JPS62114136A - Production of sputtering target for optical recording - Google Patents

Production of sputtering target for optical recording

Info

Publication number
JPS62114136A
JPS62114136A JP25290985A JP25290985A JPS62114136A JP S62114136 A JPS62114136 A JP S62114136A JP 25290985 A JP25290985 A JP 25290985A JP 25290985 A JP25290985 A JP 25290985A JP S62114136 A JPS62114136 A JP S62114136A
Authority
JP
Japan
Prior art keywords
tellurium
mixture
alloy
mixed
selenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25290985A
Other languages
Japanese (ja)
Inventor
Tetsushi Iwamoto
哲志 岩元
Akiyoshi Kato
加藤 明美
Masaru Kawakami
勝 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Toyo Soda Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Soda Manufacturing Co Ltd filed Critical Toyo Soda Manufacturing Co Ltd
Priority to JP25290985A priority Critical patent/JPS62114136A/en
Publication of JPS62114136A publication Critical patent/JPS62114136A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Abstract

PURPOSE:To stabilize sputtering conditions with a uniform compsn. having a high density and to improve productivity by mixing titanium, etc., with selenium, bringing the same into reaction by heating in a vacuum or inert gaseous atmosphere, adding tellurium to the mixture and pulverizing the mixture then molding the powder under pressurization. CONSTITUTION:The sputtering target for optical recording is obtd. by mixing >=1 kinds of metals such as titanium and silver with a selenium alloy, bringing the mixture into reaction by heating in the vacuum or inert gaseous atmosphere, adding a tellurium alloy to the mixture, pulverizing and mixing the same in the nonoxidative atmosphere and subjecting the mixture to molding under pressurization then to cutting and finishing. These materials are mixed at ratios of 60-100% tellurium, <=30% selenium and <=20% >=1 kinds of metals such as titanium, silver, arsenic and lead. The uniform compsn. approximately equal to the theoretical density is thus obtd. by pulverizing and mixing. The inter- particle binding power is increased by the improvement of sinterability, by which the sputtering conditions are stabilized. The productivity is improved by the continuous sputtering.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、画像ファイルや文書ファイル及びコード情報
ファイルなどの追記型(DRAW:direct  r
ead  after  write  )ゝの光記録
用ディスクのスパッタリング用成膜原料となるターゲッ
トの製造方法に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to write-once type (DRAW: direct r.
The present invention relates to a method for manufacturing a target that is a raw material for sputtering an optical recording disk (read after write).

[従来の技術] 光デイスクメモリーの特徴は、第一に記憶容量の大きさ
にある。磁気ディスクやVTRに比べ単位面積当たりの
記録密度は、実用システムで考えた場合、少なくとも1
0倍かそれ以上と高い。最近では、垂直磁化膜の開発に
より大容量の磁気記録メモリーの出現が期待されている
が、磁気記録方式では記録読みだし時にヘッドとディス
クとのタッチアンドランによる摩耗損傷が避けられず、
寿命の問題をかかえている。
[Prior Art] The first characteristic of optical disk memory is its large storage capacity. Compared to magnetic disks and VTRs, the recording density per unit area is at least 1
It is as high as 0 times or more. Recently, high-capacity magnetic recording memory is expected to emerge due to the development of perpendicular magnetization films, but with magnetic recording methods, wear and tear due to touch and run between the head and the disk cannot be avoided when reading records.
I am facing a lifespan problem.

これに対し光の場合は波長とレンズの開口により制限は
受けるものの、レーザーを使用することにより、およそ
直径1μm以下の微小スポットを形成出来るため高いポ
テンシャルを持っている。
On the other hand, in the case of light, although it is limited by the wavelength and the aperture of the lens, it has a high potential because it is possible to form a minute spot with a diameter of about 1 μm or less by using a laser.

第二の特徴として非接触で記録再生が可能であるという
ことである。これにより、ディスク及びハードウェアの
摩耗損傷がなく寿命が長くなるとともにその信頼性も高
い。
The second feature is that recording and playback can be performed without contact. As a result, there is no wear and tear on the disk and hardware, resulting in a longer lifespan and higher reliability.

光デイスクメモリーのうち再生専用型(ROM;rea
d  only  memory  )のものは光ビデ
オディスクやコンパクトディスクとして広く普及してき
ており、今回の発明の中心をなす追記型の静止画ディス
クファイルや文書ファイル等も一部実用化されている。
Among optical disk memories, read-only (ROM; rea)
d only memory) have become widely used as optical video discs and compact discs, and some of the write-once type still image disc files and document files that form the core of this invention have also been put into practical use.

従来光ディスクの製造は、蒸着法または複合ターゲット
(数種の金属をモザイク状に組み合せたもの、もしくは
一種金属の上に他の金属を乗せたものを言う。)による
スパッタリング法、あるいは単一金属で構成されたター
ゲットを複数個用いる多元スパッタリング法等がもちい
られてきた。
Traditionally, optical disks have been manufactured using vapor deposition methods, sputtering methods using a composite target (a combination of several metals in a mosaic pattern, or one metal on top of another), or a sputtering method using a single metal. Multidimensional sputtering methods using a plurality of configured targets have been used.

これは膜組成の検討や、単一金属の方が従来の合金ター
ゲットに比べ高純度のものが得られる為であるが、一方
で装置構成の複雑さ、連続的な膜組成のコントロールの
難しさのため連続化が困難で生産性が低く、コストが高
いという欠点があった。
This is due to the consideration of film composition and the fact that a single metal can provide a higher purity target than conventional alloy targets, but on the other hand, the complexity of the equipment configuration and the difficulty of continuously controlling the film composition Therefore, there were drawbacks such as difficulty in continuous production, low productivity, and high cost.

[発明が解決しようとしている問題点]本発明は上述の
ような従来の技術で難しかった、連続的に膜組成のコン
トロールが可能なスパッタリングを可能とする、均一組
成で且つ大型の高生産性がはかれる合金ターゲットの製
造方法を提供するものである。
[Problems to be solved by the invention] The present invention enables sputtering that enables continuous control of the film composition, which was difficult with the conventional techniques as described above, and enables a large-scale, high-productivity film with a uniform composition. The present invention provides a method for manufacturing an alloy target that can be measured.

[問題点を解決する為の手段] 本発明は、チタン、銀、ひ素、鉛、アンチモン及びイン
ジウムからなる群より選ばれた一種以上の金属をセレン
、またはセレン合金と混合し、真空下またはアルゴン、
窒素、ヘリウムなどの不活性ガス雰囲気下で加熱反応さ
せ、セレナイドとし、これにテルルまたはテルル合金を
加え、非酸化雰囲気下例えば有機溶媒中で微粉砕混合し
、得られた微粉末混合物を、直接ホットプレスするか、
または冷間静水圧プレス(CI P)により、圧粉体と
し、更にホットプレスし、実質的に均一組成でほぼ理論
密度に等しい成型体とすることを特徴とする光記録用ス
パッタリングターゲットの製造方法を提供するものであ
る。
[Means for Solving the Problems] The present invention involves mixing one or more metals selected from the group consisting of titanium, silver, arsenic, lead, antimony, and indium with selenium or a selenium alloy, and then heating the mixture under vacuum or argon. ,
A heating reaction is carried out under an inert gas atmosphere such as nitrogen or helium to form selenide. Tellurium or a tellurium alloy is added to this, and the resulting fine powder mixture is pulverized and mixed in a non-oxidizing atmosphere, for example in an organic solvent. Hot press or
Or, a method for producing a sputtering target for optical recording, characterized by forming a green compact by cold isostatic pressing (CI P), followed by hot pressing to obtain a compact having a substantially uniform composition and approximately the same theoretical density. It provides:

本発明において、各元素の混合割合は、一般にテルルが
60at%以上100at%未満、セレンが30at%
以下、その他のチタン、銀、ひ素、鉛。
In the present invention, the mixing ratio of each element is generally 60 at% or more but less than 100 at% for tellurium and 30 at% for selenium.
Other titanium, silver, arsenic, and lead are listed below.

アンチモン及びインジウムからなる群より選ばれた一種
以上の金属が20at%以下が採用される。
20 at % or less of one or more metals selected from the group consisting of antimony and indium is employed.

次に本発明のターゲットの製造方法について説明する。Next, a method for manufacturing a target according to the present invention will be explained.

まずチタン、銀、ひ素、鉛、アンチモン及びインジウム
からなる群より選ばれた一種以上の金属にセレンまたは
セレン合金を加え、真空下またはアルゴン、窒素、ヘリ
ウム等の不活性ガス雰囲気下、約350〜1100℃で
加熱反応を行なう。
First, selenium or a selenium alloy is added to one or more metals selected from the group consisting of titanium, silver, arsenic, lead, antimony, and indium, and the mixture is heated under vacuum or in an inert gas atmosphere such as argon, nitrogen, helium, etc. The heating reaction is carried out at 1100°C.

次いでこれを冷却し、セレナイドを得る。ここで、加熱
反応後の冷却方法としては、急冷が好ましい。
This is then cooled to obtain selenide. Here, as a cooling method after the heating reaction, rapid cooling is preferable.

これは、アモルファスもしくは微細結晶の方が、スパッ
タリングに好影響をおよぼすと考えられる為である。
This is because it is thought that amorphous or fine crystals have a better effect on sputtering.

得られたセレナイドにテルルまたはテルル合金を加え、
非酸化雰囲気下、例えば有機溶媒中で微粉砕混合し、得
られた微粉末混合物(平均粒径:1〜100μm−好ま
しくは2〜20μm)を、混練機で十分に混合し、冷間
静水圧プレス(CIP)で1〜5 ton /cJ、好
ましくは3〜5ton/C−に加圧し圧粉を得た後に所
定のサイズのホットプレス用インゴットとする。粉末の
ままホットプレスする場合は、その粉末を乾燥させ均一
に混合し原料とする。ここで用いるテルル粉末等の原料
粉末の粒径は200μm以下のものが一般的に用いられ
る。これをホットプレスを用い300〜450℃、好ま
しくは300〜400℃、不活性ガス雰囲気下で10k
g/c+を以上、好ましくは75〜200kg/e−の
圧力で加熱加圧し成形体を得る。
Add tellurium or tellurium alloy to the obtained selenide,
The resulting fine powder mixture (average particle size: 1 to 100 μm - preferably 2 to 20 μm) is thoroughly mixed in a kneader and subjected to cold isostatic pressure. After pressing (CIP) to 1 to 5 ton/cJ, preferably 3 to 5 ton/C- to obtain a green compact, it is made into a hot press ingot of a predetermined size. When hot pressing the powder, the powder is dried and mixed uniformly to form the raw material. The particle size of the raw material powder such as tellurium powder used here is generally 200 μm or less. This is heated for 10k using a hot press at 300-450℃, preferably 300-400℃ under an inert gas atmosphere.
g/c+ or more, preferably at a pressure of 75 to 200 kg/e- to obtain a molded body.

−6= この成形体をワイヤー放電加工機、バンドソーなどの切
断加工機にて切断、仕上加工を行い所定の形状の光記録
用スパッタリングターゲットとする。
-6= This molded body is cut and finished using a cutting machine such as a wire electric discharge machine or a band saw to obtain a sputtering target for optical recording in a predetermined shape.

[発明の効果] このようにして得られたターゲットは実質的に均一組成
であり、はぼ理論密度に等しいものである。また、焼結
性が向上し、粒子間の結合力が高くなったものである。
[Effects of the Invention] The target thus obtained has a substantially uniform composition and has approximately the same theoretical density. Furthermore, the sinterability is improved and the bonding force between particles is increased.

本発明により得られた光記録用ターゲットはスパッタリ
ングにより成膜され光ディスクとされる。
The optical recording target obtained according to the present invention is formed into a film by sputtering to form an optical disc.

この場合、従来の複合ターゲット(モザイク状)、単一
金属にその他の金属のチップを乗せただけのターゲット
より成膜して得た光ディスクに比べ次の様な利点がある
In this case, there are the following advantages compared to an optical disk obtained by forming a film from a conventional composite target (mosaic type) or a target in which chips of other metals are mounted on a single metal.

(1)ターゲットと同一組成の膜が得られスパッタリン
グ条件が安定化する。
(1) A film having the same composition as the target is obtained and the sputtering conditions are stabilized.

(2)連続スパッタリングが可能となり、生産性の向上
が期待されコストダウンが図れる。
(2) Continuous sputtering becomes possible, improving productivity and reducing costs.

[実施例] 以下本発明を実施例により説明する。本発明はこれらの
実施例により同等制限されるものではない。
[Examples] The present invention will be explained below using examples. The present invention is not equally limited by these examples.

実施例I Se  30.6wt%、Sb  47.18vt%。Example I Se 30.6wt%, Sb 47.18vt%.

In  22.22vt%の割合で、石英封管中、40
0〜500℃で5h加熱反応させ、得られたセレナイド
をアルゴン雰囲気で粉砕し、平均粒径80μmのセレナ
イド粉末を得た。これに Te7g、76wt%、  
5e−8b−In  21. 24vt%の割合でTe
粉末(平均粒径100μm)を加え、ボールミルを用い
てシクロヘキサン中で60分間微粉砕混合し、十分乾燥
し、ホットプレス用原料粉末(Te  75.Se  
10.Sb  IQ、In5(11%))を得た。 得
られた粉末をゴム型につめ、冷間静水圧プレス(CI 
P)を用いて、5 ton /cjで加圧成型し、得ら
れた圧粉体を152.4關φx30mstに加工し、十
分乾燥した後、ホットプレスを用い、アルゴン雰囲気。
In a quartz sealed tube at a rate of 22.22 vt%, 40
A heating reaction was carried out at 0 to 500°C for 5 hours, and the obtained selenide was pulverized in an argon atmosphere to obtain selenide powder with an average particle size of 80 μm. To this, Te7g, 76wt%,
5e-8b-In 21. Te at a rate of 24vt%
Powder (average particle size 100 μm) was added, pulverized and mixed for 60 minutes in cyclohexane using a ball mill, thoroughly dried, and hot press raw material powder (Te 75.Se
10. Sb IQ, In5 (11%)) was obtained. The obtained powder was packed into a rubber mold and cold isostatically pressed (CI).
Pressure molding was performed using P) at 5 ton/cj, and the resulting green compact was processed into a size of 152.4 mm φ x 30 mst, sufficiently dried, and then heated using a hot press in an argon atmosphere.

410℃、150kg/c−で加熱加圧し、成形体(H
,P、成形体)を得た。
The molded body (H
, P, molded body) was obtained.

この成形体をワイヤー放電加工機にて切断加工し、15
2.4u+φx5mm’のターゲットを製造した。こう
して得られたターゲットは、表1に示す通り、理論密度
に近いものであった。
This molded body was cut using a wire electrical discharge machine, and
A target of 2.4u+φx5mm' was manufactured. As shown in Table 1, the target thus obtained had a density close to the theoretical density.

実施例2 高周波誘導溶解炉にて、30kgの鋳塊を得るため、T
e  94.7wt%、  Se  5. 3wt%の
割合でアルゴンガス600鵬膳Hg、450〜500℃
で溶解しこの溶湯を、アルゴンガス雰囲気下でカーボン
鋳型に鋳造し、得られた鋳塊をクラッシャーを用いて粗
砕し、平均粒径150μmの合金粉末を得た。
Example 2 In order to obtain a 30 kg ingot in a high frequency induction melting furnace, T
e 94.7wt%, Se 5. Argon gas 600Hg at a ratio of 3wt%, 450-500℃
The molten metal was cast into a carbon mold under an argon gas atmosphere, and the resulting ingot was crushed using a crusher to obtain alloy powder with an average particle size of 150 μm.

一方、Se  50wt%、5b50vt%の割合で、
石英封管中、400〜500℃で5h加熱反応させ、得
られたセレナイドをアルゴン雰囲気で粉砕し、平均粒径
80μmのセレナイド粉末を得た。
On the other hand, at a ratio of Se 50wt% and 5b50vt%,
A heating reaction was carried out at 400 to 500° C. for 5 hours in a quartz sealed tube, and the obtained selenide was pulverized in an argon atmosphere to obtain selenide powder with an average particle size of 80 μm.

こうして得られた両セレナイド粉末を、Te−5e  
89.86wt%、  5e−Sb  10. 14v
t%の割合でボールミルを用いてシクロヘキサン中で6
0分間微粉砕混合し、十分乾燥し、ホットプレス用原料
粉末(Te  80.Se  15.5b5(11%)
)を得た。
Both selenide powders obtained in this way were mixed with Te-5e
89.86wt%, 5e-Sb 10. 14v
6 in cyclohexane using a ball mill at a rate of t%.
Finely pulverize and mix for 0 minutes, dry thoroughly, and prepare raw material powder for hot press (Te 80.Se 15.5b5 (11%)
) was obtained.

これを21(I−−X210鰭 ×50■、1の黒鉛型
に充填し、ホットプレスを用い、アルゴン雰囲気、39
0℃、  200 kg/eJで加熱加圧し、成形体(
H,P、成形体)を得た。
This was filled into a graphite mold of 21 (I--
The molded body (
H, P, molded body) were obtained.

この成形体をワイヤー放電加工機にて切断加工し、21
〇一層 X210m園 ×5−■tのターゲットを製造
した。こうして得られたターゲットは、表1に示す通り
、理論密度に近いものであった。
This molded body was cut using a wire electric discharge machine, and
A target of 1 layer x 210m x 5-■t was manufactured. As shown in Table 1, the target thus obtained had a density close to the theoretical density.

表−1ホットプレス成形体の密度 [単位:r/cd]Table-1 Density of hot press molded product [Unit: r/cd]

Claims (1)

【特許請求の範囲】 1)チタン、銀、ひ素、鉛、アンチモン及びインジウム
からなる群より選ばれた一種以上の金属をセレンまたは
セレン合金と混合し、真空下またはアルゴン、窒素、ヘ
リウムなどの不活性ガス雰囲気下で加熱反応させ、セレ
ナイドとし、これにテルルまたはテルル合金を加え、非
酸化雰囲気下で微粉砕混合し、得られた微粉末混合物を
、直接ホットプレスするか、または冷間静水圧プレス(
CIP)により、圧粉体とし、更にホットプレスし、実
質的に均一組成でほぼ理論密度に等しい成型体とするこ
とを特徴とする光記録用スパッタリングターゲットの製
造方法。 2)数種のセレナイドにテルルまたはテルル合金を加え
、微粉砕混合する特許請求の範囲第(1)項に記載の製
造方法。 3)テルルまたはテルル合金とセレナイドを有機溶媒中
で、平均粒径0.5〜50μmに微粉砕混合する特許請
求の範囲第(1)項または第(2)項に記載の製造方法
[Scope of Claims] 1) One or more metals selected from the group consisting of titanium, silver, arsenic, lead, antimony, and indium are mixed with selenium or a selenium alloy, and the mixture is heated under vacuum or with an impurity such as argon, nitrogen, helium, etc. A heating reaction is carried out in an active gas atmosphere to form selenide, to which tellurium or tellurium alloy is added and pulverized and mixed in a non-oxidizing atmosphere.The resulting fine powder mixture is directly hot pressed or cold isostatically pressed. press(
1. A method for producing a sputtering target for optical recording, which comprises forming a green compact by CIP), followed by hot pressing to obtain a compact having a substantially uniform composition and approximately the same theoretical density. 2) The manufacturing method according to claim (1), in which tellurium or a tellurium alloy is added to several types of selenides, and the mixture is pulverized and mixed. 3) The manufacturing method according to claim (1) or (2), wherein tellurium or a tellurium alloy and selenide are pulverized and mixed in an organic solvent to an average particle size of 0.5 to 50 μm.
JP25290985A 1985-11-13 1985-11-13 Production of sputtering target for optical recording Pending JPS62114136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25290985A JPS62114136A (en) 1985-11-13 1985-11-13 Production of sputtering target for optical recording

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25290985A JPS62114136A (en) 1985-11-13 1985-11-13 Production of sputtering target for optical recording

Publications (1)

Publication Number Publication Date
JPS62114136A true JPS62114136A (en) 1987-05-25

Family

ID=17243853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25290985A Pending JPS62114136A (en) 1985-11-13 1985-11-13 Production of sputtering target for optical recording

Country Status (1)

Country Link
JP (1) JPS62114136A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03264640A (en) * 1990-03-13 1991-11-25 Hitachi Metals Ltd Ti-w target material and production thereof
US5882493A (en) * 1993-12-13 1999-03-16 Ricoh Company, Ltd. Heat treated and sintered sputtering target

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03264640A (en) * 1990-03-13 1991-11-25 Hitachi Metals Ltd Ti-w target material and production thereof
US5882493A (en) * 1993-12-13 1999-03-16 Ricoh Company, Ltd. Heat treated and sintered sputtering target

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