CN102489865A - Welding method for copper back plate and target - Google Patents
Welding method for copper back plate and target Download PDFInfo
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- CN102489865A CN102489865A CN2011103584129A CN201110358412A CN102489865A CN 102489865 A CN102489865 A CN 102489865A CN 2011103584129 A CN2011103584129 A CN 2011103584129A CN 201110358412 A CN201110358412 A CN 201110358412A CN 102489865 A CN102489865 A CN 102489865A
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Abstract
The invention provides a welding method for a copper back plate and a target, comprising the following steps of: placing the copper back plate and the target in a sheath, and disposing a ventilation tube in the sheath; placing the sheath in a furnace, and vacuumizing the sheath via the ventilation tube; after the interior of the sheath achieves a certain vacuum degree, increasing the temperature of the furnace to a certain temperature, continuously insulating the furnace for a period of time, and still vacuumizing the sheath during the insulating period of the furnace; sealing the ventilation tube in the sheath; and performing hot isostatic pressing welding on the sheath provided with the copper back plate and the target in the interior, so as to weld the copper back plate with the target together. During the process of vacuumizing the sheath, the sheath is continuously kept in a high-temperature environment, so that liquid water or other liquids in the interior of the sheath form steam capable of being extracted away, so as to form a real vacuum environment in the interior of the sheath, thereby obtaining a target assembly with high welding strength and yield.
Description
Technical field
The present invention relates to the semiconductor sputtering target material and make the field, relate in particular to the welding method of a kind of copper backboard and target.
Background technology
In semi-conductor industry, target material assembly is to be made up of the target that meets sputtering performance and the backboard that can combine and have certain intensity with said target.Backboard can be assembled in the sputter base station at said target material assembly and play a supporting role, and has the effect of conduction heat.In sputter procedure, the residing working environment of target material assembly is more abominable.For example, the residing environment temperature of target material assembly is higher, for example 300 ℃ to 600 ℃; In addition, a side blow of target material assembly is cold by force with cooling water, and opposite side then is under the high vacuum environment of 10-9Pa, and relative two sides at target material assembly are formed with huge pressure differential thus; Have, target material assembly is in high voltage electric field, the magnetic field again, receives the bombardment of various particles.Under rugged environment like this; If the bond strength in the target material assembly between target and the backboard is relatively poor; To cause target material assembly under heating condition, to be out of shape, to ftracture and come off mutually with the backboard that combines; Make sputter can't reach the sputter effect of uniform, also may cause damage simultaneously the sputter base station.
High-purity target is widely used in semiconductor chip and makes the field, and along with the development of semicon industry, the consumption of high-purity target grows with each passing day.Owing to have sufficient intensity, and heat conduction, electric conductivity are also higher, and copper (CuZn alloy or CuCr alloy) backboard is the maximum backboard of use amount in the target manufacturing industry.It can realize that welding is to form target material assembly with multiple high-purity target such as titanium (Ti), tantalum (Ta), aluminium (Al).
The welding manner of copper backboard and target has multiple, like melting welding, soldering, Diffusion Welding (Diffusion Bonding), high temperature insostatic pressing (HIP) (Hot Isostatic Pressing) welding or the like.Because copper causes the weld strength of target material assembly not high when very easily oxidized so that copper backboard welds in air with target in air easily, therefore, copper backboard and target need weld under vacuum environment.High temperature insostatic pressing (HIP) welding can be satisfied this welding condition, and this welding procedure also has little, the weld strength advantages of higher of target material assembly distortion, and therefore, high temperature insostatic pressing (HIP) is welded into a kind of preferred weld mode of copper backboard and target.
The general making flow process of high temperature insostatic pressing (HIP) welding is following: copper backboard and target are put into jacket; The jacket that inside is provided with copper backboard and target vacuumizes; Jacket is sealed so that extraneous gas can't get in the jacket; The jacket that inside is provided with copper backboard and target carries out the high temperature insostatic pressing (HIP) welding to realize the welding of copper backboard and target.But find that in actual production process the yield rate of the target material assembly that is formed by above-mentioned making flow process is lower, generally can only reach about 70%, and the weld strength of target material assembly is lower, generally can only reach about 70Mpa.
Therefore, studying a kind of effective welding manner makes the target material assembly that is made up of copper backboard and target have higher weld strength and the yield rate very necessity that just seems.
Summary of the invention
The problem that the present invention will solve is that the target material assembly of formation has low weld strength and yield rate after utilizing traditional high temperature insostatic pressing (HIP) welding method that copper backboard and target are welded together.
For addressing the above problem, the invention provides the welding method of a kind of copper backboard and target, it may further comprise the steps:
Copper backboard, target are put into jacket, and said jacket is provided with breather pipe;
There is the jacket of said copper backboard, target to put into stove set inside, said jacket vacuumized through said breather pipe;
After treating that said jacket inside reaches the certain vacuum degree, make the temperature of said stove be elevated to uniform temperature, and make said stove continue insulation a period of time, between the soak of stove, still said jacket is vacuumized;
Extraneous gas seals said breather pipe so that can't get in the said jacket;
The jacket that inside is provided with said copper backboard, target carries out the high temperature insostatic pressing (HIP) welding so that said copper backboard and target weld together.
Optional, utilize composite molecular pump that said jacket is vacuumized, in vacuum, said composite molecular pump connects said breather pipe.
Optional, said certain vacuum degree is less than 2 * 10
-3Pa.
Optional, said uniform temperature is 400 ℃.
Optional, said a period of time is 3h.
Optional, copper backboard, target are put into before the jacket, said copper backboard and target are carried out surface treatment, so that have better binding ability between the preparatory mating surface of copper backboard and target.
Compared with prior art, the present invention has the following advantages:
In the process that the jacket that inside is provided with copper backboard, target vacuumizes, make jacket continue to place hot environment so that inner aqueous water or other liquid formation steam of jacket also can be taken away, thereby make the real vacuum environment of the inner formation of jacket.After being opposite to copper backboard and target in the vacuum environment and carrying out the high temperature insostatic pressing (HIP) welding, the weld strength and the yield rate of target material assembly are higher.
Description of drawings
Fig. 1 is the welding process figure of copper backboard and target among the embodiment of welding method of copper backboard of the present invention and target.
The specific embodiment
Described in background technology, utilize the high temperature insostatic pressing (HIP) welding procedure that the general making flow process that copper backboard and target weld together is following in the prior art: copper backboard and target are put into jacket; The jacket that inside is provided with copper backboard and target vacuumizes; Jacket is sealed so that extraneous gas can't get in the jacket; The jacket that inside is provided with copper backboard and target carries out the high temperature insostatic pressing (HIP) welding to realize the welding of copper backboard and target.This case inventor finds through constantly analyzing with experiment; The reason that the target material assembly that above-mentioned preparation method forms has low weld strength and yield rate is following: in order to have better binding ability between the preparatory mating surface that can make copper backboard and target; Before copper backboard and target are put into jacket; Need the preparatory mating surface of copper backboard, target is carried out surface treatment; Comprise: the preparatory mating surface to copper backboard, target carries out machining so that the fineness on surface is higher, utilizes organic solvent or acid solution or both mixed solutions that copper backboard, target are cleaned to remove Superficial Foreign Body then.Then through placing the mode that vacuumizes and then seal jacket in the jacket and to jacket to place vacuum environment copper backboard and target to realize copper backboard and target.But the above-mentioned process that vacuumizes is carried out at normal temperatures, and copper backboard and target residual aqueous water or other liquid in surface treatment process can not be processed out, and promptly copper backboard and target are not to place real vacuum environment.Copper backboard and target are being carried out in the process of high temperature insostatic pressing (HIP) welding; Because copper backboard and target are in the hot environment; When temperature reaches the boiling point of aqueous water and other liquid; Aqueous water and other liquid will form steam, and pollute the solder side of copper backboard and target, thereby reduce the weld strength and the yield rate of target material assembly.The inventor relatively learns through experiment repeatedly, when the inner aqueous water of jacket and other liquid component more after a little while, the weld strength and the yield rate of the target material assembly that is formed by above-mentioned preparation method are high more.
For this reason; The present invention heats to remove jacket inner aqueous water and other liquid jacket in the process that jacket is vacuumized; Thereby guarantee that copper backboard and target place real vacuum environment, and then obtain weld strength and the high target material assembly of yield rate.
Fig. 1 is the flow chart of the welding method of copper backboard and target in the embodiments of the invention, and as shown in Figure 1, this welding method may further comprise the steps:
S1. copper backboard and target are carried out surface treatment, so that have better binding ability between the preparatory mating surface of copper backboard and target.
S2. copper backboard, target are put into jacket, jacket is provided with breather pipe so that the gas in the jacket is taken away to form vacuum environment.
S3. there is the jacket of copper backboard, target to put into stove set inside, jacket is vacuumized; After treating that jacket inside reaches the certain vacuum degree, make the temperature of stove be elevated to uniform temperature, and make stove continue insulation a period of time, between the soak of stove, still jacket is vacuumized, the gas in jacket is all taken away.
S4. seal the breather pipe of jacket, so that extraneous gas can't get in the jacket.
S5. the jacket that inside is provided with copper backboard, target carries out the high temperature insostatic pressing (HIP) welding so that copper backboard and target weld together.
Below in conjunction with accompanying drawing, through specific embodiment, technical scheme of the present invention is carried out clear, complete description, obviously, but described embodiment only is the part of embodiment of the present invention, rather than they are whole.According to these embodiment, those of ordinary skill in the art belongs to protection scope of the present invention need not obtainable all other embodiments under the prerequisite of creative work.
Execution in step S1 at first: copper backboard and target are carried out surface treatment, so that have better binding ability between the preparatory mating surface of copper backboard and target.
Copper backboard, target are provided, and the copper backboard here can be the fine copper backboard, also can be the copper alloy backing plate that is doped with other metal.Before copper backboard and target are put into jacket, can carry out surface treatment to copper backboard and target.At first can carry out machining, so that the fineness of mating surface is higher in advance to the preparatory mating surface of copper backboard, target; Then, utilize organic solvent or acid solution or both mixed liquors that copper backboard, target are carried out surface clean, to remove the foreign material of preparatory mating surface.Organic solvent can be any in alcohol, isobutanol (IBA), isopropyl alcohol (IPA) or the mixed propyl alcohol (IPB).Acid solution can be selected hydrofluoric acid (HF), nitric acid (HNO
3), hydrochloric acid (HCL), sulfuric acid (H
2SO
4) or comprise the mixed solvent of their any proportionings.After copper backboard and target carried out surface treatment, has better binding ability between the preparatory mating surface of copper backboard and target in the later welded process.
Follow execution in step S2: copper backboard, target are put into jacket, and jacket is provided with breather pipe so that the gas in the jacket is taken away to form vacuum environment.
Copper backboard, target are put into jacket, and jacket is provided with breather pipe so that the gas in the jacket can be taken away, so that the inner vacuum environment that forms of jacket.The shape of jacket needs be provided with according to the shape that forms target material assembly in advance, and copper backboard, target are placed after the jacket, and jacket can fit tightly built-in target material assembly.Jacket can be formed by the welding of low-carbon (LC) steel or stainless steel.
Follow execution in step S3: have the jacket of copper backboard, target to put into stove set inside, jacket is vacuumized; After treating that jacket inside reaches the certain vacuum degree, make the temperature of stove be elevated to uniform temperature, and make stove continue insulation a period of time, between the soak of stove, still jacket is vacuumized, the gas in jacket is all taken away.
There is the jacket of copper backboard, target to put into stove set inside, jacket is vacuumized.After treating that jacket inside reaches the certain vacuum degree, make the temperature of stove be elevated to uniform temperature, and make stove continue insulation a period of time.Because copper backboard and target continue to place hot environment, so aqueous water or other liquid in the copper backboard, target can form steam.Between the soak of stove, still jacket is vacuumized, in the process that vacuumizes, the inner steam that forms of jacket can be taken away.Because the temperature retention time of stove is very long, can guarantee that in the meantime the gas in the jacket is all taken away, to form real vacuum environment.
For efficient and the cost of manufacture that guarantees vacuum simultaneously, in the present embodiment, above-mentioned certain vacuum degree is less than 2 * 10
-3Pa.
Inventor's process constantly experiment is learnt, when the temperature of above-mentioned stove is increased to 400 ℃, can guarantee that aqueous water or other liquid formation steam that jacket is inner are also taken away, can control cost of manufacture simultaneously; When the temperature retention time of above-mentioned stove is 3h, can guarantee that the steam in the jacket is all taken away, to form real vacuum environment, for the welding of subsequent copper backboard and target is prepared.
Multiple mode capable of using vacuumizes jacket, and in the present embodiment, composite molecular pump capable of using vacuumizes jacket.That is, in the process that vacuumizes, composite molecular pump connects the breather pipe of jacket, and gas can be got in the composite molecular pump by breather pipe.Composite molecular pump has lot of advantages, as has the higher speed of evacuation, the effect or the like of bleeding preferably.Utilize composite molecular pump to continue jacket is vacuumized, can guarantee that jacket inside can form real vacuum environment.
Follow execution in step S4: the breather pipe of sealing jacket, so that extraneous gas can't get in the jacket.
Behind the breather pipe of sealing jacket, stop jacket being vacuumized.
Last execution in step S5: the jacket that inside is provided with copper backboard, target carries out the high temperature insostatic pressing (HIP) welding so that copper backboard and target weld together.
Carry out in the process of high temperature insostatic pressing (HIP) welding at the jacket that inside is provided with copper backboard, target, jacket places high temperature and high pressure environment.Because jacket is to be formed by the welding of the low-carbon (LC) steel or stainless steel of very thin thickness; Externally under the effect of environmental stress; The faying face place of copper backboard and target can form pressure; Because jacket is arranged in hot environment for a long time, plastic deformation, atom diffusion can take place in the faying face place of copper backboard and target, finally realize the reliable soldering of copper backboard and target simultaneously.
Welding can make to be wrapped in the air and cool off after accomplishing, and after the cooling, removes jacket to obtain target material assembly.
After obtaining target material assembly, the inventor tests it, finds that the weld strength of target material assembly can be up to 150Mpa, and yield rate is up to 98%.
Compared with prior art, the invention has the advantages that:
In the process that the jacket that inside is provided with copper backboard, target vacuumizes, make jacket continue to place hot environment so that inner aqueous water or other liquid formation steam of jacket also can be taken away, thereby make the real vacuum environment of the inner formation of jacket.After being opposite to copper backboard and target in the vacuum environment and carrying out the high temperature insostatic pressing (HIP) welding, the weld strength and the yield rate of target material assembly are higher.
Above-mentioned explanation through embodiment should be able to make this area professional and technical personnel understand the present invention better, and can reproduce and use the present invention.Those skilled in the art can under the situation that does not break away from essence of the present invention and scope, do various changes to the foregoing description according to the principle described in this paper and modification is conspicuous.Therefore, the present invention should not be understood that to be limited to the foregoing description shown in this paper, and its protection domain should be defined by appending claims.
Claims (6)
1. the welding method of copper backboard and target is characterized in that, may further comprise the steps:
Copper backboard, target are put into jacket, and said jacket is provided with breather pipe;
There is the jacket of said copper backboard, target to put into stove set inside, said jacket vacuumized through said breather pipe;
After treating that said jacket inside reaches the certain vacuum degree, make the temperature of said stove be elevated to uniform temperature, and make said stove continue insulation a period of time, between the soak of stove, still said jacket is vacuumized;
Extraneous gas seals said breather pipe so that can't get in the said jacket;
The jacket that inside is provided with said copper backboard, target carries out the high temperature insostatic pressing (HIP) welding so that said copper backboard and target weld together.
2. welding method according to claim 1 is characterized in that, utilizes composite molecular pump that said jacket is vacuumized, and in vacuum, said composite molecular pump connects said breather pipe.
3. welding method according to claim 1 is characterized in that, said certain vacuum degree is less than 2 * 10
-3Pa.
4. welding method according to claim 1 is characterized in that, said uniform temperature is 400 ℃.
5. welding method according to claim 1 is characterized in that, said a period of time is 3h.
6. welding method according to claim 1 is characterized in that, copper backboard, target are put into before the jacket, said copper backboard and target is carried out surface treatment, so that have better binding ability between the preparatory mating surface of copper backboard and target.
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|---|---|---|---|
| CN2011103584129A CN102489865A (en) | 2011-11-11 | 2011-11-11 | Welding method for copper back plate and target |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103584129A CN102489865A (en) | 2011-11-11 | 2011-11-11 | Welding method for copper back plate and target |
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| CN102489865A true CN102489865A (en) | 2012-06-13 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102886615A (en) * | 2012-10-22 | 2013-01-23 | 苏州奔一机电有限公司 | Fusion welding process for metals |
| CN103071791A (en) * | 2013-01-18 | 2013-05-01 | 航天材料及工艺研究所 | Forming method of TiAl pipe target material in large length-diameter ratio |
| CN103212912A (en) * | 2013-04-22 | 2013-07-24 | 安泰科技股份有限公司 | Method for manufacturing nuclear-power-used thrust disc by means of hot isostatic pressing diffusion bonding |
| CN103801820A (en) * | 2012-11-13 | 2014-05-21 | 宁波江丰电子材料有限公司 | Hot isostatic pressure diffusion welding method for tantalum target and aluminum back plate |
| CN104178739A (en) * | 2014-08-11 | 2014-12-03 | 昆山海普电子材料有限公司 | Nickel-platinum alloy target with copper alloy back plate and preparation method thereof |
| CN104625389A (en) * | 2014-12-22 | 2015-05-20 | 有研亿金新材料有限公司 | Welding method of aluminum alloy sputtering target material for integrated circuit package material |
| CN104741776A (en) * | 2013-12-31 | 2015-07-01 | 宁波江丰电子材料股份有限公司 | Welding method of target component |
| CN105463389A (en) * | 2014-09-03 | 2016-04-06 | 宁波江丰电子材料股份有限公司 | Improving method for backboard defects |
| CN106271148A (en) * | 2015-05-12 | 2017-01-04 | 宁波江丰电子材料股份有限公司 | The welding method of target material assembly |
| CN105624622B (en) * | 2014-11-26 | 2018-02-09 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN112676782A (en) * | 2020-12-25 | 2021-04-20 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and copper back plate |
| CN113263163A (en) * | 2021-04-28 | 2021-08-17 | 深圳大学 | Method for efficiently eliminating gas adsorbed on solid surface and application thereof |
| CN116460407A (en) * | 2023-04-21 | 2023-07-21 | 西安嘉业航空科技有限公司 | Copper alloy and alloy steel workpiece and hot isostatic pressing diffusion connection method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102886615A (en) * | 2012-10-22 | 2013-01-23 | 苏州奔一机电有限公司 | Fusion welding process for metals |
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| CN103071791A (en) * | 2013-01-18 | 2013-05-01 | 航天材料及工艺研究所 | Forming method of TiAl pipe target material in large length-diameter ratio |
| CN103212912A (en) * | 2013-04-22 | 2013-07-24 | 安泰科技股份有限公司 | Method for manufacturing nuclear-power-used thrust disc by means of hot isostatic pressing diffusion bonding |
| CN104741776A (en) * | 2013-12-31 | 2015-07-01 | 宁波江丰电子材料股份有限公司 | Welding method of target component |
| CN104741776B (en) * | 2013-12-31 | 2016-07-06 | 宁波江丰电子材料股份有限公司 | The welding method of target material assembly |
| CN104178739A (en) * | 2014-08-11 | 2014-12-03 | 昆山海普电子材料有限公司 | Nickel-platinum alloy target with copper alloy back plate and preparation method thereof |
| CN105463389A (en) * | 2014-09-03 | 2016-04-06 | 宁波江丰电子材料股份有限公司 | Improving method for backboard defects |
| CN105624622B (en) * | 2014-11-26 | 2018-02-09 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN104625389A (en) * | 2014-12-22 | 2015-05-20 | 有研亿金新材料有限公司 | Welding method of aluminum alloy sputtering target material for integrated circuit package material |
| CN106271148A (en) * | 2015-05-12 | 2017-01-04 | 宁波江丰电子材料股份有限公司 | The welding method of target material assembly |
| CN112676782A (en) * | 2020-12-25 | 2021-04-20 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and copper back plate |
| CN113263163A (en) * | 2021-04-28 | 2021-08-17 | 深圳大学 | Method for efficiently eliminating gas adsorbed on solid surface and application thereof |
| CN116460407A (en) * | 2023-04-21 | 2023-07-21 | 西安嘉业航空科技有限公司 | Copper alloy and alloy steel workpiece and hot isostatic pressing diffusion connection method thereof |
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Application publication date: 20120613 |