JP2568826B2 - Method of producing target for spattering - Google Patents
Method of producing target for spatteringInfo
- Publication number
- JP2568826B2 JP2568826B2 JP61139604A JP13960486A JP2568826B2 JP 2568826 B2 JP2568826 B2 JP 2568826B2 JP 61139604 A JP61139604 A JP 61139604A JP 13960486 A JP13960486 A JP 13960486A JP 2568826 B2 JP2568826 B2 JP 2568826B2
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- mold
- target
- casting
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はスパッタリング用ターゲットの製造方法に関
する。The present invention relates to a method for manufacturing a sputtering target.
光磁気用垂直磁化膜作成方法としては、現在主にスパ
ッタリングが使用されている。光磁気効果を大きくし、
記録媒体としての実用性を持った薄膜を作成するため
に、膜組成は、多元素を含んでいる。このため多元素同
時スパッタリングが必要となっている。At present, sputtering is mainly used as a method for forming a perpendicular magnetic film for magneto-optics. Increase the magneto-optical effect,
In order to form a thin film having practical use as a recording medium, the film composition contains multiple elements. For this reason, multi-element simultaneous sputtering is required.
従来多元素同時スパッタリングの方法としてはターゲ
ットの観点より以下の５種類に分類される。Conventional multi-element simultaneous sputtering methods are classified into the following five types from the viewpoint of the target.
複数のターゲットを同時に使用する多元同時スパッ
タリング法。Multi-source simultaneous sputtering method using multiple targets simultaneously.
ある組成の金属ターゲット上に他の金属チップを置
いたチップオンターゲットを用いる方法。A method using a chip-on-target in which another metal chip is placed on a metal target having a certain composition.
組成元素が違う金属片を機械的に組み合わせた複合
ターゲットを用いる方法。A method using a composite target in which metal pieces having different composition elements are mechanically combined.
各種金属粉末を焼結した焼結ターゲットを用いる方
法。A method using a sintered target obtained by sintering various metal powders.
各種金属を溶解鋳造した合金ターゲットを用いる方
法。A method using an alloy target obtained by melting and casting various metals.
ここでを用いる場合、複数の電源の設定が必要とな
り、またスパッタリングに伴いターゲット形状の変化に
より各ターゲットのスパッタリングレートが変化するの
で、薄膜の組成分布が変化し制御が困難である。を用
いる場合チップを置く位置の変化及びスパッタリングに
伴うターゲットまたは、チップの形状変化により薄膜成
分の分布が変化し組成の制御が困難である。を用いる
場合は、所望組成の正確性、成膜の高速性を得るために
は、複雑な加工を要する欠点がある。は、金属を微粉
末化する際、表面が酸化し、焼成したターゲットには多
量の酸素が含有され、成膜された記録媒体は、の
方法により成膜された記録媒体に比しその記録性能は劣
化する。は、上記で問題となった膜組成分布の制御、
含有酸素量という観点において〜より望ましく、ま
た量産という観点からしても最も有望とされる方法であ
る。When this method is used, a plurality of power supplies need to be set, and the sputtering rate of each target changes due to a change in the shape of the target accompanying the sputtering, so that the composition distribution of the thin film changes and control is difficult. In the case of using, the distribution of the thin film component changes due to a change in the position where the chip is placed and a change in the shape of the target or the chip accompanying the sputtering, and it is difficult to control the composition. Is disadvantageous in that complicated processing is required to obtain the desired composition accuracy and high film formation speed. In the case of pulverizing metal, the surface is oxidized and the baked target contains a large amount of oxygen, and the recording medium formed has a higher recording performance than the recording medium formed by the above method. Deteriorates. Is the control of the film composition distribution which was a problem above,
This method is more preferable in terms of the oxygen content, and is the most promising method from the viewpoint of mass production.
しかし現在実用化されつつある光磁気記録媒体の組成
である希土類、遷移金属系合金をの合金ターゲットと
して鋳造した場合、合金は金属間化合物を形成し非常に
脆くなり、鋳塊冷却時の熱歪によりクラックが生じ大面
積のターゲットが形成出来ないという問題点を有する。
特に、希土類元素の種類によっては、合金化が困難な場
合もある。However, when casting as a target of a rare earth or transition metal alloy, which is a composition of a magneto-optical recording medium that is currently being put into practical use, the alloy forms an intermetallic compound and becomes very brittle, resulting in thermal strain during cooling of the ingot. Therefore, there is a problem that a crack occurs and a large-area target cannot be formed.
Particularly, alloying may be difficult depending on the type of the rare earth element.
そこで本発明は、このような問題点を解決するもの
で、その目的とするところは、脆弱な希土類−遷移金属
性合金を鋳造して良好なスパッタリング用合金ターゲッ
トを提供するところにある。The present invention solves such a problem, and an object of the present invention is to provide a favorable sputtering alloy target by casting a fragile rare earth-transition metal alloy.
本発明は、鋳塊が偏平でかつ少なくとも前記偏平方向
の断面がほぼ目的とするターゲット形状となるように設
計された鋳型を予熱する工程と、予熱された前記鋳型を
用いて希土類−遷移金属系合金を溶解、鋳造する工程
と、鋳造した鋳塊に研削加工を施してターゲットを得る
工程とを有するスパッタリング用ターゲットの製造方法
であって、前記鋳造の際に、前記鋳型の鋳塊平面中央部
近傍に接触する部分の突起部を設けて、鋳塊の中央付近
の潜熱を吸収し、鋳塊の偏平な平面内の温度分布を均一
となるようにしたことを特徴とするスパッタリング用タ
ーゲットの製造方法である。この場合、前記予熱の温度
は、200〜700℃の範囲が好ましい。また、ターゲット形
状への研削加工の方法は、特に限定されず、回転砥石に
よる表面研削、スライス等の公知の方法が可能である。The present invention includes a step of preheating a mold designed so that the ingot is flat and at least the cross section in the flat direction has a substantially desired target shape, and a rare earth-transition metal system using the preheated mold. A method for manufacturing a sputtering target having a step of melting and casting an alloy and a step of performing a grinding process on a cast ingot to obtain a target, and at the time of the casting, the center of the ingot plane of the mold. The production of a sputtering target characterized by providing a protruding portion in the vicinity of the ingot, absorbing latent heat near the center of the ingot, and making the temperature distribution in a flat plane of the ingot uniform. Is the way. In this case, the preheating temperature is preferably in the range of 200 to 700 ° C. In addition, the method of grinding to the target shape is not particularly limited, and a known method such as surface grinding with a rotating grindstone and slicing can be used.
〔作 用〕 本発明のスパッタリング用ターゲットの製造方法によ
れば、予め鋳型を200〜700℃の温度で熱することによ
り、鋳込み時の熱衝撃が小さくなり、鋳塊全体の熱歪が
小さくなる。また、鋳塊が偏平となるようにかつその中
央付近に棒状突起物を装着して鋳造を行えば、鋳塊の中
央付近の潜熱が吸収され、鋳塊の偏平な平面内の冷却時
の温度分布が均一となり、部分的な熱歪による引張応力
が生ずるということがなくなる。従って、本発明の製造
方法では、全体的、部分的に鋳塊の熱歪が小さくなり、
クラックの発生が防止される。また、例え微小なクラッ
クが生じたとしても、研削により除去できるので良好な
ターゲットが得られる。[Operation] According to the method for manufacturing a sputtering target of the present invention, by previously heating the mold at a temperature of 200 to 700 ° C., the thermal shock during casting is reduced, and the thermal strain of the entire ingot is reduced. . In addition, if casting is performed with a bar-shaped projection attached near the center of the ingot to be flat, the latent heat near the center of the ingot is absorbed, and the temperature of the ingot during cooling in a flat plane is reduced. The distribution becomes uniform, and tensile stress due to partial thermal strain does not occur. Therefore, in the manufacturing method of the present invention, the heat distortion of the ingot is reduced entirely and partially,
The occurrence of cracks is prevented. Further, even if a minute crack occurs, it can be removed by grinding, so that a good target can be obtained.
第１図は、本発明の実施例における構造鋳型である。
鋳造鋳型は鋳型本体１と棒状の突起部４と発熱体部５か
ら構成されている。（ａ）は正面図、（ｂ）は鋳型部の
側面図、（ｃ）はヒーター部の側面図である。使用時に
おいて鋳型部とヒーター部は、（ａ）の様に組み合わさ
っているが、図を明快にするために（ｂ）、（ｃ）の側
面図においては、別々に示してある。鋳型本体１におい
て、点線は鋳型内壁を示している。内壁は、円形ターゲ
ットの形に合わせた円形部２と押し湯部３から成る偏平
部である。鋳型の偏平面の中央には、ある程度の熱容量
を持った突起部４がネジ止めされている。鋳型部と突起
部の材質はそれぞれステンレスと銅であるが高温（約13
00℃）に耐え得る金属・セラミックスならばどのような
材質でもよい。また突起部は、鋳型本体１と一体成型さ
れてもよい。ヒーター部は、耐熱レンガ性のホルダー５
に発熱体本体を７に示す線に沿って埋め込む。ヒーター
部中央には円形状の穴をあけ、突起部４を貫通させてい
る。本鋳型は６に示す偏平な面に平行な面により左右対
称に作られている。また本鋳型全体は、耐熱レンガによ
って作られた保温体により保温されている。FIG. 1 is a structural template according to an embodiment of the present invention.
