JPS63230870A - Sputtering target - Google Patents
Sputtering targetInfo
- Publication number
- JPS63230870A JPS63230870A JP6712687A JP6712687A JPS63230870A JP S63230870 A JPS63230870 A JP S63230870A JP 6712687 A JP6712687 A JP 6712687A JP 6712687 A JP6712687 A JP 6712687A JP S63230870 A JPS63230870 A JP S63230870A
- Authority
- JP
- Japan
- Prior art keywords
- target
- piece
- sputtering
- target piece
- discoid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 abstract 5
- 238000004544 sputter deposition Methods 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000009849 vacuum degassing Methods 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
この発明は、マグネトロンスパッタなどに好適なスパッ
タリングターゲットに関し、特に、スパッタリング速度
を速くしてスパッタリング能率を向上させ、かつ、歩留
りを高く保つことができるスパッタリングターゲットに
関する。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to a sputtering target suitable for magnetron sputtering, etc., and in particular, to a sputtering target suitable for magnetron sputtering, etc., and in particular, to increase sputtering speed to improve sputtering efficiency and to maintain high yield. Regarding sputtering targets that can be used.
［従来の技術］
光ディスクには、記録媒体となるテルル、セレンまたは
これらの金属の合金の薄膜層がスパッタリングにより形
成されている。このスパッタリングの方法としては、電
場と磁場が直交するいわゆるマグネトロン放電を利用し
てターゲットの近傍に高密度プラズマを作り、大電力に
よる高能率化を可能にしたマグネトロン型スパッタリン
グ（高速低温スパッタリング）が採用されている。これ
は、第４図に示すように、平板（例では円板）状のスパ
ッタリングターゲット！（以下、ターゲットと略す）を
銅製の冷却板２に溶着金属３により固定し、冷却板２の
下には中央にＮ極、外周部にＳ極がくるように磁石４を
配して、ターゲットｌの周辺に磁場を作り、イオンを加
速してスパッタリング効率を上げるものである。この方
法においては、第５図に示すようにターゲットｌの中心
から一定距離において一定幅のイオン照射密度の高い部
分が環状に集中的に減厚されることになる。このターゲ
ット１の製法としては、溶解鋳造法あるいは粉末焼結法
があるが、周知のようにセレン、テルル及びこれらの金
属の合金は非常に脆く割れやすいため歩留りが悪く、ま
た製造寸法も限られていた。そこで、出願人は、粉末の
素材を冷間でプレス成形し、脱ガス処理を行うことをを
骨子とする製造法を出願している（特開昭６１−１２４
５６５号公報）。[Prior Art] On an optical disk, a thin film layer of tellurium, selenium, or an alloy of these metals, which serves as a recording medium, is formed by sputtering. This sputtering method uses magnetron-type sputtering (high-speed low-temperature sputtering), which uses so-called magnetron discharge in which electric and magnetic fields are orthogonal to create high-density plasma near the target, making it possible to achieve high efficiency with high power. has been done. As shown in Figure 4, this is a sputtering target in the shape of a flat plate (disk in the example)! (hereinafter referred to as target) is fixed to a copper cooling plate 2 with welded metal 3, and a magnet 4 is arranged under the cooling plate 2 with the N pole in the center and the S pole in the outer periphery. A magnetic field is created around the ion to accelerate ions and increase sputtering efficiency. In this method, as shown in FIG. 5, a portion of a certain width with a high ion irradiation density at a certain distance from the center of the target l is intensively thinned in an annular manner. Target 1 can be manufactured by melting casting or powder sintering, but as is well known, selenium, tellurium, and alloys of these metals are extremely brittle and easily cracked, resulting in poor yields and limited manufacturing dimensions. was. Therefore, the applicant has applied for a manufacturing method that consists of cold press-forming a powder material and degassing it (Japanese Unexamined Patent Publication No. 61-124
565 Publication).
［発明が解決しようとする問題点］
ところで、上記のようなマグネトロン型スパッタリング
においては、減厚部が特定の位置に偏っているので、タ
ーゲット１の全体積中、３０％ぐらいしかスパッタされ
ず、材料の使用効率が悪いという問題点があった。また
、セレン、テルルあるいはこれらの金属の合金を粉末成
形してなるターゲットｌは、特にその密度すなわち空間
充填率が低いときに熱伝導率が低いので、大電力を使用
すると熱の冷却板への逃げが不充分となり、温度勾配が
生じてクラックが発生し、寿命が短くなってしまう。こ
の場合、ターゲットｌの密度を上げるようにすればよい
が、上記のように使用効率が悪いこと、高密度でかつ大
径のターゲットを製造するのは困難でコスト高となるこ
となどの不具合があった。[Problems to be Solved by the Invention] By the way, in the magnetron type sputtering as described above, since the reduced thickness portion is biased to a specific position, only about 30% of the total volume of the target 1 is sputtered. There was a problem with the inefficient use of materials. In addition, targets made by powder-molding selenium, tellurium, or alloys of these metals have low thermal conductivity, especially when their density or space filling factor is low, so when high power is used, heat is transferred to the cooling plate. There will be insufficient escape, a temperature gradient will occur, cracks will occur, and the lifespan will be shortened. In this case, it is possible to increase the density of the target l, but as mentioned above, there are problems such as poor usage efficiency and the difficulty and high cost of manufacturing a high-density, large-diameter target. there were.
［問題点を解決するための手段］
上記のような問題点を解決するために、この発明は、同
一の素材からなる複数のターゲット片を平面的に組み合
わせたもので、イオンの照射密度が高く、減厚部の大き
い箇所と、比較的減Ｆ′１．ｆｆｉの少ない箇所とをそ
れぞれ別のターゲット片として交換可能とし、また、前
者に高密度のターゲット片を、後者に低密度のターゲッ
ト片を配するようにしてもよい。[Means for Solving the Problems] In order to solve the above problems, the present invention combines a plurality of target pieces made of the same material in a planar manner, and has a high ion irradiation density. , where the thickness reduction is large and the relatively reduced thickness F'1. It is also possible to replace the portions with low ffi with separate target pieces, and to place a high-density target piece in the former and a low-density target piece in the latter.
［作用］
このようなスパッタリングターゲットは、冷却板との接
合を外せば個々のターゲット片毎に交換可能であり、減
厚の多い箇所のターゲット片のみを交換し、減厚の少な
いターゲット片を再使用することにより材料の使用効率
が向上する。また、イオンの照射量の多い箇所を高密度
とすれば、熱伝導率が向上されて熱が冷却板に逃がされ
、温度勾配が小さくなって熱歪によるクラックの発生が
防がれる。各ターゲット片は寸法が小さくてよいので、
製造が容易になりまたコストも低下する。[Function] Such a sputtering target can be replaced individually by removing the connection with the cooling plate. Only the target piece where the thickness has been reduced is replaced, and the target piece where the thickness has been less reduced is replaced. Its use improves the efficiency of material usage. In addition, by increasing the density of ion irradiation in areas where a large amount of ions are irradiated, the thermal conductivity is improved and heat is released to the cooling plate, reducing the temperature gradient and preventing the occurrence of cracks due to thermal strain. Each target piece can be small in size, so
Manufacturing is easier and costs are lower.
［実施例］ 以下、この発明の実施例を図面を参照して説明する。[Example] Embodiments of the present invention will be described below with reference to the drawings.
第１図及び第２図はこの発明の一実施例であり、このス
パッタリングターゲット５は、中央の円板状ターゲット
片６及びその外縁に嵌合された環状ターゲット片７から
構成され、両者は、同一の粉末素材をプレス成形してい
るが、前者は後者より相対密度すなわち空間充填率が高
く、空孔率が低くなっている。以下、さらに詳しく製法
を述べる。FIGS. 1 and 2 show an embodiment of the present invention, and the sputtering target 5 is composed of a central disc-shaped target piece 6 and an annular target piece 7 fitted to the outer edge of the disc-shaped target piece 6. Although the same powder materials are press-molded, the former has a higher relative density, that is, a space filling ratio, and a lower porosity than the latter. The manufacturing method will be described in more detail below.
