CN111304604A - Diffusion welding method for copper target and aluminum alloy back plate and prepared copper target assembly - Google Patents
Diffusion welding method for copper target and aluminum alloy back plate and prepared copper target assembly Download PDFInfo
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- CN111304604A CN111304604A CN202010139403.XA CN202010139403A CN111304604A CN 111304604 A CN111304604 A CN 111304604A CN 202010139403 A CN202010139403 A CN 202010139403A CN 111304604 A CN111304604 A CN 111304604A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
- B23K20/026—Thermo-compression bonding with diffusion of soldering material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention relates to a diffusion welding method of a copper target and an aluminum alloy back plate and a prepared copper target assembly, wherein the diffusion welding method comprises the following steps: (1) plating a titanium film on the welding surface of the copper target, assembling the copper target plated with the titanium film and the aluminum alloy back plate, and then integrally placing the copper target plated with the titanium film and the aluminum alloy back plate into a jacket; (2) sealing the sheath obtained in the step (1) and then degassing; (3) and (3) carrying out hot isostatic pressing welding on the sheath degassed in the step (2), and then removing the sheath to finish diffusion welding of the copper target and the aluminum alloy backboard. The diffusion welding method is beneficial to improving the welding combination degree between the copper target and the aluminum alloy back plate through the good diffusivity of the titanium film; in addition, the titanium film is plated on the welding surface of the copper target, so that the uniformity of the titanium film can be improved, the welding combination degree can be enhanced, the operation can be simplified, and the raw material cost can be saved. The welding combination degree of the copper target assembly prepared by the method is more than 99%.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for welding a target assembly, and particularly relates to a method for diffusion welding of a copper target and an aluminum alloy back plate and a prepared copper target assembly.
Background
The metal sputtering target material is used as a cathode material in the sputtering deposition technology, and metal on the surface of the metal sputtering target material is separated from the cathode in the form of molecules, atoms or ions and is redeposited on the surface of an anode under the impact action of positive charged cations in a sputtering machine. As the metal sputtering target material is usually made of high-purity aluminum, copper, titanium, nickel, tantalum and other relatively noble metal materials. Because the metal sputtering targets have different strengths, in the practical application process, the metal sputtering targets meeting the performance requirements and the back plate with certain strength need to be combined to form a target assembly, and then the target assembly is arranged on a sputtering machine table to effectively perform sputtering control under the action of a magnetic field and an electric field. The back plate can not only play a supporting role and a cooling role for the metal sputtering target material, but also reduce the raw material cost of the production process. Commonly used materials for the back plate include aluminum alloy, copper alloy and the like.
At present, the metal sputtering target and the back plate need to be processed and welded for forming, so that the successful implementation of the subsequent sputtering can be ensured. If the welding combination degree between the metal sputtering target and the back plate is poor, the metal sputtering target deforms, cracks and even falls off from the back plate under the heated condition, so that the uniform sputtering effect cannot be achieved, and the sputtering base station can be damaged.
The copper target material needs to be welded with an alloy back plate with high hardness because of low hardness. The welding methods commonly used at present are mainly brazing and diffusion welding. For the copper target material component manufactured by the brazing process, because the melting point of the brazing filler metal is lower and the high-temperature resistance is poorer, when the temperature of a machine table used by the copper target material component is higher, the phenomenon of melting of the brazing filler metal is easy to occur, and the risk of product desoldering is easy to increase. Diffusion welding refers to the fact that surfaces of materials which are in contact with each other are close to each other under the action of temperature and pressure, local plastic deformation occurs, mutual diffusion occurs among atoms, and a new diffusion layer is formed at an interface, so that reliable connection is achieved. However, if the temperature of diffusion bonding is high, the copper target material is prone to have abnormal grain growth, which results in coarse grains, and may adversely affect the line width and uniformity of the formed interconnection structure and conductive lines, and further affect the performance of the formed semiconductor chip.
Hot Isostatic Pressing (HIP) is a method for preparing a high-density blank or part by applying isotropic static pressure to powder in a Hot Isostatic pressing machine or a sintered blank or dissimilar metal to be compacted in a high-temperature high-pressure sealed container by using high-pressure inert gas as a medium. The hot isostatic pressing technology becomes a key technology in the fields of advanced forming technology and advanced material development, such as high-temperature powder metallurgy, casting defect elimination, dissimilar metal diffusion connection, novel engineering ceramics, composite materials, refractory materials, high-strength graphite carbon and the like. In the prior art, diffusion welding and HIP are combined, and HIP diffusion welding technology is developed.
