CN112743216A - Welding method for target and back plate - Google Patents
Welding method for target and back plate Download PDFInfo
- Publication number
- CN112743216A CN112743216A CN202011593875.9A CN202011593875A CN112743216A CN 112743216 A CN112743216 A CN 112743216A CN 202011593875 A CN202011593875 A CN 202011593875A CN 112743216 A CN112743216 A CN 112743216A
- Authority
- CN
- China
- Prior art keywords
- target
- back plate
- welding
- target material
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/021—Isostatic pressure welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
- B23K20/026—Thermo-compression bonding with diffusion of soldering material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
Abstract
The invention provides a welding method of a target and a back plate, which comprises the following steps: assembling the target material, the intermediate layer and the back plate to obtain an assembly component; the target material is positioned between the two intermediate layers, the two back plates are symmetrically arranged on the outer sides of the two intermediate layers, and the target material and the two intermediate layers are wrapped; and sequentially performing sheath welding, degassing and hot isostatic pressing on the obtained assembly, and then stripping the back plate and the middle layer on one side of the target sputtering surface of the assembly to obtain the target assembly. The welding method effectively solves the problem of target deformation in the welding process through the design of the welding structure, simultaneously ensures the welding bonding rate and the welding bonding strength, and has good industrial application prospect.
Description
Technical Field
The invention belongs to the technical field of target manufacturing, and particularly relates to a method for welding a target and a back plate.
Background
As the fabrication of semiconductor integrated circuit chips is moving toward large-scale fabrication, the size and sputtering power of sputtering targets are also increasing. The requirements for the microstructure of the sputtering target and the connection between the target and the backing plate are also increasing. The connection technology of the large-area target and the back plate becomes a key technology for preparing the target assembly. In the sputtering process, the target assembly is used as a cathode and has excellent electrical conductivity, and meanwhile, the target assembly also has excellent thermal conductivity in order to discharge heat generated by high-energy-state ions bombarding the surface of the target at high speed. Therefore, the connection between the target material and the back plate needs to have certain bonding strength to avoid the problems of falling off, brittle fracture and the like of the sputtering target in operation, and also needs to have high thermal conductivity and electric conductivity.
CN 101518851A discloses a welding structure and method of a target and a back plate, the method comprising: providing a tantalum target material; forming an intermediate layer on the welding surface of the tantalum target material; and welding the copper or copper alloy backboard to the tantalum target by adopting a hot isostatic pressing method to perform welding operation on the intermediate layer. CN 102814585A discloses a method for welding a target and a back plate, which comprises the steps of firstly processing grooves on a cobalt target and the back plate, and then welding the cobalt target on a copper alloy back plate by using a low-temperature diffusion welding method by using a multi-layer composite material intermediate layer. CN 103343321A discloses a method for manufacturing a sputtering target, which mainly comprises: the back plate is provided with a groove which is a cylindrical groove or a stepped groove with the diameter gradually reduced towards the inner side, the target blank is provided with a bulge, the bulge is a cylindrical bulge or a stepped cylindrical bulge with the diameter gradually reduced towards the inner side, and the bulge of the target blank is pressed into the groove of the back plate by a hot pressing, cold pressing or brazing method to prepare the integral target material. According to the method, the target is welded on the back plate through the intermediate layer, the target assembly is easy to deform due to the welding structure, the yield is influenced, economic loss is caused, and the method is not beneficial to industrial application.
CN 110756937A discloses a brazing method of a target and a backing plate, which comprises the following steps: (1) processing a welding groove matched with the target on the welding surface of the backboard blank to obtain a preprocessed backboard; (2) preheating the preprocessed back plate obtained in the step (1), then laying brazing filler metal in a welding groove, heating to melt the brazing filler metal, and pressing the brazing filler metal into a target material; (3) pressing the surface of the target material in the step (2), and cooling to complete the combination of the target material and the back plate to obtain a semi-finished target material assembly; (4) and (4) processing the target semi-finished product assembly obtained in the step (3) to enable the size of the back plate to meet the process requirement. The method adopts a brazing method for welding, the improvement of the welding bonding strength of the welding bonding rate is limited, and the target assembly is easy to deform.
In summary, how to provide a simple method for welding a target and a backing plate, which can ensure the welding bonding rate and the welding bonding strength and solve the problem of easy deformation of the target assembly, is a problem to be solved at present.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a welding method of a target and a back plate, which effectively solves the problem of target deformation in the welding process through the design of a welding structure, ensures the welding bonding rate and the welding bonding strength, and has good industrial application prospect.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a welding method of a target and a back plate, which comprises the following steps:
(1) assembling the target material, the intermediate layer and the back plate to obtain an assembly component;
the target material is positioned between the two intermediate layers, the two back plates are symmetrically arranged on the outer sides of the two intermediate layers, and the target material and the two intermediate layers are wrapped;
(2) and (2) sequentially carrying out sheath welding, degassing and hot isostatic pressing on the assembly obtained in the step (1), and then stripping a back plate and an interlayer on one side of the target sputtering surface of the assembly to obtain the target assembly.
In the welding method, the intermediate medium is added between the interfaces in the diffusion welding process to realize the diffusion welding of the target material, so that the welding yield, the welding bonding rate and the welding bonding strength are ensured; meanwhile, a symmetrical welding structure is designed, so that the deformation problem of the target material can be effectively solved, and the rejection rate is reduced; the welding method has the advantages of simple process flow, high production efficiency and good industrial application prospect.
In the invention, the back plates are provided with grooves, the surfaces of the two back plates provided with the grooves are oppositely connected, and the size of a formed cavity is adapted to the sizes of the target material and the two intermediate layers.
The following technical solutions are preferred technical solutions of the present invention, but not limited to the technical solutions provided by the present invention, and technical objects and advantageous effects of the present invention can be better achieved and achieved by the following technical solutions.
As a preferable technical solution of the present invention, the material of the target in step (1) includes any one of aluminum, aluminum alloy, titanium alloy, and tantalum.
Preferably, the thickness of the target material in step (1) is 5 to 20mm, such as 5mm, 7mm, 10mm, 12mm, 15mm, 18mm or 20mm, but not limited to the recited values, and other values not recited in the range of the recited values are also applicable.
Preferably, the intermediate layer in step (1) comprises any one of aluminum, aluminum alloy, copper or copper alloy.
Preferably, the thickness of the intermediate layer in step (1) is 1 to 7mm, such as 1mm, 2mm, 3mm, 4mm, 5mm, 6mm or 7mm, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the back plate of step (1) comprises any one of aluminum, aluminum alloy, copper or copper alloy.
In the present invention, the selection of the target material, the intermediate layer and the back plate is determined according to the properties of the materials. Selecting an intermediate layer and a back plate of aluminum or aluminum alloy as the target material of aluminum, aluminum alloy or titanium alloy; the intermediate layer and the back plate of copper or copper alloy are selected for the titanium target and the tantalum target so as to ensure the welding bonding rate and the qualification rate and the performance of the targets in the sputtering process.
As a preferable technical scheme of the invention, before the assembly in the step (1), the target, the intermediate layer and the back plate are sequentially polished, cleaned and dried.
As a preferable technical scheme of the invention, the welding surfaces of the target and the back plate are polished.
Preferably, both surfaces of the intermediate layer in contact with the backing plate and the target are polished.
In the invention, the polishing operation can remove surface impurities and increase the surface roughness, thereby laying a foundation for good welding performance. As a preferable embodiment of the present invention, the cleaning is ultrasonic cleaning.
Preferably, the cleaning solution used for cleaning is isopropanol and/or ethanol.
Preferably, the washing time is 5 to 120min, such as 2min, 10min, 20min, 30min, 40min, 60min, 80min, 100min or 120min, but not limited to the recited values, and other values not recited in the range of values are also applicable.
In a preferred embodiment of the present invention, the drying is vacuum drying.
Preferably, the drying temperature is 40 to 200 ℃, for example 40 ℃, 60 ℃, 80 ℃, 100 ℃, 120 ℃, 140 ℃, 160 ℃, 180 ℃ or 200 ℃, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
Preferably, the drying time is 30 to 300min, such as 30min, 50min, 80min, 100min, 150min, 200min, 250min or 300min, but not limited to the recited values, and other values not recited in the range of values are also applicable.
