
- backing plate
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
Disclosed is a diffusion welding method for a tungsten-titanium alloy target and a copper alloy back plate. An aluminum diffusion auxiliary layer is arranged between the tungsten-titanium alloy target and the copper alloy back plate, diffusion welding of the tungsten-titanium alloy target, the aluminum diffusion auxiliary layer and the copper alloy back plate is realized by the aid of high-strength atomic diffusivity between the tungsten-titanium alloy target and the aluminum diffusion auxiliary layer and between the aluminum diffusion auxiliary layer and the copper alloy back plate, and finally, welding quality of the tungsten-titanium alloy target and the copper alloy back plate is improved. Diffusion welding of the tungsten-titanium alloy target and the copper alloy back plate is implemented by a hot isostatic pressing process. As diffusion welding is performed in a vacuum sheath and air is isolated, the contact surface of welded metal can be effectively prevented from being oxidized, the bonding strength of the tungsten-titanium alloy target, the aluminum diffusion auxiliary layer and the copper alloy back plate is enhanced, the target is prevented from being separated from the back plate during sputtering, and sputtering coating is normally performed. A target assembly formed by the diffusion welding method has the advantages of high bonding compactness, high thermal deformation resistance and the like.
Description
Technical field
The present invention relates to the manufacturing of semiconductor applications sputtering target material, relate in particular to tungsten-titanium alloy target and copper alloy backing plate diffusion welding method.
Background technology
High purity tungsten, titanium or its alloy have high resistance, the high-temperature stability to electron transfer and can form stable silicide, thereby in electronics industry, often are used widely as grid, connection, transition and barrier metal layer with form of film.Especially in the super large-scale integration preparation, it is as resistive layer, the good performance of diffusion impervious layer performance.
And in the large-scale in modern times integrated circuit fabrication process, magnetron sputtering becomes the most excellent substrate coating technology with advantages such as its sputtering raste are high, the substrate temperature rise is low, film-Ji adhesion is good.High-purity tungsten target and high purity tungsten titanium alloy target are imposed the mode of magnetron sputtering usually and are made various complicacies and high performance thin-film material.As, just the tungsten-titanium alloy sputtering target material is usually used in making the transition metal layer that film is a solar cell.
In the magnetron sputtering membrane process, target material assembly is made up of target that meets sputtering performance and the backboard that combines with said target.In the magnetron sputtering membrane process, target material assembly is in the bigger magnetic field of high voltage electric field and magnetic field intensity, receives various high energy ions bombardments, cause target generation sputter, and the target atom of the neutrality that sputters or molecule deposition forms film on substrate.In the whole process, target material assembly is under the high temperature all the time, and the target front is placed at 10
-9Under the high vacuum environment of Pa, and the back of backboard need receive lasting high-pressure cooling water impact, in order to improve the heat radiation function of target material assembly.Thereby, there is huge pressure differential in the target and the backboard both sides of target material assembly in the magnetron sputtering technique.Thereby in the target material assembly preparation; Not only need enough intensity, be used for target material assembly and be assembled to the sputter base station and play support, and target and backboard have enough combination fastness for backboard; Thereby stand the magnetron sputtering harsh conditions, guarantee that magnetron sputtering plating carries out smoothly.
Adopting the conventional welding procedure of target material assembly to comprise through melting welding, soldering at present welds together target and backboard to form target material assembly.Yet; For being target with the tungsten-titanium alloy; And copper is the target material assembly of backboard, because that the fusing point of target and backboard differs is too big (the tungsten fusing point is that 3407 ℃, titanium fusing point are that 1668 ℃, copper fusing point are 1084 ℃), thereby when the conventional welding procedure of employing; Tungsten-titanium alloy and scolder are difficult to soak into, merge when welding on the one hand, reduce the conjugation of target and backboard; On the other hand, under magnetron sputtering high temperature, the scolder that is used to combine is prone to fusing (generally with tin solder or indium solder as scolder, its fusing point is all less than 250 ℃); The coefficient of expansion of tungsten titanium and metallic copper differs bigger in addition; Thereby the relative deformation of target and backboard is bigger in welding and the magnetron sputtering process; Especially for large-area target material assembly, also there is the difference of local target and backboard conjugation in it, and above-mentioned reason all can cause in the magnetron sputtering process; Target and backboard come off, and cause the magnetron sputtering plating failure.
Present limitation based on traditional welding technology; When differing greatly for the physical properties such as fusing point of target and backboard; Can adopt the Diffusion Welding method; So-called Diffusion Welding is meant weldment fitted tightly, and under uniform temperature and pressure, keeps a period of time, makes atom between the two weldment contact-making surfaces, diffuses to form the welding method of connection each other.With respect to the welding manner of routine, Diffusion Welding has the bonding tightness height, the advantages such as non-deformability is strong of being heated.But based on tungsten-titanium alloy and copper bigger have a physics property difference; The atom diffusion difficulty that tungsten-titanium alloy target and copper alloy backing plate are asked is bigger, even adopt the welding of Diffusion Welding method, the quality of welding is unsatisfactory; And Diffusion Welding is carried out the conditional request harshness under nearly 1000 ℃ of conditions.
Summary of the invention
The problem that the present invention solves provides a kind of tungsten-titanium alloy target and copper alloy backing plate diffusion welding method; Solve in the existing technology of tungsten-titanium alloy target and copper alloy backing plate welding; Tungsten-titanium alloy target and copper alloy backing plate welding effect are poor, and process conditions require harsh problem.
For addressing the above problem, the invention provides a kind of tungsten-titanium alloy target and copper alloy backing plate diffusion welding method, comprising:
Tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are provided, and said tungsten-titanium alloy target comprises sputter face and preparatory faying face, and said copper alloy backing plate comprises the preparatory faying face and the back side; Said aluminium diffusion auxiliary layer comprises the upper and lower end face that the preparatory faying face structure with the preparatory faying face of said tungsten-titanium alloy target and copper alloy backing plate is complementary;
Send into welding equipment after being placed into tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate in the vacuum canning; Wherein, said aluminium diffusion auxiliary layer is between the preparatory faying face of the preparatory faying face of said tungsten-titanium alloy target and copper alloy backing plate; And the upper and lower end face of said aluminium diffusion auxiliary layer fits with the preparatory faying face of said tungsten-titanium alloy target and the preparatory faying face of copper alloy backing plate respectively;
Adopt heat and other static pressuring processes to carry out Diffusion Welding, the tungsten-titanium alloy target is soldered to copper alloy backing plate to form target material assembly;
After accomplishing welding, carry out air cooling and remove vacuum canning taking-up target material assembly.
Alternatively, the area of the preparatory faying face of said tungsten-titanium alloy target comprises 0.10m
2～0.16m
2
Alternatively, said tungsten-titanium alloy target is circular target, and its diameter comprises 350mm～450mm, and thickness comprises 5～12mm.
Alternatively; In said heat and other static pressuring processes; The vacuum canning that inside is equipped with said tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate is under 300 ℃～600 ℃, 50Mpa～160Mpa condition; Be incubated 3 to 5 hours, accomplish said tungsten-titanium alloy target and copper alloy backing plate Diffusion Welding.
Alternatively, said heat and other static pressuring processes condition temperature is controlled in 400 ℃～480 ℃.
Alternatively, said aluminium diffusion auxiliary layer thickness is 5mm to 7mm.
Alternatively; Said vacuum canning adopts 1.0mm to 2.0mm stainless steel welding fabrication; And in said heat and other static pressuring processes, after said tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are packed said vacuum canning into, said vacuum canning is evacuated to 10
-3Holder to 10
-4Holder, sealing again.
Alternatively; Before said tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are put into said vacuum canning; Adopt machining with the preparatory faying face of tungsten-titanium alloy target, the preparatory faying face of copper alloy backing plate, and the fineness of the upper and lower end face of aluminium diffusion auxiliary layer is machined to 0.2 μ m～3.2 μ m.
Alternatively, after said machining, the volume ratio that adopts hydrogen chloride and water is that 1: 5 hydrochloric acid cleaning fluid is removed tungsten-titanium alloy, copper alloy target and aluminium diffusion auxiliary layer surface impurity.
Compared with prior art, the present invention has the following advantages:
1. the present invention adopts heat and other static pressuring processes to weld to make the each several part of the faying face of tungsten-titanium alloy target and copper alloy backing plate under equal conditions to weld; Thereby guarantee the congruency of tungsten-titanium alloy target and copper alloy backing plate faying face welding process and welding quality; Reduce the local welding difference on effect, the final realization implemented the large tracts of land welding to tungsten-titanium alloy target and copper alloy backing plate; Because heat and other static pressuring processes of the present invention is in vacuum canning, to weld, has prevented effectively that therefore tungsten-titanium alloy target and copper alloy backing plate are oxidized, and reduced the vacuum equipment cost.And the present invention adopts between tungsten-titanium alloy target and the aluminium diffusion auxiliary layer; And thereby high-intensity atom diffusion rate realizes three's Diffusion Welding between aluminium diffusion auxiliary layer and the copper alloy backing plate, and finally improve the welding quality between tungsten-titanium alloy target and copper alloy backing plate.Through test, among the present invention, tungsten-titanium alloy target and copper alloy backing plate bond strength can reach more than the 20Mpa, can reach 99% in conjunction with rate; In addition, it is strong also to have the non-deformability of being heated, and advantage such as the process-cycle is short.
2. in the possibility, tungsten-titanium alloy target and copper alloy backing plate are accomplished welding among the present invention under less than 600 ℃ heat and other static pressuring processes condition, compare and traditional handicraft, and temperature conditions requires low, makes technology more easy to control, and has reduced technology cost input.
3. in the possibility, the preparatory bonded area of tungsten-titanium alloy target that the present invention is suitable for reaches 0.10m
2～0.16m
2Than the existing target that comprises tungsten-titanium alloy target and copper alloy backing plate, its bonding area is bigger.And in heat and other static pressuring processes; Under the acting in conjunction of HTHP; Each of tungsten-titanium alloy target and copper alloy backing plate is to balanced pressurized; Aluminium between tungsten-titanium alloy target and copper alloy backing plate diffusion auxiliary layer in addition makes tungsten-titanium alloy target and copper alloy backing plate junction density height, good uniformity, welding effect excellence.
Description of drawings
Fig. 1 is the implementing procedure sketch map of tungsten-titanium alloy target of the present invention and copper alloy backing plate diffusion welding method;
Fig. 2 to Fig. 4 implements sketch map for the welding of tungsten-titanium alloy target of the present invention and copper alloy backing plate diffusion welding method.
The specific embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth a lot of details in the following description so that make much of the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not received the restriction of following disclosed specific embodiment.
Fig. 1 is tungsten-titanium alloy target and copper alloy backing plate diffusion welding method implementing procedure sketch map described in the present invention, and key step of the present invention is following:
S1 provides tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate.
The shape of said tungsten-titanium alloy target can be and comprise circle, rectangle, annular, taper shape or other regular/irregular arbitrary shapes based on the actual application requirements.In 5mm～12mm, the preparatory faying face area of tungsten-titanium alloy target comprised 0.10m between its thickness was general
2～0.16m
2
If said tungsten-titanium alloy target be circular, between 350mm～450mm, the coating base material is different during generally according to applied equipment of target and use does specifically setting for its concrete face size between the diameter of then said tungsten-titanium alloy target.In order to adapt to the dilatancy phenomenon of welding back metal, in the present invention, tungsten-titanium alloy target to be welded is reserved 1mm～3mm surplus in the setting of actual needs on the tungsten-titanium alloy target material surface size, add 1～3mm surplus on the thickness.