CN101579782A discloses a method for welding a copper target blank and a copper alloy backing plate, which comprises providing a copper target blank and a copper alloy backing plate, placing the copper target blank and the copper alloy backing plate into a vacuum sheath, feeding the copper target blank and the copper alloy backing plate into a welding device, performing diffusion welding by using a hot isostatic pressing process, welding the copper target blank to the copper alloy backing plate to form a target assembly, performing air cooling after the welding is completed, removing the vacuum sheath, and taking out the target assembly. The welding method adopts HIP diffusion welding technology, and the smoothness of the target and the surface of the back plate reaches 0.2-3.2 microns through machining, so that a formed welding layer is thin, and the welding effect is poor.
CN101648303A discloses a method for welding a target and a backing plate, comprising: providing a copper target material and a back plate; forming a metal intermediate layer on the welding surface of the copper target material; adding brazing filler metal on the welding surface of the back plate; brazing, heating and melting the brazing filler metal to weld the copper target to the back plate to form a target assembly; then carrying out heat preservation thermal diffusion treatment; and cooling the target assembly, and machining to remove the redundant brazing filler metal. Although the welding method improves the problem that a welding workpiece and brazing filler metal are difficult to infiltrate through the metal intermediate layer, the brazing method still has the problems of low welding combination degree and poor high temperature resistance.
CN108213855A discloses a copper target assembly and a manufacturing method thereof, including providing a back plate and a copper target, where the back plate includes a first welding surface and the copper target includes a second welding surface; forming a pattern consisting of a plurality of protrusions on the first welding surface; arranging the second welding surface opposite to the first welding surface with the patterns and attaching the second welding surface and the first welding surface to form an initial assembly; and carrying out welding treatment on the initial assembly to enable the bulge in the first welding surface to be embedded into the second welding surface, so as to form a welding layer between the copper target and the back plate, wherein the thickness of the welding layer is greater than or equal to the height of the bulge, so that the copper target assembly is obtained. Although the welding method increases the contact area of the welding surface by turning the threads on the back plate and thickens the welding layer, the quality requirement corresponding to the welding combination degree of the copper target and the aluminum alloy back plate still cannot be met.
CN110539067A discloses a diffusion welding method of a high-purity copper target, which comprises the steps of preparing the high-purity copper target and a back plate, and processing threads on the welding surface of the back plate; uniformly arranging metal powder on the thread surface of the back plate; combining a high-purity copper target material and a back plate, then placing the combined high-purity copper target material and the back plate into a metal sheath, then carrying out degassing treatment on the metal sheath, and then sealing the metal sheath subjected to degassing treatment; hot isostatic pressing the sealed metal sheath, and then cooling to room temperature; and removing the metal sheath to finish the diffusion welding of the high-purity copper target and the back plate. Although the welding method fills the holes caused by thread extrusion deformation by uniformly arranging metal powder, the quality requirement corresponding to the welding combination degree of the copper target and the aluminum alloy back plate still cannot be met.
In view of the above, there is a need to develop an effective diffusion welding method for copper target and aluminum alloy backing plate.
Disclosure of Invention
In view of the problems in the prior art, the invention provides a diffusion welding method of a copper target and an aluminum alloy back plate and a prepared copper target assembly, wherein the diffusion welding method comprises the following steps: plating a titanium film on the welding surface of the copper target, assembling the copper target plated with the titanium film and the aluminum alloy backboard, putting into a sheath, sealing, degassing, hot isostatic pressing welding, and then removing the sheath to finish the diffusion welding of the copper target and the aluminum alloy backboard. The diffusion welding method is beneficial to improving the welding combination degree between the copper target and the aluminum alloy back plate through the good diffusivity of the titanium film; in addition, the titanium film is plated on the welding surface of the copper target, so that the uniformity of the titanium film can be improved, the welding combination degree can be enhanced, the operation can be simplified, and the raw material cost can be saved.
In order to achieve the purpose, the invention adopts the following technical scheme:
one of the purposes of the invention is to provide a diffusion welding method for a copper target and an aluminum alloy back plate, which comprises the following steps:
(1) plating a titanium film on the welding surface of the copper target, assembling the copper target plated with the titanium film and the aluminum alloy back plate, and then integrally placing the copper target plated with the titanium film and the aluminum alloy back plate into a jacket;
(2) sealing the sheath obtained in the step (1) and then degassing;
(3) and (3) carrying out hot isostatic pressing welding on the sheath degassed in the step (2), and then removing the sheath to finish diffusion welding of the copper target and the aluminum alloy backboard.
According to the diffusion welding method, the welding combination degree between the copper target and the aluminum alloy back plate is enhanced through the good diffusivity of the titanium film and the diffusion effect of titanium to the aluminum alloy back plate; in addition, the titanium film is plated on the relatively smooth welding surface of the copper target, so that the uniformity of the titanium film can be improved, the uniformity of the subsequent diffusion effect of the titanium film is ensured, the welding combination degree between the copper target and the aluminum alloy backboard is improved, the operation is simplified, and the raw material cost can be saved. The welding combination degree of the copper target material and the aluminum alloy back plate is more than 99% by the detection of an ultrasonic C scanning imaging flaw detector.