The casting mold includes a mold body 1, a rod-shaped projection 4, and a heating element 5. (A) is a front view, (b) is a side view of a mold part, and (c) is a side view of a heater part. In use, the mold part and the heater part are combined as shown in (a), but are separately shown in the side views of (b) and (c) for clarity. In the mold main body 1, the dotted line indicates the inner wall of the mold. The inner wall is a flat portion including a circular portion 2 and a feeder portion 3 that match the shape of the circular target. A projection 4 having a certain heat capacity is screwed to the center of the offset plane of the mold. The material of the mold part and the protruding part are stainless steel and copper, respectively.
Any material may be used as long as the material is a metal or ceramic that can withstand 00 ° C). Further, the protrusion may be formed integrally with the mold body 1. The heater is a heat-resistant brick holder 5.
The heating element body is buried along the line shown in FIG. A circular hole is made in the center of the heater portion, and the protrusion 4 is made to penetrate. This mold is made symmetrically by a plane parallel to the flat plane shown in FIG. The entire mold is kept warm by a heat insulator made of heat-resistant bricks.
次に本実施例における工程を説明する。まず本体鋳型
内部に離型剤であるムライトを塗布、乾燥後真空溶解炉
内に設置する。次に真空溶解炉内にて金属（希土類−遷
移金属系合金）を真空加熱すると同時に鋳型のヒーター
を用い鋳型を加熱する。鋳型の中央部と外縁部には熱電
対を設置しておき、鋳型本体温度を約200〜700℃の一定
温に制御する。加熱している金属が溶解したら鋳型に鋳
込む。鋳込み温度は、高すぎると鋳型を溶解してしまう
おそれがあり、低すぎると溶湯の粘度が上がりすぎ、鋳
込み性が悪くなり鋳塊にブローホールを生ずる。従って
鋳込み温度は、希土類−遷移金属系合金に関しては、約
1550゜が良い。Next, steps in this embodiment will be described. First, mullite, which is a release agent, is applied to the inside of the main body mold, dried, and then placed in a vacuum melting furnace. Next, the metal (rare earth-transition metal based alloy) is vacuum-heated in a vacuum melting furnace, and at the same time, the mold is heated using a mold heater. Thermocouples are installed at the center and the outer edge of the mold, and the temperature of the mold body is controlled to a constant temperature of about 200 to 700 ° C. When the heated metal is melted, it is cast into a mold. If the casting temperature is too high, the casting mold may be melted. If the casting temperature is too low, the viscosity of the molten metal becomes too high, the casting property is deteriorated, and blowholes occur in the ingot. Therefore, the casting temperature is approximately equal for rare earth-transition metal based alloys.
1550 ゜ is good.
鋳型の予熱に関しては、200℃未満とすると、希土類
−遷移金属系合金が本来脆い材質であることから、鋳塊
が複数個に割れて出て来ることがあり、また、700℃を
超えると、金属製の鋳型の場合、その組成によっては鋳
型が溶融し、溶湯中に混入することがある（セラミック
製の鋳型を用いると、冷却時間がかかりすぎる）。Regarding the preheating of the mold, if it is less than 200 ° C, since the rare earth-transition metal based alloy is originally a brittle material, the ingot may come out in a plurality of pieces, and if it exceeds 700 ° C, In the case of a metal mold, depending on the composition, the mold may melt and mix into the molten metal (the cooling time is excessively long when a ceramic mold is used).
前記鋳型の予熱を行わず、かつ棒状突起物を装着しな
い場合には、鋳塊中央部に熱歪による引っ張り応力が生
じ、第２図に示すごとく鋳塊中央部にひび割れが入る。
第２図中10はターゲット形状をした鋳塊、11は中央部に
入ったひび割れである。If the mold is not preheated and the rod-shaped projection is not mounted, a tensile stress is generated at the center of the ingot due to thermal strain, and the center of the ingot is cracked as shown in FIG.