肉厚１ｍｍの弾性材料からなり、内部に、直径２００ａ
＋ｍ、高さ１０（ｌｅＩｍの円柱状空間を有する°密閉
容器に、平均粒径５０μｍ、純度９９．９９％のテルル
粉末を充填し、真空脱ガス処理を行った後、外面から２
０００ ｋｇ／ｃａ＋”の静水圧を２分間加えて冷間ブ
レス成形し、相対密度９０％の成形体とした。この成形
体をバンドソーで切断して、厚さ８ＩＩＩＩ１１１直径
１Ｂ０ｎｍの円板状とし、さらに旋盤により切削して外
径１５２ｍ５＋φの環状ターゲット片７とした。また、
同様の、直径１８０ ｍｍ、高さ１００１の容器に同一
の素材を充填し、真空脱ガス処理を行い、４０００ ｋ
ｇ／ｃｍ”の静水圧を２分間加えて相対密度９４％の成
形体とし、バンドソーで切断して円板状とし、旋盤で一
切削して、上記の環状ターゲット片７の中央孔に嵌装さ
れる円板状ターゲット片６とした。両者の接触面には同
一のテーパが付されており、このテーバは通常は、図示
するようにスパッタリングによる損耗の形状に合わせて
上広がりとするが、上広がりでもよく、また、その角度
αは接触を密とするような適宜の値に設定される。上記
のように切削加工された環状ターゲット片７と円板状タ
ーゲット片６とを、インジウム−スズのような伝熱性の
よい溶着金属３を用いて銅製の冷却板２の上に固定して
いる。Made of elastic material with a wall thickness of 1 mm, and a diameter of 200 mm inside.
A closed container with a cylindrical space of +m and height 10 (leIm) is filled with tellurium powder with an average particle size of 50 μm and a purity of 99.99%, and after vacuum degassing treatment, 2
000 kg/ca+" hydrostatic pressure was applied for 2 minutes to form a molded body with a relative density of 90%. This molded body was cut with a band saw into a disk shape with a thickness of 8III111 and a diameter of 1B0 nm. Furthermore, it was cut with a lathe to obtain an annular target piece 7 with an outer diameter of 152 m5+φ.
A similar container with a diameter of 180 mm and a height of 100 mm was filled with the same material, subjected to vacuum degassing treatment, and heated to 4000 k
A hydrostatic pressure of "g/cm" was applied for 2 minutes to form a molded product with a relative density of 94%, which was cut into a disk shape with a band saw, completely ground with a lathe, and fitted into the center hole of the annular target piece 7. A disk-shaped target piece 6 was used.The contact surfaces of both have the same taper, and this taper is normally widened upward to match the shape of wear due to sputtering as shown in the figure. The annular target piece 7 and the disc-shaped target piece 6, which have been cut as described above, may be spread upward, and the angle α is set to an appropriate value to ensure close contact. It is fixed onto a cooling plate 2 made of copper using a welded metal 3 having good heat conductivity such as tin.
このようなターゲット５によりスパッタリングを行うと
、第２図に示すように、円板状ターゲット片６の中心か
ら一定の距離に一定の幅のイオン照射密度の高い部分が
環状に損耗されるが、この円板状ターゲット片６は高密
度となっているので熱伝導がよく、従って冷却板２によ
る冷却の効率が高く、イオンの照射量を上げてスパッタ
能率を向上することが可能である。スパッタリングを終
了したターゲットｌは、溶着金属３を溶融して冷却板２
から外し、円板状ターゲット片６のみを交換し、環状タ
ーゲット片７を再使用する。環状ターゲット片７は数回
の使用毎に交換すればよく、従って、ターゲットｌの材
料使用効率は大幅に上昇する。発明者らの実施において
は、円板状ターゲット片６を５回交換する毎に環状ター
ゲット片７を１回交換すればよく、トータルの使用効率
は７０％になった。When sputtering is performed using such a target 5, as shown in FIG. 2, a portion with a high ion irradiation density of a certain width at a certain distance from the center of the disk-shaped target piece 6 is worn out in an annular shape. Since the disc-shaped target piece 6 has a high density, it has good thermal conductivity, and therefore the efficiency of cooling by the cooling plate 2 is high, and it is possible to increase the amount of ion irradiation and improve the sputtering efficiency. After sputtering, the target l melts the weld metal 3 and passes it to the cooling plate 2.
Then, only the disc-shaped target piece 6 is replaced, and the annular target piece 7 is reused. The annular target piece 7 only needs to be replaced after every few uses, and therefore the material usage efficiency of the target 1 is greatly increased. In the inventors' implementation, it was only necessary to replace the annular target piece 7 once every five times the disk-shaped target piece 6 was replaced, and the total usage efficiency was 70%.
第３図は、この発明の他の実施例を示すもので、損耗の
少ないターゲットの中央部をさらに別体としたものであ
る。すなわち、中央部分を、密度の高い第２環状ターゲ
ット片８と低密度の円板状ターゲット片９とから構成し
ている。この例においては、スパッタリングにおいて主
に損耗されるのは、第２環状ターゲット片８であり、こ
れのみを交換することによりさらに材料使用効率を向上
することかできる。FIG. 3 shows another embodiment of the present invention, in which the central part of the target, which is subject to less wear and tear, is further separated. That is, the central portion is composed of the second annular target piece 8 with high density and the disc-shaped target piece 9 with low density. In this example, it is the second annular target piece 8 that is mainly worn out during sputtering, and by replacing only this, the material usage efficiency can be further improved.
［発明の効果］
以上詳述したように、この発明のスパッタリングターゲ
ットは、同一の素材からなる複数のターゲット片を下面
的に組み合わせたものであり、損耗の多い部分と少ない
部分とが個別に交換可能であり、材料の使用効率が向上
され、従って、スパッタリングのコストを大幅に低下す
ることができる。[Effects of the Invention] As detailed above, the sputtering target of the present invention is a combination of a plurality of target pieces made of the same material from the bottom, and the parts with more wear and the parts with less wear can be replaced individually. It is possible to improve the efficiency of material usage and thus significantly reduce the cost of sputtering.
また、損耗量の多い部分のみをその相対密度を高くする
ことにより、熱伝導率が高くなってスパッタリング能率
を向上することが可能になるとともに、製造コストの上
昇を抑えることができるという優れた効果を奏する。In addition, by increasing the relative density only in areas with a large amount of wear, thermal conductivity increases, making it possible to improve sputtering efficiency and suppressing increases in manufacturing costs. play.
第１図はこの発明の一実施例のスパッタリングターゲッ
トの断面図、第２図はその使用後の状態を示す断面図、
第３図はこの発明の他の実施例の断面図、第４図は従来
例の断面図、第５図はその使用後の断面図である。
５・・・・・・スパッタリングターゲット、６・・・・
・・円板状ターゲット片、
７・・・・・・環状ターゲット片、
８・・・・・・第２環状ターゲット片、９・・・・・・
円板状ターゲット片。FIG. 1 is a sectional view of a sputtering target according to an embodiment of the present invention, and FIG. 2 is a sectional view showing its state after use.
FIG. 3 is a sectional view of another embodiment of the present invention, FIG. 4 is a sectional view of a conventional example, and FIG. 5 is a sectional view of the conventional example. 5...Sputtering target, 6...
... Disc-shaped target piece, 7... Annular target piece, 8... Second annular target piece, 9...
Disc-shaped target piece.
Claims (2)
に組み合わされてなることを特徴とするスパッタリング
ターゲット。(1) A sputtering target characterized in that a plurality of target pieces made of the same material are combined in a planar manner.
とする特許請求の範囲第１項記載のスパッタリングター
ゲット。(2) The sputtering target according to claim 1, wherein the target pieces have different relative densities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6712687A JPS63230870A (en) | 1987-03-20 | 1987-03-20 | Sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6712687A JPS63230870A (en) | 1987-03-20 | 1987-03-20 | Sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63230870A true JPS63230870A (en) | 1988-09-27 |
Family
ID=13335902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6712687A Pending JPS63230870A (en) | 1987-03-20 | 1987-03-20 | Sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63230870A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5284539A (en) * | 1993-04-05 | 1994-02-08 | Regents Of The University Of California | Method of making segmented pyrolytic graphite sputtering targets |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58104181A (en) * | 1981-12-15 | 1983-06-21 | Fujitsu Ltd | Sputtering apparatus |
| JPS6155811A (en) * | 1984-08-27 | 1986-03-20 | 株式会社日立製作所 | Sputtering target for forming transparent conductive film |
-
1987
- 1987-03-20 JP JP6712687A patent/JPS63230870A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58104181A (en) * | 1981-12-15 | 1983-06-21 | Fujitsu Ltd | Sputtering apparatus |
| JPS6155811A (en) * | 1984-08-27 | 1986-03-20 | 株式会社日立製作所 | Sputtering target for forming transparent conductive film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5284539A (en) * | 1993-04-05 | 1994-02-08 | Regents Of The University Of California | Method of making segmented pyrolytic graphite sputtering targets |
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