As a preferable embodiment of the present invention, the thickness of the titanium film in the step (1) is 3 to 6 μm, for example, 3 μm, 3.5 μm, 4.5 μm, 5 μm, 5.5 μm or 6 μm, but the thickness is not limited to the above-mentioned values, and other values not shown in the above-mentioned value range are also applicable.
Preferably, the titanium film coating method in the step (1) is physical vapor deposition, and preferably vacuum magnetron sputtering.
Preferably, the current of the vacuum magnetron sputtering is 15-25A, such as 15A, 16A, 17A, 18A, 19A, 20A, 21A, 22A, 23A, 24A or 25A, etc., the bias voltage is 80-130V, such as 80V, 90V, 100V, 110V, 120V or 130V, etc., the temperature is 100-150 deg.C, such as 100 deg.C, 110 deg.C, 120 deg.C, 130 deg.C, 140 deg.C or 150 deg.C, etc., and the time is 2-4h, such as 2h, 2.1h, 2.3h, 2.5h, 2.8h, 3h, 3.2h, 3.4h, 3.5h, 3.7h, 3.9h or 4h, etc., but the above numerical range is not limited to the recited numerical values, and other numerical values in the range are also applicable.
As a preferable technical scheme of the invention, before the titanium coating in the step (1), the welding surface of the copper target is processed, and then cleaning and drying treatment are carried out.
Preferably, the copper target welding surface is subjected to smoothing treatment.
Preferably, the smoothing is turning with a diamond insert.
Preferably, the cleaning treatment is ultrasonic cleaning by using an isopropanol cleaning solution.
Preferably, the ultrasonic cleaning time is 5-20min, such as 5min, 8min, 10min, 12min, 14min, 15min, 16min, 18min or 20min, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the drying process is a vacuum drying process.
Preferably, the vacuum degree of the vacuum drying treatment is less than 0.01Pa, and the vacuum drying treatment can be reasonably selected by a person skilled in the art according to the process requirements.
Preferably, the drying time of the vacuum drying treatment is 40-100min, such as 40min, 50min, 60min, 70min, 80min, 90min or 100min, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
Preferably, the copper target after a plurality of drying treatments is not assembled within 3 hours, and is vacuum-packed by filling argon while the copper target is hot.
The cleaning and drying treatment after the processing of the welding surface of the copper target material adopts isopropanol ultrasonic cleaning and vacuum drying, so that the copper rust, dust, particles, water stain and the like on the copper target material can be effectively removed, the possibility of reoxidation of the copper target material is effectively avoided, and the quality and the performance of the copper target material are improved; in addition, the cleaning and drying treatment can ensure the uniformity of the titanium film on the welding surface of the subsequent copper target.
As a preferable technical scheme of the invention, before the assembling treatment in the step (1), the copper target material plated with the titanium film is cleaned and dried.
Preferably, the cleaning treatment is ultrasonic cleaning by using an isopropanol cleaning solution.
Preferably, the ultrasonic cleaning time is 5-20min, such as 5min, 8min, 10min, 12min, 14min, 15min, 16min, 18min or 20min, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the drying process is a vacuum drying process.
Preferably, the vacuum degree of the vacuum drying treatment is less than 0.01Pa, and the vacuum drying treatment can be reasonably selected by a person skilled in the art according to the process requirements.
Preferably, the drying time of the vacuum drying treatment is 40-100min, such as 40min, 50min, 60min, 70min, 80min, 90min or 100min, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
Preferably, the copper target after a plurality of drying treatments is not assembled within 3 hours, and is vacuum-packed by filling argon while the copper target is hot.
The cleaning and drying treatment before the copper target assembly treatment adopts isopropanol ultrasonic cleaning and vacuum drying, can effectively remove stains caused by vacuum magnetron sputtering coating, effectively avoids the possibility that the copper target is oxidized again, and is beneficial to improving the quality and performance of the copper target.
As a preferable technical scheme of the invention, the aluminum alloy backboard in the step (1) is provided with a groove, and the bottom surface of the groove is a welding surface of the aluminum alloy backboard.
Preferably, the groove is subjected to an assembly dimensional tolerance test. When the copper target is cylindrical, the roundness of the groove of the back plate needs to be detected, so that the subsequent assembly treatment is ensured to be smoothly carried out.
Preferably, the welding surface of the aluminum alloy backboard is processed.
Preferably, the welding surface of the aluminum alloy back plate is subjected to thread turning.
Preferably, the thread treatment forms a thread protrusion.
Preferably, the distance between adjacent thread protrusions is 0.3-0.6mm, such as 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm or 0.6mm, but not limited to the recited values, and other values not recited in this range are equally applicable.
Preferably, the height of the thread protrusions is 0.05-0.25mm, such as 0.05mm, 0.1mm, 0.15mm, 0.2mm or 0.25mm, but not limited to the recited values, and other values not recited within the range of values are equally applicable.