In FIG. 2, reference numeral 10 denotes an ingot having a target shape, and reference numeral 11 denotes a crack in the center.
以上述べたように、本発明によれば、希土類−遷移金
属系合金を溶解、鋳造するに際し、鋳型を予め200〜700
℃に加熱すること、また、鋳型中央部に棒状突起物を装
着することにより、ひび割れがないかまたは極めて少な
い鋳塊が得られ、その鋳塊から良好なスパッタリング用
ターゲットが研削、形成できる。As described above, according to the present invention, a rare-earth-transition metal-based alloy is melted and cast, and a mold is previously set to 200 to 700.
By heating to ° C. and mounting a bar-shaped projection at the center of the mold, an ingot having no or very few cracks can be obtained, and a good sputtering target can be ground and formed from the ingot.
第１図は本発明の鋳型部とヒーター部の一実施例を示
し、（ａ）は正面図、（ｂ）は鋳型部の側面図、（ｃ）
はヒーター部の側面図である。 第２図は、中央部にひびの入った鋳塊の一例を示す図で
ある。FIG. 1 shows an embodiment of a mold section and a heater section of the present invention, wherein (a) is a front view, (b) is a side view of the mold section, and (c).
FIG. 4 is a side view of a heater section. FIG. 2 is a diagram showing an example of an ingot with a crack in the center.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 堀内 清秋 諏訪市大和３丁目３番５号 セイコーエ プソン株式会社内 (56)参考文献 特開 昭61−124566（ＪＰ，Ａ) 特開 昭61−86061（ＪＰ，Ａ) 特公 昭59−14293（ＪＰ，Ｂ２) ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Kiyoaki Horiuchi 3-3-5 Yamato Suwa City Inside Seiko Epson Corporation (56) References JP-A-61-124566 (JP, A) JP-A-61-86061 (JP, A) JP-B-59-14293 (JP, B2)
Claims (1)
の断面がほぼ目的とするターゲット形状となるように設
計された鋳型を予熱する工程と、 予熱された前記鋳型を用いて希土類−遷移金属系合金を
溶解、鋳造する工程と、 鋳造した鋳塊に研削加工を施してターゲットを得る工程
とを有するスパッタリング用ターゲットの製造方法であ
って、 前記鋳造の際に、前記鋳型の鋳塊平面中央部近傍に接触
する部分に突起部を設けて、鋳塊の中央付近の潜熱を吸
収し、鋳塊の偏平な平面内の温度分布を均一となるよう
にしたことを特徴とするスパッタリング用ターゲットの
製造方法。1. A step of preheating a mold designed such that an ingot is flat and at least a cross section in the flat direction has a substantially desired target shape, and a rare earth-transition metal using the preheated mold. A method for manufacturing a sputtering target, comprising: a step of melting and casting a system alloy; and a step of performing a grinding process on a cast ingot to obtain a target. The projection target is provided in a portion in contact with the vicinity of the ingot, to absorb latent heat near the center of the ingot, and to make the temperature distribution in a flat plane of the ingot uniform, Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61139604A JP2568826B2 (en) | 1986-06-16 | 1986-06-16 | Method of producing target for spattering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61139604A JP2568826B2 (en) | 1986-06-16 | 1986-06-16 | Method of producing target for spattering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62297464A JPS62297464A (en) | 1987-12-24 |
| JP2568826B2 true JP2568826B2 (en) | 1997-01-08 |
Family
ID=15249144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61139604A Expired - Lifetime JP2568826B2 (en) | 1986-06-16 | 1986-06-16 | Method of producing target for spattering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2568826B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0257682A (en) * | 1988-08-22 | 1990-02-27 | Seiko Epson Corp | Manufacture of sputtering target |
| DE10043748B4 (en) * | 2000-09-05 | 2004-01-15 | W. C. Heraeus Gmbh & Co. Kg | Cylindrical sputtering target, process for its production and use |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5914293A (en) * | 1982-07-15 | 1984-01-25 | 株式会社日立製作所 | Temperature controller for induction heating vacuum melting furnace |
| JPS6186061A (en) * | 1984-10-04 | 1986-05-01 | Toshiba Mach Co Ltd | Metallic mold for casting |
| JPS61124566A (en) * | 1984-11-19 | 1986-06-12 | Mitsubishi Metal Corp | Production of al-si alloy target plate material for sputtering |
-
1986
- 1986-06-16 JP JP61139604A patent/JP2568826B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62297464A (en) | 1987-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |