CN111375881A - Method for manufacturing target material - Google Patents
Method for manufacturing target material Download PDFInfo
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- CN111375881A CN111375881A CN201811629642.2A CN201811629642A CN111375881A CN 111375881 A CN111375881 A CN 111375881A CN 201811629642 A CN201811629642 A CN 201811629642A CN 111375881 A CN111375881 A CN 111375881A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/021—Isostatic pressure welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/003—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to controlling of welding distortion
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- Physical Vapour Deposition (AREA)
Abstract
The manufacturing method of the target material comprises the following steps: welding the target blank and the back plate to form a target material; and carrying out sectional type cooling on the target. After the target blank and the back plate are welded to form the target, the target is subjected to a segmented cooling process, so that the bulging degree of the target blank and the back plate with larger expansion coefficients in one direction and smaller expansion coefficients in the other direction is reduced in the rapid cooling process, and the deformation of the target after cooling is reduced.
Description
Technical Field
The invention relates to the field of semiconductor preparation, in particular to a manufacturing method of a target material.
Background
And in the hot isostatic pressing welding process, the target blank and the back plate which are welded by hot isostatic pressing are pressurized and heated to the required temperature and pressure, then heat preservation and pressure maintaining are carried out, the target blank and the back plate are fully diffused in the heat preservation and pressure maintaining process, and the temperature and the pressure are reduced after the heat preservation and pressure maintaining process is finished. In the cooling process, the product can shrink, because the material of target blank and backplate is different, and the coefficient of thermal expansion also can be different, leads to target blank and backplate to appear great range shrink in the short time in the cooling process if cooling rate is too fast. The target blank and the backing plate shrink differently, which can result in greater deformation of the product. If the target blank is a brittle material, it may cause cracking of the target during cooling shrinkage; if the target material is a precious metal and the product is deformed to a large extent in the cooling shrinkage process, the product needs to be machined and leveled, and the precious metal material is wasted due to the condition.
Accordingly, it is desirable to provide a cooling solution that reduces distortion or cracking of the target blank and backing plate after cooling.
Disclosure of Invention
The present invention addresses the problem of reducing distortion or cracking of the target blank and backing plate after hot isostatic pressing welding.
In order to solve the above problems, the present invention provides a method for manufacturing a target, comprising: welding the target blank and the back plate to form a target material; and carrying out sectional type cooling on the target.
Optionally, the target is cooled in two stages.
Optionally, when the temperature of the target material is 700-1800 ℃, the temperature reduction rate of the target material is controlled to be 0.5-1 ℃/min; when the temperature of the target material is 100-700 ℃, the cooling rate of the target material is controlled to be 0.8-3 ℃/min.
Optionally, when the temperature of the target material is 400-1800 ℃, the temperature reduction rate of the target material is controlled to be 0.5-1.2 ℃/min; when the temperature of the target material is 100-400 ℃, the cooling rate of the target material is controlled to be 1-3 ℃/min.
Optionally, the target is cooled in three stages.
Optionally, when the temperature of the target material is 700-1800 ℃, the temperature reduction rate of the target material is controlled to be 0.5-1 ℃/min; when the temperature of the target material is 400-700 ℃, the cooling rate of the target material is controlled to be 0.8-1.2 ℃/min; when the temperature of the target material is 100-400 ℃, the cooling rate of the target material is controlled to be 1-3 ℃/min.
Optionally, when the temperature of the target material is 400-1800 ℃, the temperature reduction rate of the target material is controlled to be 0.5-1.2 ℃/min; when the temperature of the target material is 200-400 ℃, the cooling rate of the target material is controlled to be 1-1.5 ℃/min; when the temperature of the target material is 100-200 ℃, the cooling rate of the target material is controlled to be 1.5-3 ℃/min.
Optionally, the target is cooled in four sections: when the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is controlled to be 0.5-1 ℃/min; when the temperature of the target material is 400-700 ℃, the cooling rate of the target material is controlled to be 0.8-1.2 ℃/min; when the temperature of the target material is 200-400 ℃, the cooling rate of the target material is controlled to be 1-1.5 ℃/min; when the temperature of the target material is 100-200 ℃, the cooling rate of the target material is controlled to be 1.5-3 ℃/min.
Optionally, the target blank and the backing plate are welded by a hot isostatic pressing process.
Optionally, the temperature of the target blank and the temperature of the backing plate are controlled to reach a preset temperature, and a gas recycling process is performed.
Optionally, the preset temperature is 100 ℃ to 200 ℃.
Compared with the prior art, the technical scheme of the invention has the following advantages:
when the target blank and the backboard are welded in the cooling process, the target blank and the backboard are different in shrinkage degree when the target blank and the backboard are cooled due to the fact that the target blank and the backboard are different in material, and therefore the product is greatly deformed. Therefore, after the target blank and the back plate are welded to form the target, the target is subjected to a segmented cooling process, and the adopted speed is different for each segment of cooling, so that the deformation of the target after cooling is reduced.
Drawings
FIG. 1 is a schematic diagram of a target material after a heat-preserving and pressure-maintaining process of the prior art;
FIG. 2 is a schematic view of a prior art target after being subjected to temperature and pressure reduction;
FIG. 3 is a schematic view of a target after being cooled in one embodiment of the present invention;
FIG. 4 is a schematic view of a target after being cooled in another embodiment of the present invention.
Detailed Description
At present, after the welding process is finished, the cooling speed of the used cooling and pressure reducing method is extremely high, and under the condition of the rapid cooling, the target material can be greatly deformed and even broken.
The inventors have found that the target material for semiconductor is generally a high-purity metal, and the backing plate material is generally a high-strength and high-hardness alloy metal, and the expansion coefficients of the two materials generally differ greatly. After welding heat preservation and pressure preservation, hot isostatic pressing equipment needs to be cooled down and depressurized, the existing cooling and depressurization method is to carry out pressure recovery firstly after the heat preservation is finished, or the existing cooling and depressurization method is cooled along with a furnace, a large amount of heat can be taken away along with the recovery of gas in the pressure recovery process, and the cooling speed is fast. The existing method comprises the steps of firstly carrying out pressure recovery, taking away a large amount of heat through gas recovery, so that the cooling speed of a product is high, the expansion coefficients of a target blank and a back plate are different, and the product is greatly deformed due to different shrinkage of the target blank and the back plate in the rapid cooling process.
The inventor researches and obtains, when the in-process of target billet and backplate welding at the cooling, because the target billet with the material of backplate is different, target billet and backplate shrink degree are different when the cooling with the backplate, and direct rapid cooling can lead to the great deformation to appear in the product.
Referring to fig. 1 and fig. 2, the expansion coefficients of the general target blank 2 and the backing plate 3 are greatly different, and when the temperature reduction speed is high, the target material 1 will arch toward the material with the smaller expansion coefficient; if the target blank 2 is a brittle material, it may cause cracking during cooling shrinkage; if the target blank 2 is a precious metal, the target material 1 is deformed to a large extent in the cooling shrinkage process; therefore, after the target blank 2 and the back plate 3 are welded to form the target, the target 1 is subjected to a segmented cooling process, and the deformation of the target after cooling is reduced when each segment is cooled.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 3 and 4, schematic diagrams of the target after being cooled according to an embodiment of the present invention are shown.
Welding the target blank 10 and the back plate 20 to form a target material 100; and cooling the target 100 in a sectional manner.
In this embodiment, the target blank 10 and the backing plate 20 are made of different materials, and the target blank 10 and the backing plate 20 have different thermal expansion coefficients. It should be noted that the thermal expansion coefficient refers to the ratio of the change in length of a solid material in a certain direction when the temperature of the solid material changes by 1 ℃ to the length of the solid material at 20 ℃ (i.e., standard laboratory environment).
In this embodiment, the target blank 10 and the backing plate 20 are welded by a hot isostatic pressing process to form the target material 100; specifically, the target blank 10 and the backing plate 20 are placed in a hot isostatic press for hot isostatic pressing welding; the hot isostatic pressing machine is an instrument device which applies isotropic static pressure to powder in the hot isostatic pressing machine or sintered blank to be compacted or dissimilar metal in a high-temperature high-pressure sealed container by using a hot isostatic pressing technology and taking high-pressure inert gas as a medium to form a high-density target material; thereby achieving diffusion bonding of the target blank 10 to the backing plate 20 using the hot isostatic press. When the target blank 10 and the back plate 20 are subjected to hot isostatic pressing welding, firstly pressurizing and heating to required temperature and pressure, and then performing a heat preservation and pressure maintaining process, wherein the heat preservation and pressure maintaining process is to fully diffuse the target blank 10 and the back plate 20 so as to ensure that the target blank 10 and the back plate 20 are fully welded into a qualified target material 100; and after the heat preservation and pressure maintaining process is finished, a temperature reduction and pressure reduction process needs to be carried out on the target material 100, and after the temperature reduction and pressure reduction process is finished, the target material 100 can be taken out from the hot isostatic pressing machine to be subjected to the next processing process.
In this embodiment, the ratio of the thermal expansion coefficients of the target blank 10 and the backing plate 20 is 1 to 1.5.
The target material 100 is cooled in two sections, specifically, the cooling process is realized in two sections, so as to avoid the target material 100 from being deformed greatly or broken due to direct cooling.
In the embodiment, when the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is controlled to be 0.5-1 ℃/min; when the temperature of the target material is 100-700 ℃, the cooling rate of the target material is controlled to be 0.8-3 ℃/min.
Wherein when the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is 1 ℃/min; when the temperature of the target material is 100-700 ℃, the cooling rate of the target material is controlled to be 1.5 ℃/min.
Wherein when the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is 0.8 ℃/min; when the temperature of the target material is 100-700 ℃, the cooling rate of the target material is controlled to be 2 ℃/min.
In other embodiments, when the temperature of the target material is 400-1800 ℃, the temperature reduction rate of the target material is controlled to be 0.5-1.2 ℃/min; when the temperature of the target material is 100-400 ℃, the cooling rate of the target material is controlled to be 1-2 ℃/min.
When the temperature of the target material is 400-1800 ℃, the cooling rate of the target material is controlled to be 1.2 ℃/min, and when the temperature of the target material is 100-400 ℃, the cooling rate of the target material is controlled to be 3 ℃/min.
When the temperature of the target material is 400-1800 ℃, the cooling rate of the target material is controlled to be 0.5 ℃/min, and when the temperature of the target material is 100-400 ℃, the cooling rate of the target material is controlled to be 1.5 ℃/min.
In other embodiments, the target is cooled in three segments, specifically, the cooling process is implemented in three segments, so as to avoid that the target 100 is deformed or broken greatly due to a large cooling interval.
In the embodiment, when the temperature of the target material is 700-1800 ℃, the temperature reduction rate of the target material is controlled to be 0.5-1 ℃/min; when the temperature of the target material is 400-700 ℃, the cooling rate of the target material is controlled to be 0.8-1.2 ℃/min. When the temperature of the target material is 100-400 ℃, the cooling rate of the target material is controlled to be 1-3 ℃/min.
When the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is controlled at 0.5 ℃/min; when the temperature of the target material is 400-700 ℃, the cooling rate of the target material is controlled at 0.8 ℃/min; when the temperature of the target material is 100-400 ℃, the cooling rate of the target material is controlled at 1 ℃/min.
When the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is controlled at 1 ℃/min; when the temperature of the target material is 400-700 ℃, the cooling rate of the target material is controlled at 1.2 ℃/min; when the temperature of the target material is 100-400 ℃, the temperature reduction rate of the target material is controlled at 3 ℃/min.
In other cases, when the temperature of the target material is 400-1800 ℃, the temperature reduction rate of the target material is controlled to be 0.5-1.2 ℃/min; when the temperature of the target material is 200-400 ℃, the cooling rate of the target material is controlled to be 1-1.5 ℃/min. When the temperature of the target material is 100-200 ℃, the cooling rate of the target material is controlled to be 1.5-3 ℃/min.
When the temperature of the target material is 400-1800 ℃, the cooling rate of the target material is controlled at 0.5 ℃/min; when the temperature of the target material is 200-400 ℃, the temperature reduction rate of the target material is controlled at 1 ℃/min. When the temperature of the target material is 100-200 ℃, the temperature reduction rate of the target material is controlled at 1.5 ℃/min.
When the temperature of the target material is 400-1800 ℃, the cooling rate of the target material is controlled at 1.2 ℃/min; when the temperature of the target material is 200-400 ℃, the temperature reduction rate of the target material is controlled at 1.5 ℃/min. When the temperature of the target material is 100-200 ℃, the temperature reduction rate of the target material is controlled at 3 ℃/min.
In other embodiments, the target material is cooled in four sections, specifically, the cooling process is divided into four sections to be implemented, and the cooling interval is reduced, so that the possibility of deformation of the target material 100 in the cooling process is further reduced, and when the target material is cooled in four sections, a suitable cooling rate is more effectively and accurately performed for each section of temperature, thereby shortening the time of the whole cooling process and improving the efficiency of the whole cooling process.
In the embodiment, when the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is controlled to be 0.5-1 ℃/min; when the temperature of the target material is 400-700 ℃, the cooling rate of the target material is controlled to be 0.8-1.2 ℃/min; when the temperature of the target material is 200-400 ℃, the cooling rate of the target material is controlled to be 1-1.5 ℃/min; when the temperature of the target material is 100-200 ℃, the cooling rate of the target material is controlled to be 1.5-3 ℃/min.
When the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is controlled at 0.5 ℃/min; when the temperature of the target material is 400-700 ℃, the temperature reduction rate of the target material is controlled at 0.8 ℃/min; when the temperature of the target material is 200-400 ℃, the temperature reduction rate of the target material is controlled at 1 ℃/min; when the temperature of the target material is 100-200 ℃, the temperature reduction rate of the target material is controlled at 1.5 ℃/min.
When the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is controlled at 0.8 ℃/min; when the temperature of the target material is 400-700 ℃, the temperature reduction rate of the target material is controlled at 1 ℃/min; when the temperature of the target material is 200-400 ℃, the temperature reduction rate of the target material is controlled at 1.2 ℃/min; when the temperature of the target material is 100-200 ℃, the temperature reduction rate of the target material is controlled at 2 ℃/min.
When the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is controlled at 1 ℃/min; when the temperature of the target material is 400-700 ℃, the temperature reduction rate of the target material is controlled at 1.2 ℃/min; when the temperature of the target material is 200-400 ℃, the temperature reduction rate of the target material is controlled at 1.5 ℃/min; when the temperature of the target material is 100-200 ℃, the temperature reduction rate of the target material is controlled at 3 ℃/min.
By the sectional cooling method, the deformation of the target material 100 after cooling is small, and the application is met.
It should be noted that the reason why the above-mentioned segmented temperature reduction method is adopted is that the target blank 10 and the backing plate 20 of the target material 100 are made of different materials, and the target blank 10 and the backing plate 20 have different coefficients of expansion, so that the target blank 10 and the backing plate 20 deform differently under the same temperature change due to the different coefficients of expansion.
Wherein the ratio of the coefficients of expansion of the target blank 10 and the backing plate 20 is different, and the greater the ratio of the coefficients of expansion of the target blank 10 and the backing plate 20, the greater the degree of deformation under the same temperature change.
Therefore, in the process of sectional cooling, the cooling speed in the cooling process is adjusted according to the difference of the specific expansion coefficients of the target blank 10 and the backing plate 20, which is beneficial to reducing the deformation degree of the target material 100 after the cooling process; specifically, when the temperature is changed within the same range, the larger the ratio of the expansion coefficients of the target blank 10 and the backing plate 20 is, the smaller the temperature reduction rate is, the more beneficial the deformation degree of the target material 100 is.
When the temperature is reduced to be higher than 700 ℃, and the expansion coefficient ratio of the target blank 10 to the back plate 20 is 1-1.5, the fastest temperature reduction rate is not more than 1 ℃/min; when the expansion coefficient ratio of the target blank 10 to the back plate 20 is 1.5-3, the fastest cooling rate is not more than 0.8 ℃/min; when the expansion coefficient ratio of the target blank 10 to the back plate 20 exceeds 3, the cooling rate is no more than 0.6 ℃/min at the fastest.
Wherein, when the temperature reduction range is 400-700 ℃, and when the expansion coefficient ratio of the target blank 10 to the back plate 20 is 1-1.5, the preferable temperature reduction rate range is 1-1.2 ℃/min; when the expansion coefficient ratio of the target blank 10 to the back plate 20 is 1.5-3, the preferable temperature reduction rate range is 0.8 ℃/min-1 ℃/min; when the ratio of the expansion coefficients of the target blank 10 and the backing plate 20 exceeds 3, the preferred cooling rate range is 0.6 ℃/min to 0.8 ℃/min.
Wherein, when the temperature reduction range is 200-400 ℃, and when the expansion coefficient ratio of the target blank 10 to the back plate 20 is 1-1.5, the preferable temperature reduction rate range is 1.2-1.5 ℃/min; when the expansion coefficient ratio of the target blank 10 to the back plate 20 is 1.5-3, the preferable temperature reduction rate range is 1 ℃/min-1.2 ℃/min; when the ratio of the expansion coefficients of the target blank 10 and the backing plate 20 exceeds 3, the preferred cooling rate range is 0.8 ℃/min to 1 ℃/min.
Wherein, when the temperature reduction is lower than 200 ℃, and when the expansion coefficient ratio of the target blank 10 to the back plate 20 is 1-1.5, the preferable temperature reduction rate range is 1.5 ℃/min-3 ℃/min; when the expansion coefficient ratio of the target blank 10 to the back plate 20 is 1.5-3, the preferable temperature reduction rate range is 1.2 ℃/min-2.5 ℃/min; when the ratio of the expansion coefficients of the target blank 10 and the backing plate 20 exceeds 3, the preferred cooling rate ranges from 1 ℃/min to 1.5 ℃/min.
In this embodiment, the temperatures of the target blank 10 and the backing plate 20 are controlled to reach a preset temperature, and a gas recovery process is performed; it should be noted that, when the gas recovery process is performed, the pressure can be rapidly balanced with the outside, so as to achieve the pressure reduction effect, and during the pressure reduction process, the temperature can be rapidly reduced, so that, in order to avoid that the deformation of the target material 100 is large due to the rapid reduction of the temperature, the preset temperature is set, and after the temperature is reduced to reach the preset temperature, the gas recovery process is performed again, so as to reduce the deformation caused by the too fast temperature reduction rate.
In the embodiment, the preset temperature is 200-100 ℃; the inventor researches and discovers that when the gas recovery process is carried out when the preset temperature is higher than 200 ℃, the deformation of the target 100 caused by the too fast temperature change is large, and the temperature reduction rate needs to be controlled; when the preset temperature is lower than 100 ℃, the temperature reduction process of the target 100 is close to the end sound, and can bear rapid temperature reduction, if the temperature reduction rate is controlled, the temperature reduction process consumes too long time, and the efficiency of the process is not facilitated.
In this embodiment, when the expansion coefficient ratio of the target blank 10 to the backing plate 20 is 1 to 1.5 and the temperature is reduced to 200 ℃ by the above method, the gas recovery process is performed, and the planar deformation of the target material 100 after temperature reduction and pressure reduction is not greater than 0.3 mm.
In this embodiment, when the expansion coefficient ratio of the target blank 10 to the backing plate 20 is 1.5-3 and the temperature is reduced to 200 ℃ by the above method, the gas recovery process is performed, and the planar deformation of the target material 100 after temperature reduction and pressure reduction is not greater than 0.5 mm.
In this embodiment, when the expansion coefficient ratio of the target blank 10 to the backing plate 20 is greater than 3, the gas recovery process is performed when the temperature is reduced to 200 ℃ by using the above method, and the planar deformation of the target material 100 after the temperature and pressure reduction is tested is less than or equal to 0.7 mm.