Preferably, in a cross section perpendicular to the extension direction of the thread, the dimension of the thread protrusion is gradually reduced in a direction away from the back plate.
According to the invention, the aluminum alloy backboard welding surface is subjected to thread turning treatment, so that threads can be embedded into the copper target material in the subsequent diffusion welding process, the contact area between the welding surfaces is enlarged, and meanwhile, the welding seam of the welding layer can be effectively avoided, thereby enhancing the welding combination degree between the copper target material and the aluminum alloy backboard.
As a preferable technical scheme of the invention, before the assembling treatment in the step (1), the aluminum alloy back plate is subjected to acid washing, water washing and drying treatment.
Preferably, the acid solution used for the acid washing is prepared from hydrofluoric acid, nitric acid and water in a volume ratio of 1:3:2-6, such as 1:3:2, 1:3:2.5, 1:3:3, 1:3:3.5, 1:3:4, 1:3:4.5, 1:3:5, 1:3:5.5 or 1:3:6, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the time for the acid washing is 2-8min, such as 2min, 3min, 4min, 5min, 6min, 7min or 8min, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the drying treatment is air gun blow drying.
Preferably, a plurality of aluminum alloy back plates after drying treatment are not assembled within 3 days, and the back metallization line needs to be subjected to acid washing, water washing and drying treatment again.
According to the invention, the aluminum alloy back plate is subjected to acid washing, water washing and drying treatment, so that an oxide layer, dust, particles, water stain and the like on the surface of the aluminum alloy back plate can be effectively removed, and the welding combination degree of the copper target material and the aluminum alloy back plate before is enhanced.
As a preferred technical scheme of the invention, the sheath sealing in the step (2) is welded by argon arc welding.
Preferably, the helium leakage check is performed after the capsule sealing in the step (2).
Preferably, the degassing treatment in step (2) is carried out at a temperature of 200-.
Preferably, the vacuum degree of the degassing treatment in step (2) is less than 0.001Pa, and can be reasonably selected by the skilled person according to the process requirements.
Preferably, the degassing treatment in step (2) is carried out for 2-5h, such as 2h, 2.5h, 3h, 3.5h, 4h, 4.5h or 5h, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
In a preferred embodiment of the present invention, the hot isostatic pressing welding in step (3) is performed in a hot isostatic pressing machine.
Preferably, the temperature of the hot isostatic pressing welding in step (3) is 400-.
Preferably, the pressure of the hot isostatic pressing welding in the step (3) is more than or equal to 105MPa, and the pressure can be reasonably selected by a person skilled in the art according to the process requirement.
Preferably, the hot isostatic pressing welding in step (3) is performed for 3-8h, such as 3h, 4h, 5h, 6h, 7h or 8h, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the copper target material assembly obtained by diffusion welding in the step (3) is subjected to machining, size detection, cleaning, drying, packaging and shipment in sequence.
As a preferable technical solution of the present invention, the diffusion welding method includes the steps of:
(1) sequentially carrying out turning smoothing, cleaning and drying treatment on a copper target welding surface, plating a titanium film with the thickness of 3-6 mu m on the copper target welding surface by adopting a vacuum magnetron sputtering method, assembling the copper target plated with the titanium film and an aluminum alloy back plate, and then integrally placing the copper target and the aluminum alloy back plate into a jacket;
the aluminum alloy backboard is provided with a groove, the bottom surface of the groove is an aluminum alloy backboard welding surface, and the aluminum alloy backboard welding surface is subjected to thread turning treatment;
before the assembling treatment, cleaning and drying the copper target material plated with the titanium film, and carrying out acid washing, water washing and drying treatment on the aluminum alloy backboard;
(2) performing degassing treatment on the sheath obtained in the step (1) after welding and sealing the sheath by argon arc welding;
wherein the degassing treatment temperature is 200-400 ℃, the vacuum degree is less than 0.001Pa, and the time is 2-5 h;
(3) placing the sheath degassed in the step (2) into a hot isostatic pressing machine for hot isostatic pressing welding, and then removing the sheath to finish diffusion welding of the copper target and the aluminum alloy backboard;
wherein the temperature of the hot isostatic pressing welding is 400-500 ℃, the pressure is more than or equal to 105MPa, and the time is 3-8 h;
and (4) sequentially carrying out machining, size detection, cleaning, drying, packaging and delivery on the copper target assembly obtained by diffusion welding.
Another object of the present invention is to provide a copper target assembly prepared by the diffusion welding method of the first object, the copper target assembly comprising: the copper target, the aluminum alloy back plate and the welding layer containing metal titanium between the copper target and the aluminum alloy back plate.
