CN111660003A - Sputtering target welding method - Google Patents
Sputtering target welding method Download PDFInfo
- Publication number
- CN111660003A CN111660003A CN202010573673.1A CN202010573673A CN111660003A CN 111660003 A CN111660003 A CN 111660003A CN 202010573673 A CN202010573673 A CN 202010573673A CN 111660003 A CN111660003 A CN 111660003A
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- welding
- sputtering target
- rotary cutter
- back plate
- welding method
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
- B23K20/122—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/26—Auxiliary equipment
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Physical Vapour Deposition (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The invention discloses a sputtering target welding method, which relates to the technical field of target welding, and is implemented by the following devices, comprising the following steps of: sputtering target material, back plate and friction stir welding machine; the sputtering target welding method comprises the following steps: firstly, setting the distance between a sputtering target and a welding joint part of a back plate to be less than or equal to 1 mm; then welding through a friction stir welding machine, inserting a rotary cutter on the friction stir welding machine into the welding joint part, wherein the insertion depth of the rotary cutter is 3-20 mm, and the sputtering target and the back plate synchronously rotate when the rotary cutter is used for carrying out rotary welding; the back plate is made of aluminum alloy or copper alloy, so that the cost of raw materials for manufacturing the sputtering target material is saved, high welding rate is ensured, and the cost is reduced in the large-scale production by adopting the welding method, so that the sputtering target material with low cost can be produced in a large scale, and the cost for manufacturing the chip is greatly reduced when the target material is used for manufacturing the chip.
Description
Technical Field
The invention relates to the technical field of target welding, in particular to a sputtering target welding method.
Background
Generally, a sputtering target mainly comprises a target blank, a back plate and the like, wherein the target blank is a target material bombarded by high-speed ion beams and belongs to a core part of the sputtering target; because the high-purity metal has low strength, the sputtering target material needs to be installed in a special machine table to complete the sputtering process, and the inside of the machine table is in a high-voltage and high-vacuum environment, the sputtering target blank of the ultrahigh-purity metal needs to be jointed with a back plate through different welding processes, and the back plate mainly plays a role in fixing the sputtering target material and needs to have good electric conduction and heat conduction performance; in the prior art, the sputtering target material is integrally formed, and needs to be made of a large raw material during manufacturing, so that the raw material cost is extremely high, the high cost is caused, the sputtering target material also pays high cost during manufacturing a chip, and the development of the chip manufacturing industry is not facilitated.
Disclosure of Invention
First, technical problem to be solved
The invention aims to overcome the defects in the prior art, and particularly provides a sputtering target welding method, which solves the problem that the existing integrally formed sputtering target is high in cost and also solves the problem that the sputtering target is low in production efficiency.
Second, technical scheme
In order to solve the above-mentioned technical problems, the present invention provides a sputtering target welding method, which is implemented by the following means, including: sputtering target material, back plate and friction stir welding machine;
the sputtering target welding method comprises the following steps:
firstly, setting the distance between a sputtering target and a welding joint part of a back plate to be less than or equal to 1 mm;
and then welding through a friction stir welding machine, inserting a rotary cutter on the friction stir welding machine into the welding joint part, wherein the insertion depth of the rotary cutter is 3-20 mm, and the sputtering target and the back plate synchronously rotate when the rotary cutter is used for carrying out rotary welding.
Wherein, the backboard is made of aluminum alloy or copper alloy.
Wherein the rotating speed of the rotary cutter is 500-2000 rpm.
Wherein the synchronous rotation speed of the sputtering target and the back plate is 50-200 mm/min.
And the welding temperature for welding by rotating the rotary cutter is less than or equal to the temperature corresponding to the metal solidus line of the backboard material.
Wherein the burr height of the welding position in the sputtering target welding process is h;
when h is more than 0mm and less than or equal to 1mm, the burr height is in a normal state, and welding is continued;
when h is larger than 1mm, reducing the insertion depth of the rotary cutter to reduce the height of the burr to a normal state and continuing welding;
when h is 0mm, the burr height is raised to a normal state and welding is continued by increasing the insertion depth of the rotary cutter.
Wherein the burr height of the welding position in the sputtering target welding process is h;
when h is more than 0mm and less than or equal to 1mm, the burr height is in a normal state, and welding is continued;
when h is larger than 1mm, reducing the rotating speed of the rotating cutter to reduce the height of the burr to a normal state and continuing welding;
when h is 0mm, the burr height is raised to a normal state and welding is continued by increasing the rotation speed of the rotary cutter.
Third, beneficial effect
Compared with the prior art, the sputtering target welding method provided by the invention has the advantages that the cost of raw materials for manufacturing the sputtering target is saved through the back plate of the aluminum or copper alloy, the high welding rate is ensured, the cost is reduced during large-scale production by adopting the welding method, so that the sputtering target with low cost can be produced in large scale, and the cost for manufacturing the chip is greatly reduced when the target is used for manufacturing the chip;
meanwhile, the height of burrs generated in the welding process is adjusted by controlling the insertion depth of the rotary cutter and the rotating speed of the rotary cutter in real time, and the welding quality is ensured.
Drawings
FIG. 1 is a schematic view of a sputtering target and backing plate of the present invention;
in the figure: 1 is a sputtering target material; and 2 is a back plate.
Detailed Description
The following detailed description of the present invention will be made with reference to the accompanying drawings and examples, which are provided for illustration of the present invention and are not intended to limit the scope of the present invention.
Example 1:
the sputtering target welding method provided by the invention is implemented by the following devices as shown in figure 1, and comprises the following steps: the sputtering target welding method comprises the following steps:
firstly, setting the distance between the welding joint parts of the sputtering target 1 and the back plate 2 to be 1 mm;
and then welding is carried out through a friction stir welding machine, a rotary cutter on the friction stir welding machine is inserted into the welding joint part, the insertion depth of the rotary cutter is 3mm, the rotary cutter rotates to carry out welding, and the sputtering target 1 and the back plate 2 synchronously rotate when the rotary cutter rotates to weld.
The welding success rate of the welding method of the embodiment is 98% on average, while the welding success rate of the welding method of the prior art is 40% on average, and the sputtering target material 1 and the back plate 2 can be well welded together to form the sputtering target material.
Example 2:
the invention provides a sputtering target welding method, which comprises the following steps:
firstly, setting the distance of a welding joint between a sputtering target 1 and a back plate 2 to be 0.2 mm;
and then welding by a friction stir welding machine, inserting a rotary cutter on the friction stir welding machine into the welding joint part, wherein the insertion depth of the rotary cutter is 10mm, the rotary cutter rotates to weld, and the sputtering target 1 and the back plate 2 synchronously rotate when the rotary cutter rotates to weld.
In this embodiment, the back plate 2 is made of an aluminum alloy or a copper alloy. The rotating tool rotates at a speed of 500 rpm. The speed of the synchronous rotation of the sputtering target 1 and the back plate 2 is 50mm/min, and the welding temperature is slightly higher than 400 ℃.
The back plate 2 is made of aluminum or aluminum alloy materials, the cost of raw materials can be greatly reduced, the welding success rate is 98% on average by adopting the welding method of the embodiment, the success rate of the welding method of the prior art is 40% on average, and the sputtering target 1 and the back plate 2 can be well welded together to form the sputtering target.
In addition, in the embodiment, burrs are generated at the welding position in the sputtering target welding process, and the height of the burrs is h; when h is more than 0mm and less than or equal to 1mm, the burr height is in a normal state, and welding is continued in the state, so that the welding quality of the sputtering target material is high;
in the actual welding process, along with the abrasion and deformation of the rotary cutter, the welding condition becomes unstable, so that the welding quality is influenced, and the poor joint condition occurs at the welding position; meanwhile, the state of burr generation at the welding position changes, namely the height of the burr changes correspondingly.
Namely, when h is more than 1mm, the burr height is reduced to a normal state and welding is continued by reducing the insertion depth of the rotary cutter; specifically, in order to reduce the burr height to a normal state, the burr height can be correspondingly reduced by 1mm when the insertion depth of the rotary cutter is reduced by 0.02 mm;
for example, the height of the burr is 2mm, at the moment, the insertion depth of the rotary cutter is reduced by 0.02mm, namely, the height of the burr can be reduced by 1mm, so that the normal state is recovered for continuing welding, and the adjustment of the burr is carried out in real time in the welding process;
when h is 0mm, the burr height is increased to the normal state and welding is continued by increasing the insertion depth of the rotary cutter, specifically, the insertion depth of the rotary cutter is increased by 0.02mm at this time, the burr height can be increased by 1mm, and welding is continued by returning to the normal state.
Example 3:
the invention provides a sputtering target welding method, which comprises the following steps:
firstly, setting the distance of a welding joint between a sputtering target 1 and a back plate 2 to be 0.1 mm;
and then welding by a friction stir welding machine, inserting a rotary cutter on the friction stir welding machine into the welding joint part, wherein the insertion depth of the rotary cutter is 13mm, the rotary cutter rotates to weld, and the sputtering target 1 and the back plate 2 synchronously rotate when the rotary cutter rotates to weld.