In a preferred embodiment of the present invention, the temperature of the degassing in the step (1) is 100 to 600 ℃, for example, 100 ℃, 200 ℃, 300 ℃, 400 ℃, 500 ℃ or 600 ℃, but the degassing is not limited to the above-mentioned values, and other values not shown in the above-mentioned range of values are also applicable.
In the present invention, the temperature of the degassing is related to the selection of the target species. The aluminum and aluminum alloy target materials need to be degassed at 100-400 ℃, the titanium target materials need to be degassed at 100-500 ℃, the tantalum target materials need to be degassed at 100-600 ℃, and the titanium aluminum alloy target materials need to be degassed at 200-600 ℃.
Preferably, the degassing time in step (2) is 2-48 h, such as 2h, 6h, 8h, 12h, 16h, 20h, 24h, 28h, 32h, 36h, 40h, 44h or 48h, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
In the invention, the degassing operation can ensure that the interior of the sheath is in a vacuum state, thereby greatly reducing the influence of impurity gas on the target welding process and ensuring the welding performance.
In a preferred embodiment of the present invention, the hot isostatic pressing temperature in step (2) is 100 to 1000 ℃, for example, 100 ℃, 200 ℃, 300 ℃, 400 ℃, 500 ℃, 600 ℃, 700 ℃, 800 ℃ or 900 ℃, but the hot isostatic pressing temperature is not limited to the above-mentioned values, and other values not shown in the above-mentioned range of values are also applicable.
In the present invention, the temperature of hot isostatic pressing is related to the selection of the target species. The hot isostatic pressing of the aluminum and aluminum alloy targets is required to be carried out at 100-400 ℃, the hot isostatic pressing of the titanium target is required to be carried out at 200-700 ℃, the hot isostatic pressing of the tantalum target is required to be carried out at 500-1000 ℃, and the hot isostatic pressing of the titanium and aluminum alloy targets is required to be carried out at 200-600 ℃.
Preferably, the hot isostatic pressing in step (2) is performed at a pressure of 50 to 200MPa, such as 50MPa, 80MPa, 100MPa, 120MPa, 140MPa, 180MPa or 200MPa, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the hot isostatic pressing in step (2) is performed for 3 to 48 hours, such as 3 hours, 6 hours, 8 hours, 12 hours, 16 hours, 20 hours, 24 hours, 28 hours, 32 hours, 36 hours, 40 hours, 44 hours, or 48 hours, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
Preferably, the hot isostatic pressing of step (2) is followed by furnace cooling.
As a preferable technical scheme of the invention, the sheath is removed before the stripping in the step (2) is carried out.
Preferably, the removal of the capsule is performed by plasma cutting or turning.
Preferably, the step (2) sequentially peels off the back plate and the intermediate layer on the sputtering surface side of the target by turning.
Preferably, the rotation speed of the turning back plate is 300-500 r/min, such as 300r/min, 350r/min, 400r/min, 450r/min or 500r/min, but not limited to the recited values, and other values not recited in the range of the recited values are also applicable.
Preferably, the turning insert is rotated at a speed of 100 to 300r/min, such as 100r/min, 150r/min, 200r/min, 250r/min or 300r/min, but not limited to the values listed, and other values not listed in the range of values are equally applicable.
According to the invention, after welding is finished, the back plate and the middle layer on one side of the target sputtering surface of the assembly component are stripped by adopting a numerical control machine tool, so that the subsequent use of the target component is prevented from being influenced.
In the invention, the intermediate layer is directly contacted with the sputtering target, and the rotating speed of the turning intermediate layer is not more than that of the turning back plate, so that the sputtering target can be protected, the risk of product scrap is reduced, and the loss of the blade is reduced.
As a preferred embodiment of the present invention, the welding method includes the steps of:
(1) polishing the contact surface of the target and the back plate and the front and back surfaces of the middle layer, then carrying out ultrasonic cleaning by adopting a cleaning solution for 5-120 min, and then carrying out vacuum drying for 30-300 min at 40-200 ℃; assembling a dried target material with the thickness of 5-20 mm, an intermediate layer with the thickness of 1-7 mm and a back plate to obtain an assembly component, wherein the target material is positioned between the two intermediate layers, the two back plates are symmetrically arranged on the outer sides of the two intermediate layers, and the target material and the two intermediate layers are wrapped;
(2) and (2) performing sheath welding on the assembly obtained in the step (1), degassing for 2-48 h at 100-600 ℃, performing hot isostatic pressing for 3-48 h at 100-1000 ℃ and 50-200 MPa, cooling along with a furnace, removing the sheath by adopting a plasma cutting or turning mode, and peeling the back plate and the middle layer on one side of the target sputtering surface of the assembly by adopting a turning mode to obtain the target assembly, wherein the rotating speed of the turned back plate is 300-500 r/min, and the rotating speed of the turned middle layer is 100-300 r/min.
Compared with the prior art, the invention has the following beneficial effects:
(1) the welding method realizes the diffusion welding of the target material by adding the intermediate medium between the interfaces in the diffusion welding process, ensures the welding yield, the welding bonding rate and the welding bonding strength, and ensures that the welding bonding rate can reach more than 99.68 percent and the welding bonding strength can reach more than 59.36 MPa; meanwhile, the deformation problem of the target is effectively solved through the design of a symmetrical welding structure, the deformation amount is below 0.54mm, and the rejection rate is reduced;
(2) the welding method has the advantages of simple process flow, high production efficiency and good industrial application prospect.
Drawings
FIG. 1 is a schematic view of a welded structure provided in embodiment 1 of the present invention;
wherein, 1-target material, 2-intermediate layer and 3-backboard.
Detailed Description
In order to better illustrate the present invention and facilitate the understanding of the technical solutions of the present invention, the present invention is further described in detail below. However, the following examples are only simple examples of the present invention and do not represent or limit the scope of the present invention, which is defined by the claims.
The embodiment of the invention provides a welding method and a welding structure of a target and a back plate, wherein the welding method comprises the following steps:
(1) assembling the target material, the intermediate layer and the back plate to obtain an assembly component;
the target material is positioned between the two intermediate layers, the two back plates are symmetrically arranged on the outer sides of the two intermediate layers, and the target material and the intermediate layers are wrapped;
(2) and (2) sequentially carrying out sheath welding, degassing and hot isostatic pressing on the assembly obtained in the step (1), and then stripping a back plate and an interlayer on one side of the target sputtering surface of the assembly to obtain the target assembly.
The welding structure comprises a target 1, an intermediate layer 2 and a back plate 3;
the target material 1 is positioned between the two intermediate layers 2, and the two back plates 3 are symmetrically arranged on the outer sides of the two intermediate layers 2 and wrap the target material 1 and the intermediate layers 2.
The following are typical but non-limiting examples of the invention:
example 1:
the embodiment provides a welding structure of a target and a back plate, and the welding structure is shown in fig. 1.
The welding structure comprises a target 1, an intermediate layer 2 and a back plate 3;
the target material 1 is positioned between the two intermediate layers 2, and the two back plates 3 are symmetrically arranged on the outer sides of the two intermediate layers 2 and wrap the target material 1 and the intermediate layers 2.
Example 2:
the embodiment provides a welding method of a target material and a back plate, and the welding structure of the target material and the back plate refers to the welding structure in the embodiment 1.
The welding method comprises the following steps:
(1) polishing the welding surface of the titanium-aluminum alloy target and the aluminum back plate and the two surfaces of the aluminum alloy intermediate layer, which are in contact with the aluminum back plate and the titanium-aluminum alloy target, then performing ultrasonic cleaning by using isopropanol, and performing vacuum drying for 60min at 90 ℃ after cleaning for 5 min; assembling the dried titanium-aluminum alloy target material with the thickness of 5mm, the aluminum alloy intermediate layer with the thickness of 1mm and the aluminum back plate to obtain an assembly component;
(2) and (2) performing sheath welding on the assembly obtained in the step (1), degassing for 2h at 100 ℃, performing hot isostatic pressing for 3h at 200 ℃ and 50MPa, cooling along with a furnace, removing the sheath in a plasma cutting mode, and peeling the aluminum back plate and the aluminum alloy intermediate layer on one side of the target sputtering surface of the assembly in a turning mode to obtain the target assembly, wherein the rotating speed of the turning back plate is 300r/min, and the rotating speed of the turning intermediate layer is 100 r/min.
Example 3:
the embodiment provides a welding method of a target material and a back plate, and the welding structure of the target material and the back plate refers to the welding structure in the embodiment 1.
The welding method comprises the following steps:
(1) polishing the contact surface of the titanium-aluminum alloy target and the aluminum alloy back plate and the two surfaces of the aluminum alloy intermediate layer, which are in contact with the aluminum alloy back plate and the titanium-aluminum alloy target, then performing ultrasonic cleaning by using isopropanol, and performing vacuum drying for 40min at 120 ℃ after cleaning for 120 min; assembling the dried titanium-aluminum alloy target material with the thickness of 20mm, the aluminum alloy intermediate layer with the thickness of 7mm and the aluminum alloy back plate to obtain an assembly component;
(2) and (2) performing sheath welding on the assembly obtained in the step (1), degassing for 20h at 400 ℃, performing hot isostatic pressing for 15h at 600 ℃ and 100MPa, cooling along with a furnace, removing the sheath in a turning mode, and peeling the aluminum alloy back plate and the aluminum alloy intermediate layer on one side of the target sputtering surface of the assembly in a turning mode to obtain the target assembly, wherein the rotating speed of the turning back plate is 400r/min, and the rotating speed of the turning intermediate layer is 300 r/min.
Example 4:
the embodiment provides a welding method of a target material and a back plate, and the welding structure of the target material and the back plate refers to the welding structure in the embodiment 1.
The welding method comprises the following steps:
(1) polishing the contact surface of the titanium target and the copper alloy back plate and the two surfaces of the copper intermediate layer, which are in contact with the copper alloy back plate and the titanium target, then performing ultrasonic cleaning by using ethanol, and performing vacuum drying for 30min at 200 ℃ after cleaning for 60 min; assembling the dried titanium target material with the thickness of 15mm, the copper intermediate layer with the thickness of 4mm and the copper alloy back plate to obtain an assembly component;
(2) and (2) performing sheath welding on the assembly obtained in the step (1), degassing for 35h at 500 ℃, performing hot isostatic pressing for 40h at 700 ℃ and 70MPa, cooling along with a furnace, removing the sheath in a turning mode, and peeling the copper alloy backboard and the copper intermediate layer on one side of the target sputtering surface of the assembly in a turning mode to obtain the target assembly, wherein the rotating speed of the turning backboard is 500r/min, and the rotating speed of the turning intermediate layer is 200 r/min.
Example 5:
the embodiment provides a welding method of a target material and a back plate, and the welding structure of the target material and the back plate refers to the welding structure in the embodiment 1.
The welding method comprises the following steps:
(1) polishing the contact surface of the tantalum target material and the copper alloy back plate and the two surfaces of the copper alloy intermediate layer, which are in contact with the copper alloy back plate and the tantalum target material, then performing ultrasonic cleaning by using ethanol, and performing vacuum drying for 300min at 40 ℃ after cleaning for 30 min; assembling the dried tantalum target material with the thickness of 10mm, the copper alloy intermediate layer with the thickness of 5mm and the copper alloy back plate to obtain an assembly component;
(2) and (2) performing sheath welding on the assembly obtained in the step (1), degassing for 48h at 300 ℃, performing hot isostatic pressing for 25h at 1000 ℃ and 200MPa, cooling along with a furnace, removing the sheath in a plasma cutting mode, and peeling the copper alloy back plate and the copper alloy intermediate layer on one side of the target sputtering surface of the assembly in a turning mode to obtain the target assembly, wherein the rotating speed of the turning back plate is 400r/min, and the rotating speed of the turning intermediate layer is 250 r/min.
Comparative example 1:
this comparative example provides a method of welding a target and a backing plate, which method is referenced to the welding method of example 2, except that: the symmetrical welding structure is not adopted in the step (1), and the aluminum alloy intermediate layer and the aluminum back plate on one side of the sputtering surface of the target in the assembly component are removed; and the peeling operation is not performed in step (2).
Comparative example 2:
the present comparative example provides a welding method of a target material and a backing plate, the welding structure of the target material and the backing plate is referred to the welding structure in example 1, and the welding method is referred to the welding method in example 2, except that: and (3) in the step (2), no stripping operation is performed after furnace cooling.
In the comparative example, the aluminum back plate and the aluminum alloy interlayer on one side of the sputtering surface of the target of the assembly are not peeled off, so that the obtained target assembly cannot be used.
The target assemblies obtained in examples 2 to 5 and comparative example 1 were measured for the weld bonding rate, weld bonding strength, and deformation amount, and the measurement results are shown in table 1.
Table 1 weld bonding rate and weld bonding strength of target assemblies obtained in examples 2 to 5 and comparative example 1
| Weld bonding rate/%) | Weld bond strength/MPa | Deformation/mm | |
| Example 2 | 99.82 | 60.20 | 0.33 |
| Example 3 | 99.68 | 58.97 | 0.41 |
| Example 4 | 99.75 | 59.36 | 0.54 |
| Example 5 | 99.83 | 60.57 | 0.38 |
| Comparative example 1 | 80.51 | 23.62 | 10.25 |
The target assemblies prepared in the embodiments 2 to 5 have the welding bonding rates of 99.68% or more, the welding bonding strengths of 59.36MPa or more, and the deformation amounts of 0.54mm or less by the design of the symmetrical welding structure; in contrast, in the target assembly obtained in comparative example 1, the target is welded to the back plate only through one intermediate layer, and the deformation of the target assembly is large, so that the welding bonding rate and the welding bonding strength are poor.
It can be seen from the above examples and comparative examples that the welding method of the present invention realizes the diffusion welding of the target material by adding the intermediate medium between the interfaces in the process of diffusion welding, thereby ensuring the welding yield, the welding bonding rate and the welding bonding strength, wherein the welding bonding rate can reach more than 99.68%, and the welding bonding strength can reach more than 59.36 MPa; meanwhile, the deformation problem of the target is effectively solved through the design of a symmetrical welding structure, the deformation amount is below 0.54mm, and the rejection rate is reduced; the welding method has the advantages of simple process flow, high production efficiency and good industrial application prospect.
The applicant states that the present invention is illustrated in detail by the above examples, but the present invention is not limited to the above detailed methods, i.e. it is not meant that the present invention must rely on the above detailed methods for its implementation. It will be apparent to those skilled in the art that any modifications to the present invention, equivalents thereof, additions of additional operations, selection of specific ways, etc., are within the scope and disclosure of the present invention.
Claims (10)
1. A welding method of a target and a back plate is characterized by comprising the following steps:
(1) assembling the target material, the intermediate layer and the back plate to obtain an assembly component;
the target material is positioned between the two intermediate layers, the two back plates are symmetrically arranged on the outer sides of the two intermediate layers, and the target material and the two intermediate layers are wrapped;
(2) and (2) sequentially carrying out sheath welding, degassing and hot isostatic pressing on the assembly obtained in the step (1), and then stripping a back plate and an interlayer on one side of the target sputtering surface of the assembly to obtain the target assembly.
2. The welding method according to claim 1, wherein the material of the target material in the step (1) comprises any one of aluminum, aluminum alloy, titanium alloy or tantalum;
preferably, the thickness of the target in the step (1) is 5-20 mm;
preferably, the intermediate layer of step (1) comprises any one of aluminum, aluminum alloy, copper or copper alloy;
preferably, the thickness of the middle layer in the step (1) is 1-7 mm;
preferably, the back plate of step (1) comprises any one of aluminum, aluminum alloy, copper or copper alloy.
3. The welding method according to claim 1 or 2, wherein the target material, the intermediate layer and the backing plate are sequentially polished, cleaned and dried before the assembling in step (1).