Said copper alloy backing plate comprises the copper alloy backing plate of oxygen-free copper or containing metal chromium.Its size specifically designs according to tungsten-titanium alloy target size and actual magnetron sputtering apparatus needs.
Said tungsten-titanium alloy target comprises sputter face and preparatory faying face, and said copper alloy backing plate comprises the preparatory faying face and the back side; Said aluminium diffusion auxiliary layer comprises the upper surface that the preparatory faying face structure with said tungsten-titanium alloy target is complementary, and the lower surface that is complementary with the preparatory faying face structure of said copper alloy backing plate.And, between the thickness of said aluminium diffusion auxiliary layer between the 5mm to 7mm.
In the welding procedure of existing tungsten-titanium alloy target and copper alloy backing plate, through evidence, directly fit copper alloy backing plate when carrying out Diffusion Welding when the tungsten-titanium alloy target, atom diffusion effect between the two is undesirable.The welding uniformity of tungsten-titanium alloy target and each joint portion of copper alloy backing plate is relatively poor, makes that the hot strength after the welding of tungsten-titanium alloy target and copper alloy backing plate is relatively poor.And being limited to above-mentioned existing tungsten-titanium alloy target and copper alloy backing plate Diffusion Welding technological deficiency, the solder side of tungsten-titanium alloy target and copper alloy backing plate is limited to 0.01m
2About, otherwise in the actual use of magnetron sputtering, be prone to tungsten-titanium alloy target and copper alloy backing plate obscission.
In conjunction with reference to figure 2～Fig. 4; The present invention is at tungsten- titanium alloy target 10 and 20 folders of copper alloy backing plate layer of aluminum diffusion auxiliary layer 30; In the Diffusion Welding process, atom diffusion takes place in said tungsten-titanium alloy target 10, aluminium diffusion auxiliary layer 30 and copper alloy backing plate 20 on contact-making surface separately.Through evidence; Between said aluminium diffusion auxiliary layer 30 and the tungsten-titanium alloy target 10; And said aluminium spreads auxiliary layer 30 and 20 atom diffusion speed of copper alloy backing plate are bigger; Degree is higher, thereby helps improving three's Diffusion Welding quality, and finally improves tungsten- titanium alloy target 10 and 20 welding qualities of copper alloy backing plate.
And, among the present invention, adopt the preparatory faying face area of tungsten-titanium alloy target can reach 0.10m
2～0.16m
2, than prior art, the present invention has not only improved the welding effect of tungsten-titanium alloy target and copper alloy backing plate, has realized the large tracts of land welding of tungsten-titanium alloy target and copper alloy backing plate especially.
S2 carries out machining Chemical cleaning then to the surface of tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate.
With reference to shown in Figure 2; Wherein to the preparatory faying face 11 of tungsten-titanium alloy target 10, the preparatory faying face 21 of copper alloy backing plate 20; And machining is carried out with lower surface 32 in the upper surface 31 of aluminium diffusion auxiliary layer 30; Make it between fineness to 0.2 μ m～3.2 μ m, fit closely between the three like this, prevent to form in the welding process defectives such as projection or groove.
Wherein, in the cleaning process, the cleaning on tungsten-titanium alloy target 10, copper alloy backing plate 20 and aluminium diffusion auxiliary layer 30 surfaces all can directly use hydrochloric acid to clean, and removes the soluble impurity on surface, can prevent that equally the defective in the welding process from forming.And the volume ratio of hydrogen chloride and water is preferably 1: 5 in the hydrochloric acid.
S3 after tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate combination, is placed into vacuum canning and sends into welding equipment.
In conjunction with reference to figure 3, upper surface 31, the lower surface 32 of said aluminium diffusion auxiliary layer 30 are placed with the preparatory faying face 11 of said tungsten-titanium alloy target 10 and preparatory faying face 21 relative applyings of copper alloy backing plate 20 respectively.Make said tungsten-titanium alloy target 10, aluminium diffusion auxiliary layer 30 and copper alloy backing plate 20 stacked combination, and in the vacuum canning 40 by 1.0mm～2.0mm stainless steel welding fabrication of packing into, the bleeding point 41 through vacuum canning 40 is evacuated to 10 again
-3Holder～10
-5 Bleeding point 41 is sealed in holder at last, in vacuum canning 40, forms vacuum environment; Above-mentioned vacuum canning 40 is sent into welding equipment together with built-in tungsten-titanium alloy target 10 and copper alloy backing plate 20 integral body to be welded.
S4 adopts heat and other static pressuring processes to carry out Diffusion Welding, the tungsten-titanium alloy target is soldered to copper alloy backing plate forms target material assembly.
In conjunction with reference to figure 4, tungsten-titanium alloy target 10 and copper alloy backing plate 20 weld in vacuum canning 40, and the vacuum canning 40 outside high temperature and high pressure environments that form.Because vacuum canning 40 is thin walled welds moulding; So vacuum canning can fit tightly built-in target material assembly; Extraneous High Voltage can directly be passed to tungsten-titanium alloy target 10, aluminium diffusion auxiliary layer 30 and copper alloy backing plate 20, and each forms pressure to contact-making surface the three.What vacuum canning 40 played only is secluding air, and carries out the effect that heat is transmitted.
And said heat and other static pressuring processes is under hot conditions, utilizes press equipment to adopt modes such as liquid or gas medium around workpiece to be welded, to form the High Voltage environment, welds.In heat and other static pressuring processes, under the acting in conjunction of HTHP, each of the tungsten-titanium alloy target 10 in the vacuum canning 40, aluminium diffusion auxiliary layer 30 and copper alloy backing plate 20 is to balanced pressurized.Make tungsten-titanium alloy target 10, aluminium diffusion auxiliary layer 30 and copper alloy backing plate 20 junction density height, good uniformity, welding effect excellence.
Among the present invention, the concrete parameter of heat and other static pressuring processes is following: welding temperature is 300 ℃ to 600 ℃, and environmental stress is 50Mpa to 160Mpa, and under this temperature pressure, is incubated 3 hours～5 hours.Wherein, temperature range can further preferably be controlled in 400 ℃～480 ℃.
In above-mentioned heat and other static pressuring processes; The contact-making surface 51 of said tungsten-titanium alloy target 10 and aluminium diffusion auxiliary layer 30, and the contact-making surface 52 of aluminium diffusion auxiliary layer 30 and copper alloy backing plate 20 produce plastic deformation; Phase counterdiffusion between atom; And form new diffusion layer, and finally realize three's reliable connection, accomplish welding process.
S5, air cooling is accomplished welding with the cooling target material assembly.
After accomplishing welding, earlier vacuum canning 40 is carried out air cooling, treat that it returns to room temperature after, remove vacuum canning 40 and take out target material assemblies.Obtain to accomplish the target material assembly of Diffusion Welding.Wherein the air cooling step make tungsten-titanium alloy target 10, aluminium diffusion auxiliary layer 30 and copper alloy backing plate 20 in the vacuum canning 40 by smooth transition under the high temperature of high temperature insostatic pressing (HIP), the condition of high voltage to room temperature.Thereby avoided excessive temperature contrast to cause damage for the target material assembly after welding.
Layer of aluminum diffusion auxiliary layer is set between tungsten-titanium alloy target of the present invention and the copper alloy backing plate.Adopt between tungsten-titanium alloy target and the aluminium diffusion auxiliary layer, thereby and high-intensity atom diffusion rate realization three's Diffusion Welding between aluminium diffusion auxiliary layer and the copper alloy backing plate, and finally improve the welding quality between tungsten-titanium alloy target and copper alloy backing plate.Adopt heat and other static pressuring processes that tungsten-titanium alloy target and copper alloy backing plate are implemented Diffusion Welding in the present invention; Because said Diffusion Welding is in vacuum canning, to carry out; Completely cut off air; Therefore can prevent effectively that the contact-making surface of weld metal is oxidized; Improve the bond strength between tungsten-titanium alloy target, aluminium diffusion auxiliary layer and the copper alloy backing plate, avoid target disengaging backboard in the sputter procedure, thereby normally carry out sputter coating.Through the formed target material assembly of the present invention have the bonding tightness height, the advantages such as non-deformability is strong of being heated.
Below in conjunction with preferred embodiment the present invention is done further introduction.
Embodiment one
Below be processing step and the welding result that 99.995% high-purity tungsten-titanium alloy target (wherein tungsten is 9: 1 with titanium purity ratio) and copper alloy backing plate carry out Diffusion Welding.Wherein, said tungsten-titanium alloy target is a rectangle, and the area of its preparatory faying face solder side of said copper alloy backing plate (promptly with) is 0.15m
2
(1) Surface Machining of tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate: to the preparatory faying face of preparatory faying face, copper alloy backing plate of tungsten-titanium alloy target; And the upper and lower end face of aluminium diffusion auxiliary layer carries out machining and makes it light, and makes the fineness of three's contact-making surface reach 0.25 μ m.
(2) Chemical cleaning of tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate: tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are adopted the hydrochloric acid clean surface, remove the soluble impurity on surface.The volume ratio of hydrogen chloride and water is 1: 5 in the hydrochloric acid.
(3) with the upper surface of said aluminium diffusion auxiliary layer, lower surface respectively with the placement of fitting relatively of the preparatory faying face of the preparatory faying face of said tungsten-titanium alloy target and copper alloy backing plate.Make said tungsten-titanium alloy target, aluminium spread auxiliary layer and copper alloy backing plate stacked combination.Wherein said aluminium diffusion auxiliary layer thickness is 5mm.
(4) with the said tungsten-titanium alloy target after the stacked combination, aluminium diffusion auxiliary layer and the copper alloy backing plate vacuum canning of packing into:
Earlier tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are packed in the vacuum canning of thin walled welds moulding, said vacuum canning is evacuated to 10 then by 1.0mm～2.0mm stainless steel welding fabrication
-3Holder～10
-5Holder, wherein 1 holder=1 millimetres of mercury=133.32 Pascals.Bleeding point with vacuum canning adopts mechanical means to shut again, accomplishes the vacuum packaging of target to be welded and backboard, and last integral body is sent in the welding equipment and welded.
(5) utilize heat and other static pressuring processes to carry out Diffusion Welding the tungsten-titanium alloy target be soldered to copper alloy backing plate:
To go up packaged product of step sends in the welding equipment; At first utilize forcing press to adopt the gas medium pressurization; The gas medium pressurization has each characteristic to the pressure same sex than the liquid pressurization; The welding of many contact-making surfaces when being fit to butt welding makes that the pressure on the mutual contact-making surface of tungsten-titanium alloy target in the vacuum canning, aluminium diffusion auxiliary layer and copper alloy backing plate reaches 80MPa;
And then welding temperature is promoted to 350 ℃, and under this environmental stress and temperature, kept 5 hours, make the contact-making surface thermal diffusion between mutually of tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate, combine, constitute target material assembly.
(6) accomplish heat and other static pressuring processes after, target material assembly is carried out air cooling, remove vacuum canning, finally obtain the product after the Diffusion Welding.
At last, welding condition detection: utilize C-SCAN to detect the solder bond rate, its solder bond rate of target material assembly that should be made up of tungsten-titanium alloy target and copper alloy backing plate reaches 99%, tests its hot strength again, and the mean intensity of its Diffusion Welding is 20Mpa.The result shows that the target material assembly welding performance that adopts diffusion welding method according to the invention to obtain is very reliable.