Compared with the prior art, the invention at least has the following beneficial effects:
(1) the diffusion welding method is beneficial to improving the welding combination degree between the copper target and the aluminum alloy backboard through the good diffusivity of the titanium film and the diffusion effect of titanium to the aluminum alloy backboard;
(2) the diffusion welding method of the invention plates a layer of titanium film on the welding surface of the copper target, which can improve the uniformity of the titanium film, is beneficial to enhancing the welding combination degree, not only can simplify the operation, but also can save the cost of raw materials;
(3) the welding combination degree of the copper target material and the aluminum alloy back plate is more than 99 percent by the detection of an ultrasonic C scanning imaging flaw detector.
Drawings
Fig. 1 is a schematic structural view before an assembling process by the diffusion welding method according to embodiment 1 of the present invention.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The embodiment provides a diffusion welding method of a copper target and an aluminum alloy back plate, which comprises the following steps:
(1) preparing a cylindrical copper target with the purity of 6N and the diameter of 300mm, turning and smoothing the welding surface of the copper target by using a diamond blade, cleaning and drying, wherein isopropanol cleaning liquid is used for ultrasonic cleaning for 10min, and then vacuum drying is carried out for 60min under the condition that the vacuum degree is less than 0.01 Pa; plating a titanium film with the thickness of 5 mu m on the welding surface of the copper target by adopting a vacuum magnetron sputtering method, carrying out cleaning and drying treatment at the current of 20A, the bias voltage of 100V, the temperature of 120 ℃ and the time of 3h, wherein isopropanol cleaning liquid is adopted for ultrasonic cleaning for 10min, and then carrying out vacuum drying for 40min under the condition that the vacuum degree is less than 0.01 Pa;
preparing an A5083 aluminum alloy back plate with a groove, and detecting the roundness and assembly size tolerance of the groove of the back plate to ensure that a 300mm cylindrical copper target can be just placed in the groove of the back plate; turning threads on the bottom surface of a groove of the back plate, namely the welding surface of the aluminum alloy back plate, wherein thread protrusions are formed after the thread processing, the distance between every two adjacent thread protrusions is 0.45mm, and the height of each thread protrusion is 0.15 mm; then carrying out acid washing, water washing and drying treatment on the A5083 aluminum alloy back plate, wherein acid liquor is prepared from hydrofluoric acid, nitric acid and water according to the volume ratio of 1:3:4, the acid washing time is 2min, then carrying out water washing by tap water, and finally carrying out blow-drying by using an air gun;
as shown in fig. 1, before the assembly treatment, a titanium film is plated on the welding surface of the copper target, while the aluminum alloy backboard with the groove is provided with threads on the welding surface at the bottom of the groove, and then the copper target plated with the titanium film is placed into the groove of the a5083 aluminum alloy backboard, so that the titanium film is in contact with the welding surface of the a5083 aluminum alloy backboard to complete the assembly treatment, and then the whole is placed into a jacket;
(2) sealing the sheath obtained in the step (1) by adopting argon arc welding, and degassing after helium leakage inspection reaches the standard; wherein the degassing treatment temperature is 350 ℃, the vacuum degree is less than 0.001Pa, and the time is 3 h;
(3) placing the capsule degassed in the step (2) into a hot isostatic pressing machine for hot isostatic pressing welding, wherein the temperature of the hot isostatic pressing welding is 450 ℃, the pressure is 105Mpa, and the time is 5 hours, removing the capsule to finish the diffusion welding of the copper target and the aluminum alloy backboard; and (4) sequentially carrying out machining, size detection, cleaning, drying, packaging and delivery on the copper target assembly obtained by diffusion welding.
Example 2
This example provides a diffusion welding method for a copper target and an aluminum alloy backing plate, which is identical to example 1 except that the thickness of the titanium film in step (1) is changed to 3 μm.
Example 3
This example provides a diffusion welding method for a copper target and an aluminum alloy backing plate, which is identical to example 1 except that the thickness of the titanium film in step (1) is changed to 6 μm.
Example 4
In the embodiment, the size of the thread in the step (1) is changed into 'the distance between adjacent thread protrusions is 0.3mm, the height of the thread protrusions is 0.05 mm', and other conditions are completely the same as those in the embodiment 1.
Example 5
In the embodiment, the size of the thread in the step (1) is changed into 'the distance between adjacent thread protrusions is 0.6mm, the height of the thread protrusions is 0.25 mm', and other conditions are completely the same as those in the embodiment 1.
Example 6
In the embodiment, the hot isostatic pressing condition in the step (3) is changed into 'the hot isostatic pressing welding temperature is 400 ℃, the pressure is 120Mpa, and the time is 8 h', and other conditions are completely the same as those in the embodiment 1.
Example 7
In the embodiment, the hot isostatic pressing condition in the step (3) is changed into 'the hot isostatic pressing welding temperature is 500 ℃, the pressure is 110Mpa, and the time is 3 h', and other conditions are completely the same as those in the embodiment 1.
Example 8
The embodiment provides a diffusion welding method of a copper target and an aluminum alloy back plate, which comprises the following steps:
(1) preparing a cylindrical copper target with the purity of 6N and the diameter of 300mm, turning and smoothing the welding surface of the copper target by using a diamond blade, cleaning and drying, wherein isopropanol cleaning liquid is used for ultrasonic cleaning for 5min, and then vacuum drying is carried out for 40min under the condition that the vacuum degree is less than 0.01 Pa; plating a titanium film with the thickness of 4 mu m on the welding surface of the copper target by adopting a vacuum magnetron sputtering method, carrying out cleaning and drying treatment at the current of 15A, the bias voltage of 80V, the temperature of 100 ℃ and the time of 4h, wherein isopropanol cleaning liquid is adopted for ultrasonic cleaning for 20min, and then carrying out vacuum drying for 100min under the condition that the vacuum degree is less than 0.01 Pa;
preparing an A5083 aluminum alloy back plate with a groove, and detecting the roundness and assembly size tolerance of the groove of the back plate to ensure that a 300mm cylindrical copper target can be just placed in the groove of the back plate; turning threads on the bottom surface of a groove of the back plate, namely the welding surface of the aluminum alloy back plate, wherein thread protrusions are formed after the thread processing, the distance between every two adjacent thread protrusions is 0.5mm, and the height of each thread protrusion is 0.18 mm; then carrying out acid washing, water washing and drying treatment on the A5083 aluminum alloy back plate, wherein acid liquor is prepared from hydrofluoric acid, nitric acid and water according to the volume ratio of 1:3:3, the acid washing time is 5min, then carrying out water washing by tap water, and finally carrying out blow-drying by using an air gun;
putting the copper target material plated with the titanium film into a groove of an A5083 aluminum alloy back plate to enable the titanium film to be in contact with a welding surface of the A5083 aluminum alloy back plate to complete assembly treatment, and then putting the whole body into a jacket;
(2) sealing the sheath obtained in the step (1) by adopting argon arc welding, and degassing after helium leakage inspection reaches the standard; wherein the degassing treatment temperature is 200 ℃, the vacuum degree is less than 0.001Pa, and the time is 2 h;
(3) placing the capsule degassed in the step (2) into a hot isostatic pressing machine for hot isostatic pressing welding, wherein the hot isostatic pressing welding temperature is 420 ℃, the pressure is 105Mpa, and the time is 4h, removing the capsule to finish the diffusion welding of the copper target and the aluminum alloy backboard; and (4) sequentially carrying out machining, size detection, cleaning, drying, packaging and delivery on the copper target assembly obtained by diffusion welding.
Example 9
The embodiment provides a diffusion welding method of a copper target and an aluminum alloy back plate, which comprises the following steps:
(1) preparing a cylindrical copper target with the purity of 6N and the diameter of 300mm, turning and smoothing the welding surface of the copper target by using a diamond blade, cleaning and drying, wherein isopropanol cleaning liquid is used for ultrasonic cleaning for 20min, and then vacuum drying is carried out for 100min under the condition that the vacuum degree is less than 0.01 Pa; plating a titanium film with the thickness of 5 mu m on the welding surface of the copper target by adopting a vacuum magnetron sputtering method, carrying out cleaning and drying treatment at the current of 25A, the bias voltage of 130V, the temperature of 150 ℃ and the time of 2h, wherein isopropanol cleaning liquid is adopted for ultrasonic cleaning for 5min, and then carrying out vacuum drying for 20min under the condition that the vacuum degree is less than 0.01 Pa;
preparing an A5083 aluminum alloy back plate with a groove, and detecting the roundness and assembly size tolerance of the groove of the back plate to ensure that a 300mm cylindrical copper target can be just placed in the groove of the back plate; carrying out thread turning treatment on the bottom surface of the groove of the back plate, namely the welding surface of the aluminum alloy back plate, wherein thread protrusions are formed after the thread processing, the distance between every two adjacent thread protrusions is 0.55mm, and the height of each thread protrusion is 0.2 mm; then carrying out acid washing, water washing and drying treatment on the A5083 aluminum alloy back plate, wherein acid liquor is prepared from hydrofluoric acid, nitric acid and water according to the volume ratio of 1:3:6, the acid washing time is 2min, then carrying out water washing by tap water, and finally carrying out blow-drying by using an air gun;
putting the copper target material plated with the titanium film into a groove of an A5083 aluminum alloy back plate to enable the titanium film to be in contact with a welding surface of the A5083 aluminum alloy back plate to complete assembly treatment, and then putting the whole body into a jacket;
(2) sealing the sheath obtained in the step (1) by adopting argon arc welding, and degassing after helium leakage inspection reaches the standard; wherein the degassing treatment temperature is 400 ℃, the vacuum degree is less than 0.001Pa, and the time is 5 h;
(3) placing the capsule degassed in the step (2) into a hot isostatic pressing machine for hot isostatic pressing welding, wherein the hot isostatic pressing welding temperature is 480 ℃, the pressure is 105Mpa, and the time is 7 hours, removing the capsule to finish the diffusion welding of the copper target and the aluminum alloy backboard; and (4) sequentially carrying out machining, size detection, cleaning, drying, packaging and delivery on the copper target assembly obtained by diffusion welding.