In other embodiments, when the temperature is reduced to 100 ℃ by the above method, the recycled gas process is started, and the amount of plane deformation of the target material 100 is reduced.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (11)
1. A method for manufacturing a target material is characterized by comprising the following steps:
welding the target blank and the back plate to form a target material;
and carrying out sectional type cooling on the target.
2. The method of claim 1, wherein the target is cooled in two stages.
3. The manufacturing method according to claim 2, wherein when the target temperature is 700 ℃ to 1800 ℃, the temperature reduction rate of the target is controlled to be 0.5 ℃/min to 1 ℃/min; when the temperature of the target material is 100-700 ℃, the cooling rate of the target material is controlled to be 0.8-3 ℃/min.
4. The manufacturing method according to claim 2, wherein when the target temperature is 400 ℃ to 1800 ℃, the temperature reduction rate of the target is controlled to be 0.5 ℃/min to 1.2 ℃/min; when the temperature of the target material is 100-400 ℃, the cooling rate of the target material is controlled to be 1-3 ℃/min.
5. The method of claim 1, wherein the target is cooled in three stages.
6. The manufacturing method according to claim 5, wherein when the target temperature is 700 ℃ to 1800 ℃, the temperature reduction rate of the target is controlled to be 0.5 ℃/min to 1 ℃/min; when the temperature of the target material is 400-700 ℃, the cooling rate of the target material is controlled to be 0.8-1.2 ℃/min; when the temperature of the target material is 100-400 ℃, the cooling rate of the target material is controlled to be 1-3 ℃/min.
7. The manufacturing method according to claim 5, wherein when the target temperature is 400 ℃ to 1800 ℃, the temperature reduction rate of the target is controlled to be 0.5 ℃/min to 1.2 ℃/min; when the temperature of the target material is 200-400 ℃, the cooling rate of the target material is controlled to be 1-1.5 ℃/min; when the temperature of the target material is 100-200 ℃, the cooling rate of the target material is controlled to be 1.5-3 ℃/min.
8. The method of claim 1, wherein the target is cooled in four stages: when the temperature of the target material is 700-1800 ℃, the cooling rate of the target material is controlled to be 0.5-1 ℃/min; when the temperature of the target material is 400-700 ℃, the cooling rate of the target material is controlled to be 0.8-1.2 ℃/min; when the temperature of the target material is 200-400 ℃, the cooling rate of the target material is controlled to be 1-1.5 ℃/min; when the temperature of the target material is 100-200 ℃, the cooling rate of the target material is controlled to be 1.5-3 ℃/min.
9. The method of claim 1, wherein the target blank and the backing plate are welded by a hot isostatic pressing process.
10. The method of claim 1, wherein the target blank and the backing plate are controlled to have a predetermined temperature and a recycling process is performed.
11. The method of claim 10, wherein the predetermined temperature is in a range of 100 ℃ to 200 ℃.
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| CN201811629642.2A CN111375881A (en) | 2018-12-28 | 2018-12-28 | Method for manufacturing target material |
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| CN201811629642.2A CN111375881A (en) | 2018-12-28 | 2018-12-28 | Method for manufacturing target material |
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| CN111375881A true CN111375881A (en) | 2020-07-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113275730A (en) * | 2021-04-13 | 2021-08-20 | 先导薄膜材料（广东）有限公司 | Binding method of zinc telluride target |
| CN115319219A (en) * | 2022-09-15 | 2022-11-11 | 宁波江丰电子材料股份有限公司 | Vacuum brazing method for tungsten target |
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Cited By (3)
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| CN113275730A (en) * | 2021-04-13 | 2021-08-20 | 先导薄膜材料（广东）有限公司 | Binding method of zinc telluride target |
| CN115319219A (en) * | 2022-09-15 | 2022-11-11 | 宁波江丰电子材料股份有限公司 | Vacuum brazing method for tungsten target |
| CN115319219B (en) * | 2022-09-15 | 2024-03-08 | 宁波江丰电子材料股份有限公司 | Vacuum brazing method for tungsten target |
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