CN104690417A - Welding method for nickel or nickel alloy target and back panel - Google Patents
Welding method for nickel or nickel alloy target and back panel Download PDFInfo
- Publication number
- CN104690417A CN104690417A CN201310653282.0A CN201310653282A CN104690417A CN 104690417 A CN104690417 A CN 104690417A CN 201310653282 A CN201310653282 A CN 201310653282A CN 104690417 A CN104690417 A CN 104690417A
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- Prior art keywords
- nickel
- target
- welding
- backboard
- alloy target
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
- B23K20/026—Thermo-compression bonding with diffusion of soldering material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
- B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to the technical field of target manufacturing and discloses a method for welding a nickel or nickel alloy target and a back panel. The method comprises the following steps: firstly, surface treatment is performed on welding surfaces of the target and the back panel, after treatment, a sheath is externally added, then a diffusion welding method is used for welding the nickel or nickel alloy target onto the back panel. The diffusion welding method provided by the invention can achieve high-intensity and high welding rate welding to the nickel or nickel alloy target with a large area, ensures favorable heat conduction of the target and the back panel, prevents conditions, such as deformation, warpage, detachment and the like between the target and the back panel, caused by over-high sputtering power of the nickel or nickel alloy target, and ensures the sputtering performance of the nickel or nickel alloy target.
Description
Technical field
The invention belongs to target manufacturing technology field, be specifically related to the welding method of a kind of nickel or nickel alloy target and backboard.
Background technology
Sputter coating is a kind of common technique in semiconductor production, and in sputter coating process, usually use backboard to be fixed for the target sputtered, backboard also has the effect producing heat in conduction sputter procedure simultaneously.
Because the material of target is different with application, the welding procedure used during welding is closely not identical yet.The multiple sputtering target material of commercial Application is by meeting target and aluminium alloy that sputtering requires or the assembly that copper alloy backing plate is formed by connecting, under existing sputtering technology, target material assembly condition of work is severe, under during sputtering, target side is in high temperature, high vacuum, the cooling water that backboard side then passes to certain pressure is cold by force, therefore target material assembly both sides form huge temperature difference and pressure differential, and meanwhile, water-cooled backboard and target sputter face temperature difference and pressure differential cause weld seam to bear huge internal stress.Therefore, in target manufacture, welding quality has strict demand, and welding must have good thermal conductivity, and the heat conduction that sputtering can be produced is to cooling water; Weld seam must have enough intensity, otherwise will cause that target deforms under heating condition, warpage, weld cracking, and target and backboard depart from, and finally affecting quality of forming film even causes heavy damage to sputtering machine table.
Nickel or nickel alloy target have a wide range of applications in field of semiconductor manufacture.Along with the fast development of IT industry, wafer size constantly expands, plated film efficiency improves constantly, the sputtering power of target constantly increases, and requires also more and more higher, therefore to nickel or nickel alloy target weld strength and welded rate, traditional small size nickel or the soldering of nickel alloy target and backboard or technique for sticking, weld strength is all less than 40MPa usually, and welded rate only requires >=95%, the more and more difficult requirement meeting sputtering technology development.
In sum, select one that nickel or nickel alloy and backboard can be made to combine, the method for the weld strength and welded rate that can improve again target and backboard just seems very necessary.
Summary of the invention
The object of this invention is to provide the welding method of a kind of nickel or nickel alloy target and backboard, realize the high strength of target, high welded rate welding, simultaneously ensure nickel or nickel alloy target microstructure unaffected in welding process.
Above-mentioned purpose of the present invention reaches by the following technical programs:
The welding method of a kind of nickel or nickel alloy target and backboard, the solder side of nickel or nickel alloy target is carried out surface treatment, the solder side of backboard is processed into plane, high temperature insostatic pressing (HIP) method is adopted to carry out Diffusion Welding, nickel or nickel alloy target and backboard are welded together, the temperature of Diffusion Welding is 400 DEG C ~ 650 DEG C, and pressure is 50 ~ 150MPa, and be incubated, pressurize 2 ~ 5 hours.
Described surface treatment is frosting treatment, and its mode is machined tooth or sandblasting, and treating depth is 0.01mm ~ 1mm.
Described backboard is aluminum alloy back plate or copper alloy backing plate.
When backboard is aluminum alloy back plate, after nickel or nickel alloy target solder side carry out surface treatment, at the metal film layer of plated surface Ti, V, Ta, Zr or Nb, thickness is 100-3000 nanometer.
Adopt when nickel or nickel alloy target and backboard welding the mode of jacket will solder side space vacuum airtight.
Beneficial effect of the present invention: welding method of the present invention can realize the high strength of large area nickel or nickel alloy target, the welding of high welded rate, ensure the good heat transfer of target and backboard, prevent nickel or nickel alloy target to cause between target and backboard the situations such as distortion, warpage, disengaging to occur because sputtering power is excessive, the sputtering performance of nickel or nickel alloy target is guaranteed, its welded rate reaches more than 98%, be welded into power close to 100%, far above other welding or bonding way.
Accompanying drawing explanation
Fig. 1 is for adopting target of the present invention and backboard welding method gained target material assembly structural representation;
Number in the figure respectively represents: 1 is nickel or nickel alloy target; 2 backboards.
Fig. 2 is the shape of cross section schematic diagram of machined tooth.
Detailed description of the invention
Embodiment 1
High purity nickel welds example with copper zinc backboard.
High purity nickel target and backboard diameter are 350mm, and nickel target thickness is 3mm, and copper zinc back plate thickness is 10mm.First getting on the bus in high purity nickel target welding junction processes uniform, concentric, and cross section is the annular tooth of " fall V " dark 0.2mm, as shown in Figure 2; Adopt high temperature insostatic pressing (HIP) method to carry out Diffusion Welding, temperature 400 DEG C, pressure 145MPa after package cover, with stove cooling after insulation, 3 hours dwell times, obtain target material assembly, as shown in Figure 1.
Welding quality test: postwelding carries out C-Scan detection solder bond rate to nickel target assembly can reach 99.5%; Test target material assembly weld strength, mean value is 78MPa.It is reliable that the above results shows to adopt welding method gained nickel target assembly of the present invention welding, and nickel target magnetic property is uninfluenced, can meet sputtering requirement.
Embodiment 2
High purity nickel target welds example with 6061 aluminium backboards.
Nickel target and backboard diameter are 350mm, nickel target thickness 4mm, 6061 aluminium back plate thickness 10mm: first get on the bus in high purity nickel target welding junction and process uniform, concentric, cross section is the annular tooth of " trapezoidal " dark 0.5mm, at flank of tooth sputtering plating vanadium film after cleaning, thickness is 300-1000 nanometer; Adopt hot-press method to carry out Diffusion Welding, temperature 400 DEG C, pressure 55MPa after package cover, with stove cooling after insulation, 2 hours dwell times, obtain target material assembly.
Welding quality test: postwelding carries out C-Scan detection solder bond rate to nickel target assembly can reach 99.7%; Test target material assembly weld strength, mean value is 94MPa.It is reliable that the above results shows to adopt welding method gained nickel target assembly of the present invention welding, and nickel target magnetic property is uninfluenced, can meet sputtering requirement.
Embodiment 3
Nickel-vanadium alloy welds example with copper zinc backboard.
Nickel-vanadium alloy target and backboard are 400 × 120mm, and nickel target thickness is 11mm, and copper zinc back plate thickness is 15mm.First getting on the bus in nickel-vanadium alloy target welding junction processes uniform, and cross section is the straight line tooth of " fall V " dark 0.2mm; Adopt high temperature insostatic pressing (HIP) method to carry out Diffusion Welding, temperature 645 DEG C, pressure 150MPa after package cover, with stove cooling after insulation, 5 hours dwell times, obtain target material assembly.
Welding quality test: postwelding carries out C-Scan detection solder bond rate to nickel-vanadium alloy target material assembly can reach 98.5%; Test target material assembly weld strength, mean value is 156MPa.It is reliable that the above results shows to adopt welding method gained nickel vanadium target material assembly of the present invention welding, can meet sputtering requirement.
Embodiment 4
Nickel-vanadium alloy target welds example with 6061 aluminium backboards.
Nickel-vanadium alloy target and backboard diameter are 350mm, nickel vanadium target thickness 11mm, 6061 aluminium back plate thickness 15mm: first nickel-vanadium alloy target welding junction get on the bus process uniform, concentric, cross section is the annular tooth of " trapezoidal " dark 0.4mm, at flank of tooth sputtering plating titanium film after cleaning, thickness is 300-1000 nanometer; Adopt high temperature insostatic pressing (HIP) method to carry out Diffusion Welding, temperature 510 DEG C, pressure 120MPa after package cover, with stove cooling after insulation, 5 hours dwell times, obtain target material assembly.
Welding quality test: postwelding carries out C-Scan detection solder bond rate to nickel-vanadium alloy target material assembly can reach 99.3%; Test target material assembly weld strength, mean value is 102MPa.It is reliable that the above results shows to adopt welding method gained nickel vanadium target material assembly of the present invention welding, can meet sputtering requirement.
Comparative example 1
High purity nickel welds example with copper zinc backboard.
High purity nickel target and backboard diameter are 350mm, and nickel target thickness is 3mm, and copper zinc back plate thickness is 10mm.First getting on the bus in high purity nickel target welding junction processes uniform, concentric, and cross section is the annular tooth of " fall V " dark 0.2mm; High temperature insostatic pressing (HIP) method is adopted to carry out Diffusion Welding, temperature 660 DEG C, pressure 145MPa, with stove cooling after insulation, 3 hours dwell times, gained target material assembly structure.
Welding quality test: postwelding carries out C-Scan detection solder bond rate to nickel target assembly can reach 99.4%; Test target material assembly weld strength, mean value is 181MPa, and nickel target average crystal grain is obviously grown up.It is reliable that the above results shows to adopt welding method gained nickel target assembly of the present invention welding, but the too high microstructure that causes of welding temperature changes, and finally affects the sputtering performance of target.
Comparative example 2
Nickel-vanadium alloy target welds example with 6061 aluminium backboards.
Nickel-vanadium alloy target and backboard diameter are 350mm, nickel vanadium target thickness 11mm, 6061 aluminium back plate thickness 15mm: first nickel-vanadium alloy target welding junction get on the bus process uniform, concentric, cross section is the annular tooth of " trapezoidal " dark 0.4mm, in flank of tooth sputtering plating vanadium film thickness 100-150 nanometer after cleaning; Adopt high temperature insostatic pressing (HIP) method to carry out Diffusion Welding, temperature 510 DEG C, pressure 45MPa, cool with stove after insulation, 5 hours dwell times.
Welding quality test: postwelding carries out C-Scan detection solder bond rate to nickel-vanadium alloy target material assembly can reach 98.8%; Test target material assembly weld strength, mean value is 34MPa.The above results shows to adopt too low welding pressure welding target gained nickel vanadium target material assembly welding weldering intensity and welded rate obviously to decline, and can not meet the instructions for use of large-size sputtering target material.
Comparative example 3
Nickel-vanadium alloy target welds example with 6061 aluminium backboards.
Nickel-vanadium alloy target and backboard diameter are 350mm, nickel vanadium target thickness 11mm, 6061 aluminium back plate thickness 15mm: first nickel-vanadium alloy target welding junction get on the bus process uniform, concentric, cross section is the annular tooth of " trapezoidal " dark 0.4mm, high temperature insostatic pressing (HIP) method is directly adopted to carry out Diffusion Welding, temperature 510 DEG C, pressure 120MPa after cleaning, with stove cooling after insulation, 5 hours dwell times, obtain target material assembly.
Welding quality test: postwelding carries out C-Scan detection solder bond rate to nickel-vanadium alloy target material assembly can reach 99.1%; Test target material assembly weld strength, mean value is 18MPa.The above results shows not at toughness refractory metal and alloy firm layers thereof such as skiving plated surface Ti, Ta, Zr, V, Nb, the brittlement phase metallic compound of W metal and Al can be caused, cause gained nickel vanadium target material assembly to weld weldering intensity to decline, the instructions for use of large-size sputtering target material can not be met.
Claims (5)
1. the welding method of a nickel or nickel alloy target and backboard, it is characterized in that: the solder side of nickel or nickel alloy target is carried out surface treatment, the solder side of backboard is processed into plane, high temperature insostatic pressing (HIP) method is adopted to carry out Diffusion Welding, nickel or nickel alloy target and backboard are welded together, the temperature of Diffusion Welding is 400 DEG C ~ 650 DEG C, and pressure is 50 ~ 150MPa, and be incubated, pressurize 2 ~ 5 hours.
2. the welding method of the nickel according to claims 1 or nickel alloy target and backboard, is characterized in that, described surface treatment is frosting treatment, and its mode is machined tooth or sandblasting, and treating depth is 0.01mm ~ 1mm.
3. the welding method of the nickel according to claims 1 or nickel alloy target and backboard, is characterized in that, described backboard is aluminum alloy back plate or copper alloy backing plate.
4. the welding method of the nickel according to claims 3 or nickel alloy target and backboard, it is characterized in that, when backboard is aluminum alloy back plate, after nickel or nickel alloy target solder side carry out surface treatment, at the metal film layer of plated surface Ti, V, Ta, Zr or Nb, thickness is 100-3000 nanometer.
5. the welding method of the nickel according to claims 1 or nickel alloy target and backboard, is characterized in that, adopt when nickel or nickel alloy target and backboard welding the mode of jacket will solder side space vacuum airtight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310653282.0A CN104690417B (en) | 2013-12-05 | 2013-12-05 | A kind of welding method of nickel or nickel alloy target and backboard |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310653282.0A CN104690417B (en) | 2013-12-05 | 2013-12-05 | A kind of welding method of nickel or nickel alloy target and backboard |
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| Publication Number | Publication Date |
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| CN104690417A true CN104690417A (en) | 2015-06-10 |
| CN104690417B CN104690417B (en) | 2017-09-29 |
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| CN201310653282.0A Active CN104690417B (en) | 2013-12-05 | 2013-12-05 | A kind of welding method of nickel or nickel alloy target and backboard |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108149203A (en) * | 2016-12-05 | 2018-06-12 | 宁波江丰电子材料股份有限公司 | The manufacturing method of target material assembly |
| CN108526676A (en) * | 2018-03-28 | 2018-09-14 | 西北工业大学 | Hot isostatic pressing diffusion connection TiAl alloy and Ti2The method of AlNb alloy annular parts |
| CN108544074A (en) * | 2018-04-20 | 2018-09-18 | 北京航空航天大学 | A kind of high temperature alloy and oxygen-free copper annular element diffusion connection method |
| CN108788655A (en) * | 2018-08-21 | 2018-11-13 | 北京航空航天大学 | A kind of method of nickel base superalloy annular element diffusion connection Kufil |
| CN108838505A (en) * | 2018-07-25 | 2018-11-20 | 昆山恩能聚新能源科技有限公司 | A kind of macromolecule aluminum diffusing nickel welding method |
| CN109290580A (en) * | 2018-11-07 | 2019-02-01 | 北京航空航天大学 | A kind of nickel base superalloy annular element method in conjunction with the solid powder of copper zinc-aluminium powder |
| CN111195757A (en) * | 2020-02-25 | 2020-05-26 | 宁波江丰电子材料股份有限公司 | Brazing method for tantalum target and copper back plate |
| CN111889869A (en) * | 2020-07-21 | 2020-11-06 | 有研亿金新材料有限公司 | Welding method for high-purity rare earth and alloy target |
| CN113020826A (en) * | 2021-03-16 | 2021-06-25 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for nickel target and aluminum alloy back plate |
| CN114147243A (en) * | 2021-12-28 | 2022-03-08 | 宁波江丰电子材料股份有限公司 | End face diffusion thread machining method for nickel-vanadium target welding |
| CN115229323A (en) * | 2022-07-11 | 2022-10-25 | 哈尔滨工业大学 | Method for low-temperature diffusion bonding of nickel-based high-temperature alloy by adopting nanocrystalline nickel deposition layer |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108149203A (en) * | 2016-12-05 | 2018-06-12 | 宁波江丰电子材料股份有限公司 | The manufacturing method of target material assembly |
| CN108526676A (en) * | 2018-03-28 | 2018-09-14 | 西北工业大学 | Hot isostatic pressing diffusion connection TiAl alloy and Ti2The method of AlNb alloy annular parts |
| CN108544074A (en) * | 2018-04-20 | 2018-09-18 | 北京航空航天大学 | A kind of high temperature alloy and oxygen-free copper annular element diffusion connection method |
| CN108838505A (en) * | 2018-07-25 | 2018-11-20 | 昆山恩能聚新能源科技有限公司 | A kind of macromolecule aluminum diffusing nickel welding method |
| CN108788655A (en) * | 2018-08-21 | 2018-11-13 | 北京航空航天大学 | A kind of method of nickel base superalloy annular element diffusion connection Kufil |
| CN109290580A (en) * | 2018-11-07 | 2019-02-01 | 北京航空航天大学 | A kind of nickel base superalloy annular element method in conjunction with the solid powder of copper zinc-aluminium powder |
| CN111195757A (en) * | 2020-02-25 | 2020-05-26 | 宁波江丰电子材料股份有限公司 | Brazing method for tantalum target and copper back plate |
| CN111889869A (en) * | 2020-07-21 | 2020-11-06 | 有研亿金新材料有限公司 | Welding method for high-purity rare earth and alloy target |
| CN111889869B (en) * | 2020-07-21 | 2022-02-15 | 有研亿金新材料有限公司 | Welding method for high-purity rare earth and alloy target |
| CN113020826A (en) * | 2021-03-16 | 2021-06-25 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for nickel target and aluminum alloy back plate |
| CN114147243A (en) * | 2021-12-28 | 2022-03-08 | 宁波江丰电子材料股份有限公司 | End face diffusion thread machining method for nickel-vanadium target welding |
| CN115229323A (en) * | 2022-07-11 | 2022-10-25 | 哈尔滨工业大学 | Method for low-temperature diffusion bonding of nickel-based high-temperature alloy by adopting nanocrystalline nickel deposition layer |
| CN115229323B (en) * | 2022-07-11 | 2023-08-11 | 哈尔滨工业大学 | Method for connecting nickel-based superalloy by adopting nanocrystalline nickel deposition layer low-temperature diffusion |
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