JPS6462466A - Sputtering target for forming information recording thin film and production thereof - Google Patents

Sputtering target for forming information recording thin film and production thereof

Info

Publication number
JPS6462466A
JPS6462466A JP62220738A JP22073887A JPS6462466A JP S6462466 A JPS6462466 A JP S6462466A JP 62220738 A JP62220738 A JP 62220738A JP 22073887 A JP22073887 A JP 22073887A JP S6462466 A JPS6462466 A JP S6462466A
Authority
JP
Japan
Prior art keywords
mixture
sputtering target
information recording
thin film
ground
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62220738A
Other languages
Japanese (ja)
Other versions
JP2769153B2 (en
Inventor
Koichi Kodera
Tetsuya Akiyama
Takeo Ota
Masami Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62220738A priority Critical patent/JP2769153B2/en
Publication of JPS6462466A publication Critical patent/JPS6462466A/en
Application granted granted Critical
Publication of JP2769153B2 publication Critical patent/JP2769153B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Abstract

PURPOSE:To obtain a titled sputtering target with which a desired composition of a thin Te-Ge-Sb film is easily obtainable by forming a uniformly ground mixture consisting of at least Te, Ge and Sb by hot pressing, etc., to an alloy state, then subjecting the mixture to grinding, mixing and further to hot pressing. CONSTITUTION:The metal groups consisting of at least Te, Ge and Sb are ground and mixed by a ball mill to form the uniform mixture. This mixture is hot pressed in an inert gaseous atmosphere of N2, etc., or is heated and melted in a reduced pressure atmosphere or inert gaseous atmosphere and is thereby made into the alloy state. This mixture is cooled. The treated matter in the alloy state is ground, mixed and hot pressed to form a molding and the desired sputtering target for forming information recording thin film is obtd. The contents of the respective elements constituting the target are preferably 40-70at.% Te, 5-25at.% Ge, and 20-45at.% Sb.
JP62220738A 1987-09-03 1987-09-03 Sputtering target for forming information recording thin film Expired - Fee Related JP2769153B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62220738A JP2769153B2 (en) 1987-09-03 1987-09-03 Sputtering target for forming information recording thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62220738A JP2769153B2 (en) 1987-09-03 1987-09-03 Sputtering target for forming information recording thin film

Publications (2)

Publication Number Publication Date
JPS6462466A true JPS6462466A (en) 1989-03-08
JP2769153B2 JP2769153B2 (en) 1998-06-25

Family

ID=16755754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62220738A Expired - Fee Related JP2769153B2 (en) 1987-09-03 1987-09-03 Sputtering target for forming information recording thin film

Country Status (1)

Country Link
JP (1) JP2769153B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0436463A (en) * 1990-06-01 1992-02-06 Matsushita Electric Ind Co Ltd Sputtering target and its production
US6033535A (en) * 1990-08-28 2000-03-07 Matsushita Electric Industrial Co., Ltd. Optical information recording disk and method for manufacturing the same
EP1480209A1 (en) * 2002-02-25 2004-11-24 Nikko Materials Company, Limited Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
KR100599396B1 (en) * 2004-08-31 2006-07-10 한양대학교 산학협력단 A method of manufacturing a Ge-Sb-Te sputtering target with a high density
JP2007131941A (en) * 2006-05-26 2007-05-31 Mitsubishi Materials Corp Method for producing sputtering target for forming phase change film having reduced generation of particle

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7488526B2 (en) 2005-11-22 2009-02-10 Ricoh Company, Ltd. Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621146A (en) * 1985-06-27 1987-01-07 Toyo Soda Mfg Co Ltd Sputtering target for optical recording and its production
JPS6253886A (en) * 1984-12-26 1987-03-09 Asahi Chem Ind Co Ltd Information-recording medium
JPS62114137A (en) * 1985-11-13 1987-05-25 Toyo Soda Mfg Co Ltd Production of sputtering target for optical recording

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6253886A (en) * 1984-12-26 1987-03-09 Asahi Chem Ind Co Ltd Information-recording medium
JPS621146A (en) * 1985-06-27 1987-01-07 Toyo Soda Mfg Co Ltd Sputtering target for optical recording and its production
JPS62114137A (en) * 1985-11-13 1987-05-25 Toyo Soda Mfg Co Ltd Production of sputtering target for optical recording

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0436463A (en) * 1990-06-01 1992-02-06 Matsushita Electric Ind Co Ltd Sputtering target and its production
US6033535A (en) * 1990-08-28 2000-03-07 Matsushita Electric Industrial Co., Ltd. Optical information recording disk and method for manufacturing the same
EP1480209A1 (en) * 2002-02-25 2004-11-24 Nikko Materials Company, Limited Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
JP2010003402A (en) * 2002-02-25 2010-01-07 Nippon Mining & Metals Co Ltd Sputtering target for phase change memory, film for phase change memory formed by using the target, and method for producing the target
KR100599396B1 (en) * 2004-08-31 2006-07-10 한양대학교 산학협력단 A method of manufacturing a Ge-Sb-Te sputtering target with a high density
JP2007131941A (en) * 2006-05-26 2007-05-31 Mitsubishi Materials Corp Method for producing sputtering target for forming phase change film having reduced generation of particle

Also Published As

Publication number Publication date
JP2769153B2 (en) 1998-06-25

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees