CN108213855A - Copper target components and its manufacturing method - Google Patents
Copper target components and its manufacturing method Download PDFInfo
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- CN108213855A CN108213855A CN201611163765.2A CN201611163765A CN108213855A CN 108213855 A CN108213855 A CN 108213855A CN 201611163765 A CN201611163765 A CN 201611163765A CN 108213855 A CN108213855 A CN 108213855A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
Abstract
A kind of copper target components and its manufacturing method, the manufacturing method include：Backboard and copper target material are provided, the backboard includes the first welding surface, and the copper target material includes the second welding surface；The decorative pattern being made of multiple protrusions is formed on first welding surface；Second welding surface is oppositely arranged and is bonded to form initial component with being formed with the first welding surface of decorative pattern；Soldering is carried out to the initial component, the protrusion in first welding surface is made to be embedded in second welding surface, welding layer is formed between the copper target material and the backboard, the thickness of the welding layer is greater than or equal to the height of the protrusion, to obtain copper target components.Technical solution of the present invention can effectively reduce the possibility for occurring gap in welding layer, so as to effectively improve the quality of formed copper target components and performance, be conducive to improve the yield and performance of made semiconductor chip.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of copper target components and its manufacturing method.
Background technology
Sputtering technology is one of conventional process of field of semiconductor manufacture, with growing, the sputtering target of sputtering technology
Material plays increasingly important role in sputtering technology, the quality of sputtering target material directly influenced after sputtering into film quality
Amount.
In sputtering target material manufacturing field, target material assembly is by welding phase by meeting the target blankss of sputtering performance, with target blankss
With reference to backboard form.In sputtering process, the working environment residing for target material assembly is more severe.Such as：The back of the body of target material assembly
Plate side is cold by force by the cooling water of certain pressure, and target blankss side is then under vacuum environment, therefore in target material assembly
Opposite sides form huge pressure differential；Furthermore target blankss side is bombarded by various particles in high voltage electric field and high-intensity magnetic field,
There is amount of heat generation.Under such rugged environment, in order to ensure the stability of film quality and the quality of target material assembly,
The requirement of quality and solder bond rate to target blankss and backboard is higher and higher, is otherwise easy to cause the target material assembly heated
Under the conditions of deform, problems of crack, so as to influence quality of forming film or even sputtering base is caused to damage.
Wherein, metallic copper is used to form the connecting components such as interconnection structure, conductor wire in semiconductor chip fabrication.Therefore
High-purity copper targets are widely used in the depositing operation of metallic copper.But the hardness of high-purity copper targets is relatively low, needs
Weld together with the alloy backboard of high rigidity.
But existing welding technique formed copper target components quality and performance it is to be improved.
Invention content
The present invention solves the problems, such as to be to provide a kind of copper target components and its manufacturing method, with improvement formation copper target material group
The quality and performance of part.
To solve the above problems, the present invention provides a kind of manufacturing method of copper target components, including：
Backboard and copper target material are provided, the backboard includes the first welding surface, and the copper target material includes the second welding surface；Institute
State the decorative pattern that formation is made of multiple protrusions on the first welding surface；By second welding surface and the first welding for being formed with decorative pattern
Face is oppositely arranged and is bonded to form initial component；Soldering is carried out to the initial component, is made in first welding surface
In embedded second welding surface of protrusion, welding layer, the thickness of the welding layer are formed between the copper target material and the backboard
Degree is greater than or equal to the height of the protrusion, to obtain copper target components.
Optionally, in the step of providing backboard, the material of the backboard is ormolu or chromiumcopper.
Optionally, in the step of providing copper target material, by mass percentage, the purity of the copper target material is more than 99.99%.
Optionally, on first welding surface formed decorative pattern the step of in, the decorative pattern be flat thread, the protrusion
Thread for the screw thread.
Optionally, between adjacent thread the ratio of distance and thread height in the range of 1.2 to 2.5.
Optionally, in the step of decorative pattern is formed on first welding surface, the height of the thread is arrived in 0.1mm
In the range of 1.5mm.
Optionally, in the step of decorative pattern is formed on first welding surface, the distance between adjacent thread is arrived in 0.2mm
In the range of 0.25mm.
Optionally, in the step of decorative pattern is formed on first welding surface, in the section of normal thread extending direction, institute
The size for stating thread is gradually reduced along the direction backwards to the backboard.
Optionally, in the step of decorative pattern is formed on first welding surface, in the section of normal thread extending direction, institute
The shape for stating thread is equilateral triangle.
Optionally, include in the step of formation decorative pattern on first welding surface：Described first by way of turning
The decorative pattern is formed on welding surface.
Optionally, it is formed after decorative pattern on first welding surface, by second welding surface and is formed with decorative pattern
First welding surface is oppositely arranged and is bonded before forming initial component, and the manufacturing method further includes：To being formed with the of decorative pattern
One welding surface carries out scrub processing；After carrying out scrub processing, the backboard and the copper target material are started the cleaning processing；It completes
After the cleaning treatment, processing is dried to the backboard and the copper target material.
Optionally, in the step of decorative pattern is formed on first welding surface, the decorative pattern is screw thread；To being formed with decorative pattern
The first welding surface carry out scrub processing the step of include：Threadingly extending direction carries out the first welding surface for being formed with decorative pattern
Scrub is handled.
Optionally, the step of scrub processing is carried out to the first welding surface for being formed with decorative pattern includes：Using steel brush to being formed
The first welding surface for having decorative pattern carries out scrub processing.
Optionally, scrub processing step is carried out to the first welding surface for being formed with decorative pattern to include：To being formed with the of decorative pattern
One welding surface carries out scrub number of processing in 2 times to 4 underranges.
Optionally, the step of backboard starts the cleaning processing includes：It is clear that ultrasonic wave is carried out using backboard described in isopropanol
Wash processing.
Optionally, in the step of backboard starts the cleaning processing, scavenging period is in the range of 10min to 20min.
Optionally, after copper target material is provided, before being started the cleaning processing to the backboard and the copper target material, the formation
Method further includes：Planarization process is carried out to second welding surface.