Embodiment two
Below be processing step and the welding result that 99.99% high-purity tungsten-titanium alloy target (wherein tungsten is 9: 1 with titanium purity ratio) and copper alloy backing plate carry out Diffusion Welding: wherein, said tungsten-titanium alloy target is circular, and the diameter of its preparatory faying face is 400mm.
(1) Surface Machining of tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate: to the preparatory faying face of preparatory faying face, copper alloy backing plate of tungsten-titanium alloy target; And the upper and lower end face of aluminium diffusion auxiliary layer carries out machining and makes it light, and makes the fineness of three's contact-making surface reach 0.30 μ m.
(2) Chemical cleaning of tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate: tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are adopted the hydrochloric acid clean surface, remove the soluble impurity on surface.The volume ratio of hydrogen chloride and water is 1: 5 in the hydrochloric acid.
(3) with the upper surface of said aluminium diffusion auxiliary layer, lower surface respectively with the placement of fitting relatively of the preparatory faying face of the preparatory faying face of said tungsten-titanium alloy target and copper alloy backing plate.Make said tungsten-titanium alloy target, aluminium spread auxiliary layer and copper alloy backing plate stacked combination.Wherein said aluminium diffusion auxiliary layer thickness is 6mm.
(4) with the said tungsten-titanium alloy target after the stacked combination, aluminium diffusion auxiliary layer and the copper alloy backing plate vacuum canning of packing into:
Earlier tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are packed in the vacuum canning of thin walled welds moulding, said vacuum canning is evacuated to 10 then by 1.0mm～2.0mm stainless steel welding fabrication
-3Holder～10
-5Holder, the bleeding point with vacuum canning adopts mechanical means to shut again, accomplishes the vacuum packaging of target to be welded and backboard, and last integral body is sent in the welding equipment and is welded.
(5) utilize heat and other static pressuring processes to carry out Diffusion Welding the tungsten-titanium alloy target be soldered to copper alloy backing plate:
To go up packaged product of step sends in the welding equipment; At first utilize forcing press to adopt the gas medium pressurization; The gas medium pressurization has each characteristic to the pressure same sex than the liquid pressurization; The welding of many contact-making surfaces when being fit to butt welding makes that the pressure on the mutual contact-making surface of tungsten-titanium alloy target in the vacuum canning, aluminium diffusion auxiliary layer and copper alloy backing plate reaches 120MPa;
And then welding temperature is promoted to 450 ℃, and under this environmental stress and temperature, kept 4 hours, make the contact-making surface thermal diffusion between mutually of tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate, combine, constitute target material assembly.
(6) accomplish heat and other static pressuring processes after, target material assembly is carried out air cooling, remove vacuum canning, finally obtain the product after the Diffusion Welding.
At last; Welding condition detection: utilize C-SCAN to detect the solder bond rate; Its solder bond rate of target material assembly that should be made up of tungsten-titanium alloy target and copper alloy backing plate reaches 99%, tests its hot strength again, and the mean intensity of its Diffusion Welding is 25Mpa; The result shows that the target material assembly welding performance that adopts diffusion welding method according to the invention to obtain is very reliable.
Embodiment three
Below be processing step and the welding result that 99.99% high-purity tungsten-titanium alloy target (wherein tungsten is 9: 1 with titanium purity ratio) and copper alloy backing plate carry out Diffusion Welding: wherein, said tungsten-titanium alloy target is circular, and the diameter of its preparatory faying face is 450mm.
(1) Surface Machining of tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate: to the preparatory faying face of preparatory faying face, copper alloy backing plate of tungsten-titanium alloy target; And the upper and lower end face of aluminium diffusion auxiliary layer carries out machining and makes it light, and makes the fineness of three's contact-making surface reach 0.32 μ m.
(2) Chemical cleaning of tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate: tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are adopted the hydrochloric acid clean surface, remove the soluble impurity on surface.The volume ratio of hydrogen chloride and water is 1: 5 in the hydrochloric acid.
(3) with the upper surface of said aluminium diffusion auxiliary layer, lower surface respectively with the placement of fitting relatively of the preparatory faying face of the preparatory faying face of said tungsten-titanium alloy target and copper alloy backing plate.Make said tungsten-titanium alloy target, aluminium spread auxiliary layer and copper alloy backing plate stacked combination.Wherein said aluminium diffusion auxiliary layer thickness is 7mm.
(4) with the said tungsten-titanium alloy target after the stacked combination, aluminium diffusion auxiliary layer and the copper alloy backing plate vacuum canning of packing into: earlier tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are packed in the vacuum canning of thin walled welds moulding; Said vacuum canning is evacuated to 10 then by 1.0mm～2.0mm stainless steel welding fabrication
-3Holder～10
-5Holder, the bleeding point with vacuum canning adopts mechanical means to shut again, accomplishes the vacuum packaging of target to be welded and backboard, and last integral body is sent in the welding equipment and is welded.
(5) utilize heat and other static pressuring processes to carry out Diffusion Welding the tungsten-titanium alloy target be soldered to copper alloy backing plate:
To go up packaged product of step sends in the welding equipment; At first utilize forcing press to adopt the gas medium pressurization; The gas medium pressurization has each characteristic to the pressure same sex than the liquid pressurization; The welding of many contact-making surfaces when being fit to butt welding makes that the pressure on the mutual contact-making surface of tungsten-titanium alloy target in the vacuum canning, aluminium diffusion auxiliary layer and copper alloy backing plate reaches 150MPa;
And then welding temperature is promoted to 600 ℃, and under this environmental stress and temperature, kept 5 hours, make the contact-making surface thermal diffusion between mutually of tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate, combine, constitute target material assembly.