4. The welding method according to claim 3, wherein the welding surfaces of the target and the backing plate are polished;
preferably, both surfaces of the intermediate layer in contact with the backing plate and the target are polished.
5. Welding method according to claim 3 or 4, characterized in that the cleaning is an ultrasonic cleaning;
preferably, the cleaning solution adopted for cleaning is isopropanol and/or ethanol;
preferably, the cleaning time is 5-120 min.
6. The welding method according to any one of claims 3 to 5, wherein the drying is vacuum drying;
preferably, the drying temperature is 40-200 ℃;
preferably, the drying time is 30-300 min.
7. The welding method according to any one of claims 1 to 6, wherein the degassing in step (1) is performed at a temperature of 100 to 600 ℃;
preferably, the degassing time in the step (2) is 2-48 h.
8. The welding method according to any one of claims 1 to 7, wherein the hot isostatic pressing in step (2) is performed at a temperature of 100 to 1000 ℃;
preferably, the hot isostatic pressing pressure in the step (2) is 50-200 MPa;
preferably, the hot isostatic pressing time in the step (2) is 3-48 h;
preferably, the hot isostatic pressing of step (2) is followed by furnace cooling.
9. The welding method according to any one of claims 1 to 8, wherein the sheath is removed before the peeling in step (2);
preferably, the removing of the sheath is performed by plasma cutting or turning;
preferably, the step (2) sequentially strips the back plate and the middle layer on one side of the sputtering surface of the target in a turning mode;
preferably, the rotating speed of the turning back plate is 300-500 r/min;
preferably, the rotating speed of the turning intermediate layer is 100-300 r/min.
10. Welding method according to any one of claims 1-9, characterized in that it comprises the following steps:
(1) polishing the welding surface of the target material and the back plate and two surfaces of the intermediate layer, which are in contact with the back plate and the target material, then carrying out ultrasonic cleaning by adopting a cleaning solution for 5-120 min, and then carrying out vacuum drying for 30-300 min at the temperature of 40-200 ℃; assembling a dried target material with the thickness of 5-20 mm, an intermediate layer with the thickness of 1-7 mm and a back plate to obtain an assembly component, wherein the target material is positioned between the two intermediate layers, the two back plates are symmetrically arranged on the outer sides of the two intermediate layers, and the target material and the two intermediate layers are wrapped;
(2) and (2) performing sheath welding on the assembly obtained in the step (1), degassing for 2-48 h at 100-600 ℃, performing hot isostatic pressing for 3-48 h at 100-1000 ℃ and 50-200 MPa, cooling along with a furnace, removing the sheath by adopting a plasma cutting or turning mode, and peeling the back plate and the middle layer on one side of the target sputtering surface of the assembly by adopting a turning mode to obtain the target assembly, wherein the rotating speed of the turned back plate is 300-500 r/min, and the rotating speed of the turned middle layer is 100-300 r/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011593875.9A CN112743216A (en) | 2020-12-29 | 2020-12-29 | Welding method for target and back plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011593875.9A CN112743216A (en) | 2020-12-29 | 2020-12-29 | Welding method for target and back plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112743216A true CN112743216A (en) | 2021-05-04 |
Family
ID=75647705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011593875.9A Pending CN112743216A (en) | 2020-12-29 | 2020-12-29 | Welding method for target and back plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112743216A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113210832A (en) * | 2021-06-02 | 2021-08-06 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for aluminum-scandium alloy target |
| CN113500045A (en) * | 2021-07-12 | 2021-10-15 | 宁波江丰电子材料股份有限公司 | Method for cleaning intermediate layer of target assembly |
| CN113695732A (en) * | 2021-09-10 | 2021-11-26 | 宁波江丰电子材料股份有限公司 | Welding method of aluminum target material assembly |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060065517A1 (en) * | 2002-06-14 | 2006-03-30 | Tosoh Smd, Inc. | Target and method of diffusion bonding target to backing plate |
| CN103492608A (en) * | 2011-02-14 | 2014-01-01 | 东曹Smd有限公司 | Diffusion-bonded sputtering target assembly and method of manufacturing |
| CN109154073A (en) * | 2016-04-01 | 2019-01-04 | 霍尼韦尔国际公司 | Sputter target assemblies and manufacturing method with grading interlayer |
| CN111136396A (en) * | 2020-01-16 | 2020-05-12 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for copper target and back plate |
| CN112091401A (en) * | 2020-09-11 | 2020-12-18 | 宁波江丰电子材料股份有限公司 | Titanium-aluminum alloy target material and welding method thereof |
| CN112122764A (en) * | 2020-09-16 | 2020-12-25 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for tungsten target and copper-zinc alloy back plate |
-
2020
- 2020-12-29 CN CN202011593875.9A patent/CN112743216A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060065517A1 (en) * | 2002-06-14 | 2006-03-30 | Tosoh Smd, Inc. | Target and method of diffusion bonding target to backing plate |
| CN103492608A (en) * | 2011-02-14 | 2014-01-01 | 东曹Smd有限公司 | Diffusion-bonded sputtering target assembly and method of manufacturing |
| CN109154073A (en) * | 2016-04-01 | 2019-01-04 | 霍尼韦尔国际公司 | Sputter target assemblies and manufacturing method with grading interlayer |
| CN111136396A (en) * | 2020-01-16 | 2020-05-12 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for copper target and back plate |
| CN112091401A (en) * | 2020-09-11 | 2020-12-18 | 宁波江丰电子材料股份有限公司 | Titanium-aluminum alloy target material and welding method thereof |
| CN112122764A (en) * | 2020-09-16 | 2020-12-25 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for tungsten target and copper-zinc alloy back plate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113210832A (en) * | 2021-06-02 | 2021-08-06 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for aluminum-scandium alloy target |
| CN113500045A (en) * | 2021-07-12 | 2021-10-15 | 宁波江丰电子材料股份有限公司 | Method for cleaning intermediate layer of target assembly |
| CN113695732A (en) * | 2021-09-10 | 2021-11-26 | 宁波江丰电子材料股份有限公司 | Welding method of aluminum target material assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112743216A (en) | Welding method for target and back plate | |
| CN111136396B (en) | Diffusion welding method for copper target and back plate | |
| CN111304604A (en) | Diffusion welding method for copper target and aluminum alloy back plate and prepared copper target assembly | |
| CN110421246B (en) | Diffusion welding method for back plate and high-purity metal target | |
| CN110711774B (en) | Pulse current assisted titanium-TiAl composite plate non-sheath rolling method | |
| CN101579782B (en) | Welding method of copper target blank and copper alloy backing plate | |
| CN112453623A (en) | Welding and shaping integrated method for circular titanium target and back plate | |
| CN111014930B (en) | Two-step hot isostatic pressing diffusion welding method for tungsten target assembly | |
| CN101537533A (en) | Welding structure and method of target and backing plate | |
| CN102500909A (en) | Welding method of target and back plate | |
| CN101648316A (en) | Welding structure and welding method of target materials and back plates | |
| CN112122764A (en) | Diffusion welding method for tungsten target and copper-zinc alloy back plate | |
| CN101745734B (en) | Method for rapidly welding large-area target with back plate | |
| CN112935512A (en) | Diffusion welding method for cobalt target and copper-chromium alloy back plate | |
| CN112676782B (en) | Method for assembling titanium target and copper back plate | |
| CN113458528A (en) | Target material assembly and welding method and application thereof | |
| CN113305412A (en) | Diffusion welding method for tungsten target and copper back plate | |
| CN113385893A (en) | Preparation method of niobium-copper composite part | |
| CN112743217A (en) | Welding structure and welding method of titanium-aluminum alloy target assembly | |
| CN103264219B (en) | The preparation method of a kind of tungsten, oxygen-free copper composite material | |
| CN101648307A (en) | Manufacturing method of target material assembly | |
| CN110396674A (en) | A kind of heat wire method cvd diamond transition zone sputtering equipment and its application method | |
| CN113500280A (en) | Diffusion welding method for dissimilar metals | |
| CN112975102A (en) | Diffusion welding method for cobalt target and copper back plate | |
| CN112975295A (en) | Preparation method of niobium target material assembly for semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |