JPS62114137A - Production of sputtering target for optical recording - Google Patents

Production of sputtering target for optical recording

Info

Publication number
JPS62114137A
JPS62114137A JP25291085A JP25291085A JPS62114137A JP S62114137 A JPS62114137 A JP S62114137A JP 25291085 A JP25291085 A JP 25291085A JP 25291085 A JP25291085 A JP 25291085A JP S62114137 A JPS62114137 A JP S62114137A
Authority
JP
Japan
Prior art keywords
tellurium
telluride
mixing
mixed
selenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25291085A
Other languages
Japanese (ja)
Inventor
Tetsushi Iwamoto
哲志 岩元
Akiyoshi Kato
加藤 明美
Masaru Kawakami
勝 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Toyo Soda Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Soda Manufacturing Co Ltd filed Critical Toyo Soda Manufacturing Co Ltd
Priority to JP25291085A priority Critical patent/JPS62114137A/en
Publication of JPS62114137A publication Critical patent/JPS62114137A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Abstract

PURPOSE:To stabilize sputtering conditions with a uniform compsn. having a high density and to improve productivity by mixing selenium, etc. with tellurium, bringing the same into reaction by heating in a vacuum or inert gaseous atmosphere, and subjecting the mixture to pulverizing in a nor oxidative atmosphere then to molding under pressurization. CONSTITUTION:The sputtering target for optical recording is obtd. by mixing >=1 kinds of metals such as selenium, titanium and silver with a tellurium ally, bringing the mixture into reaction by heating in he vacuum or inert gaseous atmosphere to form telluride and subjecting the mixture to pulverizing and mixing in the nonoxidative atmosphere then to molding under pressurization followed by cutting and finishing. These material are mixed at ratios of 60-100% tellurium, <=30% selenium and <=20% >=1 kinds of metals such as titanium, silver, arsenic and lead. The uniform compsn. approximately equal to the theoretical density is thus obtd. by pulverizing and mixing. The inter- particle binding power is increased by the improvement of sinterability, by which the sputtering conditions are stabilized. The productivity is improved by the continuous sputtering.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、画像ファイルや文書ファイル及びコード情報
ファイルなどの追記型(DRAW;direct  r
ead  after  write)の光記録用ディ
スクのスパッタリング用成膜原料となるターゲットの製
造方法に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to write-once (DRAW) data such as image files, document files, and code information files.
The present invention relates to a method for producing a target that is a raw material for sputtering an optical recording disk (ead after write).

[従来の技術] 光デイスクメモリーの特徴は、第一に記憶容量の大きさ
にある。磁気ディスクやVTRに比べ単位面積当たりの
記録密度は、実用システムで考えた場合、少なくとも1
0倍かそれ以上と高い。最近では、垂直磁化膜の開発に
より大容量の磁気記録メモリーの出現が期待されている
が、磁気記録方式では記録読みだし時にヘッドとディス
クとのタッチアンドランによる摩耗損傷が避けられず、
寿命の問題をかかえている。
[Prior Art] The first characteristic of optical disk memory is its large storage capacity. Compared to magnetic disks and VTRs, the recording density per unit area is at least 1
It is as high as 0 times or more. Recently, high-capacity magnetic recording memory is expected to emerge due to the development of perpendicular magnetization films, but with magnetic recording methods, wear and tear due to touch and run between the head and the disk cannot be avoided when reading records.
I am facing a lifespan problem.

これに対し光の場合は波長とレンズの開口により制限は
受けるものの、レーザーを使用することにより、およそ
直径1μm以下の微小スポットを形成出来るため高いポ
テンシャルを持っている。
On the other hand, in the case of light, although it is limited by the wavelength and the aperture of the lens, it has a high potential because it is possible to form a minute spot with a diameter of about 1 μm or less by using a laser.