(6) accomplish heat and other static pressuring processes after, target material assembly is carried out air cooling, remove vacuum canning, finally obtain the product after the Diffusion Welding.
At last; Welding condition detection: utilize C-SCAN to detect the solder bond rate; Its solder bond rate of target material assembly that should be made up of tungsten-titanium alloy target and copper alloy backing plate reaches 99%, tests its hot strength again, and the mean intensity of its Diffusion Welding is 25Mpa; The result shows that the target material assembly welding performance that adopts diffusion welding method according to the invention to obtain is very reliable.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (10)
1. tungsten-titanium alloy target and copper alloy backing plate diffusion welding method is characterized in that, comprising:
Tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are provided, and said tungsten-titanium alloy target comprises sputter face and preparatory faying face, and said copper alloy backing plate comprises the preparatory faying face and the back side; Said aluminium diffusion auxiliary layer comprises the upper and lower end face that the preparatory faying face structure with the preparatory faying face of said tungsten-titanium alloy target and copper alloy backing plate is complementary;
Send into welding equipment after being placed into tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate in the vacuum canning; Wherein, said aluminium diffusion auxiliary layer is between the preparatory faying face of the preparatory faying face of said tungsten-titanium alloy target and copper alloy backing plate; And the upper and lower end face of said aluminium diffusion auxiliary layer fits with the preparatory faying face of said tungsten-titanium alloy target and the preparatory faying face of copper alloy backing plate respectively;
Adopt heat and other static pressuring processes to carry out Diffusion Welding, the tungsten-titanium alloy target is soldered to copper alloy backing plate to form target material assembly;
After accomplishing welding, carry out air cooling and remove vacuum canning taking-up target material assembly.
2. tungsten-titanium alloy target according to claim 1 and copper alloy backing plate diffusion welding method is characterized in that described copper alloy backing plate comprises the copper alloy of oxygen-free copper or containing metal chromium.
3. tungsten-titanium alloy target according to claim 1 and copper alloy backing plate diffusion welding method is characterized in that the area of the preparatory faying face of said tungsten-titanium alloy target comprises 0.10m
2～0.16m
2
4. tungsten-titanium alloy target according to claim 1 and copper alloy backing plate diffusion welding method is characterized in that, said tungsten-titanium alloy target is circular target, and its diameter comprises 350mm～450mm, and thickness comprises 5～12mm.
5. tungsten-titanium alloy target according to claim 1 and copper alloy backing plate diffusion welding method; It is characterized in that; In said heat and other static pressuring processes; The vacuum canning that inside is equipped with said tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate is incubated 3 to 5 hours under 300 ℃～600 ℃, 50Mpa～160Mpa condition, accomplish said tungsten-titanium alloy target and copper alloy backing plate Diffusion Welding.
6. tungsten-titanium alloy target according to claim 5 and copper alloy backing plate diffusion welding method is characterized in that, said heat and other static pressuring processes condition temperature is controlled in 400 ℃～480 ℃.
7. according to each described tungsten-titanium alloy target and copper alloy backing plate diffusion welding method in the claim 1 to 6, it is characterized in that said aluminium diffusion auxiliary layer thickness is 5mm to 7mm.
8. tungsten-titanium alloy target according to claim 1 and copper alloy backing plate diffusion welding method; It is characterized in that; Said vacuum canning adopts 1.0mm to 2.0mm stainless steel welding fabrication; And in said heat and other static pressuring processes, after said tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are packed said vacuum canning into, said vacuum canning is evacuated to 10
-3Holder to 10
-4Holder, sealing again.
9. tungsten-titanium alloy target according to claim 1 and copper alloy backing plate diffusion welding method; It is characterized in that; Before said tungsten-titanium alloy target, aluminium diffusion auxiliary layer and copper alloy backing plate are put into said vacuum canning; Adopt machining with the preparatory faying face of tungsten-titanium alloy target, the preparatory faying face of copper alloy backing plate, and the fineness of the upper and lower end face of aluminium diffusion auxiliary layer is machined to 0.2 μ m～3.2 μ m.
10. tungsten-titanium alloy target according to claim 9 and copper alloy backing plate diffusion welding method; It is characterized in that; After said machining, the volume ratio that adopts hydrogen chloride and water is that 1: 5 hydrochloric acid cleaning fluid is removed tungsten-titanium alloy, copper alloy target and aluminium diffusion auxiliary layer surface impurity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110460946.2A CN102554455B (en) | 2011-12-31 | 2011-12-31 | Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110460946.2A CN102554455B (en) | 2011-12-31 | 2011-12-31 | Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102554455A true CN102554455A (en) | 2012-07-11 |
| CN102554455B CN102554455B (en) | 2015-07-08 |
Family
ID=46401797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110460946.2A Active CN102554455B (en) | 2011-12-31 | 2011-12-31 | Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102554455B (en) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103071791A (en) * | 2013-01-18 | 2013-05-01 | 航天材料及工艺研究所 | Forming method of TiAl pipe target material in large length-diameter ratio |
| CN103331517A (en) * | 2013-06-20 | 2013-10-02 | 安泰科技股份有限公司 | Tungsten-base heavy alloy hot isostatic pressing diffusion connecting welding method |
| GB2510894A (en) * | 2013-02-18 | 2014-08-20 | Messier Dowty Ltd | A method of manufacture of an aircraft landing gear component |
| CN104259644A (en) * | 2014-07-24 | 2015-01-07 | 有研亿金新材料有限公司 | Welding method of tungsten-titanium alloy target |
| CN104690417A (en) * | 2013-12-05 | 2015-06-10 | 有研亿金新材料股份有限公司 | Welding method for nickel or nickel alloy target and back panel |
| WO2015085650A1 (en) * | 2013-12-12 | 2015-06-18 | 有研亿金新材料有限公司 | Method for diffusion welding w-ti alloy target material assembly |
| CN104741774A (en) * | 2013-12-31 | 2015-07-01 | 宁波江丰电子材料股份有限公司 | Welding method for tungsten-titanium-copper target material component |
| CN105798409A (en) * | 2014-12-31 | 2016-07-27 | 宁波江丰电子材料股份有限公司 | Welding method of target module |
| CN106541249A (en) * | 2015-09-17 | 2017-03-29 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN106702333A (en) * | 2015-07-29 | 2017-05-24 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target material assembly |
| CN107663631A (en) * | 2016-07-29 | 2018-02-06 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN108067724A (en) * | 2016-11-15 | 2018-05-25 | 核工业西南物理研究院 | A kind of hot isostatic pressing diffusion connection method of copper chromium zirconium-stainless steel clad plate |
| CN109175568A (en) * | 2018-11-01 | 2019-01-11 | 中国电子科技集团公司第三十八研究所 | A kind of method for welding of large-size antennae and micro-strip plate large area ground connection |
| CN111660003A (en) * | 2020-06-22 | 2020-09-15 | 浙江最成半导体科技有限公司 | Sputtering target welding method |
| CN111843161A (en) * | 2020-07-17 | 2020-10-30 | 宁波江丰电子材料股份有限公司 | WTi target and copper back plate welding method |
| CN112091401A (en) * | 2020-09-11 | 2020-12-18 | 宁波江丰电子材料股份有限公司 | Titanium-aluminum alloy target material and welding method thereof |
| CN112589099A (en) * | 2020-12-15 | 2021-04-02 | 江苏应用元素科技有限公司 | Method for reducing production cost of multi-arc chromium target |
| CN112846643A (en) * | 2020-12-08 | 2021-05-28 | 北京星航机电装备有限公司 | Forming method and forming device for titanium alloy thin-wall hollow structure |
| CN112935512A (en) * | 2021-03-26 | 2021-06-11 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for cobalt target and copper-chromium alloy back plate |
| CN113084323A (en) * | 2021-04-30 | 2021-07-09 | 宁波江丰电子材料股份有限公司 | Welding structure and welding method of tungsten target assembly |
| CN113927033A (en) * | 2020-06-29 | 2022-01-14 | 机械科学研究总院集团有限公司 | Method for composite forming of dissimilar alloy by adopting powder metallurgy process |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6085966A (en) * | 1996-12-04 | 2000-07-11 | Sony Corporation | Sputtering target assembly production method |
| JP2001295040A (en) * | 2000-04-13 | 2001-10-26 | Toshiba Corp | Sputtering target and backing plate material |
| US20030134143A1 (en) * | 2000-10-31 | 2003-07-17 | Kunihiro Oda | Tantalum or tungsten target-copper alloy backing plate assembly and production method therefor |
| US6619537B1 (en) * | 2000-06-12 | 2003-09-16 | Tosoh Smd, Inc. | Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers |
| JP2007245211A (en) * | 2006-03-17 | 2007-09-27 | Mitsubishi Materials Corp | Manufacturing method of target having backing plate |
| CN101543934A (en) * | 2009-03-12 | 2009-09-30 | 宁波江丰电子材料有限公司 | Target material structure and method for producing the same |
| CN101579782A (en) * | 2009-04-20 | 2009-11-18 | 宁波江丰电子材料有限公司 | Welding method of copper target blank and copper alloy backing plate |
| CN101648320A (en) * | 2009-05-08 | 2010-02-17 | 宁波江丰电子材料有限公司 | Welding method of target materials and back plates |
| CN101680082A (en) * | 2007-06-18 | 2010-03-24 | 应用材料股份有限公司 | Sputtering target having increased life and sputtering uniformity |
-
2011
- 2011-12-31 CN CN201110460946.2A patent/CN102554455B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6085966A (en) * | 1996-12-04 | 2000-07-11 | Sony Corporation | Sputtering target assembly production method |
| JP2001295040A (en) * | 2000-04-13 | 2001-10-26 | Toshiba Corp | Sputtering target and backing plate material |
| US6619537B1 (en) * | 2000-06-12 | 2003-09-16 | Tosoh Smd, Inc. | Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers |
| US20030134143A1 (en) * | 2000-10-31 | 2003-07-17 | Kunihiro Oda | Tantalum or tungsten target-copper alloy backing plate assembly and production method therefor |
| JP2007245211A (en) * | 2006-03-17 | 2007-09-27 | Mitsubishi Materials Corp | Manufacturing method of target having backing plate |
| CN101680082A (en) * | 2007-06-18 | 2010-03-24 | 应用材料股份有限公司 | Sputtering target having increased life and sputtering uniformity |
| CN101543934A (en) * | 2009-03-12 | 2009-09-30 | 宁波江丰电子材料有限公司 | Target material structure and method for producing the same |
| CN101579782A (en) * | 2009-04-20 | 2009-11-18 | 宁波江丰电子材料有限公司 | Welding method of copper target blank and copper alloy backing plate |
| CN101648320A (en) * | 2009-05-08 | 2010-02-17 | 宁波江丰电子材料有限公司 | Welding method of target materials and back plates |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103071791A (en) * | 2013-01-18 | 2013-05-01 | 航天材料及工艺研究所 | Forming method of TiAl pipe target material in large length-diameter ratio |
| GB2510894A (en) * | 2013-02-18 | 2014-08-20 | Messier Dowty Ltd | A method of manufacture of an aircraft landing gear component |
| GB2510894B (en) * | 2013-02-18 | 2015-01-14 | Messier Dowty Ltd | A method of manufacture of an aircraft landing gear component |
