CN107570826B - The manufacturing method of target material assembly - Google Patents
The manufacturing method of target material assembly Download PDFInfo
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- CN107570826B CN107570826B CN201610538202.0A CN201610538202A CN107570826B CN 107570826 B CN107570826 B CN 107570826B CN 201610538202 A CN201610538202 A CN 201610538202A CN 107570826 B CN107570826 B CN 107570826B
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Abstract
The present invention provides a kind of manufacturing method of target material assembly, comprising: provides titanium target base and backboard, the surface to be welded of titanium target base is the first welding surface, and the surface to be welded of backboard is the second welding surface；The first solder layer is coated on the first welding surface, the material of the first solder layer is the salvage material through using；The second solder layer is coated on the first solder layer, the material of the second solder layer is the material without using, and the material of the second solder layer and the first solder layer is identical；The first welding surface for being coated with the first solder layer and the second solder layer is oppositely arranged and is bonded with the second welding surface, target blankss is soldered on backboard by welding procedure, to form target material assembly.For the material for the first solder layer that the present invention uses for the salvage material through using, the material of the second solder layer is the material without using；Compared to a kind of single scheme using solder layer, the solder bond rate of target blankss and backboard is can be improved in the first solder layer and the second solder layer after mutually fusing.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to the manufacturing methods of target material assembly.
Background technique
Sputtering technology is one of conventional process of field of semiconductor manufacture, with increasingly developed, the sputtering target of sputtering technology
Material plays increasingly important role in sputtering technology, the quality of sputtering target material directly influenced after sputtering at film quality
Amount.
In sputtering target material manufacturing field, target material assembly is by meeting the target blankss of sputtering performance, passing through welding phase with target blankss
In conjunction with backboard constitute.In sputtering process, working environment locating for target material assembly is more severe.Such as: the back of target material assembly
Plate side is cold by force by the cooling water of certain pressure, and target blankss side is then under vacuum environment, therefore in target material assembly
Opposite sides form huge pressure difference；Furthermore bombardment of the target blankss side by various particles in high voltage electric field and high-intensity magnetic field,
There is amount of heat generation.Under such rugged environment, in order to ensure the stability of film quality and the quality of target material assembly,
The requirement of quality and solder bond rate to target blankss and backboard is higher and higher, is otherwise easy to cause the target material assembly heated
Under the conditions of the problems such as deforming, cracking, to influence quality of forming film, or even sputtering base is caused to damage.
But the solder bond rate of prior art target material assembly is to be improved.
Summary of the invention
Problems solved by the invention is to provide a kind of manufacturing method of target material assembly, to improve the welding knot of target blankss and backboard
Conjunction rate, and then improve the quality and performance of target material assembly.
To solve the above problems, the present invention provides a kind of manufacturing method of target material assembly.It include: that titanium target base and back are provided
Plate, the surface to be welded of the titanium target base are the first welding surface, and the surface to be welded of the backboard is the second welding surface；Described first
The first solder layer is coated on welding surface, the material of first solder layer is the salvage material through using；In first solder
The second solder layer is coated on layer, and the material of second solder layer is the material without using, and second solder layer and the
The material of one solder layer is identical；The first welding surface and described second for being coated with first solder layer and the second solder layer weld
Junction is oppositely arranged and is bonded, and the target blankss is soldered on the backboard by welding procedure, to form target material assembly.
Optionally, the material of the target blankss is high purity titanium.
Optionally, the material of the target blankss is ultra-pure titanium, and the mass percentage content of titanium is greater than or waits in ultra-pure titanium
In 99.999%.
Optionally, the material of the backboard is copper；Alternatively, the material of the backboard is the mixing material of copper and stainless steel.
Optionally, the material of first solder layer and the second solder layer is indium.
Optionally, before so that first welding surface is oppositely arranged and is bonded with second welding surface, the manufacturer
Method further include: first solder layer is coated on second welding surface；On the first solder layer of second welding surface
Coat second solder layer.
Optionally, including: the step of coating the first solder layer on first welding surface and the second welding surface will be described
Target blankss and backboard are placed in heating plate；The first solder is placed on first welding surface and the second welding surface respectively；Heating institute
Target blankss and backboard are stated, fusing is located at the first solder on first welding surface and the second welding surface, in first welding surface
It is in the first solder layer of melt flow stream shape with formation on the second welding surface.
It optionally, include: to set the target blankss and backboard the step of coating the second solder layer on first solder layer
In in heating plate；The second solder is placed on the first solder layer of first welding surface and the second welding surface；Heat the target
Base and backboard, fusing is located at the second solder on first solder layer, the second solder layer in melt flow stream shape is formed, and
Second solder layer and first solder layer mutually fuse.