Comparative example 1
The comparative example provides a diffusion welding method for a copper target and an aluminum alloy back plate, wherein the titanium film in the step (1) is changed into a nickel film, and other conditions are completely the same as those in the example 1.
Comparative example 2
The comparative example provides a diffusion welding method of a copper target and an aluminum alloy back plate, which omits the step (1) of plating a titanium film with the thickness of 5 mu m on the welding surface of the copper target by adopting a vacuum magnetron sputtering method, and after the A5083 aluminum alloy back plate is subjected to acid washing, water washing and drying treatment, plating a titanium film with the thickness of 5 mu m on the welding surface with threads of the A5083 aluminum alloy back plate by adopting the vacuum magnetron sputtering method, wherein other conditions are completely the same as those in the example 1.
The copper target assemblies obtained by diffusion welding in the above examples and comparative examples were subjected to ultrasonic C-scan imaging flaw detector testing, and specific testing conditions for comparison reference standards are shown in table 1, while the welding joining degree of each copper target assembly obtained by ultrasonic C-scan imaging flaw detector testing is shown in table 2.
TABLE 1
| Detection conditions | Standard sample |
| Probe head | 5MHZ |
| Acoustic velocity of material | 4800 |
| Distance to water | 50-65mm |
| Distance between X-axis | 0.5mm |
| Distance between Y-axis | 0.5mm |
| Scanning speed | 250mm/s |
| Threshold value | TH＝60 |
TABLE 2
The following points can be seen from table 2:
(1) in examples 1 to 9, the diffusion welding method of the present invention is adopted, that is, a titanium film is plated on the welding surface of the copper target, and the welding bonding degree between the copper target and the aluminum alloy backing plate is enhanced by the good diffusibility of the titanium film and the diffusion of titanium to the aluminum alloy backing plate; in addition, the titanium film is plated on the welding surface of the copper target, which is beneficial to enhancing the welding combination degree, thereby simplifying the operation and saving the cost of raw materials; the welding combination degree of the copper target material and the aluminum alloy back plate is over 99 percent through the detection of an ultrasonic C scanning imaging flaw detector by the copper target material assembly prepared by the diffusion welding method;
(2) comparing example 1 with comparative example 1, it can be seen that the titanium film with the same thickness is more helpful to enhance the welding bonding degree between the copper target and the aluminum alloy back plate than the nickel film, and the titanium film becomes the highest choice for cost performance because the cost of the metal nickel is higher;
(3) it can be seen from the comparison between example 1 and comparative example 2 that the titanium film with the same thickness is plated on the welding surface with the threads of the A5083 aluminum alloy back plate, and the titanium film on the welding surface with the threads is not enough in uniformity due to the fact that the welding surface is at the bottom of the groove due to the fact that a certain angle exists in vacuum magnetron sputtering, and particularly, the thickness difference of the titanium film at the edge and the center of the welding surface with the threads is large, so that the welding combination degree between the copper target and the aluminum alloy back plate is only 89.4%;
in conclusion, the diffusion welding method provided by the invention has the advantages that the titanium film is plated on the relatively smooth welding surface of the copper target material, and the welding combination degree between the copper target material and the aluminum alloy backboard is enhanced through the diffusion effect of titanium on the aluminum alloy backboard; the welding combination degree of the copper target material and the aluminum alloy back plate is more than 99% by the detection of an ultrasonic C scanning imaging flaw detector.
The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (10)
1. A diffusion welding method of a copper target and an aluminum alloy back plate is characterized by comprising the following steps:
(1) plating a titanium film on the welding surface of the copper target, assembling the copper target plated with the titanium film and the aluminum alloy back plate, and then integrally placing the copper target plated with the titanium film and the aluminum alloy back plate into a jacket;
(2) sealing the sheath obtained in the step (1) and then degassing;
(3) and (3) carrying out hot isostatic pressing welding on the sheath degassed in the step (2), and then removing the sheath to finish diffusion welding of the copper target and the aluminum alloy backboard.
2. The diffusion bonding method of claim 1, wherein the thickness of the titanium film of step (1) is 3-6 μm;
preferably, the titanium film coating method in the step (1) is physical vapor deposition, preferably vacuum magnetron sputtering;
preferably, the current of the vacuum magnetron sputtering is 15-25A, the bias voltage is 80-130V, the temperature is 100-150 ℃, and the time is 2-4 h.