| CN103331517B (en) * | 2013-06-20 | 2016-01-20 | 安泰科技股份有限公司 | A kind of tungsten Heavy Alloys high temperature insostatic pressing (HIP) diffusion connects the method for weldering |
| CN103331517A (en) * | 2013-06-20 | 2013-10-02 | 安泰科技股份有限公司 | Tungsten-base heavy alloy hot isostatic pressing diffusion connecting welding method |
| CN104690417B (en) * | 2013-12-05 | 2017-09-29 | 有研亿金新材料股份有限公司 | A kind of welding method of nickel or nickel alloy target and backboard |
| CN104690417A (en) * | 2013-12-05 | 2015-06-10 | 有研亿金新材料股份有限公司 | Welding method for nickel or nickel alloy target and back panel |
| WO2015085650A1 (en) * | 2013-12-12 | 2015-06-18 | 有研亿金新材料有限公司 | Method for diffusion welding w-ti alloy target material assembly |
| CN104741774A (en) * | 2013-12-31 | 2015-07-01 | 宁波江丰电子材料股份有限公司 | Welding method for tungsten-titanium-copper target material component |
| CN104259644A (en) * | 2014-07-24 | 2015-01-07 | 有研亿金新材料有限公司 | Welding method of tungsten-titanium alloy target |
| CN105798409A (en) * | 2014-12-31 | 2016-07-27 | 宁波江丰电子材料股份有限公司 | Welding method of target module |
| CN105798409B (en) * | 2014-12-31 | 2018-04-13 | 宁波江丰电子材料股份有限公司 | The welding method of target material assembly |
| CN106702333A (en) * | 2015-07-29 | 2017-05-24 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target material assembly |
| CN106541249A (en) * | 2015-09-17 | 2017-03-29 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN107663631A (en) * | 2016-07-29 | 2018-02-06 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN108067724A (en) * | 2016-11-15 | 2018-05-25 | 核工业西南物理研究院 | A kind of hot isostatic pressing diffusion connection method of copper chromium zirconium-stainless steel clad plate |
| CN109175568A (en) * | 2018-11-01 | 2019-01-11 | 中国电子科技集团公司第三十八研究所 | A kind of method for welding of large-size antennae and micro-strip plate large area ground connection |
| CN111660003A (en) * | 2020-06-22 | 2020-09-15 | 浙江最成半导体科技有限公司 | Sputtering target welding method |
| CN113927033A (en) * | 2020-06-29 | 2022-01-14 | 机械科学研究总院集团有限公司 | Method for composite forming of dissimilar alloy by adopting powder metallurgy process |
| CN111843161A (en) * | 2020-07-17 | 2020-10-30 | 宁波江丰电子材料股份有限公司 | WTi target and copper back plate welding method |
| CN111843161B (en) * | 2020-07-17 | 2022-02-08 | 宁波江丰电子材料股份有限公司 | WTi target and copper back plate welding method |
| CN112091401A (en) * | 2020-09-11 | 2020-12-18 | 宁波江丰电子材料股份有限公司 | Titanium-aluminum alloy target material and welding method thereof |
| CN112091401B (en) * | 2020-09-11 | 2022-04-12 | 宁波江丰电子材料股份有限公司 | Titanium-aluminum alloy target material and welding method thereof |
| CN112846643A (en) * | 2020-12-08 | 2021-05-28 | 北京星航机电装备有限公司 | Forming method and forming device for titanium alloy thin-wall hollow structure |
| CN112589099A (en) * | 2020-12-15 | 2021-04-02 | 江苏应用元素科技有限公司 | Method for reducing production cost of multi-arc chromium target |
| CN112935512A (en) * | 2021-03-26 | 2021-06-11 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for cobalt target and copper-chromium alloy back plate |
| CN113084323A (en) * | 2021-04-30 | 2021-07-09 | 宁波江丰电子材料股份有限公司 | Welding structure and welding method of tungsten target assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102554455B (en) | 2015-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102554455A (en) | Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate | |
| CN101579782B (en) | Welding method of copper target blank and copper alloy backing plate | |
| CN101564793A (en) | Welding method of aluminum target blank and aluminum alloy backboard | |
| CN104551381B (en) | The welding method of tungsten target material assembly | |
| CN104259644B (en) | A kind of welding method of tungsten-titanium alloy target | |
| CN102500908A (en) | Welding method of tungsten target assembly | |
| CN101543923B (en) | Method for welding target material and back board | |
| CN105798409A (en) | Welding method of target module | |
| CN103801820A (en) | Hot isostatic pressure diffusion welding method for tantalum target and aluminum back plate | |
| CN110756937A (en) | Brazing method for target and back plate | |
| CN101543924A (en) | Method for welding target material and back board | |
| CN101543937A (en) | Method for welding target material and back board | |
| CN102366856A (en) | Welding method of cobalt target assembly | |
| CN101648303A (en) | Welding method of target materials and back plates | |
| CN104588810B (en) | The welding method of aluminium target material assembly | |
| CN202922105U (en) | Connecting structure of target and back plate | |
| CN102489865A (en) | Welding method for copper back plate and target | |
| CN112935512A (en) | Diffusion welding method for cobalt target and copper-chromium alloy back plate | |
| CN109972100B (en) | Preparation method of tubular chromium target | |
| CN112676782B (en) | Method for assembling titanium target and copper back plate | |
| CN102489813A (en) | Vacuum active brazing process of molybdenum-copper alloys and stainless steel | |
| CN104588896A (en) | Welding method of aluminum target component | |
| CN101648320B (en) | Welding method of target materials and back plates | |
| CN104607878B (en) | The preparation method of W/Cu/CuCrZr composite components | |
| CN101648307A (en) | Manufacturing method of target material assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 315400 Ningbo City, Yuyao Province Economic Development Zone, state science and Technology Industrial Park Road, No. 198, No. Applicant after: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Address before: 315400 Ningbo City, Yuyao Province Economic Development Zone, state science and Technology Industrial Park Road, No. 198, No. Applicant before: Ningbo Jiangfeng Electronic Materials Co., Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |