CN105798409B - The welding method of target material assembly - Google Patents
The welding method of target material assembly Download PDFInfo
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- CN105798409B CN105798409B CN201410854699.8A CN201410854699A CN105798409B CN 105798409 B CN105798409 B CN 105798409B CN 201410854699 A CN201410854699 A CN 201410854699A CN 105798409 B CN105798409 B CN 105798409B
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Abstract
The present invention provides a kind of welding method of tungsten titanium target material component, including：Tungsten titanium target material, copper backboard and intermediate layer are provided；The tungsten titanium target material, intermediate layer and copper backboard are placed in vacuum canning and make the surface to be welded in the intermediate layer and the tungsten titanium target material and the surface to be welded of copper backboard is bonded；The tungsten titanium target material, intermediate layer and copper backboard are welded together to form tungsten titanium target material component using heat and other static pressuring processes；After the completion of welding, the vacuum canning is cooled down, removes the vacuum canning to obtain the tungsten titanium target material component.Pass through the welding method of the present invention, it is possible to achieve the welding between tungsten titanium target material and copper backboard, and welding efficiency is higher, the weld strength of the tungsten titanium target material component of formation compared with it is high, deflection is small, disclosure satisfy that production steady in a long-term and the needs using target.
Description
Technical field
The present invention relates to semiconductor sputtering target manufacturing field, more particularly to a kind of welding method of target material assembly.
Background technology
In the semiconductor industry, target material assembly is made of the backboard for meeting the target of sputtering performance, being combined with target.The back of the body
Plate plays a supportive role in target material assembly, and has effects that to conduct heat.
In sputter procedure, the working environment residing for target material assembly is more severe.Specially：Environment residing for target material assembly
Temperature is higher, such as 300 DEG C to 600 DEG C；In addition, a side blow of target material assembly is cold by force with cooling water, and opposite side is then in 10- 9Under the high vacuum environment of Pa, therefore huge pressure differential is formed in opposite two sides of target material assembly；Furthermore target material assembly is in
In high voltage electric field, magnetic field, it can be bombarded be subject to various particles.Under such rugged environment, if in target material assembly target with
Weld strength between backboard is poor, target will be caused to deform, crack under heating condition, so that sputtering is unable to reach sputtering
Even effect, when serious, target can come off to be caused to damage in backboard to sputtering base.
However, in the prior art, tungsten titanium target material is low with the target material assembly weld strength that copper backboard is formed, deflection is big, sternly
During weight, tungsten titanium target material is in welding process, easy fragmentation.It cannot meet production steadily in the long term and the need using tungsten titanium target material component
Will.
The content of the invention
The technical problem to be solved in the present invention is in the prior art, tungsten titanium target material is welded with the target material assembly that copper backboard is formed
Intensity is low, deflection is big, and when serious, in welding process, easy fragmentation cannot meet to produce and make steadily in the long term tungsten titanium target material
With the needs of tungsten titanium target material component.
In order to solve the above technical problems, the present invention provides a kind of welding method of target material assembly, including：
Tungsten titanium target material, copper backboard and intermediate layer are provided；
The tungsten titanium target material, intermediate layer and copper backboard are placed in vacuum canning, and make the intermediate layer respectively with it is described
The surface to be welded fitting of the surface to be welded and copper backboard of tungsten titanium target material；
The tungsten titanium target material, intermediate layer and copper backboard are welded together to form target group using heat and other static pressuring processes
Part；
After the completion of welding, the vacuum canning is cooled down, removes the vacuum canning to obtain the target material assembly.
Optionally, the material in the intermediate layer is aluminium.
Optionally, the intermediate layer is laminated structure.
Optionally, the thickness in the intermediate layer is more than or equal to 2mm and is less than or equal to 3mm.
Optionally, it is further comprising the steps of before the tungsten titanium target material, intermediate layer and copper backboard being placed in vacuum canning：
First patterned process is carried out to the surface to be welded of the tungsten titanium target material using the method for mechanical processing and forms first
Bulge-structure.
Optionally, it is further comprising the steps of before the tungsten titanium target material, intermediate layer and copper backboard being placed in vacuum canning：
It is convex that the formation second of second patterned process is carried out to the surface to be welded of the copper backboard using the method for mechanical processing
Play structure.
Optionally, the section of first bulge-structure and the second bulge-structure is triangular form.
Optionally, described the step of being welded together tungsten titanium target material, intermediate layer and copper backboard using heat and other static pressuring processes
Including：
The ambient temperature for making to be internally provided with the vacuum canning of the tungsten titanium target material, intermediate layer and copper backboard be more than
Equal to 400 DEG C and less than or equal to 600 DEG C, external environment condition pressure is more than or equal to 100Mpa and is less than or equal to 150Mpa；
When the vacuum canning being pointed under the environment temperature, environmental stress is kept the temperature, pressurize is small more than or equal to 3
And less than or equal to 5 it is small when, the tungsten titanium target material, intermediate layer and copper backboard are welded together.
Optionally, the vacuum canning is to be welded to be formed by the aluminum that thickness is 1.0mm~3.0mm；
After the tungsten titanium target material, intermediate layer and copper backboard are placed in vacuum canning, the vacuum canning is evacuated to very
Reciprocal of duty cycle is at least 10-3Pa, then the vacuum canning is sealed.
Optionally, after forming first bulge-structure and the second bulge-structure, the tungsten titanium target material, intermediate layer and the copper back of the body
Before plate is placed in the vacuum canning, surface to be welded, the interlayer surfaces of surface to be welded, the tungsten titanium target material to the copper backboard
Carry out cleaning treatment.
Compared with prior art, it is the advantages of technical scheme：
By the setting of vacuum canning can whole welding process be to carry out under vacuum conditions, so as to prevent copper from carrying on the back
The surface of plate is aoxidized, moreover, in the welding process of high temperature insostatic pressing (HIP), the atom in intermediate layer easily diffuses to tungsten titanium target material
With in copper backboard, therefore, technical scheme can realize the welding of tungsten titanium target material and copper backboard, and welding efficiency compared with
Height, the target material assembly for welding formation have higher weld strength；In addition, intermediate layer can also avoid or reduce welding stress,
It is unlikely to deform the tungsten titanium target material component to be formed and disclosure satisfy that production steady in a long-term and the needs using target material assembly.
Brief description of the drawings
Fig. 1 is the flow diagram of the welding method of the tungsten titanium target material component of the specific embodiment of the invention；
Fig. 2 is the structure diagram of the tungsten titanium target material component part of the specific embodiment of the invention；
Fig. 3 is the plane amplification signal for the first pattern that the surface to be welded of the tungsten titanium target material of the specific embodiment of the invention is formed
Figure；
Fig. 4 is section enlarged diagrams of the Fig. 3 along AA directions；
Fig. 5 is the plane amplification signal for the second pattern that the surface to be welded of the copper backboard of the specific embodiment of the invention is formed
Figure；
Fig. 6 is section enlarged diagrams of the Fig. 3 along BB directions；
Fig. 7 is that the tungsten titanium target material of the specific embodiment of the invention, copper backboard, intermediate layer are placed in vacuum canning and carry out heat together
The schematic diagram of isostatic pressing process.
Embodiment
The technical problem to be solved in the present invention is in the prior art, tungsten titanium target material is welded with the target material assembly that copper backboard is formed
Intensity is low, deflection is big.When serious, tungsten titanium target material is in welding process, easy fragmentation, it is impossible to which satisfaction is produced and made steadily in the long term
With the needs of tungsten titanium target material component.Reason is as follows：
The hardness of high-purity tungsten titanium target material is big and poor toughness, frangible under high pressure.The prior art, using the method for soldering
To realize the welding of tungsten titanium target material and copper backboard.During above-mentioned tungsten titanium target material and copper backboard are welded, copper backboard
The coefficient of expansion is high, and the coefficient of expansion of tungsten titanium target material is low, therefore, carries out cooling procedure again after welding is heated, can make copper backboard pair
Tungsten titanium target material can apply very big stress, tungsten titanium target material is deformed during welding, and when serious, tungsten titanium target material holds
Easy fragmentation.In addition, copper backboard all easily aoxidizes at ambient and elevated temperatures, therefore, the surface of copper backboard can generate densification
Oxide-film, the oxide-film can largely effect on copper backboard and tungsten titanium target material welding efficiency, and the weld strength of the target material assembly of formation is low
Under, welding can not be also realized when serious.
, can be to avoid above-mentioned technical problem present invention obtains a kind of welding method of target material assembly.
The embodiment of the present invention is described in detail below in conjunction with the accompanying drawings.Elaborate in the following description very
More details are to facilitate a thorough understanding of the present invention, still the present invention can also be different from other sides described here using other
Formula is implemented, therefore the present invention is from the limitation of following public specific embodiment.
Fig. 1 is the flow diagram of the welding method of the tungsten titanium target material component of the specific embodiment of the invention.Including following step
Suddenly：
Perform step S11, there is provided tungsten titanium target material, copper backboard and intermediate layer；
Step S12 is performed, the tungsten titanium target material, intermediate layer, copper backboard are placed in vacuum canning and make the intermediate layer
The surface to be welded of surface to be welded, copper backboard with the tungsten titanium target material is bonded；
Step S13 is performed, is welded together tungsten titanium target material, intermediate layer, copper backboard to be formed using heat and other static pressuring processes
Target material assembly；
Step S14 is performed, after the completion of welding, the vacuum canning is cooled down, removes the vacuum canning to obtain
The target material assembly.
With reference to figure 2, first, step S11 is performed, there is provided tungsten titanium target material 11, copper backboard 12 and intermediate layer 13.
The purity of tungsten titanium target material 11 is at least 99.999% in the present embodiment.Wherein the mass percentage of tungsten is 90%,
The mass percentage of titanium is 10%.According to application environment, the actual requirement of sputtering equipment, the shape of tungsten titanium target material 11 can be
Cylinder, cuboid, square, cone, section is annular, triangle or other analogous shapes (including regular shape and are not advised
Then shape) any of cylinder.Tungsten titanium target material 11 in the present embodiment is cylinder.The diameter dimension of tungsten titanium target material be
Add the allowance of 2mm~5mm in design size, thickness is in design size plus the allowance of 1mm~3mm.If
The purpose for putting allowance is to provide well-to-do processing space in follow-up mechanical processing for tungsten titanium target material 11 to obtain
Satisfactory tungsten titanium target material component.
In the present embodiment, the material of copper backboard 12 is copper alloy.For example, for C18150 copper alloys, C18200 copper alloys or
C46400 copper alloys.Why using above-mentioned copper alloy be used as backboard, be because above-mentioned copper alloy have enough hardness, by force
Degree, and heat conduction, electric conductivity are also higher, the better performances of the tungsten titanium target material component formed with tungsten titanium target material.According to application environment, splash
The actual requirement of jet device, the shape of the copper backboard 12 can be cylinder, cuboid, square, and section is annular, three
The cylinder of any of angular or other analogous shapes (including regular shape and irregular shape).In the present embodiment, the copper back of the body
The shape of plate 12 is cylinder.Copper backboard 12 has the backboard groove 121 for accommodating tungsten titanium target material 11, and the maximum of copper backboard 12 is thick
Spend for 2~4 times of tungsten titanium target material thickness, if copper backboard 12 is too thin, do not reach support strength；If copper backboard 12 is too thick, do not allow
It is easy to install in sputtering base.The footpath of backboard can add the surplus of 2mm~5mm in design size, and thickness is in target size
Upper plus 1mm~3mm surplus.The purpose of increase surplus be to be subsequently formed the procedure of processing after target material assembly provide it is wider
Abundant processing space.
The tungsten titanium target material 11 and the material of copper backboard 12 welded as needed, intermediate layer 13 are to realize tungsten titanium target material 11 and copper
One of necessary condition that backboard 12 welds, moreover, and the solder bond rate between tungsten titanium target material 11 and copper backboard 12 and welding
One of all higher necessary condition of intensity.Wherein, the shape in intermediate layer 13 need to be according to tungsten titanium target material 11 and the shape of copper backboard 12
To set, so that intermediate layer 13 can be bonded with the surface to be welded of the tungsten titanium target material 11, the surface to be welded of copper backboard 12.This reality
Apply in example, the intermediate layer 13 is aluminium flake.Aluminium flake simple shape, it is possible to reduce the difficulty of processing of whole tungsten titanium target material component and add
The work cycle.
With continued reference to Fig. 2, tungsten titanium target material 11 includes surface to be welded I, sputter face III and side IV.The surface to be welded I is
The face that tungsten titanium target material 11 will be welded with intermediate layer 13, sputter face III are the face opposite with surface to be welded I, and side IV is to be welded
Surface between junction I and sputter face III.
The surface to be welded II of copper backboard 12 is the bottom of backboard groove 121, will also be welded with intermediate layer 13
Surface.
Intermediate layer 13 includes the first surface to be welded I ' and the second surface to be welded II ', and the first surface to be welded I ' is will be with tungsten
The face of the surface to be welded I welding of titanium target material 11, the second surface to be welded II ' are that will be welded with the surface to be welded II of copper backboard 12
Face, surfaces of the side IV ' between the first surface to be welded I ' and the second surface to be welded II '.
In the present embodiment, in order to increase tungsten titanium target material 11, copper backboard 12 and the Weldability in intermediate layer 13, machine can be used
The method of tool processing carries out the surface to be welded I of tungsten titanium target material 11 the first patterned process, first patterned process be
The surface to be welded I of tungsten titanium target material 11 forms the first bulge-structure for being inserted into intermediate layer 13, the section of first bulge-structure
Can also be in tip-angled shape, needle-shaped or boss-shaped.First patterned process is carried out to the surface to be welded I of tungsten titanium target material 11, on the one hand
Oxide layer, grease and dust for the surface to be welded I for removing tungsten titanium target material 11.On the other hand, in subsequent technique, intermediate layer
13 is softer than the quality of tungsten titanium target material 11, and above-mentioned first bulge-structure of tungsten titanium target material 11 can also be inserted directly into intermediate layer 13,
And the surface to be welded I of tungsten titanium target material 11 is bonded with the first welding surface II ' in intermediate layer 13.In this way, the first bulge-structure increases
The contact area in tungsten titanium target material 11 and intermediate layer 13 realizes the void-free contact of tungsten titanium target material 11 and intermediate layer 13.This implementation
In example, why need tungsten titanium target material 11 to be contacted with 13 tight formula of intermediate layer, be in order to enable aluminium atom and tungsten titanium atom it
Between can quickly produce gravitational force between atoms so that aluminium atom and tungsten titanium atom can very easily and very quickly into
Row phase counterdiffusion.
In addition, by performing creative labour, find to carry out under mechanical processing formation in the surface to be welded of tungsten titanium target material 11
In this way, tungsten titanium target material 11 can maximumlly be contacted with intermediate layer 13, so as to further increase tungsten when stating the first pattern
Diffusion velocity between titanium and aluminium, further increases the speed of welding of tungsten titanium target material 11 and copper backboard 12, and also improves
Tungsten titanium target material 11 and the weld strength of copper backboard 12.
Fig. 3 is the plane enlarged diagram for the first pattern that the surface to be welded I of tungsten titanium target material 11 is formed.Fig. 4 is Fig. 3 edges
The section enlarged diagram in AA directions.It is multiple base angle phases incorporated by reference to the cross sectional shape with reference to figure 3 and Fig. 4, the first pattern protrusion
Isosceles triangle even, each triangular form are known as tooth form, and the thread height H1 of the first pattern is more than or equal to 0.15mm and is less than
Equal to 0.50mm, the distance W1 on tooth form base is more than or equal to 0.4mm and is less than or equal to 0.6mm.Between adjacent two tooth forms side wall
Angle is that thread form angle α 1 is more than or equal to 60 degree and less than or equal to 105 degree, is the concave part of the first pattern between adjacent two tooth form
Point, and the distance between adjacent two tooth form is that pitch L1 is more than or equal to 0.4mm and is less than or equal to 0.6mm.
In the present embodiment, in order to further increase tungsten titanium target material 11, copper backboard 12 and the welding in intermediate layer 13
Ability, can use the method for mechanical processing to surface to be welded II the second patterned process of progress of copper backboard 12, and described second
Patterned process is inserted into second bulge-structure in intermediate layer 13, protrusion knot to be formed in the surface to be welded II of copper backboard 12
The section of structure can be in tip-angled shape, needle-shaped or boss-shaped.Carry out the second patterned process to the surface to be welded II of copper backboard 12, one
Aspect is used for oxide layer, grease and the dust for removing the surface to be welded II of copper backboard 12, on the other hand, middle in subsequent technique
Layer 13 is softer than the quality of copper backboard 12, and above-mentioned second bulge-structure of copper backboard 12 is directly inserted into intermediate layer 13, and
And the surface to be welded II of copper backboard 12 is bonded with the second surface to be welded II ' in intermediate layer 13.In this way, the second bulge-structure adds
The contact area in copper backboard 12 and intermediate layer 13 realizes the void-free contact of copper backboard 12 and intermediate layer 13.In the present embodiment,
Why need copper backboard 12 to be contacted with 13 tight formulas among tungsten titanium, be in order to enable can between aluminium atom and copper atom
Gravitational force between atoms are quickly produced, so that aluminium atom and copper atom can be rapidly performed by mutually expanding very easily and very much
Dissipate.In this way, above-mentioned first patterned process is carried out on the surface to be welded I of tungsten titanium target material 11, in the surface to be welded of copper backboard 12
Above-mentioned second patterned process is carried out on II.
In this way, tungsten titanium target material 11, copper backboard 12 can be contacted maximumlly with intermediate layer at the same time, so that further
The diffusion velocity improved between tungsten titanium and aluminium, copper and aluminium, it is further to improve tungsten titanium target material 11 and the welding of copper backboard 12
Speed, it is further to improve tungsten titanium target material 11 and the weld strength of copper backboard 12.
By performing creative labour, it is found that mechanical processing is carried out in the surface to be welded of copper backboard 12 forms following second figures
During case, it can maximumlly improve copper backboard 12 and weld the solder bond intensity for the tungsten titanium target material component to be formed with tungsten titanium target material,
And raising welding efficiency can also be maximized.
Fig. 5 is the plane enlarged diagram for the thread pattern that the surface to be welded II of copper backboard 12 is formed.Fig. 6 is Fig. 5 along BB
The section enlarged diagram in direction.Incorporated by reference to reference to figure 5 and Fig. 6, the multiple base angles of cross sectional shape in the second pattern are connected
Isosceles triangle, each triangular form are known as tooth form, and the thread height H2 of thread pattern is more than or equal to 0.4mm and is less than or equal to
0.80mm, the distance W2 on tooth form base are more than or equal to 0.2mm and are less than or equal to 0.4mm.Angle between adjacent two tooth forms side wall
It is more than or equal to 15 degree and less than or equal to 30 degree for thread form angle α 2, is the groove part of the second pattern between adjacent two tooth form, and
The distance between adjacent two tooth form is that pitch L2 is more than or equal to 0.2mm and is less than or equal to 0.4mm.
Then the surface to be welded II of copper backboard 12 is cleaned, copper backboard 12 is cleaned using isopropanol or alcoholic solution.
Scavenging period is 5min~10min, the pollutant formed when being machined for removing, and causes the to be welded of copper backboard 12
Face II is efficiently cleaned, and is prepared for follow-up welding procedure.Dried up after cleaning.
Tungsten titanium target material 11 can also be cleaned using isopropanol or alcoholic solution, scavenging period is 5min~10min so that tungsten
The surface to be welded I of titanium target material 11 is efficiently cleaned, and is prepared for follow-up welding procedure.Dried up after cleaning.
Intermediate layer 13 is cleaned using the sodium hydroxide solution more than or equal to 0.1mol/L and less than or equal to 0.3mol/L, clearly
It is 30min~60min to wash the time, removes the oxide layer on 13 surface of intermediate layer.So that two surfaces to be welded in intermediate layer 13 carry out
Efficient cleaning, prepares for follow-up welding procedure.Dried up after cleaning.
Then combine with reference to figure 7, perform step S12, tungsten titanium target material 11, intermediate layer 13 and copper backboard 12 are placed in vacuum
In jacket 14 and intermediate layer 13 is set to be bonded respectively with the surface to be welded I of the tungsten titanium target material 11 and the surface to be welded of copper backboard.
Specifically, in the present embodiment, during the first bulge-structure on the surface to be welded II of tungsten titanium target material 11 is sequentially inserted into
In interbed 13, the second bulge-structure on the surface to be welded II of copper backboard 12 is sequentially inserted into intermediate layer 13, tungsten titanium target material 11.
And the groove sides of the side IV of the side IV ' in intermediate layer 13 and tungsten titanium target material 11 fitting copper backboards 12, the of intermediate layer 13
One surface to be welded I ' is bonded placement, the second surface to be welded II ' and the copper backboard 12 in intermediate layer 13 with the welding surface I of tungsten titanium target material 11
Welding surface II fitting place, formed target connected components to be welded.First surface to be welded I ' of aluminum middle layer 13 and tungsten titanium target material 11
Welding surface I between, between the welding surface II of the second surface to be welded II ' in intermediate layer 13 and copper backboard 12 form place to be welded.
In this way, gravitational force between atoms can be quickly produced between aluminium atom and tungsten titanium atom, aluminium atom and copper atom, so that
Aluminium atom is set to be rapidly performed by very easily and very phase counterdiffusion with tungsten titanium atom, aluminium atom and copper atom.Therefore,
Such tungsten titanium target material connected components to be welded are welded, can maximumlly improve speed of welding, the tungsten titanium target material group formed
The solder bond intensity of part also highest.
It should be noted that in the present embodiment, the thickness in intermediate layer 13 is more than or equal to 2mm and is less than or equal to 3mm, reason
It is as follows：(1) the raised knot of second in the surface to be welded of the first bulge-structure in 11 surface to be welded of tungsten titanium target material and copper backboard 12
When structure is inserted into intermediate layer 13 at the same time, which is more than the sum of height and the second bulge-structure height of the first bulge-structure, prevents
First bulge-structure is mutually touched with the second bulge-structure and damaged in intermediate layer, strong with the solder bond for influencing follow-up
Degree.(2) intermediate layer of the thickness can play the role of cushion.It is specific as follows：Intermediate layer 13 is clipped in tungsten titanium target material 11 and copper
Between backboard 12, even if the expanded by heating in follow-up welding procedure of copper backboard 12, carries out cooling step, to intermediate layer again afterwards
Stress can be applied, but the material in intermediate layer 13 is aluminium, it is relatively soft, cushioning effect is played to tungsten titanium target material, so that tungsten will not be made
Titanium target material is gone to sticks and staves.And the thickness can play optimal cushioning effect.In addition, it is necessary to explanation, the intermediate layer of the thickness can
To ensure that the first bulge-structure or the second bulge-structure cannot be inserted through, otherwise, the cushioning effect in intermediate layer can disappear.(3)
Aluminum middle layer 13 is one of necessary condition that tungsten titanium target material 11 is welded with copper backboard 12.Because in the condition subsequently welded
Under, it is possible to achieve aluminium atom diffuses in copper backboard 12 and tungsten titanium target material 11 at the same time, to realize tungsten titanium target material 11 and copper backboard 12
Welding.(4) intermediate layer 13 is only sufficiently thin, with copper backboard 12 or also just closer with the surface to be welded of tungsten titanium target material 11, from
And the gravitational force between atoms between tungsten titanium atom, copper atom and aluminium atom can be increased, promote tungsten titanium atom, copper atom respectively with aluminium
Interatomic diffusion, and then improve speed of welding.Certainly, if if intermediate layer 13 is too thick, most of tungsten titanium atom, copper atom
It is distant with the distance between aluminium atom respectively, it is not easy to gravitational force between atoms to be produced, so that aluminium atom is not easy to diffuse to
In copper backboard and tungsten titanium target material.
Certainly, in the present embodiment, the area of the first surface to be welded I ' in intermediate layer 13 is tried one's best to be treated equal to tungsten titanium target material 11
The face that the area of welding surface I, the area of the second surface to be welded II ' in intermediate layer 13 are tried one's best equal to the surface to be welded II of copper backboard 12
Product.In this way, on the premise of sufficiently thin in intermediate layer 13, moreover it is possible to provide enough；Aluminium atom is former to realize tungsten titanium atom and aluminium
Phase counterdiffusion is carried out between son.To ensure the weld strength of tungsten titanium target material 11 and copper backboard 12.
In other embodiment, only the first bulge-structure is formed in the surface to be welded of tungsten titanium target material 11 or only in copper backboard 12
Surface to be welded on form the second bulge-structure and fall within protection scope of the present invention.In other embodiment, in treating for copper backboard
Bulge-structure is formed without patterned process on welding surface, can be directly by the surface to be welded of intermediate layer and tungsten titanium target material, copper
The surface to be welded of backboard carries out fitting and falls within protection scope of the present invention.
After forming tungsten titanium target material connected components to be welded, this connected components to be welded is placed in vacuum canning 14.Vacuum canning 14
It act as preventing connected components to be welded from aoxidizing in case of heating.It should be noted that the material selection of vacuum canning 14
It need to meet two conditions, first condition is：The fusing point of vacuum canning 14 is higher than the temperature during subsequent heat, otherwise vacuum
Jacket 14 can melt during subsequent heat；Second condition be：In the welding process of follow-up tungsten titanium target material and backboard, very
The material of empty jacket can realize preferable pressure conduction, otherwise influence the welding quality of follow-up tungsten titanium target material and backboard, example
As tungsten titanium target material 11 and the solder bond power of copper backboard 12 are not good enough, and weld strength is bad etc..Excellent aluminium bag in the present embodiment
Set.Why aluminium jacket, be because, for tungsten titanium target material and copper backboard, the heat of aluminium jacket and the conduction of pressure
Effect is best.The thickness of vacuum canning 14 is 1.0mm~3.0mm.If vacuum canning 14 is too thin, carried on the back in follow-up tungsten titanium target material and copper
The weld of vacuum canning 14 easily splits in the welding process of plate, causes connected components to be welded to expose the phenomenon with gas leakage；It is if true
Empty jacket 14 is too thick, and vacuum canning 14 is not easily accomplished pressure conduction in the welding process of follow-up tungsten titanium target material and copper backboard.
Vacuum canning 14 can make its shape meet the shape of connected components to be welded, afterwards by Machine Design, such as CAD
Seamless tubular goods or plate are welded together through splicing to be formed, therefore, vacuum canning 14 can fit closely built-in target to be welded
Material component and limited from the size of connected components to be welded, the welding of large-size target can be welded.In addition, vacuum in order to prevent
It is wrapped under the conditions of follow-up high temperature and high pressure and does not deform or rupture, the thermomechanical components to be welded of the target in vacuum canning should belongs to
Regular shape.For needing backboard volume to be more than the target material assembly of target volume, backboard can be equipped with backboard groove, and target is embedding
Enter into the backboard groove, so that tungsten titanium target material side wall is bonded by recess sidewall, in this way, backboard and the target that target is formed are to be welded
Thermomechanical components are exactly a regular shape.
As shown in fig. 7, generally leaving a hole 15 on the vacuum canning 14, can be used for from the vacuum canning 14 drawing
Go out deaeration pipe, which is connected with vaccum-pumping equipment.
Then, seal vacuum canning 14 and stay deaeration pipe.The technique of sealing can be realized by argon arc welding, vacuum step
It is to be completed by deaeration pipe.
Vacuum canning 14 is put into heating furnace and is preheated, temperature is 300 DEG C~400 DEG C (including endpoint), is then opened
Initial line heating side vacuumizes, and then carries out insulation 1h~3h (including endpoint).During the heating and thermal insulation, it is necessary to vacuum
Jacket 14 persistently vacuumizes, and the vacuum in vacuum canning 14 is at least up to 10-3Pa.Inventor has found, to be welded to target
Target material assembly is preheated, and is conducive to preferably carry out vacuumize process so that copper backboard 12 can not be aoxidized, so that after improving
The weld strength of continuous welding procedure.If heating-up temperature is too low, component to be welded, which is heated, insufficient is unfavorable for follow-up welding behaviour
Make nor beneficial to the progress vacuumized；Heating-up temperature is excessive, and the crystal grain of tungsten titanium target material is easily grown up, and crystallite dimension can surpass model
Enclose, so that the tungsten titanium target material component formed does not meet the requirement of sputtering technology.Insulation 1h~3h can realize whole to be welded
The internal temperature for connecing target material assembly uniformly reaches design temperature, if soaking time is too short, temperature inside target material assembly to be welded
Degree is unable to thermally equivalent, and influence is subsequently formed solder bond intensity；If soaking time is long, the crystal grain of tungsten titanium target material is easily grown
Greatly, crystallite dimension meeting over range, the tungsten titanium target material component of formation do not meet the requirement of sputtering technology.Vacuum in vacuum canning 14
Degree is if greater than 10-3Pa, the target material assembly to be welded in vacuum canning are oxidized easily in follow-up welding procedure；Vacuum packet
Vacuum in set is the smaller the better.Vacuum in the present embodiment is the absolute pressure in given space, and is routinely understood true
The concept of reciprocal of duty cycle is different.
Then, continuing to keep to carry out technique of holding one's breath to vacuum canning 14 in the state of 14 inner vacuum of vacuum canning, i.e.,
To be deaerated duct occlusion, vacuum canning is internally formed a closed vacuum environment.The technique of holding one's breath is to pass through mechanical processing
Realized with welding, in the present embodiment, with iron hammer the afterbody of vacuum canning deaeration pipe can be pounded flat and then be sealed with argon arc welding.Close
After gas technique, the vacuum of the vacuum canning is at least 10-3Pa。
The purpose persistently vacuumized in heating is on the one hand can to increase the easness persistently vacuumized, improves and takes out very
Empty efficiency；On the other hand, when hold one's breath technique under conditions of heating and thermal insulation, deaeration pipe can soften, it is easier to will deaerate
The afterbody of pipe is shut.
Then vacuum canning 14 is placed in static pressure stove to carry out welding procedure.
Then, with continued reference to Fig. 1, step S13 is performed, using heat and other static pressuring processes by tungsten titanium target material 11,13 and of intermediate layer
Copper backboard 12 is welded together to form tungsten titanium target material component.So-called high temperature insostatic pressing (HIP) (hot isostatic pressing, HIP)
It is that tungsten titanium target material target material assembly to be welded is placed in vacuum-packed vacuum canning, then utilizes high pressure liquid under the high temperature conditions
Body or gases at high pressure apply vacuum canning each pressure to equalization, vacuum canning is kept one section in this high temperature and high pressure environment
Time is material tight to be welded to be welded together.
At this time, the vacuum canning 14 for being internally provided with tungsten titanium target material 11, intermediate layer 13 and copper backboard 12 is in high temperature and pressure ring
In border.By selecting suitable technological parameter that tungsten titanium target material 11 in the target material assembly in the present embodiment can be made to have with copper backboard 12
Optimal weld strength, specifically, inventor has found to realize using following technological parameter：Ambient temperature is 400 DEG C
~600 DEG C (including endpoints), external environment condition pressure are 100Mpa~150Mpa (including endpoint), (bag when insulation, pressurize 3~5 are small
Include endpoint).That is, the ambient temperature residing for vacuum canning 14 is 400 DEG C~600 DEG C, utilizes highly pressurised liquid or gases at high pressure
It is 100Mpa~150Mpa to make the external environment condition pressure residing for vacuum canning 14, also, vacuum canning 14 is in this high temperature and pressure ring
When holding 3~5 is small in border.
The very thin thickness of vacuum canning 14, under the action of exterior environmental stress, vacuum canning 14 can be realized well
Pressure conduction is so that tungsten titanium target material 11, copper backboard 12 and each surface to be welded in intermediate layer 13 form pressure, simultaneously because vacuum packet
Cover 14 long-times to be located in hot environment, plasticity can occur for tungsten titanium target material 11, copper backboard 12 and each surface to be welded in intermediate layer 13
Deformation and high-temerature creep and realize the crystal grain between the tungsten titanium target material 11 of small area and intermediate layer 13 contact, copper backboard 12 with centre
The lower crystal grain contact area of crystal grain contact, continuous effect between layer 13 gradually expands, and finally reaching place to be welded can be real
Existing crystal grain contact, so that forming gravitational force between atoms between aluminium atom and tungsten titanium atom, between aluminium atom and copper atom.
Then occur at place to be welded between aluminium atom and tungsten titanium atom, the phase counterdiffusion of aluminium atom and copper atom, due to
The aluminium atom at place to be welded, the lasting diffusion of tungsten titanium atom and many gaps at place to be welded is disappeared, meanwhile, place to be welded
Crystal boundary migration have left home position, even if reaching equilibrium state, still has many small gaps to be retained in place to be welded, causes lattice
The various crystal defect bulk depositions such as distortion, dislocation, room, each surface to be welded energy at place to be welded significantly increase, aluminium atom,
Tungsten titanium atom is in high level activation state, and then, aluminium atom and the diffusive migration of tungsten titanium atom, aluminium atom and copper atom are very fast
Speed, the tiny area at place to be welded is formed quickly is connect using tungsten titanium-aluminum metal key and copper-aluminum metal key as main type of attachment
Head, but the metallic bond at place to be welded reaches far away homogenization degree, weld strength is not high.
So it is 400 DEG C~600 DEG C in ambient temperature to need tungsten titanium target material target material assembly to be welded, external environment condition
Pressure is kept the temperature under conditions of being 100Mpa~150Mpa, 3~5 hours of pressurize, so that the left sky of connected components to be welded
Gap is wholly absent, and place to be welded is all formed metallic bond, that is, realizes the homogenization of metallic bond, and the welding for increasing connected components to be welded is strong
Degree.Insulation, the dwell time if less than 3 it is small when, it is impossible to so that the diffusion of the metallic bond of target material assembly to be welded is more uniform,
Soaking time can cause tungsten titanium target material crystal grain to be grown up, can reduce the weld strength of metallic bond on the contrary if greater than 5 hours.
If ambient temperature is less than 400 DEG C, the of the surface to be welded I of tungsten titanium target material 11 and intermediate layer 13 can not be activated
Atoms permeating between the surface to be welded II of one surface to be welded I ', the second surface to be welded II ' in intermediate layer 13 and copper backboard 12；Outside
If portion's environment temperature is higher than 600 DEG C, the waste of cost is caused, in addition, the crystal grain of tungsten titanium target material 11 can be caused to grow up, does not meet and splashes
Penetrate the requirement of technique.If temperature continues to raise, tungsten titanium target material 11 can be made to be melted with copper backboard 12.If external environment condition pressure is less than
100Mpa, cannot equally activate the surface to be welded I of tungsten titanium target material 11 and the first surface to be welded I ' in intermediate layer 13, intermediate layer 13
The second surface to be welded II ' and copper backboard 12 surface to be welded II between atoms permeating；In the scope that welding equipment fortune allows
Interior, pressure is more big more is conducive to phase counterdiffusion between aluminium atom and tungsten titanium atom, aluminium atom and copper atom, and then is more conducive to
The progress of welding procedure.
Had the effect that in the present embodiment by the use of aluminium as intermediate layer：
(1) during the tungsten titanium target material 11 in vacuum canning 14 and copper backboard 12 directly being carried out hot isostatic press welding,
It can not realize the phase counterdiffusion between aluminium atom and aluminium atom.And pass through performing creative labour, it is found that heat in the present embodiment
In isostatic pressing process, aluminium atom can be diffused to easily in tungsten titanium target material 11 and copper backboard 12.And aluminium atom is easier
Diffuse into copper backboard 12, so as to realize aluminium atom and the phase counterdiffusion of copper atom, and then can realize tungsten titanium target material
Welding between 11 surface to be welded I and the surface to be welded II of copper backboard 12.Since tungsten titanium atom is with aluminium atom in this implementation
Also easily spread under conditions of high temperature insostatic pressing (HIP) in example, therefore so that tungsten titanium atom and aluminium atom, copper atom and aluminium atom
Diffusion time it is shorter so that time weld interval is shorter, improve welding efficiency.
(2) intermediate layer is relatively common, and welding cost is relatively low.
Further, since vacuum canning 14 limits from target size and backboard size etc., it is to be welded large scale can will to be housed
The vacuum canning 14 of connected components is put into high temperature insostatic pressing (HIP) stove, using the welding procedure of high temperature insostatic pressing (HIP) i.e. under high temperature, condition of high voltage
Vacuum canning 14 applied it is each realize uniform large-area welding to equalization pressure, form large-sized target material assembly.It is described
The weld welding rate of large-sized target material assembly is high, weld strength is larger and is unlikely to deform.
Then, step S14 is performed, after the completion of welding, vacuum canning is cooled down, removes vacuum canning to obtain tungsten titanium
Target material assembly.After the completion of welding, vacuum canning 14 can be made to cool down in atmosphere, be cooled to less than 200 DEG C, then pass through chemistry
Method or mechanical means remove vacuum canning 14 to obtain target material assembly, for example, turning process can be utilized by vacuum packet
The methods of covering 14 removals, then passing through turning or wire cutting again, so that the target material assembly of final size be made.
Finally, the welding situation to above-mentioned target material assembly is detected：
Solder bond rate is detected using C-SCAN (Water Immersion Ultrasonic C-scan system), should be by tungsten titanium target material and copper backboard institute group
Into tungsten titanium target material component its solder bond rate scope more than 95%.Its tensile strength is tested using tensile testing machine, can reach
The fracture strength (being more than 100MPa) of aluminium, i.e., in tension test, the fracture of only aluminum can just make the weld of target material assembly
Fracture.The result shows that the welding performance of the target material assembly obtained using welding method in the present invention is very reliable.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, may be by the methods and technical content of the disclosure above to this hair
Bright technical solution makes possible variation and modification, therefore, every content without departing from technical solution of the present invention, according to the present invention
Any simple modifications, equivalents, and modifications made to above example of technical spirit, belong to technical solution of the present invention
Protection domain.
Claims (4)
1. a kind of welding method of target material assembly, it is characterised in that comprise the following steps：
Tungsten titanium target material, copper backboard and intermediate layer are provided；
The tungsten titanium target material, intermediate layer and copper backboard are placed in vacuum canning, and make the intermediate layer respectively with the tungsten titanium
The surface to be welded fitting of the surface to be welded and copper backboard of target；
The tungsten titanium target material, intermediate layer and copper backboard are welded together to form target material assembly using heat and other static pressuring processes；
After the completion of welding, the vacuum canning is cooled down, removes the vacuum canning to obtain the target material assembly；
The material in the intermediate layer is aluminium；
The intermediate layer is laminated structure；
The thickness in the intermediate layer is more than or equal to 2mm and is less than or equal to 3mm；
It is further comprising the steps of before the tungsten titanium target material, intermediate layer and copper backboard are placed in vacuum canning：
First patterned process is carried out to the surface to be welded of the tungsten titanium target material using the method for mechanical processing and forms the first protrusion
Structure；
Second patterned process carries out the surface to be welded of the copper backboard using the method for mechanical processing and forms the second raised knot
Structure；
The section of first bulge-structure and the second bulge-structure is triangular form；
First bulge-structure is highly more than or equal to 0.15mm and be less than or equal to 0.50mm, the distance on base for more than or equal to
0.4mm and it is less than or equal to 0.6mm；
Second bulge-structure is highly more than or equal to 0.4mm and be less than or equal to 0.80mm, the distance on base for more than or equal to
0.2mm and it is less than or equal to 0.4mm.
2. according to the method described in claim 1, it is characterized in that, described utilize heat and other static pressuring processes by tungsten titanium target material, centre
The step of layer and copper backboard weld together includes：
The ambient temperature for making to be internally provided with the vacuum canning of the tungsten titanium target material, intermediate layer and copper backboard be more than or equal to
400 DEG C and less than or equal to 600 DEG C, external environment condition pressure is more than or equal to 100Mpa and is less than or equal to 150Mpa；
It is when the vacuum canning being pointed under the environment temperature, environmental stress is kept the temperature, pressurize is small more than or equal to 3 and small
When small equal to 5, the tungsten titanium target material, intermediate layer and copper backboard are welded together.
3. according to the method described in claim 1, it is characterized in that, the vacuum canning is by thickness to be 1.0mm~3.0mm
Aluminum welds to be formed；
After the tungsten titanium target material, intermediate layer and copper backboard are placed in vacuum canning, the vacuum canning is evacuated to vacuum
At least 10-3Pa, then the vacuum canning is sealed.
4. according to the method described in claim 1, it is characterized in that, form first bulge-structure and the second bulge-structure
Afterwards, it is surface to be welded to the copper backboard, described before the tungsten titanium target material, intermediate layer and copper backboard are placed in the vacuum canning
Surface to be welded, the interlayer surfaces of tungsten titanium target material carry out cleaning treatment.
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| CN107971620A (en) * | 2017-11-29 | 2018-05-01 | 宁波江丰电子材料股份有限公司 | A kind of tungsten target material diffusion welding method and target material assembly |
| CN108247190B (en) * | 2018-01-18 | 2019-09-13 | 宁波江丰电子材料股份有限公司 | Tungsten target material diffusion welding structure and tungsten target material diffusion welding method |
| CN111378938A (en) * | 2018-12-29 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
| CN111015111B (en) * | 2019-12-23 | 2021-10-08 | 有研亿金新材料有限公司 | Diffusion welding method for large-size titanium target and copper back plate |
| CN111889869B (en) * | 2020-07-21 | 2022-02-15 | 有研亿金新材料有限公司 | Welding method for high-purity rare earth and alloy target |
| CN112658456A (en) * | 2020-12-14 | 2021-04-16 | 西安嘉业航空科技有限公司 | Hot isostatic pressing integral forming method for target assembly |
| CN112676782B (en) * | 2020-12-25 | 2023-04-07 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and copper back plate |
| CN112935512A (en) * | 2021-03-26 | 2021-06-11 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for cobalt target and copper-chromium alloy back plate |
| CN113458728B (en) * | 2021-07-05 | 2022-11-15 | 宁波江丰电子材料股份有限公司 | Target material assembly and preparation method and application thereof |
| CN115233169B (en) * | 2022-06-22 | 2023-09-05 | 苏州六九新材料科技有限公司 | Aluminum-based tubular target material and preparation method thereof |
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