Optionally, after coating the first solder layer on first welding surface and the second welding surface, in first solder
Before coating the second solder layer on layer, the manufacturing method further include: the first ultrasonication is carried out to the target blankss and backboard.
Optionally, the step of first ultrasonication includes: to carry out first ultrasound using ultrasonic oscillator
Wave processing, the power of the ultrasonic oscillator are 250W to 350W, and output frequency is 19KHz to 20KHz, and the processing time is 30
Minute was to 35 minutes.
Optionally, after coating the second solder layer on first solder layer, weld first welding surface and second
Before face is oppositely arranged and is bonded, the manufacturing method further include: the second ultrasonication is carried out to the target blankss and backboard.
Optionally, the step of second ultrasonication includes: to carry out second ultrasound using ultrasonic oscillator
Wave processing, the power of the ultrasonic oscillator are 250W to 350W, and output frequency is 19KHz to 20KHz, and the processing time is 30
Minute was to 35 minutes.
Optionally, after target blankss and backboard are provided, before coating the first solder layer on first welding surface, the manufacture
Method further include: Nickel Plating Treatment is carried out to first welding surface.
Optionally, the Nickel Plating Treatment is chemical nickel plating, the parameter of the Nickel Plating Treatment include: the nickel plating solution that uses for
The mixed solution of nickel sulfate, sodium citrate and sodium hypophosphite, the pH value of the nickel plating solution are 4.6 to 4.8, treatment temperature 86
DEG C to 90 DEG C.
Optionally, after welding procedure, the manufacturing method further include: to after welding target blankss and backboard cool down；In
In the cooling procedure, pressure is applied to the target blankss using briquetting.
Optionally, the quality of the briquetting is 22Kg to 25Kg, and cooling time is 2.5 hours to 3.5 hours.
Optionally, after cooling step, the manufacturing method further include: roughing and finishing are carried out to the target blankss and backboard
Work forms target material assembly.
Compared with prior art, technical solution of the present invention has the advantage that
Before the present invention makes first welding surface and the second welding surface be oppositely arranged and be bonded, applied on the first welding surface
The first solder layer is covered, coats the second solder layer on first solder layer, wherein the material of first solder layer is through making
Salvage material, activity is slightly worse, therefore oxidation rate is slower, furthermore in first solder layer doped with back veneer material at
Point, there is preferable effect of impregnation；In addition, metal failure is generally caused by crackle diffusion, and the material of second solder layer
For without the material used, clean metal impurity content is less, and internal flaw is less, to be unfavorable for the extension of crackle, therefore
Tensile strength is higher；Compared to a kind of single scheme using solder layer, first solder layer is coated on first welding surface
With the second solder layer, on the one hand can improve and the effect of impregnation of the first welding surface；On the other hand, the solder layer can also be avoided
The problem of welding effect caused by excessive oxidation declines, can further improve tensile strength, so as to improve the target
The solder bond rate of base and backboard.
In optinal plan, before so that first welding surface and the second welding surface is oppositely arranged and is bonded, also in the second weldering
The first solder layer is coated in junction, coats the second solder layer on the first solder layer of second welding surface；It is being welded
When, the solder layer on first welding surface and the second welding surface mutually fuses, to be conducive to improve the target blankss and backboard
Solder bond rate.
In optinal plan, the material of first solder layer and the second solder layer is identical.It therefore can be to avoid excessive impurity
Introducing, so as to improve first solder layer and the second solder layer combination effect, be conducive to improve fusion after solder
The tensile strength and effect of impregnation of layer, and then improve the solder bond rate of the target blankss and backboard；And in removal process, reduce
Recovery difficult improves the rate of recovery.
In optinal plan, after coating the first solder layer on first welding surface and the second welding surface, described first
Before coating the second solder layer on solder layer, the manufacturing method further include: the first ultrasonic wave is carried out to the target blankss and backboard
Processing.First ultrasonication is conducive to improve the effect of impregnation of first solder layer, make first solder layer with
First welding surface, the second welding surface preferably infiltrate；After forming target material assembly, the knot of first welding surface and the second welding surface
Conjunction property is stronger, is not susceptible to fall off.
In optinal plan, after coating the second solder layer on first solder layer, make first welding surface and second
Before welding surface is oppositely arranged and is bonded, the manufacturing method further include: the target blankss and backboard are carried out at the second ultrasonic wave
Reason.Second ultrasonication is used to improve the effect of impregnation of second solder layer, makes second solder layer and first
Welding surface, the second welding surface preferably infiltrate；And fuse second solder layer sufficiently with first solder layer, to improve
First solder layer and the second solder layer mutually fuse after tensile strength；In addition, second ultrasonication is also used to
The oxidation film of first welding surface and the second welding surface surface is removed, and is excluded in first solder layer and the second solder layer
Air defect；So as to improve the solder bond rate of the target blankss and backboard, weld first welding surface and second
The associativity in face is stronger, is not susceptible to fall off.
Detailed description of the invention
Fig. 1 is the flow diagram of one embodiment of manufacturing method of target material assembly of the present invention；
Fig. 2 to Fig. 9 is each step structural schematic diagram in embodiment illustrated in fig. 1.
Specific embodiment
It usually combines, have by the target blankss that meet sputtering performance and with the target blankss it can be seen from background technology that, target material assembly
There is the backboard of some strength to constitute.
For the target material assembly being made of ultra-pure titanium target base and copper backboard, at present mainly using soldering processes come real
The welding of existing target blankss and backboard.The soldering processes are a kind of using fusing point solder more low-melting than target blankss and backboard, are being lower than
Target blankss and backboard fusing point, higher than heating target blankss and backboard simultaneously at a temperature of solder melt point, after solder fusing, make target blankss to
The surface to be welded of welding surface and backboard is oppositely arranged and is bonded, and solder mutually diffuses to form the weldering securely connecting with target blankss, backboard
Connect mode, it is contemplated that the fusing point and solder bond ability of solder, the solder mainly used at present is indium containing solder.
But the solder bond rate of prior art target material assembly is to be improved, analysis the reason for this is that: the material of backboard is usual
For copper, it is easier to use wetting, and the effect of impregnation of ultra-pure titanium target base and indium is poor；So as to cause the solder and institute
The Percentage bound for stating target blankss surface to be welded is lower, and after forming target material assembly, the target blankss and backboard are difficult to sufficiently combine.In sputtering work
Under the high temperature of skill, condition of high voltage, target blankss and backboard engaging portion are easy cracking and then influence the performance of target material assembly, so that sputtering
It is unable to reach the uniform effect of sputtering；Even in severe cases, target blankss are easy to appear to fall off in the backboard the problem of, it may
Sputtering base is caused to damage.
To solve the above-mentioned problems, the present invention provides a kind of manufacturing method of target material assembly, comprising: provides titanium target base and back
Plate, the surface to be welded of the titanium target base are the first welding surface, and the surface to be welded of the backboard is the second welding surface；Described first
The first solder layer is coated on welding surface, the material of first solder layer is the salvage material through using；In first solder
The second solder layer is coated on layer, and the material of second solder layer is the material without using, and second solder layer and the
The material of one solder layer is identical；The first welding surface and described second for being coated with first solder layer and the second solder layer weld
Junction is oppositely arranged and is bonded, and the target blankss is soldered on the backboard by welding procedure, to form target material assembly.
Before the present invention makes first welding surface and the second welding surface be oppositely arranged and be bonded, applied on the first welding surface
The first solder layer is covered, coats the second solder layer on first solder layer, wherein the material of first solder layer is through making
Salvage material, activity is slightly worse, therefore oxidation rate is slower, furthermore in first solder layer doped with back veneer material at
Point, there is preferable effect of impregnation；In addition, metal failure is generally caused by crackle diffusion, and the material of second solder layer
For without the material used, clean metal impurity content is less, and internal flaw is less, to be unfavorable for the extension of crackle, therefore
Tensile strength is higher；Compared to a kind of single scheme using solder layer, first solder layer is coated on first welding surface
With the second solder layer, on the one hand can improve and the effect of impregnation of the first welding surface；On the other hand, the solder layer can also be avoided
The problem of welding effect caused by excessive oxidation declines, can further improve tensile strength, so as to improve the target
The solder bond rate of base and backboard.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Referring to FIG. 1, showing the flow diagram of one embodiment of manufacturing method of target material assembly of the present invention, institute of the present invention
The manufacturing method of the target material assembly of offer includes following basic step:
Step S1: providing titanium target base and backboard, and the surface to be welded of the titanium target base is the first welding surface, the backboard to
Welding surface is the second welding surface；
Step S2: coating the first solder layer on first welding surface, and the material of first solder layer is through using
Salvage material；
Step S3: coating the second solder layer on first solder layer, and the material of second solder layer is without making
Material, and the material of second solder layer and the first solder layer is identical；
Step S4: the first welding surface and second welding surface of first solder layer and the second solder layer are coated with
It is oppositely arranged and is bonded, the target blankss are soldered on the backboard by welding procedure, form target material assembly.
The manufacturing method of the target material assembly of embodiment in order to better illustrate the present invention, below in conjunction with referring to figs. 2 to figure
9, specific embodiments of the present invention are further described.
In conjunction with referring to figs. 2 and 3, execute step S1, titanium target base 100 and backboard 200 be provided, the titanium target base 100 to
Welding surface is the first welding surface 110, and the surface to be welded of the backboard 200 is the second welding surface 210.
Specifically, the size of the backboard 200 is greater than the size of the target blankss 100, and the surface of the backboard 200 includes the
Two region II back plate surfaces, and I back plate surface of first area around II back plate surface of second area.Secondth area
II back plate surface of domain is used to weld with 100 phase of target blankss, shape, size and the target of II back plate surface of second area
Shape, the size of first welding surface 110 of base 100 are identical, and II back plate surface of second area is second welding surface
210, I back plate surface of first area is the fringe region of the backboard 200.
The shape of the target blankss 100 can according to application environment and sputtering require rounded, rectangle, annular, cone or
Any other regular shape or irregular shape.In the present embodiment, the shape of the target blankss 100 is circle；Correspondingly, described
The shape of backboard 200 is circle.
The sputtering technology environment temperature as locating for the target material assembly being made of the target blankss 100 and backboard 200 is higher, is
The stability for guaranteeing target material assembly sputtering performance need to select the material of fusing point is high, electrical and thermal conductivity is strong material as target blankss.
In the present embodiment, the material of the target blankss 100 is high purity titanium.Specifically, the material of the target blankss 100 is ultra-pure titanium, superelevation
The mass percentage content of titanium is greater than or equal to 99.999% in pure titanium.
The backboard 200 is played a supporting role in the target material assembly being subsequently formed, have the function of conduct heat, and with
Solder layer has good effect of impregnation.In the present embodiment, the backboard 200 is copper backboard.In other embodiments, the back
The material of plate can also be the mixing material of copper and stainless steel.
With reference to Fig. 4, step S2 is executed, the first solder layer 310, first weldering are coated on first welding surface 110
The material of the bed of material 310 is the salvage material through using.
The material of first solder layer 310 is the salvage material through using, and activity is slightly worse, therefore oxidation rate is slower；
Furthermore there is preferable effect of impregnation doped with the ingredient of backboard 200 (as shown in Figure 3) material in first solder layer 310
Preferably.
In the present embodiment, the material of first solder layer 310 is indium.The fusing point and hardness of indium are all lower, can be to avoid
In subsequent welding process, the target blankss 100 and backboard 200 deform；In addition, the infiltration fusion faculty of indium is stronger, and have
There is preferable conductive capability, so as to improve the yield and performance of the target material assembly being subsequently formed.In other embodiments, institute
The material for stating the first solder layer can be copper, aluminium, nickel, tin or lead.
In conjunction with reference Fig. 5, it should be noted that when coating the first solder layer 310 on first welding surface 110, institute
State manufacturing method further include: first solder layer 310 is coated on second welding surface 210.
It is subsequent when being welded to the target blankss 100 and backboard 200, first welding surface 110 and the second welding surface 210
On solder layer mutually fuse, so as to further increase the solder bond rate of the target blankss 100 and backboard 200.
Specifically, the step of first solder layer 310 is coated on first welding surface 110 and the second welding surface 210
It suddenly include: that the target blankss 100 and backboard 200 are placed in heating plate, wherein first welding surface 110 and the second welding surface
210 backwards to the heater plate surface；The first solder is placed on first welding surface 110 and the second welding surface 210 respectively；Add
The heat target blankss 100 and backboard 200 are until the target blankss 100 and the temperature of backboard 200 reach preset temperature, in the default temperature
Under degree, fusing is located at the first solder on first welding surface 110 and the second welding surface 210, in first welding surface 110
It is in the first solder layer 310 of melt flow stream shape with formation on the second welding surface 210.
It should be noted that in atmospheric conditions, the fusing point of indium is 156.1 DEG C, the fusing point of ultra-pure titanium is 1650 DEG C, copper
Fusing point be 1083.4 DEG C.Therefore, in the present embodiment, the preset temperature is 170 DEG C to 200 DEG C, in the preset temperature item
Under part, it is sufficient to make first solder fusing and guarantee that the target blankss 100 and backboard 200 are unaffected.
It should be noted that coating first solder layer on first welding surface 110 and the second welding surface 210
After 310, the manufacturing method further include: with target blankss 100 described in the preset temperature continuous heating and backboard 200, to the target
Base 100 and backboard 200 carry out the first ultrasonication.
First ultrasonication is for improving first solder layer 310 and first welding surface 110 and second
The effect of impregnation of welding surface 210 keeps first solder layer 310 and first welding surface 110, the second welding surface 210 more preferable
Ground infiltration；After forming target material assembly, the associativity of first welding surface 110 and the second welding surface 210 is stronger, is not susceptible to take off
It falls.
In the present embodiment, first ultrasonication is carried out using ultrasonic brazing unit.Specifically, described the first to surpass
The step of sonicated includes: to carry out first ultrasonication using ultrasonic oscillator, the ultrasonic oscillator
Power is 250W to 350W, and output frequency is 19KHz to 20KHz, and the processing time is 30 minutes to 35 minutes.
It should also be noted that, coating first solder layer 310 on first welding surface 110 in the present embodiment
Before, the manufacturing method further include: Nickel Plating Treatment is carried out to first welding surface 110.
By the Nickel Plating Treatment, one layer of nickel is plated on first welding surface 110.Due to nickel and the target blankss 100
It can preferably infiltrate, combine with the first solder layer 310, therefore first solder layer 310 and first weldering can be improved
The combination effect of junction 110.
In the present embodiment, the Nickel Plating Treatment is chemical nickel plating.Specifically, the parameter of the Nickel Plating Treatment includes: use
Nickel plating solution be nickel sulfate, sodium citrate and sodium hypophosphite mixed solution, the pH value of the nickel plating solution is 4.6 to 4.8,
Treatment temperature is 86 DEG C to 90 DEG C.
It should be noted that in order to improve the combination effect of first solder layer 310 and second welding surface 210,
Nickel Plating Treatment can also be carried out to second welding surface 210.
With reference to Fig. 6, step S3 is executed, the second solder layer 320, second weldering are coated on first solder layer 310
The material of the bed of material 320 is the material without using, and second solder layer 320 is identical with the material of the first solder layer 310.
Metal failure is generally caused by crackle diffusion, and the material of second solder layer 320 is the material without using,
Clean metal impurity content is less, and internal flaw is less, to be unfavorable for the extension of crackle, therefore second solder layer 320
Tensile strength it is higher, be conducive to the solder bond rate for improving the target blankss 100 and backboard 200 (as shown in Figure 5).
In conjunction with reference Fig. 7, it should be noted that coat second on the first solder layer 310 of first welding surface 110
When solder layer 320, the manufacturing method further include: described is coated on the first solder layer 310 of second welding surface 210
Two solder layers 320.
It specifically, include: by the target blankss 100 the step of coating the second solder layer 320 on first solder layer 310
It is placed in heating plate with backboard 200, wherein first welding surface 110 and the second welding surface 210 are backwards to the heating plate table
Face；The second solder is placed on the first solder layer 310 of first welding surface 110 and the second welding surface 210；Heat the target
Base 100 and backboard 200 under the preset temperature, make until the target blankss 100 and the temperature of backboard 200 reach preset temperature
The second solder on first solder layer 310 sufficiently melts, and forms the second solder layer 320 in melt flow stream shape.
It should be noted that under the preset temperature, second solder layer 320 and 310 phase of the first solder layer
Mutually fusion forms mixed solder layer.
In the present embodiment, the preset temperature is 170 DEG C to 200 DEG C, under the conditions of the preset temperature, it is sufficient to be made described
Second solder fusing and guarantee that the target blankss 100 and backboard 200 are unaffected.
In the present embodiment, the oxidation rate of first solder layer 310 is compared with slow, effect of impregnation is preferable, second solder
The tensile strength of layer 320 is higher.Therefore compared to a kind of single scheme using solder layer, first solder layer 310 and the second weldering
After the mutual fusion of the bed of material 320 forms mixed solder layer, effect of impregnation on the one hand can be improved；On the other hand, solder can also be avoided
Caused by layer excessive oxidation the problem of welding effect decline, tensile strength can be further improved, to be conducive to improve institute
State the solder bond rate of target blankss 100 and backboard 200.
It should be noted that first solder layer 310 is identical with the material of the second solder layer 320 in the present embodiment.One
After aspect, identical first solder layer 310 of material and the mutually fusion of the second solder layer 320, first solder layer 310 and second
Combination effect between solder layer 320 is preferable, after avoiding the subsequent target blankss 100 and backboard 200 from welding, described
Defect is formed between target blankss 100 and backboard 200；On the other hand, first solder layer 310 and the second solder layer 320 are being recycled
During, the rate of recovery can be improved so as to reduce recovery difficult to avoid the introducing of excessive impurity.
It should be noted that second solder layer 320 is identical with the material of the first solder layer 310, refer to: described
Two solder layers 320 are identical with the principal component of the first solder layer 310.The material of second solder layer 320 is the material without using
Material, the material of first solder layer 310 are the salvage material through using, doped with backboard 200 in first solder layer 310
The ingredient of (as shown in Figure 3) material.
In the present embodiment, the material of first solder layer 310 is indium, correspondingly, the material of second solder layer 320
For indium；The principal component of i.e. described first solder layer 310 and the second solder layer 320 is indium.
It should also be noted that, after coating second solder layer 320 on first solder layer 310, the manufacture
Method further include: the second ultrasonication is carried out to the target blankss 100 and backboard 200.
The purposes of second ultrasonication is: improving the effect of impregnation of second solder layer 320, makes described the
Two solder layers 320 are preferably infiltrated with the first welding surface 110, the second welding surface 210；And make second solder layer 320 with
The sufficiently fusion of first solder layer 310 is increased with improving the conjugation of first solder layer 310 and the second solder layer 320
The tensile strength of mixed solder layer mutually after fusion；In addition, second ultrasonication is also used to remove first weldering
The oxidation film on 210 surface of junction 110 and the second welding surface, and exclude in first solder layer 310 and the second solder layer 320
Air defect.Therefore, by second ultrasonication, be conducive to the solder bond for improving the target blankss 100 and backboard 200
Rate keeps the associativity of first welding surface 110 and the second welding surface 210 stronger, is not susceptible to fall off.
In the present embodiment, second ultrasonication is carried out using ultrasonic brazing unit.Specifically, described the second to surpass
The step of sonicated includes: to carry out second ultrasonication using ultrasonic oscillator, the ultrasonic oscillator
Power is 250W to 350W, and output frequency is 19KHz to 20KHz, and the processing time is 30 minutes to 35 minutes.
In conjunction with reference Fig. 8 and Fig. 9, step S4 is executed, first solder layer 310 and the second solder layer 320 are coated with
The first welding surface 110 be oppositely arranged and be bonded with second welding surface 210, the target blankss 100 are welded by welding procedure
It is connected on the backboard 200, to form target material assembly 400 (as shown in Figure 9).
Specifically, as shown in figure 8, the target blankss 100 are overturn, make first welding surface 110 towards described
Then two welding surfaces 210 make first welding surface 110 and the second welding surface 210 be oppositely arranged and be bonded, utilize above-mentioned heating
Plate backboard 200 described in continuous heating under above-mentioned preset temperature, is welded, and target material assembly 400 is formed.
In the present embodiment, adsorbs the target blankss 100 using vaccum-suction attachement pad and lift and be inverted on the backboard 200.
It should be noted that in order to which the gas of 210 faying face of first welding surface 110 and the second welding surface is further discharged
Bubble is affixed the conjunction to the target blankss 100 application pressure, to make institute in first welding surface 110 and the second welding surface 210
It states bubble to be preferably discharged, and then improves the solder bond rate of the target blankss 100 and backboard 200.In the present embodiment, the heating
The predetermined process time of welding is 0.5 hour to 1 hour.
It should also be noted that, after completing the welding using heating plate, first welding surface 110 and the second welding surface
The first solder layer 310 and the second mutually fusion of solder layer 320 between 210, form the mixed solder layer 300 in melt flow stream shape
(as shown in Figure 9).
With continued reference to Fig. 9, it should be noted that after completing the welding procedure, the manufacturing method further include: to welding
Target blankss 100 and backboard 200 afterwards are cooled down.
Specifically, after the target blankss 100 and backboard 200 are heat welded to preset time, stop heating, after welding
Target blankss 100 and backboard 200 carry out cooling treatment.
It should be noted that in 200 cooling procedure of the target blankss 100 and backboard, due to thermal expansion and cold contraction effect, the target
Base 100 and backboard 200 are easy to happen deformation, for this purpose, in the present embodiment, in the cooling procedure of the target blankss 100 and backboard 200
In, pressure is applied to the target blankss 100 using briquetting, while reinforcing the bond strength of the target blankss 100 and backboard 200,
Preventing the target blankss 100 and backboard 200, deformation occurs in cooling procedure.
It should be noted that the pressure applied to the target blankss 100 should not be too large, it is also unsuitable too small.If applying pressure
It is too small, it is difficult to which that preventing the target blankss 100 and backboard 200, deformation occurs in cooling procedure, and reinforces the target blankss 100 and backboard
The effect of 200 bond strength is unobvious；If it is excessive to apply pressure, easily cause between the target blankss 100 and backboard 200
Mixed solder layer 300 overflows, to cause adverse effect to the bond strength of the target blankss 100 and backboard 200.For this purpose, this reality
It applies in example, the quality for the target blankss 100 to be applied with stressed briquetting is 22Kg to 25Kg.
In the present embodiment, the cooling target blankss 100 and backboard 200 by the way of furnace cooling, cooling time are 2.5 small
Up to 3.5 hours.
It should also be noted that, after the cooling step, the manufacturing method further include: to the target blankss 100 and backboard
200 carry out roughing and finishing, form the target material assembly 400 that size meets process requirements.
The present invention sets first welding surface 110 (as shown in Figure 8) and the second welding surface 210 (as shown in Figure 8) relatively
Before setting and being bonded, the first solder layer 310 (as shown in Figure 8) is coated on the first welding surface 110, in first solder layer
The second solder layer 320 (as shown in Figure 8) is coated on 310, wherein the material of first solder layer 310 is the recycling through using
Material, activity is slightly worse, therefore oxidation rate is slower, furthermore in first solder layer 310 doped with backboard 200 (such as Fig. 8 institute
Show) ingredient of material, there is preferable effect of impregnation；In addition, metal failure is generally caused by crackle diffusion, and second weldering
The material of the bed of material 320 is the material without using, and clean metal impurity content is less, and internal flaw is less, to be unfavorable for splitting
The extension of line, therefore the tensile strength of second solder layer 320 is higher；It is described compared to a kind of single scheme using solder layer
After first solder layer 310 and the mutually fusion of the second solder layer 320, on the one hand it can improve and the infiltration of first welding surface 110
Effect；On the other hand, it can also avoid the problem that welding effect caused by the solder layer excessive oxidation declines, further
Tensile strength can be improved, so as to improve the welding knot of the target blankss 100 (as shown in Figure 8) and backboard 200 (as shown in Figure 8)
Conjunction rate.
Although of the invention, oneself is disclosed as above, and present invention is not limited to this.Anyone skilled in the art are not departing from
It in the spirit and scope of the present invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim
Subject to limited range.
Claims (15)
1. a kind of manufacturing method of target material assembly characterized by comprising
There is provided titanium target base and backboard, the surface to be welded of the titanium target base is the first welding surface, and the surface to be welded of the backboard is the
Two welding surfaces；
The first solder layer is coated on first welding surface, the material of first solder layer is the salvage material through using；
Doped with the ingredient of back veneer material in first solder layer；
The second solder layer is coated on first solder layer, the material of second solder layer is the material without using, and
The principal component of second solder layer and the first solder layer is identical；
First solder layer is coated on second welding surface；Institute is coated on the first solder layer of second welding surface
State the second solder layer；
It is coated with the first welding surface of first solder layer and the second solder layer and is coated with first solder layer and the
Second welding surface of two solder layers is oppositely arranged and is bonded, and the target blankss are soldered on the backboard by welding procedure, with
Form target material assembly.
2. the manufacturing method of target material assembly as described in claim 1, which is characterized in that the material of the target blankss is ultra-pure
Titanium, the mass percentage content of titanium is greater than or equal to 99.999% in ultra-pure titanium.
3. the manufacturing method of target material assembly as described in claim 1, which is characterized in that the material of the backboard is copper；Alternatively,
The material of the backboard is the mixing material of copper and stainless steel.
4. the manufacturing method of target material assembly as described in claim 1, which is characterized in that first solder layer and the second solder
The principal component of layer is indium.
5. the manufacturing method of target material assembly as described in claim 1, which is characterized in that welded in first welding surface and second
The step of the first solder layer is coated in junction includes: that the target blankss and backboard are placed in heating plate；
The first solder is placed on first welding surface and the second welding surface respectively；
The target blankss and backboard are heated, fusing is located at the first solder on first welding surface and the second welding surface, described
The first solder layer in melt flow stream shape is formed on first welding surface and the second welding surface.
6. the manufacturing method of target material assembly as described in claim 1, which is characterized in that coat on first solder layer
The step of two solder layers includes: that the target blankss and backboard are placed in heating plate；
The second solder is placed on the first solder layer of first welding surface and the second welding surface；
The target blankss and backboard are heated, fusing is located at the second solder on first solder layer, is formed in melt flow stream shape
Second solder layer, and second solder layer and first solder layer mutually fuse.
7. the manufacturing method of target material assembly as described in claim 1, which is characterized in that welded in first welding surface and second
After coating the first solder layer in junction, before coating the second solder layer on first solder layer, the manufacturing method is also wrapped
It includes: the first ultrasonication is carried out to the target blankss and backboard.
8. the manufacturing method of target material assembly as claimed in claim 7, which is characterized in that the step of first ultrasonication
Include: that first ultrasonication is carried out using ultrasonic oscillator, the power of the ultrasonic oscillator be 250W extremely
350W, output frequency are 19KHz to 20KHz, and the processing time is 30 minutes to 35 minutes.
9. the manufacturing method of target material assembly as described in claim 1, which is characterized in that coat on first solder layer
After two solder layers, before so that first welding surface and the second welding surface is oppositely arranged and is bonded, the manufacturing method further include:
Second ultrasonication is carried out to the target blankss and backboard.
10. the manufacturing method of target material assembly as claimed in claim 9, which is characterized in that the step of second ultrasonication
Suddenly include: that second ultrasonication is carried out using ultrasonic oscillator, the power of the ultrasonic oscillator be 250W extremely
350W, output frequency are 19KHz to 20KHz, and the processing time is 30 minutes to 35 minutes.
11. the manufacturing method of target material assembly as described in claim 1, which is characterized in that after providing target blankss and backboard, described
Before coating the first solder layer on first welding surface, the manufacturing method further include: first welding surface is carried out at nickel plating
Reason.
12. the manufacturing method of target material assembly as claimed in claim 11, which is characterized in that the Nickel Plating Treatment is chemical plating
Nickel, the parameter of the Nickel Plating Treatment include: that the nickel plating solution that uses is molten for the mixing of nickel sulfate, sodium citrate and sodium hypophosphite
Liquid, the pH value of the nickel plating solution are 4.6 to 4.8, and treatment temperature is 86 DEG C to 90 DEG C.
13. the manufacturing method of target material assembly as described in claim 1, which is characterized in that after welding procedure, the manufacturing method
Further include: to after welding target blankss and backboard cool down；In the cooling procedure, the target blankss are applied using briquetting and are pressed
Power.
14. the manufacturing method of target material assembly as claimed in claim 13, which is characterized in that the quality of the briquetting be 22Kg extremely
25Kg, cooling time are 2.5 hours to 3.5 hours.
15. the manufacturing method of target material assembly as claimed in claim 13, which is characterized in that after cooling step, the manufacturer
Method further include: roughing and finishing are carried out to the target blankss and backboard, form target material assembly.
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108655525A (en) * | 2018-05-17 | 2018-10-16 | 洛阳丰联科绑定技术有限公司 | A kind of binding method of target |
| CN109023269B (en) * | 2018-09-29 | 2021-01-05 | 福建阿石创新材料股份有限公司 | Method for manufacturing target material |
| CN111168179A (en) * | 2020-02-11 | 2020-05-19 | 宁波江丰电子材料股份有限公司 | Brazing method for tungsten titanium target and copper back plate |
| CN111136360A (en) * | 2020-02-25 | 2020-05-12 | 宁波江丰电子材料股份有限公司 | Brazing method for cobalt target and copper back plate |
| CN111195757A (en) * | 2020-02-25 | 2020-05-26 | 宁波江丰电子材料股份有限公司 | Brazing method for tantalum target and copper back plate |
| CN112453623A (en) * | 2020-11-04 | 2021-03-09 | 宁波江丰电子材料股份有限公司 | Welding and shaping integrated method for circular titanium target and back plate |
| CN112846560B (en) * | 2021-01-04 | 2022-12-02 | 宁波江丰电子材料股份有限公司 | Processing method for target material assembly before welding |
| CN116174832A (en) * | 2023-04-21 | 2023-05-30 | 中国科学院合肥物质科学研究院 | Piezoelectric sensor probe design method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101811209A (en) * | 2010-04-14 | 2010-08-25 | 宁波江丰电子材料有限公司 | Manufacture method of target assembly |
| CN101879640A (en) * | 2009-05-06 | 2010-11-10 | 光洋应用材料科技股份有限公司 | Ceramic sputtering target assembly and seaming method thereof |
| CN103726025A (en) * | 2014-01-02 | 2014-04-16 | 昆山全亚冠环保科技有限公司 | Target assembly and preparation method thereof |
| CN104419907A (en) * | 2013-09-11 | 2015-03-18 | 宁波江丰电子材料股份有限公司 | Target material component and formation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI223673B (en) * | 2002-07-25 | 2004-11-11 | Hitachi Metals Ltd | Target and manufacturing method thereof |
-
2016
- 2016-07-05 CN CN201610538202.0A patent/CN107570826B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101879640A (en) * | 2009-05-06 | 2010-11-10 | 光洋应用材料科技股份有限公司 | Ceramic sputtering target assembly and seaming method thereof |
| CN101811209A (en) * | 2010-04-14 | 2010-08-25 | 宁波江丰电子材料有限公司 | Manufacture method of target assembly |
| CN104419907A (en) * | 2013-09-11 | 2015-03-18 | 宁波江丰电子材料股份有限公司 | Target material component and formation method thereof |
| CN103726025A (en) * | 2014-01-02 | 2014-04-16 | 昆山全亚冠环保科技有限公司 | Target assembly and preparation method thereof |
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