CN108000057A - The manufacture method of target material assembly - Google Patents
The manufacture method of target material assembly Download PDFInfo
- Publication number
- CN108000057A CN108000057A CN201711024429.4A CN201711024429A CN108000057A CN 108000057 A CN108000057 A CN 108000057A CN 201711024429 A CN201711024429 A CN 201711024429A CN 108000057 A CN108000057 A CN 108000057A
- Authority
- CN
- China
- Prior art keywords
- target
- backboard
- slab
- material assembly
- target material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of manufacture method of target material assembly, including：Required to prepare corresponding backboard powder raw material according to backboard material；Prepare target slab to be welded, target slab includes sputter face and welding surface；Backboard powder raw material and target slab are sequentially loaded into mould, the welding surface of backboard powder raw material and target slab is in contact；Mould equipped with backboard powder raw material and target slab is put into vacuum sintering funace, it is synchronous to carry out backboard Thermocompressed sintering and forming, and target slab and back veneer material Diffusion Welding, obtain target material assembly base substrate；Shape mechanical process is carried out to obtained target material assembly base substrate and obtains target material assembly.Target material assembly surface smoothness produced by the present invention is high, flexural deformation is small, welded rate is high, and backboard consistency is high, components welding high yield rate.
Description
Technical field
The present invention relates to a kind of materials processing technology, specifically, is related to a kind of manufacture method of target material assembly.
Background technology
In magnetron sputtering technique, target material assembly is generally by meeting the target slab of sputtering requirement and having the back of the body of some strength
Plate forms.Backboard material usually has Al alloys, Cu alloys, Ti alloys, stainless steel and Mo alloys etc..Existing magnetron sputtering technique bar
Under part, by high-energy particle bombardment, temperature is higher, and is in 10 in target as sputter face-5Under ultrahigh vacuum；And backboard side need to be passed through
The cooling water progress of certain pressure is strong cold, and thus in target material assembly both sides, there are huge temperature difference and pressure differential, component work
It is extremely severe to make condition.Therefore, on the one hand requiring target and backboard has higher welding quality, and component has during to sputter
Good heat conduction, electric conductivity；On the other hand require target material assembly that there is certain intensity, avoid target during sputtering from opening
Split, come off, influence quality of forming film.
The production method of target material assembly is at present：Prepare backboard section bar and target material blank body to be welded in advance, by soldering or
Target material blank body is welded on backboard by diffusion welding (DW), and target material assembly is obtained by machining.Brazing mode is limited by the solders such as indium, tin
Fusing point is relatively low, is only applicable to small-power sputtering and requires.Diffusion welding (DW) can ensure the high-intensity welding of target material assembly, suitable for big work(
Rate magnetron sputtering, but since target is different from back veneer material material, thermal expansion coefficient difference, target material assembly is curved after Diffusion Welding
Song deformation is big, and solder yield is low.
The content of the invention
Technical problem solved by the invention is to provide a kind of manufacture method of target material assembly, the target material assembly surface of manufacture
Flatness is high, flexural deformation is small, welded rate is high, and backboard consistency is high, components welding high yield rate.
Technical solution is as follows：
A kind of manufacture method of target material assembly, including：
Required to prepare corresponding backboard powder raw material according to backboard material；
Prepare target slab to be welded, target slab includes sputter face and welding surface；
Backboard powder raw material and target slab are sequentially loaded into mould, the welding surface of backboard powder raw material and target slab
It is in contact；
Mould equipped with backboard powder raw material and target slab is put into vacuum sintering funace, it is synchronous to carry out backboard hot pressing
Sinter molding, and target slab and back veneer material Diffusion Welding, obtain target material assembly base substrate；
Shape mechanical process is carried out to obtained target material assembly base substrate and obtains target material assembly.
Further：Backboard powder raw material is Al powder or Cu powder, and granularity is less than 100 μm.
Further：Before target slab loads mould, the welding surface of target slab is subjected to sandblasting or mechanical process in advance,
Improve the roughness of welding surface.
Further：After mould is put into vacuum sintering funace, pre-pressing, compaction pressure 0.1 are first carried out before sinter molding
~5MPa.
Further：500-800 DEG C of hot pressed sintering temperature, 20~30MPa of pressure, when heat-insulation pressure keeping 2~3 is small.
Compared with prior art, the technology of the present invention effect includes：
(1) technological process simplifies, and producing efficiency is high.
Backboard powder raw material and target slab to be welded are put into vacuum sintering funace by the method for the present invention, in vacuum hotpressing
In sintering process, backboard powder hot-pressing sinter molding, and target slab and back veneer material thermal diffusion welding are synchronously realized
It is synchronous to carry out.Compared with the prior art, target material assembly fabrication processing is simplified, improves establishment of component efficiency.
(2) weld strength is high, welded rate is high.
The method of the present invention makes backboard be contacted in powder form with target slab to be welded, the two contact area is big, Yi Jie
Diffusion layer is formed at face, improves welding quality.At the same time during process implementing, outside applies pressure to be existed all the time, backboard powder
Expect that flow rate is fast, realize high intensity, the Diffusion Welding of high reliability.The backboard consistency of the method for the present invention manufacture is high, component
Solder yield is high.
(3) raw material availability is high, components welding high yield rate.The method of the present invention can realize back veneer material near net-shape into
Type, the follow-up cutting output that machines is few, and raw material availability is high.Assembly surface flatness is high after welding, and flexural deformation is small, welding finished product
Rate is high.
Brief description of the drawings
Fig. 1 is the flow chart of the manufacture method of target material assembly in the present invention.
Embodiment
Elaborate below with reference to example embodiment to technical solution of the present invention.However, example embodiment can
Implement in a variety of forms, and be not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that
The design of example embodiment more comprehensively and completely, and is comprehensively communicated to those skilled in the art by the present invention.
As shown in Figure 1, it is the flow chart of the manufacture method of target material assembly in the present invention.
The manufacture method of target material assembly, comprises the following steps that：
Step 1：Required to prepare corresponding backboard powder raw material according to backboard material；
Backboard powder raw material is Al powder or Cu powder, and granularity is less than 100 μm.
Step 2：Prepare target slab to be welded, target slab includes sputter face and welding surface；
The welding surface of target slab to be welded carries out sandblasting or mechanical process in advance, improves the roughness of welding surface.
Step 3：Backboard powder raw material and target slab are sequentially loaded into mould, backboard powder raw material and target slab
Welding surface is in contact；
Step 4：Mould equipped with backboard powder raw material and target slab is put into vacuum sintering funace, is synchronously carried on the back
Plate Thermocompressed sintering and forming, and target slab and back veneer material Diffusion Welding, obtain target material assembly base substrate；
After mould is put into vacuum sintering funace, pre-pressing is carried out in advance, and compaction pressure is 0.1~5MPa.Hot pressed sintering
500-800 DEG C of temperature, 20~30MPa of pressure, when heat-insulation pressure keeping 2~3 is small.
Step 5：Shape mechanical process is carried out to obtained target material assembly base substrate and obtains target material assembly.
Embodiment 1：
It is Cr to make target material, and backboard material is the target material assembly of Cu, specifically includes following steps：
(1) stock up：Prepare Cr targets slab and Cu powder to be welded, wherein Cu Powder Particle Sizes are 75 μm；
(2) treatment of mat：The welding surface of Cr target slabs is subjected to blasting treatment, improves the roughness of welding surface；
(3) it is die-filling：Cr targets slab and Cu powder are sequentially loaded into mould, make the welding surface phase of Cu powder and Cr target slabs
Contact；
(4) hot pressed sintering, diffusion welding (DW)：Mould equipped with Cr targets slab and Cu powder is put into vacuum sintering funace, and
The upper and lower pressure head of upper and lower pressure head alignment mould of hot pressing furnace is subjected to pre-pressing, compaction pressure 0.5MPa.Fire door is closed to start to take out
Vacuum, when vacuum is higher than 1 × 10 in hot pressing furnace-2During Pa, start to warm up, temperature rises to 800 DEG C, and increase pressure to 25MPa, is protected
When warm pressurize 2 is small, the thermal diffusion of Cr targets slab and Cu back veneer materials is carried out while Cu backboard powder hot-pressing sinter moldings
Welding.It is Cr that furnace cooling, which obtains target material, and backboard material is the target material assembly base substrate of Cu；
(5) machine：It is Cr that target material assembly base substrate, which is carried out shape mechanical process to obtain target material, and backboard material is
The target material assembly of Cu.
Target material assembly surface smoothness through the acquisition of above-mentioned technique is high, flexural deformation is small, and Cu backboard relative densities reach
98.3%.Component tensile strength reaches 55MPa, through C-Scan detection components welded rate up to 99.5%.
Embodiment 2：
It is W-Ti alloys to make target material, and backboard material is the target material assembly of Al, specifically includes following steps：
(1) stock up：Prepare W-Ti alloy target materials slab and Al powder to be welded, wherein W-Ti alloying components are W-10wt.%
Ti, Al Powder Particle Size are 80 μm；
(2) treatment of mat：The welding surface of W-Ti alloy target material slabs is machined out processing, improves the coarse of welding surface
Degree；
(3) it is die-filling：W-Ti alloy target materials slab and Al powder are sequentially loaded into mould, make Al powder and W-Ti alloy target material plates
The welding surface of base is in contact；
(4) hot pressed sintering, diffusion welding (DW)：Mould equipped with W-Ti alloy target materials slab and Al powder is put into vacuum heating-press sintering
Stove, and the upper and lower pressure head of upper and lower pressure head alignment mould of hot pressing furnace is subjected to pre-pressing, compaction pressure 0.1MPa.Fire door is closed to open
Beginning vacuumizes, when vacuum is higher than 1 × 10 in hot pressing furnace-2During Pa, start to warm up, temperature rises to 500 DEG C, and increase pressure is extremely
30MPa, when heat-insulation pressure keeping 2.5 is small, carries out W-Ti alloy target materials slab and Al while Al backboard powder hot-pressing sinter moldings
The thermal diffusion welding of back veneer material.It is W-Ti alloys that furnace cooling, which obtains target material, and backboard material is the target material assembly base of Al
Body；
(5) machine：It is W-Ti alloys that target material assembly base substrate, which is carried out shape mechanical process to obtain target material, backboard
Material is the target material assembly of Al.
Target material assembly surface smoothness through the acquisition of above-mentioned technique is high, flexural deformation is small, and Al backboard relative densities reach
99.1%.Component tensile strength reaches 58MPa, through C-Scan detection components welded rate up to 99.2%.
Embodiment 3：
It is Co to make target material, and backboard material is the target material assembly of Al, specifically includes following steps：
(1) stock up：Prepare Co targets slab and Al powder to be welded, wherein Al Powder Particle Sizes are 75 μm；
(2) treatment of mat：The welding surface of Co target slabs is machined out processing, improves the roughness of welding surface；
(3) it is die-filling：Co targets slab and Al powder are sequentially loaded into mould, make the welding surface phase of Al powder and Co target slabs
Contact；
(4) hot pressed sintering, diffusion welding (DW)：Mould equipped with Co targets slab and Al powder is put into vacuum sintering funace, and
The upper and lower pressure head of upper and lower pressure head alignment mould of hot pressing furnace is subjected to pre-pressing, compaction pressure 5MPa.Fire door is closed to start to take out very
Sky, when vacuum is higher than 1 × 10 in hot pressing furnace-2During Pa, start to warm up, temperature rises to 500 DEG C, and increase pressure to 20MPa, keeps the temperature
When pressurize 3 is small, the thermodiffusion welding of Co targets slab and Al back veneer materials is carried out while Al backboard powder hot-pressing sinter moldings
Connect.It is Co that furnace cooling, which obtains target material, and backboard material is the target material assembly base substrate of Al；
(5) machine：It is Co that target material assembly base substrate, which is carried out shape mechanical process to obtain target material, and backboard material is
The target material assembly of Al.
Target material assembly surface smoothness through the acquisition of above-mentioned technique is high, flexural deformation is small, and Al backboard relative densities reach
98.9%.Component tensile strength reaches 53MPa, through C-Scan detection components welded rate up to 99.3%.
Term used herein is explanation and exemplary and nonrestrictive term.Since the present invention can be with a variety of
Form specific implementation without departing from the spiritual or substantive of invention, it should therefore be appreciated that above-described embodiment be not limited to it is any foregoing
Details, and should widely being explained in the spirit and scope that appended claims are limited, thus fall into claim or its etc.
Whole changes and remodeling in the range of effect all should be appended claims and covered.
Claims (5)
1. a kind of manufacture method of target material assembly, including：
Required to prepare corresponding backboard powder raw material according to backboard material；
Prepare target slab to be welded, target slab includes sputter face and welding surface；
Backboard powder raw material and target slab are sequentially loaded into mould, the welding surface of backboard powder raw material and target slab connects
Touch；
Mould equipped with backboard powder raw material and target slab is put into vacuum sintering funace, it is synchronous to carry out backboard hot pressed sintering
Shaping, and target slab and back veneer material Diffusion Welding, obtain target material assembly base substrate；
Shape mechanical process is carried out to obtained target material assembly base substrate and obtains target material assembly.
2. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that：Backboard powder raw material is Al powder or Cu powder,
Granularity is less than 100 μm.
3. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that：Before target slab loads mould, by target
The welding surface of slab carries out sandblasting or mechanical process in advance, improves the roughness of welding surface.
4. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that：After mould is put into vacuum sintering funace,
Pre-pressing is first carried out before sinter molding, compaction pressure is 0.1~5MPa.
5. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that：500-800 DEG C of hot pressed sintering temperature, pressure
20~30MPa, when heat-insulation pressure keeping 2~3 is small.
Priority Applications (1)
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| CN201711024429.4A CN108000057A (en) | 2017-10-27 | 2017-10-27 | The manufacture method of target material assembly |
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|---|---|---|---|
| CN201711024429.4A CN108000057A (en) | 2017-10-27 | 2017-10-27 | The manufacture method of target material assembly |
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| CN108000057A true CN108000057A (en) | 2018-05-08 |
Family
ID=62051180
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| CN201711024429.4A Pending CN108000057A (en) | 2017-10-27 | 2017-10-27 | The manufacture method of target material assembly |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108941584A (en) * | 2018-09-07 | 2018-12-07 | 韶关市欧莱高新材料有限公司 | A kind of preparation method of long molybdenum tube sputtering target material |
| CN111188016A (en) * | 2019-12-30 | 2020-05-22 | 北京安泰六九新材料科技有限公司 | High-performance CrAlSiX alloy target and preparation method thereof |
| CN112589099A (en) * | 2020-12-15 | 2021-04-02 | 江苏应用元素科技有限公司 | Method for reducing production cost of multi-arc chromium target |
| CN113278932A (en) * | 2020-12-30 | 2021-08-20 | 有研亿金新材料有限公司 | One-step forming preparation method of diffusion welding type AlSc alloy target material |
| CN113981389A (en) * | 2021-10-25 | 2022-01-28 | 北京安泰六九新材料科技有限公司 | Composite target material and manufacturing method thereof |
| CN113996819A (en) * | 2021-09-30 | 2022-02-01 | 宁波江丰电子材料股份有限公司 | Method for machining sputtering arc surface of circular molybdenum target component |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102398035A (en) * | 2011-11-25 | 2012-04-04 | 宁波江丰电子材料有限公司 | Nickel target blank and target method manufacturing methods |
| CN102500909A (en) * | 2011-10-26 | 2012-06-20 | 余姚康富特电子材料有限公司 | Welding method of target and back plate |
| EP2573205A2 (en) * | 2008-07-15 | 2013-03-27 | Praxair Technology, Inc. | Sputter target assembly having a low-temperature high-strength bond |
| KR101414352B1 (en) * | 2013-05-27 | 2014-07-02 | 한국생산기술연구원 | Metal coating for replacing brazing paste and method of joining metal thereby |
| CN104259644A (en) * | 2014-07-24 | 2015-01-07 | 有研亿金新材料有限公司 | Welding method of tungsten-titanium alloy target |
| CN104588896A (en) * | 2013-10-30 | 2015-05-06 | 宁波江丰电子材料股份有限公司 | Welding method of aluminum target component |
| CN204342868U (en) * | 2014-12-02 | 2015-05-20 | 有研亿金新材料有限公司 | A kind of powder metallurgy diffusion welding target |
| CN104708192A (en) * | 2013-12-12 | 2015-06-17 | 有研亿金新材料有限公司 | Diffusion welding method for W-Ti alloy target assembly |
| CN105817627A (en) * | 2016-03-28 | 2016-08-03 | 航天材料及工艺研究所 | Preparation method for integrally-formed tungsten tube target material with large length-to-diameter ratio |
| CN106541249A (en) * | 2015-09-17 | 2017-03-29 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
-
2017
- 2017-10-27 CN CN201711024429.4A patent/CN108000057A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2573205A2 (en) * | 2008-07-15 | 2013-03-27 | Praxair Technology, Inc. | Sputter target assembly having a low-temperature high-strength bond |
| CN102500909A (en) * | 2011-10-26 | 2012-06-20 | 余姚康富特电子材料有限公司 | Welding method of target and back plate |
| CN102398035A (en) * | 2011-11-25 | 2012-04-04 | 宁波江丰电子材料有限公司 | Nickel target blank and target method manufacturing methods |
| KR101414352B1 (en) * | 2013-05-27 | 2014-07-02 | 한국생산기술연구원 | Metal coating for replacing brazing paste and method of joining metal thereby |
| CN104588896A (en) * | 2013-10-30 | 2015-05-06 | 宁波江丰电子材料股份有限公司 | Welding method of aluminum target component |
| CN104708192A (en) * | 2013-12-12 | 2015-06-17 | 有研亿金新材料有限公司 | Diffusion welding method for W-Ti alloy target assembly |
| WO2015085650A1 (en) * | 2013-12-12 | 2015-06-18 | 有研亿金新材料有限公司 | Method for diffusion welding w-ti alloy target material assembly |
| CN104259644A (en) * | 2014-07-24 | 2015-01-07 | 有研亿金新材料有限公司 | Welding method of tungsten-titanium alloy target |
| CN204342868U (en) * | 2014-12-02 | 2015-05-20 | 有研亿金新材料有限公司 | A kind of powder metallurgy diffusion welding target |
| CN106541249A (en) * | 2015-09-17 | 2017-03-29 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN105817627A (en) * | 2016-03-28 | 2016-08-03 | 航天材料及工艺研究所 | Preparation method for integrally-formed tungsten tube target material with large length-to-diameter ratio |
Non-Patent Citations (1)
| Title |
|---|
| （美）劳伦斯 等: "《面向制造与装配的产品设计》", 30 April 1999, 机械工业出版社 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108941584A (en) * | 2018-09-07 | 2018-12-07 | 韶关市欧莱高新材料有限公司 | A kind of preparation method of long molybdenum tube sputtering target material |
| CN111188016A (en) * | 2019-12-30 | 2020-05-22 | 北京安泰六九新材料科技有限公司 | High-performance CrAlSiX alloy target and preparation method thereof |
| CN111188016B (en) * | 2019-12-30 | 2023-07-04 | 苏州六九新材料科技有限公司 | High-performance CrAlSiX alloy target and preparation method thereof |
| CN112589099A (en) * | 2020-12-15 | 2021-04-02 | 江苏应用元素科技有限公司 | Method for reducing production cost of multi-arc chromium target |
| CN113278932A (en) * | 2020-12-30 | 2021-08-20 | 有研亿金新材料有限公司 | One-step forming preparation method of diffusion welding type AlSc alloy target material |
| CN113278932B (en) * | 2020-12-30 | 2022-06-17 | 有研亿金新材料有限公司 | One-step forming preparation method of diffusion welding type AlSc alloy target material |
| CN113996819A (en) * | 2021-09-30 | 2022-02-01 | 宁波江丰电子材料股份有限公司 | Method for machining sputtering arc surface of circular molybdenum target component |
| CN113981389A (en) * | 2021-10-25 | 2022-01-28 | 北京安泰六九新材料科技有限公司 | Composite target material and manufacturing method thereof |
| CN113981389B (en) * | 2021-10-25 | 2023-03-14 | 北京安泰六九新材料科技有限公司 | Composite target material and manufacturing method thereof |
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Application publication date: 20180508 |