3. The diffusion welding method according to claim 1 or 2, wherein before the titanium plating in step (1), the copper target welding surface is subjected to welding surface processing, and then is subjected to cleaning and drying treatment;
preferably, the welding surface of the copper target is subjected to smoothing treatment;
preferably, the smoothing treatment is turning with a diamond blade;
preferably, the cleaning treatment is ultrasonic cleaning by using an isopropanol cleaning solution;
preferably, the ultrasonic cleaning time is 5-20 min;
preferably, the drying treatment is a vacuum drying treatment;
preferably, the vacuum degree of the vacuum drying treatment is less than 0.01 Pa;
preferably, the drying time of the vacuum drying treatment is 40-100 min.
4. The diffusion bonding method according to any one of claims 1 to 3, wherein the titanium film-plated copper target material is subjected to a cleaning and drying treatment before the assembling treatment in step (1);
preferably, the cleaning treatment is ultrasonic cleaning by using an isopropanol cleaning solution;
preferably, the ultrasonic cleaning time is 5-20 min;
preferably, the drying treatment is a vacuum drying treatment;
preferably, the vacuum degree of the vacuum drying treatment is less than 0.01 Pa;
preferably, the drying time of the vacuum drying treatment is 40-100 min.
5. The diffusion welding method of any one of claims 1 to 4, wherein the aluminum alloy backing plate of step (1) is provided with a groove, and the bottom surface of the groove is the welding surface of the aluminum alloy backing plate;
preferably, the welding surface of the aluminum alloy backboard is processed;
preferably, the welding surface of the aluminum alloy back plate is subjected to thread turning treatment;
preferably, the thread is processed to form a thread bulge;
preferably, the distance between adjacent thread protrusions is 0.3-0.6 mm;
preferably, the height of the thread protrusions is 0.05-0.25 mm;
preferably, in a cross section perpendicular to the extension direction of the thread, the dimension of the thread protrusion is gradually reduced in a direction away from the back plate.
6. The diffusion welding method according to any one of claims 1 to 5, wherein the aluminum alloy backing plate is subjected to pickling, washing with water, and drying treatment before the assembling treatment of step (1);
preferably, the acid solution used for acid washing is prepared from hydrofluoric acid, nitric acid and water according to the volume ratio of 1:3: 2-6;
preferably, the pickling time is 2-8 min;
preferably, the drying treatment is air gun blow drying.
7. The diffusion welding method of any one of claims 1-6, wherein the can seal of step (2) is welded using argon arc welding;
preferably, the helium leakage check is carried out after the canning cover is sealed in the step (2);
preferably, the temperature of the degassing treatment in the step (2) is 200-400 ℃;
preferably, the vacuum degree of the degassing treatment in the step (2) is less than 0.001 Pa;
preferably, the degassing treatment time in the step (2) is 2-5 h.
8. The diffusion welding process of any one of claims 1-7, wherein step (3) the hot isostatic pressing welding is performed in a hot isostatic press;
preferably, the temperature of the hot isostatic pressing welding in the step (3) is 400-500 ℃;
preferably, the pressure of the hot isostatic pressing welding in the step (3) is more than or equal to 105 MPa;
preferably, the hot isostatic pressing welding in the step (3) is carried out for 3-8 h;
preferably, the copper target material assembly obtained by diffusion welding in the step (3) is subjected to machining, size detection, cleaning, drying, packaging and shipment in sequence.
9. Diffusion welding method according to any of the claims 1-8, characterized in that the diffusion welding method comprises the steps of:
(1) sequentially carrying out turning smoothing, cleaning and drying treatment on a copper target welding surface, plating a titanium film with the thickness of 3-6 mu m on the copper target welding surface by adopting a vacuum magnetron sputtering method, assembling the copper target plated with the titanium film and an aluminum alloy back plate, and then integrally placing the copper target and the aluminum alloy back plate into a jacket;
the aluminum alloy backboard is provided with a groove, the bottom surface of the groove is an aluminum alloy backboard welding surface, and the aluminum alloy backboard welding surface is subjected to thread turning treatment;
before the assembling treatment, cleaning and drying the copper target material plated with the titanium film, and carrying out acid washing, water washing and drying treatment on the aluminum alloy backboard;
(2) performing degassing treatment on the sheath obtained in the step (1) after welding and sealing the sheath by argon arc welding;
wherein the degassing treatment temperature is 200-400 ℃, the vacuum degree is less than 0.001Pa, and the time is 2-5 h;
(3) placing the sheath degassed in the step (2) into a hot isostatic pressing machine for hot isostatic pressing welding, and then removing the sheath to finish diffusion welding of the copper target and the aluminum alloy backboard;
wherein the temperature of the hot isostatic pressing welding is 400-500 ℃, the pressure is more than or equal to 105MPa, and the time is 3-8 h;
and (4) sequentially carrying out machining, size detection, cleaning, drying, packaging and delivery on the copper target assembly obtained by diffusion welding.
10. A copper target assembly produced by the diffusion bonding method of any one of claims 1 to 9.
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