CN114959618A - Sputtering target material and preparation method thereof - Google Patents
Sputtering target material and preparation method thereof Download PDFInfo
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- CN114959618A CN114959618A CN202210750088.3A CN202210750088A CN114959618A CN 114959618 A CN114959618 A CN 114959618A CN 202210750088 A CN202210750088 A CN 202210750088A CN 114959618 A CN114959618 A CN 114959618A
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 36
- 239000013077 target material Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 238000003466 welding Methods 0.000 claims abstract description 108
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 238000003756 stirring Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000010894 electron beam technology Methods 0.000 claims abstract description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 3
- 230000002285 radioactive effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
- B23K20/122—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a sputtering target material and a preparation method thereof. The welding shell is tightly combined with the target body through friction stir welding or electron beam welding. The preparation method of the sputtering target comprises the following steps: the method comprises the following steps: the bottom of the target body is attached with a metal plate, and the metal ring is embedded in the circumferential direction of the target body, so that the target body is embedded into a groove space formed by the metal plate and the metal ring; step two: the edges of the metal ring, the target body and the metal plate are welded, and the bottom area of the metal plate and the target body is welded, so that a welding shell wrapping the outer side and the bottom of the target body is formed. The sputtering target material prepared by the method has long service life and obviously improved hardness.
Description
Technical Field
The invention relates to the technical field of semiconductor target manufacturing, in particular to a sputtering target and a preparation method thereof.
Background
The sputtering target material is one of important raw materials in the preparation process of semiconductor integrated circuits, mainly comprises Al, Ni, Cu, Ti and alloy, and is mainly used for preparing physical vapor deposition films of contacts, through holes, interconnection lines and the like in the integrated circuits.
The process of forming the material surface material deposit by magnetron sputtering is: the surface of a target (material to be sputtered) is bombarded by accelerated ions, so that atoms on the surface of the target leave the target and are deposited on the surface of a substrate, and bombarded solid is a raw material for depositing a film by a sputtering method and is called a sputtering target.
In the use process of the sputtering target, the change of the appearance size and the shape directly influences the service life of the target, and in order to reduce the manufacturing cost of an integrated circuit and improve the service life of the target, how to ensure the shape and the size of the sputtering target becomes one of the key factors for reducing the production cost and improving the service life of the target. However, in the existing long-life target material, because the sputtering target material is mainly made of high-purity materials, the high-purity materials are generally low in strength and hardness, deformation is easily generated in sputtering bombardment, and the service life of the sputtering target material is seriously reduced.
Disclosure of Invention
The invention aims to provide a sputtering target material and a preparation method thereof, and aims to solve the technical problems that in the prior art, a long-life high-purity target material is low in hardness, and the service life of the target material is shortened due to easy deformation in use.
In order to achieve the purpose, the invention provides the following technical scheme:
in one aspect, the invention provides a sputtering target, which comprises a target body and a welding shell welded and wrapped on the bottom and the outer side of the target body.
Furthermore, the welding shell is tightly combined with the target body through friction stir welding or electron beam welding.
Further, the thickness of the welding shell at the outer side of the coating target material body is larger than that of the welding shell at the bottom of the coating target material body.
Further, the welding shell wraps the outer side portion of the target body.
Furthermore, a threaded hole is formed in the edge position of the bottom of the welding shell.
On the other hand, the invention also provides a preparation method of the sputtering target material, which comprises the following steps:
the method comprises the following steps: the bottom of the target body is pasted with a metal plate, and the metal ring is embedded in the circumferential direction of the target body, so that the target body is embedded into a groove space formed by the metal plate and the metal ring;
step two: and welding the edge parts of the target body, the metal ring and the metal plate and welding the contact area of the metal plate and the bottom of the target body so as to form a welding shell wrapping the outer side and the bottom of the target body.
Further, the preparation method also comprises the third step of: and cutting the upper edge of the welding shell positioned on the outer side of the target material body, and machining a threaded hole at the edge of the bottom of the welding shell.
Further, the welding is friction stir welding or electron beam welding; when the contact surface of the bottom of the target material and the metal plate is welded by adopting a friction stir welding mode, the stirring head extends into the contact surface to rotate to melt the two materials to realize fusion, and the advancing track of the stirring head is a spiral line or radioactive rays.
Further, the metal plate is an aluminum alloy plate, and the metal ring is an aluminum alloy ring.
Further, the thickness of the target body is 30-40mm, the thickness of the metal plate is 20-30mm, and the thickness of the metal ring is 15 mm.
Compared with the prior art, the invention has the beneficial effects that:
according to the sputtering target and the preparation method thereof, the target body and the aluminum alloy back plate are tightly welded and fixed at the bottom and the circumferential direction of the target body, so that the bottom and the outer side of the target body are wrapped by the tightly connected welding shell, and the following advantages are realized: firstly, the overall hardness of the target is improved, and the technical problems of low hardness and easy deformation of a water-cooling surface of the target with long service life are effectively solved; secondly, the target material body and the welding shell are fused into a whole, and the target material body and the welding shell are tightly and firmly combined; thirdly, the thickness of the welding shell at the bottom of the target body is smaller, so that the hardness of the target is improved, and the long service life of the target is not influenced.
Drawings
FIG. 1 is a schematic view of the assembly of a target body with a metal plate and a metal ring;
FIG. 2 is a schematic view of the structure of a sputtering target according to example 1;
FIG. 3 is a schematic view of the structure of a sputtering target according to example 2;
fig. 4 is a schematic structural view of a sputtering target of example 3;
FIG. 5 is a schematic view of a weld trace;
FIG. 6 is a schematic view of another weld trace;
fig. 7 is a hardness test chart of the sputtering target.
In the figure, 1-target body; 2-welding the shell; 21-a threaded hole; 3-a metal plate; 4-metal ring.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", "front", "rear", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, only for the convenience of describing the present invention and simplifying the description, rather than to indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore, it should be noted that the terms "mounted" and "connected" should be interpreted broadly, for example, the term "may be used in the present invention to refer to either a fixed connection, a detachable connection, a mechanical connection, an indirect connection via an intermediate medium, or an electrical connection.
Example 1
The embodiment discloses a sputtering target, which comprises a target body 1 and a welding shell 2 wrapping the bottom and the outer side of the target body 1.
Specifically, the welding shell 2 is tightly combined with the target body 1 through friction stir welding, when the bottom of the target is welded with the contact surface of the metal plate, the stirring head extends to the depth of the contact surface and then rotates to melt the two materials to realize fusion, and the moving track of the stirring head is a spiral line or a radioactive ray, as shown in fig. 5 or fig. 6.
Specifically, the thickness of the welding shell 2 covering the outer side of the target body 1 is larger than the thickness of the welding shell 2 covering the bottom of the target body 1.
Specifically, the welding shell 2 wraps the outer side portion of the target body 1, and preferably, the welding shell 2 wraps the lower half portion of the outer side of the target body 1.
As shown in the figure, the sputtering target in this embodiment is a stepped form with a narrow top and a wide bottom, the welding shell 2 wrapping the bottom of the target body 1 is of a circular structure, the welding shell 2 wrapping the outer side of the target body 1 is of a circular structure, the upper end face and the lower end face of the target body 1 are both circular, the diameter of the upper end face is smaller than that of the lower end face, and the circumferential direction of the upper end face of the target body 1 is connected with the inner side of the welding shell 2 wrapping the outer side of the target body 1 through an oblique line.
The bottom edge of the welding shell 2 is provided with a threaded hole 21. Preferably, at least one threaded hole 21 is formed in the bottom of the welding shell 2 wrapping the outer side of the target body 1, the threaded holes 21 are uniformly distributed along the periphery of the target body 1 and penetrate through the welding shell 2, and the threaded holes 21 are stepped threaded holes with narrow upper width and are used for fixing the sputtering target.
The preparation method of the sputtering target comprises the following steps:
the method comprises the following steps: the bottom of the target body 1 is pasted with a metal plate 3, and a metal ring 4 is embedded in the circumferential direction of the target body 1, so that the target body 1 is embedded into a groove space formed by the metal plate 3 and the metal ring 4;
step two: and welding the edge parts of the target body 1, the metal ring 4 and the metal plate 3 and welding the bottom contact surface area of the metal plate 3 and the target body 1 to form a welding shell 2 wrapping the outer side and the bottom of the target body 1.
Step three: cutting the upper edge of the welding shell 2 positioned outside the target material body 1, and machining a threaded hole 21 at the edge position of the bottom of the welding shell 2.
Specifically, the welding is friction stir welding.
Specifically, the metal plate 3 is an aluminum alloy plate, and the metal ring 4 is an aluminum alloy ring.
Specifically, the thickness of the target body 1 is 30mm, the thickness of the metal plate 3 is 20mm, and the thickness of the metal ring 4 is 15 mm.
When friction stir welding is carried out, at the edge of the target material body 1, a stirring head sequentially penetrates through the metal plate 3 and the edge of the target material body 1 from the bottom to the top, extends into the metal ring 4, and welds the metal plate 3, the edge of the target material body 1 and the metal ring 4 into a whole; when the contact surface of the bottom surface of the metal plate 3 and the bottom surface of the target body 1 is welded, the stirring head upwards penetrates through the metal plate 3 from the bottom and extends into the contact surface of the metal plate and the bottom surface of the target body, and the stirring head rotating at a high speed melts the contact surface of the bottom of the metal plate 3 and the bottom of the target body 1 to enable the contact surface to be welded into a whole.
As shown in fig. 1, the metal ring 4, the metal plate 3 and the target body 1 before sputtering target welding are schematically shown in positional relationship.
As shown in fig. 2, which is a schematic view of the welding process, the upwardly protruding circular arc represents the stirring head, and the filled oblique line represents the welding shell 2. It can be seen that the thickness of the welding shell 2 located at the circumferential direction of the target body 1 is large, the thickness of the welding shell 2 located at the bottom of the target body 1 is small, the welding track of the welding shell 2 located at the bottom of the target body 1 is a plurality of sequentially nested circular arcs, a gap is reserved between every two adjacent circular arcs, namely, a metal material which is not welded is arranged between every two adjacent circular arcs, that is, the welding shell 2 located at the bottom of the target body 1 is formed by a plurality of sequentially nested circular arc welding layers and metal materials between the circular arcs, and the welding layers are formed by mixing the target body 1 and the metal plates 2 through friction stir welding.
After the upper end edge of the welding shell 2 in the circumferential direction of the target body 1 is cut, the stepped threaded hole 21 is processed, and the sputtering target of the embodiment is obtained, as shown in fig. 2.
Preferably, the travel tracks of the bottom welding head are two types: the first is a circular arc extending spirally from outside to inside, as shown in fig. 5; secondly, a plurality of concentric circles are sequentially sleeved, and then straight lines penetrating through the circle centers of the concentric circles and two tail ends of the outermost circle are added, the number of the straight lines is 3, and the outermost circle is divided into a plurality of sectors with equal areas by the 3 straight lines, as shown in fig. 6.
Example 2
The difference from embodiment 1 is that the welding shell 2 located at the bottom of the target material body 1 is a disk-shaped structure, that is, the metal plate 3 and the bottom of the target material body 1 are all welded, if the welding track is a plurality of sequentially nested circular arcs, two adjacent circular arcs are adjacent to each other, and the highest points of the stirring heads welded twice are adjacent to each other during welding, that is, no gap is reserved between two adjacent circular arcs, that is, the welding shell 2 located at the bottom of the target material body 1 is a disk-shaped structure, and a stir welding layer is filled in the disk-shaped structure, that is, the welding layer is made of a material formed by mixing the target material body 1 and the metal plate 2 through friction stir welding. After the upper end edge of the welding shell 2 in the circumferential direction of the target body 1 is cut, the stepped threaded hole 21 is processed, and the sputtering target of the embodiment is obtained, as shown in fig. 3.
Example 3
The difference from embodiment 1 is that the welding shell 2 located at the bottom of the target material body 1 is a disc-shaped structure, the upper end of the disc-shaped structure is provided with a protruding welding shell, that is, the metal plate 3 and the bottom of the target material body 1 are all welded, if the welding track is a plurality of sequentially nested circular arcs, two adjacent circular arcs are close to each other, and the edges of the stirring heads welded twice are close to each other during welding, the highest point of the stirring head is not close to each other, that is, no gap is reserved between two adjacent circular arcs, that is, the welding shell 2 located at the bottom of the target material body 1 is a circular structure, the stirring welding layer is filled in the circular structure, the upper end face of the circular structure is provided with a protruding welding layer of a plurality of sequentially nested circular arc structures, and the material of the welding layer is formed by mixing the target material body 1 and the metal plate 2 through stirring friction welding.
It can be seen that the welding shell 2 at the bottom of the target body 1 comprises a disc-shaped structure and a protruding arc-shaped welding layer arranged at the upper end of the disc shape.
After the upper end edge of the welding shell 2 in the circumferential direction of the target body 1 is cut, the stepped threaded hole 21 is processed, and the sputtering target of the embodiment is obtained, as shown in fig. 4.
Example 4
The embodiment discloses a sputtering target, which comprises a target body 1 and a welding shell 2 wrapping the bottom and the outer side of the target body 1.
Specifically, the welding shell 2 is tightly combined with the target body 1 through electron beam welding.
Specifically, the thickness of the welding shell 2 covering the outer side of the target body 1 is smaller than the thickness of the welding shell 2 covering the bottom of the target body 1.
Specifically, the welding shell 2 wraps the outer side portion of the target body 1, and preferably, the welding shell 2 wraps the lower half portion of the outer side of the target body 1.
The preparation method of the sputtering target comprises the following steps:
the method comprises the following steps: the target body 1 covers the metal plate 3, and the metal ring 4 is embedded in the circumferential direction of the target body 1, so that the target body 1 is embedded into a groove space formed by the metal plate 3 and the metal ring 4;
step two: the edges of the metal ring 4, the target body 1 and the metal plate 3 are welded, and the bottom areas of the metal plate 3 and the target body 1 are welded, so that the welding shell 2 wrapping the outer side and the bottom of the target body 1 is formed.
Step three: cutting the upper edge of the welding shell 2 positioned at the outer side of the target material body 1, and machining a threaded hole 21 at the edge position of the bottom of the welding shell 2.
Specifically, the welding is electron beam welding.
Specifically, the metal plate 3 is an aluminum alloy plate, and the metal ring 4 is an aluminum alloy ring.
Specifically, the thickness of the target body 1 is 40mm, the thickness of the metal plate 3 is 30mm, and the thickness of the metal ring 4 is 15 mm.
Comparative example 1
In this embodiment, the middle of the long-life target is the target body, and the backing plate is circumferentially disposed, and since the target body is made of a high-purity material, the hardness of the target body is very low in the longitudinal direction, and the requirements of design and practical use cannot be met.
Effects of the embodiment
As shown in FIG. 7, the hardness of the sputtering target of the present invention was tested, and the material of the target body was a high purity aluminum alloy (5N5AL) with a hardness of 23-26 HB; the material of the back plate (aluminum alloy plate and aluminum alloy ring) is A6061, and the hardness thereof is 103-111 HB; the hardness of the welding layer after the back plate and the target body are welded is 59 HB.
Therefore, the target body is welded with the aluminum alloy back plate at the bottom and the circumferential direction of the target body, so that the bottom and the back plate of the target body are both welding shells, and the target body mainly has the following three technical effects: firstly, the hardness of the target body is improved, and the technical problem of low hardness of the water-cooling surface of the long-service-life target is effectively solved; secondly, the target material body and the welding shell are fused into a whole, and the target material body and the welding shell are tightly combined; and the thickness of the welding shell at the bottom of the target body is smaller, so that the hardness of the target is improved, and the long service life of the target is not influenced.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. The sputtering target is characterized by comprising a target body (1) and a welding shell (2) which is welded and wraps the bottom and the outer side of the target body (1).
2. The sputter target according to claim 1, wherein the weld shell (2) is tightly bonded to the target body (1) by friction stir welding or electron beam welding.
3. The sputter target according to claim 1, characterized in that the thickness of the weld shell (2) covering the outer side of the target body (1) is larger than the thickness of the weld shell (2) covering the bottom of the target body (1).
4. The sputter target according to claim 1, wherein the weld shell (2) wraps the outer portion of the target body (1).
5. A sputter target according to claim 3, characterized in that the welding shell (2) is provided with a threaded hole (21) at its bottom edge.
6. A method for preparing a sputter target according to any of claims 1 to 5, characterized in that it comprises the following steps:
the method comprises the following steps: the bottom of the target body (1) is pasted with a metal plate (3), and a metal ring (4) is embedded in the circumferential direction of the target body (1), so that the target body (1) is embedded into a groove space formed by the metal plate (3) and the metal ring (4);
step two: the edge parts of the target body (1), the metal ring (4) and the metal plate (3) are welded, and the contact area of the metal plate (3) and the bottom of the target body (1) is welded, so that a welding shell (2) wrapping the outer side and the bottom of the target body (1) is formed.
7. The method for preparing a sputtering target according to claim 6, further comprising the step three: cutting the upper edge of the welding shell (2) positioned at the outer side of the target material body (1), and machining a threaded hole (21) at the edge position of the bottom of the welding shell (2).
8. The method for preparing a sputtering target according to claim 6, wherein the welding is friction stir welding or electron beam welding; when the contact surface of the bottom of the target material and the metal plate is welded by adopting a friction stir welding mode, the stirring head extends into the contact surface to be deeply rotated to fuse the two materials to realize fusion, and the advancing track of the stirring head is a spiral line or radioactive rays.
9. The method for preparing a sputtering target according to claim 6, wherein the metal plate (3) is an aluminum alloy plate, and the metal ring (4) is an aluminum alloy ring.
10. The method for preparing a sputtering target according to claim 6, wherein the thickness of the target body (1) is 30-40mm, the thickness of the metal plate (3) is 20-30mm, and the thickness of the metal ring (4) is 15 mm.
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| CN202210750088.3A CN114959618A (en) | 2022-06-29 | 2022-06-29 | Sputtering target material and preparation method thereof |
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| CN202210750088.3A CN114959618A (en) | 2022-06-29 | 2022-06-29 | Sputtering target material and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115255596A (en) * | 2022-09-06 | 2022-11-01 | 浙江最成半导体科技有限公司 | Target, target assembly and manufacturing method thereof |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000265265A (en) * | 1999-03-12 | 2000-09-26 | Kojundo Chem Lab Co Ltd | Integrated structure type sputtering target |
| JP2001049427A (en) * | 1999-07-30 | 2001-02-20 | Kojundo Chem Lab Co Ltd | Integral sputtering target and its manufacture |
| US20040035698A1 (en) * | 2000-12-15 | 2004-02-26 | Ivanov Eugene Y. | Friction fit target assembly for high power sputtering operation |
| JP2007245211A (en) * | 2006-03-17 | 2007-09-27 | Mitsubishi Materials Corp | Manufacturing method of target having backing plate |
| CN101133182A (en) * | 2005-03-04 | 2008-02-27 | 日本轻金属株式会社 | Metal double layer structure and method for manufacturing the same and regeneration method of sputtering target employing that method |
| TW200815136A (en) * | 2006-09-12 | 2008-04-01 | Tosoh Smd Inc | Sputtering target assembly and method of making same |
| CN202530154U (en) * | 2012-03-12 | 2012-11-14 | 北京有色金属研究总院 | Sputtering target |
| CN202922105U (en) * | 2012-11-12 | 2013-05-08 | 北京有色金属研究总院 | Connecting structure of target and back plate |
| CN104646817A (en) * | 2014-12-22 | 2015-05-27 | 有研亿金新材料有限公司 | Connection method of aluminum target material as sputtering target material and aluminum alloy backboard |
| CN105149764A (en) * | 2015-08-24 | 2015-12-16 | 有研亿金新材料有限公司 | Target material and backboard welding method |
| KR101961596B1 (en) * | 2018-09-06 | 2019-03-25 | 군산대학교산학협력단 | Method for manufacturing sputter target and sputter gun for accomodating the sputter target |
| CN111304604A (en) * | 2020-03-03 | 2020-06-19 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for copper target and aluminum alloy back plate and prepared copper target assembly |
| CN111660003A (en) * | 2020-06-22 | 2020-09-15 | 浙江最成半导体科技有限公司 | Sputtering target welding method |
| TW202214892A (en) * | 2020-09-30 | 2022-04-16 | 日商古屋金屬股份有限公司 | Sputtering target-backing plate assembly, manufacturing method therefor, and recovery method for sputtering target |
-
2022
- 2022-06-29 CN CN202210750088.3A patent/CN114959618A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000265265A (en) * | 1999-03-12 | 2000-09-26 | Kojundo Chem Lab Co Ltd | Integrated structure type sputtering target |
| JP2001049427A (en) * | 1999-07-30 | 2001-02-20 | Kojundo Chem Lab Co Ltd | Integral sputtering target and its manufacture |
| US20040035698A1 (en) * | 2000-12-15 | 2004-02-26 | Ivanov Eugene Y. | Friction fit target assembly for high power sputtering operation |
| CN101133182A (en) * | 2005-03-04 | 2008-02-27 | 日本轻金属株式会社 | Metal double layer structure and method for manufacturing the same and regeneration method of sputtering target employing that method |
| JP2007245211A (en) * | 2006-03-17 | 2007-09-27 | Mitsubishi Materials Corp | Manufacturing method of target having backing plate |
| TW200815136A (en) * | 2006-09-12 | 2008-04-01 | Tosoh Smd Inc | Sputtering target assembly and method of making same |
| CN202530154U (en) * | 2012-03-12 | 2012-11-14 | 北京有色金属研究总院 | Sputtering target |
| CN202922105U (en) * | 2012-11-12 | 2013-05-08 | 北京有色金属研究总院 | Connecting structure of target and back plate |
| CN104646817A (en) * | 2014-12-22 | 2015-05-27 | 有研亿金新材料有限公司 | Connection method of aluminum target material as sputtering target material and aluminum alloy backboard |
| CN105149764A (en) * | 2015-08-24 | 2015-12-16 | 有研亿金新材料有限公司 | Target material and backboard welding method |
| KR101961596B1 (en) * | 2018-09-06 | 2019-03-25 | 군산대학교산학협력단 | Method for manufacturing sputter target and sputter gun for accomodating the sputter target |
| CN111304604A (en) * | 2020-03-03 | 2020-06-19 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for copper target and aluminum alloy back plate and prepared copper target assembly |
| CN111660003A (en) * | 2020-06-22 | 2020-09-15 | 浙江最成半导体科技有限公司 | Sputtering target welding method |
| TW202214892A (en) * | 2020-09-30 | 2022-04-16 | 日商古屋金屬股份有限公司 | Sputtering target-backing plate assembly, manufacturing method therefor, and recovery method for sputtering target |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115255596A (en) * | 2022-09-06 | 2022-11-01 | 浙江最成半导体科技有限公司 | Target, target assembly and manufacturing method thereof |
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