In addition, in this embodiment, the back plate 2 is made of an aluminum alloy material, and a copper alloy material may also be used. The rotating tool rotates at 2000 rpm. The speed of synchronous rotation of the sputtering target 1 and the back plate 2 is 150mm/min, and the welding temperature is 500 ℃.
The back plate 2 is made of aluminum alloy or copper alloy materials, the cost of raw materials can be greatly reduced, the welding success rate is 98% on average by adopting the welding method of the embodiment, the success rate of the welding method in the prior art is 40% on average, and the sputtering target 1 and the back plate 2 can be well welded together to form the sputtering target.
Example 4:
the invention provides a sputtering target welding method, which comprises the following steps:
firstly, setting the distance between a welding joint part between a sputtering target material 1 and a back plate 2 to be 0 mm;
and then welding by a friction stir welding machine, inserting a rotary cutter on the friction stir welding machine into the welding joint part, wherein the insertion depth of the rotary cutter is 20mm, the rotary cutter rotates to weld, and the sputtering target 1 and the back plate 2 synchronously rotate when the rotary cutter rotates to weld.
In addition, in this embodiment, the back plate 2 is made of an aluminum alloy material, and a copper alloy material may also be used. The rotating tool was rotated at 1500 rpm. The speed of the synchronous rotation of the sputtering target 1 and the back plate 2 is 200mm/min, and the welding temperature is 580 ℃.
The welding success rate of the welding method of the embodiment is 98% on average, while the welding success rate of the welding method of the prior art is 40% on average, and the sputtering target material 1 and the back plate 2 can be well welded together to form the sputtering target material.
Example 5:
compared with the embodiment 1, in the embodiment, the burr height is controlled by controlling the rotating speed of the rotating cutter, specifically, the burr height of the welding position in the sputtering target welding process is h;
when h is more than 0mm and less than or equal to 1mm, the burr height is in a normal state, and welding is continued;
when h is larger than 1mm, reducing the rotating speed of the rotating cutter to reduce the height of the burr to a normal state and continuing welding; specifically, in order to reduce the height of the burrs to a normal state, the height of the burrs can be correspondingly reduced by 1mm when the rotating speed of the rotating cutter is reduced by 2 percent;
for example, the height of the burr is 2mm, the rotating speed of the rotating cutter is reduced by 2%, the height of the burr can be reduced by 1mm, so that the burr is recovered to a normal state to continue welding, and the adjustment of the burr is performed in real time in the welding process;
when h is 0mm, through increasing the rotatory rotational speed of rotary cutter, make the burr height improve to normal condition and continue to weld, specifically speaking, increase the rotatory rotational speed of rotary cutter 2% this moment, can increase 1mm with the burr height to resume normal condition and continue to weld.
The above is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, it is possible to make several improvements and modifications without departing from the technical principle of the present invention, and these improvements and modifications should also be considered as the protection scope of the present invention.
Claims (7)
1. A sputtering target welding method is characterized in that: the sputtering target welding method is implemented by the following devices, and comprises the following steps: sputtering target material (1), back plate (2) and friction stir welding machine;
the sputtering target welding method comprises the following steps:
firstly, setting the distance between a welding joint part of a sputtering target (1) and a back plate (2) to be less than or equal to 1 mm;
and then welding through a friction stir welding machine, inserting a rotary cutter on the friction stir welding machine into the welding joint part, wherein the insertion depth of the rotary cutter is 3-20 mm, and when the rotary cutter is used for carrying out rotary welding, the sputtering target (1) and the back plate (2) synchronously rotate.
2. A sputter target welding method according to claim 1, characterized in that: the backboard (2) is made of aluminum alloy or copper alloy.
3. A sputter target welding method according to claim 1, characterized in that: the rotating speed of the rotating cutter is 500-2000 rpm.
4. A sputter target welding method according to claim 1, characterized in that: the synchronous rotation speed of the sputtering target (1) and the back plate (2) is 50-200 mm/min.
5. A sputter target welding method according to claim 1, characterized in that: the welding temperature of the rotary cutter for welding is less than or equal to the temperature corresponding to the metal solidus line of the material of the back plate (2).
6. A sputter target welding method according to claim 1, characterized in that: the burr height of the welding position in the sputtering target welding process is h;
when h is more than 0mm and less than or equal to 1mm, the burr height is in a normal state, and welding is continued;
when h is larger than 1mm, reducing the insertion depth of the rotary cutter to reduce the height of the burr to a normal state and continuing welding;
when h is 0mm, the burr height is raised to a normal state and welding is continued by increasing the insertion depth of the rotary cutter.
7. A sputter target welding method according to claim 3, characterized in that: the burr height of the welding position in the sputtering target welding process is h;
when h is more than 0mm and less than or equal to 1mm, the burr height is in a normal state, and welding is continued;
when h is larger than 1mm, reducing the rotating speed of the rotating cutter to reduce the height of the burr to a normal state and continuing welding;
when h is 0mm, the burr height is raised to a normal state and welding is continued by increasing the rotation speed of the rotary cutter.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010573673.1A CN111660003B (en) | 2020-06-22 | 2020-06-22 | Sputtering target welding method |
| KR1020200087317A KR102336276B1 (en) | 2020-06-22 | 2020-07-15 | Welding method for sputtering target material |
| TW109124296A TW202200298A (en) | 2020-06-22 | 2020-07-17 | A sputtering target welding method in the field of target welding |
| JP2020124079A JP7068392B2 (en) | 2020-06-22 | 2020-07-20 | Welding method for sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010573673.1A CN111660003B (en) | 2020-06-22 | 2020-06-22 | Sputtering target welding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111660003A true CN111660003A (en) | 2020-09-15 |
| CN111660003B CN111660003B (en) | 2021-08-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010573673.1A Active CN111660003B (en) | 2020-06-22 | 2020-06-22 | Sputtering target welding method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7068392B2 (en) |
| KR (1) | KR102336276B1 (en) |
| CN (1) | CN111660003B (en) |
| TW (1) | TW202200298A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114273771A (en) * | 2022-01-11 | 2022-04-05 | 先导薄膜材料有限公司 | Friction welding method of target assembly |
| CN114351096A (en) * | 2022-01-26 | 2022-04-15 | 浙江最成半导体科技有限公司 | Sputtering target, target assembly and manufacturing method of target assembly |
| CN114959618A (en) * | 2022-06-29 | 2022-08-30 | 浙江最成半导体科技有限公司 | Sputtering target material and preparation method thereof |
| CN115229324A (en) * | 2022-08-31 | 2022-10-25 | 宁波江丰电子材料股份有限公司 | Repair welding method for aluminum alloy back plate |
| CN115283818A (en) * | 2022-09-06 | 2022-11-04 | 宁波江丰电子材料股份有限公司 | Friction stir welding method for pure aluminum tubular target and aluminum alloy accessory |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117966108B (en) * | 2024-04-01 | 2024-06-11 | 洛阳康耀电子有限公司 | Operation method of automatic leveling device for binding planar target |
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- 2020-06-22 CN CN202010573673.1A patent/CN111660003B/en active Active
- 2020-07-15 KR KR1020200087317A patent/KR102336276B1/en active
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- 2020-07-20 JP JP2020124079A patent/JP7068392B2/en active Active
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| JPH07293213A (en) * | 1994-04-25 | 1995-11-07 | Fuji Oozx Inc | Engine valve and manufacture thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114273771A (en) * | 2022-01-11 | 2022-04-05 | 先导薄膜材料有限公司 | Friction welding method of target assembly |
| CN114273771B (en) * | 2022-01-11 | 2023-09-05 | 先导薄膜材料(安徽)有限公司 | Friction welding method for target assembly |
| CN114351096A (en) * | 2022-01-26 | 2022-04-15 | 浙江最成半导体科技有限公司 | Sputtering target, target assembly and manufacturing method of target assembly |
| CN114959618A (en) * | 2022-06-29 | 2022-08-30 | 浙江最成半导体科技有限公司 | Sputtering target material and preparation method thereof |
| CN115229324A (en) * | 2022-08-31 | 2022-10-25 | 宁波江丰电子材料股份有限公司 | Repair welding method for aluminum alloy back plate |
| CN115283818A (en) * | 2022-09-06 | 2022-11-04 | 宁波江丰电子材料股份有限公司 | Friction stir welding method for pure aluminum tubular target and aluminum alloy accessory |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102336276B1 (en) | 2021-12-08 |
| CN111660003B (en) | 2021-08-03 |
| JP7068392B2 (en) | 2022-05-16 |
| TW202200298A (en) | 2022-01-01 |
| JP2022001664A (en) | 2022-01-06 |
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Denomination of invention: A sputtering target welding method Effective date of registration: 20220421 Granted publication date: 20210803 Pledgee: Zhejiang Tailong Commercial Bank Co.,Ltd. Shaoxing Yuecheng small and micro enterprise franchise sub branch Pledgor: Zhejiang best Semiconductor Technology Co.,Ltd. Registration number: Y2022980004561 |