JPS6487769A - Manufacture of sputtering target material for forming ta-si-o thin resistance film - Google Patents

Manufacture of sputtering target material for forming ta-si-o thin resistance film

Info

Publication number
JPS6487769A
JPS6487769A JP24491387A JP24491387A JPS6487769A JP S6487769 A JPS6487769 A JP S6487769A JP 24491387 A JP24491387 A JP 24491387A JP 24491387 A JP24491387 A JP 24491387A JP S6487769 A JPS6487769 A JP S6487769A
Authority
JP
Japan
Prior art keywords
compound
powdered
target material
sintering
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24491387A
Other languages
Japanese (ja)
Inventor
Masashi Komabayashi
Tadashi Sugihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP24491387A priority Critical patent/JPS6487769A/en
Publication of JPS6487769A publication Critical patent/JPS6487769A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To improve the uniformity of a target material, by sintering a powder having a grain structure in which Ta-Si-O compound layer is formed on the surface of Ta-Si compound. CONSTITUTION:Powdered Ta and powdered Si are mixed by using a plastic ball mill, and the resulting powder mixture is put into an Mo vessel, which is subjected to temp. rise in vacuum or in an Ar atmosphere up to >=1,250 deg.C so as to be formed into a Ta-Si compound. Subsequently, this sintered compact is crushed and then pulverized by means of a ball mill, and the resulting powdered Ta-Si compound is placed into an alumina vessel and oxidized at >=550 deg.C. As a result, a darkish gray pulverized powder, which is the powdered Ta-Si compound having Ta-Si-O compound layer on the surface, can be obtained. This pulverized powder is used in this state as a powdered raw material for sintering and compacted by hot pressing, by which the titled target excellent in uniformity can be obtained with superior sintering characteristics.
JP24491387A 1987-09-29 1987-09-29 Manufacture of sputtering target material for forming ta-si-o thin resistance film Pending JPS6487769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24491387A JPS6487769A (en) 1987-09-29 1987-09-29 Manufacture of sputtering target material for forming ta-si-o thin resistance film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24491387A JPS6487769A (en) 1987-09-29 1987-09-29 Manufacture of sputtering target material for forming ta-si-o thin resistance film

Publications (1)

Publication Number Publication Date
JPS6487769A true JPS6487769A (en) 1989-03-31

Family

ID=17125833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24491387A Pending JPS6487769A (en) 1987-09-29 1987-09-29 Manufacture of sputtering target material for forming ta-si-o thin resistance film

Country Status (1)

Country Link
JP (1) JPS6487769A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103060762A (en) * 2013-01-11 2013-04-24 江西科泰新材料有限公司 Production process of molybdenum niobium alloy target
JP2016017225A (en) * 2014-07-11 2016-02-01 三菱マテリアル株式会社 SPUTTERING TARGET FOR FORMING Ta-Si-O-BASED THIN FILM

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103060762A (en) * 2013-01-11 2013-04-24 江西科泰新材料有限公司 Production process of molybdenum niobium alloy target
JP2016017225A (en) * 2014-07-11 2016-02-01 三菱マテリアル株式会社 SPUTTERING TARGET FOR FORMING Ta-Si-O-BASED THIN FILM

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