第二の特徴として非接触で記録再生が可能であるという
ことである。これにより、ディスク及びハードウェアの
摩耗損傷がなく寿命が長くなるとともにその信頼性も高
い。
The second feature is that recording and playback can be performed without contact. As a result, there is no wear and tear on the disk and hardware, resulting in a longer lifespan and higher reliability.

光デイスクメモリーのうち再生専用型(ROM:rea
d  only  memory  )のものは光ビデ
オディスクやコンパクトディスクとして広く普及してき
ており、今回の発明の中心をなす追記型の静止画ディス
クファイルや文書ファイル等も一部実用化されている。
Among optical disk memories, read-only (ROM: rea)
d only memory) have become widely used as optical video discs and compact discs, and some of the write-once type still image disc files and document files that form the core of this invention have also been put into practical use.

従来光ディスクの製造は、蒸着法または複合ターゲット
(数種の金属をモザイク状に組み合せたもの、もしくは
一種金属の上に他の金属を乗せたものを言う。)による
スパッタリング法、あるいは単一金属で構成されたター
ゲットを複数個用いる多元スパッタリング法等がもちい
られてきた。
Traditionally, optical disks have been manufactured using vapor deposition methods, sputtering methods using a composite target (a combination of several metals in a mosaic pattern, or one metal on top of another), or a sputtering method using a single metal. Multidimensional sputtering methods using a plurality of configured targets have been used.

これは膜組成の検討や、単一金属の方が従来の合金ター
ゲットに比べ高純度のものが得られる為であるが、一方
で装置構成の複雑さ、連続的な膜組成のコントロールの
難しさのため連続化が困難で生産性が低く、コストが高
いという欠点があった。
This is due to the consideration of film composition and the fact that a single metal can provide a higher purity target than conventional alloy targets, but on the other hand, the complexity of the equipment configuration and the difficulty of continuously controlling the film composition Therefore, there were drawbacks such as difficulty in continuous production, low productivity, and high cost.

[発明が解決しようとしている問題点]本発明は上述の
ような従来の技術で難しかった、連続的に膜組成のコン
トロールが可能なスパッタリングを可能とする、均一組
成で且つ大型の高生産性がはかれる合金ターゲットの製
造方法を提供するものである。
[Problems to be solved by the invention] The present invention enables sputtering that enables continuous control of the film composition, which was difficult with the conventional techniques as described above, and enables a large-scale, high-productivity film with a uniform composition. The present invention provides a method for manufacturing an alloy target that can be measured.

[問題点を解決する為の手段] 本発明は、セレン、チタン、銀、ひ素、鉛、アンチモン
、およびインジウムからなる群より選ばれた一種以上の
金属をテルルまたはテルル合金と混合し、真空下または
アルゴン、窒素、ヘリウムなどの不活性ガス雰囲気下で
加熱反応させ、テルライドとし、非酸化雰囲気下たとえ
ば有機溶媒中で微粉砕混合し、得られた微粉末混合物を
、直接ホットプレスするか、または冷間静水圧プレス(
CI P)により、圧粉体とし、更にホットプレスし、
実質的に均一組成でほぼ理論密度に等しい成型体とする
ことを特徴とする光記録用スパッタリングターゲットの
製造方法を提供するものである。
[Means for Solving the Problems] The present invention involves mixing one or more metals selected from the group consisting of selenium, titanium, silver, arsenic, lead, antimony, and indium with tellurium or a tellurium alloy, and mixing the mixture with tellurium or a tellurium alloy under vacuum. Alternatively, a heating reaction is performed under an inert gas atmosphere such as argon, nitrogen, helium, etc. to form telluride, which is then pulverized and mixed under a non-oxidizing atmosphere, for example in an organic solvent, and the resulting fine powder mixture is directly hot-pressed; Cold isostatic press (
CI P) to form a green compact, further hot press,
The present invention provides a method for manufacturing a sputtering target for optical recording, which is characterized by forming a molded body having a substantially uniform composition and approximately the same theoretical density.

本発明において、各元素の混合割合は、一般にテルルが
60at%以上100at%未満、セレンが0〜30a
t%、その他のチタン、銀、ひ素、鉛。
In the present invention, the mixing ratio of each element is generally 60 at% or more but less than 100 at% for tellurium and 0 to 30 at% for selenium.
t%, other titanium, silver, arsenic, lead.

アンチモンおよびインジウムからなる群より選ばれた一
種以上の金属がθ〜20at%が採用される。
One or more metals selected from the group consisting of antimony and indium are used in an amount of θ to 20 at %.

次に本発明のターゲットの製造方法について説明する。Next, a method for manufacturing a target according to the present invention will be explained.

まずセレン、チタン、銀、ひ素、鉛、アンチモンおよび
インジウムからなる群より選ばれた一種以上の金属にテ
ルルまたはテルル合金を加え、真空下またはアルゴン、
窒素、ヘリウム等の不活性ガス雰囲気下、約350〜1
100℃で加熱反応を行なう。次いでこれを冷却し、テ
ルライドを得る。ここで、加熱反応後の冷却方法として
は、急冷が好ましい。これは、アモルファスもしくは微
細結晶の方が、スパッタリングに好影響を及ぼすと考え
られる為である。得られたテルライドを非酸化雰囲気下
、例えば有機溶媒中で微粉砕混合し、得られた微粉末混
合物(平均粒径:1〜100μm−好ましくは2〜20
μm)を、混練機で十分に混合し、冷間静水圧プレス(
CI P)で1〜5ton /d、好ましくは3〜5t
on/c−に加圧し圧粉体を得た後に所定のサイズのホ
ットプレス用インゴットとする。粉末のままホットプレ
スする場合は、その粉末を乾燥させ均一に混合し原料と
する。ここで用いるテルル粉末等の原料粉末の粒径は2
00μm以下のものが一般的に用いられる。
First, tellurium or a tellurium alloy is added to one or more metals selected from the group consisting of selenium, titanium, silver, arsenic, lead, antimony, and indium.
Under an inert gas atmosphere such as nitrogen or helium, approximately 350 to 1
The heating reaction is carried out at 100°C. This is then cooled to obtain telluride. Here, as a cooling method after the heating reaction, rapid cooling is preferable. This is because it is thought that amorphous or fine crystals have a better effect on sputtering. The obtained telluride is finely pulverized and mixed in a non-oxidizing atmosphere, for example, an organic solvent, and the obtained fine powder mixture (average particle size: 1 to 100 μm - preferably 2 to 20
μm) thoroughly mixed with a kneader, and then cold isostatically pressed (
CI P) from 1 to 5 tons/d, preferably from 3 to 5 tons
After pressurizing on/c- to obtain a green compact, it is made into an ingot for hot pressing of a predetermined size. When hot pressing the powder, the powder is dried and mixed uniformly to form the raw material. The particle size of the raw material powder such as tellurium powder used here is 2
00 μm or less is generally used.

これをホットプレスを用い300〜450℃、好ましく
は300〜400℃、不活性ガス雰囲気下で10kg/
c−以上、好ましくは75〜200kg/C−の圧力で
加熱加圧し成形体を得る。
This is heated using a hot press at 300 to 450°C, preferably 300 to 400°C, in an inert gas atmosphere at 10 kg/kg.
A molded article is obtained by heating and pressing at a pressure of c- or more, preferably 75 to 200 kg/c-.

この成形体をワイヤー放電加工機、バンドソーなどの切
断加工機にて切断、仕上加工を行い所定の形状の光記録
用スパッタリングターゲットとする。
This molded body is cut and finished using a cutting machine such as a wire electric discharge machine or a band saw to obtain a sputtering target for optical recording in a predetermined shape.

[発明の効果] このようにして得られたターゲットは実質的に均一組成
であり、はぼ理論密度に等しいものである。また、焼結
性が向上し、粒子間の結合力が高くなったものである。
[Effects of the Invention] The target thus obtained has a substantially uniform composition and has approximately the same theoretical density. Furthermore, the sinterability is improved and the bonding force between particles is increased.

本発明により得られた光記録用ターゲットはスパッタリ
ングにより成膜され光ディスクとされる。
The optical recording target obtained according to the present invention is formed into a film by sputtering to form an optical disc.

この場合、従来の複合ターゲット(モザイク状)。In this case, a conventional composite target (mosaic-like).

単一金属にその他の金属のチップを乗せただけのターゲ
ットより成膜して得た光ディスクに比べ次の様な利点が
ある。(1)ターゲットと同一組成の膜が得られスパッ
タリング条件が安定化する。
It has the following advantages compared to an optical disk obtained by forming a film from a target consisting of a single metal and chips of other metals. (1) A film having the same composition as the target is obtained and the sputtering conditions are stabilized.

(2)連続スパッタリングが可能となり、生産性の向上
が期待されコストダウンが図れる。
(2) Continuous sputtering becomes possible, improving productivity and reducing costs.

[実施例] 以下本発明を実施例により説明する。本発明はこれらの
実施例により同等制限されるものではない。
[Examples] The present invention will be explained below using examples. The present invention is not equally limited by these examples.

実施例1 高周波誘導溶解炉にて、30kgの鋳塊を得るため、T
e  85.38vt%、  Se  14. 62v
t%の割合でアルゴンガス600關11g、450〜5
00℃で溶解しこの溶湯を、アルゴンガス雰囲気下でカ
ーボン鋳型に鋳造し、得られた鋳塊をクラッシャーを用
いて粗砕し、平均粒径200μmの合金粉末を得た。
Example 1 In order to obtain a 30 kg ingot in a high frequency induction melting furnace, T
e 85.38vt%, Se 14. 62v
Argon gas 600 to 11 g at a rate of t%, 450 to 5
The molten metal was melted at 00° C. and cast into a carbon mold under an argon gas atmosphere, and the resulting ingot was crushed using a crusher to obtain alloy powder with an average particle size of 200 μm.

一方、Te  84.2wt%、Ti  15.8vt
%の割合で石英封管中、900〜1000℃で5h加熱
反応させて、得られた生成物をアルゴン雰囲気で粉砕し
、平均粒径100μmのテルライド粉末、1kgを得た
On the other hand, Te 84.2wt%, Ti 15.8vt
% in a quartz sealed tube at 900 to 1000° C. for 5 hours, and the resulting product was pulverized in an argon atmosphere to obtain 1 kg of telluride powder with an average particle size of 100 μm.

こうして得た両テルライド粉末を、Te−3e68.4
vt%、Te−Ti  31.6vt%の割合でボール
ミルを用いてシクロヘキサン中で60分間微粉砕混合し
、十分乾燥し、ホットプレス用原料粉末(Te  85
.  Se  10. Ti  5 (at%))を得
た。 これを直径152.4+uφ、高さ50+mの黒
鉛型に充填し、アルゴン雰囲気、4OO℃、  200
 kg/c−で加熱加圧し、成型体(H。
Both telluride powders obtained in this way were Te-3e68.4
vt%, Te-Ti 31.6vt%, were pulverized and mixed in cyclohexane for 60 minutes using a ball mill, thoroughly dried, and a raw material powder for hot pressing (Te-Ti 85
.. Se 10. Ti 5 (at%)) was obtained. This was filled into a graphite mold with a diameter of 152.4+uφ and a height of 50+m, and heated in an argon atmosphere at 400°C at 200°C.
Heated and pressurized at kg/c- to form a molded body (H.

P、成型体)を得た。P, molded body) was obtained.

この成型体をワイヤー放電加工機にて切断加工し、15
2.4mmφX5m1ltのターゲットを製造した。こ
うして得られたターゲットは、表1に示す通り、理論密
度に近いものであった。
This molded body was cut using a wire electrical discharge machine, and 15
A target with a diameter of 2.4 mm and a diameter of 5 ml was manufactured. As shown in Table 1, the target thus obtained had a density close to the theoretical density.

実施例2 Te−8eに関しては、実施例1と同じ条件でTe  
78.lvt%、Se  21.9wt%の割合で製造
した。
Example 2 Regarding Te-8e, Te-8e was prepared under the same conditions as Example 1.
78. lvt% and Se at a ratio of 21.9wt%.

一方、Te  81.6wt%、Ti9.2wt%。On the other hand, Te was 81.6 wt% and Ti was 9.2 wt%.

Pb9.2Vt%の割合で石英封管中、900〜100
0℃で5h加熱反応させ、得られた生成物をアルゴン雰
囲気で粉砕し、平均粒径100μmのテルライド粉末、
2kgを得た。 こうして得た両テルライド粉末を、T
e−8e  45.7wt%。
900 to 100 Pb in a quartz sealed tube at a ratio of 9.2 Vt%
The reaction was heated at 0°C for 5 hours, and the resulting product was ground in an argon atmosphere to obtain telluride powder with an average particle size of 100 μm.
I got 2 kg. Both telluride powders obtained in this way were
e-8e 45.7wt%.

Te−Ti−Pb  54.3wt%の割合でボールミ
ルを用いてシクロヘキサン中で60分間微粉砕混合し、
十分乾燥し、ホットプレス用原料粉末(Te   80
.Se   10.Tl   5.Pb   5(at
%))を得た。
Te-Ti-Pb was pulverized and mixed for 60 minutes in cyclohexane using a ball mill at a ratio of 54.3 wt%,
Thoroughly dry, hot press raw material powder (Te 80
.. Se 10. Tl 5. Pb5(at
%)) was obtained.

得られた粉末をゴム型につめ、冷間静水圧プレス(CI
 P)を用いて、5ton/c−で加圧成型した。つい
で得られた圧粉体を、21 G+a■ ×210關 ×
20−■t に加工し、十分乾燥したのち、ホットプレスを用い、ア
ルゴン雰囲気、420℃、  150kg/c−で加熱
加圧し、成型体(H,P、成型体)を得た。
The obtained powder was packed into a rubber mold and cold isostatically pressed (CI).
Pressure molding was performed using P) at 5 tons/c-. Then, the obtained green compact was heated to 21 G+a×210×
After being processed to a size of 20-■t and sufficiently dried, it was heated and pressed using a hot press at 420° C. and 150 kg/c- in an argon atmosphere to obtain molded bodies (H, P, molded bodies).

この成型体をワイヤー放電加工機にて切断加工し、21
01識 X210m鵬 ×5IIIItのターゲットを
製造した。こうして得られたターゲットは、表1に示す
通り、理論密度に近いものであった。
This molded body was cut using a wire electrical discharge machine, and
A target of 01 knowledge x 210m x 5IIIt was manufactured. As shown in Table 1, the target thus obtained had a density close to the theoretical density.

表−1ホットプレス成型体の密度 [単位:g/a/1]Table-1 Density of hot press molded body [Unit: g/a/1]

Claims (1)

【特許請求の範囲】 1)セレン、チタン、銀、ひ素、鉛、アンチモン、およ
びインジウムからなる群より選ばれた一種以上の金属を
テルルまたはテルル合金と混合し、真空下またはアルゴ
ン、窒素、ヘリウムなどの不活性ガス雰囲気下で加熱反
応させ、テルライドとし、非酸化雰囲気下で微粉砕し、
得られた微粉末を、直接ホットプレスするか、または冷
間静水圧プレス(CIP)により、圧粉体とし、更にホ
ットプレスし、実質的に均一組成でほぼ理論密度に等し
い成型体とすることを特徴とする光記録用スパッタリン
グターゲットの製造方法。 2)数種のテルライドを、非酸化雰囲気下で微粉砕混合
する、特許請求の範囲第(1)項に記載の製造方法。 3)テルライドを有機溶媒中で、平均粒径0.5〜50
μmに粉砕混合する、特許請求の範囲第(1)項または
第(2)項に記載の製造方法。
[Claims] 1) One or more metals selected from the group consisting of selenium, titanium, silver, arsenic, lead, antimony, and indium are mixed with tellurium or a tellurium alloy, and the mixture is heated under vacuum or with argon, nitrogen, or helium. A heating reaction is carried out under an inert gas atmosphere such as to form telluride, which is then finely pulverized under a non-oxidizing atmosphere.
The obtained fine powder is directly hot-pressed or cold isostatically pressed (CIP) to form a green compact, which is further hot-pressed to form a molded body with a substantially uniform composition and approximately the same theoretical density. A method for producing a sputtering target for optical recording, characterized by: 2) The manufacturing method according to claim (1), in which several types of telluride are pulverized and mixed in a non-oxidizing atmosphere. 3) Telluride in an organic solvent with an average particle size of 0.5 to 50
The manufacturing method according to claim (1) or (2), wherein the manufacturing method is pulverized and mixed to a particle size of μm.
JP25291085A 1985-11-13 1985-11-13 Production of sputtering target for optical recording Pending JPS62114137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25291085A JPS62114137A (en) 1985-11-13 1985-11-13 Production of sputtering target for optical recording

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25291085A JPS62114137A (en) 1985-11-13 1985-11-13 Production of sputtering target for optical recording

Publications (1)

Publication Number Publication Date
JPS62114137A true JPS62114137A (en) 1987-05-25

Family

ID=17243868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25291085A Pending JPS62114137A (en) 1985-11-13 1985-11-13 Production of sputtering target for optical recording

Country Status (1)

Country Link
JP (1) JPS62114137A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6462466A (en) * 1987-09-03 1989-03-08 Matsushita Electric Ind Co Ltd Sputtering target for forming information recording thin film and production thereof
JPH0436463A (en) * 1990-06-01 1992-02-06 Matsushita Electric Ind Co Ltd Sputtering target and its production
JPH0547053A (en) * 1991-08-09 1993-02-26 Dowa Mining Co Ltd High-purity target for production of optical recording film and production thereof
WO2003071531A1 (en) * 2002-02-25 2003-08-28 Nikko Materials Company, Limited Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
CN112125670A (en) * 2020-09-04 2020-12-25 先导薄膜材料(广东)有限公司 Arsenic telluride target and preparation method thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6462466A (en) * 1987-09-03 1989-03-08 Matsushita Electric Ind Co Ltd Sputtering target for forming information recording thin film and production thereof
JPH0436463A (en) * 1990-06-01 1992-02-06 Matsushita Electric Ind Co Ltd Sputtering target and its production
JPH0547053A (en) * 1991-08-09 1993-02-26 Dowa Mining Co Ltd High-purity target for production of optical recording film and production thereof
WO2003071531A1 (en) * 2002-02-25 2003-08-28 Nikko Materials Company, Limited Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
US7156964B2 (en) 2002-02-25 2007-01-02 Nippon Mining & Metals Co., Ltd. Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
CN100369141C (en) * 2002-02-25 2008-02-13 日矿金属株式会社 Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
US7484546B2 (en) 2002-02-25 2009-02-03 Nippon Mining & Metals Co., Ltd. Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
JP2010003402A (en) * 2002-02-25 2010-01-07 Nippon Mining & Metals Co Ltd Sputtering target for phase change memory, film for phase change memory formed by using the target, and method for producing the target
CN112125670A (en) * 2020-09-04 2020-12-25 先导薄膜材料(广东)有限公司 Arsenic telluride target and preparation method thereof

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