Optionally, the step of carrying out planarization process to second welding surface includes：Vehicle is passed through using diamond blade
The mode cut carries out planarization process to second welding surface.
Optionally, the step of carrying out soldering to the initial component includes：By diffusion welding craft to described initial
Component carries out soldering.
Optionally, the step of carrying out soldering to the initial component includes：Vacuum packet is carried out to the initial component
Dress forms vacuum canning；Hot isostatic press welding work is carried out to the initial component in the vacuum canning and the vacuum canning
Skill forms the welding layer between the copper target material and the backboard.
Optionally, it is formed on first welding surface after the decorative pattern being made of multiple protrusions, described second is welded
Face is oppositely arranged with being formed with the first welding surface of decorative pattern and is bonded before forming initial component, and the manufacturing method further includes：
Processing is dried to the backboard and the copper target material；The drying process and time interval between being vacuum-packed are small
In or equal to 10min.
Optionally, the backboard and the withering step of copper target material are included：Using vacuum drying chamber pair
Processing is dried in the backboard and the copper target material, and vacuum degree is less than or equal to 0.01Pa.
Optionally, in the backboard and the withering step of copper target material, drying temperature is at 70 DEG C to 100
In the range of DEG C, drying time is in the range of 30min to 60min.
Optionally, the step of initial component being vacuum-packed includes：The initial component is fitted into jacket,
And the jacket is welded；Soldered jacket is vacuumized to form vacuum canning.
Optionally, in the step of being vacuumized soldered jacket to form vacuum canning, the vacuum canning
Interior vacuum degree is less than or equal to 0.001Pa.
Optionally, hot isostatic press welding technique is carried out to the initial component in the vacuum canning and the vacuum canning
The step of in, the temperature of hot isostatic pressing is 200 DEG C to 300 DEG C, and soaking time is in the range of 3 hours to 8 hours.
Optionally, hot isostatic press welding technique is carried out to the initial component in the vacuum canning and the vacuum canning
The step of in, the pressure of hot isostatic pressing is in the range of 90MPa to 200MPa.
Correspondingly, the present invention also provides a kind of copper target components as manufactured by copper target components manufacturing method of the present invention,
Including：Backboard；The welding layer being connected with the backboard；The copper target material being connected with the welding layer.
Compared with prior art, technical scheme of the present invention has the following advantages：
In technical solution of the present invention, the decorative pattern being made of multiple protrusions is formed on first welding surface；In weld
During reason, the protrusion in first welding surface is made to be embedded in second welding surface, in the copper target material and the back of the body
Welding layer is formed between plate, the thickness of the welding layer is greater than or equal to the height of the protrusion.The setting of the protrusion can
Effectively increase the contact area between first welding surface and the second welding surface, and the thickness of formed welding layer is more than
Or the height equal to the protrusion, it can effectively reduce and occur the possibility in gap in welding layer, so as to effectively change
The kind quality and performance for forming copper target components is conducive to improve the yield and performance of made semiconductor chip.
In alternative of the present invention, the decorative pattern formed on first welding surface is screw thread, and the protrusion is thread, and
And the height of the thread, in the range of 0.1mm to 1.5mm, the distance between adjacent thread is in the range of 0.2mm to 0.25mm.
By by distance between adjacent thread and the height of thread setting in the reasonable scope, can effectively increase the first welding surface and
The contact area of second welding surface, so as to improve the weld strength of copper target material and backboard；And the size of thread is arranged on conjunction
Way in the range of reason, after can making soldering, thread is completely embedded into second welding surface, so as to reduce described
The probability in gap is retained in welding layer, is conducive to improve the weld strength of copper target material and backboard.
In alternative of the present invention, during soldering is carried out to the initial component, arrived using temperature at 200 DEG C
Heat and other static pressuring processes in the range of 300 DEG C are welded；The pressure of hot isostatic pressing is in the range of 90MPa to 200MPa.Suitably
Technological temperature and pressure can realize the diffusion of atom between first welding surface and the second welding surface, improve copper target material
Weld strength between backboard；The problem of copper target crystalline grains are grown up can effectively be improved again, the appearance of copper target material can be reduced
Coarse grains phenomenon occurs, and is conducive to improve the performance and quality for forming copper target components.
In alternative of the present invention, after decorative pattern is formed, the first welding surface for being formed with decorative pattern is carried out using steel brush
Scrub is handled；Later, ultrasonic cleaning is carried out using isopropanol.To the first welding surface for being formed with decorative pattern carry out scrub processing and
The way of ultrasonic cleaning can effectively remove spot, rusty stain, residual and surface oxide layer on the second welding surface, energy
Enough cleannes for effectively improving second welding surface；The raising of second welding surface cleannes, is conducive to soldering process
In, the diffusion of atom between the first welding surface and the second welding surface is conducive to improve weld strength, improves the matter of copper target components
Amount and performance.
It in alternative of the present invention, is dried during being dried using vacuum drying chamber, and dried
Vacuum degree is less than or equal to 0.01Pa in journey；And it is vacuum-packed immediately after drying process, drying process and vacuum packet
Time interval between dress is less than or equal to 10min；And soldered jacket is being vacuumized to form vacuum packet
In the step of set, the vacuum degree in the vacuum canning is less than 0.001Pa.In the drying process after relatively low vacuum degree, drying
The timely vacuum degree being vacuum-packed and vacuum canning is relatively low, can effectively reduce contact of the copper target material with air,
So as to effectively reduce the possibility that copper target material is aoxidized, be conducive to improve the quality and performance for forming copper target components.
Description of the drawings
Fig. 1 is the flow diagram of one embodiment of copper target components manufacturing method of the present invention；
Fig. 2 to Fig. 9 is the structural representation corresponding to each step in the embodiment of copper target components manufacturing method shown in Fig. 1
Figure.
Specific embodiment
By background technology it is found that the hardness of copper target material is relatively low, the alloy backboard with high rigidity is needed to weld together composition
Copper target components can use.
Copper target components are made of the copper target of high-purity and the backboard of alloy material.It needs to weld the two in manufacturing process
It is connected together.Currently used welding manner mainly has two kinds of soldering and diffusion welding (DW).
For the copper target components manufactured by soldering process, since the fusing point of tin is relatively low, high temperature resistance is poor, works as copper target
When material component uses board temperature higher, the phenomenon that being susceptible to solder fusing, so as to easily increase the risk of product desoldering.
Diffusion welding (DW) be a kind of high temperature, high intensity welding manner.But if the temperature of diffusion welding (DW) is too high, copper target is in high temperature
Lower crystal grain is easily grown up, and copper target is caused the phenomenon that coarse grains occur.Copper target coarse grains can be to formed interconnection structure, conducting wire
Line width and uniformity adversely affect, influence the performance of formed semiconductor chip.Therefore copper target is manufactured using diffusion welding (DW)
During material component, technological temperature cannot be too high.
But during diffusion welding (DW), relatively low technological temperature is unfavorable for improving the weld strength between copper target and backboard.Institute
In order to realize that the low temperature diffusion of copper target components is welded, to need to increase the contact area of welding surface.A kind of method is exactly to carry on the back
The screw thread of certain specification is formed on the welding surface of plate, to increase the contact area between flesh backboard welding surface and target welding surface.With
The progress of diffusion welding craft, the thread on backboard welding surface can be embedded in the welding surface of target, so as to form welding layer, realized
Backboard is connected with the combination of target.
But the specification that the prior art forms thread can not meet technology requirement, and after diffusion welding craft, backboard weldering
Thread in junction can not be completely embedded into the welding surface of target, therefore is susceptible to gap in the welding layer formed, so as to
The quality and performance of formed copper target components are affected, and then easily the yield and performance of formed semiconductor chip are caused
Detrimental effect.
To solve the technical problem, the present invention provides a kind of manufacturing method of copper target components, including：
Backboard and copper target material are provided, the backboard includes the first welding surface, and the copper target material includes the second welding surface；Institute
State the decorative pattern that formation is made of multiple protrusions on the first welding surface；By second welding surface and the first welding for being formed with decorative pattern
Face is oppositely arranged and is bonded to form initial component；Soldering is carried out to the initial component, is made in first welding surface
In embedded second welding surface of protrusion, welding layer, the thickness of the welding layer are formed between the copper target material and the backboard
Degree is greater than or equal to the height of the protrusion, to obtain copper target components.
In technical solution of the present invention, the decorative pattern being made of multiple protrusions is formed on first welding surface；In weld
During reason, the protrusion in first welding surface is made to be embedded in second welding surface, in the copper target material and the back of the body
Welding layer is formed between plate, the thickness of the welding layer is greater than or equal to the height of the protrusion.The setting of the protrusion can
Effectively increase the contact area between first welding surface and the second welding surface, and the thickness of formed welding layer is more than
Or the height equal to the protrusion, it can effectively reduce and occur the probability in gap in welding layer, so as to effectively change
The kind quality and performance for forming copper target components is conducive to improve the yield and performance of made semiconductor chip.
It is understandable for the above objects, features and advantages of the present invention is enable to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
With reference to figure 1, the flow diagram of one embodiment of copper target components manufacturing method of the present invention is shown.
With reference to referring to figs. 2 to Fig. 9, show that each step institute is right in the embodiment of copper target components manufacturing method shown in Fig. 1
The structure diagram answered.
With reference to referring to figs. 1 to Fig. 3, step S100 is performed, provides backboard 100 and copper target material 200, the backboard 100 includes
First welding surface 110, the copper target material 200 include the second welding surface 210.
The backboard 100 plays the role of support for welding together with the copper target material 200；And the backboard
100 have good electric conductivity, with meet formation target material assembly conductivity demand；In addition, the thermal conductivity of the backboard 100
Can be good, heat dissipation can be played the role of in sputtering process, prevent target temperature excessively high.
In the present embodiment, the material of the backboard 100 is ormolu.Ormolu has good mechanical performance, and
And heat resistance and processing performance are preferable, therefore, are conducive to raising using the backboard 100 of ormolu and are formed copper target material group
The performance and quality of part.In other embodiments of the invention, the material of the backboard 100 can also be chromiumcopper.
In semiconductor fabrication, copper is widely used in forming the interconnection structures such as interconnection line or plug.200 quilt of copper target material
For in the depositing operation of metallic copper.In the present embodiment, by mass percentage, the purity of the copper target material 200 is more than
99.99%, so the hardness of copper target material 200 is relatively low, need to weld use with backboard 100.
The shape of the copper target material 200 is cylinder.In other embodiments of the invention, the shape of the copper target material 200 can
With according to application environment and sputtering requirement presentation cuboid, annulus cylindricality, cone or any other rule or irregularly
Shape.Correspondingly, in the present embodiment, the shape of the backboard 100 is also cylinder.
With continued reference to Fig. 1, with reference to reference to figure 4, Fig. 5 and Fig. 6, S200 is continued to execute, the shape on first welding surface 110
Into the decorative pattern 111 being made of multiple protrusions.Wherein, Fig. 5 shows in embodiment described in Fig. 4 and illustrates along the sectional structure of AA lines
Figure, Fig. 6 is the enlarged structure schematic diagram of dotted line frame B inner structures in Fig. 5.
The decorative pattern 111 is used to increase the contact surface between first welding surface 110 and second welding surface 210
Product；Subsequent soldering makes the protrusion of composition decorative pattern 111 be embedded in second welding surface 210, so as to increase the backboard
Bonding strength between 100 and the copper target material 200.
The size of 111 protrusions of decorative pattern is suitable, can either effectively increase first welding surface 110 and described second
Contact area between welding surface 210, but during can ensureing follow-up soldering, protrusion can be completely embedded into described second
It in welding surface 210, reduces and occurs the possibility in gap in formed welding layer, so as to effectively improve formed copper target material
The quality and performance of component.
As shown in figure 4, in the present embodiment, in the step of decorative pattern 111 are formed on first welding surface 110, the flower
Line 111 is flat thread, and the protrusion is the thread of the screw thread.The backboard 100 is cylinder, that is to say, that described the
One welding surface 110 is circle.Therefore the decorative pattern 111 is set as to the way of flat thread, can reduce to form decorative pattern 111
Technology difficulty；And the decorative pattern 111, when being flat thread, the gap between thread is continuous, after initial component is formed,
Continuous spiral shell interdental space can be conducive to the discharge of gas between backboard 100 and copper target material 200, be conducive to improve welding process
In vacuum degree.
As shown in figure 5, for effective area increased, increase protrusion described in welding process and second welding surface 210
Between pressure, the thread forms flat thread by solid matter, that is to say, that close-packed arrays between thread.In addition, described
In the step of decorative pattern 111 are formed on first welding surface 110, in the section of normal thread extending direction, the size edge of the thread
It is gradually reduced backwards to the direction of the backboard 100.This way, can effectively increase described in welding process protrusion with it is described
Pressure between second welding surface 210.Specifically, in the step of decorative pattern 111 are formed on first welding surface 110, vertically
In the section of screw thread extending direction, the shape of the thread is equilateral triangle.
So in the present embodiment, Formation cross-section is the groove of up-side down triangle between adjacent thread.Between adjacent thread distance D with
The ratio of thread height H should not it is too big also should not be too small.
If distance D and the ratio of thread height H are too small between adjacent thread, thread height H is excessive, and it is complete to be unfavorable for thread
It is embedded in 210 in second welding surface entirely, and the excessive also easy appearance for increasing thread damaged phenomenon of thread height H, easily
There is snaggletooth phenomenon；If the ratio of distance D and thread height H is too big between adjacent thread, it is possible that thread is excessively dilute
It dredges, is unfavorable for increasing the contact area between 110 and second welding surface 210 of the first welding surface, nor conducive to increase
Pressure between the thread and the second welding surface 210 is unfavorable for thread and is embedded in second welding surface 210.Specifically, this
In embodiment, the ratio of distance D and thread height H is in the range of 1.2 to 2.5 between adjacent thread.
Specifically, as shown in fig. 6, in the present embodiment, in the step of decorative pattern 111 are formed on first welding surface 110,
The height H of the thread is in the range of 0.1mm to 1.5mm, and the distance between adjacent thread D is in the range of 0.2mm to 0.25mm.
If the height H of the thread is too small, the depth that soldering rear projection is embedded in the second welding surface 210 is too small,
It can influence the bonding strength between the backboard 100 and the copper target material 200；If the height H of the thread is too big, can shadow
The phenomenon that intensity of sound thread, thread is easily damaged, is susceptible to snaggletooth in the welding process, so as to influence formed copper target material
The quality and property of component.
If the distance between adjacent thread D is too small, thread density is excessive, and it is too small or excessive to be easy to cause thread height
The problem of, so as to influence the quality of formed copper target components and property；If the distance between adjacent thread D is too big, spiral shell
Tooth density is too small, and it is too small to be easy to cause thread quantity, influences that decorative pattern 111 increases the first welding surface 110 and the second welding surface 210 connects
The effect of contacting surface product, and then influence to be formed the quality and property of copper target components.
By the way that distance between adjacent thread and the height of thread are set in the reasonable scope, it can effectively increase by first
The contact area of 110 and second welding surface 210 of welding surface, so as to improve the weld strength of copper target material 200 and backboard 100；And
By the way of the size setting of thread in the reasonable scope, after can making soldering, thread is completely embedded into second weldering
In junction 210, the possibility that gap is retained in the welding layer is reduced, is conducive to improve the welding of copper target material 200 and backboard 100
Intensity.
Specifically, include in the step of formation decorative pattern 111 on first welding surface 110：In institute by way of turning
State formation decorative pattern 111 on the first welding surface 110.
With continued reference to Fig. 1, with reference to reference to figure 5, step S300 is performed, by second welding surface 210 and is formed with decorative pattern
111 the first welding surface 110 is oppositely arranged and is bonded to form initial component 300.
The step of forming initial component 300 is used to provide Process ba- sis for subsequent process steps.Specifically, by the backboard
100 is horizontal positioned, and first welding surface 110 is set upward；The copper target material 200 is positioned on the backboard 100, and is made
Second welding surface 210 is opposite with first welding surface 110 to be bonded, and forms the initial component 300.
It should be noted that the finish and flatness of first welding surface 110 and second welding surface 210 can shadows
Follow-up solder bond rate and bond strength between the backboard 100 and the copper target material 200 is rung, therefore improves first weldering
The finish and flatness of junction 110 and second welding surface 210 improve first welding surface 110 and second weldering
The quality of junction 210 can provide good interfacial state for subsequent soldering technique, so as to be conducive to improve solder bond
Rate and bond strength are conducive to improve the quality and performance for forming copper target components.
So in the present embodiment, formed after decorative pattern 111 on first welding surface 110, by second welding surface
210 are oppositely arranged and are bonded before forming initial component 300, the manufacturer with being formed with the first welding surface 110 of decorative pattern 111
Method further includes：Step S211 is performed, scrub processing is carried out to the first welding surface 110 for being formed with decorative pattern 111；Perform step
S212, after carrying out scrub processing, the backboard 100 and the copper target material 200 start the cleaning processing；Complete the cleaning treatment
Later, step S213 is performed, processing is dried to the backboard 100 and the copper target material 200.
It since copper is oxidizable, easily gets rusty, therefore scrub processing is carried out to the first welding surface 110 for being formed with decorative pattern 111
Step is used to remove the rusty stain on first welding surface 110, for removing the solid spot on 111 surface of decorative pattern.Therefore
In the present embodiment, the step of scrub is handled is carried out to the first welding surface 110 for being formed with decorative pattern 111 and is included：Using steel brush to shape
Scrub processing is carried out into the first welding surface 110 for having decorative pattern 111.
Further, since the decorative pattern 111 is screw thread, first welding surface 110 is damaged in order to reduce the scrub processing
The possibility of upper decorative pattern 111, so as to improve the weld strength between the backboard 100 and the copper target material 200, to being formed with decorative pattern
111 the first welding surface 110 include the step of scrubbing processing：Threadingly extending direction is to being formed with the first of decorative pattern 111
Welding surface 110 carries out scrub processing.
It should be noted that it is not many that scrub number of processing is carried out to the first welding surface 110 for being formed with decorative pattern 111
It is unsuitable very little.
If it is very little that scrub number of processing is carried out to the first welding surface 110 for being formed with decorative pattern 111, rusty stain can be influenced
Removal, the residual of rusty stain can influence the weld strength between the backboard 100 and the copper target material 200, influence formed copper
The quality and property of target material assembly；If scrub number of processing is carried out to the first welding surface 110 for being formed with decorative pattern 111 too
It is more, then it can increase the impaired possibility of decorative pattern 111, be unfavorable for follow-up welding process protrusions and be embedded in second welding surface 210,
It is unfavorable for improving the weld strength between the backboard 100 and the copper target material 200.In the present embodiment, to being formed with decorative pattern 111
The first welding surface 110 carry out scrub processing step include：The first welding surface 110 for being formed with decorative pattern 111 is carried out at scrub
The number of reason is in 2 times to 4 underranges.
In addition, in the present embodiment, after providing copper target material 200, by second welding surface 210 with forming threaded the
One welding surface 110 is oppositely arranged and is bonded before forming initial component 300, and the forming method further includes：It is welded to described second
Junction 210 carries out planarization process.Specifically, the step of carrying out planarization process to second welding surface 210 includes：Using
Diamond blade carries out planarization process by way of turning to second welding surface 210.
The step of being started the cleaning processing to the backboard 100 and the copper target material 200 is used to improve first welding surface
110 and second welding surface 210 cleannes.In the present embodiment, the backboard 100 and the copper target material 200 start the cleaning processing
The step of include：Ultrasonic cleaning processing is carried out to the backboard 100 and the copper target material 200 using isopropanol (IPA).Isopropyl
Alcohol ultrasonic cleaning can effectively remove first welding surface 110 and dust on second welding surface 210, particle or
It is water stain.
It should be noted that the scavenging period of cleaning treatment is unsuitable too short, it is also unsuitable long.
If scavenging period is too short, it is difficult to ensure that cleaning performance, that is, removes first welding surface 110 and second and weld
Dust, particle or water stain effect are poor on face 210, are welded so as to be easy to cause follow-up first welding surface 110 and second
The solder bond rate in face 210 declines, weld strength declines；If scavenging period is long, the backboard 100 and the copper target material
200 overlong time in isopropanol easily increases process risk, and process time long also easy extend manufactures week
Phase is unfavorable for low production efficiency raising.For this purpose, in the present embodiment, the backboard 100 and the copper target material 200 are carried out at cleaning
In the step of reason, scavenging period is in the range of 10min to 20min.
The backboard 100 and 200 withering step of the copper target material are used to remove the backboard 100 and institute
State the cleaning solution of 200 remained on surface of copper target material.
Specifically, since copper is oxidizable, so to 200 withering step of the backboard 100 and the copper target material
Suddenly include：Processing is dried to the backboard 100 and the copper target material 200 using vacuum drying chamber, vacuum degree is less than or waits
In 0.01Pa.Relatively low vacuum degree can effectively reduce the backboard 100 and the copper target material 200 by oxygen in the drying process
The possibility of change is conducive to improve the quality and performance for forming copper target components.
The drying temperature of the drying process and drying time need reasonable set and mutual cooperation, so as to ensure have compared with
While good drying effect, process risk is reduced, improves manufacture efficiency.
The drying temperature is unsuitable too low, also unsuitable excessively high.
If drying temperature is too low, the corresponding process time realized needed for drying effect is longer, so as to reduce manufacture efficiency；
If drying temperature is excessively high, easily accelerate the oxidation of copper, the performance of the backboard 100 and the copper target material 200 is generated not
Good influence.
Drying time under the drying temperature is unsuitable too short, also unsuitable long.
If drying time is too short, be easy to cause to the drying effect of the backboard 100 and the copper target material 200 compared with
Difference；If drying time is long, the process time is wasted instead, and easily increase process risk after drying effect is realized.
So in the present embodiment, in 200 withering step of the backboard 100 and the copper target material, drying
Temperature is in the range of 70 DEG C to 100 DEG C, and drying time is in the range of 30min to 60min.
With continued reference to Fig. 1, with reference to reference to figure 7 to Fig. 9, execution step S400 carries out soldering to the initial component,
The protrusion in first welding surface 110 (as shown in Figure 5) is made to be embedded in second welding surface 210 (as shown in Figure 5), in institute
Formation welding layer 410 between copper target material 200 and the backboard 100 is stated, the thickness of the welding layer 410 is more than or equal to described convex
The height risen, to obtain copper target components.
The soldering is for making the backboard 100 and the copper target material 200 realize connection, to form copper target material group
Part.In the present embodiment, the step of initial component progress soldering, is included：By diffusion welding craft to the initial group
Part carries out soldering.
Specifically, the step of carrying out soldering to the initial component includes：Vacuum packet is carried out to the initial component
Dress forms vacuum canning 310；It is quiet that heat etc. is carried out to the initial component in the vacuum canning 310 and the vacuum canning 310
Welding procedure 320 is pressed, the welding layer 410 is formed between the copper target material 200 and the backboard 100.
It should be noted that in the present embodiment, since the manufacturing method further includes：To the backboard 100 and the copper
Processing is dried in target 200, so the drying process and the time interval between being vacuum-packed are less than or equal to
10min.The backboard 100 and the copper target material 200 and air can effectively be reduced by carrying out vacuum packaging after drying in time
Contact so as to effectively reduce the possibility that the backboard 100 and the copper target material 200 are aoxidized, is conducive to improve institute's shape
Into the quality and performance of copper target components.
The vacuum canning 310 provides vacuum environment for subsequent technique.
The step of initial component is vacuum-packed includes：The initial component is fitted into jacket, and to institute
Jacket is stated to be welded；Soldered jacket is vacuumized to form vacuum canning 310.
It should be noted that after the initial component is packed into jacket, it is described before being vacuumized to the jacket
Manufacturing method further includes：The jacket is shut by welding, and a deaeration pipe is drawn in the jacket；Butt welding
The jacket for connecing completion is vacuumized and is included the step of vacuum canning 310 with being formed：By the deaeration pipe to soldered
Jacket is vacuumized to form vacuum canning 310.
In the present embodiment, the jacket includes side wall, lower cover and upper cover plate.Since the jacket is by welding fabrication,
So the intensity of the jacket is larger, it is possible to reduce deformation or cracking occurs in jacket during hot isostatic press welding technique 320
Problem.
The process that the jacket is shut is included by welding：The side wall and the lower cover are first welded into phase
Even；Initial component loading is not provided in the jackets such as upper cover plate later, covers the jacket upper cover plate；On finally will be described
Cover board is connected with the sidewall weld, forms jacket.
It is described true in the step of being vacuumized to soldered jacket to form vacuum canning 310 in the present embodiment
Vacuum degree in empty jacket 310 is less than or equal to 0.001Pa.The relatively low vacuum degree of vacuum canning 310 can effectively reduce institute
The possibility that backboard 100 and the copper target material 200 are aoxidized is stated, is conducive to improve the quality and performance for forming copper target components.
To the vacuum canning 310 carry out heat and other static pressuring processes the step of by certain temperature to the vacuum canning
310 apply pressure, make atom between first welding surface 110 and second welding surface 210 that mutually shield diffusion occur, so as to make
In embedded second welding surface 210 of protrusion, the welding layer 410 is formed.
In the present embodiment, it is quiet that heat etc. is carried out to the initial component in the vacuum canning 310 and the vacuum canning 310
In the step of pressing welding procedure 320, the pressure of the temperature of hot isostatic pressing, soaking time and hot isostatic pressing has done taking of optimizing
Match.
If the temperature of hot isostatic pressing is too low, since temperature is inadequate, then first welding surface 110 and described can be influenced
The diffusion of atom between two welding surfaces 210, so as to cause difficult between first welding surface 110 and second welding surface 210
With thorough diffusion bond, the protrusion is difficult to be completely embedded into the welding layer 410, so as to form seam in the welding layer 410
Gap, and then the decline of solder bond rate, weld strength is caused to decline；If the temperature of hot isostatic pressing is too high, due to copper high temperature
Lower crystal grain is easily grown up, then can increase the copper target material 200 and the possibility of coarse grains phenomenon occur, can influence the copper target material group
The quality and performance of part, and the excessively high vacuum canning 310 that also easily causes of temperature deforms upon or cracks, and may make what is more
The vacuum canning 310 melts or the vacuum canning 310 is made to react with the backboard 100 or the copper target material 200,
And cause scrapping for copper target components.So in the present embodiment, in the vacuum canning 310 and the vacuum canning 310
Initial component the step of carrying out hot isostatic press welding technique 320 in, the temperature of hot isostatic pressing is 200 DEG C to 300 DEG C.
If the pressure of hot isostatic pressing is too small, since the power applied in the vacuum packet 310 is not big enough, then described first
Welding surface 110 and second welding surface 210 are difficult to thoroughly be diffused combination, and the protrusion is difficult to be completely embedded into the weldering
Layer 410 is connect, so as to form gap in the welding layer 410, and then the decline of solder bond rate, weld strength is caused to decline,
Cause the copper target components that desoldering problem easily occurs；If the pressure of hot isostatic pressing is too big, best for having reached
The initial component of diffusion bond effect, it is difficult to further diffusion bond, then to improve pressure nonsensical, wastes instead
The energy or even excessively high pressure may make the vacuum canning 310 deform upon or crack.So in the present embodiment, to described
In the step of initial component in vacuum canning 310 and the vacuum canning 310 carries out hot isostatic press welding technique 320, heat
The pressure of isostatic pressed is in the range of 90MPa to 200MPa.
If soaking time is too short, falls short of, then easily lead due to applying the stressed time under proper temperature and pressure
First welding surface 110 and second welding surface 210 is caused to be difficult to thoroughly be diffused combination, the protrusion is difficult to completely
The embedded welding layer 410 so as to form gap in the welding layer 410, and then leads to the decline of solder bond rate, welding
Intensity declines, and causes the copper target components that desoldering problem easily occurs；If soaking time is too long, for having reached most
The initial component of good diffusion bond effect, it is difficult to which further diffusion bond is further added by soaking time waste of energy, drop instead
The manufacture efficiency of low target material assembly.So in the present embodiment, in the vacuum canning 310 and the vacuum canning 310
Initial component was carried out in the step of hot isostatic press welding technique 320, and soaking time is in the range of 3 hours to 8 hours
During soldering is carried out to the initial component, temperature, soaking time and heat of hot isostatic pressing etc. are quiet
The pressure of pressure cooperates, and can realize the diffusion of atom between first welding surface 110 and second welding surface 210,
Improve the weld strength between copper target material 200 and backboard 100；The problem of 200 crystal grain of copper target material is grown up can effectively be improved again,
Copper target material 200 can be reduced and the appearance of coarse grains phenomenon occur, be conducive to improve the performance and quality for forming copper target components.
It should be noted that after the heat and other static pressuring processes are completed, the manufacturing method further includes：To the vacuum packet
Set 310 carries out pressure cooling；After cooling, by mechanical processing techniques such as turnery processings, the copper target components surface packet is removed
The material of set.
Specifically, the step of pressure cooling is carried out to the vacuum canning 310 includes：To institute by the way of furnace cooling
It states vacuum canning 310 and carries out pressure cooling.This way can improve because the rapid drawdown of temperature causes the backboard 100 and the copper
The problem of target 200 is broken, makes obtained copper target components more solid.
It should be noted that in the present embodiment, formed after initial component, the step of welding to the initial component
Including：Soldering is carried out to the initial component by diffusion welding craft.But the invention is not limited in this regard, in other realities
It applies in example, other welding procedure modes can also be used to carry out soldering to the initial component.
Correspondingly, the present invention also provides a kind of copper target components manufactured by copper target components manufacturing method of the present invention.Ginseng
Fig. 9 is examined, shows the cross-sectional view of one embodiment of copper target components.
The copper target components include：Backboard 100；The welding layer 410 being connected with the backboard 100；With the welding layer
410 connected copper target materials 200.
Since the copper target components are copper target components manufacturing method of the present invention manufacture, the backboard 100 first welds
Protrusion in junction 110 is completely embedded into second welding surface 210, therefore the thickness of the welding layer 410 is greater than or equal to
There is the possibility in gap, so as to effectively improve so can effectively reduce in the height of the protrusion in welding layer 410
The quality and performance of the copper target components are conducive to improve the yield and performance of made semiconductor chip.
To sum up, in technical solution of the present invention, the decorative pattern being made of multiple protrusions is formed on first welding surface；It is welding
During connecing processing, the protrusion in first welding surface is made to be embedded in second welding surface, in the copper target material and institute
It states and welding layer is formed between backboard, the thickness of the welding layer is greater than or equal to the height of the protrusion.The setting of the protrusion
The contact area between first welding surface and the second welding surface, and the thickness of formed welding layer can effectively be increased
More than the height of the protrusion, the possibility for occurring gap in welding layer can be effectively reduced, so as to effectively improve
The quality and performance of formed copper target components are conducive to improve the yield and performance of made semiconductor chip.Moreover, this hair
In bright alternative, the decorative pattern that is formed on first welding surface is screw thread, and the protrusion is thread, and the thread
Height is in the range of 0.1mm to 1.5mm, and the distance between adjacent thread is in the range of 0.2mm to 0.25mm.By by adjacent spiral shell
Distance and the setting of the height of thread in the reasonable scope, can effectively increase the first welding surface and the second welding surface between tooth
Contact area, so as to improve the weld strength of copper target material and backboard；And the doing in the reasonable scope by the setting of the size of thread
Method, after can making soldering, thread is completely embedded into second welding surface, is reduced and is retained gap in the welding layer
Probability, be conducive to improve the weld strength of copper target material and backboard.In addition, in alternative of the present invention, to the initial group
During part carries out soldering, welded using heat and other static pressuring processes of the temperature in the range of 200 DEG C to 300 DEG C；Heat etc.
The pressure of static pressure is in the range of 90MPa to 200MPa.Suitable technological temperature and pressure, can realize first welding surface
And second atom between welding surface diffusion, improve the weld strength between copper target material and backboard；Copper can effectively be improved again
The problem of target crystalline grains are grown up can reduce copper target material and the appearance of coarse grains phenomenon occur, be conducive to raising and form copper target material
The performance and quality of component.In addition, in alternative of the present invention, after decorative pattern is formed, to being formed with the first welding of decorative pattern
Face carries out scrub processing using steel brush；Later, ultrasonic cleaning is carried out using isopropanol.To being formed with the first welding surface of decorative pattern
Carry out the way of scrub processing and ultrasonic cleaning, can effectively remove spot on the second welding surface, rusty stain, residual and
Surface oxide layer can effectively improve the cleannes of second welding surface；The raising of second welding surface cleannes, is conducive to
During soldering, the diffusion of atom between the first welding surface and the second welding surface is conducive to improve weld strength, improves copper
The quality and performance of target material assembly.In addition, in alternative of the present invention, during being dried using vacuum drying chamber into
Row drying, and vacuum degree is less than or equal to 0.01Pa in drying process；And be vacuum-packed immediately after drying process,
The time interval being dried between vacuum packaging is less than or equal to 10min；And it is taken out to soldered jacket
In the step of vacuum is to form vacuum canning, the vacuum degree in the vacuum canning is less than 0.001Pa.It is relatively low in the drying process
Vacuum degree, it is dry after be vacuum-packed in time and vacuum degree that vacuum canning is relatively low, can effectively reduce copper target
Contact of the material with air so as to effectively reduce the possibility that copper target material is aoxidized, is conducive to raising and forms copper target material group
The quality and performance of part.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (28)
1. a kind of manufacturing method of copper target components, which is characterized in that including：
Backboard and copper target material are provided, the backboard includes the first welding surface, and the copper target material includes the second welding surface；
The decorative pattern being made of multiple protrusions is formed on first welding surface；
Second welding surface is oppositely arranged and is bonded to form initial component with being formed with the first welding surface of decorative pattern；
Soldering is carried out to the initial component, the protrusion in first welding surface is made to be embedded in second welding surface,
Welding layer is formed between the copper target material and the backboard, the thickness of the welding layer is greater than or equal to the height of the protrusion
Degree, to obtain copper target components.
2. manufacturing method as described in claim 1, which is characterized in that in the step of providing backboard, the material of the backboard is
Ormolu or chromiumcopper.
3. manufacturing method as described in claim 1, which is characterized in that in the step of copper target material is provided, by mass percentage, institute
The purity for stating copper target material is more than 99.99%.
4. manufacturing method as described in claim 1, which is characterized in that on first welding surface formed decorative pattern the step of
In, the decorative pattern is flat thread, and the protrusion is the thread of the screw thread.
5. manufacturing method as claimed in claim 4, which is characterized in that the ratio of distance and thread height exists between adjacent thread
In the range of 1.2 to 2.5.
6. manufacturing method as claimed in claim 4, which is characterized in that on first welding surface formed decorative pattern the step of
In, the height of the thread is in the range of 0.1mm to 1.5mm.
7. manufacturing method as claimed in claim 4, which is characterized in that on first welding surface formed decorative pattern the step of
In, the distance between adjacent thread is in the range of 0.2mm to 0.25mm.
8. manufacturing method as claimed in claim 4, which is characterized in that on first welding surface formed decorative pattern the step of
In, in the section of normal thread extending direction, the size of the thread is gradually reduced along the direction backwards to the backboard.
9. manufacturing method as claimed in claim 8, which is characterized in that on first welding surface formed decorative pattern the step of
In, in the section of normal thread extending direction, the shape of the thread is equilateral triangle.
10. manufacturing method as described in claim 1, which is characterized in that on first welding surface formed decorative pattern the step of
Including：By way of turning the decorative pattern is formed on first welding surface.
11. manufacturing method as described in claim 1, which is characterized in that it is formed after decorative pattern on first welding surface, it will
Second welding surface is oppositely arranged and is bonded before forming initial component, the manufacture with being formed with the first welding surface of decorative pattern
Method further includes：
Scrub processing is carried out to the first welding surface for being formed with decorative pattern；
After carrying out scrub processing, the backboard and the copper target material are started the cleaning processing；
After completing the cleaning treatment, processing is dried to the backboard and the copper target material.
12. manufacturing method as claimed in claim 11, which is characterized in that on first welding surface formed decorative pattern the step of
In, the decorative pattern is screw thread；
The step of scrub processing is carried out to the first welding surface for being formed with decorative pattern includes：Threadingly extending direction is to being formed with decorative pattern
The first welding surface carry out scrub processing.
13. manufacturing method as claimed in claim 11, which is characterized in that scrubbed to the first welding surface for being formed with decorative pattern
The step of processing, includes：Scrub processing is carried out to the first welding surface for being formed with decorative pattern using steel brush.
14. manufacturing method as claimed in claim 11, which is characterized in that scrubbed to the first welding surface for being formed with decorative pattern
Processing step includes：Scrub number of processing is carried out to the first welding surface for being formed with decorative pattern in 2 times to 4 underranges.
15. manufacturing method as claimed in claim 11, which is characterized in that the step of backboard starts the cleaning processing includes：
Ultrasonic cleaning processing is carried out using backboard described in isopropanol.
16. manufacturing method as claimed in claim 11, which is characterized in that in the step of backboard starts the cleaning processing, clearly
The time is washed in the range of 10min to 20min.
17. manufacturing method as claimed in claim 11, which is characterized in that after providing copper target material, to the backboard and described
Before copper target material starts the cleaning processing, the forming method further includes：Planarization process is carried out to second welding surface.
18. manufacturing method as claimed in claim 17, which is characterized in that planarization process is carried out to second welding surface
Step includes：Planarization process is carried out to second welding surface in a manner that diamond blade is by turning.
19. manufacturing method as described in claim 1, which is characterized in that the step of soldering is carried out to the initial component
Including：Soldering is carried out to the initial component by diffusion welding craft.
20. manufacturing method as described in claim 1, which is characterized in that the step of soldering is carried out to the initial component
Including：
The initial component is vacuum-packed, forms vacuum canning；
Hot isostatic press welding technique is carried out to the initial component in the vacuum canning and the vacuum canning, in the copper target
The welding layer is formed between material and the backboard.
21. manufacturing method as claimed in claim 20, which is characterized in that formed on first welding surface by multiple protrusions
After the decorative pattern of composition, second welding surface is oppositely arranged with being formed with the first welding surface of decorative pattern and be bonded to be formed it is initial
Before component, the manufacturing method further includes：Processing is dried to the backboard and the copper target material；
The drying process and the time interval between being vacuum-packed are less than or equal to 10min.
22. the manufacturing method as described in claim 11 or 21, which is characterized in that done to the backboard and the copper target material
The step of dry processing, includes：Processing is dried to the backboard and the copper target material using vacuum drying chamber, vacuum degree is less than
Or equal to 0.01Pa.
23. the manufacturing method as described in claim 11 or 21, which is characterized in that done to the backboard and the copper target material
In the step of dry processing, drying temperature is in the range of 70 DEG C to 100 DEG C, and drying time is in the range of 30min to 60min.
24. manufacturing method as claimed in claim 20, which is characterized in that the step of initial component is vacuum-packed
Including：
The initial component is fitted into jacket, and the jacket is welded；
Soldered jacket is vacuumized to form vacuum canning.
25. manufacturing method as claimed in claim 24, which is characterized in that vacuumized to be formed to soldered jacket
In the step of vacuum canning, the vacuum degree in the vacuum canning is less than or equal to 0.001Pa.
26. manufacturing method as claimed in claim 20, which is characterized in that in the vacuum canning and the vacuum canning
Initial component the step of carrying out hot isostatic press welding technique in, the temperature of hot isostatic pressing is 200 DEG C to 300 DEG C, soaking time
In the range of 3 hours to 8 hours.
27. manufacturing method as claimed in claim 20, which is characterized in that in the vacuum canning and the vacuum canning
Initial component carry out hot isostatic press welding technique the step of in, the pressure of hot isostatic pressing is in the range of 90MPa to 200MPa.
28. a kind of manufacturing method institute of copper target components as described in any one of claim 1 to claim 27 claim
The copper target components of manufacture, which is characterized in that including：
Backboard；
The welding layer being connected with the backboard；
The copper target material being connected with the welding layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611163765.2A CN108213855A (en) | 2016-12-15 | 2016-12-15 | Copper target components and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611163765.2A CN108213855A (en) | 2016-12-15 | 2016-12-15 | Copper target components and its manufacturing method |
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| CN109570931A (en) * | 2018-12-08 | 2019-04-05 | 东曹(上海)电子材料有限公司 | A kind of production method of large scale flat-panel monitor sputtering target material |
| CN110369897A (en) * | 2019-08-06 | 2019-10-25 | 宁波江丰电子材料股份有限公司 | A kind of welding method of target and backboard |
| CN110539067A (en) * | 2019-09-16 | 2019-12-06 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for high-purity copper target |
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| CN111304604A (en) * | 2020-03-03 | 2020-06-19 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for copper target and aluminum alloy back plate and prepared copper target assembly |
| CN112676782A (en) * | 2020-12-25 | 2021-04-20 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and copper back plate |
| CN112676782B (en) * | 2020-12-25 | 2023-04-07 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and copper back plate |
| CN112959010A (en) * | 2021-02-18 | 2021-06-15 | 宁波江丰电子材料股份有限公司 | Method for assembling target and copper back plate |
| CN113210832A (en) * | 2021-06-02 | 2021-08-06 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for aluminum-scandium alloy target |
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Application publication date: 20180629 |